CN102751397A - Laser lift-off method of sapphire pattern substrate - Google Patents
Laser lift-off method of sapphire pattern substrate Download PDFInfo
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- CN102751397A CN102751397A CN201110101453XA CN201110101453A CN102751397A CN 102751397 A CN102751397 A CN 102751397A CN 201110101453X A CN201110101453X A CN 201110101453XA CN 201110101453 A CN201110101453 A CN 201110101453A CN 102751397 A CN102751397 A CN 102751397A
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Abstract
The invention provides a laser lift-off method of a sapphire pattern substrate. The method comprises the following steps that a, photoresist is adopted for carrying out photoetching development on the sapphire substrate surface, and a mask in a required shape is formed; b, the sapphire substrate subjected to the step a is subjected to inductive coupling plasma etching, and the etching conditions include conditions that the physical bombardment electrode power is greater than or equal to 50W but is smaller than 180W, and the chemical reaction electrode power is greater than or equal to 400W but is smaller than 850W; c, the sapphire substrate subjected to the step b is cleaned, and the mask is removed; the metallorganic chemical vapor deposition is carried out after the drying, and an epitaxial layer is formed on the sapphire substrate; and d, an Si or Cu base plate is bonded on the upper surface of the epitaxial layer, and the sapphire substrate is removed through laser lift-off. The laser lift-off method provided by the invention has the advantage that the occurrence of the epitaxial wafer breaking in the sapphire substrate lift-off process can be effectively prevented.
Description
Technical field
The invention belongs to field of photoelectric technology, relate in particular to a kind of method of sapphire graphical substrate laser lift-off.
Background technology
Sapphire wafer is widely used as the substrate of the LED of III-V family device nitride epitaxial film at present; Yet because the big lattice mismatch of nitride and sapphire and the difference of thermal coefficient of expansion; Make that the nitride material dislocation and the defect concentration of on substrate, growing are bigger, influenced the luminous efficiency and the life-span of device.Patterned substrate (PSS) technology can reduce the dislocation and the defective of epitaxial material effectively, in the nitride device preparation, has obtained using widely.
PSS (Patterned Sapphire Substrate) sapphire graphical substrate; Promptly through elder generation's growing mask on Sapphire Substrate, and through photoetching process mask is carved figure, utilize ICP lithographic technique etching sapphire then; And remove mask, grown epitaxial layer above that again; Then under Si or the effect of Cu support substrates, the laser lift-off Sapphire Substrate.In the stripping process,, gradually to internal irradiation, the epitaxial wafer full wafer that is bonded on Si or the Cu support substrates is peeled off from sapphire from the edge through adopting the laser radiation sapphire back side.But the nitrogen that produces in the stripping process can not in time be discharged, and too high nitrogen pressure will cause the phenomenon of epitaxial wafer fragmentation.
Summary of the invention
The invention solves the technical problem that causes the epitaxial wafer fragmentation in the Sapphire Substrate stripping process that exists in the prior art.
The invention provides a kind of method of sapphire graphical substrate laser lift-off, may further comprise the steps:
A. adopt photoresist that photoetching development is carried out on the Sapphire Substrate surface, form the mask of required form;
B. to carrying out the inductively coupled plasma etching through the Sapphire Substrate of step a, etching condition comprises: 50 W≤physical bombardment electrode power＜180W, 400W≤chemical reaction electrode power＜850W;
C. to cleaning, remove mask through the Sapphire Substrate of step b; Dry laggard row metal organic chemical vapor deposition, on Sapphire Substrate, form epitaxial loayer;
D. at epitaxial loayer upper surface bonding Si or Cu substrate, laser lift-off is removed Sapphire Substrate.
The method of sapphire graphical substrate laser lift-off provided by the invention; Through changing the process conditions of inductively coupled plasma (ICP) etching, specifically comprise increasing the chemical reaction electrode power, and reduce the physical bombardment electrode power simultaneously; Increase the be etched groove of bottom, graphics field of Sapphire Substrate; Make follow-up epitaxial wafer cross growth on the one hand, improve stress distribution, reduce dislocation density in the epitaxial loayer; On the other hand, increase the nitrogen venthole of bottom, the nitrogen of being convenient to produce in the stripping process is in time got rid of, thereby effectively prevents the generation of the epitaxial wafer fragmentation phenomenon in the Sapphire Substrate stripping process.
