CN102868089A - Device and method of using single-grating external cavity feedback to realize beam combination of multiple semiconductor lasers - Google Patents
Device and method of using single-grating external cavity feedback to realize beam combination of multiple semiconductor lasers Download PDFInfo
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- CN102868089A CN102868089A CN2012103619796A CN201210361979A CN102868089A CN 102868089 A CN102868089 A CN 102868089A CN 2012103619796 A CN2012103619796 A CN 2012103619796A CN 201210361979 A CN201210361979 A CN 201210361979A CN 102868089 A CN102868089 A CN 102868089A
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Abstract
The invention relates to a device and a method of using single-grating external cavity feedback to realize beam combination of multiple semiconductor lasers and belongs to the technical field of semiconductor lasers. Semiconductor laser modules and external cavity anti-peep mirrors form two laser oscillation cavities respectively, and two linear polarization laser beams which are identical to a unit beam in quality and multiplied in power are outputted from the external cavity anti-peep mirrors via common grating angular dispersion effect and feedback effect of the external cavity anti-peep mirrors to realize high-power and high-beam-quality single laser beam output through polarization beam combination mirrors. The device and the method of using single-grating external cavity feedback to realize beam combination of multiple semiconductor lasers can realize beam combination within a full semiconductor laser waveband range and narrow beam combination wavelength intervals, and have the advantages of high output laser power and high beam quality, and the integration level is high as multi-beam spectrum combination is realized by one grating.
Description
Technical field
The invention belongs to the semiconductor laser technique field, relate in particular to the single grating of a kind of employing, feed back by exocoel, realize that a plurality of semiconductor laser elements close and restraint into two-beam, realize that in conjunction with polarization coupling the monochromatic light grid exocoel feedback of utilizing of super brightness, the output of high power single laser beam realizes that multiple semiconductor swashs the device and method of combiner again.
Background technology
Semiconductor laser has that conversion efficiency is high, long service life, volume is little and the advantage such as lightweight, as direct light source, low-power device is realized extensive use at message areas such as communication, printing, bar code scanning and optical storages already, high power device is subjected to the restriction of beam quality and brightness conditions, and the power density that arrives the target place is low, only be applied at present some and low require occasion, such as Plastic Welding, laser braze welding etc.For the field of having relatively high expectations such as metal solder, laser cutting etc., the application of semiconductor laser still acquires a certain degree of difficulty, improve the beam quality of semiconductor laser, improve the brightness of outgoing laser beam, to the development of high power semiconductor lasers with use significant.
The beam quality of semiconductor laser adopts optical parameter long-pending (BPP) to estimate, and is defined as Beam waist radius w
0With the product of far field divergence half angle θ/2, optical parameter is long-pending less, and beam quality is better.
BPP=?w
0*θ/2
Because the reasons in structure of semiconductor laser, the quick shaft direction optical parameter that is parallel to the epitaxial loayer direction is amassed (BPP
f) little, near diffraction limit, beam quality is very good, amasss perpendicular to the slow-axis direction optical parameter of epitaxial loayer direction to be quick shaft direction (BPP
s) thousands of times, beam quality is poor, is unfavorable for the practical application of semiconductor laser.
The brightness of semiconductor laser (B) adopts the power output in the unit are unit solid angle to estimate:
B=P/(π
2*BPP
f*BPP
s)
Conventional method of geometrical optics by light beam cutting, the mode of resetting, reduces the BPP value of slow-axis direction, and the BPP value of quick shaft direction increases, and realizes that both direction BPP value is equal, makes diagonal BPP value minimum.But on duty the amassing of the BPP of its two direction do not reduce, so the brightness of semiconductor laser does not improve in fact.
Adopt polarization coupling and wavelength to close bundle and can improve to a certain extent the brightness of semiconductor laser Output of laser, but because polarization coupling can only improve 2 times, and wavelength closes the number of wavelengths that bundle can be coupled and is subject to the plated film restriction, close bundle quantity and generally be no more than 5, the multiple that therefore can improve brightness is no more than 10 times.
