CN102605333B - Preparation method for tantalum oxide film with high laser damage threshold under high-temperature environment - Google Patents
Preparation method for tantalum oxide film with high laser damage threshold under high-temperature environment Download PDFInfo
- Publication number
- CN102605333B CN102605333B CN2012100849264A CN201210084926A CN102605333B CN 102605333 B CN102605333 B CN 102605333B CN 2012100849264 A CN2012100849264 A CN 2012100849264A CN 201210084926 A CN201210084926 A CN 201210084926A CN 102605333 B CN102605333 B CN 102605333B
- Authority
- CN
- China
- Prior art keywords
- film
- laser
- preparation
- damage threshold
- tantalum oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Formation Of Insulating Films (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention relates to a preparation method for a tantalum oxide film with a high laser damage threshold under a high-temperature environment and belongs to the preparation method for an optical film. The preparation method comprises the following steps: plating a tantalum oxide film on a clean substrate according to a double ion beam sputtering method; performing post-processing on a prepared film in laser pre-processing and annealing manner, thereby achieving better functions of repairing film defect and relieving film stress; and preparing a laser film capable of being applied to high-temperature environment. The preparation method provided by the invention has the advantages that: 1) the film prepared according to the double ion beam sputtering method is compact, the characteristic of easiness in moisture absorption of a loosened film prepared according to an electronic beam preparation method is improved, and the stability is better; 2) the laser pre-processing and annealing combined method is adopted, thereby overcoming the limitation caused by traditionally adopting a single method, and being beneficial to greatly increasing the threshold; and 3) the film prepared according to the method can be used under a high-temperature environment with the highest temperature at 350 DEG C, and the problem of the prior art that only the laser film used under room temperature can be prepared is solved.
Description
Technical field
The invention belongs to the preparation method of optical thin film, be specifically related to have under a kind of hot environment the preparation method of high laser damage threshold tantalum oxide films.
Background technology
The foundation of high-power laser system and the proposition of laser fusion, proposed more and more harsher requirement to the optical thin film performance, particularly requires it to have superpower resisting laser damage ability.The research emphasis of damage threshold mainly concentrates on film characteristics and laser parameter for many years, has studied base reservoir temperature, oxygen partial pressure and sedimentation rate in the electron beam evaporation process to Ta as people such as Milam
2O
5/ SiO
2The impact of anti-reflection film damage threshold (Applied Optics, 1982,21,3689～3694.), the people such as Abromavicius have studied sedimentation rate in the ion beam assisted depositing method, base reservoir temperature and ion beam current energy to Ta
2O
5/ SiO
2Impact (the Proc.SPIE of high-reflecting film threshold value, 2007,6403,640315), the people such as horse equality people and Riede have studied the damage from laser of dissimilar film in the vacuum (light laser and particle beam, 2009,21,1829～1832), the people such as Shen Jun zirconium dioxide film (CN15553220A) that adopts sol-gel method to prepare to have high laser damage threshold.But the laser deflection Value Data in these researchs is all measured at normal temperatures.
Along with the expansion of laser Application Areas, temperature factor is more and more outstanding on the impact of laser damage in thin films.Under the background developed rapidly in current space technology, the space laser device just needs to consider the impact of temperature, because in space, the direct sunlight surface temperature can rise to 250 ℃; And Laser lithography expection of future generation breaks through 20 nano-photoetching nodes, thin-film component wherein need to bear the high temperature of hundreds of degree for a long time.In these cases, the conventional laser film used under normal temperature condition just is difficult to be suitable for.Be applied to up to now under hot environment have the correlative study of high laser damage threshold film there are no report.
Summary of the invention
The objective of the invention is to provide the preparation method who has the high laser damage threshold tantalum oxide films under a kind of hot environment, solves the problem that the laser film element can not bear the high temperature of hundreds of degree for a long time.
