CN102543591A - MEMS (micro-electro-mechanical systems) switch and manufacturing method thereof - Google Patents
MEMS (micro-electro-mechanical systems) switch and manufacturing method thereof Download PDFInfo
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- CN102543591A CN102543591A CN2010106081682A CN201010608168A CN102543591A CN 102543591 A CN102543591 A CN 102543591A CN 2010106081682 A CN2010106081682 A CN 2010106081682A CN 201010608168 A CN201010608168 A CN 201010608168A CN 102543591 A CN102543591 A CN 102543591A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
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Abstract
The invention provides an MEMS (micro-electro-mechanical systems) switch and a manufacturing method thereof. The MEME switch comprises a semiconductor substrate, a switch cavity, a first group of switch contacts, a second group of switch contacts and a mechanical arm, wherein the switch cavity is positioned on the semiconductor substrate and comprises a bottom dielectric layer and a top dielectric layer, the first group of switch contacts are positioned on the bottom dielectric layer, and the second group of switch contacts are positioned on the top dielectric layer; the mechanical arm comprises a fixed end fixed on the bottom dielectric layer of the switch cavity and a suspended free end, and a knife thrower is formed on the free end; the knife thrower is corresponding to the positions of the first group of switch contacts and the second group of switch contacts; and when a driving electric field is applied in the switch cavity, the mechanical arm is bent due to the action of the driving electric field, and the knife thrower is in contact with the first group of switch contacts or the second group of switch contacts. The MEMS switch provided by the invention has the characteristics of simple structure, sensitive response, and easiness in manufacture.
Description
Technical field
The present invention relates to microelectromechanicmachine machine system (MEMS) device and make the field, relate in particular to mems switch of a kind of single-pole double throw and preparation method thereof.
Background technology
(Micro-Electro-Mechanical Systems is a kind of integrability production MEMS), integrates the microdevice or the system of micro mechanism, microsensor, miniature actuator and signal processing and control circuit in the microelectromechanicmachine machine system.It is along with the development of semiconductor integrated circuit Micrometer-Nanometer Processing Technology and ultraprecise Machining Technology grows up.The microelectronic component that adopts the MEMS technology has the wide application prospect of ten minutes in Aeronautics and Astronautics, environmental monitoring, biomedicine and all spectra that almost people touched.
With respect to traditional mechanical structure, the MEMS size of devices is littler, and maximum is no more than one centimetre, even only is several microns, and device layer thickness wherein is just more small.Because having adopted is main semi-conducting material with silicon, therefore can utilize mature technology, technology in the semiconductor integrated circuit production in a large number, carry out low-cost batch production.Wherein micro mechanical structure is the most important component of MEMS device as sensing, transmission and motion; Micro mechanical structure need be arranged in the enclosure space usually; To avoid receiving external environment influence, comprise fixing support section and free end movable and that suspend.Receive under the effect of external magnetic field power or electric field force bending when said micro mechanical structure, its free end contacts with the zones of different of enclosure space, and realizes electrically connecting, and said MEMS device just can play the effect of switch.
Switch can be divided into single-pole single-throw switch (SPST) or single-pole double-throw switch (SPDT) according to the difference of structure; The latter can play the effect that switch in the path; Thereby in circuit and signal transmission system, having application widely, traditional single-pole double-throw switch (SPDT) device volume is bigger, is difficult to be integrated in the chip.And utilize MEMS element manufacturing single-pole double-throw switch (SPDT), can greatly improve the integrated level of device.The content of more mems switches about single-pole double throw can be the United States Patent (USP) of US60/561192 referring to the patent No..
Micro day by day along with the increasingly sophisticated and device of applied environment provides structure more simple, and it is more easy to make, and the mems switch that is easier to the device micro becomes one of developing direction of MEMS technology.
Summary of the invention
The object of the present invention is to provide a kind of mems switch and preparation method thereof with single-pole double throw function, simple in structure and be easy to manufacture.
