CN102923642B - A kind of smooth-sided method of high-aspect-ratio silicon structure - Google Patents
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Abstract
The invention provides a kind of smooth-sided method of high-aspect-ratio silicon structure, first form silicon oxide masking film in surface of silicon, then in silicon substrate, high-aspect-ratio silicon structure is made according to silicon oxide masking film, then adopt inductively coupled plasma enhancing chemical vapour deposition technique or spraying process to form fluoropolymer in described silicon of high aspect ratio structure side wall, finally remove silicon oxide masking film and complete preparation.The present invention has following beneficial effect: 1) present invention process is simple, and controllability is strong, and completely compatible with existing semiconductor technology; 2) the present invention can realize the perfect film coated of original structure, the smoothness of Quick High lateral wall, and does not affect high-aspect-ratio silicon structure; 3) be specially adapted to senser element, the application scenario of mould or microfluidic channels, when high-aspect-ratio silicon structure is used as mould, the deposition of hydrophobic polymer film is more conducive to the demoulding.
Description
Technical field
The invention belongs to technical field of manufacturing semiconductors, particularly relate to a kind of smooth-sided method of high-aspect-ratio silicon structure.
Background technology
In the art of semiconductor manufacturing, etching deep trench or deep hole are a kind of important manufacturing process on a silicon substrate.More and more many devices are just towards the structural development of high-aspect-ratio, and current high aspect ratio structure has become and realizes the isostructural essential condition of senser element, mould and microfluidic channels.
In the manufacture process of high-aspect-ratio silicon structure, conventional silicon etching method mainly contains wet etching, metal shadowing etching, Cryo-etching and Bosch technique alternately etching.Wherein wet etching utilizes the chemical solutions such as KOH to corrode silicon, and reaction product is entered solution and discharged by steps such as cleanings, and its selection and comparison is high, but anisotropy is poor, and easy residual impurity ion; The selection and comparison of metal shadowing etching is large, but can form micropin effect; Cryo-etching adopts the method for low-temperature passivation to improve anisotropy, needs complicated low-temperature control system; Bosch technique alternately etching adopts the etching and side wall passivation that hocket to realize anisotropy, and the method is most widely used general, but the method for this alternately etching inevitably will produce ripple at sidewall, reduces the smoothness of sidewall.Therefore, in order to improve the sidewall surfaces quality of high aspect ratio structure, need to develop a kind of new method improving sidewall smoothness.
At present; in order to improve the sidewall smoothness of high-aspect-ratio silicon structure; publication number is that the patent document of CN 102431960A discloses a kind of silicon etching method for forming through hole; the lithographic method that this patent adopts etching gas and sidewall protective gas to supply simultaneously prepares silicon through hole, but the method has a great impact etch rate.The smooth-sided method also had is etching into certain phase, utilize a large amount of oxygen the oxide layer of polymer to be divided to take off, and the crystalline silicon oxidation come out in groove etching formed forms silica, but the method process time is long, silica formation condition and thickness wayward, and whole process is very slow.Therefore, industry is simple in the urgent need to one, improves the method for silicon of high aspect ratio structure side wall smoothness fast.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide a kind of smooth-sided method of high-aspect-ratio silicon structure, for solving the problem that in prior art, silicon of high aspect ratio structure fabrication process time is long, silicon of high aspect ratio structure side wall smoothness is low.
For achieving the above object and other relevant objects, the invention provides a kind of smooth-sided method of high-aspect-ratio silicon structure, comprise step: in silicon substrate, form high-aspect-ratio silicon structure, and form fluoropolymer in the sidewall of described high-aspect-ratio silicon structure.
As a kind of preferred version of the smooth-sided method of high-aspect-ratio silicon structure of the present invention, described fluoropolymer is polytetrafluoroethylene (PTFE).
As a kind of preferred version of the smooth-sided method of high-aspect-ratio silicon structure of the present invention, described smooth-sided method comprises the following steps:
1) silicon substrate is provided, adopts thermal oxidation method to form silicon oxide layer in described surface of silicon, and adopt photoetching process to be prepared in silicon oxide masking film that the position that need make high-aspect-ratio silicon structure has etching window;
2) adopt inductively coupled plasma etching method to hocket etching and passivation to described silicon substrate from described etching window, form high-aspect-ratio silicon structure;
3) with CF
4, C
4f
8, C
4f
6, C
5f
8one or its be mixed into reaction source gas arbitrarily, adopt inductively coupled plasma to strengthen chemical vapour deposition technique in described silicon of high aspect ratio structure side wall deposition fluoropolymer;
4) described silicon oxide masking film is removed.
