CN103014745B - Plasma pre-cleaning device - Google Patents
Plasma pre-cleaning device Download PDFInfo
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- CN103014745B CN103014745B CN201110299536.4A CN201110299536A CN103014745B CN 103014745 B CN103014745 B CN 103014745B CN 201110299536 A CN201110299536 A CN 201110299536A CN 103014745 B CN103014745 B CN 103014745B
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- faraday shield
- cleaning device
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- medium bucket
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Abstract
The invention provides a plasma pre-cleaning device. The plasma pre-cleaning device comprises coils, a Faraday shielding member, a medium barrel, a top cover and a cavity, wherein the top cover is arranged at the top end of the medium barrel, and the cavity is connected with the bottom end of the medium barrel; the Faraday shielding member is sleeved at the outer side of the medium barrel; the coils are wound at the outer side of the Faraday shielding member; and the Faraday shielding member comprises at least two Faraday shielding units which are not in contact with each other and are arranged along the direction of the periphery of the medium barrel. According to the plasma pre-cleaning device, not only can the occurrence of capacitive coupling between the coils and plasma be reduced, but also the eddy current generation of the Faraday shielding member can be reduced and even avoided, so that the energy coupling efficiency of radio-frequency power acting on the coils can be increased.
Description
Technical field
The invention belongs to plasma processing device field, relate to one and be applied to prewashed plasma device is carried out to workpiece.
Background technology
Plasma pre-cleaning technique is the common technology making micro-dimension unicircuit, it is by inspiring the highdensity plasma body comprising the neutral particles such as ion, electronics, free radical in the chamber, then by the surface of the ion sputtering in plasma body, bombardment workpiece to be machined, thus the metal oxide on workpiece to be machined surface is removed.Meanwhile, the free radical with reductibility in plasma body can with metal oxide generation chemical reaction, also the metal oxide on workpiece to be machined surface can be removed.
Usually, plasma body excites generation by modes such as capacitive coupling, inductive coupled or electron cyclotron resonaces.Wherein, plasma density height 1-2 order of magnitude that the inductive coupled plasma density inspired inspires than capacitive coupling, and also energy coupling efficiency is high.Therefore, in actual applications, conventional inductive coupled mode carrys out activated plasma.
Fig. 1 is the structure diagram of Plasma pre-cleaning device.Refer to Fig. 1, Plasma pre-cleaning device comprises chamber 1 and is arranged on the chamber enclosure 2 be connected above chamber 1 and with chamber 1, and chamber enclosure 2 adopts the insulating material such as quartz or pottery to make.Chamber enclosure 2 is wound with the coil 3 as antenna element, and coil 3 is connected with radio-frequency power supply 4.Radio-frequency power supply 4 provides high frequency power to coil 3, thus inspires highdensity plasma body in chamber 1.Between chamber enclosure 2 and coil 3, be provided with Faraday shield 5, the capacitive coupling ability between the plasma body in coil 3 and chamber 1 can be reduced by Faraday shield 5.
Fig. 2 is the structural representation of Faraday shield.Refer to Fig. 2, Faraday shield 5 is barrel-shaped structure, and it is interval with opening.But this Faraday shield 5 is one-piece construction, processing difficulties, and manufacturing cost is high, and installation and maintenance inconvenience.More importantly, the end of Faraday shield 5 does not disconnect completely, when the magnetic field in chamber 1 changes, circulation (eddy current) is easily produced in Faraday shield 5, the radio frequency power acted on coil 3 is lost because producing heat, thus causes the energy coupling efficiency of the radio frequency power acted on coil 3 to reduce.
Summary of the invention
The technical problem to be solved in the present invention is exactly the above-mentioned defect for existing in Plasma pre-cleaning device, a kind of Plasma pre-cleaning device is provided, it not only can avoid capacitively coupled generation, and can improve the energy coupling efficiency of the radio frequency power acted on coil.
The technical scheme adopted solved the problems of the technologies described above is to provide a kind of Plasma pre-cleaning device, comprise coil, Faraday shield, medium bucket, the top cover being arranged on described medium bucket top and the cavity be connected with described medium bucket bottom, described Faraday shield is enclosed within the outside of described medium bucket, described coil winding is in the outside of described Faraday shield, and described Faraday shield comprises at least two mutually non-touching Faraday shield unit along the arrangement of described medium bucket periphery direction; Described Faraday shield is connected with direct supply.
Wherein, described Faraday shield unit is provided with the groove portion along described Faraday shield axial direction due.
Wherein, the width of described groove portion on the periphery direction of described Faraday shield is 3 ~ 10mm.