Description of drawings
Fig. 1 is the sketch map that Sapphire Substrate is carried out photoetching development.
Fig. 2 is the structural representation after the ICP etching Sapphire Substrate.
Fig. 3 is the structural representation after the Sapphire Substrate surface clean is removed mask.
Fig. 4 is the structural representation of Sapphire Substrate superficial growth epitaxial loayer.
Fig. 5 is the structural representation after the bonding support substrates on the epitaxial loayer.
Fig. 6 is the structural representation of epitaxial loayer and support substrates behind the laser lift-off.
Embodiment
For technical problem, technical scheme and beneficial effect that the present invention is solved clearer, below in conjunction with accompanying drawing and the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explanation the present invention, and be not used in qualification the present invention.
The invention provides a kind of method of sapphire graphical substrate laser lift-off, may further comprise the steps:
A. adopt photoresist that photoetching development is carried out on the Sapphire Substrate surface, form the mask of required form;
B. to carrying out the inductively coupled plasma etching through the Sapphire Substrate of step a, etching condition comprises: 50 W≤physical bombardment electrode power＜180W, 400W≤chemical reaction electrode power＜850W;
C. to cleaning, remove mask through the Sapphire Substrate of step b; Dry laggard row metal organic chemical vapor deposition, on Sapphire Substrate, form epitaxial loayer;
D. at epitaxial loayer upper surface bonding Si or Cu substrate, laser lift-off is removed Sapphire Substrate.
Particularly, as shown in Figure 1, earlier on Sapphire Substrate 1, cover photoresist, carry out photoetching development then, remove the part photoresist, the photoresist layer that obtains having required form is a mask 2.
Among the present invention, the photoresist that is adopted can be the various common mixtures that contain resin, emulsion and solvent in the prior art.Wherein, resin, emulsion and solvent types are conventionally known to one of skill in the art.For example; Resin can adopt various acrylic copolymers common in the prior art; Particularly, can adopt in methacrylic resin, organosilicon modified crylic acid resin, epoxy acrylic resin, polyurethane acrylate resin, polyester acrylate resin, polyether acrylate resin, the polyacrylic acid propyl ester resin one or more.Said emulsion can adopt various nitrine quinones, azodiisobutyronitrile (AIBN), 1 for example, 2-two nitrine quinone-4-sulphonic acid ester, 1,2-two nitrine-5-sulphonic acid ester or 1,2-two nitrine quinone-6-sulphonic acid ester.Said solvent can be selected from least a in acetate propylene glycol monomethyl ether ester, cyclohexanone, the ethyl lactate.Among the present invention, said photoresist can directly adopt the various products that are purchased, and for example can adopt AZ703.
The step of said photoetching development comprises that having the Sapphire Substrate of photoresist to place surface coverage carries out radiation under the ultraviolet light; Wherein the photoresist layer in ultraviolet radiation zone is retained after development; Radiation areas are not developed removal, thereby form the mask with specific required form on the Sapphire Substrate surface.Under the preferable case, exposure dose is 120-160mj/cm
2
The shape of said mask can be controlled based on the figure that will form, and for example can be circular, square or striated, and the present invention does not have particular determination.
Photoetching development carries out the ICP etching to Sapphire Substrate after accomplishing then.In the ICP etching process, be not etched by the Sapphire Substrate 1 of mask 2 masked areas, mask 2 masked areas are not etched and form island areas 11, thereby on Sapphire Substrate 1, form the etching figure, and etching figure bottom produces groove 12 simultaneously, and is as shown in Figure 2.Among the present invention,, promptly reduce the physical bombardment power of motor simultaneously through increasing the chemical reaction electrode power through changing etching condition; Can increase the area of the groove 12 of etching figure bottom; Make follow-up epitaxial wafer 3 cross growths on the one hand, improve stress distribution, reduce dislocation density in the epitaxial loayer 3; On the other hand, increase the nitrogen venthole of bottom, the nitrogen of being convenient to produce in the stripping process is in time got rid of, thereby effectively prevents the generation of the epitaxial wafer fragmentation phenomenon in the Sapphire Substrate stripping process.Concrete, among the present invention, 50 W≤physical bombardment electrode power＜180W, 400W≤chemical reaction electrode power＜850W.