The objective of the invention is to provide a kind of preparation method of tantalum oxide films of high laser damage threshold, its concrete steps are:
One, substrate is soaked in scavenging solution, ultrasonic cleaning 5～30min, then rinse well with deionized water, finally with high pure nitrogen, dries up;
Two, the High-purity Tantalum target of employing 99.999%, with double ion beam sputtered method plated film in the substrate of above-mentioned processing; The base vacuum degree is 5 * 10
-4～1 * 10
-5Pa, storing temperature are 60～150 ℃, and it is 1 * 10 that oxygenation is pressed
-2～1 * 10
-1Pa, the argon flow amount of sputtering source are 5～90mL/min, and the argon flow amount of radio frequency neutralizer is 0.5～30mL/min, and the argon gas of second source and the throughput ratio of oxygen are 0.1～1, first the tantalum target are carried out to the 5min cleaning before sputter, then start to be coated with film;
Three, coated film is carried out to laser pre-treated, the focal beam spot diameter is 50～900 μ m, and pretreated energy size is determined according to the laser damage threshold of film under normal temperature.Wherein under normal temperature, the laser damage threshold testing method of film is as follows: choosing energy density is the laser irradiation testing sample of 1～50J/cm2, in the mode of 1-on-1, measure 10 points, draw the probability of damage, then change its energy density, obtain the damage probability under the different-energy density laser, choose 10 energy probability, namely measure altogether 10 * 10 points; By computer, the laser energy density at every turn acted on sample is carried out to Real-time Collection, then according at the damage probability of each energy density section, the laser energy density the when method by the mapping linear fit draws the zero probability damage is the Immediate damage threshold value of laser irradiation sample under normal temperature; Adopt the step type pretreatment mode, detailed process is: to the pre-treatment energy of every of film surface from the normal temperature laser damage threshold 30%, then increase by 10% at every turn, step type is energization gradually, until increase to 80%, stop, then start the pre-treatment of next point, film surface is all handled always;
Four, pretreated tantalum-oxide film is carried out to anneal in atmosphere, annealing temperature is 200～400 ℃, and temperature rise rate is 0.01～20 ℃/min, and soaking time is 1～50h.
Described substrate is BK7 glass or quartz.
Described scavenging solution is any in sherwood oil, acetone or alcohol, or wherein any two kinds of described sherwood oil, acetone and ethanol, with the mixture of arbitrary volume ratio.
Described annealing atmosphere be oxygen, nitrogen, argon gas or airborne any.
Beneficial effect, owing to having adopted such scheme, used the tantalum oxide with high crystal phase transition temperature as Coating Materials, utilizes the high-temperature resistance of tantalum oxide material, is conducive to improve the damage threshold of the film of preparation.The post-treating method that has adopted simultaneously laser pre-treated and annealing to combine, can better repair the gentle degrading film stress of film defects, thereby improved the laser damage threshold under the hot environment, solve the problem that the laser film element can not bear the high temperature of hundreds of degree for a long time, reached purpose of the present invention.
The present invention has advantages of following:
1, the present invention adopts double ion beam sputtered method, the film of preparation is dense, has improved the characteristics that electron beam such as prepares at the easy moisture absorption of loose film prepared by method, has better stability.
2, the method that has adopted laser pre-treated and annealing to combine in the present invention, improved a limitation by a kind of method in the past, is conducive to promote to a greater extent threshold value.
3, the film for preparing of the method can be used under the hot environment of the highest 350 ℃, has solved the problem that conventional art can only prepare the laser film used under normal temperature.
Embodiment
Below by embodiment in detail the present invention is described in detail.
Embodiment 1: the BK7 substrate of glass is soaked in sherwood oil, and ultrasonic cleaning 15min, then rinse well with deionized water, finally with high pure nitrogen, dries up.Adopt double ion beam sputtered method to be coated with tantalum-oxide film in the BK7 substrate of cleaning, the base vacuum degree is 2 * 10
-4Pa, storing temperature are 80 ℃, and it is 5 * 10 that oxygenation is pressed
-2Pa, the argon flow amount of sputtering source are 15mL/min, and the argon flow amount of radio frequency neutralizer is 5mL/min, and the argon gas of second source and the throughput ratio of oxygen are 0.5, first the tantalum target are carried out to the 5min cleaning before sputter, then are coated with film.The tantalum oxide films prepared is carried out to the standard damage threshold test under normal temperature, mode with 1-on-1, according to the ISO11254-1 standard, the energy density while usining zero damage probability is as the laser damage threshold of film, and the threshold value under the 1064nm laser recorded is 18J/cm
2.The above-mentioned threshold value recorded of take is standard, and tantalum oxide films is carried out to laser pre-treated, and optical maser wavelength 1064nm, focal beam spot diameter are 200 μ m, adopts the step type pretreatment mode, to the pre-treatment energy of every of film surface from 5.4J/cm
2Start, then press 1.8J/cm
2The step energization, until increase to 14.4J/cm
2Stop, then starting the pre-treatment of next point, film surface is all handled always.Tantalum-oxide film after laser pre-treated is carried out to anneal in air, annealing temperature is 350 ℃, and temperature rise rate is 5 ℃/min, and soaking time is 10h.
