CN102751646A - LD (Laser Diode) pumping green solid laser applying double TECs and temperature control method thereof - Google Patents
LD (Laser Diode) pumping green solid laser applying double TECs and temperature control method thereof Download PDFInfo
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- CN102751646A CN102751646A CN201110100932XA CN201110100932A CN102751646A CN 102751646 A CN102751646 A CN 102751646A CN 201110100932X A CN201110100932X A CN 201110100932XA CN 201110100932 A CN201110100932 A CN 201110100932A CN 102751646 A CN102751646 A CN 102751646A
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Abstract
The invention provides an LD (Laser Diode) pumping green solid laser applying double TECs (Thermal Electrical Cooler) and a temperature control method thereof. Two TECs are adopted to respectively lock the optimal working temperatures of an IR (infrared laser) and laser crystals, and the output of a green light intensity sensor is taken as the input to control the working current of the IR. In such a way, the LD pumping green solid laser reaches the effects of high output efficiency and stable output power. The LD pumping green solid laser is easy for batch production and can be used as a green light source module for a miniature laser projection device and the like.
Description
Technical field
The present invention relates to a kind of LD pump green light solid state laser and temperature-controlled process, relate in particular to a kind of LD pump green light solid state laser and temperature-controlled process thereof that adopts double T EC.
Background technology
Laser is approximately point-source of light because of it, and dispersion angle is little, and light path efficiency is high, and color representation power is strong, becomes more satisfactory micro projection light source gradually.
Development along with the LASER Light Source technology; Red light semiconductor laser and blue-light semiconductor laser be comparative maturity all; But the development of green light semiconductor also needs technical important breakthrough just might realize industrialization, present stage green (light) laser mainly produce by diode pumped solid state laser.
LD pump green light solid state laser is mainly by forming as semiconductor pumped lasing light emitter and laser crystal with 808nm infrared laser (IR, infra red).Usually the laser crystal condition of work requires than higher: the working temperature that at first is laser crystal is strict, and secondly laser crystal is wide strict to IR centre wavelength and ripple.And IR centre wavelength dispersion is generally bigger at present; Need satisfy the requirement of laser crystal through its centre wavelength of adjustment IR temperature control to the IR absorbing wavelength; Adopt single TEC to satisfy simultaneously, can't realize the industrialization of LD pump green light solid state laser IR wavelength adjustment and difficult to laser crystal working temperature control ratio.The present invention adopts double T EC structure, can make the industrialization of LD green glow light-pumped solid state laser become possibility.
Summary of the invention
The object of the present invention is to provide a kind of LD pump green light solid state laser that adopts double T EC, the laser operating efficiency of this structure is high, power output is stable, is prone to produce in batches, can be used as the green-light source of laser micro projector.
Adopt the LD pump green light solid state laser of double T EC, comprising:
Infrared laser IR, IR temperature sensor, IR temperature closed loop control circuit, the TEC1 that is used to adjust the IR wavelength, IR luminous power closed control circuit, laser crystal, laser crystal temperature sensor, laser crystal temperature closed loop control circuit, the TEC2 that is used to control the laser crystal temperature, green glow light intensity sensor, TEC1 and TEC2 are heat sink, and the heat conduction casing of placing said laser.Said laser crystal can be ND:YVO
4With PPLN or be the gummed crystal of KTP.