Preferably, step 2) in, adopt SF
6and O
2mist etches described silicon substrate as etching gas, adopts C
4f
8as passivation gas, passivation is carried out to described silicon substrate.
Further, when affiliated silicon substrate is etched, described SF
6flow be 100 ~ 160sccm, described O
2flow be 10 ~ 16sccm, radio-frequency power is 500 ~ 700W, and air pressure is 90 ~ 100mtorr; When passivation is carried out to affiliated silicon substrate, described C
4f
8flow be 60 ~ 100sccm, radio-frequency power is 500 ~ 700W, and air pressure is 90 ~ 100mtorr.
As a kind of preferred version of the smooth-sided method of high-aspect-ratio silicon structure of the present invention, the flow of described reaction source gas is 100 ~ 300sccm, and radio-frequency power is 500 ~ 800W, and air pressure is 30 ~ 100mtorr.
As a kind of preferred version of the smooth-sided method of high-aspect-ratio silicon structure of the present invention, described smooth-sided method comprises the following steps:
1) silicon substrate is provided, adopts thermal oxidation method to form silicon oxide layer in described surface of silicon, and adopt photoetching process to be prepared in silicon oxide masking film that the position that need make high-aspect-ratio silicon structure has etching window;
2) adopt inductively coupled plasma etching method to hocket etching and passivation to described silicon substrate from described etching window, form high-aspect-ratio silicon structure;
3) adopted by the butyl acetate solution of polytetrafluoroethylene (PTFE) spraying process to be deposited on described silicon of high aspect ratio structure side wall surface, and carry out heating described butyl acetate solvent is all volatilized;
4) described silicon oxide masking film is removed.
Preferably, step 3) heats described butyl acetate solvent is all volatilized in vacuum, and heating-up temperature is 60 ~ 80 DEG C.
As a kind of preferred version of the smooth-sided method of high-aspect-ratio silicon structure of the present invention, described smooth-sided method comprises the following steps:
1) silicon substrate is provided, adopts thermal oxidation method to form silicon oxide layer in described surface of silicon, and adopt photoetching process to be prepared in silicon oxide masking film that the position that need make high-aspect-ratio silicon structure has etching window;
2) said structure is placed in KOH solution enter corrosion form high-aspect-ratio silicon structure with the silicon substrate below described etching window;
3) with CF
4, C
4f
8, C
4f
6, C
5f
8one or its be mixed into reaction source gas arbitrarily, adopt inductively coupled plasma to strengthen chemical vapour deposition technique in described silicon of high aspect ratio structure side wall deposition fluoropolymer;
4) described silicon oxide masking film is removed.
Preferably, step 2) in, corrosion temperature is 40 ~ 60 DEG C, and etching time is 5 ~ 12h.
As mentioned above, the invention provides a kind of smooth-sided method of high-aspect-ratio silicon structure, first form silicon oxide masking film in surface of silicon, then in silicon substrate, high-aspect-ratio silicon structure is made according to silicon oxide masking film, then adopt inductively coupled plasma enhancing chemical vapour deposition technique or spraying process to form fluoropolymer in described silicon of high aspect ratio structure side wall, finally remove silicon oxide masking film and complete preparation.The present invention has following beneficial effect: 1) present invention process is simple, and controllability is strong, and completely compatible with existing semiconductor technology; 2) the present invention can realize the perfect film coated of original structure, the smoothness of Quick High lateral wall, and does not affect high-aspect-ratio silicon structure; 3) be specially adapted to senser element, the application scenario of mould or microfluidic channels, when high-aspect-ratio silicon structure is used as mould, the deposition of hydrophobic polymer film is more conducive to the demoulding.
Accompanying drawing explanation
Fig. 1 ~ 4 are shown as the smooth-sided method step 1 of high-aspect-ratio silicon structure of the present invention) structural representation that presents.
Fig. 5 is shown as the smooth-sided method step 2 of high-aspect-ratio silicon structure of the present invention) structural representation that presents.
Fig. 6 is shown as the smooth-sided method step 3 of high-aspect-ratio silicon structure of the present invention) structural representation that presents.
Fig. 7 is shown as the smooth-sided method step 4 of high-aspect-ratio silicon structure of the present invention) structural representation that presents.
