CN102761260A - Low-voltage driven booster circuit and relative method - Google Patents
Low-voltage driven booster circuit and relative method Download PDFInfo
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- CN102761260A CN102761260A CN2011101185764A CN201110118576A CN102761260A CN 102761260 A CN102761260 A CN 102761260A CN 2011101185764 A CN2011101185764 A CN 2011101185764A CN 201110118576 A CN201110118576 A CN 201110118576A CN 102761260 A CN102761260 A CN 102761260A
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Abstract
The invention relates to a low-voltage driven booster circuit and a relative method. The booster circuit comprises an inductor, a diode, a capacitor, a first switch and a second switch. The second switch is coupled between the first switch and the anode of the diode. The first switch is selectively switched on according to a switching signal, and the second switch is switched along with the switching-on of the first switch.
Description
Technical field
The invention relates to a kind of booster circuit and correlation technique of low-voltage driving, and particularly can use the low-voltage driving booster circuit and the correlation technique of low-voltage switches signal controlling relevant for a kind of setting repeatedly connects switching transistor.
Background technology
Booster circuit is a higher direct voltage in order to a lower direct voltage is raise, and is widely used in the high-tension application of various needs.
Please with reference to Fig. 1, it has illustrated a known booster circuit 10.Booster circuit 10 is provided with an inductance L 0, a diode D0, a transistor M0 and a capacitor C 0, in order to direct voltage Vi that will be lower boost into node nd4 than High Level DC Voltage Vo.Transistor M0 is a switching transistor, and its grid is controlled by a switching signal sw1, according to optionally conducting between node nd3 and ground terminal voltage GND of switching signal sw1.Fig. 1 has also illustrated the waveform sequential of switching signal sw1, and its transverse axis is the time, and the longitudinal axis is the voltage of signals size.Switching signal sw1 can according to periodically oxide-semiconductor control transistors M0 of one-period T; In each cycle T, switching signal sw1 makes transistor M0 conducting with voltage Vi0 in period Ton, and all the other times then make transistor M0 close not conducting with ground terminal voltage GND.
When transistor M0 conducting, node nd3 is switched on the terminal voltage GND to ground, and voltage Vi can charge into magnetic energy in inductance L 0.When switching signal sw1 closes transistor M0 and during stop conducting, the magnetic energy of inductance L 0 just can be released into capacitor C 0 via the diode D0 of forward conducting, to support making voltage Vo be able to be higher than voltage Vi by voltage Vo at node nd4.Ratio between the ratio of period Ton and cycle T (being the so-called work period, duty cycle) may command voltage Vo and voltage Vi; The time length of period Ton is more near cycle T, and Vo is just high more for control voltage.For example, voltage Vi can be 12 volts; Via the work week control of switching signal sw1, voltage Vo can be 60 volts.
But, when not conducting of transistor M0, the voltage of node nd3 can be that the cross-pressure of diode D0 adds voltage Vo, makes transistor M0 will surpass voltage Vo at the drain voltage of node nd3; At this moment, because the drain voltage of transistor M0 and grid voltage are equal to ground terminal voltage GND, so each interpolar of transistor M0 need bear very big voltage differences.Therefore, transistor M0 must be one and has high voltage-rated (voltage rating), can tolerate high-tension power transistor.Yet when high specified transistor M0 will be driven conducting, its limit voltage was also higher.Be the higher limit voltage in response to transistor M0, switching signal sw1 also need just be enough to make transistor M0 conducting with higher voltage Vi0 in period Ton.For example, in voltage Vi and Vo were respectively 12 and 60 volts application, the limit voltage of transistor M0 can be 5 volts or higher.
Booster circuit 10 can be arranged in pairs or groups a control chip 14 to control the size of voltage Vo; Control chip 14 can be adjusted the work period (with frequency) of switching signal sw1, controls voltage Vo by this.Yet, because the required voltage Vi0 of switching signal sw1 has surpassed the signal voltage that control chip 14 can be exported, so control chip 14 can't directly be controlled booster circuit 10.In 14 switching signal sw0 that can export of control chip, its signal magnitude can only change between voltage VH and GND, but voltage VH does not surmount the limit voltage of transistor M0, and deficiency is so that transistor M0 conducting.
