CN102897708B - Cutting method for MEMS wafer - Google Patents
Cutting method for MEMS wafer Download PDFInfo
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- CN102897708B CN102897708B CN201110215784.6A CN201110215784A CN102897708B CN 102897708 B CN102897708 B CN 102897708B CN 201110215784 A CN201110215784 A CN 201110215784A CN 102897708 B CN102897708 B CN 102897708B
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Abstract
The invention relates to a method for a MEMS wafer. The cutting method comprises the following steps of pasting a membrane on the front surface of the wafer to protect an MEMS structure; focusing a laser on the inner part of the wafer, irradiating to form a modified layer at a position from the front surface of the wafer to the inner part of the wafer; irradiating the laser to the back surface of the wafer at a position corresponding to that of the modified layer so as to form a mark groove on the back surface of the wafer; performing water jet cutting on the back surface of the wafer along the position of the mark groove but do not reach the bottom so as to form a water jet cutting groove from the back surface of the wafer to the inner part of the wafer, wherein one end far away from the back surface of the wafer of the water jet cutting groove is connected with the modified layer; and extending splits along the modified layer till to all the MEMS structures are separated completely from each other. The method for the MEMS wafer combines the advantages of laser irradiation and water jet cutting, and realizes the edge breakage-free and low-contamination cutting for the MEMS wafer.
Description
Technical field
The present invention relates to a kind of cutting method of semiconductor crystal wafer, particularly relate to the cutting method of a kind of MEMS (Micro-Electro-Mechanical Systems, microelectromechanical systems) wafer.
Background technology
At present, the cutting method of MEMS wafer mainly contains back side water cutter hemisection and thoroughly adds sliver technique, and laser technology.As everyone knows, MEMS is very responsive to particle, and the particle produced in cutting technique can affect the reliability of device, and serious also can cause component failure.Thoroughly add with regard to sliver technique with regard to back side water cutter hemisection, although it can protect MEMS to avoid the cutting water contamination of silicon powder-containing in cutting process, but follow-up sliver technique can produce irregular sliver section, and the front that slight crack is not neat, serious also can damage inside chip; Also can produce larger particles in process simultaneously, affect the reliability of device.In addition, in the high pressure waterjet of the back side, if wafer rear does not do dual surface lithography, can occur because contraposition skew causes drawing the situation being biased to chip top.And with regard to laser cutting parameter, although the raw edges that it produces is neat, but for the thicker wafer of repeatedly laser, a large amount of larger particles can be produced at the upgrading layer place of laser, if these particles drop to chip top can cause the low good of MEMS and inefficacy equally.
Summary of the invention
Technical problem to be solved by this invention is, existing MEMS wafer cutting method cannot avoid device stain by addle particle contaminant, side bulky grain and collapse the defects such as limit, the present invention aims to provide a kind of new MEMS wafer cutting method, realizes MEMS wafer without the cutting effect collapsing limit, low contamination.
In order to solve the problems of the technologies described above, technical scheme proposed by the invention is: a kind of cutting method of MEMS wafer, and it comprises the following steps:
Film is attached to the front protecting MEMS structure of wafer;
Laser Focusing is irradiated in inside wafer, forms upgrading layer from wafer frontside to the position of inside wafer, then carry out laser irradiation in the position that wafer rear is corresponding with described upgrading layer, form labeled slots at wafer rear;
Carry out high pressure waterjet along the position of labeled slots at wafer rear and do not switch to the end, form high pressure waterjet groove from wafer rear to inside wafer, described high pressure waterjet groove is connected with upgrading layer away from one end of wafer rear; With
Carry out sliver along upgrading layer to extend, until separate completely between each MEMS structure.
Further, in different embodiments, wherein protect in the step of MEMS structure, the first film being provided with hole is attached to wafer frontside, described hole and MEMS structure one_to_one corresponding, then the second complete film is attached to above the first film.
Further, in different embodiments, the size of its mesopore slightly larger than MEMS structure, the position, middle of MEMS structure corresponding aperture.
Further, in different embodiments, wherein formed in the step of upgrading layer, successively Laser Focusing is carried out twice laser irradiation in inside wafer, form the first upgrading layer and the second upgrading layer, described first upgrading layer and the second upgrading layer are separated from each other.
