CN102646927A - Wavelength-tunable external cavity laser based on waveguide reflecting grating array - Google Patents

Wavelength-tunable external cavity laser based on waveguide reflecting grating array Download PDF

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CN102646927A
CN102646927A CN2012101046380A CN201210104638A CN102646927A CN 102646927 A CN102646927 A CN 102646927A CN 2012101046380 A CN2012101046380 A CN 2012101046380A CN 201210104638 A CN201210104638 A CN 201210104638A CN 102646927 A CN102646927 A CN 102646927A
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waveguide
wavelength
laser
bragg grating
chip
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李若林
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SICHUAN MARS TECHNOLOGY Co Ltd
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SICHUAN MARS TECHNOLOGY Co Ltd
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Abstract

The invention discloses a wavelength-tunable external cavity laser based on a waveguide reflecting grating array. The wavelength-tunable external cavity laser comprises an active gain chip and a passive photonic chip. Waveguides are respectively arranged in the active gain chip and the passive photonic chip. The wavelength-tunable external cavity laser additionally comprises a first optical lens, a reflecting mirror and a second optical lens which are arranged along the optical path of a micro optical system. The number of the waveguides in the passive photonic chip is at least two and the at least two waveguides are arranged in an array. Each waveguide in the passive photonic chip comprises waveguide Bragg grating parts. The central wavelengths of the waveguide Bragg grating reflection peaks of the waveguide Bragg grating parts are different. A laser phase control part is arranged in a laser resonant cavity. By turning the reflecting mirror to regulate the reflecting angle of the reflecting mirror, a gathered light beam output by the second optical lens is selectively coupled to any one of the arrayed waveguides in the passive photonic chip and the selective continuous tuning of output laser wavelength is realized. The wavelength-tunable external cavity laser based on the waveguide reflecting grating array has the advantage that the selective and large-scale tuning of the output laser wavelength is realized.

Description

Tunable wave length outside cavity gas laser based on waveguide reflecting grating array
Technical field
The present invention relates to the technical field of Wavelength tunable laser, particularly based on the tunable wave length outside cavity gas laser of waveguide reflecting grating array.
Background technology
Wavelength-division multiplex technique (WDM) extensive use in the fiber optic, light communication system.The photoelectricity Transponder of wavelength division multiplexing comprises a laser, a modulator, receiver and relevant electronic equipment.The operation of wavelength division multiplexing transducer can realize through the laser with fixed wavelength of a near-infrared wavelength at 1550nm.Because very easy operating and height reliability, distributed feed-back formula (DFB) laser is used at wave division multiplexing transmission system widely.In Distributed Feedback Laser, provide the diffraction grating of bulk of optical feedback to be positioned at the top of whole gain resonant cavity, laser can obtain a stable single-mode oscillation under fixed wave length like this.And, also can be through directly modulation realizes to Distributed Feedback Laser in the message transmission of low digital rate.
It is through on each wavelength channel lattice point of each ITU (International Telecommunications Union) regulation, using a laser that the formation of wavelength division multiplex system is implemented.Yet Distributed Feedback Laser does not have the wavelength tuning range of broad, therefore, must use the different laser device to each wavelength, and this has just caused the cost of expensive wavelength management, requires very big clout stock to come to solve at any time problems such as laser failure simultaneously.
For this shortcoming that overcomes existing Distributed Feedback Laser obtains the operation of wide range of wavelengths single mode simultaneously, tunable laser is arisen at the historic moment.Tunable laser is exactly the wavelength channel that the wavelength variations of single laser can cover a lot of ITU regulations, and in application, can change to required wavelength channel at any time as required.Therefore, a tunable laser can be done the light source backup for a lot of wavelength channels, need can reduce in a large number as the laser of WDM transducer depot spare part.Tunable laser also can provide scheme flexibly in the location of wavelength division multiplexing, promptly can be as required some wavelength channel be replenished to add or remove from the light net.Correspondingly, tunable laser can help operator in whole fiber optic network, to carry out wavelength management effectively.
Tunable laser can roughly be divided into two big types: one type Tuning mechanism is provided by laser component inside, and another kind of Tuning mechanism is provided outward by laser component.