Wherein, described Faraday shield unit is 3 ~ 10mm at the thickness of the radial direction of described Faraday shield.
Wherein, on described medium bucket periphery direction, the distance between adjacent two described Faraday shield unit is 3 ~ 10mm.
Wherein, described Faraday shield unit adopts electro-conductive material to make.
Wherein, low-pass filter is connected with between described Faraday shield and direct supply.
Wherein, be provided with adapter flange between described medium bucket top and described top cover, be provided with the cooling channel for cooling described medium bucket in described adapter flange inside, described cooling channel is communicated with heat-eliminating medium source.
Wherein, described medium bucket adopts pottery or quartz to make.
The present invention has following beneficial effect:
Plasma pre-cleaning device provided by the invention, the Faraday shield be arranged on outside medium bucket comprises at least two Faraday shield unit mutually do not contacted along the arrangement of described medium bucket periphery direction, this Faraday shield can not only electric field shielding, thus the capacitively coupled generation reduced between coil and plasma body, reduce plasma body to the bombardment of medium bucket, thus the life-span extending medium bucket and the pollution reduced in reaction chamber; And can reduce, even avoid Faraday shield produces eddy current, thus the loss of the radio frequency power acted on coil can be reduced, and then the energy coupling efficiency of the radio frequency power acted on coil can be improved.In addition, the Faraday shield that the Faraday shield unit mutually do not contacted by least two forms along described medium bucket periphery direction is easily processed, and cost of manufacture is low, and convenient for installation and maintenance.
Accompanying drawing explanation
Fig. 1 is the structure diagram of Plasma pre-cleaning device;
Fig. 2 is the structural representation of Faraday shield;
Fig. 3 is the structure diagram of Plasma pre-cleaning device provided by the invention;
Fig. 4 is the vertical view of Faraday shield provided by the invention;
Fig. 5 is the stereographic map of Faraday shield provided by the invention.
Embodiment
For making those skilled in the art understand technical scheme of the present invention better, below in conjunction with accompanying drawing, Plasma pre-cleaning device provided by the invention is described in detail.
Fig. 3 is the structure diagram of Plasma pre-cleaning device provided by the invention.Refer to Fig. 3, Plasma pre-cleaning device comprises reaction chamber, and reaction chamber comprises cavity 11, medium bucket 12 and top cover 13.Wherein, medium bucket 12 is arranged on the top of cavity 11, and the profile of its projection is in the horizontal plane identical with the profile of cavity 11 projection in the horizontal plane, and top cover 13 is arranged on the top of medium bucket 12.Be provided with chuck 14 in the bottom of cavity 11, chuck 14 is connected with the first radio-frequency power supply 15 by the first matching box (not shown).Can make chuck 14 forms rf bias by the first radio-frequency power supply 15, thus attraction plasma bombardment is placed on the workpiece to be machined on chuck 14, and then reaches the object of cleaning workpiece to be machined.
Medium bucket 12 adopts pottery or quartz material to make.Be provided with Faraday shield 16 in the outside of medium bucket 12, Faraday shield 16 adopts electro-conductive material, as copper or aluminium are made.Be wound with coil 17 in the outer felt of Faraday shield 16, coil 17 is connected with the second radio-frequency power supply 18 by the second matching box (not shown).Second radio-frequency power supply 18 provides radio frequency power to coil 17, thus the gas in reaction chamber is excited into highdensity plasma body.
In the present embodiment, Faraday shield 16 is arranged on the outside of medium bucket 12, it not only can reduce between the plasma body in coil 17 and reaction chamber capacitive coupling occurs, thus the bombardment of plasma body to medium bucket 12 can be reduced, thus extend the work-ing life of medium bucket 12, can reduce because medium bucket 12 is corroded and cause reaction chamber internal contamination simultaneously, and then improving the processing quality of Plasma pre-cleaning device.
Fig. 4 is the vertical view of Faraday shield provided by the invention.Fig. 5 is the stereographic map of Faraday shield provided by the invention.See also Fig. 3, Fig. 4 and Fig. 5, Faraday shield comprises two Faraday shield unit 16a, 16b, two Faraday shield unit 16a, 16b do not contact, that is, Faraday shield 16 is by two discontiguous Faraday shield unit 16a, 16b arranging along described medium bucket periphery direction.The distance of Faraday shield unit 16a and Faraday shield unit 16b on medium bucket (or Faraday shield unit) periphery direction is 3 ~ 10mm.The Faraday shield of this structure not only can make coil 17 can with inductive coupled mode activated plasma, the generation of Faraday shield circulation or eddy current can be reduced, even avoid simultaneously, thus the plasma density in raising reaction chamber, and then improve the energy coupling efficiency of the radio frequency power acted on coil 17.