Further, in different embodiments, wherein the degree of depth of the first upgrading layer is from wafer frontside to inside wafer 0 ~ 25 μm, and the degree of depth of the second upgrading layer is from wafer frontside to inside wafer 35 ~ 60 μm, and the width of the first upgrading layer and the second upgrading layer is 20 ~ 25 μm.
Further, in different embodiments, wherein the first upgrading layer and the second upgrading layer at a distance of 0 ~ 10 μm.
Further, in different embodiments, wherein the degree of depth of labeled slots is 3 ~ 5 μm.
Further, in different embodiments, wherein the width of high pressure waterjet groove is 15 ~ 40 μm.
Further, in different embodiments, after the step of wherein high pressure waterjet, before the step that sliver is extended, also comprise and wafer rear high pressure de-ionized water cleaned and dries.
Further, in different embodiments, in the step that wherein sliver is extended, carry out sliver along upgrading layer and extend, then at wafer rear pad pasting, then the film of wafer frontside is taken off, again extend, until separate completely between each MEMS structure.
Compared with prior art, the invention has the beneficial effects as follows: the cutting method of MEMS wafer of the present invention, first carry out laser from wafer frontside to the shallow-layer of inside wafer and irradiate formation upgrading layer, then carry out high pressure waterjet at wafer rear and do not switch to the end, extend technique by each MEMS structure separately again with sliver, the present invention fully irradiates the advantage with high pressure waterjet in conjunction with laser, realize collapsing limit, low contamination cutting, for a chip isolation technics difficult problem for current MEMS provides good solution to the nothing of MEMS wafer.
Accompanying drawing explanation
Fig. 1 is the generalized section protecting MEMS structure step in the cutting method of the MEMS wafer that the present invention relates to;
Fig. 2 is the generalized section of laser irradiation step in the cutting method of the MEMS wafer that the present invention relates to;
Fig. 3 is the generalized section of high pressure waterjet step in the cutting method of the MEMS wafer that the present invention relates to; With
Fig. 4 is that in the cutting method of the MEMS wafer that the present invention relates to, sliver is extended the generalized section of step.
Detailed description of the invention
The specific embodiment of the present invention is described in detail below in conjunction with accompanying drawing.
The cutting method of the MEMS wafer that the present invention relates to, it comprises the following steps:
The first step, protection MEMS structure,
As shown in Figure 1, the front 11 of MEMS wafer 1 is provided with MEMS structure 13.The first film 2 being provided with hole 21 is attached to wafer frontside 11, hole 21 and MEMS structure 13 one_to_one corresponding, and the size in hole 21 is slightly larger than MEMS structure 13, the position, middle of MEMS structure corresponding aperture 21.Be attached to above the first film 2 by the second complete film 22 again, form a closed guard space thus at hole 21 place, MEMS structure 13 is effectively protected.
Second step, wafer is thinning,
Carry out thinning to the back side 12 of wafer 1.Because MEMS structure 13 has been subjected to the protection of the first film 2 and the second film 22, does not have addle in thinning process and entered wafer frontside 11.Thinning rear replacing second film 22, the second film that subsides one are clean again.
3rd step, laser irradiates,
Laser Focusing is irradiated in inside wafer, forms upgrading layer from wafer frontside 11 to the position of inside wafer.In present embodiment, successively Laser Focusing is carried out twice laser irradiation in inside wafer, form the first upgrading layer 31 and the second upgrading layer 32.As shown in Figure 2, first, by Laser Focusing in carry out to the position of inside wafer 12.5 μm of degree of depth from wafer frontside 11 first time laser irradiate, laser width 20 ~ 25 μm, forms the first upgrading layer 31, its degree of depth from wafer frontside 11 to inside wafer 0 ~ 25 μm.Then, position along distance 0 ~ 10 μm, the first upgrading layer 31 place, direction perpendicular to crystal column surface is done second time laser and is irradiated formation second upgrading layer 32, Laser Focusing is irradiated in carrying out second time laser to the position of inside wafer 47.5 μm of degree of depth from wafer frontside 11, laser width or 20 ~ 25 μm, form the second upgrading layer 32, its degree of depth from wafer frontside 11 to inside wafer 35 ~ 60 μm.Second upgrading layer 32 and the first upgrading layer 31 are at a distance of 0 ~ 10 μm.Have the lattice of two positions to be interrupted by laser from wafer frontside 11 to inside wafer 50 ~ 60 μm of degree of depth thus, and two places are separated from each other by the lattice interrupted.Because laser only carries out the irradiation of twice separation, so laser section can not produce a large amount of larger silicon grains on the top layer of wafer frontside 11.
