CN102945830B - Method for controlling uniformity of substrate oxide layer in manufacture procedure of shallow-channel insulation layer - Google Patents
Method for controlling uniformity of substrate oxide layer in manufacture procedure of shallow-channel insulation layer Download PDFInfo
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- CN102945830B CN102945830B CN201210432476.3A CN201210432476A CN102945830B CN 102945830 B CN102945830 B CN 102945830B CN 201210432476 A CN201210432476 A CN 201210432476A CN 102945830 B CN102945830 B CN 102945830B
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Abstract
The invention discloses a method for controlling uniformity of a substrate oxide layer in a manufacture procedure of a shallow-channel insulation layer, which belongs to the technical field of technology of CMOS (complementary metal oxide semiconductor) semiconductor devices. The steps of the method are as follows: growing one more layer of thin film layer while growing a substrate silicon oxide layer, removing a substrate silicon nitride layer, measuring the thickness of the substrate silicon oxide layer after removing the substrate silicon nitride layer, taking the thickness as a front value, simultaneously setting a target value which is the thickness value of the substrate silicon oxide layer under an ideal condition, setting a modification value for the substrate silicon oxide layer in each batch, wherein the value range of the modification value is the difference range of the front value and the target value, and modifying and etching the substrate silicon oxide layer according to the modification value. The method adopting the technical scheme has the benefits that the problem of non-uniform thickness of the substrate oxide layers is improved, the manufacture cost of the semiconductor technology is saved, and the production-manufacturing time of a product is shortened.
Description
Technical field
The present invention relates to CMOS(Complementary Metal Oxide Semiconductor, complementary metal oxide semiconductors (CMOS)) semiconductor device technology technical field, relate in particular to a kind of inhomogeneity method of controlling substrate oxide layer in shallow trench isolations layer processing procedure.
Background technology
In cmos semiconductor device technology, along with constantly diminishing of device size, also more and more higher to the requirement of technique.It is more and more important that the stability of wet etching also becomes.
In CMOS technique, shallow trench isolations layer (shallow trench isolation, STI) technique is still widely used at present.As Fig. 1 .1-1.5 is depicted as the structure chart of typical STI technique.First, Fig. 1 .1 shows the growth of substrate silica and underlayer nitriding silicon, then form the STI figure as shown in Fig. 1 .2 through photoetching and dry etching, through chemical vapour deposition (CVD) (Chemical Vapor Deposition, CVD) raceway groove of the insulation of formation as shown in Fig. 1 .3, then be chemical-mechanical planarization (the Chemical Mechanical Planarization carrying out as shown in Fig. 1 .4, CMP), and wet etching as shown in Fig. 1 .5 removes the silicon nitride as mask, be then that Implantation forms N trap and P trap.
Remove in nitride process at wet etching, phosphoric acid is a kind of chemical liquid of commonly using, it and silicon nitride reaction formula as shown in Figure 2, can find out from formula, phosphoric acid is removed in silicon nitride reaction process, can produce accessory products silica, as shown in Figure 3, along with the increase phosphoric acid of silica content in solution reduces the etching rate of silica, thereby cause the in uneven thickness of substrate oxide layer between different batches, follow-up ion implantation technology has been proposed to challenge.For addressing the above problem, current common way is that substrate oxide layer is removed, and then the oxide layer that regrows, and this layer of new governor's oxide layer is called as sacrificial oxide layer conventionally, then carries out ion implantation technology.This way has solved the problem in uneven thickness of the front oxide-film of Implantation, but due to the oxide layer that will regrow, so must be through diffusion technology, the cycle is long, and cost is high.
Summary of the invention
According to the defect existing in prior art, a kind of technical scheme of controlling the inhomogeneity method of substrate oxide layer in shallow trench isolations layer processing procedure is now provided, specific as follows:
A kind of inhomogeneity method of controlling substrate oxide layer in shallow trench isolations layer processing procedure, the processing procedure of described shallow trench isolations layer comprises formation substrate silicon oxide layer, underlayer nitriding silicon layer and silicon substrate, described underlayer nitriding silicon layer is positioned at above described substrate silicon oxide layer, and described substrate silicon oxide layer is positioned at above described silicon substrate; Wherein, step comprises:
Step a, many growth thin film layers in the described substrate silicon oxide layer of growth;
Step b, removes described underlayer nitriding silicon layer;
Step c, after described underlayer nitriding silicon layer is removed, the thickness of the described substrate silicon oxide layer of measurement, is called front value; Determine a desired value, described desired value is the Thickness of described substrate silicon oxide layer under ideal state simultaneously;
Steps d, to the fixed correction value of the described substrate silicon oxide layer of each batch, the span of described correction value is the difference range of described front value and described desired value; Then according to described correction value, described substrate silicon oxide layer is revised to etching.