Said ICP etching is carried out through the ICP etching apparatus, for example can adopt the ELEDE 330 high-density plasma ICP etching machines of northern Microtronic A/S exploitation.Among the present invention, because sapphire (Al
2O
3) bond energy of Al-O key is bigger in the substrate, so the gas that the ICP etching adopts is BCl
3With Cl
2Mist, the flow of mist is 40-55sccm.In the mist, main etching gas is BCl
3, its Cl that decompose to produce can with Al
2O
3Chemical reaction takes place, and etching mechanism is shown below.
BCl
3?→?BCl
x?+?Cl?(x=0，1，2)
Al
2O
3?+?BCl
3?→?Al?+?BOCl
y?+?Cl?(y=1，2，3)
Al
2O
3?+?BCl
x?→?Al?+?BOCl
z?+?Cl?(z=1，2，3)
Cl?+?Al?→?AlCl
3
Cl in the mist
2Can decompose and produce Cl
+, Cl
-And Cl, wherein Cl
+Can promote the physical bombardment in the ICP etching process; In addition, Cl
2Existence can weaken the probability that active chlorine atom mutually combines, guarantee the concentration of etching ion in the ICP etching process.Under the preferable case, in the mist, BCl
3Flow be 32-40sccm, Cl
2Flow be 8-15sccm.
Among the present invention, etching condition also comprises: pressure is 2-8mTorr, and etch period is 3-10min.The temperature of ICP etching need not too high, and under the preferable case, etching temperature is 20-130 ℃.
Based on method of the present invention, the ICP etching is cleaned Sapphire Substrate after accomplishing.The main effect of cleaning is used to remove the mask 2 that covers on Sapphire Substrate 1 island areas 11, and the structure of the Sapphire Substrate 1 after the cleaning is as shown in Figure 3, and cleaning and removing is except that the growth that helps follow-up epitaxial loayer 3 behind the mask 2.The method of said cleaning is conventionally known to one of skill in the art, and they are different and different according to the ICP etching temperature.For example, when the ICP etching temperature was lower than 130 ℃, then cleaning process only needed that Sapphire Substrate is soaked in the acetone soln ultrasonic cleaning and can remove mask.If the ICP etching temperature is higher than 130 ℃; Mask carbonization in the ICP etching process; Then be difficult to dissolve with acetone and remove, must be soaked in then and carry out ultrasonic cleaning in the mixed solution that contains the concentrated sulfuric acid and hydrogen peroxide solution to dissolve except that the mask after the carbonization this moment with Sapphire Substrate earlier 600-800 ℃ of annealing down.
After cleaning completion, dry said Sapphire Substrate.Then, Sapphire Substrate is carried out metal-organic chemical vapor deposition equipment, on Sapphire Substrate 1, form epitaxial loayer 3, as shown in Figure 4.The method of said metal-organic chemical vapor deposition equipment is conventionally known to one of skill in the art, comprises Sapphire Substrate is placed MOCVD (metal-organic chemical vapor deposition equipment) reaction cavity, thereby on Sapphire Substrate, forms epitaxial loayer.Among the present invention; Because Sapphire Substrate 1 surface through the ICP etching has island areas 11; Therefore epitaxial loayer 3 is mainly cross growth in growth course; Can reduce epitaxial loayer 3 and the stress that Sapphire Substrate 1 produces owing to laser radiation at the interface, reduce the damage of epitaxial wafer in the follow-up stripping process.
Among the present invention, substrate is a sapphire, and the epitaxial loayer that therefore forms preferably adopts gallium nitride (GaN).GaN is broad stopband (3.4eV) direct gap semiconductor material, can realize the luminous of whole visible spectrum through suitable doping.Particularly, the step of metal-organic chemical vapor deposition equipment comprises the Sapphire Substrate after the ICP etching is placed the MOCVD reaction cavity that reacting gas adopts trimethyl gallium (TMGa) and NH
3Mist, H is adopted in carrier gas
2, earlier under 520 ℃ on Sapphire Substrate growth regulation one deck, then under 1000-1060 ℃ on ground floor the continued growth second layer, form said epitaxial loayer.Pressure is 100torr in the MOCVD reaction cavity.