Realize that by the exocoel feedback spectrum closes bundle, brightness that can the Effective Raise semiconductor laser, it is not increasing under the BPP value condition of quick shaft direction, reduce slow-axis direction BPP value, the method is at US Patent No. 7065107B2, US6192062B1, US6208679 and notification number are CN102208753A, it is all on the books that name is called the domestic patent of " external cavity semiconductor laser with multi-wavelength combination ", but these spectrum close Shu Fangfa all for single laser array or array, perhaps grating is corresponding with single semiconductor laser module, the grating utilance that involves great expense is low, the semiconductor laser that perhaps forms laser module is the commaterial type, the laser cell number of beams that can be coupled is limited, and when in power requirement and the demanding occasion of beam quality, can not satisfy instructions for use.In addition, adopt a plurality of semiconductor laser array spectrum to close bundle, the corresponding need adopted a plurality of gratings, so that the cost of whole system is high, a plurality of mutual incoherent light paths are also so that level of integrated system is low.
The problem of above-mentioned existence needs further to improve.
Summary of the invention
In order to realize super brightness, high-power semiconductor laser output, the invention provides a kind of monochromatic light grid exocoel feedback of utilizing and realize that multiple semiconductor swashs the device and method of combiner, solve existing spectrum and close Shu Fangfa all for single laser array or array, perhaps grating is corresponding with single semiconductor laser module, and the grating utilance that involves great expense is low; The semiconductor laser that perhaps forms laser module is the commaterial type, and the laser cell number of beams that can be coupled is limited, and can not satisfy instructions for use; And adopt a plurality of semiconductor laser array spectrum to close bundle, and corresponding the need adopted a plurality of gratings, so that the cost of whole system is high, a plurality of mutual incoherent light paths are also so that the low problem of level of integrated system.
The present invention has specifically proposed the single grating of a kind of employing, feed back by exocoel, realize that a plurality of semiconductor lasers close and restraint into two-beam, realize that in conjunction with polarization coupling the monochromatic light grid exocoel feedback of utilizing of super brightness, the output of high power single laser beam realizes that multiple semiconductor swashs the device and method of combiner again, the related device of the method comprises: semiconductor laser module, field lens, grating, the anti-sight glass of exocoel, half-wave plate, speculum group, polarization splitting prism, the anti-sight glass of its semiconductor laser module and exocoel forms respectively two laser oscillation cavities, wherein:
Semiconductor laser module is comprised of semiconductor laser, fast axis collimation mirror and slow axis collimating mirror;
The unit light beam incides the direction of vibration of grating and polarization direction that grating requires is complementary;
The position relationship of semiconductor laser module, field lens and grating satisfies: semiconductor laser module and grating lay respectively at the place, focal plane, front and back of field lens;
Forming semiconductor laser module semiconductor laser wherein is a plurality of laser single tubes (emitter) combinations, or be laser array (bar), or the laser linear array that is comprised of laser array or battle array repeatedly, or a plurality of laser linear array or the combination that changes gust;
Form semiconductor laser module, the chamber facial mask reflectivity of semiconductor laser Output of laser one end wherein＜0.5%, the chamber facial mask reflectivity of the other end〉95%, the degree of polarization of this semiconductor laser outgoing laser beam〉95%;
The material gain wavelength of semiconductor laser covers all energy excitation wavelengths of semiconductor laser, comprises that from ultraviolet to infrared, its arrangement mode closes the Shu Fangxiang monotone variation along spectrum; When semiconductor laser was a plurality of laser cell combination, the laser cell material was identical or different each other.