Element numbers explanation
101 silicon substrates
102 silicon oxide layers
103 photoresists
104 silicon oxide masking film
105 etching window
106 high-aspect-ratio silicon structures
107 fluoropolymers
Detailed description of the invention
Below by way of specific instantiation, embodiments of the present invention are described, those skilled in the art the content disclosed by this description can understand other advantages of the present invention and effect easily.The present invention can also be implemented or be applied by detailed description of the invention different in addition, and the every details in this description also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present invention.
Refer to Fig. 1 ~ Fig. 7.It should be noted that, the diagram provided in the present embodiment only illustrates basic conception of the present invention in a schematic way, then only the assembly relevant with the present invention is shown in graphic but not component count, shape and size when implementing according to reality is drawn, it is actual when implementing, and the kenel of each assembly, quantity and ratio can be a kind of change arbitrarily, and its assembly layout kenel also may be more complicated.
Embodiment 1
As shown in Fig. 1 ~ Fig. 7, the present embodiment provides a kind of smooth-sided method of high-aspect-ratio silicon structure, comprises step: in silicon substrate 101, form high-aspect-ratio silicon structure 106, and forms fluoropolymer 107 in described high-aspect-ratio silicon structure 106 sidewall.In the present embodiment, described high-aspect-ratio silicon structure is silicon deep trench or silicon deep-hole structures.
In the present embodiment, described smooth-sided method comprises the following steps:
As shown in Fig. 1 ~ Fig. 4, first step 1) is carried out, one silicon substrate 101 is provided, adopts thermal oxidation method to form silicon oxide layer 102 in described silicon substrate 101 surface, and adopt photoetching process to be prepared in silicon oxide masking film 104 that the position that need make high-aspect-ratio silicon structure 106 has etching window 105.
Particularly, this step comprises the following steps:
1-1) make glass-based metal mask version, obtain the figure of required etching structure, namely with need make high-aspect-ratio silicon structure 106 graph of a correspondence;
1-2) clean described silicon substrate 101 by standard cleaning technique, then dry, and described silicon substrate 101 carries out thermal oxide formation silicon oxide layer 102, silicon oxide layer 102 thickness is 2 ~ 5 μm, as shown in Fig. 1 ~ Fig. 2;
1-3) after the surperficial resist coating 103 of described silicon oxide layer 102, carry out uv-exposure, by the Graphic transitions of mask plate on described silicon oxide layer 102, as shown in Figure 3;
Baking oven 1-4) after above-mentioned developing process, above-mentioned resulting structures being placed in 100 ~ 160 DEG C dries 20 ~ 40min;
1-5) at 30 ~ 40 DEG C, service property (quality) ratio is the silicon oxide layer 102 of the ammonium fluoride etchant removal exposed region of 5 ~ 8: 1, and obtain etching window 105, etch period is 8 ~ 15min, as shown in Figure 4.
As shown in Figure 5, then carry out step 2), adopt inductively coupled plasma etching method to hocket etching and passivation to described silicon substrate 101 from described etching window 105, form high-aspect-ratio silicon structure 106;
In the present embodiment, SF is adopted
6and O
2mist etches described silicon substrate 101 as etching gas, adopts C
4f
8as passivation gas, passivation is carried out to described silicon substrate 101.
Further, inductively coupled plasma etching machine is adopted to etch affiliated silicon substrate 101, in etching process, described SF
6flow be 100 ~ 160sccm, described O
2flow be 10 ~ 16sccm, radio-frequency power is 500 ~ 700W, and air pressure is 90 ~ 100mtorr; When passivation is carried out to affiliated silicon substrate 101, described C
4f
8flow be 60 ~ 100sccm, radio-frequency power is 500 ~ 700W, and air pressure is 90 ~ 100mtorr.In a concrete implementation process, described SF
6flow be 130sccm, described O
2flow be 13sccm, radio-frequency power is 600W, and air pressure is 94mtorr; When passivation is carried out to affiliated silicon substrate 101, described C
4f
8flow be 80sccm, radio-frequency power is 600W, and air pressure is 94mtorr.
As shown in Figure 6, then step 3) is carried out, with CF
4, C
4f
8, C
4f
6, C
5f
8one or its be mixed into reaction source gas arbitrarily, adopt inductively coupled plasma strengthen chemical vapour deposition technique in described high-aspect-ratio silicon structure 106 side wall deposition fluoropolymer 107.Because above-mentioned lithographic method can form a large amount of ripple structions at described high-aspect-ratio silicon structure 106 sidewall, affect the smoothness of its sidewall, as shown in Figure 5, described fluoropolymer 107 can improve the smoothness of described high-aspect-ratio silicon structure 106 sidewall effectively.
