CN102707836A - Single-layer ITO (indium tin oxide) wiring structure - Google Patents
Single-layer ITO (indium tin oxide) wiring structure Download PDFInfo
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- CN102707836A CN102707836A CN2012101300485A CN201210130048A CN102707836A CN 102707836 A CN102707836 A CN 102707836A CN 2012101300485 A CN2012101300485 A CN 2012101300485A CN 201210130048 A CN201210130048 A CN 201210130048A CN 102707836 A CN102707836 A CN 102707836A
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Abstract
The invention relates to a single-layer ITO (indium tin oxide) wiring structure. A plurality of electrode blocks are disposed on a single ITO layer and respectively arrayed in a staggered manner to form a plurality of longitudinal rows and a plurality of longitudinal columns, an upper rectangular wave row and a lower rectangular wave row with equal amplitudes encircle to form each electrode block, the directions of the upper rectangular wave row and the lower rectangular wave row of each electrode block are opposite, gaps are formed between each upper rectangular wave row and the corresponding lower rectangular wave row, and the length of each gap is identical to that of the crest of each upper rectangular wave row and the length of the trough of each lower rectangular wave row. The single-layer ITO wiring structure is simple, and capacitance and signal strength during contact can be guaranteed, so that the single-layer ITO wiring structure is more stable when used for touch detection. In addition, the wiring structure is better in scribing effect as compared with a traditional wiring structure.
Description
Technical field
The present invention relates to the wire structures of a kind of ITO, the wire structures of especially a kind of individual layer ITO.
Background technology
So-called ITO (indium tin oxide) is a kind of critical material that is used to produce LCD, and at present, it has all had in fields such as instrument and meter, computing machine, electronic watch, game machine and household electrical appliance very widely uses.The capacitive touch screen of big heat also is to utilize ITO to accomplish the action that detecting touches on the market in recent years; And the wiring of ITO generally is double-deck on the capacitance touch screen; Its cardinal principle is: utilize people's bulk electric field; When the user touched, the mutual capacitance (also claiming coupling capacitance) of the infall sensing unit of surface row or row can change, and finally can detect the particular location of touch point according to above-mentioned variation.
Because the price of ITO own is more expensive, and the technology that two-layer ITO is laid on the touch screen is comparatively complicated, therefore utilizes the touch screen of individual layer ITO not only on price, to have more advantage, and comparatively simple process steps has also become a megatrend of touch screen future development.Present stage, the Butut of the ITO that is adopted on the individual layer touch screen generally is a triangle.For this structure; Owing to be to form one group of electrode group through two symmetrical triangular shapes to be laid in respectively on the ITO layer; So the size to said touch screen just has certain restriction; Along with successively decreasing gradually of triangular angles, the position of touch object such as finger touches just can not be differentiated fast, thereby can accurately not judge the particular location coordinate of touch point; Moreover the layout of this kind structure also exists touch detection instability, power supply noise to disturb problem big, the setting-out poor effect.
Therefore being necessary for users provides a kind of conventional monolayers ITO wire structures that can improve to detect problem of unstable, and can improve the wire structures of electrode sensing capability.
Summary of the invention
The individual layer ITO wire structures of electrode sensing capability is more stablized and can improve to structure when technical matters to be solved by this invention provided a kind of the detecting.
To achieve these goals; The present invention provides the wire structures of a kind of individual layer ITO; Said individual layer ITO is provided with some electrode blocks, is staggered respectively to form some stringers and file, and the shape of said electrode block is to be surrounded by amplitudes such as upper and lower two rows, square wave sealing in the opposite direction; Saidly go up row's square wave and form the space between row's square wave down, and the wave crest length of the length in said space and last row's square wave and following to arrange the trough length of square wave identical.
Compared with prior art, the wire structures of individual layer ITO according to the invention is not only simple, and electric capacity and signal intensity can guarantee to touch the time, makes it more stable when touch detection; Moreover, the wire structures that the present invention adopted, its line effect is better than tradition.
Description of drawings
Fig. 1 is first kind of electrode structure synoptic diagram according to the invention;
Fig. 2 is according to first kind of individual layer ITO wire structures synoptic diagram according to the invention;
Fig. 3 is according to second kind of electrode structure synoptic diagram according to the invention;
Fig. 4 is according to second kind of individual layer ITO wire structures synoptic diagram according to the invention.
Specific embodiment
Below in conjunction with accompanying drawing and embodiment the present invention is further described.