Grating is transmission or reflective, only has 1 order diffraction or only has-1 order diffraction, diffraction efficiency〉90%, and have high damage threshold, reach 10KW/cm
2Magnitude;
The anti-sight glass of exocoel is partially reflecting mirror, and reflectivity is 5%-15%, and the transmission direction of the diffraction light that produces with grating is vertical;
Half-wave plate and polarization splitting prism are wide wavestrip element, and it uses spectral region greater than the spectral width of exocoel feedback mirrors outgoing laser beam, and has high damage threshold, requires under the laser continuous operation mode, greater than 10KW/cm
2
A kind of monochromatic light grid exocoel feedback of utilizing realizes that multiple semiconductor swashs the method for combiner: adopt single grating, feed back by exocoel, realize that a plurality of semiconductor lasers close and restraint into two-beam, realize that in conjunction with polarization coupling the semiconductor laser of super brightness, the output of high power single laser beam closes bundle, is specially again:
A, two identical semiconductor laser module symmetries are placed on grating normal OP both sides, if each laser module is exported respectively 3 bunch polarization unit light beams, after the field lens effect, the unit light beam incides on the grating with the angle of monotone variation, and overlaps at grating;
B, by the angle dispersion of grating and the feedback effect of the anti-sight glass of exocoel, so that the wavelength X of the unit laser beam of starting of oscillation
1, λ
2, λ
3Different, and close the Shu Fangxiang monotone variation along spectrum, so identical with the unit light beam from the anti-sight glass of exocoel output two light beams quality, spectrum consistent, power improves 3 times linearly polarized laser bundle, wherein light beam is realized polarization coupling with the light beam of process speculum group effect by polarization splitting prism through 90 ° of half-wave plate effect after vibration direction upsets;
C, the method can expand to closes Shu Fangxiang at spectrum and adopts more multiple semiconductor laser module, these semiconductor laser modules close on the Shu Fangxiang at spectrum and arrange in the mode of material gain wavelength monotone variation, by closing the more unit of bundle light beam, realize the more Laser output of high brightness.
The invention has the advantages that: the present invention is easy to realize super brightness, high power laser light output, penetrates different wavelength as long as employed laser cell can swash, and all can realize closing bundle in this cavity in theory; The beam quality of outgoing laser beam of the present invention and unit laser beam are consistent, and power is the summation of unit laser beam, so its brightness can realize improving widely; The integrated degree of the present invention is high, because all light paths are all closed by single grating and restrainted into two-beam, effectively stack under unit light path permanence condition, can reduce whole device size between the unit light path; The grating quantity that the present invention uses is few.
Description of drawings
Fig. 1 is that the present invention utilizes monochromatic light grid exocoel feedback to realize that multiple semiconductor swashs the schematic diagram of combiner.
Fig. 2 is expansion schematic diagram of the present invention.
Fig. 3 is semiconductor laser module structural representation of the present invention.
Fig. 4 is that the present invention closes the bundle process and can expand to a plurality of semiconductor laser modules and close the bundle schematic diagram.
The figure number implication: 1,1 ', N1, NN, N1 ', NN '. semiconductor laser module; 11,12,13,11 ', 12 ', 13 '. the unit light beam of semiconductor laser module output; 14. semiconductor laser; 15. fast axis collimation mirror; 16. slow axis collimating mirror; 2,2 ', 21,2N, 21 ', 2N '. field lens; 3. grating; 4,4 '. the anti-sight glass of exocoel; 5. half-wave plate, 61,62. speculum, 7. polarization splitting prisms, 8,8 ', 8N, 8N '. polarized laser beam, 9,9N. polarization coupling output beam, among the figure at semiconductor laser module 1,1 ', N1, single arrow that NN, N1 ', NN ' locate represents that spectrum closes Shu Fangxiang.
Embodiment
Such as accompanying drawing 1 to shown in the accompanying drawing 4, the present invention utilizes monochromatic light grid exocoel feedback to realize that multiple semiconductor swashs the device of combiner, by semiconductor laser module 1,1 ' with the anti-sight glass 4 of exocoel, 4 ' forms respectively two laser oscillation cavities, realize closing bundle by same diffraction grating 3, two bunch polarized laser beam 8,8 ' output that acquisition power raising several times, beam quality equate with the beam quality of unit light beam, then realize single beam output by polarization coupling, finally realize 9 outputs of high-power and high-lighting beam quality polarization coupling output beam.
