CN102693952B - A kind of encapsulating structure of TVS diode and manufacture method - Google Patents
A kind of encapsulating structure of TVS diode and manufacture method Download PDFInfo
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- CN102693952B CN102693952B CN201110071802.8A CN201110071802A CN102693952B CN 102693952 B CN102693952 B CN 102693952B CN 201110071802 A CN201110071802 A CN 201110071802A CN 102693952 B CN102693952 B CN 102693952B
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- tvs diode
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- conducting strip
- diode chip
- lead frame
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
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Abstract
The invention discloses a kind of encapsulating structure of TVS diode, comprising: lead frame, comprise lead frame body and the first pin; TVS diode chip, the two poles of the earth of this TVS diode chip are positioned at the front and back of TVS diode chip, and described TVS diode chip is positioned on the loading end of lead frame body, and the back side of TVS diode chip is electrically connected with the loading end of lead frame body; Conducting strip, described conducting strip comprises conducting strip body and the second pin, and described conducting strip body is arranged at TVS diode chip front side and is electrically connected with TVS diode chip front side, and the second pin is electrically connected with described first pin; TVS diode chip, lead frame body and conducting strip are all sealed in resin.And the manufacture method of TVS diode.Owing to adopting two-part structure, make, when follow-up pruning/bend the first pin, to reduce the stress that TVS diode chip receives, improve the product reliability of TVS diode, and extend the TVS diode life-span.
Description
Technical field
The present invention relates to the manufacturing technology field of semiconductor device, is specifically related to a kind of encapsulating structure and manufacture method of TVS diode.
Background technology
Transient voltage suppressor diode (TransientVoltageSuppressor) is called for short TVS diode, is a kind of high-effect protection device of diode form.When the two poles of the earth of TVS diode are subject to reverse transient state high energy impact events, it can make its impedance suddenly reduce with high speed (being up to the negative 12 power second-times of 10), simultaneously stability big current, voltage clamp between its two ends is numerically predetermined at one, thus guarantee that circuit element below damages from the high-octane impact of transient state.
At present, in block TVS diode production technology, the electrode of TVS diode adopts the conducting strip of one to be drawn by the signal of telecommunication, and its production procedure is: welding, pressing mold, and T/F(prunes/bending) shaping, baking, test, QC checks, warehouse-in.Concrete steps are spot printing tin creams on the lead frames, and loaded by TVS diode crystal grain, then spot printing tin cream on TVS diode, is fixedly connected electrically in conducting strip in TVS diode, then are combined by mould and put into soldering furnace and weld; Then pressing mold station pressing mold is sent; Enter T/F process after pressing mold, namely pin pruning and bending are carried out to the pressing mold semi-finished product be cascaded, become single molding massive TVS diode; Toast with high temperature again, then carry out testing electrical property and inspection, finally put in storage.To prune due to T/F process and bending can make block TVS be impacted and produce stress, so that drive bonding pad in pin end colloid, easily cause TVS diode crystal grain impaired, thus cause the reliability of product to reduce and useful life not long.
Summary of the invention
The present invention is for solving in prior art in TVS diode production technology owing to prune and bending can make block TVS diode be impacted and produce stress, so that drive bonding pad in pin end colloid, cause the problem that crystal grain is easily impaired, thus provide a kind of significantly slowing down owing to pruning and bending encapsulating structure and the manufacture method of bringing the TVS diode of impulsive force.
For solving the problems of the technologies described above, the invention provides following technical scheme:
An encapsulating structure for TVS diode, comprising: lead frame, comprises lead frame body and the first pin; TVS diode chip, the two poles of the earth of this TVS diode chip are positioned at the front and back of TVS diode chip, and described TVS diode chip is positioned on the loading end of lead frame body, and the back side of TVS diode chip is electrically connected with the loading end of lead frame body; Conducting strip, described conducting strip comprises conducting strip body and the second pin, and described conducting strip body is arranged at TVS diode chip front side and is electrically connected with TVS diode chip front side, and the second pin is electrically connected with described first pin; TVS diode chip, lead frame body and conducting strip are all sealed in resin.