Therefore, the known booster circuit 10 potential displacement device 12 of also need arranging in pairs or groups.Potential displacement device 12 operates between voltage Vi0 and the ground terminal voltage GND, is provided with resistance R p1, Rp2 and Rp3 and transistor Q1, Q2 and Q3, converts the high-voltage switch signal sw1 of node nd2 into the low-voltage switches signal sw0 with node nd1.Via the running of potential displacement device 12, switching signal sw1 could come turn-on transistor M0 with higher voltage Vi0 (being higher than voltage VH).For example; For at voltage Vo being has enough specifiedly in 60 volts the application, transistor M0 limit voltage can increase to more than 5 volts, but in the switching signal sw0 of control chip 14 outputs; Voltage VH has only 3 volts, is not enough to direct driving transistors M0.Hereat, known technology need use potential displacement device 12, is promoted to 12 volts with the voltage Vi0 with switching signal sw1.
Because known booster circuit 10 needs collocation potential displacement device 12, so the known pressure build-up technique of Fig. 1 need be used more circuit element, take bigger circuit area, also increase the cost of pressure build-up technique.Moreover more circuit element can cause the reaction time slack-off because of the resistance capacitance late effect; When switching signal sw0 input potential displacement device 12, the rising edge of a pulse of the switching signal sw1 that produces in output will so postpone with trailing edge, influences the response speed of switching signal sw1, and it can't be switched between voltage Vi0 and GND apace; Jointly, cycle T can't shorten, and the frequency of switching signal sw1 also just can't improve.
In pressure build-up technique, carry out the high frequency switching with high-frequency switching signal driving switch transistor and can bring many advantages with inductance collocation switching transistor; For example, the size of inductance can be reduced, and electromagnetic interference (EMI) can reduce, and the efficient of energy utilization also can promote.Yet the known pressure build-up technique of Fig. 1 can't be suitable for high frequency and switch.Preferable switching signal frequency is about MHz, but the switching signal frequency of Fig. 1 known technology can only reach tens of thousand hertz.
Moreover when transistor M0 switched in conducting and between closing, the change in voltage situation of node nd3 was unfavorable for that also high frequency switches.Between the grid of transistor M0 and drain electrode, parasitic capacitor C gd is arranged, as shown in Figure 1.When transistor M0 conducting, at the two ends of capacitor C gd, the voltage of node nd2 and nd3 is respectively voltage Vi0 and voltage GND; When not conducting of transistor M0, the voltage transition of node nd2 is voltage GND, and the voltage of node nd3 then will be converted to above voltage Vo.For example, in Vo was 60 volts example, when transistor M0 is switched to when closing by conducting, the voltage of node nd3 will be increased to above 60 volts by 0 volt of ground terminal voltage GND.That is to say that when transistor M0 switched, the voltage difference between node nd2 and nd3 had violent variation; Switching signal sw1 need expend the long time and capacitor C gd is discharged and recharged just can reach this and change, and then the switching of reaching driving transistors M0.This also becomes one of reason that known pressure build-up technique can't high frequency switches.
Summary of the invention
The present invention provides a kind of booster circuit and correlation technique, improving the shortcoming of known technology, realizes the pressure build-up technique that circuit is simplified, can high frequency be switched.
The purpose of this invention is to provide a kind of booster circuit, be provided with an inductance, a diode, an electric capacity, one first switch and a second switch with low-voltage driving.Inductance is coupled between one first voltage and the first node, and the anode of diode and negative electrode couple a first node and a Section Point respectively.Electric capacity couples Section Point.First switch can comprise a first transistor, has first drain electrode, first source electrode and first grid, couples a first passage end, a second channel end and one first control end of first switch respectively.First control end couples a switching signal, and first switch is according to optionally conducting between first passage end and second channel end of switching signal.Second switch can comprise a transistor seconds, has second drain electrode, second source electrode and second grid, couples a third channel end, a four-way end and one second control end of second switch respectively.End of the third channel, the fourth channel control terminal and the second terminal coupled to the first node, respectively, the first end and a second channel Shu voltage.When first switch between first passage end and second channel end during conducting, second switch conducting between third channel end and four-way end; When first switch stops at conducting between first passage end and second channel end, second switch stops at conducting between third channel end and four-way end.
