CN102654975B - AMOLED (active matrix/organic light emitting diode) drive compensation circuit and method and display device thereof - Google Patents
AMOLED (active matrix/organic light emitting diode) drive compensation circuit and method and display device thereof Download PDFInfo
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- CN102654975B CN102654975B CN201110340564.6A CN201110340564A CN102654975B CN 102654975 B CN102654975 B CN 102654975B CN 201110340564 A CN201110340564 A CN 201110340564A CN 102654975 B CN102654975 B CN 102654975B
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3258—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the voltage across the light-emitting element
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0439—Pixel structures
- G09G2300/0465—Improved aperture ratio, e.g. by size reduction of the pixel circuit, e.g. for improving the pixel density or the maximum displayable luminance or brightness
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0819—Several active elements per pixel in active matrix panels used for counteracting undesired variations, e.g. feedback or autozeroing
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
- G09G2300/0861—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor with additional control of the display period without amending the charge stored in a pixel memory, e.g. by means of additional select electrodes
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0876—Supplementary capacities in pixels having special driving circuits and electrodes instead of being connected to common electrode or ground; Use of additional capacitively coupled compensation electrodes
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- Computer Hardware Design (AREA)
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- Control Of El Displays (AREA)
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Abstract
The invention discloses an AMOLED (active matrix/organic light emitting diode) drive compensation circuit and method and a display device thereof, relating to the field of an AMOLED. Through the invention, the aperture ratio can be increased. The drive compensation circuit comprises multiple drive circuits and an external compensation circuit, wherein the drive circuits are arranged in a pixel area and used for driving multiple AMOLEDs; and the external compensation circuit is arranged outside the pixel area and used for eliminating the influence of the threshold voltage of the drive TFTs (thin film transistors) of the drive circuits in the pixel area on the drive current flowing through the drive TFTs. The drive compensation method comprises the following steps of: I, storing the threshold voltage of the drive TFTs of the multiple drive circuits in the pixel area; II, storing the gray-scale voltage of the multiple drive circuits in the pixel area; and III, setting the grid voltage jump of the drive TFTs of the multiple drive circuits in the pixel area as the sum of the threshold voltage and gray-scale voltage. The display device comprises the AMOLED drive compensation circuit.
Description
Technical field
The present invention relates to AMOLED field, relate in particular to a kind of AMOLED and drive compensating circuit, method and display device thereof.
Background technology
Active matrix organic light-emitting diode (AMOLED) panel (Active Matrix Organic Light Emitting Diode, AMOLED) can luminously be that the drive current that the brilliant pipe of driving film in driving circuit produces drives, but, variation along with the time, drive the threshold voltage of thin film transistor (TFT) to change, thereby can cause while inputting identical gray scale voltage, the drive current of generation is inconsistent, thereby makes the brightness of driven AMOLED different.At present, the main method addressing this problem is to add driving compensating circuit, eliminates the impact of threshold voltage, thereby reaches consistent drive current, improves the brightness uniformity of panel.
In realizing process of the present invention, inventor finds that in prior art, at least there are the following problems:
Existing AMOLED drives compensating circuit often to need 5 to 6 thin film transistor (TFT)s to be arranged in same pixel region, so can reduce aperture opening ratio.
Summary of the invention
Embodiments of the invention provide a kind of AMOLED to drive compensating circuit, method and display device thereof, can increase aperture opening ratio.
For achieving the above object, embodiments of the invention adopt following technical scheme:
AMOLED drives a compensating circuit, comprising:
Be arranged on the several driving circuits in pixel region, for driving several AMOLED;
Be arranged on the external compensation circuit outside pixel region, for being arranged on the impact on the drive current by described driving thin film transistor (TFT) of threshold voltage that several driving circuits in pixel region drive thin film transistor (TFT) described in eliminating.