The present invention also provides a kind of manufacture method of TVS diode, comprises the following steps: step one: provide lead frame, and this lead frame comprises lead frame body and the first pin; Step 2: TVS diode chip is placed also fixing electrical connection on lead frame body; Step 3: conducting strip is provided, described conducting strip comprises conducting strip body and the second pin; Step 4: fixed by conducting strip body and be connected electrically on TVS diode chip, is electrically connected described second pin with described first pin; Step 5: TVS diode chip, lead frame body and conducting strip are all sealed in resin, and prune/bend the first pin.
Compared with prior art, the present invention has following beneficial effect: the encapsulating structure of a kind of TVS diode provided by the invention and manufacture method, TVS diode chip front side electrode is electrically connected with the first pin by conducting strip body and the second pin, such employing two-part structure, make when follow-up pruning/bend the first pin, reduce the stress that TVS diode chip receives, improve the product reliability of TVS diode, and extend the TVS diode life-span.
Accompanying drawing explanation
Fig. 1 is lead frame structure schematic diagram in the embodiment of the present invention.
Fig. 2 in the embodiment of the present invention, lead frame is placed TVS diode chip schematic diagram.
Fig. 3, in the embodiment of the present invention, TVS diode chip places conducting strip schematic diagram.
Fig. 4 is that embodiment of the present invention lead frame is sealed in schematic diagram in resin.
Fig. 5 is the TVS diode schematic diagram after the embodiment of the present invention is pruned/bent.
Embodiment
In order to make technical problem solved by the invention, technical scheme and beneficial effect clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
Fig. 3, in the embodiment of the present invention, TVS diode chip places conducting strip schematic diagram, can be clearly seen that the encapsulating structure of TVS diode, comprising: lead frame 10, comprises lead frame body 12 and the first pin 11; TVS diode chip, as shown in TVS diode chip 20 in Fig. 2, the two poles of the earth of this TVS diode chip 20 are positioned at the front and back of TVS diode chip, described TVS diode chip 20 is positioned on the loading end of lead frame body 12, and the back side of TVS diode chip 20 is electrically connected with the loading end of lead frame body 12; Conducting strip 30, described conducting strip 30 comprises conducting strip body 32 and the second pin 31, and described conducting strip body 32 is arranged at TVS diode chip 20 front and is electrically connected with TVS diode chip 20 front, and the second pin 31 is electrically connected with described first pin 11; Conducting strip body 32 and the unconnected one side of TVS diode chip 20 are provided with plurality of grooves 33, can increase heat sinking function.TVS diode 20, lead frame body 12 and conducting strip 30 are all sealed in resin 40, as shown in Figure 4.TVS diode chip front side electrode is electrically connected with the first pin by conducting strip body and the second pin, such employing two-part structure, make when follow-up pruning/bend the first pin, reduce the stress that TVS diode chip receives, improve the product reliability of TVS diode, and extend the TVS diode life-span.
In the present embodiment, the thickness of conducting strip body 32 is greater than the thickness of the second pin 31, and the thickness of conducting strip body 32 is 4 to 5 millimeters, and the thickness of the second pin 31 is 0.7 to 1 millimeter.The thickness of the conducting strip body 32 contacted with TVS diode 20 is thicker, can well dispel the heat, and the second pin 31 is relatively thin, and the thickness of final encapsulation can be made to meet the requirements.This conducting strip 30 generally selects copper sheet, and the second pin 31 is at least one, is preferably two; The stress reduced when pruning/bending between the first pin and the second pin can be made, make it better connect.The back side of TVS diode chip and the loading end of lead frame body, TVS diode front and TVS diode front, described second pin and the first pin, be all electrically connected by scolding tin.