Under the preferable case, the flow of trimethyl gallium is 40-120 μ mol/min during growth regulation one deck, NH
3Flow be 0.1-0.3mol/min; The flow of trimethyl gallium is 40-120 μ mol/min during the growth second layer, NH
3Flow be 0.2-0.6mol/min.More preferably under the situation, the thickness of ground floor is 20-25nm, and the thickness of the second layer is 2 μ m.
After forming epitaxial loayer 3, in the upper surface bonding support substrates 4 of epitaxial loayer 3, as shown in Figure 5 then.The material of said support substrates 4 is conventionally known to one of skill in the art, for example can be Si or Cu substrate.The step of said bonding is conventionally known to one of skill in the art, repeats no more among the present invention.After bonding is accomplished, also need place vacuum chamber to take bubble away the system behind the bonding, to guarantee evenly do not have empty tight the contact between epitaxial wafer 3 and the support substrates 4.
At last, adopt laser radiation to peel off Sapphire Substrate 1, epitaxial wafer 3 full wafer on the Sapphire Substrate 1 that is attached on the support substrates 4 is peeled off, it is as shown in Figure 6 with the structure of support substrates 4 to peel off back epitaxial wafer 3.Can also can shine downwards from the upwards irradiation of bottom of Sapphire Substrate 1 during laser radiation from the top of support substrates 4.Among the present invention, owing to be formed with island areas 11 on the Sapphire Substrate 1, so epitaxial loayer 3 is less with the bound fraction of Sapphire Substrate 1; In addition; Etching figure bottom has bigger groove 12; Can in time get rid of the nitrogen that produces in the stripping process; Therefore can not produce the phenomenon of epitaxial wafer fragmentation in the stripping process, can also reduce laser energy in addition, promptly adopt more low-energy laser beam can realize peeling off of Sapphire Substrate 1 among the present invention.Among the present invention, common various lasers are adopted in laser radiation constantly, for example can adopt the KrF excimer laser.Under the preferable case, the condition of laser lift-off comprises: optical maser wavelength 248nm, energy density 400mJ/cm
2, spot size is 0.5mm * 0.5mm, and pulse duration is 30ns, and irradiation time is 5-10s.
Below in conjunction with embodiment the present invention is described further.
(1) on Sapphire Substrate, apply photoresist AZ703, place then under the ultraviolet light and make public, exposure dose is 150mj/cm
2, formation has the striated mask.
(2) Sapphire Substrate that the surface is had a striated mask places ELEDE 330 high-density plasma ICP etching machines to carry out the ICP etching, and etching condition is:
Reaction chamber temperature is 120 ℃, and pressure is 5mTorr, and etching gas is BCl
3With Cl
2Mist (BCl wherein
3Flow be 36sccm, Cl
2Flow be 9sccm), the physical bombardment electrode power is 150W, the chemical reaction electrode power is 600W, etch period is 5min.
(3) after the ICP etching finishes, above-mentioned Sapphire Substrate is dipped in the acetone soln ultrasonic cleaning 5min, and oven dry.
(4) above-mentioned Sapphire Substrate is placed the MOCVD reaction cavity, adopt TMGa and NH
3As reacting gas, carrier gas is H
2, be 25nm ground floor GaN layer (the TMGa flow is 40 μ mol/min, and the NH3 flow is 0.1mol/min) at 520 ℃ of following growth thickness earlier; Elevated temperature to 1050 ℃ then, continued growth thickness is that (the TMGa flow is 40 μ mol/min to 2 μ m second layer GaN layers, NH
3Flow is 0.2mol/min), thus the GaN epitaxial loayer formed.
(5) at the upper surface bonding Si of epitaxial wafer substrate, and place vacuum chamber to take bubble away, adopt the bottom surface of KrF excimer laser irradiation Sapphire Substrate then, illuminate condition is: optical maser wavelength is 248nm, energy density 400mJ/cm
2, spot size is 0.5mm * 0.5mm, pulse duration 30ns, and irradiation time 7s peels off together with the Si substrate epitaxial wafer simultaneously from Sapphire Substrate, and epitaxial wafer does not have the fragmentation phenomenon in the stripping process.
Adopt and carry out with embodiment 1 identical step, difference is: in the step (2), the physical bombardment electrode power is 50W, and the chemical reaction electrode power is 850W, and etch period is 5min.