The present invention also provides a kind of temperature-controlled process that adopts the LD pump green light solid state laser of double T EC:
IR temperature closed loop control circuit is used to adjust the operating current of TEC1, with control IR working temperature.The IR centre wavelength of non-lock phase changes along with its temperature change, is about 0.3nm/ ℃ usually.The debugging calibration phase; With wavemeter monitoring IR wavelength; The operating current of adjusting TEC1 through the IR temperature-control circuit is with adjustment IR working temperature; Satisfy the requirement of laser crystal to the IR absorbing wavelength until the IR output wavelength, record IR temperature sensor output valve at this moment is as the settings of IR temperature-control circuit.During real work, the operating current of adjusting TEC1 through IR temperature closed loop control circuit is to adjust the IR working temperature and to be locked in this settings, and this moment, the wavelength of IR was required wavelength.The IR temperature-control circuit, as input, the TEC1 operating current is the close loop control circuit of output with the output of IR temperature sensor, obtains locking the purpose of IR wavelength through the working temperature of locking IR.Perhaps; The debugging calibration phase; Earlier locking laser crystal temperature is near the laser crystal nominal temperature and lock IR operating current, adjustment IR with the relative position of laser crystal and up to there being green glow to export; Operating current through IR temperature closed loop control circuit adjustment TEC1 scans red laser IR working temperature then; Like positive and negative 10 degree scope interscans at red laser IR temperature nominal value, obtain through green glow light intensity sensor or light power meter monitoring green glow power and by IR temperature closed loop control circuit simultaneously, IR temperature closed loop control circuit is preserved the IR working temperature of green glow power when maximum automatically as settings; The operating current of real work Phase I R temperature-control circuit adjustment TEC1 is with adjustment red laser IR working temperature and be locked in this settings.
Laser crystal temperature closed loop control circuit is used to adjust the operating current of TEC2, with the working temperature of control laser crystal.Usually same batch laser crystal optimum working temperature (the high light light conversion efficiency is arranged this moment) dispersion is little; Test out the be provided with temperature of laser crystal optimum working temperature earlier as laser crystal temperature closed loop control circuit; Operating current through laser crystal temperature closed loop control circuit adjustment TEC2 makes laser crystal be locked in the optimum working temperature state.In order to reduce to the requirement of laser crystal temperature closed loop control circuit and the influence of laser crystal optimum working temperature dispersion; On the basis of accomplishing to IR working temperature and operating current locking; Operating current through laser crystal temperature closed loop control circuit adjustment TEC2 scans the laser crystal working temperature; Like positive and negative 3 degree scope interscans at laser crystal working temperature nominal value; Obtain through green glow light intensity sensor or light power meter monitoring green glow power and by laser crystal temperature closed loop control circuit simultaneously, laser crystal temperature closed loop control circuit is preserved the laser crystal working temperature of green glow power when maximum automatically as settings; The operating current of real work stage laser crystal temperature-control circuit adjustment TEC2 is with adjustment laser crystal working temperature and be locked in this settings.
The output of green glow light intensity sensor is as the input of IR luminous power closed control circuit, and the power output of the operating current control IR through adjustment infrared laser IR obtains the green glow of light stable intensity.
Reduce volume in order to reduce cost, said IR temperature closed loop control circuit, laser crystal temperature closed loop control circuit and IR luminous power closed control circuit can merge with other circuit in the application system.
The relative position of infrared laser IR and laser crystal can be adjusted, and can lock the position of IR and laser crystal for the ease of being in course of adjustment, and adopts low thermal resistance technology that IR, laser crystal are separately fixed on the last chill surface of TEC1, TEC2.
The relative position of infrared laser IR and laser crystal is in course of adjustment; The heat delivery surface of TEC1, TEC2 can be not in one plane; Be to guarantee TEC1, TEC2 and heat sink tight the contact, TEC1 or TEC2 contact with heat sink through heat-conducting glue, fix again after the adjustment heat sink on; Or " L " type of employing is heat sink, and TEC1, TEC2 are placed on respectively through heat-conducting glue on the face of " L " type, and the adjustment back is fixing.
Description of drawings
Fig. 1 is the plan structure figure of the LD pump green light solid state laser of employing double T EC provided by the invention;
Fig. 2 be employing double T EC provided by the invention LD pump green light solid state laser face structure chart;
Fig. 3 is that another embodiment of the LD pump green light solid state laser of employing double T EC provided by the invention faces structure chart.
Specific embodiments
For making the object of the invention, technical scheme and technique effect clearer, content of the present invention is done further to describe in detail below in conjunction with accompanying drawing.
Fig. 1 and Fig. 2 are respectively the structure vertical view and the front view of the LD pump green light solid state laser of employing double T EC provided by the invention; The laser that adopts double T EC is by infrared laser IR (131), laser crystal (141), the TEC1 (111) that is used to adjust the IR wavelength, the TEC2 (112) that is used to control the laser crystal temperature, IR temperature sensor (121), laser crystal temperature sensor (122), IR temperature closed loop control circuit (171), laser crystal temperature closed loop control circuit (181), green glow light intensity sensor (151), IR luminous power closed control circuit (191) and TEC1 and the heat sink formations such as (161) of TEC2, and wherein heat sink (161) can be the bottom surfaces of placing said laser heat conduction casing.