Described each driving circuit being arranged in pixel region comprises: the first film transistor, driving electric capacity, driving thin film transistor (TFT) and AMOLED;
Described the first film transistor, its source electrode connection data line;
Described driving electric capacity, its first end connects the transistorized drain electrode of described the first film;
Described driving thin film transistor (TFT), its grid connects the transistorized drain electrode of described the first film;
Described AMOLED, its input end connects operating voltage output terminal, and its output terminal connects the drain electrode of described driving thin film transistor (TFT);
Described the first film transistor and driving thin film transistor (TFT) are n channel thin-film transistor;
The described external compensation circuit being arranged on outside pixel region comprises: the second thin film transistor (TFT), the 3rd thin film transistor (TFT), building-out capacitor, the 4th thin film transistor (TFT), the 5th thin film transistor (TFT), the 6th thin film transistor (TFT) and the 7th thin film transistor (TFT);
Described the second thin film transistor (TFT), its source ground, its grid connects second clock signal output part, and its drain electrode connects the second end of described driving electric capacity;
Described the 3rd thin film transistor (TFT), its source electrode connects the drain electrode of described the second thin film transistor (TFT), and its grid connects described second clock signal output part;
Described building-out capacitor, its first end connects the drain electrode of described the 3rd thin film transistor (TFT);
Described the 4th thin film transistor (TFT), its source electrode connects the second end of described building-out capacitor, and its grid connects described second clock signal output part, and its drain electrode connects the source electrode of described driving thin film transistor (TFT);
Described the 5th thin film transistor (TFT), its source ground, its grid connects described second clock signal output part, and its drain electrode connects the source electrode of described the 4th thin film transistor (TFT);
Described the 6th thin film transistor (TFT), its source electrode connects reference voltage output terminal, and its grid connects the first clock signal output terminal, and its drain electrode connects the drain electrode of described the second thin film transistor (TFT);
The 7th thin film transistor (TFT), its source electrode connects reference voltage output terminal, and its grid connects the first clock signal output terminal, and its drain electrode connects the grid of described driving thin film transistor (TFT);
The transistorized grid of described the first film connects described second clock signal output part;
Described the second thin film transistor (TFT), the 6th thin film transistor (TFT) and the 7th thin film transistor (TFT) are n channel thin-film transistor;
Described the 3rd thin film transistor (TFT), the 4th thin film transistor (TFT) and the 5th thin film transistor (TFT) are p channel thin-film transistor.
Described the first clock signal and described second clock signal include first stage, subordinate phase and phase III;
First stage, described the first clock signal output terminal is high level, and described second clock signal is low level;
Subordinate phase, described the first clock signal output terminal is low level, described second clock signal is high level;
Phase III, described the first clock signal output terminal is low level, and described second clock signal is low level.
AMOLED drives a compensation method, comprising:
First stage, storage is arranged on the threshold voltage of the driving thin film transistor (TFT) of the several driving circuits in pixel region;
Subordinate phase, is arranged on the gray scale voltage of the several driving circuits in pixel region described in storage;
Phase III, described in be arranged on the driving thin film transistor (TFT) of the several driving circuits in pixel region grid voltage saltus step be described threshold voltage and described gray scale voltage and.
The described first stage, the threshold voltage that storage is arranged on the driving thin film transistor (TFT) of the several driving circuits in pixel region is:
The first clock signal output terminal is high level, second clock signal output part is low level, the 3rd thin film transistor (TFT), the 4th thin film transistor (TFT), the 6th thin film transistor (TFT) and the 7th thin film transistor (TFT) conducting, the first film transistor, the second thin film transistor (TFT) and the cut-off of the 5th thin film transistor (TFT), the voltage difference on building-out capacitor is arranged on the threshold voltage of the driving thin film transistor (TFT) of the several driving circuits in pixel region described in being;
Described subordinate phase, the gray scale voltage that is arranged on the several driving circuits in pixel region described in storage is:
The first clock signal output terminal is low level, second clock signal output part is high level, the 3rd thin film transistor (TFT), the 4th thin film transistor (TFT), the 6th thin film transistor (TFT) and the cut-off of the 7th thin film transistor (TFT), the first film transistor, the second thin film transistor (TFT) and the 5th thin film transistor (TFT) conducting, drive voltage difference on electric capacity be data line input described in be arranged on the gray scale voltage of the several driving circuits in pixel region;
The described phase III, described in be arranged on the driving thin film transistor (TFT) of the several driving circuits in pixel region grid voltage saltus step be described threshold voltage and described gray scale voltage and be:
The first clock signal output terminal is low level, second clock signal output part is low level, the 3rd thin film transistor (TFT), the 4th thin film transistor (TFT) and the 5th thin film transistor (TFT) conducting, the first film transistor, the second thin film transistor (TFT), the 6th thin film transistor (TFT) and the cut-off of the 7th thin film transistor (TFT), described in be arranged on the driving thin film transistor (TFT) of the several driving circuits in pixel region grid voltage saltus step be described threshold voltage and described gray scale voltage with.