When the material that the medium layer on workpiece to be machined surface adopts specific inductivity low, in order to avoid pre-cleaning processes is to the damage on workpiece to be machined surface, usually need the radio frequency power that reduction by first radio-frequency power supply 15 provides, this obviously can reduce prewashed efficiency.The Faraday shield adopting the present embodiment to provide can improve prewashed efficiency, thus guarantees that surface adopts the process velocity of the workpiece to be machined of low-k.
In the present embodiment, the thickness of Faraday shield unit 16a, 16b is 3 ~ 10mm.And be also provided with the groove portion 19 arranged along its axial direction due on Faraday shield unit 16a, 16b, the length in groove portion 19 is slightly less than Faraday shield unit 16a, 16b length in the axial direction, and width is 3 ~ 10mm.Groove portion 19 can reduce Faraday shield unit 16a, 16b upper generation eddy current or circulation, thus can the loss of the radio frequency power of reducing effect on coil 17, and then improves the energy coupling efficiency of the radio frequency power acted on coil.
It should be noted that, the Faraday shield 16 that the present embodiment provides have employed two Faraday shield unit 16a, 16b, but the present invention is not limited thereto.Faraday shield 16 also can adopt two or more Faraday shield unit to form, as long as make Faraday shield unit not contact, the generation of circulation or eddy current on Faraday shield can be reduced, thus the plasma density in raising reaction chamber, and then improve the energy coupling efficiency of coil 17.In addition, low by Faraday shield 16 tooling cost of multiple Faraday shield unit composition, and be convenient to install and safeguard, thus the labour intensity of installation and maintenance Plasma pre-cleaning device can be reduced.
As a preferred embodiment of the present embodiment, Faraday shield 16 is connected with direct supply 21, and Faraday shield 16 is connected with the positive pole of direct supply 21, the minus earth of direct supply 21.In pre-cleaning process, the bias voltage of Faraday shield 16 is changed with direct supply 21, thus the density distribution in reaction chamber can be regulated, make to be uniformly distributed in chamber 11 plasma density in the radial direction, thus reduce the cleaning performance difference of workpiece to be machined center and peripheral position, improve the homogeneity of whole workpiece cleaning.Such as, when in reaction chamber, the plasma density in mid-way is higher, and the plasma density of fringe region lower time, the bias voltage of Faraday shield 16 can be reduced, to increase the potential difference between Faraday shield 16 and plasma body, thus plasma body is moved to the marginal position of reaction chamber, improve the plasma density of reaction chamber fringe region, and then make the plasma density in reaction chamber be tending towards even.
In the present embodiment, low-pass filter 22 is provided with between Faraday shield 16 and direct supply 21, low-pass filter 22 can improve the regulation range of the direct current (DC) bias acted on Faraday shield 16, thus make plasma density in reaction chamber evenly.
As another preferred embodiment of the present embodiment, between medium bucket 12 and top cover 13, be also provided with adapter flange 23, Faraday shield 16 is fixed on adapter flange 23.In adapter flange 23, be provided with the cooling channel 24 for cooling medium flowing, cooling channel 24 is communicated with the heat-eliminating medium source (not shown) be arranged on outside reaction chamber.Can cool Faraday shield 16 by heat-eliminating medium, this can guarantee that Plasma pre-cleaning device can normally run for a long time.
The Plasma pre-cleaning device that the present embodiment provides, by at least two the Faraday shield unit mutually do not contacted comprised along the arrangement of described medium bucket periphery direction be arranged on outside medium bucket, can not only electric field shielding, thus reduce capacitive coupling between coil and plasma body, reduce plasma body to the bombardment of medium bucket, thus the life-span extending medium bucket and the pollution reduced in reaction chamber; And can reduce on Faraday shield and produce circulation, thus the loss of the radio frequency power acted on coil can be reduced, and then the energy coupling efficiency of the radio frequency power acted on coil can be improved.In addition, the Faraday shield that the Faraday shield unit mutually do not contacted by least two forms along described medium bucket periphery direction is easily processed, and cost of manufacture is low, and convenient for installation and maintenance.
Be understandable that, the illustrative embodiments that above embodiment is only used to principle of the present invention is described and adopts, but the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (9)
1. a Plasma pre-cleaning device, comprise coil, Faraday shield, medium bucket, the top cover being arranged on described medium bucket top and the cavity be connected with described medium bucket bottom, described Faraday shield is enclosed within the outside of described medium bucket, described coil winding is in the outside of described Faraday shield, it is characterized in that, described Faraday shield comprises at least two mutually non-touching Faraday shield unit along the arrangement of described medium bucket periphery direction; Described Faraday shield is connected with direct supply.