Utilize monochromatic light grid exocoel feedback to realize that the process of the sharp combiner of multiple semiconductor realizes closing bundle with two semiconductor laser modules and describes: two identical semiconductor laser modules 1,1 ' symmetry is placed on grating 3 normal OP both sides, if each semiconductor laser module 1,1 ' exports respectively 3 bunch polarization unit light beams 11,12,13 and 11 ', 12 ', 13 ', after field lens 2,2 ' effect, the unit light beam incides on the grating 3 with the angle of monotone variation, and in grating 3 coincidences, by the angle dispersion of grating 3 and the feedback effect of the anti-sight glass 4,4 ' of exocoel, so that the unit laser beam 11 of starting of oscillation, 12,13 and 11 ', 12 ', 13 ' wavelength X
1, λ
2, λ
3Different, and close the Shu Fangxiang monotone variation along spectrum.So from the anti-sight glass 4 of exocoel, 4 ' output two light beams quality is identical with the unit light beam, spectrum consistent, power improves 3 times linearly polarized laser bundle 8 and 8 ', then wherein a branch of light beam 8 overturns 90 ° through half-wave plate 5 effect after vibration directions, with process speculum group 61, the light beam 8 ' of 62 effects is realized polarization coupling by polarization splitting prism 7, final output beam quality is identical with the unit light beam, and power improves 6 times polarization coupling output beam 9.
If the grating cycle is Λ, the optical grating diffraction level is inferior to be 1 grade, and the incidence angle of unit laser beam 11,12,13 on grating is respectively θ
1, θ
2, θ
3(θ
1＜θ
2＜θ
3), through the feedback effect of grating dispersion and the anti-sight glass of exocoel, realize that it is θ that the laser beam that vibrates has the identical angle of diffraction, then the output wavelength wavelength of unit light beam is respectively λ
1, λ
2, λ
3Satisfy following relationship:
Λ*（sinθ
1+sinθ）=λ
1；
Λ*（sinθ
2+sinθ）=λ
2；
Λ*（sinθ
3+sinθ）=λ
3；
The excitation wavelength λ of laser cell then
1, λ
2, λ
3Also monotone variation: λ
1＜λ
2＜λ
3
Take centre wavelength as 980nm, the semiconductor laser array that comprises 19 luminous points is example, spectrum closes the slow-axis direction that Shu Fangxiang is laser array, pass through the spectral distribution of exocoel feedback mirrors output beam as shown in Figure 2, along laser array slow-axis direction unit excitation wavelength monotonic increase.Adopt 2 identical laser arrays through the above-mentioned bundle that closes, power output can improve nearly 38 times, and beam quality only is the beam quality of single luminous point, and then its brightness also improves nearly 38 times.
Semiconductor laser module 1 is comprised of semiconductor laser 14, fast axis collimation mirror 15 and slow axis collimating mirror 16, as shown in Figure 3, wherein 14 of semiconductor laser gain wavelength comprises from ultraviolet to infrared all energy excitation wavelengths, the chamber face plating anti-reflection film of Laser output direction, its reflectivity＜0.5%, another chamber face plating high-reflecting film, its reflectivity〉95%.
Semiconductor laser module 1,1 ', the position relationship of field lens 2,2 ' and grating 3 satisfies: semiconductor laser module 1,1 ' and grating 3 lay respectively at field lens 2,2 ' place, focal plane, front and back.
The above-mentioned bundle process of closing can expand to a plurality of semiconductor laser modules and closes bundle, as shown in Figure 4, place a plurality of semiconductor laser module N1 in grating normal bilateral symmetry, NN, N1 ', NN ' and corresponding field lens 21 with it, 2N, 21 ', 2N ', wherein the semiconductor laser module arrangement mode closes the arrangement of Shu Fangxiang monotone variation according to its material gain wavelength along spectrum, overlap at grating 3 after the light beam process field lens effect of semiconductor laser module output, again by the anti-sight glass 4 of exocoel, 4 ' feedback effect, only can could form feedback along the light beam that light path turns back to semiconductor laser module, in conjunction with the dispersion characteristics of grating, then so that the semiconductor laser module output wavelength is closed the Shu Fangxiang monotone variation along spectrum.Restraint polarized laser beam 8N, 8N ' through behind the polarization coupling in two of the anti-sight glass 4 of exocoel, 4 ' output, form single beam 9N output, output spectrum is the stack λ of unit laser beam wavelength
1, λ
2λ
M-1, λ
MIf adopt 2 groups of each 5 semiconductor laser arrays, each laser array is comprised of 19 luminous points, and then the brightness of output can improve nearly 190 times.
