CN102543662B - The hot silicon chip heating system coiling and apply it - Google Patents
The hot silicon chip heating system coiling and apply it Download PDFInfo
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- CN102543662B CN102543662B CN201010618374.1A CN201010618374A CN102543662B CN 102543662 B CN102543662 B CN 102543662B CN 201010618374 A CN201010618374 A CN 201010618374A CN 102543662 B CN102543662 B CN 102543662B
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Abstract
The invention provides the silicon chip heating system that it was coiled and applied to a kind of heat.Heat is coiled and is arranged in accommodating body and connects air exhauster and air inlet fan respectively.Heat dish has the many groups of thermals treatment zone be evenly distributed, and has venthole and air admission hole in each thermal treatment zone.Venthole is connected to air exhauster, and air admission hole arranges around pore and is connected to air inlet fan, and air inlet fan provides hot-air.Thus, silicon chip heat time can be suspended in heat dish above and directly do not contact with heat dish, avoid silicon chip back side be heated dish pollute, also can not occur silicon chip explosion problem.
Description
Technical field
The present invention has about a kind of silicon chip heating technique, relates to the silicon chip heating system that it was coiled and applied to a kind of heat especially.
Background technology
In the figure transfer process that semiconductor chip is produced, the coating of photoresist, soft baking and rear baking are very important steps.Soft baking is by the solvent evaporated away in the photoresist that coats, to improve its adhesion, uniformity, etch resistance, thus improves the control of live width.At present, the photoresist of 193nm and 248nm mask aligner is all optical amplifier photoresist.Light acid (H+) can be produced after the exposure of optical amplifier photoresist, then dry the inside that the H+ of generation can be diffused into photoresist, make the photoresist of exposed portion become the material of alkali soluble.Usually, the length of rear baking time and uniformity can have a strong impact on size and the uniformity of live width.In baking process, if the solvent evaporates speed being in photoresist surface is faster than the solvent evaporates speed of photoresist inside, when the photoresist on surface has cured, bake and bank up with earth if proceed again, photoresist surface will become coarse, produce so-called " sandwich " consequence.
For this reason, last century the eighties, hot plate type curing range arises at the historic moment, to bake and bank up with earth technique after completing silicon chip gluing.The curing range of this form be adopt a slice to connect a slice cure mode separately.From the view point of calorifics principle, it is the contact surface coiled with heat by silicon chip, and by thermal energy conduction to silicon chip back side, the organic solvent in photoresist then leaves photoresist by interior movement to surface.
But hot plate type curing range is all contact, often can because silicon chip placement location is good or silicon chip back side or heat dish have particle and produces silicon chip and to be heated uneven problem, thus cause live width uneven.Further, if some silicon chip back side is messy, also can pollute heat dish, and then cause follow-up other silicon chip back sides carrying out baking and banking up with earth technique also can be subject to the pollution of heat dish.Especially, when advanced package technologies is used widely in recent years, this process requirements glue is thick very thick, have up to 150um, the soft baking time generally needs tens minutes.According to the mode of above-mentioned direct contact, some special silicon chip time serious, can be caused as the explosion of lithium niobate substrate.
Person is a kind of hot plate type front drying device as shown in Figure 1, and it comprises heat dish body 4, heater 11a, temperature-detecting device 9, body of heater, the push rod 3 with three vertical shanks, drive push rod 3 to carry elevating mechanism (comprising screw mandrel 5, motor 7 and encoder 6) and servo-driver 8 that silicon chip 2 moves up and down.This kind of hot plate type front drying device shown in Fig. 1, is characterized in length and the heating rate of energy strict temperature control time, can obtains excellent glued membrane characteristic, thus can obtain excellent lithographic results.But it also brings new problem.Along with improving constantly of technique, die size becomes increasing, and present main flow is the silicon chip of 12 cun, can develop into 18 cun soon.According to the hot plate type front drying device shown in Fig. 1, because silicon chip 12 edge can not get supporting, can Bending Deformation be caused when silicon chip 12 heats, and then the flatness of silicon chip 12 and photoresist can be affected.In addition, between three push rods 3, highly slightly difference will cause the inclination of silicon chip 12, cause be heated uneven.And directly contact with silicon chip 12 due to push rod 3, the part of contact also can be heated uneven, thus finally affects the uniformity of live width.