In the present embodiment, infrared laser IR (131) is the infrared laser of 808nm, and laser crystal (141) is the gummed crystal, and this gummed crystal is by ND:YVO
4(141a) and two kinds of crystal of PPLN (141b) gummed form.The IR input of gummed crystal is ND:YVO
4(141a) crystal, input face (a) are coated with the anti-reflection film of 808nm infrared wavelength, the height reflection mould of 1064nm wavelength, the highly reflecting films of 532nm wavelength.The output of gummed crystal is PPLN (141b) crystal, and output face (b) is coated with the height reflection mould of 1064nm wavelength, the low-reflection film of 532nm wavelength.The infrared laser that infrared laser IR (131) launches 808nm impinges perpendicularly on gummed crystal input end face (a), through ND:YVO
4(141a) crystal absorbs the infrared laser that produces 1064nm; The infrared laser of 1064nm incides PPLN (141b) crystal double frequency through cemented surface; Produce the green laser of 532nm; Do not have the laser of absorbed 1064nm constantly between two end faces of gummed crystal, to come back reflective, up to being absorbed fully by PPLN (141b) crystal; PPLN (141b) crystal comes back reflective to the light beam of the 532nm of the laser freuqency doubling generation of 1064nm in the resonant cavity that two end faces of gummed crystal form, export the laser of 532nm at last from low reflection end face (b).
Infrared laser IR (131) is conventional infrared semiconductor laser, and along with variation of temperature, its centre wavelength can be drifted about, but its temperature and centre wavelength have corresponding relation.Infrared laser IR (131), IR temperature sensor (121) adopt low thermal resistance technology to be fixed on the chill surface of TEC1 (111).With IR temperature sensor (121) is input; IR temperature closed loop control circuit (171) is realized the locking to infrared laser IR (131) working temperature through the operating current of control TEC1 (111); Thereby realize locking to the best centre wavelength of infrared laser IR; Its implementation is: the debugging calibration phase, and with wavemeter monitoring IR wavelength, the operating current of adjusting TEC1 through the IR temperature-control circuit is with adjustment IR working temperature; Satisfy the requirement of laser crystal to the IR absorbing wavelength until the IR output wavelength, record IR temperature sensor output valve at this moment is as the settings of IR temperature closed loop control circuit; In the real work stage, the operating current of adjusting TEC1 through the IR temperature-control circuit is to adjust the IR working temperature and to be locked in this settings, and this moment, the wavelength of IR was required wavelength.Or debugging calibration phase; Elder generation's locking laser crystal (141) temperature is near nominal temperature and lock IR (131) operating current, adjustment IR (131) with the relative position of laser crystal (141) and up to green glow output is arranged; Operating current through IR temperature closed loop control circuit (171) adjustment TEC1 (111) scans IR (131) working temperature then; Like positive and negative 10 degree scope interscans at IR (131) temperature nominal value; Also obtained by IR temperature closed loop control circuit (171) through serial ports through green glow light intensity sensor (151) or light power meter monitoring green glow power simultaneously, IR (131) working temperature when IR temperature closed loop control circuit (171) is preserved green glow power maximum automatically is as settings; The operating current of real work Phase I R temperature-control circuit (171) adjustment TEC1 (111) is with adjustment IR (131) working temperature and be locked in this settings.