Traditional tunable laser scheme be represented as DBR (distribution Bragg reflector) laser; Its feature is that the active area that produces gain forms in same laser diode with the DBR district that produces reflection; But its tunable wavelength scope is not wide; Generally be no more than 10nm, and the laser linewidth broad.
Summary of the invention
The object of the present invention is to provide a kind of tunable wave length outside cavity gas laser, realize optionally and tuning on a large scale output Wavelength of Laser based on waveguide reflecting grating array.
The object of the invention is realized through following technical scheme:
A kind of tunable wave length outside cavity gas laser based on waveguide reflecting grating array; Comprise the active gain chip and the passive photon chip that is used for exocoel feedback and generation tunable wavelength that are used to produce broadband spontaneous radiation photon; Respectively has waveguide in active gain chip and the passive photon chip; The waveguide of two chips is through micro-optical systems coupling and form laser resonator, the micro-optical systems of said tunable external cavity laser comprise along the setting of micro-optical systems light path be used for to light beam carry out first optical lens of beam-expanding collimation, rotatable accommodation reflex angle the MEMS speculum, be used for light beam is brought together second optical lens of gathering; Waveguide in the said passive photon chip is at least two, and is arrayed; Each waveguide in the said passive photon chip includes the waveguide bragg grating part, and the centre wavelength of the waveguide bragg grating reflection peak of each waveguide bragg grating part has nothing in common with each other; Has the laser phase control section in the said laser resonator;
Through rotating the reflection angle of accommodation reflex mirror; Make through the gathering light beam of second optical lens output and select to be coupled to one of them on the Waveguide array in the passive photon chip arbitrarily; The light beam that is sent by the active gain chip repeatedly reflects in laser resonator; And, obtain laser through the long maximum reflection that obtains of laser phase control section coherent phase, realize the selectivity continuous tuning of output optical maser wavelength.
On the basis of the above, the present invention can do following improvement:
Laser phase control section according to the invention is located in each waveguide in the passive photon chip, or is located in the waveguide in the active gain chip, and the laser phase control section is used to guarantee the phase condition of laser formation.Each waveguide bragg grating part is equipped with the corresponding electrode that is used to change waveguide index with each laser phase control section in the said passive photon chip; Increase or reduce the refractive index of waveguide through respective electrode; Increase or reduce the maximum reflection wavelength of selecteed waveguide bragg grating, realize the two-way continuous tuning of output optical maser wavelength.The unidirectional tuning range of said selecteed waveguide bragg grating output optical maser wavelength covers the spacing that is adjacent adjacent center wavelength reflection peak in the waveguide bragg grating in the waveguide bragg grating array, realizes that the wide range of wavelengths of output optical maser wavelength is tuning.
In the time of in the waveguide in the laser phase control section is located at the active gain chip; Heater or refrigerator can be established in the bottom of said passive photon chip; Come to increase simultaneously or reduce the refractive index of each waveguide through the output temperature that changes heater or refrigerator; And then increase or reduce the maximum reflection wavelength of selecteed waveguide bragg grating, realize the two-way tuning of output optical maser wavelength.The unidirectional tuning range of said selecteed waveguide bragg grating output optical maser wavelength covers the spacing that is adjacent adjacent center wavelength reflection peak in the waveguide bragg grating in the waveguide bragg grating array, realizes that the wide range of wavelengths of output optical maser wavelength is tuning.
Active gain chip according to the invention send broadband spontaneous radiation photon an end be coated with anti-reflective film, the other end of active gain chip is coated with highly reflecting films or semi-transflective reflective film.
Tunable wave length outside cavity gas laser according to the invention also comprises the thermostat that is used for said tunable wave length outside cavity gas laser maintenance constant temperature operational environment, and this thermostat is positioned at the below or the periphery of said tunable wave length outside cavity gas laser.