The laser damage threshold test of film under hot environment carried out on self-built high-temperature laser damage threshold test platform: 350 ℃ of design temperatures, the employing wavelength is that the electric-optically Q-switched single-mode laser of Nd:YAG of 1064nm is measured the laser damage threshold of film, the light beam vertical incidence, repetition rate 1Hz, pulse width 12 ns, the sample surfaces spot size is 0.467mm.Laser is spaced apart 1.5mm at the irradiation of sample surfaces, adopts the mode of 1-on-1 to test, and measures altogether 10 * 10 points.In experiment, by online microscope judgment means, degree of impairment is carried out to Real-Time Monitoring, the laser energy at every turn acted on sample is carried out to Real-time Collection by computer, then according at the damage probability of each energy section, the laser damage threshold of film when the method by the mapping linear fit draws the zero probability damage.
Test result shows, at the temperature of 350 ℃, the damage threshold of film under 1064nm laser is 11J/cm
2.
Embodiment 2: quartz substrate is soaked in the mixed solution of sherwood oil and acetone, both volume ratios are 1:1, and ultrasonic cleaning 20min, then rinse well with deionized water, finally with high pure nitrogen, dries up.Adopt double ion beam sputtered method to be coated with tantalum-oxide film on the quartz substrate of cleaning, the base vacuum degree is 2.4 * 10
-4Pa, storing temperature are 120 ℃, and it is 8 * 10 that oxygenation is pressed
-2Pa, the argon flow amount of sputtering source are 20mL/min, and the argon flow amount of radio frequency neutralizer is 4mL/min, and the argon gas of second source and the throughput ratio of oxygen are 0.4, first the tantalum target are carried out to the 5min cleaning before sputter, then are coated with film.The tantalum oxide films prepared is carried out to the standard damage threshold test under normal temperature, mode with 1-on-1, according to the ISO11254-1 standard, the energy density while usining zero damage probability is as the laser damage threshold of film, and the threshold value under the 1064nm laser recorded is 20J/cm
2.The above-mentioned threshold value recorded of take is standard, and tantalum oxide films is carried out to laser pre-treated, and optical maser wavelength 1064nm, focal beam spot diameter are 180 μ m, adopts the step type pretreatment mode, to the pre-treatment energy of every of film surface from 6J/cm
2Start, then press 2J/cm
2The step energization, until increase to 16J/cm
2Stop, then starting the pre-treatment of next point, film surface is all handled always.Tantalum-oxide film after laser pre-treated is carried out to anneal in air, annealing temperature is 400 ℃, and temperature rise rate is 2 ℃/min, and soaking time is 12h.Test result shows, at the temperature of 300 ℃, the damage threshold of film under 1064nm laser is 15J/cm
2.
Embodiment 3: quartz substrate is soaked in the mixed solution of acetone and ethanol, both volume ratios are 8:1, and ultrasonic cleaning 30min, then rinse well with deionized water, finally with high pure nitrogen, dries up.Adopt double ion beam sputtered method to be coated with tantalum-oxide film on the quartz substrate of cleaning, the base vacuum degree is 1 * 10
-5Pa, storing temperature are 150 ℃, and it is 6 * 10 that oxygenation is pressed
-2Pa, the argon flow amount of sputtering source are 80mL/min, and the argon flow amount of radio frequency neutralizer is 25mL/min, and the argon gas of second source and the throughput ratio of oxygen are 0.1, first the tantalum target are carried out to the 5min cleaning before sputter, then are coated with film.The tantalum oxide films prepared is carried out to the standard damage threshold test under normal temperature, mode with 1-on-1, according to the ISO11254-1 standard, the energy density while usining zero damage probability is as the laser damage threshold of film, and the threshold value under the 532nm laser recorded is 10J/cm
2.The above-mentioned threshold value recorded of take is standard, and tantalum oxide films is carried out to laser pre-treated, and optical maser wavelength 532nm, focal beam spot diameter are 800 μ m, adopts the step type pretreatment mode, to the pre-treatment energy of every of film surface from 3J/cm
2Start, then press 1J/cm
2The step energization, until increase to 8J/cm
2Stop, then starting the pre-treatment of next point, film surface is all handled always.Tantalum-oxide film after laser pre-treated is carried out to anneal in air, annealing temperature is 250 ℃, and temperature rise rate is 20 ℃/min, and soaking time is 12h.Test result shows, at the temperature of 250 ℃, the damage threshold of film under 532nm laser is 8J/cm
2.