Adopt low thermal resistance technology, laser crystal (141), laser crystal temperature sensor (122) and green glow light intensity inductor (151) are fixed on the chill surface of TEC2 (112).With laser crystal temperature sensor (122) is input; Laser crystal temperature closed loop control circuit (181) is realized the locking to laser crystal (141) optimum working temperature through the operating current of control TEC2 (112); Its implementation is: test out the be provided with temperature of laser crystal optimum working temperature as laser crystal temperature closed loop control circuit earlier; Operating current through laser crystal temperature closed loop control circuit adjustment TEC2 makes laser crystal be locked in the optimum working temperature state.In order to reduce to the requirement of laser crystal temperature closed loop control circuit (181) and the influence of laser crystal (141) optimum working temperature dispersion; On the basis of accomplishing to the locking of IR (131) working temperature; Operating current through laser crystal temperature closed loop control circuit (181) adjustment TEC2 (112) scans brilliant (141) working temperature of laser; Like positive and negative 2 degree scope interscans at brilliant (141) the working temperature nominal value of laser; Also obtained by laser crystal temperature closed loop control circuit (181) through serial ports through green glow light intensity sensor (151) or light power meter monitoring green glow power simultaneously, brilliant (141) working temperature of the laser when laser crystal temperature closed loop control circuit (181) is preserved green glow power maximum automatically is as settings; The operating current of real work stage laser crystal temperature-control circuit (181) adjustment TEC2 (112) is with brilliant (181) working temperature of adjustment laser and be locked in this settings.
In the relative position process of adjustment IR (131) and laser crystal (141); The heat delivery surface of TEC1 (111), TEC2 (112) maybe be not in one plane; In order to guarantee that TEC1, TEC2 closely contact with heat sink (161); TEC1 or TEC2 contact with heat sink through heat-conducting glue, after having adjusted again UV glue fixing heat sink on; Or adopt structure as shown in Figure 3, and adopting " L " type heat sink (261), TEC1, TEC2 are placed on respectively on the heat sink face of " L " type through heat-conducting glue, and the adjustment back is fixed with UV glue.
Said laser module is placed in the heat conduction casing, bottom surface and two sides that heat sink (161) and " L " type heat sink (261) can be said heat conduction casings.
With the output of green glow light intensity inductor (151) input as IR luminous power closed control circuit (191); The power output of operating current control infrared laser IR (131) through adjustment infrared laser IR (131) makes said green (light) laser power output stable.
The hot side of TEC1 (111), TEC2 (112) is fixed on the heat dispersion heat sink (161) through low thermal resistance technology.As required, TEC1 (111), TEC2 (112) also can have the enthusiasm of independently dispelling the heat separately.
In order to reduce cost, the green module during independent work, said IR temperature closed loop control circuit (171), laser crystal temperature closed loop control circuit (181) and IR luminous power closed control circuit (191) can with other circuit merging in the application system.
Through laser structure provided by the invention and temperature-controlled process; Can use the centre wavelength dispersion is bigger cheaply common infrared laser IR and the bigger laser crystal of optimum working temperature dispersion; Can mass-produce high efficiency, type green (light) laser that power output is stable, this laser can be used as the green-light source module of laser micro projector etc.
Though with reference to preferred implementation of the present invention; The present invention is illustrated and describes, but the present invention does not receive the restriction of above embodiment; That describes in the foregoing description and the specification just explains principle of the present invention; Under the prerequisite that does not break away from spirit and scope of the invention, the thinkable various changes and modifications of those of ordinary skill in the art all fall in the scope of the invention that requires protection.
Claims (11)
1. adopt the LD pump green light solid state laser of double T EC, it is characterized in that, comprising:
Infrared laser IR, IR temperature sensor, IR temperature closed loop control circuit, the TEC1 that is used to adjust the IR wavelength, IR luminous power closed control circuit, laser crystal, laser crystal temperature sensor, laser crystal temperature closed loop control circuit, the TEC2 that is used to control the laser crystal temperature, green glow light intensity sensor and TEC1 and TEC2 are heat sink.
2. the LD pump green light solid state laser of employing double T EC according to claim 1 is characterized in that, the operating current of said IR temperature closed loop control circuit adjustment TEC1, control IR working temperature.
3. the LD pump green light solid state laser of employing double T EC according to claim 1 is characterized in that, the operating current of said laser crystal temperature closed loop control circuit adjustment TEC2, the working temperature of control laser crystal.
4. the LD pump green light solid state laser of employing double T EC according to claim 1 is characterized in that the input of the output of green glow light intensity sensor as IR luminous power closed control circuit, controls the power output of IR through the operating current of adjustment IR.
5. the LD pump green light solid state laser of employing double T EC according to claim 1; It is characterized in that said IR temperature closed loop control circuit, laser crystal temperature closed loop control circuit and IR luminous power closed control circuit can merge with other circuit in the application system.