Mems switch of the present invention comprises:
Semiconductor substrate; Be positioned at the switch cavity on the Semiconductor substrate, said switch cavity comprises bottom dielectric layer and top medium layer;
Be positioned at first group of switch contact of said bottom dielectric layer, comprise the first input contact and first output contact; Be positioned at second group of switch contact of said top medium layer, comprise the second input contact and second output contact;
Also comprise mechanical arm, said mechanical arm comprises the stiff end that is fixed on the switch cavity bottom dielectric layer and the free end of suspension, is formed with on the said free end and throws cutter; It is said that to throw cutter corresponding with the position of said first group of switch contact and second group of switch contact;
When in the switch cavity, applying driving electric field; Said mechanical arm is activated electric field action and bending; Make that throwing cutter contact bottom dielectric layer is electrically connected the said first input contact with first output contact, perhaps contact the top medium layer the said second input contact and second output contact are electrically connected.
Optional, said mechanical arm is the zigzag structure, and the one of which end is a stiff end, and the other end is a free end, and said stiff end and free end have difference in height.
Be formed with the bonding pad on the said bottom dielectric layer, said bonding pad is connected with the stiff end of mechanical arm.
Said mems switch also comprises electric pole plate that is formed at said top medium layer and the lower electrode plate that is formed at said bottom dielectric layer, and the free end of said mechanical arm is aimed at said lower electrode plate and electric pole plate in vertical direction.
Optional, said lower electrode plate is arranged at the surface of said bottom dielectric layer, and said electric pole plate is arranged at the opposite side surface of said top medium layer with respect to bottom dielectric layer.
Said mechanical arm comprises supporting construction and conductive electrode, and said conductive electrode extends to free end from stiff end along the supporting construction surface, and insulate with the said cutter of throwing.
Optional, said mechanical arm is a bridge shape structure, and its two ends are stiff end, and the middle part is a free end.Be formed with first bonding pad and second bonding pad on the said bottom dielectric layer, said first bonding pad and second bonding pad are symmetrical about said first group of switch contact, and are connected with two stiff ends of mechanical arm respectively.
Said mems switch also comprises and being formed on the said top medium layer and about first electric pole plate and second electric pole plate of second group of switch contact symmetry, is formed on the bottom dielectric layer and about first lower electrode plate and second lower electrode plate of first group of switch contact symmetry; The free end of said mechanical arm is aimed at said above-mentioned lower electrode plate and electric pole plate in vertical direction.
Optional, said first lower electrode plate and second lower electrode plate are formed at the surface of said bottom dielectric layer, and said first electric pole plate and second electric pole plate are formed at the opposite side surface of said top medium layer with respect to bottom dielectric layer.
Said mechanical arm comprises supporting construction and first conductive electrode, second conductive electrode; Said first conductive electrode and second conductive electrode are along the surface of said supporting construction; Two stiff ends from mechanical arm extend to the middle part free end respectively, and all insulate with the said cutter of throwing.
The present invention also provides a kind of manufacture method of mems switch, comprising:
Semiconductor substrate is provided, on said Semiconductor substrate, forms bottom dielectric layer; Form first group of switch contact, lower electrode plate and bonding pad on the surface of said bottom dielectric layer;
Form patterned sacrificial dielectric layer down on the surface of above-mentioned semiconductor structure, said sacrificial dielectric layer down exposes bonding pad and part bottom dielectric layer;
On the part surface of said sacrificial dielectric layer down, form the mechanical arm that is connected with said bonding pad;
Sacrificial dielectric layer on the surface formation of above-mentioned semiconductor structure is patterned, the said sacrificial dielectric layer that goes up is connected with following sacrificial dielectric layer;
The sacrificial dielectric laminar surface forms the top medium layer on said;
Form second group of switch contact, electric pole plate at said top medium laminar surface; Said second group of switch contact is corresponding with the position of first group of switch contact, and said electric pole plate is corresponding with the position of lower electrode plate;
The said top medium layer of etching forms some through holes that expose sacrificial dielectric layer, through said through hole, and sacrificial dielectric layer and following sacrificial dielectric layer in the removal.