Embodiment 4: the BK7 substrate of glass is soaked in ethanol, and ultrasonic cleaning 5min, then rinse well with deionized water, finally with high pure nitrogen, dries up.Adopt double ion beam sputtered method to be coated with tantalum-oxide film in the BK7 substrate of cleaning, the base vacuum degree is 5 * 10
-4Pa, storing temperature are 60 ℃, and it is 5 * 10 that oxygenation is pressed
-2Pa, the argon flow amount of sputtering source are 10mL/min, and the argon flow amount of radio frequency neutralizer is 15mL/min, and the argon gas of second source and the throughput ratio of oxygen are 0.6, first the tantalum target are carried out to the 5min cleaning before sputter, then are coated with tantalum oxide films.On coated tantalum oxide films, be coated with the layer of silicon dioxide film, then alternately be coated with for 10 cycles, the film of preparation is 99% at the reflectivity of 1064nm.The film prepared is carried out to the standard damage threshold test under normal temperature, and in the mode of 1-on-1, according to the ISO11254-1 standard, the energy density while usining zero damage probability is as the laser damage threshold of film, and the threshold value under the 1064nm laser recorded is 35J/cm
2.The above-mentioned threshold value recorded of take is standard, and tantalum oxide films is carried out to laser pre-treated, and optical maser wavelength 1064nm, focal beam spot diameter are 300 μ m, adopts the step type pretreatment mode, to the pre-treatment energy of every of film surface from 10.5J/cm
2Start, then press 3.5J/cm
2The step energization, until increase to 28J/cm
2Stop, then starting the pre-treatment of next point, film surface is all handled always.Tantalum-oxide film after laser pre-treated is carried out to anneal in air, annealing temperature is 200 ℃, and temperature rise rate is 0.01 ℃/min, and soaking time is 6h.Test result shows, at the temperature of 200 ℃, the damage threshold of film under 1064nm laser is 24J/cm
2.
Embodiment 5: quartz substrate is soaked in acetone, and ultrasonic cleaning 10min, then rinse well with deionized water, finally with high pure nitrogen, dries up.Adopt double ion beam sputtered method to be coated with tantalum-oxide film on the quartz substrate of cleaning, the base vacuum degree is 6 * 10
-4Pa, storing temperature are 110 ℃, and it is 3.2 * 10 that oxygenation is pressed
-2Pa, the argon flow amount of sputtering source are 16mL/min, and the argon flow amount of radio frequency neutralizer is 3mL/min, and the argon gas of second source and the throughput ratio of oxygen are 0.4, first the tantalum target are carried out to the 5min cleaning before sputter, then are coated with tantalum oxide films.On coated tantalum oxide films, being coated with certain thickness silicon-dioxide, to make the film of preparation be 98% in the transmitance of 1064nm.The film prepared is carried out to the standard damage threshold test under normal temperature, and in the mode of 1-on-1, according to the ISO11254-1 standard, the energy density while usining zero damage probability is as the laser damage threshold of film, and the threshold value under the 1064nm laser recorded is 22J/cm
2.The above-mentioned threshold value recorded of take is standard, and tantalum oxide films is carried out to laser pre-treated, and optical maser wavelength 1064nm, focal beam spot diameter are 350 μ m, adopts the step type pretreatment mode, to the pre-treatment energy of every of film surface from 6.6J/cm
2Start, then press 2.2J/cm
2The step energization, until increase to 17.6J/cm
2Stop, then starting the pre-treatment of next point, film surface is all handled always.Tantalum-oxide film after laser pre-treated is carried out to anneal in air, annealing temperature is 220 ℃, and temperature rise rate is 0.01 ℃/min, and soaking time is 10h.Test result shows, at the temperature of 220 ℃, the damage threshold of film under 1064nm laser is 17J/cm
2.