Claims (8)
1. one kind is utilized monochromatic light grid exocoel feedback to realize that multiple semiconductor swashs the device of combiner, is characterized in that comprising: semiconductor laser module (1,1 '), field lens (2,2 '), grating (3), the anti-sight glass of exocoel (4,4 '), half-wave plate (5), speculum group (61,62), polarization splitting prism (7), its semiconductor laser module (1,1 ') form respectively two laser oscillation cavities with the anti-sight glass of exocoel (4,4 '), wherein:
Semiconductor laser module (1,1 ') is comprised of semiconductor laser (14), fast axis collimation mirror (15) and slow axis collimating mirror (16);
The unit light beam incides the direction of vibration of grating (3) and the polarization direction of grating (3) requirement is complementary;
The position relationship of semiconductor laser module (1,1 '), field lens (2,2 ') and grating (3) satisfies: semiconductor laser module (1,1 ') and grating (3) lay respectively at the place, focal plane, front and back of field lens (2,2 ').
2. the monochromatic light grid exocoel feedback of utilizing according to claim 1 realizes that multiple semiconductor swashs the device of combiner, it is characterized in that: semiconductor laser (14) is a plurality of laser single tube combinations, or be laser array, or the laser linear array that is formed by laser array or battle array repeatedly, or a plurality of laser linear array or the repeatedly combination of battle array.
3. the monochromatic light grid exocoel feedback of utilizing according to claim 1 realizes that multiple semiconductor swashs the device of combiner, is characterized in that: the chamber facial mask reflectivity of semiconductor laser (14) Output of laser one end＜0.5%, the chamber facial mask reflectivity of the other end〉95%; The degree of polarization of this semiconductor laser (14) outgoing laser beam〉95%.
4. the monochromatic light grid exocoel feedback of utilizing according to claim 1 realizes that multiple semiconductor swashs the device of combiner, it is characterized in that: the material gain wavelength of semiconductor laser (14) covers all energy excitation wavelengths of semiconductor laser, comprise that from ultraviolet to infrared, its arrangement mode closes the Shu Fangxiang monotone variation along spectrum; When semiconductor laser (14) was a plurality of laser cell combination, the laser cell material was identical or different each other.
5. the monochromatic light grid exocoel feedback of utilizing according to claim 1 realizes that multiple semiconductor swashs the device of combiner, it is characterized in that: grating (3) is transmission or reflective, only has 1 order diffraction or only has-1 order diffraction, diffraction efficiency〉90%, and have high damage threshold, reach 10KW/cm
2Magnitude.
6. described drive utilizes monochromatic light grid exocoel feedback to realize that multiple semiconductor swashs the device of combiner according to claim 1, it is characterized in that: the anti-sight glass (4 of exocoel, 4 ') be partially reflecting mirror, reflectivity is 5% ~ 15%, and the transmission direction of the diffraction light that produces with grating (3) is vertical.