Wherein, saidly form first group of switch contact, lower electrode plate and bonding pad at the bottom dielectric laminar surface and comprise:
Form the first metal layer at the bottom dielectric laminar surface;
The said the first metal layer of etching forms first group of switch contact, lower electrode plate and bonding pad;
At above-mentioned semiconductor structure surface backfill dielectric, improve the apparent height of bottom dielectric layer;
Carry out cmp, make that the surface of bottom dielectric layer is concordant with the top of said first group of switch contact, lower electrode plate and bonding pad.
Said bonding pad is positioned at the outside of lower electrode plate with respect to first group of switch contact, and said bonding pad, lower electrode plate and first group of switch contact are corresponding with the position of the mechanical arm of follow-up formation.
Sacrificial dielectric layer comprises under the said formation:
Form first sacrifice layer at the bottom dielectric laminar surface;
Said first sacrifice layer of etching forms detent, and said detent exposes first group of switch contact;
Form second sacrifice layer in first sacrificial layer surface, said second sacrificial layer thickness equates with first sacrifice layer, makes said second sacrifice layer fill and lead up said detent, and forms first groove at said detent place;
Said second sacrifice layer of etching and first sacrifice layer expose the bonding pad of bottom dielectric laminar surface, form sacrificial dielectric layer down.
Said formation mechanical arm comprises:
Part surface in following sacrificial dielectric layer and bonding pad utilizes mask to carry out selective deposition and forms supporting medium layer, and said supporting medium layer defines the shape of said mechanical arm;
In said bonding pad and the Supporting Media laminar surface form second metal level;
Said second metal level of etching forms conductive electrode and throws cutter, and the said cutter of throwing comprises second metal level that is filled in said first groove, and said conductive electrode is connected with the bonding pad, and extends to the said cutter of throwing from the bonding pad along the Supporting Media laminar surface.
Saidly form second group of switch contact, electric pole plate at the top medium laminar surface and comprise:
The said top medium layer of etching forms second groove, said second groove alignment below throw cutter, and run through the top medium layer;
Form the 3rd metal level at said top medium laminar surface;
Said the 3rd metal level of etching forms second group of switch contact and electric pole plate; Said electric pole plate is aimed at the lower electrode plate of below, and said second group of switch contact aimed at the cutter of throwing of below, and said second group of switch contact comprises the 3rd metal level that is filled in second groove.
Optional, the material of said sacrificial dielectric layer down and last sacrificial dielectric layer is amorphous carbon, and thickness is identical.Sacrificial dielectric layer and following sacrificial dielectric layer comprise in the said removal: aerating oxygen in said through hole, and adopt cineration technics to remove said sacrificial dielectric layer and the following sacrificial dielectric layer of going up, the heating-up temperature of said cineration technics is 100 ℃～350 ℃.
Optional, said mems switch manufacture method also is included in said top medium laminar surface and forms cover layer, and said cover layer seals said through hole.
Mems switch of the present invention is arranged at two groups of switch contacts respectively the top and the bottom of switch cavity; Through applying external electrical field; The driving device arm is crooked up and down; Thereby make the cutter of throwing on the mechanical arm contact, be communicated with corresponding input contact and output contact, thereby realize the control of single-pole double throw with one group of switch contact wherein.Have simple in structurely, be quick on the draw the characteristics that are easy to make.
Description of drawings
Through the more specifically explanation of the preferred embodiments of the present invention shown in the accompanying drawing, above-mentioned and other purposes, characteristic and advantage of the present invention will be more clear.The parts that each embodiment is identical in the accompanying drawing have used identical Reference numeral.Accompanying drawing and not drawn on scale focus on illustrating purport of the present invention.In the accompanying drawings for clarity sake, amplified the size of layer with the zone.