Please refer to shown in Figure 1ly, the present invention relates to the wire structures of a kind of individual layer ITO, said individual layer ITO 1 is provided with some electrode blocks 10, forms some stringers and file, and promptly each stringer or file are formed by a plurality of touch-control electrode blocks 10.The shape of said electrode block 10 is to be surrounded by amplitudes such as upper and lower two rows, symmetrical square wave sealing in the opposite direction; The wherein said row of going up square wave is 101; Under to arrange square wave be 102, and the said row's of going up square wave 101 with form space 100 between row's square wave 102 down, its length is represented with " a ".See that in one direction the shape of said electrode block 10 roughly is made up of " soil " word shape, can regard as by " soil " word shape and form, also can regard as by several " soil " word shapes and connect to form.The length of crest and the trough of any row's square wave is different in the said electrode block 10, on arrange the length of the length at trough place in the square wave 101 greater than the crest place, and time arrange the length of the length at square wave 102 medium wave peak places greater than the trough place.
Please refer to shown in Figure 2; When said individual layer ITO connects up; Electrode block 10 is staggered respectively and forms some stringers and file; In promptly any adjacent two column electrode pieces 10, if the then corresponding respectively crest place that the following row's square wave 102 in adjacent this column electrode piece 10 is set, the row of the going up square wave 101 crest places in a certain column electrode piece 10, as if the then corresponding respectively trough place of arranging square wave 102 in adjacent this column electrode piece 10 down that is provided with, the row of the going up square wave 101 trough places in the said a certain column electrode piece 10; In like manner; If the then corresponding respectively row's of going up square wave 101 crests that are provided with in adjacent this column electrode piece 10 in the following row's square wave 102 crest places in a certain column electrode piece 10, if the then corresponding respectively trough place that the row's of going up square wave 101 in adjacent this column electrode piece 10 is set, the following row's square wave 102 trough places in the said a certain column electrode piece 10.The length " a " in space 100 is identical with the wave crest length " A " of last row's square wave 101 in said every column electrode piece 10, and simultaneously, the length " a " in space 100 is also identical with the trough length " A " of arranging square wave 102 down in every column electrode piece 10.Through above-mentioned electrode wiring structure, electric capacity in the time of can guaranteeing to touch and signal intensity make it more stable when touch detection.In wire structures shown in Figure 2, compact more in order to make its Butut, said first row is the half the of electrode block 10 with last provisional capital, so since, also improved the detecting sensitivity and the linearity of said ITO layer 1.
The present invention is not limited to the foregoing description, in order to reach above-mentioned identical effect, can make improvement to the electrode of said individual layer ITO; As shown in Figure 3; The shape of said electrode block 11 is to be surrounded by amplitudes such as upper and lower two rows, asymmetric square wave sealing in the opposite direction, and the wherein said row of going up square wave is 111, and following row's square wave is 112; And form space 110 between the said row's of going up square wave 111 and the following row's square wave 112, its length is with " a " expression.See that in one direction the shape of said electrode block 11 roughly is made up of " protruding " word shape, can regard as by " protruding " word shape and form, also can regard as by several " protruding " word shapes and connect to form.The length of crest and the trough of any row's square wave is different in the said electrode block 11, on arrange square wave 111 the length at trough place greater than the length at crest place, and the length at crest place of time arranging square wave 112 is greater than the length at trough place.
Please refer to shown in Figure 4; When said individual layer ITO connects up; Electrode block 11 also is to be staggered respectively to form some stringers and file, and crest, the trough place of upper and lower row's square wave of any delegation electrode block are arranged on crest, the trough place of the upper and lower row's square wave that is adjacent the column electrode piece respectively among the promptly said individual layer ITO.The length " a " in space 110 is identical with the wave crest length " A " of last row's square wave 111 in said every column electrode piece 11, and simultaneously, the length " a " in space 110 is also identical with the trough length " A " of arranging square wave 112 down in every column electrode piece 10.
No matter above-mentioned is that the wire structures of said individual layer ITO is not only simple among first embodiment or second embodiment, and electric capacity and signal intensity can guarantee to touch the time, makes it more stable when touch detection; Moreover, the wire structures that the present invention adopted, its line effect is better, the power supply noise interference is also less, therefore is worthy of popularization.
Claims (8)
1. the wire structures of an individual layer ITO; Said individual layer ITO is provided with some electrode blocks; Be staggered respectively and form some stringers and file; It is characterized in that: the shape of said electrode block is to be surrounded by amplitudes such as upper and lower two rows, square wave in the opposite direction sealing, the said row of going up square wave with form the space between row's square wave down, and the wave crest length of the length in said space and last row's square wave and following to arrange the trough length of square wave identical.
2. the wire structures of individual layer ITO according to claim 1, it is characterized in that: the shape of said electrode block is to be surrounded, and roughly be made up of " soil " word shape by amplitudes such as upper and lower two rows, symmetrical square wave sealing in the opposite direction.