A display device, comprises that above-mentioned AMOLED drives compensating circuit.
The AMOLED that the embodiment of the present invention provides drives compensating circuit and method thereof, because external compensation circuit is arranged on outside pixel region, the threshold voltage of the driving thin film transistor (TFT) of the several driving circuits in compensation pixel region simultaneously, in pixel region, only have for driving the driving circuit of AMOLED, thereby can increase aperture opening ratio.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
A kind of AMOLED that Fig. 1 provides for the embodiment of the present invention drives the circuit diagram of compensating circuit;
Fig. 2 is the sequential chart of the clock signal of circuit in Fig. 1;
Fig. 3 be in Fig. 1 circuit at the equivalent circuit diagram of first stage;
Fig. 4 be in Fig. 1 circuit at the equivalent circuit diagram of subordinate phase;
Fig. 5 be in Fig. 1 circuit at the equivalent circuit diagram of phase III;
The another kind of AMOLED that Fig. 6 provides for the embodiment of the present invention drives the circuit diagram of compensating circuit;
A kind of AMOLED that Fig. 7 provides for the embodiment of the present invention drives the process flow diagram of compensation method.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Embodiment based in the present invention, those of ordinary skills, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.
The embodiment of the present invention provides a kind of AMOLED to drive compensating circuit, comprising:
Be arranged on the several driving circuits in pixel region, for driving several AMOLED;
Each driving circuit, as traditional 2T1C (two thin film transistor (TFT)s and an electric capacity) circuit, comprises driving thin film transistor (TFT), by driving the drive current of thin film transistor (TFT) to drive AMOLED luminous.
Be arranged on the external compensation circuit outside pixel region, for eliminating the impact on the drive current by described driving thin film transistor (TFT) of threshold voltage that the several driving circuits that are arranged in pixel region drive thin film transistor (TFT), make by driving the drive current of thin film transistor (TFT) to have nothing to do with driving the threshold voltage of thin film transistor (TFT), thereby improved the consistance of drive current.
Prior art in each pixel region except driving circuit, also need to arrange the compensating circuit that 5 to 6 thin film transistor (TFT)s form, and the AMOLED that the embodiment of the present invention provides drives compensating circuit, because external compensation circuit is arranged on outside pixel region, the threshold voltage of the driving thin film transistor (TFT) of the several driving circuits in compensation pixel region simultaneously, in pixel region, only have for driving the driving circuit of AMOLED, thereby can increase aperture opening ratio.
Particularly, as shown in Figure 1, each driving circuit being arranged in pixel region comprises: the first film transistor T 1, driving capacitor C st, driving thin film transistor (TFT) T8 and AMOLED; Wherein the first film transistor T 1, its source electrode connection data line; Drive capacitor C st, its first end connects the drain electrode of the first film transistor T 1; Drive thin film transistor (TFT) T8, its grid connects the drain electrode of the first film transistor T 1; AMOLED, its anodic bonding operating voltage output terminal, is specially voltage source V DD, and its negative electrode connects the drain electrode that drives thin film transistor (TFT) T8; The first film transistor and driving thin film transistor (TFT) are n channel thin-film transistor.
One-row pixels region comprise n pixel region Pixel_1, Pixel_2 ..., Pixel_n, wherein n is greater than 1 natural number, each driving circuit is separately positioned in each pixel region, the source electrode of n the first film transistor T 1 in n pixel region connect respectively N bar data line Data1, Data2 ..., Datan, wherein n is greater than one natural number.