Claims (4)
1. under a hot environment, have the preparation method of high laser damage threshold tantalum oxide films, it is characterized in that: its concrete steps are:
One, substrate is soaked in scavenging solution, ultrasonic cleaning 5～30min, then rinse well with deionized water, finally with high pure nitrogen, dries up;
Two, the High-purity Tantalum target of employing 99.999%, with double ion beam sputtered method plated film in the substrate of above-mentioned processing; The base vacuum degree is 5 * 10
-4～1 * 10
-5Pa, storing temperature are 60～150 ℃, and it is 1 * 10 that oxygenation is pressed
-2～1 * 10
-1Pa, the argon flow amount of sputtering source are 5～90mL/min, and the argon flow amount of radio frequency neutralizer is 0.5～30mL/min, and the argon gas of second source and the throughput ratio of oxygen are 0.1～1, first the tantalum target are carried out to the 5min cleaning before sputter, then start to be coated with film;
Three, coated film is carried out to laser pre-treated, the focal beam spot diameter is 50～900 μ m, and pretreated energy size is determined according to the laser damage threshold of film under normal temperature;
Wherein under normal temperature, the laser damage threshold testing method of film is as follows: choosing energy density is the laser irradiation testing sample of 1～50J/cm2, in the mode of 1-on-1, measure 10 points, draw the probability of damage, then change its energy density, obtain the damage probability under the different-energy density laser, choose 10 energy probability, namely measure altogether 10 * 10 points; By computer, the laser energy density at every turn acted on sample is carried out to Real-time Collection, then according at the damage probability of each energy density section, the laser energy density the when method by the mapping linear fit draws the zero probability damage is the Immediate damage threshold value of laser irradiation sample under normal temperature; Adopt the step type pretreatment mode, detailed process is: to the pre-treatment energy of every of film surface from the normal temperature laser damage threshold 30%, then increase by 10% at every turn, step type is energization gradually, until increase to 80%, stop, then start the pre-treatment of next point, film surface is all handled always;
Four, pretreated tantalum-oxide film is carried out to anneal in atmosphere, annealing temperature is 200～400 ℃, and temperature rise rate is 0.01～20 ℃/min, and soaking time is 1～50h.
2. under hot environment according to claim 1, have the preparation method of high laser damage threshold tantalum oxide films, it is characterized in that: described substrate is BK7 glass or quartz.
3. under hot environment according to claim 1, has the preparation method of high laser damage threshold tantalum oxide films, it is characterized in that: described scavenging solution is any in sherwood oil, acetone or alcohol, or wherein any two kinds of described sherwood oil, acetone and ethanol, with the mixture of arbitrary volume ratio.