3. like the wire structures of the said individual layer ITO of claim 2, it is characterized in that: said electrode block can be made up of " soil " word shape, also can be connected to form by several " soil " word shapes.
4. the wire structures of individual layer ITO according to claim 1, it is characterized in that: the shape of said electrode block is to be surrounded by amplitudes such as upper and lower two rows, asymmetric square wave sealing in the opposite direction, and the shape of said electrode block roughly is made up of " protruding " word shape.
5. the wire structures of individual layer ITO as claimed in claim 4 is characterized in that: said electrode block can be made up of " protruding " word shape, also can be connected to form by several " protruding " word shapes.
6. the wire structures of individual layer ITO according to claim 1; It is characterized in that: the length of the crest of any row's square wave and trough is different in the said electrode block; Last length of arranging the length at trough place in the square wave greater than the crest place, and arrange the length of the length at square wave medium wave peak place down greater than the trough place.
7. the wire structures of individual layer ITO according to claim 1 is characterized in that: crest, the trough place of upper and lower row's square wave of delegation's electrode block are arranged on crest, the trough place of the upper and lower row's square wave that is adjacent the column electrode piece respectively arbitrarily among the said individual layer ITO.
8. the wire structures of individual layer ITO according to claim 1 is characterized in that: the electrode block that is positioned at said individual layer ITO edge is the half the of said electrode block.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101300485A CN102707836A (en) | 2012-04-28 | 2012-04-28 | Single-layer ITO (indium tin oxide) wiring structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101300485A CN102707836A (en) | 2012-04-28 | 2012-04-28 | Single-layer ITO (indium tin oxide) wiring structure |
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| CN102707836A true CN102707836A (en) | 2012-10-03 |
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| CN2012101300485A Pending CN102707836A (en) | 2012-04-28 | 2012-04-28 | Single-layer ITO (indium tin oxide) wiring structure |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104375692A (en) * | 2013-08-14 | 2015-02-25 | 海帝士科技公司 | Matrix switching type touch panel |
| CN104866131A (en) * | 2014-02-26 | 2015-08-26 | 海帝士科技公司 | Matrix switching type touch panel |
| WO2017004846A1 (en) * | 2015-07-06 | 2017-01-12 | 武汉华星光电技术有限公司 | Liquid crystal display with touch control function, and conducting layer structure thereof |
| CN106547413A (en) * | 2015-09-21 | 2017-03-29 | 矽创电子股份有限公司 | Capacitive touch device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102081479A (en) * | 2010-12-23 | 2011-06-01 | 友达光电股份有限公司 | Touch display panel and touch panel |
| CN102292694A (en) * | 2009-01-21 | 2011-12-21 | Lg伊诺特有限公司 | Input apparatus |
| CN102364414A (en) * | 2011-10-26 | 2012-02-29 | 苏州瀚瑞微电子有限公司 | Single-layer indium tin oxide (ITO) wiring structure |
-
2012
- 2012-04-28 CN CN2012101300485A patent/CN102707836A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102292694A (en) * | 2009-01-21 | 2011-12-21 | Lg伊诺特有限公司 | Input apparatus |
| CN102081479A (en) * | 2010-12-23 | 2011-06-01 | 友达光电股份有限公司 | Touch display panel and touch panel |
| CN102364414A (en) * | 2011-10-26 | 2012-02-29 | 苏州瀚瑞微电子有限公司 | Single-layer indium tin oxide (ITO) wiring structure |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104375692A (en) * | 2013-08-14 | 2015-02-25 | 海帝士科技公司 | Matrix switching type touch panel |
| US9933898B2 (en) | 2013-08-14 | 2018-04-03 | Hydis Technologies, Co., Ltd. | Matrix switching type touch panel |
| CN104375692B (en) * | 2013-08-14 | 2019-05-10 | 海帝士科技公司 | Inverse problem formula touch panel |
| CN104866131A (en) * | 2014-02-26 | 2015-08-26 | 海帝士科技公司 | Matrix switching type touch panel |
| CN104866131B (en) * | 2014-02-26 | 2018-09-25 | 海帝士科技公司 | Inverse problem formula touch panel |
| WO2017004846A1 (en) * | 2015-07-06 | 2017-01-12 | 武汉华星光电技术有限公司 | Liquid crystal display with touch control function, and conducting layer structure thereof |
| CN106547413A (en) * | 2015-09-21 | 2017-03-29 | 矽创电子股份有限公司 | Capacitive touch device |
| CN106547413B (en) * | 2015-09-21 | 2020-03-10 | 矽创电子股份有限公司 | Capacitive touch device |
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Application publication date: 20121003 |