Preferably, the inhomogeneity method of substrate oxide layer in this control shallow trench isolations layer processing procedure, wherein, in described step b, adopts the mode of phosphoric acid dip to remove to described underlayer nitriding silicon layer.
Preferably, the inhomogeneity method of substrate oxide layer in this control shallow trench isolations layer processing procedure, wherein, in described step b, adopts the mode of excessive etching to remove to described underlayer nitriding silicon layer.
Preferably, the inhomogeneity method of substrate oxide layer in this control shallow trench isolations layer processing procedure, wherein, in described steps d, described substrate silicon oxide layer is being revised after etching, measure the thickness of described substrate silicon oxide layer and obtain a value afterwards, described rear value is used for verifying the etched effect of described correction.
The beneficial effect of technique scheme is: well improved the inhomogeneous problem of substrate oxidated layer thickness by this control method, saved the cost of manufacture of semiconductor technology, shortened the manufacturing time of product; The present invention is not only applicable to control and sinks to the bottom the uniformity of oxide thickness, coordinate with different platform also can to all films batch and batch between thickness evenness helpful.
Brief description of the drawings
Fig. 1 .1-1.5 is the structure chart of STI technique in prior art;
Fig. 2 shows the reaction formula of phosphoric acid etch silicon nitride;
Fig. 3 is the etching selection ratio schematic of phosphoric acid to silicon nitride and silica;
Fig. 4 is the general illustration of in embodiments of the invention, substrate oxide-film being revised;
Fig. 5 is the embodiment chart of in embodiments of the invention, substrate oxide-film being revised.
Embodiment
Below in conjunction with the drawings and specific embodiments, the invention will be further described, but not as limiting to the invention.
A kind of inhomogeneity method of controlling substrate oxide layer in shallow trench isolations layer processing procedure, the method acts in shallow trench isolations layer (STI) processing procedure, the basic structure of STI is divided into three layers, is followed successively by from top to bottom underlayer nitriding silicon layer, substrate silicon oxide layer and silicon substrate; As shown in Figure 4, in one embodiment of the present of invention, the concrete steps of controlling the inhomogeneity method of substrate oxide layer in shallow trench isolations layer processing procedure comprise:
Step a, in growth substrates silicon oxide layer, many growth one decks have certain thickness film; In the present embodiment the thickness of this layer film being fixed tentatively is 15 dusts (1 dust=0.1 nanometers);
Step b, utilizes the mode of phosphoric acid dip, adopts excessive etching that underlayer nitriding silicon layer is removed;
In the time removing underlayer nitriding silicon layer, because removal needs completeness, so conventionally adopt the method for excessive etching, but this method easily causes substrate silicon oxide layer to be directly exposed in phosphoric acid liquid, due to the characteristic of phosphoric acid as shown in Figure 2, along with increasing of reaction silicon chip, the content of accessory products silica raises, phosphoric acid will reduce the etching rate of substrate silicon oxide layer, as shown in Figure 3, this can cause between different batches product substrate silicon oxide layer in uneven thickness conventionally, thereby affect follow-up ion implantation technology, but due to the thin film layer of growing on substrate silicon oxide layer in embodiments of the invention, so after underlayer nitriding silicon layer phosphoric acid is removed, the Thickness Ratio actual requirement of substrate silicon oxide layer is partially thick, leave certain leeway to so follow-up adjustment.
Step c, after underlayer nitriding silicon layer is removed, measure substrate silicon oxide layer thickness and this one-tenth-value thickness 1/10 is called before value; The actual (real) thickness of this substrate silicon oxide layer after this front value representation removal underlayer nitriding silicon layer;
Determine a desirable desired value, this desired value is that user wishes the optimal one-tenth-value thickness 1/10 that substrate silicon oxide layer can reach simultaneously, to realize the uniformity between the substrate silicon oxide layer of different batches.
Steps d, calculate the difference range between above-mentioned front value and desired value, and within this difference range, carry out value, the value of getting is correction value, this correction value is revised etching for user to substrate silicon oxide layer, so that the thickness between the substrate silicon oxide layer of different batches as far as possible evenly.