Compared with prior art, this invention technology has the following advantages:
(1) the present invention selects the waveguide bragg grating of different centre wavelength reflection peaks in the passive photon chip inner waveguide array through rotating speculum; Carrying out wave-length coverage selects; And electro-optic effect or electrocaloric effect that can be through respective electrode or change the refractive index of waveguide; Or change the refractive index of waveguide through the temperature that changes the output of refrigerator or heater, export the continuous tuning of optical maser wavelength; The tuning of waveguide optical grating through MEMS speculum realization centre wavelength has nothing in common with each other added up, and can obtain large-scale wavelength tuning;
(2) the present invention can work to remain under the steady temperature through thermostat, to guarantee that waveguide index is not influenced by ambient temperature;
(3) the present invention guaranteed that the live width of this laser is narrower than traditional tunable DFB or DBR laser greatly, and narrow linewidth is a kind of key index of 40G/100 coherent communication of future generation owing to adopted outer-cavity structure and long resonant cavity.
Description of drawings
Fig. 1 is the structure for amplifying sketch map of the embodiment of the invention one;
Fig. 2 is the enlarged drawing of the embodiment of the invention one active gain chip;
Fig. 3 is the output Wavelength of Laser spectrum sketch map of the embodiment of the invention one;
Fig. 4 is the structure for amplifying sketch map of the embodiment of the invention two;
Fig. 5 is the structure for amplifying sketch map of the embodiment of the invention three;
Fig. 6 is the enlarged drawing of active gain chip among the embodiment of the invention two and the embodiment three.
Among the figure: 1. active gain chip, 2. highly reflecting films or semi-transflective reflective film, 3. anti-reflective film; 4. the waveguide in the active gain chip, 5, the 6. electrode of active gain chip inner waveguide, 7. first optical lens; 8. speculum, 9. second optical lens, 10. passive photon chip; 11, the electrode of 12,13,14,15,16,17,18,19,20. laser phase control sections; 21, the waveguide in the electrode at 22,23,24,25,26,27,28,29,30. waveguide bragg grating places, 31,32,33,34,35. passive photon chips, the waveguide bragg grating of 36,37,38,39,40. waveguide bragg gratings part; 41. heater or refrigerator, the electrode of 42,43. active gain chip inner laser phase control parts.
Embodiment
Embodiment one
Like Fig. 1, the tunable wave length outside cavity gas laser specific embodiment based on waveguide reflecting grating array shown in Figure 2, it comprises an active gain chip 1, is processed by compound semiconductor materials, is used to produce broadband spontaneous radiation photon, as excitation source; A passive photon chip 10 provides the tunable wave length feedback, produces the laser output of tunable wavelength.Respectively have waveguide (being fiber waveguide) in active gain chip 1 and the passive photon chip 10, waveguide 4 material selections in the passive photon chip have the material of big heat-light or electricity-spectrum number on refractive index, like the silicon waveguide on the SOI (silicon on insulated substrate).The waveguide of two chips is through the micro-optical systems coupling and form laser resonator; The micro-optical waveguide reflecting grating of unifying has constituted the exocoel of laser.
Micro-optical systems between 10 in active gain chip 1 and passive photon core comprise along the setting of micro-optical systems light path be used for to light beam carry out first optical lens 7 of beam-expanding collimation, rotatable accommodation reflex angle speculum 8, be used for light beam is brought together second optical lens 9 of gathering; Wherein, speculum 8 is rotating MEMS speculum, promptly utilizes the existing technological rotatable speculum of MEMS (MEMS) commonly used; This speculum 8 is made by existing ripe semiconducter IC technology; It is little to have volume, does not need Mechanical Driven, through the automatically controlled characteristics that realize accurate rotation; Also can adopt the speculum of existing other versions, reach and rotate the accommodation reflex angle.Waveguide in the passive photon chip can be provided with five, and is arrayed, and the waveguide 31,32,33,34,35 in the passive photon chip forms waveguide array.Also can the waveguide of two above any amount be set according to the needs of wavelength tuning range.The size of passive photon chip reality is littler than lens, is the enlarged diagram that demonstrates design feature of the present invention for ease among Fig. 1.