In the present embodiment, described fluoropolymer 107 is polytetrafluoroethylene (PTFE).Described inductively coupled plasma strengthens chemical vapour deposition (CVD) and carries out in sense coupling machine, and the flow of described reaction source gas is 100 ~ 300sccm, and radio-frequency power is 500 ~ 800W, and air pressure is 30 ~ 100mtorr.In a concrete implementation process, described reaction source gas adopts C
4f
8, the flow of gas is 100sccm, and radio-frequency power is 600W, and air pressure is 40mtorr.
As shown in Figure 7, finally carry out step 4), remove described photoresist 103 and silicon oxide masking film 104.
In the present embodiment, at 30 ~ 40 DEG C service property (quality) ratio be 5 ~ 8: 1 ammonium fluoride etchant remove described silicon oxide masking film 104, to obtain the high-aspect-ratio silicon structure of smooth-sided.In a concrete implementation process, at 35 DEG C service property (quality) ratio be 7: 1 ammonium fluoride etchant remove described silicon oxide masking film 104.
Embodiment 2
As shown in Fig. 1 ~ Fig. 7, the present embodiment provides a kind of smooth-sided method of high-aspect-ratio silicon structure, and described smooth-sided method comprises the following steps:
As shown in Fig. 1 ~ Fig. 4, first step 1) is carried out, one silicon substrate 101 is provided, adopts thermal oxidation method to form silicon oxide layer 102 in described silicon substrate 101 surface, and adopt photoetching process to be prepared in silicon oxide masking film 104 that the position that need make high-aspect-ratio silicon structure 106 has etching window 105.
Particularly, this step comprises the following steps:
1-1) make glass-based metal mask version, obtain the figure of required etching structure, namely with need make high-aspect-ratio silicon structure 106 graph of a correspondence;
1-2) clean described silicon substrate 101 by standard cleaning technique, then dry, and described silicon substrate 101 carries out thermal oxide formation silicon oxide layer 102, silicon oxide layer 102 thickness is 2 ~ 5 μm, as shown in Fig. 1 ~ Fig. 2;
1-3) after the surperficial resist coating 103 of described silicon oxide layer 102, carry out uv-exposure, by the Graphic transitions of mask plate on described silicon oxide layer 102, as shown in Figure 3;
The baking oven above-mentioned resulting structures being placed in 100 ~ 160 DEG C after 1-4) developing to described photoresist 103 dries 20 ~ 40min;
1-5) at 30 ~ 40 DEG C, service property (quality) ratio is the silicon oxide layer 102 of the ammonium fluoride etchant removal exposed region of 5 ~ 8: 1, and obtain etching window 105, etch period is 8 ~ 15min, as shown in Figure 4.
As shown in Figure 5, then carry out step 2), adopt inductively coupled plasma etching method to hocket etching and passivation to described silicon substrate 101 from described etching window 105, form high-aspect-ratio silicon structure 106.
In the present embodiment, SF is adopted
6and O
2mist etches described silicon substrate 101 as etching gas, adopts C
4f
8as passivation gas, passivation is carried out to described silicon substrate 101.
Further, inductively coupled plasma etching machine is adopted to etch affiliated silicon substrate 101, in etching process, described SF
6flow be 100 ~ 160sccm, described O
2flow be 10 ~ 16sccm, radio-frequency power is 500 ~ 700W, and air pressure is 90 ~ 100mtorr; When passivation is carried out to affiliated silicon substrate 101, described C
4f
8flow be 60 ~ 100sccm, radio-frequency power is 500 ~ 700W, and air pressure is 90 ~ 100mtorr.In a concrete implementation process, described SF
6flow be 130sccm, described O
2flow be 13sccm, radio-frequency power is 600W, and air pressure is 94mtorr; When passivation is carried out to affiliated silicon substrate 101, described C
4f
8flow be 80sccm, radio-frequency power is 600W, and air pressure is 94mtorr.
As shown in Figure 6, then carry out step 3), adopt spraying process to be deposited on described high-aspect-ratio silicon structure 106 sidewall surfaces the butyl acetate solution of polytetrafluoroethylene (PTFE), and carry out heating described butyl acetate solvent is all volatilized.