Then laser irradiation is carried out in corresponding with upgrading layer on wafer rear 12 position, and form labeled slots 33 at wafer rear, its degree of depth is 3 ~ 5 μm.
4th step, high pressure waterjet,
As shown in Figure 3, position along labeled slots 33 is carried out high pressure waterjet at wafer rear 12 and does not switch to the end, the wafer of residual 50 ~ 60 μm of thickness, form high pressure waterjet groove 34 from wafer rear 12 to inside wafer, high pressure waterjet groove 34 is connected with the second upgrading layer 32 substantially away from one end of wafer rear 12.Due to the precision reason of technique, high pressure waterjet groove 34 can be connected completely with the second upgrading layer 32, also can be locally overlapping, can also mutually be close to.In different embodiments, the width of high pressure waterjet groove 34 can be 15 ~ 40 μm; In present embodiment, the width of high pressure waterjet groove 34 is 35 μm.
Now, wafer 1 or complete wafer, wafer frontside 11 also has the protection of the first film 2 and the second film 22, so high pressure waterjet process apoplexy involving the solid organs water contamination not wafer frontside 11.
After high pressure waterjet completes, wafer rear 12 is cleaned by high pressure de-ionized water and dries.
5th step, sliver is extended,
As shown in Figure 4, first carry out sliver to extend, because being adopt to swash light-struck method and interrupt lattice formation upgrading layer 31 from wafer frontside 11 to the shallow-layer (50 ~ 60 μm) of inside wafer, 32, so wafer 1 can be held along laser place and upgrading slabbing when sliver is extended, after extending, there is not the situation collapsing limit.At wafer rear 12 pad pasting 24 after extending, the film then taking wafer frontside 11 off is extended again, is eventually pulled completely out after extending between each MEMS structure.
In sum, the cutting method of MEMS wafer of the present invention, first carry out laser irradiation from wafer frontside to the shallow-layer (50 ~ 60 μm) of inside wafer, the cutting (wafers of residual 50 ~ 60 μm of thickness) that water cutter does not switch to the end is carried out again at wafer rear, then to extend the method that each MEMS structure separates by technique with sliver, realize MEMS wafer without collapsing limit, low contamination cutting.
The foregoing is only better embodiment of the present invention; protection scope of the present invention is not limited with above-mentioned embodiment; in every case those of ordinary skill in the art modify or change according to the equivalence that disclosure of the present invention is done, and all should include in the protection domain recorded in claims.
Claims (9)
1. a cutting method for MEMS wafer, is characterized in that: it comprises the following steps:
Film is attached to the front protecting MEMS structure of wafer;
Laser Focusing is irradiated in inside wafer, forms upgrading layer from wafer frontside to the position of inside wafer, then carry out laser irradiation in the position that wafer rear is corresponding with described upgrading layer, form labeled slots at wafer rear;
Carry out high pressure waterjet along the position of labeled slots at wafer rear and do not switch to the end, form high pressure waterjet groove from wafer rear to inside wafer, described high pressure waterjet groove is connected with upgrading layer away from one end of wafer rear; With
Carry out sliver along upgrading layer to extend, until separate completely between each MEMS structure,
In the step of described formation upgrading layer, successively Laser Focusing is carried out twice laser irradiation in inside wafer, form the first upgrading layer and the second upgrading layer, described first upgrading layer and the second upgrading layer are separated from each other.
2. the cutting method of MEMS wafer according to claim 1; it is characterized in that: in the step of described protection MEMS structure; the first film being provided with hole is attached to wafer frontside, described hole and MEMS structure one_to_one corresponding, then the second complete film is attached to above the first film.
3. the cutting method of MEMS wafer according to claim 2, is characterized in that: the size in described hole slightly larger than MEMS structure, the position, middle of MEMS structure corresponding aperture.