Second voltage can be a direct current voltage, and can equal first voltage.When the cross-pressure between the first grid and first source electrode during greater than one first limit voltage, the first transistor conducting between first drain electrode and first source electrode.When the cross-pressure between the second grid and second source electrode during greater than one second limit voltage, transistor seconds conducting between second drain electrode and second source electrode.When first switch stopped between first passage end and second channel end conducting, second switch made the voltage of first passage end less than second voltage.Therefore, the first transistor can be the transistor of low specified, low limit voltage, that is first limit voltage can be less than second limit voltage.So the first transistor can directly be controlled by the low-voltage switches signal of control chip.
Cooperate control chip, can set up a voltage detecting circuit and/or a current detection circuit in the booster circuit.Voltage detecting circuit provides a voltage detection signal according to the voltage of Section Point in a dividing potential drop node.For example, one first resistance and one second resistance can be set in the voltage detecting circuit, first resistance is coupled between Section Point and the dividing potential drop node, and second resistance is coupled between dividing potential drop node and the ground terminal voltage.Current detection circuit is coupled to first switch, according to the electric current of second channel end one current detection signal is provided; For example, current detection circuit can be provided with a resistance, is coupled between a second channel end and the ground terminal voltage, make the size of current of second channel end be associated with the voltage of second channel end, and the voltage of second channel end promptly can be used as current detection signal.Voltage detection signal and current detection signal can transfer to control chip, let control chip adjust the sequential (like work period and/or frequency) of switching signal according to this, with the output voltage of FEEDBACK CONTROL booster circuit in Section Point.
Another purpose of the present invention provides a kind of method with low voltage control/driving one booster circuit.Booster circuit receives one first voltage so that an output voltage to be provided, and is provided with a transistor seconds, and this transistor seconds has a second grid and one second source electrode.And this method comprises: a first transistor is provided, and it has a first grid and one first drain electrode, and first drain electrode couples second source electrode; And, provide a low tension switch signal to first grid with chip, with conducting the first transistor optionally; When switching signal makes the first transistor and this not conducting of transistor seconds, cause output voltage to be higher than first voltage.Moreover, make second grid be coupled to one second voltage, second voltage can be a direct current voltage, can also equal first voltage.For carrying out FEEDBACK CONTROL, a voltage detecting circuit can be provided, couple the Section Point that booster circuit provides output voltage, according to output voltage one voltage detection signal is provided, and receives this voltage detection signal with chip.And/or, a current detection circuit is provided, couple the first transistor, the electric current of foundation first drain electrode provides a current detection signal, and with chip received current detection signal.
For there is better understanding above-mentioned and other aspects of the present invention, hereinafter is special lifts preferred embodiment, and conjunction with figs., elaborates as follows:
Description of drawings
Fig. 1 has illustrated a known booster circuit.
Fig. 2 is the booster circuit according to one embodiment of the invention.
Fig. 3 is the booster circuit according to another embodiment of the present invention.
The main element symbol description
10,20,30: booster circuit
12: the potential displacement device
14,36: chip
22,24: switch
32: voltage detecting circuit
34: current detection circuit
Vi0, Vi, Vi2, Vo, VH, GND, Vn4, Vn5: voltage
Nd1-nd4, n1-n5: node
Q1-Q3, M0-M2: transistor
D0, D: diode
C0, C, Cc, Cgd: electric capacity
L0, L: inductance
Rp1-Rp3, R1-R3: resistance
Sw0-sw1, sw: switching signal
Ton: period
T: cycle
Embodiment
Please refer to Fig. 2, what it was illustrated is the booster circuit 20 according to one embodiment of the invention.Booster circuit 20 draws voltage Vi and in node n2 one output voltage V o is provided.Booster circuit 20 is provided with an inductance L, a diode D, a capacitor C and two switches 22 and 24.