7. the monochromatic light grid exocoel feedback of utilizing according to claim 1 realizes that multiple semiconductor swashs the device of combiner, it is characterized in that: half-wave plate (5) and polarization splitting prism (7) are wide wavestrip element, it uses spectral region greater than exocoel feedback mirrors (4,4 ') the output polarization laser beam (8,8 ') spectral width, and have high damage threshold, require under the laser continuous operation mode, greater than 10KW/cm
2
8. one kind is utilized monochromatic light grid exocoel feedback to realize that multiple semiconductor swashs the method for combiner, is characterized in that:
Adopt single grating, by exocoel feedback, realize that a plurality of semiconductor lasers close to restraint into two-beam, realize that in conjunction with polarization coupling the semiconductor laser of super brightness, the output of high power single laser beam closes bundle, is specially again:
A, two identical semiconductor laser modules (1,1 ') symmetry is placed on grating (3) normal OP both sides, establishes each laser module (1,1 ') and exports respectively 3 bunch polarization unit light beams (11,12,13 and 11 ', 12 ', 13 '), through field lens (2,2 ') after the effect, the unit light beam incides on the grating (3) with the angle of monotone variation, and overlaps at grating (3);
B, by the angle dispersion of grating (3) and the feedback effect of the anti-sight glass of exocoel (4,4 '), so that the wavelength X of the unit laser beam of starting of oscillation (11,12,13 and 11 ', 12 ', 13 ')
1, λ
2, λ
3Different, and close the Shu Fangxiang monotone variation along spectrum, so from the anti-sight glass (4 of exocoel, 4 ') output two light beams quality is identical with the unit light beam, spectrum consistent, power improves 3 times linearly polarized laser bundle (8 and 8 '), wherein light beam (8) is through 90 ° of half-wave plate (5) effect after vibration direction upsets, pass through polarization splitting prism (7) realization polarization coupling with the polarization coupling output beam (9 ') through speculum group (61,62) effect;
C, the method can expand to closes Shu Fangxiang at spectrum and adopts more multiple semiconductor laser module, these semiconductor laser modules close on the Shu Fangxiang at spectrum and arrange in the mode of material gain wavelength monotone variation, by closing the more unit of bundle light beam, realize the more Laser output of high brightness.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107589549A (en) * | 2017-10-19 | 2018-01-16 | 四川思创优光科技有限公司 | Optical fiber laser synthesizer |
| CN108886232A (en) * | 2015-12-25 | 2018-11-23 | 鸿海精密工业股份有限公司 | Harness light source and harness irradiation unit and laser-stripping method |
| WO2020117286A1 (en) * | 2018-12-06 | 2020-06-11 | Didi Research America, Llc | Transmitter having a light modulator for light detection and ranging (lidar) |
| CN114243452A (en) * | 2022-02-24 | 2022-03-25 | 深圳市星汉激光科技股份有限公司 | Interlocking light path of semiconductor laser |
| CN114498294A (en) * | 2022-01-25 | 2022-05-13 | 中国工程物理研究院应用电子学研究所 | Semiconductor laser and optical fiber coupling structure using grating to form external cavity resonance |
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| US6208679B1 (en) * | 1998-09-08 | 2001-03-27 | Massachusetts Institute Of Technology | High-power multi-wavelength external cavity laser |
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|---|---|---|---|---|
| CN108886232A (en) * | 2015-12-25 | 2018-11-23 | 鸿海精密工业股份有限公司 | Harness light source and harness irradiation unit and laser-stripping method |
| CN107589549A (en) * | 2017-10-19 | 2018-01-16 | 四川思创优光科技有限公司 | Optical fiber laser synthesizer |
| CN107589549B (en) * | 2017-10-19 | 2023-10-27 | 四川思创激光科技有限公司 | Fiber laser synthesizer |
| WO2020117286A1 (en) * | 2018-12-06 | 2020-06-11 | Didi Research America, Llc | Transmitter having a light modulator for light detection and ranging (lidar) |
| US11086058B2 (en) | 2018-12-06 | 2021-08-10 | Beijing Voyager Technology Co., Ltd | Transmitter having a light modulator for light detection and ranging (LIDAR) |
| CN114498294A (en) * | 2022-01-25 | 2022-05-13 | 中国工程物理研究院应用电子学研究所 | Semiconductor laser and optical fiber coupling structure using grating to form external cavity resonance |
| CN114243452A (en) * | 2022-02-24 | 2022-03-25 | 深圳市星汉激光科技股份有限公司 | Interlocking light path of semiconductor laser |
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