The manufacture method of TVS diode is below described, comprises the following steps:
Step one: provide lead frame 10, as shown in Figure 1, lead frame structure schematic diagram in the embodiment of the present invention, this lead frame 10 comprises lead frame body 12 and the first pin 11, if this first pin 11 is not connected with lead frame body 12 after shearing.
Step 2: TVS diode chip is placed also fixing electrical connection on lead frame body, Fig. 2 in the embodiment of the present invention, lead frame is placed TVS diode chip schematic diagram, the two poles of the earth of this TVS diode chip 20 are positioned at the front and back of TVS diode chip 20, TVS diode chip 20 is positioned on the loading end of lead frame body 12, and the back side of TVS diode chip 20 is electrically connected with the loading end of lead frame body 12; The method can direct spot printing tin cream on the loading end of lead frame body 12, is then aimed at by TVS diode chip 20 and is placed on the loading end of lead frame body 12.
Step 3: provide conducting strip, described conducting strip comprises conducting strip body and the second pin, and conducting strip body 32 second pin 31 of this conducting strip 30 is connected.
Step 4: fixed by conducting strip body and be connected electrically on TVS diode chip, is electrically connected described second pin with described first pin; Fig. 3, in the embodiment of the present invention, TVS diode chip places conducting strip schematic diagram, by TVS diode chip 20 front spot printing tin cream, spot printing tin cream on the first pin 11 and the second pin 31 simultaneously, then conducting strip body 32 to be aimed at by TVS diode chip 20 front and above being placed on, and the first pin 11 and the second pin 31 that have been coated with tin cream are overlapped, then entirety is put into reflow soldering and carry out Reflow Soldering, by the part firm welding of spot printing tin cream.Conducting strip body 32 and the unconnected one side of TVS diode chip 20 are provided with plurality of grooves 33, can increase heat sinking function.
Step 5: TVS diode chip, lead frame body and conducting strip are all sealed in resin, and prune/bend the first pin.Fig. 4 is that embodiment of the present invention lead frame is sealed in schematic diagram in resin, the TVS diode chip 20 of firm welding, conducting strip 30 and lead frame 10 are sent mould to seal machine to encapsulate, general resin-encapsulated, toasts after installing in high-temperature cabinet, carries out pruning/bending cutting on golden bending machine afterwards, plating, testing electrical property, inspection, obtains single TVS diode, Fig. 5 is the TVS diode schematic diagram after the embodiment of the present invention is pruned/bent, and shell 40 is packaged resin.The method for packing of such employing two-part structure, makes, when follow-up pruning/bend the first pin, to reduce the stress that TVS diode chip receives, improve the product reliability of TVS diode, and extend the TVS diode life-span.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (11)
1. an encapsulating structure for TVS diode, is characterized in that, comprising:
Lead frame, comprises lead frame body and the first pin;
TVS diode chip, the two poles of the earth of this TVS diode chip are positioned at the front and back of TVS diode chip, and described TVS diode chip is positioned on the loading end of lead frame body, and the back side of TVS diode chip is electrically connected with the loading end of lead frame body;
Conducting strip, described conducting strip comprises conducting strip body and the second pin, and described conducting strip body is arranged at TVS diode chip front side and is electrically connected with TVS diode chip front side, and the second pin is electrically connected with described first pin; Described conducting strip body and the unconnected one side of TVS diode chip are provided with plurality of grooves; Described first pin prunes/bending, and after pruning, described first pin is not connected with described lead frame body;
TVS diode chip, lead frame body and conducting strip are all sealed in resin.
2. the encapsulating structure of TVS diode according to claim 1, is characterized in that, the thickness of described conducting strip body is greater than the thickness of the second pin.
3. the encapsulating structure of TVS diode according to claim 2, is characterized in that, the thickness of described conducting strip body is 4 to 5 millimeters.
4. the encapsulating structure of TVS diode according to claim 2, is characterized in that, the thickness of described second pin is 0.7 to 1 millimeter.