Summary of the invention
A kind of heat is the object of the present invention is to provide to coil and apply its silicon chip heating system, to improve the disappearance of prior art.
For solveing the technical problem, the invention provides a kind of heat dish, to be arranged in accommodating body and to connect air exhauster and air inlet fan respectively.Heat dish has the many groups of thermals treatment zone be evenly distributed, and has venthole and air admission hole in each thermal treatment zone.Venthole is connected to air exhauster, and air admission hole arranges around pore and is connected to air inlet fan, and air inlet fan provides hot-air.
In one embodiment of this invention, heat dish also has at least one perforation.
In one embodiment of this invention, the quantity of perforation is three, and distribution triangular in shape.
The present invention also provides a kind of silicon chip heating system, comprises accommodating body, air exhauster, air inlet fan and heat dish.Heat dish is arranged in accommodating body.Heat dish has the many groups of thermals treatment zone be evenly distributed, and has venthole and air admission hole in each thermal treatment zone.Venthole is connected to air exhauster, and air admission hole arranges around pore and is connected to air inlet fan, and air inlet fan provides hot-air.
In one embodiment of this invention, silicon chip heating system also comprises first heater, is connected to heat dish.
In one embodiment of this invention, silicon chip heating system also comprises secondary heating mechanism, is connected to air inlet fan.
In one embodiment of this invention, silicon chip heating system also comprises the first temperature-detecting device and temperature controller.First temperature-detecting device is arranged at air admission hole, and temperature controller is connected to the first temperature-detecting device and secondary heating mechanism.
In one embodiment of this invention, silicon chip heating system also comprises the second temperature-detecting device, is arranged at secondary heating mechanism, and is connected to temperature controller.
In one embodiment of this invention, silicon chip heating system also comprises multiple automatic pressure regulator, is arranged at venthole and the air admission hole of each thermal treatment zone respectively.
In one embodiment of this invention, silicon chip heating system also comprises silicon chip protective device, is arranged at described heat dish top, with the silicon chip above heat dish.
In one embodiment of this invention, silicon chip heating system also comprises multiple position transducer, is arranged at described heat dish top, with the position of the silicon chip above sense heat dish.
In one embodiment of this invention, heat dish also has at least one perforation.
In one embodiment of this invention, the quantity of perforation is three, and distribution triangular in shape.
In one embodiment of this invention, silicon chip heating system also comprises at least one push rod and drive unit.Push rod is arranged in perforation movably, and drive unit is connected to push rod.
In one embodiment of this invention, the top of accommodating body has aspirating hole.
Compared with prior art, beneficial effect of the present invention can be:
Provided by the invention heat dish and silicon chip heating system in, heat dish has multiple thermal treatment zone, and in each thermal treatment zone, there is venthole and air admission hole, with the state making silicon chip be in stress balance when heating, thus the top of heat dish can be suspended in and directly not contact with heat dish, avoid silicon chip back side be heated dish pollute, also can not occur silicon chip explosion problem.Further, because the thermal treatment zone is evenly distributed, therefore, can guarantee that whole silicon chip is heated evenly, avoid the problem of silicon chip edge Bending Deformation.
For described and other objects, features and advantages of the present invention can be become apparent, preferred embodiment cited below particularly, and coordinate accompanying drawing, be described in detail below.
Accompanying drawing explanation
Fig. 1 is a kind of structural representation of known heat dish device;
Fig. 2 is the schematic diagram of the silicon chip heating system of a preferred embodiment of the present invention;
Fig. 3 is the vertical view of the heat dish of a preferred embodiment of the present invention;
Fig. 4 is the schematic diagram of the Temperature Detector of the heat dish of a preferred embodiment of the present invention;
Fig. 5 is that the silicon chip heating system of application a preferred embodiment of the present invention carries out baking and banking up with earth the flow chart of heating.