Adopt and carry out with embodiment 1 identical step, difference is: in the step (2), the physical bombardment electrode power is 170W, and the chemical reaction electrode power is 450W, and etch period is 5min.
Adopt and carry out with embodiment 1 identical step, difference is:
In the step (2), reaction chamber temperature is 180 ℃;
In the step (3), Sapphire Substrate in 700 ℃ of annealing down, is placed the dense H that contains 98wt% then
2SO
4And H
2O
2Ultrasonic cleaning 5min in the mixed solution of (volume ratio is 15:1), oven dry.
Comparative Examples 1
Adopt and carry out with embodiment 1 identical step, difference is: the physical bombardment electrode power is 180W, and the chemical reaction electrode power is 400W, and etch period is 5min.
Performance test:
Repeat the step 100 time of embodiment 1-4 and Comparative Examples 1, write down the yields of the epitaxial wafer after peeling off, the result is as shown in table 1.
Table 1
| Embodiment and Comparative Examples | Yields (%) |
| |
93 |
| Embodiment | |
| 2 | 85 |
| Embodiment | |
| 3 | 88 |
| Embodiment | |
| 4 | 91% |
| Comparative Examples 1 | 80% |
Have the test result of last table 1 to find out, among the present invention through control IC P etching condition, the generation of epitaxial wafer fragmentation phenomenon in the time of effectively preventing laser lift-off, thus the yields of embodiment 1-4 up to 85% and more than, obviously be superior to Comparative Examples 1.
The above is merely preferred embodiment of the present invention, not in order to restriction the present invention, all any modifications of within spirit of the present invention and principle, being done, is equal to and replaces and improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. the method for a sapphire graphical substrate laser lift-off is characterized in that, may further comprise the steps:
A. adopt photoresist that photoetching development is carried out on the Sapphire Substrate surface, form the mask of required form;
B. to carrying out the inductively coupled plasma etching through the Sapphire Substrate of step a, etching condition comprises: 50 W≤physical bombardment electrode power＜180W, 400W＜chemical reaction electrode power≤850W;
C. to cleaning, remove mask through the Sapphire Substrate of step b; Dry laggard row metal organic chemical vapor deposition, on Sapphire Substrate, form epitaxial loayer;
D. at epitaxial loayer upper surface bonding Si or Cu substrate, laser lift-off is removed Sapphire Substrate.
2. method according to claim 1 is characterized in that, among the step a, photoresist is the mixture that contains resin, emulsion and solvent.
3. method according to claim 1 and 2 is characterized in that, among the step a, the step of photoetching development comprises that the Sapphire Substrate that surfaces coated is covered with photoresist places radiant exposure under the ultraviolet light, and exposure dose is 120-160mj/cm
2
4. method according to claim 1 is characterized in that, among the step a, and circular, the square or striated of being shaped as of mask.
5. method according to claim 1 is characterized in that, among the step b, etching condition also comprises: temperature 20-130 ℃, pressure is 2-8mTorr, and etching gas is BCl
3With Cl
2Mist, the flow of mist is 40-55sccm, etch period is 3-10min.
6. method according to claim 5 is characterized in that, in the mist, and BCl
3Flow be 32-40sccm, Cl
2Flow be 8-15sccm.
7. method according to claim 1 is characterized in that, among the step c, the step of metal-organic chemical vapor deposition equipment comprises: reacting gas is trimethyl gallium and NH
3, carrier gas is H
2, earlier under 520 ℃ on Sapphire Substrate growth regulation one deck, then under 1000-1060 ℃ on ground floor the continued growth second layer, form said epitaxial loayer.
8. method according to claim 7 is characterized in that, among the step c, the condition of metal-organic chemical vapor deposition equipment comprises: pressure is 100torr; The flow of trimethyl gallium is 40-120 μ mol/min during growth regulation one deck, NH
3Flow be 0.1-0.3mol/min; The flow of trimethyl gallium is 40-120 μ mol/min during the growth second layer, NH
3Flow be 0.2-0.6mol/min.
9. method according to claim 1 is characterized in that, in the steps d, also comprises epitaxial loayer upper surface bonding Si or the Cu substrate step of vacuum suction bubble afterwards.