In booster circuit 20, inductance L is coupled between voltage Vi and the node n1.Diode D can be a Schottky diode (Schottky diode), and its anode and negative electrode couple node n1 and node n2 respectively.Capacitor C is coupled between node n2 and the ground terminal voltage GND.Switch 22 can use transistor M1 to realize; Transistor M1 can be a n passage MOS transistor; Its drain electrode, source electrode and grid are as two tunnel ends and a control end of switch 22; Couple node n3, n4 and switching signal sw respectively, make switch 22 be able to optionally conducting between node n3 and n4 according to switching signal sw.Another switch 24 can use transistor M2 to realize; Transistor M2 can be a n passage MOS transistor, and its drain electrode, source electrode and grid are two tunnel ends and a control end of switch 24, couples node n1, n3 and a voltage Vi2 respectively.Voltage Vi2 can be a direct current voltage; In one embodiment, voltage Vi2 can equal voltage Vi.
In one embodiment, transistor M1 can be the transistor that a rated voltage is lower, area is less, limit voltage is lower; Transistor M2 can be the power transistor that a rated voltage is higher, limit voltage is bigger.Because the limit voltage of transistor M1 is lower, can directly control its conducting with the switching signal of low-voltage.
The running of booster circuit 20 can be described below.Transistor M1 is controlled by switching signal sw; When switching signal sw made transistor M1 conducting, transistor M1 was with the ground terminal voltage GND of node n3 conducting to node n4.As far as transistor M2; Its source electrode is switched on the terminal voltage GND to ground in the voltage of node n3; But its grid is kept voltage Vi2; So cross-pressure is enough to surmount the limit voltage of transistor M2 between its grid and source electrode, makes transistor M2 also with transistor M1 conducting, with node n1 conducting to ground terminal voltage GND.So, voltage Vi will charge into magnetic energy in inductance L.
When switching signal sw makes transistor M1 close not conducting, node n3 no longer conducting in ground terminal voltage GND.Transistor M2 can rise the voltage of node n3 to node n3 charging; Along with the voltage rising of node n3, cross-pressure also can reduce gradually between the grid of transistor M2 and source electrode.Cross-pressure is less than the limit voltage of transistor M2 when between the grid of transistor M2 and source electrode, and transistor M2 will close and stop conducting.So, the magnetic energy in the inductance L just can discharge via diode D, to support voltage Vo at node n2, reaches the purpose of boosting.
In one embodiment, voltage Vi and Vi2 can equal 12 volts; Cooperate the work period of switching signal sw to set, voltage Vo then can be up to 60 volts.Therefore, transistor M2 can be the power transistor of a high voltage-rated, is enough to bear the high voltage of node n1.As far as transistor M2, when transistor M1 with node n3 conducting to ground during terminal voltage GND, the grid voltage Vi2 of transistor M2 (as 12 volts) is enough to surmount the limit voltage (for example being 5 volts) of transistor M2, makes the transistor M2 can be by conducting smoothly.
Moreover because transistor M1 repeatedly is connected under the source electrode of transistor M2, transistor M1 needn't bear the high voltage of voltage Vo in the drain electrode of node n3.When transistor M2 and not conducting of M1, the voltage of node n3 can be lower than voltage Vi2 (as 12 volts), so transistor M1 needs not be high specified power transistor; Transistor M1 can be little, a low specified transistor of area, so its limit voltage is also lower.Because the limit voltage of transistor M1 is lower, thus can be directly with its conducting of switching signal sw control of low-voltage.For example, switching signal sw can be the signal of directly being exported by control chip; For example, switching signal sw is the signal that between 0 volt and 3 volts, switches.So, the running that control chip just can be directly boosts via the transistor M2 Combination Control of the transistor M1 of low-voltage driving and high drive does not need could control via circuit such as potential displacement devices the running of booster circuit.
Because pressure build-up technique of the present invention can no longer need the potential displacement device, switch so can use high frequency, let booster circuit 20 be able to embody the various advantages that high frequency switches.Moreover, the realization that the circuit framework design of booster circuit of the present invention also helps high frequency to switch.When transistor M1 is switched to when closing by conducting, its drain voltage at node n3 can not be higher than voltage Vi2 (as 12 volts), much smaller than voltage Vo (as 60 volts).That is to say that when transistor M1 switched in conducting and between closing, the variation of its drain voltage was little.Therefore, as far as transistor M1, the Miller effect on its grid drain electrode parasitic capacitance (Miller effect) can alleviate; Switching signal sw can accomplish necessary discharging and recharging to the grid drain electrode parasitic capacitance of transistor M1 apace, transistor M1 can be switched in conducting and between closing apace, and then realize boosting of high frequency switching.