Embodiment
Fig. 2 is the schematic diagram of the silicon chip heating system of a preferred embodiment of the present invention.Fig. 3 is the vertical view of the heat dish of a preferred embodiment of the present invention.Please refer to Fig. 2 and Fig. 3.In the present embodiment; silicon chip heating system 1 is for heating silicon chip 2, and it comprises accommodating body 10, heat dish 11, air inlet fan 12, air exhauster 13, first heater 14, first temperature-detecting device 15, temperature controller 16, second temperature-detecting device (not shown), automatic pressure regulator (not shown), silicon chip protective device 19, position transducer 20, push rod 21, drive unit 22 and secondary heating mechanism 23.But the present invention is not limited in any way this.
In the present embodiment, accommodating body 10 is the body of heater of silicon chip heating system 1, and its wall have frame loops around.Silicon chip 2 can be positioned in accommodating body 10 to carry out baking and banking up with earth technique.The top of accommodating body 10 has aspirating hole 101, to be taken away by volatile matter in time curing in heating process of silicon chip 2.In addition, the sidewall of accommodating body 10 can be provided with the door (not shown) passed in and out for silicon chip 2, pick and place silicon chip 2 to facilitate manipulator.But the present invention is not limited in any way this.
In the present embodiment, heat dish 11 is arranged in accommodating body 10.As shown in Figure 3, heat dish 11 has the many groups of thermals treatment zone be evenly distributed 110.Have venthole 1101 and air admission hole 1102 in each thermal treatment zone 110, air admission hole 1102 is arranged around pore 1101.In this, venthole 1101 can be circular hole, and air admission hole 1102 can be the annulus arranged around circular hole.
In the present embodiment, venthole 1101 is connected to air exhauster 13.Thus, air exhauster 13 each venthole 1101 to heat dish 11 can be utilized to vacuumize, to produce downward pull of vacuum to the silicon chip 2 above heat dish 11.In addition, air admission hole 1102 is connected to air inlet fan 12, upwards to carry hot-air.Thus, namely the silicon chip 2 of top is subject to the hot-air buoyancy upwards via air admission hole 1102 input.In the present embodiment, the buoyancy size of this hot-air equals the gravity of pull of vacuum and silicon chip 2 self, thus makes to bake and bank up with earth in heating process whole, and silicon chip 2 can be suspended in the top of heat dish 11, and does not contact with heat dish 11.
In the present embodiment, air admission hole 1102 place can be provided with the first temperature-detecting device 15, to carry out temperature detection to the hot-air of heating silicon chip 2, thus is convenient to the temperature controlling silicon chip 2.In this, the first temperature-detecting device 15 can be Pt100 thermal resistance or thermocouple.But the present invention is not limited in any way this.In addition, each air admission hole 1102 is also respectively arranged with automatic pressure regulator (not shown) with venthole 1101 place, and to guarantee that silicon chip 2 can keep suspended state, namely the buoyancy size of hot-air equals the gravity of pull of vacuum and silicon chip 2 self all the time.But the present invention is not limited in any way this.
In the present embodiment, because the thermal treatment zone 110 is evenly distributed, therefore, in heating process, silicon chip 2 there will not be the situation swung up and down, and being heated also can be more even.In addition, slide to prevent it for silicon chip 2 can be held better, the thermal treatment zone 110 being positioned at heat dish 11 centre positions can be relatively large, and the venthole 1101 of venthole 1101 other thermal treatment zone 110 compared with the size of air admission hole 1102 of the thermal treatment zone 110 namely wants large with the size of air admission hole 1102.But the present invention is not limited in any way this.