2. Plasma pre-cleaning device according to claim 1, is characterized in that, described Faraday shield unit is provided with the groove portion along described Faraday shield axial direction due.
3. Plasma pre-cleaning device according to claim 2, is characterized in that, the width of described groove portion on the periphery direction of described Faraday shield is 3 ~ 10mm.
4. Plasma pre-cleaning device according to claim 1, is characterized in that, described Faraday shield unit is 3 ~ 10mm at the thickness of the radial direction of described Faraday shield.
5. Plasma pre-cleaning device according to claim 1, is characterized in that, on described medium bucket periphery direction, the distance between adjacent two described Faraday shield unit is 3 ~ 10mm.
6. Plasma pre-cleaning device according to claim 1, is characterized in that, described Faraday shield unit adopts electro-conductive material to make.
7. Plasma pre-cleaning device according to claim 1, is characterized in that, is connected with low-pass filter between described Faraday shield and direct supply.
8. Plasma pre-cleaning device according to claim 1, it is characterized in that, be provided with adapter flange between described medium bucket top and described top cover, be provided with the cooling channel for cooling described medium bucket in described adapter flange inside, described cooling channel is communicated with heat-eliminating medium source.
9. the Plasma pre-cleaning device according to claim 1-8 any one, is characterized in that, described medium bucket adopts pottery or quartz to make.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110299536.4A CN103014745B (en) | 2011-09-28 | 2011-09-28 | Plasma pre-cleaning device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110299536.4A CN103014745B (en) | 2011-09-28 | 2011-09-28 | Plasma pre-cleaning device |
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| Publication Number | Publication Date |
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| CN103014745A CN103014745A (en) | 2013-04-03 |
| CN103014745B true CN103014745B (en) | 2015-07-08 |
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| CN201110299536.4A Active CN103014745B (en) | 2011-09-28 | 2011-09-28 | Plasma pre-cleaning device |
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Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105695936B (en) | 2014-11-26 | 2018-11-06 | 北京北方华创微电子装备有限公司 | Pre-cleaning cavity and plasma processing device |
| CN105798020B (en) * | 2014-12-30 | 2019-09-27 | 东莞市伟盟达静电设备有限公司 | A kind of contactless auto-cleaner of LCD |
| GB201502453D0 (en) * | 2015-02-13 | 2015-04-01 | Spts Technologies Ltd | Plasma producing apparatus |
| CN106611692A (en) * | 2015-10-26 | 2017-05-03 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Upper electrode assembly and reaction chamber |
| CN106653549B (en) * | 2015-11-03 | 2020-02-11 | 中微半导体设备(上海)股份有限公司 | Semiconductor processing equipment |
| CN107256822B (en) * | 2017-07-27 | 2019-08-23 | 北京北方华创微电子装备有限公司 | Top electrode assembly and reaction chamber |
| CN109473331B (en) * | 2017-09-08 | 2022-11-25 | 北京北方华创微电子装备有限公司 | Chamber shielding device and semiconductor processing chamber |
| CN111069192A (en) * | 2018-10-22 | 2020-04-28 | 北京北方华创微电子装备有限公司 | In-situ cleaning device and semiconductor processing equipment |
| CN113059405A (en) * | 2019-12-30 | 2021-07-02 | 盛美半导体设备(上海)股份有限公司 | Processing method and cleaning device for semiconductor structure |
| CN111081524B (en) * | 2019-12-31 | 2022-02-22 | 江苏鲁汶仪器有限公司 | Rotatable Faraday cleaning device and plasma processing system |
| CN114446761A (en) * | 2022-01-26 | 2022-05-06 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment |
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| CN1265222A (en) * | 1997-04-21 | 2000-08-30 | 东京电子亚利桑那公司 | Method and appts. for ionized sputtering of materials |
| CN1554114A (en) * | 2001-02-08 | 2004-12-08 | 东京毅力科创株式会社 | Plasma treatment device and plasma treatment method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7776156B2 (en) * | 2005-02-10 | 2010-08-17 | Applied Materials, Inc. | Side RF coil and side heater for plasma processing apparatus |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1265222A (en) * | 1997-04-21 | 2000-08-30 | 东京电子亚利桑那公司 | Method and appts. for ionized sputtering of materials |
| CN1554114A (en) * | 2001-02-08 | 2004-12-08 | 东京毅力科创株式会社 | Plasma treatment device and plasma treatment method |
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Address after: 100176 No. 8 Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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