5. the encapsulating structure of the TVS diode according to any one of Claims 1-4, is characterized in that, described second pin at least one.
6. the encapsulating structure of the TVS diode according to any one of Claims 1-4, is characterized in that, described conducting strip is copper sheet.
7. the encapsulating structure of the TVS diode according to any one of Claims 1-4, it is characterized in that, the back side of TVS diode chip and the loading end of lead frame body, the front of TVS diode chip and conducting strip body, described second pin and the first pin, be all electrically connected by scolding tin.
8. a manufacture method for TVS diode, is characterized in that, comprises the following steps:
Step one: lead frame is provided, this lead frame comprises lead frame body and the first pin;
Step 2: TVS diode chip is placed also fixing electrical connection on lead frame body;
Step 3: conducting strip is provided, described conducting strip comprises conducting strip body and the second pin;
Step 4: fixed by conducting strip body and be connected electrically on TVS diode chip, is electrically connected described second pin with described first pin; Described conducting strip body and the unconnected one side of TVS diode chip arrange plurality of grooves;
Step 5: TVS diode chip, lead frame body and conducting strip are all sealed in resin, and prune/bend the first pin, after pruning, the first pin of described TVS diode chip is not connected with described lead frame body.
9. the manufacture method of TVS diode according to claim 8, is characterized in that, the thickness of described conducting strip body is greater than the thickness of the second pin.
10. the manufacture method of TVS diode according to claim 8, is characterized in that, the thickness of described conducting strip body is 4 to 5 millimeters.
The manufacture method of 11. TVS diode according to claim 8, is characterized in that the thickness of described second pin is 0.7 to 1 millimeter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110071802.8A CN102693952B (en) | 2011-03-24 | 2011-03-24 | A kind of encapsulating structure of TVS diode and manufacture method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110071802.8A CN102693952B (en) | 2011-03-24 | 2011-03-24 | A kind of encapsulating structure of TVS diode and manufacture method |
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| CN102693952A CN102693952A (en) | 2012-09-26 |
| CN102693952B true CN102693952B (en) | 2015-12-09 |
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| CN201110071802.8A Active CN102693952B (en) | 2011-03-24 | 2011-03-24 | A kind of encapsulating structure of TVS diode and manufacture method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103617985A (en) * | 2013-11-08 | 2014-03-05 | 张轩 | Plastic package lead frame with bent heads |
| CN108470684B (en) * | 2018-05-29 | 2021-03-19 | 上海朋熙半导体有限公司 | Semiconductor diode production and manufacturing process |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101356633A (en) * | 2005-11-01 | 2009-01-28 | Nxp股份有限公司 | Methods of packaging a semiconductor die and package formed by the methods |
| CN101673722A (en) * | 2008-09-10 | 2010-03-17 | 日月光半导体制造股份有限公司 | Lead frame |
| CN201601487U (en) * | 2009-10-23 | 2010-10-06 | 张书郎 | Chip type blocky surge protector |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6919625B2 (en) * | 2003-07-10 | 2005-07-19 | General Semiconductor, Inc. | Surface mount multichip devices |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101356633A (en) * | 2005-11-01 | 2009-01-28 | Nxp股份有限公司 | Methods of packaging a semiconductor die and package formed by the methods |
| CN101673722A (en) * | 2008-09-10 | 2010-03-17 | 日月光半导体制造股份有限公司 | Lead frame |
| CN201601487U (en) * | 2009-10-23 | 2010-10-06 | 张书郎 | Chip type blocky surge protector |
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| CN102693952A (en) | 2012-09-26 |
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Effective date of registration: 20191227 Address after: 518119 1 Yanan Road, Kwai Chung street, Dapeng New District, Shenzhen, Guangdong Patentee after: Shenzhen BYD Microelectronics Co., Ltd. Address before: BYD 518118 Shenzhen Road, Guangdong province Pingshan New District No. 3009 Patentee before: Biyadi Co., Ltd. |
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Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. |
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