In the present embodiment, heat dish 11 can have three perforation 1103 of distribution triangular in shape in position therebetween.In this, push rod 21 is three with may correspond to, and is arranged in corresponding perforation 1103 respectively movably, more firmly to upload, to download and to bake and bank up with earth lifting silicon chip 2 in heating process.But the present invention is not limited in any way the number of the push rod 21 of perforation 1103 and correspondence and position.In other embodiments, its number also can be only more than one or three.
In the present embodiment, push rod 21 can be connected to drive unit 22, to work under the driving of drive unit 22.But the present invention is not limited in any way this.In other embodiments, the lifting of push rod 21 can directly by personnel's Non-follow control.
In the present embodiment, heat dish 11 can connect first heater 14.In this, first heater 14 can be bar-shaped or laminated structure, and is arranged in heat dish 11, with heat hot dish 11.But the present invention is not limited in any way the structure of first heater 14 and setting position.
In addition, please refer to Fig. 4.Fig. 4 is the schematic diagram of the Temperature Detector of the heat dish of a preferred embodiment of the present invention.In the present embodiment, Temperature Detector 24 can select the probe for semiconductor technology measurement.This Temperature Detector 24 is actually a silicon chip uniformly inlaying multiple minisize thermoelectric resistance detector 241.During test, can by this Temperature Detector 24 (i.e. silicon chip) air supporting above heat dish 11, and make the center of circle of the center of circle of probe and heat dish 11 on same vertical axis, thus record the temperature at heat dish 11 diverse location places.But the present invention is not limited in any way this.
Please continue to refer to Fig. 2 and Fig. 3.In the present embodiment, secondary heating mechanism 23 is for adding hot-air, and secondary heating mechanism 23 is connected to air inlet fan 12, so that the hot-air after heating is sent into air admission hole 1102 by air inlet fan 12.But the present invention is not limited in any way this.In other embodiments, when there being heated air source, also secondary heating mechanism 23 can not being set, and directly the hot-air of heated air source being sent into air admission hole 1102 by air inlet fan 12.
In the present embodiment, can be provided with the second temperature-detecting device (not shown) in secondary heating mechanism 23, it is for detecting the temperature of hot-air in secondary heating mechanism 23, namely enters the temperature of hot-air before air inlet fan 12.Thus, in the present embodiment by detecting secondary heating mechanism 23 and the hot air temperature in air admission hole 1102 simultaneously, more accurate temperature can be provided to control.In addition, in the present embodiment, the second temperature-detecting device also can be Pt100 thermal resistance or thermocouple.But the present invention is not limited in any way this.
In the present embodiment, temperature controller 16 can be a microprocessor, it has multiple pin, is connected to Temperature Detector 24, first temperature-detecting device 15, the second temperature-detecting device (not shown) of Fig. 4, first heater 14 and secondary heating mechanism 23 respectively.Specifically, the temperature value that temperature controller 16 can detect according to Temperature Detector 24, controls the heating-up temperature of first heater 14.Meanwhile, according to the temperature value of the hot-air that the first temperature-detecting device 15 and the second temperature-detecting device (not shown) detect, temperature controller 16 can control the heating-up temperature of secondary heating mechanism 23.In the present embodiment, by controlling first heater 14 and the heating-up temperature of secondary heating mechanism 23, temperature controller 16 guarantees that heat is coiled 11 and is consistent with the temperature of hot-air.Thus, hot-air does not have thermal loss when overheated dish 11, thus can guarantee silicon chip 2 be heated evenly.
In the present embodiment, silicon chip protective device 19 is arranged around heat dish 11, and its surface area around the surface area size formed and silicon chip 2 is roughly equal, thus when air supporting occurs abnormal, can prevent silicon chip 2 landing.In this, silicon chip protective device 19 can be formed in one.But the present invention is not limited in any way this.In other embodiments, it also can be formed by four incorporating aspects.
In the present embodiment, multiple position transducer 20 is arranged at the surrounding of heat dish 11 respectively, to detect the position of silicon chip 2 from four direction, guarantees that the position of silicon chip 2 above heat dish 11 remains unchanged.In this, position transducer 20 can be infrared ray sensor.But the present invention is not limited in any way the type of position transducer 20 and number.