4. under hot environment according to claim 1, have the preparation method of high laser damage threshold tantalum oxide films, it is characterized in that: described annealing atmosphere be oxygen, nitrogen, argon gas or airborne any.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100849264A CN102605333B (en) | 2012-03-28 | 2012-03-28 | Preparation method for tantalum oxide film with high laser damage threshold under high-temperature environment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100849264A CN102605333B (en) | 2012-03-28 | 2012-03-28 | Preparation method for tantalum oxide film with high laser damage threshold under high-temperature environment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102605333A CN102605333A (en) | 2012-07-25 |
| CN102605333B true CN102605333B (en) | 2013-11-27 |
Family
ID=46523088
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012100849264A Expired - Fee Related CN102605333B (en) | 2012-03-28 | 2012-03-28 | Preparation method for tantalum oxide film with high laser damage threshold under high-temperature environment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102605333B (en) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103233203B (en) * | 2013-03-18 | 2015-06-10 | 内蒙古大学 | Preparation method of ferromagnetism enhanced BiFeO3 film |
| CN103225063B (en) * | 2013-04-25 | 2015-03-25 | 中国科学院上海光学精密机械研究所 | Neodymium glass activation reflector preparation method |
| CN103949771B (en) * | 2014-02-13 | 2015-06-24 | 同济大学 | Laser pretreatment technology based on characteristic artificial knot defects |
| CN105734505B (en) * | 2016-03-18 | 2017-12-29 | 东北大学 | A kind of titanium alloy cutting complex function cutter coat and preparation method thereof |
| CN106958008A (en) * | 2017-02-20 | 2017-07-18 | 东北大学秦皇岛分校 | A kind of method that tantalum oxide films are prepared by direct current magnetron sputtering process |
| CN108445046A (en) * | 2018-01-24 | 2018-08-24 | 四川大学 | The comparative approach of resisting laser damage ability based on thin dielectric film capacitance characteristic |
| CN109115684B (en) * | 2018-09-07 | 2020-11-03 | 中国工程物理研究院激光聚变研究中心 | Measuring method and measuring system for determining laser pretreatment energy level |
| CN110330236B (en) * | 2019-07-16 | 2021-08-31 | 中国矿业大学 | Preparation method of high-temperature-resistant niobium oxide film with high laser damage threshold |
| CN110530206B (en) * | 2019-10-11 | 2021-09-21 | 河南平原光电有限公司 | Preparation process of high-damage-threshold protective film for optical code disc of laser information field |
| CN112981353A (en) * | 2019-12-13 | 2021-06-18 | 中国科学院大连化学物理研究所 | Method for eliminating film stress |
| CN112267098B (en) * | 2020-09-07 | 2022-03-08 | 中国科学院上海光学精密机械研究所 | Preparation method of space laser film |
| CN112095081A (en) * | 2020-09-10 | 2020-12-18 | 天津津航技术物理研究所 | Preparation method of ultralow-stress high-reflection film |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4002545A (en) * | 1976-02-09 | 1977-01-11 | Corning Glass Works | Method of forming a thin film capacitor |
| CN1064157A (en) * | 1991-02-04 | 1992-09-02 | 浙江大学 | Mistuning type laser polarzing lens and preparation method thereof |
| CN1394358A (en) * | 2000-01-10 | 2003-01-29 | 电子科学工业公司 | Laser system and method for processing memory link with burst of laser pulses having ultrashort pulsewidths |
| CN1839576A (en) * | 2003-08-19 | 2006-09-27 | 电子科学工业公司 | Generating sets of tailored laser pulses |
| CN101214395A (en) * | 2008-01-02 | 2008-07-09 | 西南交通大学 | Inorganic material surface biological method |
| CN102086502A (en) * | 2010-11-22 | 2011-06-08 | 福建福晶科技股份有限公司 | Plating method for increasing laser damage threshold of high-reflectivity optical thin film |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59183044A (en) * | 1983-04-04 | 1984-10-18 | Toyota Motor Corp | "fuel cut" controlling apparatus for internal-combustion engine |
| JPH01215969A (en) * | 1988-02-23 | 1989-08-29 | Fujitsu Ltd | Formation of tantalum oxide film |
| JP4045816B2 (en) * | 2002-02-20 | 2008-02-13 | 凸版印刷株式会社 | Method for forming porous titanium oxide thin film-coated film |
-
2012
- 2012-03-28 CN CN2012100849264A patent/CN102605333B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4002545A (en) * | 1976-02-09 | 1977-01-11 | Corning Glass Works | Method of forming a thin film capacitor |
| CN1064157A (en) * | 1991-02-04 | 1992-09-02 | 浙江大学 | Mistuning type laser polarzing lens and preparation method thereof |
| CN1394358A (en) * | 2000-01-10 | 2003-01-29 | 电子科学工业公司 | Laser system and method for processing memory link with burst of laser pulses having ultrashort pulsewidths |