Please refer to Fig. 3, it is the booster circuit 30 according to another embodiment of the present invention.Booster circuit 30 can directly be controlled by a chip 36; Chip 36 can be a control chip or chip for driving.Similar Fig. 2 booster circuit 20, booster circuit 30 are provided with inductance L, diode D, capacitor C and as the transistor M1 and the M2 of switch, the voltage Vo of output are provided to draw voltage Vi; The running of boosting of booster circuit 30 can be analogized and got by the principle of booster circuit 20, repeats no more in this.
As shown in Figure 3, booster circuit 30 directly is controlled by the switching signal sw that chip 36 is exported.Be the control that cooperates 36 pairs of chips to boost and operate, booster circuit 30 can be provided with a voltage detecting circuit 32 and a current detection circuit 34.Voltage detecting circuit 32 provides a voltage detection signal according to voltage Vo, with the size of response voltage Vo.In the embodiments of figure 3, voltage detecting circuit 32 is provided with two resistance R 1, R2 and a capacitor C c; Resistance R 1 is coupled between node n2 and the n5, and resistance R 2 is coupled between node n5 and the ground terminal voltage GND, and capacitor C c also is coupled between node n5 and the ground terminal voltage GND.Node n5 between resistance R 1 and R2 can be considered a dividing potential drop node, and both are to voltage Vo dividing potential drop, and the voltage Vn5 of node n5 just can be used as a voltage detection signal, with the voltage swing of response voltage Vo.Voltage Vn5 can transfer to chip 36, with the foundation as FEEDBACK CONTROL; Capacitor C c is then in order to keep the stability of reponse system.
According to voltage detection signal and the current detection signal of voltage Vn5 and Vn4, chip 36 can be adjusted the sequential (like work week and/or frequency) of switching signal sw according to this, by this running of boosting (like the size of voltage Vo) of FEEDBACK CONTROL booster circuit 30.
In summary; Compared to known booster circuit and pressure build-up technique; The framework that booster circuit of the present invention adopts double switching transistor repeatedly to connect so booster circuit of the present invention can directly be controlled by the switching signal of chip, can not only be saved the cost and the circuit area of the running of boosting; Can also improve the boosted switch frequency, realize that high frequency switches.Pressure build-up technique of the present invention is applicable to the high-tension application of various needs, the light emitting diode string (LED string) of for example saying so and being used for driving display floater.
In sum, though the present invention discloses as above with preferred embodiment, so it is not in order to limit the present invention.Have common knowledge the knowledgeable in the technical field under the present invention, do not breaking away from the spirit and scope of the present invention, when doing various changes and retouching.Therefore, protection scope of the present invention is as the criterion when being defined by claims.
Claims (16)
1. booster circuit with low-voltage driving comprises:
One inductance is coupled between one first voltage and the first node;
One diode has an anode and a negative electrode, and this anode couples this first node, and this negative electrode couples a Section Point;
One electric capacity couples this Section Point;
One first switch has a first passage end, a second channel end and one first control end; This first control end couples a switching signal, and this first switch is according to the optionally conducting between this first passage end and this second channel end of this switching signal;
A second switch having a third channel end, a fourth passage and a second control terminal side, respectively, coupled to the first node, the second Shu passage and a second voltage terminal, wherein when the first opening on the first channel and the second end of the conduction between the end of the tunnel, the second opening on the end of the third passage, and the conduction between the fourth channel end; when the first switch to stop the end of the first channel the second channel conduction between the end of the second switch stops at the end of the third and the fourth channel conduction between the end of the tunnel.
2. booster circuit as claimed in claim 1 is characterized in that, this second voltage is a direct current voltage.
3. booster circuit as claimed in claim 1 is characterized in that, this second voltage equals this first voltage.