The external compensation circuit being arranged on outside pixel region comprises: the second thin film transistor (TFT) T2, the 3rd thin film transistor (TFT) T3, building-out capacitor Cth, the 4th thin film transistor (TFT) T4, the 5th thin film transistor (TFT) T5, the 6th thin film transistor (TFT) T6 and the 7th thin film transistor (TFT) T7; The second thin film transistor (TFT) T2 wherein, its source ground, its grid connects second clock signal output part C1, and its drain electrode connects the second end that drives capacitor C st; The 3rd thin film transistor (TFT) T3, its source electrode connects the drain electrode of the second thin film transistor (TFT) T2, and its grid connects second clock signal output part C1; Building-out capacitor Cth, its first end connects the drain electrode of the 3rd thin film transistor (TFT) T3; The 4th thin film transistor (TFT) T4, its source electrode connects the second end of building-out capacitor Cth, and its grid connects second clock signal output part C1, and its drain electrode connects the source electrode that drives thin film transistor (TFT) T8; The 5th thin film transistor (TFT) T5, its source ground, its grid connects second clock signal output part C1, and its drain electrode connects the source electrode of the 4th thin film transistor (TFT) T4; The 6th thin film transistor (TFT) T6, its source electrode connects reference voltage output terminal VREF, and its grid connects the first clock signal output terminal G1, and its drain electrode connects the drain electrode of the second thin film transistor (TFT) T2; The 7th thin film transistor (TFT) T7, its source electrode connects reference voltage output terminal VREF, and its grid connects the first clock signal output terminal G1, and its drain electrode connects the grid that drives thin film transistor (TFT) T8; The grid of the first film transistor T 1 connects second clock signal output part C1; The second thin film transistor (TFT) T2, the 6th thin film transistor (TFT) T6 and the 7th thin film transistor (TFT) T7 are n channel thin-film transistor; The 3rd thin film transistor (TFT) T3, the 4th thin film transistor (TFT) T4 and the 5th thin film transistor (TFT) T5 are p channel thin-film transistor.
Further, as shown in Figure 2, the first clock signal G1 and second clock signal C1 include first stage H1, subordinate phase H2 and phase III H3; First stage H1, the first clock signal output terminal G1 is high level, second clock signal C1 is low level; Subordinate phase H2, the first clock signal output terminal G1 is low level, second clock signal C1 is high level; Phase III H3, the first clock signal output terminal G1 is low level, second clock signal C1 is low level.
Below by the charging process of one-row pixels, describe this programme in detail, as shown in Figure 1, definition: the first end that building-out capacitor Cth is connected with the 3rd thin film transistor (TFT) T3 is first node A: the second end that building-out capacitor Cth is connected with the 4th thin film transistor (TFT) is Section Point B; The first end that drives capacitor C st to be connected with the first film transistor T 1 is the 3rd node C, and the second end that drives capacitor C st to be connected with the second thin film transistor (TFT) T2 is the 4th node D.
First stage H1 is pre-charging stage, now, the first clock signal output terminal G1 is high level, second clock signal output part C1 is low level, the 3rd thin film transistor (TFT) T3, the 4th thin film transistor (TFT) T4, the 6th thin film transistor (TFT) T6 and the 7th thin film transistor (TFT) T7 conducting, the first film transistor T 1, the second thin film transistor (TFT) T2 and the 5th thin film transistor (TFT) T5 cut-off, now circuit equivalent is circuit as shown in Figure 3, reference voltage output terminal VREF charges to building-out capacitor, the voltage that makes first node A is the reference voltage Vref on reference voltage output terminal VREF, the voltage of Section Point B is the poor of reference voltage Vref and the threshold voltage vt h that drives thin film transistor (TFT) T8, for Vref-Vth, namely the voltage difference on building-out capacitor Cth is for driving the threshold voltage vt h of thin film transistor (TFT) T8, it should be noted that, driving thin film transistor (TFT) T8 in above-mentioned one-row pixels region need to adopt identical technique to make, identical to guarantee the threshold voltage of each the driving thin film transistor (TFT) T8 in this journey, be all Vth.
Subordinate phase H2 is gray scale voltage input phase, now, the first clock signal output terminal G1 is low level, second clock signal output part C1 is high level, the 3rd thin film transistor (TFT) T3, the 4th thin film transistor (TFT) T4, the 6th thin film transistor (TFT) T6 and the 7th thin film transistor (TFT) T7 cut-off, the first film transistor T 1, the second thin film transistor (TFT) T2 and the 5th thin film transistor (TFT) T5 conducting, now circuit equivalent is circuit as shown in Figure 4, the principle of work of driving circuit in a pixel region Pixel_1 of take is below example explanation this programme, data line Data1 is to driving capacitor C st charging, the voltage that makes the 3rd node C is the gray scale voltage Vdata1 of data line Data1 input, the voltage of the 4th node D is zero, namely driving the voltage difference on capacitor C st is the gray scale voltage Vdata1 of data line Data1 input.