Include waveguide bragg grating part and laser phase control section in each waveguide in the passive photon chip 10, each waveguide bragg grating part only produces a reflection peak.The centre wavelength of the reflection peak 41,42,43,44,45 of each waveguide bragg grating has nothing in common with each other, but has close reflected intensity, and in waveguide array, the centre wavelength of each adjacent waveguide Bragg grating reflection peak is close or equal at interval.In the present embodiment, Bragg grating can be etched on the waveguide core, and then covers covering.First optical lens 7, MEMS speculum 8 are provided with the right side of active gain chip 1 successively; Second optical lens 9, passive photon chip 10 are located at the downside of MEMS speculum 8 successively, and first optical lens 7, MEMS speculum 8, second optical lens 9, passive photon chip 10 be common to constitute passive exocoel feedback district.
On the waveguide core of each waveguide bragg grating part and each laser phase control section, all or part of electrode that is used to change waveguide index that is coated with correspondence is realized the two-way tuning of electrode pair waveguide bragg grating in passive photon chip 10.
Electrode is a metal electrode, and metal electrode is placed on the top of waveguide covering, can be positioned at the both sides or the waveguide core top of waveguide core.Can change temperature through metal electrode heating, produce heat-luminous effect and change waveguide index; Also can pass through injection current,, produce electro-optic effect and increase or reduce waveguide index through the change of electric current on the metal electrode.
The maximum reflection wavelength of waveguide bragg grating is determined by following total relation:
λ=2·n eff·Λ (1)
λ is the wavelength of Bragg grating reflection peak in the formula (1), n EffBe the effective refractive index of single mode waveguide, Λ is the cycle of Bragg reflection grating.Therefore, visible by formula (1), when waveguide index was changed, waveguide bragg grating reflection peak wavelength just can be by tuning.Simultaneously, also electrode can be set on the waveguide core in the active gain chip, be used for injecting electronics, near a certain centre wavelength, produce broadband spontaneous radiation photon through electronics-photon conversion to active area.
Active gain chip 1 send broadband spontaneous radiation photon an end be that right-hand member is coated with anti-reflective film 3 (AR film), be that left end can plate highly reflecting films (HR film) or semi-transflective reflective film 2 (PR film) at the other end of active gain chip 1.
In the present embodiment; For avoiding the influence of external environment condition to this tunable wave length outside cavity gas laser; So keep the thermostat of constant temperature operational environment at this tunable wave length outside cavity gas laser; This thermostat is positioned at the below or the periphery of tunable wave length outside cavity gas laser, and this thermostat is thermoelectric cooling module (TEC).
When at the left side of active gain chip plating highly reflecting films (reflectivity is greater than 95%), the lower reflectivity that has of waveguide bragg grating in the waveguide array is set, send light beam by active gain chip 1 right-hand member; Through first optical lens, 7 beam-expanding collimations; Through the angle reflection of speculum 8, bring together through second optical lens 9 again and assemble in the waveguide that is coupling in the selecteed passive photon chip 10 then, transmit in the waveguide of light beam in selecteed waveguide to regulate; Again through this waveguide bragg grating reflection; The left end that is back to active gain chip 1 by original optical path is so repeatedly reflected in laser resonator by highly reflecting films 2 reflections, changes the electrode 11,12,13,14,15,16,17,18,19,20 of laser phase control section simultaneously; Regulate the length of the optical path of photon; This length is the product of the refractive index and the physical length of waveguide light, by generation of Laser provide come and go the phase coherence condition in the resonant cavity of palpus, thereby through the long maximum reflection that obtains of laser phase control section coherent phase; Obtain laser, and export from the right-hand member of passive photon chip 10.
After the waveguide in choosing the waveguide bragg grating array; Through driving 8 rotations of MEMS speculum; To rotate the reflection angle of accommodation reflex mirror 8; Speculum 8 beam reflected are focused on through the output of second optical lens 9 to be coupled in the passive photon chip 10 in the selecteed waveguide; A waveguide bragg grating during MEMS speculum 9 is once only selected to display all can be selected different waveguide bragg gratings as the external feedback of wavelength tuning and rotate MEMS speculum 9 at every turn, realizes the selectivity continuous tuning of output optical maser wavelength; Wherein, rotating MEMS speculum 9 can be the selective sequential waveguide bragg grating by the wavelength increasing or decreasing, and it is tuning to form continuous optical maser wavelength, also can be to select arbitrarily according to the needs of output optical maser wavelength.Because of the reflection peak centre wavelength of each waveguide bragg grating has nothing in common with each other; And the spacing of adjacent center wavelength is covered by the unidirectional tuning range of electrode or heater or refrigerator; Obtain tuning adding up, this tunable external cavity laser then can obtain very wide wavelength tuning range.
