CN102891227A - Light emitting diode - Google Patents
Light emitting diode Download PDFInfo
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- CN102891227A CN102891227A CN 201210345884 CN201210345884A CN102891227A CN 102891227 A CN102891227 A CN 102891227A CN 201210345884 CN201210345884 CN 201210345884 CN 201210345884 A CN201210345884 A CN 201210345884A CN 102891227 A CN102891227 A CN 102891227A
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- emitting diode
- layer
- light emitting
- electrode
- light
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Abstract
The invention is suitable for the technical field of photoelectricity, and provides a light emitting diode. The light emitting diode comprises a light emitting diode chip and a reflecting diode substrate; the light emitting diode chip is arranged on the light emitting diode substrate in an inverted manner; a transparent sapphire substrate is arranged on the light emitting diode chip; a GaN structure layer is arranged on the sapphire substrate in a welding manner; an electrode P and an electrode N are arranged on the lower surface of the GaN structure layer; a monocrystal substrate formed by doping N-type single-side polished monocrystal is arranged on the reflecting diode substrate; a growth oxidization layer grows on the polished surface of the monocrystal substrate; a plurality of diffusion windows for forming the P-type layer are arranged on the growth oxidization layer; a contact layer is arranged on the P-type layer; a metal layer is arranged on the contact layer; the metal layer is connected with an electrode of the light emitting diode chip, and an extension electrode is arranged on the contact layer. The light emitting diode is simple in structure, and the LED (light-emitting diode) is good in radiation effect, and the service life of the LED is guaranteed.
Description
Technical field
The invention belongs to field of photoelectric technology, relate in particular to a kind of light-emitting diode.
Background technology
LED take sapphire as substrate, mainly be blue light, green glow and add fluorescent material after white light LEDs.
At present, LED to get optical efficiency lower, most of energy all is converted to heat, in order to guarantee the life-span of LED, the General Requirements radiating effect is structure preferably, still, the radiating effect of sapphire and GaN material is relatively poor, do not go out if the heat of led chip is loose, then can speed-up chip aging, chip failure.
Summary of the invention
The object of the present invention is to provide a kind of light-emitting diode, it is relatively poor to be intended to solve in the prior art radiating effect of sapphire and GaN material, does not go out if the heat of led chip is loose, then can speed-up chip aging, the problem of chip failure.
The present invention is achieved in that a kind of light-emitting diode, and described light-emitting diode comprises light-emitting diode chip for backlight unit and reflective diode base plate, and the inverted mode of described light-emitting diode chip for backlight unit is arranged on the described reflective diode base plate, wherein:
Described light-emitting diode chip for backlight unit is provided with a transparent Sapphire Substrate, is arranged on GaN structure sheaf on the described Sapphire Substrate by welding manner, and the lower surface of described GaN structure sheaf is provided with P electrode and N electrode;
Described reflective diode base plate one is doped with the single crystalline substrate of N-type single-sided polishing crystal formation, the burnishing surface of described single crystalline substrate is provided with one deck growth oxide layer, described growth oxide layer is provided with several in order to form the diffusion window of P type layer, described P type layer is provided with contact layer, described contact layer is provided with metal level, the electrode of described metal level connecting luminous diode chip, described contact layer is provided with extension electrode.
The present invention is simple in structure, uses the LED of this light-emitting diode, and good heat dissipation effect has guaranteed useful life of LED.
Description of drawings
Fig. 1 is the structural representation of light-emitting diode provided by the invention.
Embodiment
In order to make purpose of the present invention, technical scheme and advantage clearer, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, is not intended to limit the present invention.
Fig. 1 shows the structural representation of light-emitting diode provided by the invention, for convenience of explanation, has only provided part related to the present invention among the figure.
Light-emitting diode provided by the invention comprises light-emitting diode chip for backlight unit 1 and reflective diode base plate 2, and described light-emitting diode chip for backlight unit 1 inverted mode is arranged on the described reflective diode base plate 2, wherein:
Light-emitting diode chip for backlight unit 1 provided by the invention is provided with a transparent Sapphire Substrate 11, be arranged on GaN structure sheaf 12 on the described Sapphire Substrate 11 by welding manner, the lower surface of described GaN structure sheaf 12 is provided with P electrode 13 and N electrode 14, and described light-emitting diode chip for backlight unit is arranged on the substrate in inverted mode.
In the present invention, P electrode 13 and N electrode 14 are whole structure.
Light-emitting diode 2 provided by the invention comprises that one is doped with the single crystalline substrate 21 of N-type single-sided polishing crystal formation, the burnishing surface of described single crystalline substrate 1 is provided with one deck growth oxide layer 22, described growth oxide layer 22 is provided with several in order to form the diffusion window of P type layer 23, described P type layer 23 is provided with contact layer 24, described contact layer 24 is provided with metal level 25, the electrode of described metal level 25 connecting luminous diode chips, described contact layer is provided with extension electrode 26.
For the ease of understanding the following manufacture craft that provides light-emitting diode provided by the invention:
1. select monocrystalline silicon piece as single crystalline substrate;
2. the method with the heat growth forms the growth oxide layer at the burnishing surface of described single crystalline substrate;
3. erode away the diffusion window with photoetching;
4. form P type layer structure with the semiconductor diffusion technology;
5. form contact layer at P type layer by evaporation;
6. form metal level in described contact layer welding.
The present invention is simple in structure, uses the LED of this light-emitting diode, and good heat dissipation effect has guaranteed useful life of LED.
The above only is preferred embodiment of the present invention, not in order to limiting the present invention, all any modifications of doing within the spirit and principles in the present invention, is equal to and replaces and improvement etc., all should be included within protection scope of the present invention.
Claims (1)
1. a light-emitting diode is characterized in that, described light-emitting diode comprises light-emitting diode chip for backlight unit and reflective diode base plate, and the inverted mode of described light-emitting diode chip for backlight unit is arranged on the described reflective diode base plate, wherein:
Described light-emitting diode chip for backlight unit is provided with a transparent Sapphire Substrate, is arranged on GaN structure sheaf on the described Sapphire Substrate by welding manner, and the lower surface of described GaN structure sheaf is provided with P electrode and N electrode;
Described reflective diode base plate one is doped with the single crystalline substrate of N-type single-sided polishing crystal formation, the burnishing surface of described single crystalline substrate is provided with one deck growth oxide layer, described growth oxide layer is provided with several in order to form the diffusion window of P type layer, described P type layer is provided with contact layer, described contact layer is provided with metal level, the electrode of described metal level connecting luminous diode chip, described contact layer is provided with extension electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201210345884 CN102891227A (en) | 2012-09-18 | 2012-09-18 | Light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201210345884 CN102891227A (en) | 2012-09-18 | 2012-09-18 | Light emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102891227A true CN102891227A (en) | 2013-01-23 |
Family
ID=47534679
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201210345884 Pending CN102891227A (en) | 2012-09-18 | 2012-09-18 | Light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102891227A (en) |
-
2012
- 2012-09-18 CN CN 201210345884 patent/CN102891227A/en active Pending
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20130123 |