Phase III H3 is glow phase, now, the first clock signal output terminal G1 is low level, second clock signal output part C1 is low level, the 3rd thin film transistor (TFT) T3, the 4th thin film transistor (TFT) T4 and the 5th thin film transistor (TFT) T5 conducting, the first film transistor T 1, the second thin film transistor (TFT) T2, the 6th thin film transistor (TFT) T6 and the 7th thin film transistor (TFT) T7 cut-off, now circuit equivalent is circuit as shown in Figure 5, Section Point B ground connection, voltage is zero, due at first stage H1, the voltage difference of the upper storage of building-out capacitor Cth is for driving the threshold voltage vt h of thin film transistor (TFT) T8, therefore at phase III H3, first node A, namely the voltage of the 4th node D is for driving the threshold voltage vt h of thin film transistor (TFT) T8, due at subordinate phase H2, driving the voltage difference on capacitor C st is the gray scale voltage Vdata1 of data line Data1 input, therefore at phase III H3, the voltage jump of the 3rd node C for drive the threshold voltage vt h of thin film transistor (TFT) T8 and the gray scale voltage Vdata1 of data line Data1 input with, for Vth+Vdata1, drive the grid voltage Vgs=Vth+Vdata1 of thin film transistor (TFT) T8, by driving the drive current of thin film transistor (TFT) T8 to be:
I＝k(Vgs-Vth)
2＝k(data1+Vth-Vth)
2＝k(Vdata1)
2，
K=μ eff * Cox * (W/L)/2 wherein, μ eff represents to drive the charge carrier effective mobility of thin film transistor (TFT) T8, and Cox represents to drive the gate insulation layer specific inductive capacity of thin film transistor (TFT) T8, and W/L represents to drive the channel width-over-length ratio of thin film transistor (TFT) T8.
By above-mentioned expression formula, by driving the drive current I of thin film transistor (TFT) T8 irrelevant with its threshold voltage vt h, the impact of the threshold voltage vt h that has eliminated driving thin film transistor (TFT) T8 on the drive current I by described driving thin film transistor (TFT) T8.
Above-mentioned reference voltage output terminal can be also power end VDD.Above-mentioned first stage H1 and subordinate phase H2 time are shorter, and phase III H3 grows and is used for making panel luminescence display.
In prior art, in the expression formula of drive current, conventionally comprise Vdd, problem due to voltage drop (IR Drop), the variation meeting of supply voltage Vdd further affects the real effect of panel, and in the embodiment of the present invention in the expression formula of drive current not containing the supply voltage Vdd of power end VDD, thereby further improve the problem of IR Drop.
In a line, in each pixel region, the principle of work of driving circuit is identical with the principle of work of driving circuit in an above-mentioned pixel region Pixel_1, does not repeat them here.Below only with the charging process of one-row pixels, describe this programme in detail, as shown in Figure 6, corresponding with it external compensation circuit can also be outside multirow pixel region be set respectively and forms AMOLED and drive compensating circuit, comprising: m the first clock signal G1, G2 ..., Gm; M the first clock signal C 1, C2 ..., Cm, wherein m for be greater than one natural number, annexation and the principle of work of AMOLED driving compensating circuit are same as the previously described embodiments, do not repeat them here.
The AMOLED that the embodiment of the present invention provides drives compensating circuit, make to be arranged on the threshold voltage that external compensation circuit outside pixel region compensates the driving thin film transistor (TFT) of several driving circuits in one-row pixels region simultaneously, in pixel region, only have for driving the driving circuit of AMOLED, thereby can increase aperture opening ratio.
The embodiment of the present invention also provides a kind of AMOLED to drive compensation method, and the AMOLED that the method is applied to above-described embodiment and provides drives compensating circuit, as shown in Figure 7, comprising:
Step 101, first stage, storage is arranged on the threshold voltage of the driving thin film transistor (TFT) of the several driving circuits in pixel region;
Step 102, subordinate phase, be arranged on the gray scale voltage of the several driving circuits in pixel region described in storage;
Step 103, phase III, the grid voltage saltus step that is arranged on the driving thin film transistor (TFT) of the several driving circuits in pixel region be threshold voltage and gray scale voltage and.
And the AMOLED that the embodiment of the present invention provides drives compensation method, due to by being arranged on external compensation circuit outside the pixel region threshold voltage of the driving thin film transistor (TFT) of the several driving circuits in compensation pixel region simultaneously, in pixel region, only have for driving the driving circuit of AMOLED, thereby can increase aperture opening ratio.