Complete after correction etching, again substrate silicon oxide layer is measured, institute's value is rear value, this rear value is as the validation value to substrate silicon oxide layer correction etching, for verifying whether the thickness between the substrate silicon oxide layer through revising different batches after etching has reached requirement, and determine whether to proceed to revise etching according to the result.
Be illustrated in figure 4 the value condition of multiple embodiment of the present invention to correction value, this value condition is not done certain restriction to the span of correction value in the present invention:
In the embodiment of technique formula 1, because the difference of front value and desired value is-15-0, therefore correction value 1 is carried out value between-15-0, and is finally defined as 0; Therefore without this substrate silicon oxide layer is revised to etching.
In the embodiment of technique formula 2, because the difference range of front value and desired value is 0-4, therefore correction value 2 is carried out value between 0-4, and is finally defined as median 2; Therefore this substrate silicon oxide layer is revised to etching, etch thicknesses is 2 dusts.
In the embodiment of technique formula 3, because the difference range of front value and desired value is 4-8, therefore correction value 3 is carried out value between 4-8, and is finally defined as median 6; Therefore this substrate silicon oxide layer is revised to etching, etch thicknesses is 6 dusts.
In the embodiment of technique formula 4, because the difference range of front value and desired value is 8-12, therefore correction value 4 is carried out value between 8-12, and is finally defined as median 10; Therefore this substrate silicon oxide layer is revised to etching, etch thicknesses is 10 dusts.
The foregoing is only preferred embodiment of the present invention; not thereby limit embodiments of the present invention and protection range; to those skilled in the art; the scheme that being equal to of should recognizing that all utilizations specification of the present invention and diagramatic content done replaces and apparent variation obtains, all should be included in protection scope of the present invention.
Claims (3)
1. control the inhomogeneity method of substrate oxide layer in shallow trench isolations layer processing procedure for one kind, the processing procedure of described shallow trench isolations layer comprises formation substrate silicon oxide layer, underlayer nitriding silicon layer and silicon substrate, described underlayer nitriding silicon layer is positioned at above described substrate silicon oxide layer, and described substrate silicon oxide layer is positioned at above described silicon substrate; It is characterized in that, step comprises:
Step a, many growth one deck silicon oxide layers in the described substrate silicon oxide layer of growth;
Step b, removes described underlayer nitriding silicon layer;
Step c, after described underlayer nitriding silicon layer is removed, the thickness of the described substrate silicon oxide layer of measurement, is called front value; Determine a desired value, described desired value is the Thickness of described substrate silicon oxide layer under ideal state simultaneously;
Steps d, to the fixed correction value of the described substrate silicon oxide layer of each batch, the span of described correction value is the difference range of described front value and described desired value; Then according to described correction value, described substrate silicon oxide layer is revised to etching;
Wherein, in described step b, adopt the mode of phosphoric acid dip to remove to described underlayer nitriding silicon layer.
2. the inhomogeneity method of substrate oxide layer in control shallow trench isolations layer processing procedure as claimed in claim 1, is characterized in that, in described step b, adopts the mode of excessive etching to remove to described underlayer nitriding silicon layer.
3. the inhomogeneity method of substrate oxide layer in control shallow trench isolations layer processing procedure as claimed in claim 1, it is characterized in that, in described steps d, described substrate silicon oxide layer is being revised after etching, measure the thickness of described substrate silicon oxide layer and obtain a value afterwards, described rear value is used for verifying the etched effect of described correction.
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| CN101673701A (en) * | 2008-09-09 | 2010-03-17 | 中芯国际集成电路制造(北京)有限公司 | Method for forming shallow trench isolation structure and shallow trench isolation structure |
| CN102097355A (en) * | 2009-12-10 | 2011-06-15 | 中芯国际集成电路制造(上海)有限公司 | Method for making shallow trench isolation region |
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| JP2001332614A (en) * | 2000-03-17 | 2001-11-30 | Mitsubishi Electric Corp | Manufacturing method of element isolating trench structure |
| US6846720B2 (en) * | 2003-06-18 | 2005-01-25 | Agency For Science, Technology And Research | Method to reduce junction leakage current in strained silicon on silicon-germanium devices |
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| CN101673701A (en) * | 2008-09-09 | 2010-03-17 | 中芯国际集成电路制造(北京)有限公司 | Method for forming shallow trench isolation structure and shallow trench isolation structure |
| CN102097355A (en) * | 2009-12-10 | 2011-06-15 | 中芯国际集成电路制造(上海)有限公司 | Method for making shallow trench isolation region |
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