4. booster circuit as claimed in claim 1 is characterized in that, this first switch comprises a first transistor, has one first drain electrode, one first source electrode and a first grid, couples this first passage end, this second channel end and this first control end respectively; When the cross-pressure between this first grid and this first source electrode during greater than one first limit voltage, the conducting between this first drain electrode and this first source electrode of this first transistor; This second switch comprises a transistor seconds, and this transistor seconds has one second drain electrode, one second source electrode and a second grid, couples this third channel end, this four-way end and this second control end respectively; When the cross-pressure between this second grid and this second source electrode during greater than one second limit voltage, the conducting between this second drain electrode and this second source electrode of this transistor seconds; Wherein this first limit voltage is less than this second limit voltage.
5. booster circuit as claimed in claim 1 is characterized in that, when this first switch stopped between this first passage end and this second channel end conducting, this second switch made the voltage of this first passage end less than this second voltage.
6. booster circuit as claimed in claim 1 is characterized in that, also comprises:
One voltage detecting circuit provides a voltage detection signal according to the voltage of this Section Point in a dividing potential drop node.
7. booster circuit as claimed in claim 6; It is characterized in that; This voltage detecting circuit comprises one first resistance and one second resistance, and this first resistance is coupled between this Section Point and this dividing potential drop node, and this second resistance is coupled between this a dividing potential drop node and the ground terminal voltage.
8. booster circuit as claimed in claim 1 is characterized in that, also comprises:
One current detection circuit is coupled to this first switch, according to the electric current of this second channel end one current detection signal is provided.
9. booster circuit as claimed in claim 8 is characterized in that this current detection circuit comprises a resistance, is coupled between this a second channel end and the ground terminal voltage.
10. method with low-voltage driving one booster circuit, this booster circuit receive one first voltage so that an output voltage to be provided, and include a transistor seconds, and this transistor seconds has a second grid and one second source electrode; And this method comprises:
One the first transistor is provided, has a first grid and one first drain electrode, this first drain electrode couples this second source electrode; And
Provide a low tension switch signal to this first grid,,, cause this output voltage to be higher than this first voltage when this low tension switch signal makes the first transistor and this not conducting of transistor seconds with this first transistor of conducting optionally.
11. method as claimed in claim 10 is characterized in that, this low tension switch signal is to be provided by a chip.
12. method as claimed in claim 10 is characterized in that, also comprises:
Make this second grid be coupled to one second voltage.
13. method as claimed in claim 12 is characterized in that, this second voltage equals this first voltage.
14. method as claimed in claim 12 is characterized in that, this second voltage is a direct current voltage.
15. method as claimed in claim 11 it is characterized in that this booster circuit provides this output voltage in a Section Point, and this method comprises also:
One voltage detecting circuit is provided, couples this Section Point, one voltage detection signal is provided according to this output voltage; And
Receive this voltage detection signal with this chip.
16. method as claimed in claim 11 is characterized in that, also comprises:
One current detection circuit is provided, is coupled to this first transistor, according to this first the drain electrode electric current one current detection signal is provided; And
Receive this current detection signal with this chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110118576.4A CN102761260B (en) | 2011-04-26 | 2011-04-26 | With the booster circuit of low-voltage driving and correlation technique |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110118576.4A CN102761260B (en) | 2011-04-26 | 2011-04-26 | With the booster circuit of low-voltage driving and correlation technique |
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| CN102761260A true CN102761260A (en) | 2012-10-31 |
| CN102761260B CN102761260B (en) | 2016-06-29 |
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| CN201110118576.4A Expired - Fee Related CN102761260B (en) | 2011-04-26 | 2011-04-26 | With the booster circuit of low-voltage driving and correlation technique |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109412436A (en) * | 2018-11-26 | 2019-03-01 | 茂睿芯（深圳）科技有限公司 | A kind of synchronous rectification control chip and circuit |
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| US4709321A (en) * | 1986-10-31 | 1987-11-24 | Rca Corporation | Regulator protection circuit for video apparatus |
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| CN109412436A (en) * | 2018-11-26 | 2019-03-01 | 茂睿芯（深圳）科技有限公司 | A kind of synchronous rectification control chip and circuit |
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| CN102761260B (en) | 2016-06-29 |
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