First stage, the threshold voltage that storage is arranged on the driving thin film transistor (TFT) of the several driving circuits in pixel region is specially:
The first clock signal output terminal is high level, second clock signal output part is low level, the 3rd thin film transistor (TFT), the 4th thin film transistor (TFT), the 6th thin film transistor (TFT) and the 7th thin film transistor (TFT) conducting, the first film transistor, the second thin film transistor (TFT) and the cut-off of the 5th thin film transistor (TFT), the voltage difference on building-out capacitor is the threshold voltage that is arranged on the driving thin film transistor (TFT) of the several driving circuits in pixel region;
Subordinate phase, the gray scale voltage that is arranged on the several driving circuits in pixel region described in storage is specially:
The first clock signal output terminal is low level, second clock signal output part is high level, the 3rd thin film transistor (TFT), the 4th thin film transistor (TFT), the 6th thin film transistor (TFT) and the cut-off of the 7th thin film transistor (TFT), the first film transistor, the second thin film transistor (TFT) and the 5th thin film transistor (TFT) conducting, driving the voltage difference on electric capacity is the gray scale voltage that is arranged on the several driving circuits in pixel region of data line input;
Phase III, the grid voltage saltus step that is arranged on the driving thin film transistor (TFT) of the several driving circuits in pixel region be threshold voltage and gray scale voltage and be specially:
The first clock signal output terminal is low level, second clock signal output part is low level, the 3rd thin film transistor (TFT), the 4th thin film transistor (TFT) and the 5th thin film transistor (TFT) conducting, the first film transistor, the second thin film transistor (TFT), the 6th thin film transistor (TFT) and the cut-off of the 7th thin film transistor (TFT), described in be arranged on the driving thin film transistor (TFT) of the several driving circuits in pixel region grid voltage saltus step be described threshold voltage and described gray scale voltage with.
The AMOLED that the embodiment of the present invention provides drives the concrete principle of work of compensation method same as the previously described embodiments, does not repeat them here.
The threshold voltage that is arranged on the driving thin film transistor (TFT) of the several driving circuits in the external compensation circuit while compensation pixel region outside pixel region, only has in pixel region for driving the driving circuit of AMOLED, thereby can increase aperture opening ratio.
The embodiment of the present invention also provides a kind of display device, comprises that above-mentioned AMOLED drives compensating circuit.Drive compensation method and principle of work same as the previously described embodiments, do not repeat them here.
The threshold voltage that is arranged on the driving thin film transistor (TFT) of the several driving circuits in the external compensation circuit while compensation pixel region outside pixel region, only has in pixel region for driving the driving circuit of AMOLED, thereby can increase aperture opening ratio.
The above; be only the specific embodiment of the present invention, but protection scope of the present invention is not limited to this, is anyly familiar with those skilled in the art in the technical scope that the present invention discloses; can expect easily changing or replacing, within all should being encompassed in protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection domain of described claim.
Claims (4)
1. AMOLED drives a compensating circuit, it is characterized in that, comprising:
Be arranged on the several driving circuits in pixel region, for driving several AMOLED;
Be arranged on the external compensation circuit outside pixel region, for being arranged on the impact on the drive current by described driving thin film transistor (TFT) of threshold voltage that several driving circuits in pixel region drive thin film transistor (TFT) described in eliminating;
Described each driving circuit being arranged in pixel region comprises: the first film transistor, driving electric capacity, driving thin film transistor (TFT) and AMOLED;
Described the first film transistor, its source electrode connection data line;
Described driving electric capacity, its first end connects the transistorized drain electrode of described the first film;
Described driving thin film transistor (TFT), its grid connects the transistorized drain electrode of described the first film;
Described AMOLED, its input end connects operating voltage output terminal, and its output terminal connects the drain electrode of described driving thin film transistor (TFT);
Described the first film transistor and driving thin film transistor (TFT) are n channel thin-film transistor;
The described external compensation circuit being arranged on outside pixel region comprises:
The second thin film transistor (TFT), the 3rd thin film transistor (TFT), building-out capacitor, the 4th thin film transistor (TFT), the 5th thin film transistor (TFT), the 6th thin film transistor (TFT) and the 7th thin film transistor (TFT);
Described the second thin film transistor (TFT), its source ground, its grid connects second clock signal output part, and its drain electrode connects the second end of described driving electric capacity;
Described the 3rd thin film transistor (TFT), its source electrode connects the drain electrode of described the second thin film transistor (TFT), and its grid connects described second clock signal output part;
Described building-out capacitor, its first end connects the drain electrode of described the 3rd thin film transistor (TFT);
Described the 4th thin film transistor (TFT), its source electrode connects the second end of described building-out capacitor, and its grid connects described second clock signal output part, and its drain electrode connects the source electrode of described driving thin film transistor (TFT);
Described the 5th thin film transistor (TFT), its source ground, its grid connects described second clock signal output part, and its drain electrode connects the source electrode of described the 4th thin film transistor (TFT);
Described the 6th thin film transistor (TFT), its source electrode connects reference voltage output terminal, and its grid connects the first clock signal output terminal, and its drain electrode connects the drain electrode of described the second thin film transistor (TFT);
The 7th thin film transistor (TFT), its source electrode connects reference voltage output terminal, and its grid connects the first clock signal output terminal, and its drain electrode connects the grid of described driving thin film transistor (TFT);
The transistorized grid of described the first film connects described second clock signal output part;
Described the second thin film transistor (TFT), the 6th thin film transistor (TFT) and the 7th thin film transistor (TFT) are n channel thin-film transistor;
Described the 3rd thin film transistor (TFT), the 4th thin film transistor (TFT) and the 5th thin film transistor (TFT) are p channel thin-film transistor.