6. the LD pump green light solid state laser of employing double T EC according to claim 1 is characterized in that said laser crystal is ND:YVO
4With PPLN gummed crystal or ND:YVO
4With KTP gummed crystal.
7. the LD pump green light solid state laser of employing double T EC according to claim 1 is characterized in that said infrared laser IR, laser crystal are separately fixed at TEC1, TEC2 is last.
8. the LD pump green light solid state laser of employing double T EC according to claim 1 is characterized in that said laser can be positioned in the heat conduction casing, and the heat conduction casing has thermolysis simultaneously.
9. according to the LD pump green light solid state laser of claim 1 or 8 described employing double T EC; It is characterized in that; TEC1, TEC2 heat sink places on the plane or on " L " profile, said plane or " L " profile can be the bottom surface and the two sides of the heat conduction casing of said laser.
10. adopt the temperature-controlled process of the LD pump green light solid state laser of double T EC, it is characterized in that, comprise:
(1) operating current of IR temperature closed loop control circuit adjustment TEC1, the implementation of control IR working temperature is:
The debugging calibration phase; With spectrometer monitoring IR wavelength; The operating current of adjusting TEC1 through the IR temperature-control circuit is with adjustment IR working temperature; Satisfy the requirement of laser crystal to the IR absorbing wavelength until the IR output wavelength, record IR temperature sensor output valve at this moment is as the settings of IR temperature closed loop control circuit; In the real work stage, the operating current of adjusting TEC1 through the IR temperature-control circuit is to adjust infrared laser IR working temperature and to be locked in this settings, and this moment, the wavelength of IR was required wavelength;
Or in the debugging calibration phase; The first relative position of locking laser crystal temperature and infrared laser IR operating current, adjustment infrared laser IR and laser crystal and up to there being green glow to export; Operating current through IR temperature closed loop control circuit adjustment TEC1 scans the IR working temperature then; Obtain through green glow light intensity sensor or light power meter monitoring green glow power and by IR temperature closed loop control circuit simultaneously, IR temperature closed loop control circuit is preserved the infrared laser IR working temperature of green glow power when maximum automatically as settings; The operating current of real work Phase I R temperature-control circuit adjustment TEC1 is with adjustment infrared laser IR working temperature and be locked in this settings;
(2) operating current of laser crystal temperature closed loop control circuit adjustment TEC2, the implementation of the working temperature of control laser crystal is:
Test out the be provided with temperature of laser crystal optimum working temperature as laser crystal temperature closed loop control circuit earlier, the operating current through laser crystal temperature closed loop control circuit adjustment TEC2 makes laser crystal be locked in the optimum working temperature state;
Or on the basis that in accomplishing (1), IR working temperature and operating current is locked; Operating current through laser crystal temperature closed loop control circuit adjustment TEC2 scans the laser crystal working temperature; Obtain through green glow light intensity sensor or light power meter monitoring green glow power and by laser crystal temperature closed loop control circuit simultaneously, laser crystal temperature closed loop control circuit is preserved the laser crystal working temperature of green glow power when maximum automatically as settings; The operating current of real work stage laser crystal temperature-control circuit adjustment TEC2 is with adjustment laser crystal working temperature and be locked in this settings.