10. method according to claim 1 is characterized in that, in the steps d, the condition of laser lift-off comprises: optical maser wavelength is 248nm, and energy density is 400mJ/cm
2, spot size is 0.5mm * 0.5mm, and pulse duration is 30ns, and irradiation time is 5-10s.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103367209A (en) * | 2013-07-26 | 2013-10-23 | 东莞市中镓半导体科技有限公司 | Liquid assisted laser lift-off method |
| CN104201254A (en) * | 2014-07-31 | 2014-12-10 | 华灿光电(苏州）有限公司 | Manufacturing method of light-emitting diode chip provided with omnidirectional reflector (ODR) |
| CN107623059A (en) * | 2017-08-31 | 2018-01-23 | 西安交通大学 | A kind of composite transferring substrat structure and preparation technology for reducing laser lift-off energy threshold |
| CN109887878A (en) * | 2019-02-28 | 2019-06-14 | 保定中创燕园半导体科技有限公司 | A method of recycling graphical sapphire substrate |
| CN110610852A (en) * | 2019-09-27 | 2019-12-24 | 扬州扬杰电子科技股份有限公司 | Method for removing residual glue on metal surface |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1797795A (en) * | 2004-12-27 | 2006-07-05 | 北京大学 | Method for preparing LED chip with 2D natural scattered faces for outputting light |
| US20070240631A1 (en) * | 2006-04-14 | 2007-10-18 | Applied Materials, Inc. | Epitaxial growth of compound nitride semiconductor structures |
| CN101471404A (en) * | 2007-12-27 | 2009-07-01 | 深圳市方大国科光电技术有限公司 | Method for improving chip light-emitting efficiency and method for preparing sapphire graphical substrate |
| CN101800276A (en) * | 2010-01-05 | 2010-08-11 | 山西乐百利特科技有限责任公司 | High-efficiency LED chip |
-
2011
- 2011-04-22 CN CN201110101453XA patent/CN102751397A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1797795A (en) * | 2004-12-27 | 2006-07-05 | 北京大学 | Method for preparing LED chip with 2D natural scattered faces for outputting light |
| US20070240631A1 (en) * | 2006-04-14 | 2007-10-18 | Applied Materials, Inc. | Epitaxial growth of compound nitride semiconductor structures |
| CN101471404A (en) * | 2007-12-27 | 2009-07-01 | 深圳市方大国科光电技术有限公司 | Method for improving chip light-emitting efficiency and method for preparing sapphire graphical substrate |
| CN101800276A (en) * | 2010-01-05 | 2010-08-11 | 山西乐百利特科技有限责任公司 | High-efficiency LED chip |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103367209A (en) * | 2013-07-26 | 2013-10-23 | 东莞市中镓半导体科技有限公司 | Liquid assisted laser lift-off method |
| CN103367209B (en) * | 2013-07-26 | 2015-11-25 | 东莞市中镓半导体科技有限公司 | A kind of liquid auxiliary laser stripping means |
| CN104201254A (en) * | 2014-07-31 | 2014-12-10 | 华灿光电(苏州）有限公司 | Manufacturing method of light-emitting diode chip provided with omnidirectional reflector (ODR) |
| CN104201254B (en) * | 2014-07-31 | 2018-08-17 | 华灿光电(苏州）有限公司 | A kind of preparation method for the light-emitting diode chip for backlight unit having full-shape speculum |
| CN107623059A (en) * | 2017-08-31 | 2018-01-23 | 西安交通大学 | A kind of composite transferring substrat structure and preparation technology for reducing laser lift-off energy threshold |
| CN107623059B (en) * | 2017-08-31 | 2019-08-23 | 西安交通大学 | A kind of composite transferring substrat structure and preparation process reducing laser lift-off energy threshold |
| CN109887878A (en) * | 2019-02-28 | 2019-06-14 | 保定中创燕园半导体科技有限公司 | A method of recycling graphical sapphire substrate |
| CN110610852A (en) * | 2019-09-27 | 2019-12-24 | 扬州扬杰电子科技股份有限公司 | Method for removing residual glue on metal surface |
| CN116682901A (en) * | 2023-06-21 | 2023-09-01 | 惠科股份有限公司 | Light emitting component, manufacturing method of light emitting component, light emitting chip and display panel |
| CN116682912A (en) * | 2023-06-21 | 2023-09-01 | 惠科股份有限公司 | Light emitting chip, display panel, light emitting assembly and manufacturing method thereof |
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Application publication date: 20121024 |