In the present embodiment, heat described butyl acetate solvent is all volatilized in vacuum, heating-up temperature is 60 ~ 80 DEG C.In a concrete implementation process, described silicon substrate 101 is placed in vacuum drying wherein, at 70 DEG C, makes described butyl acetate solvent all volatilize.Because above-mentioned lithographic method can form a large amount of ripple structions at described high-aspect-ratio silicon structure 106 sidewall, affect the smoothness of its sidewall, as shown in Figure 5, described fluoropolymer 107 can improve the smoothness of described high-aspect-ratio silicon structure 106 sidewall effectively.
As shown in Figure 7, finally carry out step 4), remove described photoresist 103 and silicon oxide masking film 104.
In the present embodiment, at 30 ~ 40 DEG C service property (quality) ratio be 5 ~ 8: 1 ammonium fluoride etchant remove described silicon oxide masking film 104, to obtain the high-aspect-ratio silicon structure of smooth-sided.In a concrete implementation process, at 35 DEG C service property (quality) ratio be 7: 1 ammonium fluoride etchant remove described silicon oxide masking film 104.
Embodiment 3
As shown in Fig. 1 ~ Fig. 7, the present embodiment provides a kind of smooth-sided method of high-aspect-ratio silicon structure, and described smooth-sided method comprises the following steps:
As shown in Fig. 1 ~ Fig. 4, first step 1) is carried out, one silicon substrate 101 is provided, adopts thermal oxidation method to form silicon oxide layer 102 in described silicon substrate 101 surface, and adopt photoetching process to be prepared in silicon oxide masking film 104 that the position that need make high-aspect-ratio silicon structure 106 has etching window 105.Its concrete steps are as embodiment 1.
As shown in Figure 5, then carry out step 2), said structure is placed in KOH solution enter corrosion form high-aspect-ratio silicon structure 106 with the silicon substrate 101 below described etching window 105.In the present embodiment, corrosion temperature is 40 ~ 60 DEG C, and etching time is 5 ~ 12h.In a concrete implementation process, corrosion temperature is 50 DEG C, and etching time is 10h.This corrosion process easily forms wave structure at described high-aspect-ratio silicon structure 106 sidewall, as shown in Figure 5.
As shown in Figure 6, then step 3) is carried out, with CF
4, C
4f
8, C
4f
6, C
5f
8one or its be mixed into reaction source gas arbitrarily, adopt inductively coupled plasma strengthen chemical vapour deposition technique in described high-aspect-ratio silicon structure 106 side wall deposition fluoropolymer 107.Its concrete steps are as embodiment 1, and described fluoropolymer 107 effectively can improve the smoothness of described high-aspect-ratio silicon structure 106 sidewall.
As shown in Figure 7, finally carry out step 4), remove described photoresist 103 and silicon oxide masking film 104.Its concrete steps are as embodiment 1.
In sum, the invention provides a kind of smooth-sided method of high-aspect-ratio silicon structure, first form silicon oxide masking film in surface of silicon, then in silicon substrate, high-aspect-ratio silicon structure is made according to silicon oxide masking film, then adopt inductively coupled plasma enhancing chemical vapour deposition technique or spraying process to form fluoropolymer in described silicon of high aspect ratio structure side wall, finally remove silicon oxide masking film and complete preparation.The present invention has following beneficial effect: 1) present invention process is simple, and controllability is strong, and completely compatible with existing semiconductor technology; 2) the present invention can realize the perfect film coated of original structure, the smoothness of Quick High lateral wall, and does not affect high-aspect-ratio silicon structure; 3) be specially adapted to senser element, the application scenario of mould or microfluidic channels, when high-aspect-ratio silicon structure is used as mould, the deposition of hydrophobic polymer film is more conducive to the demoulding.So the present invention effectively overcomes various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim of the present invention.
Claims (8)
1. the smooth-sided method of a high-aspect-ratio silicon structure, it is characterized in that, comprise step: in silicon substrate, form high-aspect-ratio silicon structure, and form fluoropolymer in the sidewall of described high-aspect-ratio silicon structure, wherein, the method in the sidewall formation fluoropolymer of described high-aspect-ratio silicon structure comprises: with CF
4, C
4f
8, C
4f
6, C
5f
8one or its be mixed into reaction source gas arbitrarily, adopt inductively coupled plasma to strengthen chemical vapour deposition technique in described silicon of high aspect ratio structure side wall deposition fluoropolymer.
2. the smooth-sided method of high-aspect-ratio silicon structure according to claim 1, is characterized in that, described fluoropolymer is polytetrafluoroethylene (PTFE).