Also can be through changing the electrode 21,22,23,24,25,26,27,28,29,30 at waveguide bragg grating place; Increase or reduce the maximum reflection wavelength (centre wavelength of reflection peak) of waveguide bragg grating, realize the two-way continuous tuning of output optical maser wavelength.The wave spectrum of output laser is as shown in Figure 3, for arbitrary selecteed reflection peak 43, can through electrode or heater or refrigerator is tuning it is moved to the left or to the right, promptly realizes two-way tuning; And the tuning range that reflection peak 43 moves to the left or to the right, with the spacing that covers reflection peak 43 and reflection peak 42, or the spacing of covering reflection peak 43 and reflection peak 44; When reflection peak 43 is tuning move to reflection peak 44 places after; Then can select the waveguide bragg grating of this reflection peak 44 through the MEMS speculum, to reflection peak 44 tuning moving, so realize continuous tuning again; And obtain tuning adding up, have very wide wavelength tuning range.
In addition; When the left side of active gain chip 1 plating semi-transflective reflective film; Make the waveguide bragg grating in the waveguide array have higher reflectivity through setting; Active gain chip 1 right-hand member sends the light beam of light beam after laser resonator repeatedly reflects to form laser, will be from the left end output of active gain chip 1.
Embodiment two
Like Fig. 4, the tunable wave length outside cavity gas laser based on waveguide reflecting grating array shown in Figure 6 is embodiments of the invention two; Present embodiment two is with the difference of embodiment one: in the present embodiment; Do not establish the laser phase control section in each waveguide of passive photon chip 10; And add the laser phase control section in the waveguide in the active gain chip, at all or part of electrode that is used to change waveguide index that is coated with of this laser phase control section, the electrode 42,43 of this active gain chip inner laser phase control part is a metal electrode; Can change temperature through metal electrode heating, produce heat-luminous effect and change waveguide index; Also can pass through injection current,, produce electro-optic effect and change waveguide index through the change of electric current on the metal electrode.Change the electrode 42,43 of this active gain chip inner laser phase control part, by generation of Laser provide come and go the phase coherence condition in the resonant cavity of palpus.
Present embodiment can be realized the selectivity continuous tuning of output optical maser wavelength through rotating the accommodation reflex mirror equally; Change the refractive index of waveguide through respective electrode; Change the maximum reflection wavelength of selecteed waveguide bragg grating, realize the continuous tuning of output optical maser wavelength.
Embodiment three
Like Fig. 5, the tunable wave length outside cavity gas laser based on waveguide reflecting grating array shown in Figure 6 is embodiments of the invention three; Present embodiment three is with the difference of embodiment two: in the present embodiment; Saved the electrode of each waveguide place in the waveguide array; And be provided with heater or refrigerator 41 in the bottom of passive photon chip; Output temperature through changing heater or refrigerator 41 to change simultaneously the refractive index of each waveguide of waveguide array, and then changes the maximum reflection wavelength of selecteed waveguide bragg grating, the same continuous tuning of realizing output optical maser wavelength.
Execution mode of the present invention is not limited thereto; According to foregoing; Ordinary skill knowledge and customary means according to this area; Do not breaking away under the above-mentioned basic fundamental thought of the present invention prerequisite, the present invention can also make equivalent modifications, replacement or the change of other various ways, all can realize the object of the invention.