Fig. 5 is that the silicon chip heating system of application a preferred embodiment of the present invention carries out baking and banking up with earth the flow chart of heating.Please also refer to Fig. 2 and Fig. 5.When silicon chip heating system 1 pair of silicon chip 2 that application the present embodiment provides bakes and banks up with earth heating, first can regulate first heater 14 and the heating-up temperature of secondary heating mechanism 23, make heat dish 11 and hot-air be stabilized in the temperature value of setting.
Subsequently, the door on the sidewall of accommodating body 10 can be opened, utilize manipulator to be sent in accommodating body 10 by silicon chip 2, and be positioned on three push rods 21.Now, push rod 21 is in extreme higher position.
In the present embodiment, be positioned at silicon chip 2 after on the push rod 21 being in extreme higher position, drive unit 22 can be utilized to drive push rod 21 to drop to the very near position of distance heat dish 11.Now, the door opened can be shut.Meanwhile, open air inlet fan 12 and air exhauster 13, control silicon chip 2 and keep suspended state.Afterwards, can decline push rod 21, bakes and banks up with earth heating process with what carry out silicon chip 2.The volatile matter produced in the process can be discharged by the aspirating hole 101 at accommodating body 10 top.
In the present embodiment, bake and bank up with earth after heating process terminates when silicon chip 2, drive unit 22 drives push rod 21 to rise to withstand silicon chip 2.Subsequently, close hot-air and vacuum by pressure regulating valve, and open the door of accommodating body 10 sidewall, utilize manipulator to be taken away by silicon chip 2, repeat the heating that above-mentioned steps can carry out lower a slice silicon chip.
According to the silicon chip heating system that present pre-ferred embodiments provides, silicon chip can be avoided when heating silicon chip to coil with heat and directly contact, also head on silicon chip without push rod, thus it is more even that silicon chip can be made to be heated, and can not cause the Bending Deformation of silicon chip.Silicon chip back side also can not be heated to coil and pollute.In addition, because heat dish itself also can be heated, and keep the temperature identical with hot-air, therefore can guarantee that hot-air does not have thermal loss when overheated dish, thus make the homogeneous temperature of silicon chip consistent.
Although the present invention discloses as above with preferred embodiment; so itself and be not used to limit the present invention; have in any art and usually know the knowledgeable; without departing from the spirit and scope of the present invention; when doing a little change and retouching, therefore protection scope of the present invention is when being as the criterion depending on those as defined in claim.
Claims (15)
1. a heat dish, to be arranged in accommodating body and to connect air exhauster and air inlet fan respectively, it is characterized in that, described heat dish has the many groups of thermals treatment zone be evenly distributed, and there is in the thermal treatment zone described in each venthole and air admission hole, described venthole is connected to described air exhauster, and each described air admission hole arranges around each described venthole and is connected to described air inlet fan, and described air inlet fan provides hot-air; The state of described heat dish for making silicon chip be in stress balance when heating, and be suspended in the top of described heat dish, to make described heat dish, the photoresist that described silicon chip surface applies is toasted.
2. heat dish according to claim 1, is characterized in that, described heat dish also has at least one perforation.
3. heat dish according to claim 2, it is characterized in that, the quantity of described perforation is three, and distribution triangular in shape.
4. a silicon chip heating system, is characterized in that, comprising:
Accommodating body;
Air exhauster;
Air inlet fan; And
Heat dish, be arranged in described accommodating body, described heat dish has the many groups of thermals treatment zone be evenly distributed, and there is in the thermal treatment zone described in each venthole and air admission hole, described venthole is connected to described air exhauster, described air admission hole arranges around described venthole and is connected to described air inlet fan, and described air inlet fan provides hot-air; The state of described heat dish for making silicon chip be in stress balance when heating, and be suspended in the top of described heat dish, to make described heat dish, the photoresist that described silicon chip surface applies is toasted.