3. the smooth-sided method of high-aspect-ratio silicon structure according to claim 1 and 2, is characterized in that, comprise the following steps:
1) silicon substrate is provided, adopts thermal oxidation method to form silicon oxide layer in described surface of silicon, and adopt photoetching process to be prepared in silicon oxide masking film that the position that need make high-aspect-ratio silicon structure has etching window;
2) adopt inductively coupled plasma etching method to hocket etching and passivation to described silicon substrate from described etching window, form high-aspect-ratio silicon structure;
3) with CF
4, C
4f
8, C
4f
6, C
5f
8one or its be mixed into reaction source gas arbitrarily, adopt inductively coupled plasma to strengthen chemical vapour deposition technique in described silicon of high aspect ratio structure side wall deposition fluoropolymer;
4) described silicon oxide masking film is removed.
4. the smooth-sided method of high-aspect-ratio silicon structure according to claim 3, is characterized in that: step 2) in, adopt SF
6and O
2mist etches described silicon substrate as etching gas, adopts C
4f
8as passivation gas, passivation is carried out to described silicon substrate.
5. the smooth-sided method of high-aspect-ratio silicon structure according to claim 4, is characterized in that: when etching described silicon substrate, described SF
6flow be 100 ~ 160sccm, described O
2flow be 10 ~ 16sccm, radio-frequency power is 500 ~ 700W, and air pressure is 90 ~ 100mtorr; When passivation is carried out to described silicon substrate, described C
4f
8flow be 60 ~ 100sccm, radio-frequency power is 500 ~ 700W, and air pressure is 90 ~ 100mtorr.
6. the smooth-sided method of high-aspect-ratio silicon structure according to claim 3, is characterized in that: the flow of described reaction source gas is 100 ~ 300sccm, and radio-frequency power is 500 ~ 800W, and air pressure is 30 ~ 100mtorr.
7. the smooth-sided method of high-aspect-ratio silicon structure according to claim 1 and 2, is characterized in that, comprise the following steps:
1) silicon substrate is provided, adopts thermal oxidation method to form silicon oxide layer in described surface of silicon, and adopt photoetching process to be prepared in silicon oxide masking film that the position that need make high-aspect-ratio silicon structure has etching window;
2) said structure is placed in KOH solution enter corrosion form high-aspect-ratio silicon structure with the silicon substrate below described etching window;
3) with CF
4, C
4f
8, C
4f
6, C
5f
8one or its be mixed into reaction source gas arbitrarily, adopt inductively coupled plasma to strengthen chemical vapour deposition technique in described silicon of high aspect ratio structure side wall deposition fluoropolymer;
4) described silicon oxide masking film is removed.
8. the smooth-sided method of high-aspect-ratio silicon structure according to claim 7, is characterized in that: step 2) in, corrosion temperature is 40 ~ 60 DEG C, and etching time is 5 ~ 12h.
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| CN104835776B (en) * | 2014-02-08 | 2018-09-07 | 中芯国际集成电路制造(上海)有限公司 | The production method of TSV blind holes |
| CN105329846A (en) * | 2014-08-12 | 2016-02-17 | 中国科学院微电子研究所 | Etching method in MEMS technology |
| CN105584986B (en) * | 2014-10-23 | 2018-02-09 | 中国科学院微电子研究所 | A kind of silicon deep hole lithographic method |
| CN105600740A (en) * | 2015-12-23 | 2016-05-25 | 苏州工业园区纳米产业技术研究院有限公司 | Method for preparing high aspect ratio silicon microstructure on basis of deep reactive ion etching technology |
| CN105845773B (en) * | 2016-03-30 | 2017-08-25 | 江苏欧达丰新能源科技发展有限公司 | Solar battery sheet three-dimensional PN junction processing technology |
| CN108456861B (en) * | 2018-03-14 | 2020-10-16 | 河南科技大学 | Preparation method of anti-static strong-hydrophobicity composite film layer |
| CN109884064B (en) * | 2019-04-24 | 2021-09-07 | 山东协和学院 | Data acquisition device of liquid sensor |
| CN115206796A (en) * | 2022-09-16 | 2022-10-18 | 杭州中欣晶圆半导体股份有限公司 | Method for performing fixed-point deep silicon etching on surface of silicon wafer |
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| CN102031525A (en) * | 2009-09-29 | 2011-04-27 | 中微半导体设备(上海)有限公司 | Method for etching deep through silicon via (TSV) |
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