2. AMOLED according to claim 1 drives compensating circuit, it is characterized in that,
Described the first clock signal and described second clock signal include first stage, subordinate phase and phase III;
First stage, described the first clock signal output terminal is high level, and described second clock signal is low level;
Subordinate phase, described the first clock signal output terminal is low level, described second clock signal is high level;
Phase III, described the first clock signal output terminal is low level, and described second clock signal is low level.
3. AMOLED drives a compensation method, for AMOLED as claimed in claim 1 or 2, drives compensating circuit, it is characterized in that, comprising:
First stage, storage is arranged on the threshold voltage of the driving thin film transistor (TFT) of the several driving circuits in pixel region;
Subordinate phase, is arranged on the gray scale voltage of the several driving circuits in pixel region described in storage;
Phase III, described in be arranged on the driving thin film transistor (TFT) of the several driving circuits in pixel region grid voltage saltus step be described threshold voltage and described gray scale voltage and;
The described first stage, the threshold voltage that storage is arranged on the driving thin film transistor (TFT) of the several driving circuits in pixel region is:
The first clock signal output terminal is high level, second clock signal output part is low level, the 3rd thin film transistor (TFT), the 4th thin film transistor (TFT), the 6th thin film transistor (TFT) and the 7th thin film transistor (TFT) conducting, the first film transistor, the second thin film transistor (TFT) and the cut-off of the 5th thin film transistor (TFT), the voltage difference on building-out capacitor is arranged on the threshold voltage of the driving thin film transistor (TFT) of the several driving circuits in pixel region described in being;
Described subordinate phase, the gray scale voltage that is arranged on the several driving circuits in pixel region described in storage is:
The first clock signal output terminal is low level, second clock signal output part is high level, the 3rd thin film transistor (TFT), the 4th thin film transistor (TFT), the 6th thin film transistor (TFT) and the cut-off of the 7th thin film transistor (TFT), the first film transistor, the second thin film transistor (TFT) and the 5th thin film transistor (TFT) conducting, drive voltage difference on electric capacity be data line input described in be arranged on the gray scale voltage of the several driving circuits in pixel region;
The described phase III, described in be arranged on the driving thin film transistor (TFT) of the several driving circuits in pixel region grid voltage saltus step be described threshold voltage and described gray scale voltage and be:
The first clock signal output terminal is low level, second clock signal output part is low level, the 3rd thin film transistor (TFT), the 4th thin film transistor (TFT) and the 5th thin film transistor (TFT) conducting, the first film transistor, the second thin film transistor (TFT), the 6th thin film transistor (TFT) and the cut-off of the 7th thin film transistor (TFT), described in be arranged on the driving thin film transistor (TFT) of the several driving circuits in pixel region grid voltage saltus step be described threshold voltage and described gray scale voltage with.