11. the temperature-controlled process of the LD pump green light solid state laser of employing double T EC according to claim 10 is characterized in that said step (1) and step (2) do not limit order.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103730828A (en) * | 2014-01-15 | 2014-04-16 | 中国科学院武汉物理与数学研究所 | Double electro-optic phase modulator crystal based residual amplitude modulation active control system |
| CN105319160A (en) * | 2015-10-30 | 2016-02-10 | 中国电子科技集团公司第四十八研究所 | Temperature compensation device for infrared transmitter for gas-liquid two-phase flow detection and infrared detection device |
| CN107946884A (en) * | 2017-12-25 | 2018-04-20 | 成都心无界光电技术有限公司 | A kind of middle infrared solid laser |
| CN108666855A (en) * | 2018-07-24 | 2018-10-16 | 核工业理化工程研究院 | Laser crystal bilateral temperature regulating device |
| CN109473868A (en) * | 2018-12-24 | 2019-03-15 | 北京无线电计量测试研究所 | A kind of VCSEL temperature spot scan method and system for CPT atomic clock |
| CN114361918A (en) * | 2022-03-21 | 2022-04-15 | 深圳市星汉激光科技股份有限公司 | Laser light source pumping system with variable wavelength |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5974062A (en) * | 1997-01-09 | 1999-10-26 | Fuji Photo Film Co., Ltd. | Laser drive method, laser drive system, and radiation image read-out apparatus |
| US20020009105A1 (en) * | 1999-12-09 | 2002-01-24 | Kenji Matsumoto | Light emitting device |
| US20040032646A1 (en) * | 2002-01-31 | 2004-02-19 | Cyoptics Ltd. | Hybrid optical transmitter with electroabsorption modulator and semiconductor optical amplifier |
| US20060056470A1 (en) * | 2004-09-14 | 2006-03-16 | Dan Liu | Diode-pumped solid-state laser with self-maintained multi-dimensional optimization |
| CN101043119A (en) * | 2006-03-23 | 2007-09-26 | 宫地技术株式会社 | Laser beam processing apparatus |
| CN101507064A (en) * | 2006-10-24 | 2009-08-12 | 松下电器产业株式会社 | Internal resonator type SHG light source |
| JP2011009772A (en) * | 2010-09-01 | 2011-01-13 | Shimadzu Corp | Adequate temperature measuring method for solid-state laser device |
| CN202009156U (en) * | 2011-04-21 | 2011-10-12 | 上海三鑫科技发展有限公司 | LD pump green solid laser adopting two TECs |
-
2011
- 2011-04-21 CN CN201110100932XA patent/CN102751646A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5974062A (en) * | 1997-01-09 | 1999-10-26 | Fuji Photo Film Co., Ltd. | Laser drive method, laser drive system, and radiation image read-out apparatus |
| US20020009105A1 (en) * | 1999-12-09 | 2002-01-24 | Kenji Matsumoto | Light emitting device |
| US20040032646A1 (en) * | 2002-01-31 | 2004-02-19 | Cyoptics Ltd. | Hybrid optical transmitter with electroabsorption modulator and semiconductor optical amplifier |
| US20060056470A1 (en) * | 2004-09-14 | 2006-03-16 | Dan Liu | Diode-pumped solid-state laser with self-maintained multi-dimensional optimization |
| CN101043119A (en) * | 2006-03-23 | 2007-09-26 | 宫地技术株式会社 | Laser beam processing apparatus |
| CN101507064A (en) * | 2006-10-24 | 2009-08-12 | 松下电器产业株式会社 | Internal resonator type SHG light source |
| JP2011009772A (en) * | 2010-09-01 | 2011-01-13 | Shimadzu Corp | Adequate temperature measuring method for solid-state laser device |
| CN202009156U (en) * | 2011-04-21 | 2011-10-12 | 上海三鑫科技发展有限公司 | LD pump green solid laser adopting two TECs |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103730828A (en) * | 2014-01-15 | 2014-04-16 | 中国科学院武汉物理与数学研究所 | Double electro-optic phase modulator crystal based residual amplitude modulation active control system |
| CN105319160A (en) * | 2015-10-30 | 2016-02-10 | 中国电子科技集团公司第四十八研究所 | Temperature compensation device for infrared transmitter for gas-liquid two-phase flow detection and infrared detection device |
| CN107946884A (en) * | 2017-12-25 | 2018-04-20 | 成都心无界光电技术有限公司 | A kind of middle infrared solid laser |
| CN108666855A (en) * | 2018-07-24 | 2018-10-16 | 核工业理化工程研究院 | Laser crystal bilateral temperature regulating device |
| CN109473868A (en) * | 2018-12-24 | 2019-03-15 | 北京无线电计量测试研究所 | A kind of VCSEL temperature spot scan method and system for CPT atomic clock |
| CN114361918A (en) * | 2022-03-21 | 2022-04-15 | 深圳市星汉激光科技股份有限公司 | Laser light source pumping system with variable wavelength |
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Application publication date: 20121024 |