5. silicon chip heating system according to claim 4, is characterized in that, described silicon chip heating system also comprises first heater, is connected to described heat dish.
6. silicon chip heating system according to claim 4, is characterized in that, described silicon chip heating system also comprises secondary heating mechanism, is connected to described air inlet fan.
7. silicon chip heating system according to claim 6, it is characterized in that, described silicon chip heating system also comprises the first temperature-detecting device and temperature controller, described first temperature-detecting device is arranged at described air admission hole, and described temperature controller is connected to described first temperature-detecting device and described secondary heating mechanism.
8. silicon chip heating system according to claim 7, is characterized in that, described silicon chip heating system also comprises the second temperature-detecting device, is arranged at described secondary heating mechanism, and is connected to described temperature controller.
9. silicon chip heating system according to claim 4, is characterized in that, described silicon chip heating system also comprises multiple automatic pressure regulator, is arranged at the described venthole of the thermal treatment zone described in each and described air admission hole respectively.
10. silicon chip heating system according to claim 4, is characterized in that, described silicon chip heating system also comprises silicon chip protective device, is arranged at described heat dish top, with the silicon chip around described heat dish top.
11. silicon chip heating systems according to claim 4, is characterized in that, described silicon chip heating system also comprises multiple position transducer, are arranged at described heat dish top, to sense the position of the silicon chip of described heat dish top.
12. silicon chip heating systems according to claim 4, is characterized in that, described heat dish also has at least one perforation.
13. silicon chip heating systems according to claim 12, is characterized in that, the quantity of described perforation is three, and distribution triangular in shape.
14. silicon chip heating systems according to claim 12, is characterized in that, described silicon chip heating system also comprises at least one push rod and drive unit, and described push rod is arranged in described perforation movably, and described drive unit is connected to described push rod.
15. silicon chip heating systems according to claim 4, is characterized in that, the top of described accommodating body has aspirating hole.
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| CN105129428A (en) * | 2015-08-06 | 2015-12-09 | 哈尔滨工业大学 | Air cushion carrying device of secondary platform |
| CN105316642B (en) * | 2015-11-20 | 2018-06-12 | 苏州赛森电子科技有限公司 | Silicon chip heating unit in sputtering technology |
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| CN1606134A (en) * | 2003-10-06 | 2005-04-13 | 日东电工株式会社 | Method of separating semiconductor wafer, and separating apparatus using the same |
| CN101917783A (en) * | 2010-09-10 | 2010-12-15 | 中国科学院上海微系统与信息技术研究所 | Three-dimensional micro-heater comprising circular arc-shaped heating film region with adjustable radian and method |
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| US6336775B1 (en) * | 1998-08-20 | 2002-01-08 | Matsushita Electric Industrial Co., Ltd. | Gas floating apparatus, gas floating-transporting apparatus, and thermal treatment apparatus |
| KR20030003471A (en) * | 2001-07-02 | 2003-01-10 | 삼성전자 주식회사 | A bake apparatus for semiconductor processing |
| US7427329B2 (en) * | 2002-05-08 | 2008-09-23 | Asm International N.V. | Temperature control for single substrate semiconductor processing reactor |
| JP4459023B2 (en) * | 2004-11-08 | 2010-04-28 | パナソニック株式会社 | Substrate holding device |
| JP4553376B2 (en) * | 2005-07-19 | 2010-09-29 | 東京エレクトロン株式会社 | Floating substrate transfer processing apparatus and floating substrate transfer processing method |
| JP4988401B2 (en) * | 2007-03-29 | 2012-08-01 | 大日本スクリーン製造株式会社 | Substrate heat treatment equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1606134A (en) * | 2003-10-06 | 2005-04-13 | 日东电工株式会社 | Method of separating semiconductor wafer, and separating apparatus using the same |
| CN101917783A (en) * | 2010-09-10 | 2010-12-15 | 中国科学院上海微系统与信息技术研究所 | Three-dimensional micro-heater comprising circular arc-shaped heating film region with adjustable radian and method |
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