4. a display device, is characterized in that, comprises that AMOLED as claimed in claim 1 or 2 drives compensating circuit.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110340564.6A CN102654975B (en) | 2011-11-01 | 2011-11-01 | AMOLED (active matrix/organic light emitting diode) drive compensation circuit and method and display device thereof |
| EP12790776.4A EP2775474B1 (en) | 2011-11-01 | 2012-09-26 | Amoled drive compensation circuit and method and display device thereof |
| PCT/CN2012/082032 WO2013063991A1 (en) | 2011-11-01 | 2012-09-26 | Amoled drive compensation circuit and method and display device thereof |
| KR1020127032551A KR20130060232A (en) | 2011-11-01 | 2012-09-26 | Amoled driving and compensating circuit and method, and amoled display device |
| JP2014537467A JP6037477B2 (en) | 2011-11-01 | 2012-09-26 | AMOLED drive compensation circuit, method and display device thereof |
| US13/805,505 US8970644B2 (en) | 2011-11-01 | 2012-09-26 | AMOLED driving and compensating circuit and method, and AMOLED display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110340564.6A CN102654975B (en) | 2011-11-01 | 2011-11-01 | AMOLED (active matrix/organic light emitting diode) drive compensation circuit and method and display device thereof |
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| Publication Number | Publication Date |
|---|---|
| CN102654975A CN102654975A (en) | 2012-09-05 |
| CN102654975B true CN102654975B (en) | 2014-08-20 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201110340564.6A Active CN102654975B (en) | 2011-11-01 | 2011-11-01 | AMOLED (active matrix/organic light emitting diode) drive compensation circuit and method and display device thereof |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8970644B2 (en) |
| EP (1) | EP2775474B1 (en) |
| JP (1) | JP6037477B2 (en) |
| KR (1) | KR20130060232A (en) |
| CN (1) | CN102654975B (en) |
| WO (1) | WO2013063991A1 (en) |
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| CN102654975B (en) | 2011-11-01 | 2014-08-20 | 京东方科技集团股份有限公司 | AMOLED (active matrix/organic light emitting diode) drive compensation circuit and method and display device thereof |
| CN104036724B (en) * | 2014-05-26 | 2016-11-02 | 京东方科技集团股份有限公司 | Image element circuit, the driving method of image element circuit and display device |
| CN104036726B (en) | 2014-05-30 | 2015-10-14 | 京东方科技集团股份有限公司 | Image element circuit and driving method, OLED display panel and device |
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| JP2016001266A (en) * | 2014-06-12 | 2016-01-07 | 三星ディスプレイ株式會社Ｓａｍｓｕｎｇ Ｄｉｓｐｌａｙ Ｃｏ．，Ｌｔｄ． | Display circuit and display apparatus |
| CN104123912B (en) * | 2014-07-03 | 2016-10-19 | 京东方科技集团股份有限公司 | Image element circuit and driving method, display device |
| CN104269134B (en) | 2014-09-28 | 2016-05-04 | 京东方科技集团股份有限公司 | A kind of gate drivers, display unit and grid drive method |
| CN105243996B (en) * | 2015-11-09 | 2018-01-30 | 深圳市华星光电技术有限公司 | Using the AMOLED drive circuit structures of external compensation |
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| CN106128363A (en) * | 2016-08-31 | 2016-11-16 | 深圳市华星光电技术有限公司 | A kind of for driving circuit and the method for AMOLED pixel |
| KR102577246B1 (en) * | 2016-11-11 | 2023-09-12 | 삼성디스플레이 주식회사 | Display device |
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-
2011
- 2011-11-01 CN CN201110340564.6A patent/CN102654975B/en active Active
-
2012
- 2012-09-26 JP JP2014537467A patent/JP6037477B2/en active Active
- 2012-09-26 US US13/805,505 patent/US8970644B2/en active Active
- 2012-09-26 WO PCT/CN2012/082032 patent/WO2013063991A1/en active Application Filing
- 2012-09-26 EP EP12790776.4A patent/EP2775474B1/en active Active
- 2012-09-26 KR KR1020127032551A patent/KR20130060232A/en not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| CN102654975A (en) | 2012-09-05 |
| JP6037477B2 (en) | 2016-12-07 |
| JP2014532896A (en) | 2014-12-08 |
| US20140049568A1 (en) | 2014-02-20 |
| KR20130060232A (en) | 2013-06-07 |
| EP2775474A4 (en) | 2015-05-06 |
| EP2775474A1 (en) | 2014-09-10 |
| WO2013063991A1 (en) | 2013-05-10 |
| EP2775474B1 (en) | 2017-09-13 |
| US8970644B2 (en) | 2015-03-03 |
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