4. the cutting method of MEMS wafer according to claim 1, it is characterized in that: the degree of depth of described first upgrading layer is to inside wafer 0 ~ 25 μm from wafer frontside, the degree of depth of the second upgrading layer is from wafer frontside to inside wafer 35 ~ 60 μm, and the width of the first upgrading layer and the second upgrading layer is 20 ~ 25 μm.
5. the cutting method of MEMS wafer according to claim 1, is characterized in that: described first upgrading layer and the second upgrading layer are at a distance of 0 ~ 10 μm.
6. the cutting method of MEMS wafer according to claim 1, is characterized in that: the degree of depth of described labeled slots is 3 ~ 5 μm.
7. the cutting method of MEMS wafer according to claim 1, is characterized in that: the width of described high pressure waterjet groove is 15 ~ 40 μm.
8. the cutting method of MEMS wafer according to claim 1, is characterized in that: after the step of described high pressure waterjet, before the step that sliver is extended, also comprises and to clean wafer rear high pressure de-ionized water and to dry.
9. the cutting method of MEMS wafer according to claim 1, is characterized in that: in the step that described sliver is extended, and carries out sliver extend along upgrading layer, then at wafer rear pad pasting, again the film of wafer frontside is taken off, again extend, until separate completely between each MEMS structure.
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Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104108139B (en) * | 2013-04-18 | 2015-12-09 | 中芯国际集成电路制造(上海)有限公司 | A kind of cutting method of MEMS wafer |
| CN105328804B (en) * | 2014-06-20 | 2017-04-05 | 中芯国际集成电路制造(上海)有限公司 | A kind of cutting method of wafer |
| CN104192791A (en) * | 2014-09-15 | 2014-12-10 | 华东光电集成器件研究所 | Cutting method for MEMS (Micro-electromechanical Systems) wafer |
| CN106825941B (en) * | 2016-12-28 | 2019-05-10 | 武汉光谷航天三江激光产业技术研究院有限公司 | A kind of front laser inner-cutting method of Silicon Wafer |
| CN106711091B (en) * | 2017-01-20 | 2019-07-02 | 中国科学院微电子研究所 | A kind of MEMS wafer cutting method and MEMS chip production method |
| CN108147363B (en) * | 2017-12-22 | 2019-09-20 | 烟台睿创微纳技术股份有限公司 | A kind of separation method of MEMS wafer chip |
| CN110444507A (en) * | 2019-08-15 | 2019-11-12 | 德淮半导体有限公司 | Encapsulate the packaging method of cuticula and semiconductor devices |
| CN111975211B (en) * | 2020-08-24 | 2022-09-30 | 松山湖材料实验室 | Laser processing method for wafer special-shaped structure |
| CN114160958A (en) * | 2021-12-07 | 2022-03-11 | 华东光电集成器件研究所 | Method for combining laser invisible cutting and mechanical cutting of wafer |
| CN114986358B (en) * | 2022-05-27 | 2024-04-09 | 深圳市奥伦德元器件有限公司 | Chip dicing method, apparatus, controller, and computer-readable storage medium |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1964018A (en) * | 2005-11-09 | 2007-05-16 | 株式会社东芝 | Semiconductor component manufacture method |
| US7964475B2 (en) * | 2006-12-11 | 2011-06-21 | Panasonic Corporation | Semiconductor wafer, method of manufacturing the same and semiconductor device |
| CN102120560A (en) * | 2010-01-12 | 2011-07-13 | 南茂科技股份有限公司 | Cutting method for micro-electro-mechanical wafer |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US7838331B2 (en) * | 2005-11-16 | 2010-11-23 | Denso Corporation | Method for dicing semiconductor substrate |
| JP2007165371A (en) * | 2005-12-09 | 2007-06-28 | Toshiba Corp | Method of manufacturing semiconductor device |
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- 2011-07-29 CN CN201110215784.6A patent/CN102897708B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1964018A (en) * | 2005-11-09 | 2007-05-16 | 株式会社东芝 | Semiconductor component manufacture method |
| US7964475B2 (en) * | 2006-12-11 | 2011-06-21 | Panasonic Corporation | Semiconductor wafer, method of manufacturing the same and semiconductor device |
| CN102120560A (en) * | 2010-01-12 | 2011-07-13 | 南茂科技股份有限公司 | Cutting method for micro-electro-mechanical wafer |
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