Claims (9)

1. tunable wave length outside cavity gas laser based on waveguide reflecting grating array; Comprise the active gain chip that is used to produce broadband spontaneous radiation photon, passive photon chip, the laser phase control section that is used for exocoel feedback and generation tunable wavelength; Respectively has waveguide in active gain chip and the passive photon chip; The waveguide of two chips is through micro-optical systems coupling and form laser resonator, it is characterized in that: the micro-optical systems of said tunable external cavity laser comprise along the setting of micro-optical systems light path be used for to light beam carry out first optical lens of beam-expanding collimation, rotatable accommodation reflex angle the MEMS speculum, be used for light beam is brought together second optical lens of gathering; Waveguide in the said passive photon chip is at least two, and is arrayed; Each waveguide in the said passive photon chip all comprises the waveguide bragg grating part, and the centre wavelength of the waveguide bragg grating reflection peak of each waveguide bragg grating part has nothing in common with each other;
Through rotating the reflection angle of accommodation reflex mirror; Make through the gathering light beam of second optical lens output and select to be coupled to one of them on the Waveguide array in the passive photon chip arbitrarily; The light beam that is sent by the active gain chip repeatedly reflects in laser resonator; And, obtain laser through the long maximum reflection that obtains of laser phase control section coherent phase, realize the selectivity continuous tuning of output optical maser wavelength.
2. the tunable wave length outside cavity gas laser based on waveguide reflecting grating array according to claim 1 is characterized in that: said laser phase control section is located in each waveguide in the passive photon chip.
3. the tunable wave length outside cavity gas laser based on waveguide reflecting grating array according to claim 1 is characterized in that: said laser phase control section is located in the waveguide in the active gain chip.
4. the tunable wave length outside cavity gas laser based on waveguide reflecting grating array according to claim 3; It is characterized in that: the bottom of said passive photon chip is provided with heater or refrigerator; Come to increase simultaneously or reduce the refractive index of each waveguide through the output temperature that changes heater or refrigerator; And then increase or reduce the maximum reflection wavelength of selecteed waveguide bragg grating, realize the two-way continuous tuning of output optical maser wavelength.
5. the tunable wave length outside cavity gas laser based on waveguide reflecting grating array according to claim 4 is characterized in that: the unidirectional tuning range of said selecteed waveguide bragg grating output optical maser wavelength covers the spacing that is adjacent waveguide bragg grating centre wavelength reflection peak in the waveguide bragg grating array.
6. according to each described tunable wave length outside cavity gas laser of claim 1-3 based on waveguide reflecting grating array; It is characterized in that: each waveguide bragg grating part is equipped with the corresponding electrode that is used to change waveguide index with each laser phase control section in the said passive photon chip; Increase or reduce the refractive index of waveguide through respective electrode; Increase or reduce the maximum reflection wavelength of selecteed waveguide bragg grating, realize the two-way continuous tuning of output optical maser wavelength.
7. the tunable wave length outside cavity gas laser based on waveguide reflecting grating array according to claim 6 is characterized in that: the unidirectional tuning range of said selecteed waveguide bragg grating output optical maser wavelength covers the spacing that is adjacent waveguide bragg grating centre wavelength reflection peak in the waveguide bragg grating array.
8. according to each described tunable wave length outside cavity gas laser of claim 1-3 based on waveguide reflecting grating array; It is characterized in that: said active gain chip send broadband spontaneous radiation photon an end be coated with anti-reflective film, the other end of active gain chip is coated with highly reflecting films or semi-transflective reflective film.
9. the tunable wave length outside cavity gas laser based on waveguide reflecting grating array according to claim 8; It is characterized in that: said tunable wave length outside cavity gas laser also comprises the thermostat that is used for said tunable wave length outside cavity gas laser maintenance constant temperature operational environment, and this thermostat is positioned at the below or the periphery of said tunable wave length outside cavity gas laser.
CN2012101046380A 2012-04-11 2012-04-11 Wavelength-tunable external cavity laser based on waveguide reflecting grating array Pending CN102646927A (en)

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CN110594702A (en) * 2019-09-18 2019-12-20 北京大学东莞光电研究院 LD-based double-color temperature lighting device and preparation method thereof
CN111158173A (en) * 2020-01-07 2020-05-15 浙江西湖高等研究院 Integrated laser scanner based on array waveguide grating and acousto-optic modulation grating
CN111326952A (en) * 2020-02-10 2020-06-23 中国工程物理研究院应用电子学研究所 Spectrum beam combining device based on-chip regulation and control semiconductor laser chip
CN113206444A (en) * 2021-05-08 2021-08-03 中国科学院半导体研究所 Tunable laser
CN116577804A (en) * 2022-06-30 2023-08-11 珠海映讯芯光科技有限公司 FMCW laser radar based on chip integration
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Application publication date: 20120822