| CN1839576A (en) * | 2003-08-19 | 2006-09-27 | 电子科学工业公司 | Generating sets of tailored laser pulses |
| CN101214395A (en) * | 2008-01-02 | 2008-07-09 | 西南交通大学 | Inorganic material surface biological method |
| CN102086502A (en) * | 2010-11-22 | 2011-06-08 | 福建福晶科技股份有限公司 | Plating method for increasing laser damage threshold of high-reflectivity optical thin film |
Non-Patent Citations (2)
| Title |
|---|
| "不同方法制备的Ta2O5薄膜光学性能和激光损伤阈值的对比分析";许程等;《中国激光》;20081030;第35卷(第10期);第1595-1599页 * |
| 许程等."不同方法制备的Ta2O5薄膜光学性能和激光损伤阈值的对比分析".《中国激光》.2008,第35卷(第10期),第1595-1599页. |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102605333A (en) | 2012-07-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102605333B (en) | Preparation method for tantalum oxide film with high laser damage threshold under high-temperature environment | |
| CN103173720B (en) | Preparation method for waterproof laser film | |
| Liu et al. | Graphene oxide absorber for 2 µm passive mode‐locking Tm: YAlO3 laser | |
| CN103388917B (en) | A kind of solar selectively absorbing coating and its preparation method | |
| CN102581478A (en) | Device and method for ultrafast picosecond pulse laser machining of super-hydrophobicity micro-structure surface | |
| CN103774104B (en) | A kind of device of ion beam magnetron sputtering composite film coating | |
| CN101892461A (en) | Laser direct-writing membrane and method for directly writing micro/nano graph by laser | |
| Du et al. | Laser-induced damage properties of antireflective porous glasses | |
| CN103993261A (en) | Preparation method of transparent conductive thin film with grating structure | |
| CN109234673A (en) | A kind of high damage threshold anti-reflection film method prepared containing passivation layer | |
| CN106435487A (en) | Preparation method of lithium triborate crystal high-laser-damaged-threshold antireflection film | |
| CN110548466A (en) | Femtosecond laser repair method for atomic-level defects of deposited layer | |
| Yuan et al. | A Passively Q-switched Tm: YAlO3 bulk laser with a MXene Ti3C2Tx saturable absorber | |
| Li et al. | Ultraflat Langmuir–Blodgett assembled graphene oxide saturable-absorber films for pulsed near-infrared laser generation | |
| CN106087055B (en) | A kind of yttrium aluminate composite crystal and preparation method thereof | |
| Cai et al. | Preparation of high laser-induced damage threshold sol-gel Nb2O5 films with different additives | |
| Heise et al. | Directly induced ablation of metal thin films by ultrashort laser pulses | |
| Guo et al. | Effect of ammonia treatment on laser-induced damage of nano-porous silica film | |
| 李玉海 et al. | Research progress on contamination damage and cleaning technology of large-aperture diffraction grating | |
| Chen et al. | Scalable open-air deposition of compact ETL TiO x on perovskite for fullerene-free solar cells | |
| Kong et al. | Investigation of fs-laser induced damage on high reflection mirrors used for 800 nm broadband pulse compression gratings | |
| Sun et al. | A recycling strategy of ion beam removal and recoating of sol-gel film on fused silica surface | |
| Krause et al. | Selective femtosecond laser lift-off process for scribing in thin-film photovoltaics | |
| CN101710222A (en) | Frequency tripling high-reflection film with high laser damage threshold | |
| Gallais et al. | An exhaustive study of laser damage in ion beam sputtered pure and mixture oxide thin films at 1030 nm with 500 fs pulse durations |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C53 | Correction of patent for invention or patent application | ||
| CB03 | Change of inventor or designer information |
Inventor after: Xu Cheng Inventor after: Liu Jiongtian Inventor after: Yang Shuai Inventor after: Ma Hao Inventor after: Wang Jifei Inventor after: Guo Litong Inventor after: Zhang Hanzhuo Inventor after: Yin Shibin Inventor after: Li Dawei Inventor after: Qiang Yinghuai Inventor before: Xu Cheng Inventor before: Yang Shuai Inventor before: Wang Jifei Inventor before: Guo Litong Inventor before: Zhang Hanzhuo Inventor before: Yin Shibin Inventor before: Li Dawei Inventor before: Qiang Yinghuai Inventor before: Liu Jiongtian |
|
| COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: XU CHENG YANG SHUAI WANG JIFEI GUO LITONG ZHANG HANZHUO YIN SHIBIN LI DAWEI QIANG YINGHUAI LIU JIONGTIAN TO: XU CHENG YANG SHUAI MA HAO WANG JIFEI GUO LITONG ZHANG HANZHUO YIN SHIBIN LI DAWEI QIANG YINGHUAI LIU JIONGTIAN |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20131127 Termination date: 20160328 |