Fig. 1 is the generalized section of first embodiment of mems switch according to the invention;
Fig. 2 is along the schematic top plan view of A-A hatching line in the mems switch shown in Figure 1;
Fig. 3 is along the schematic top plan view of B-B hatching line in the mems switch shown in Figure 1;
Fig. 4 is along the schematic top plan view of C-C hatching line in the mems switch shown in Figure 1;
Fig. 5 is the generalized section of second embodiment of mems switch according to the invention;
Fig. 6 is along the schematic top plan view of A '-A ' hatching line in the mems switch shown in Figure 5;
Fig. 7 is along the schematic top plan view of B '-B ' hatching line in the mems switch shown in Figure 5;
Fig. 8 is along the schematic top plan view of C '-C ' hatching line in the mems switch shown in Figure 5;
Fig. 9 is the schematic flow sheet of the manufacture method of mems switch according to the invention;
Figure 10 to Figure 23 is the generalized section of each step of manufacture method of the mems switch of second embodiment of the invention; Figure 24 and Figure 25 are the mems switch work sketch map of second embodiment of the invention;
Figure 10 a to Figure 20 a is the schematic top plan view of each step of manufacture method of the mems switch of second embodiment of the invention;
Figure 13 b is along the generalized section of E-E hatching line among Figure 13 a;
Figure 17 b is along the generalized section of E-E hatching line among Figure 17 a;
Figure 19 b is along the generalized section of E-E hatching line among Figure 19 a;
Figure 21 b is along the generalized section of E-E hatching line among Figure 21 a.
Embodiment
The basic structure of mems switch of the present invention comprises:
Semiconductor substrate; Be positioned at the switch cavity on the Semiconductor substrate, said switch cavity comprise bottom dielectric layer and top medium layer;
Be positioned at the first input contact and first output contact of said bottom dielectric layer;
Be positioned at the second input contact and second output contact of said top medium layer;
Also comprise the mechanical arm that is positioned at said switch cavity, said mechanical arm comprises the stiff end that is fixed on the switch cavity and the free end of suspension, is formed with on the said free end and throws cutter;
When in the switch cavity, applying driving electric field; Said mechanical arm is activated electric field action and bending; Make and throw cutter contact bottom dielectric layer; The said first input contact is electrically connected with first output contact, perhaps contacts the top medium layer, the said second input contact and second output contact are electrically connected.
Above-mentioned mems switch is arranged at two groups of switch contacts respectively the top and the bottom of switch cavity; Through applying external electrical field; The driving device arm is crooked up and down; Thereby make the cutter of throwing on the mechanical arm contact, be communicated with corresponding input contact and output contact, thereby realize the control of single-pole double throw with one group of switch contact wherein.Have simple in structurely, be quick on the draw the characteristics that are easy to make.
Below in conjunction with concrete embodiment mems switch according to the invention is done detailed introduction.
First embodiment
Fig. 1 is the generalized section of first embodiment of mems switch according to the invention, and the structure of the mems switch of present embodiment comprises:
Fig. 2 be in the mems switch shown in Figure 1 along the schematic top plan view of A-A hatching line, show the structure of the bottom dielectric layer 100a of present embodiment.In conjunction with shown in Figure 2, be formed with first group of switch contact 101 on the said bottom dielectric layer 100a, comprise the first input contact 101a and the first output contact 101b; The said first input contact 101a and the first output contact 101b can be the salient point of square metal layer or metal and other conductive material, are connected respectively as the first group of input and the output of mems switch, and with external circuit.
Be formed with lower electrode plate 301a on the said bottom dielectric layer 100a, said lower electrode plate 301a is as a utmost point that produces said driving electric field.In the present embodiment; Said lower electrode plate 301a is positioned at a side of said first group of switch contact 101; Its shape can be square, polygon, circle etc.; Material can be metal or its alloy combination and polysilicon, germanium silicon or other semiconductor electric conducting materials commonly used such as copper, aluminium, titanium, tantalum, nickel, cobalt, so that compatible mutually with semiconductor fabrication process especially CMOS technology.
Also be formed with bonding pad 103 on the said bottom dielectric layer 100a, said bonding pad 103 is used for being connected with the stiff end 400a of said mechanical arm 400, thus the position of solid mechanical arm 400.In the present embodiment, said bonding pad 103 is positioned at the opposite side of said lower electrode plate 301a with respect to first group of switch contact 101, and said bonding pad 103, lower electrode plate 301a and first group of switch contact 101 are corresponding in vertical direction with mechanical arm 400.
Fig. 3 be in the mems switch shown in Figure 1 along the schematic top plan view of B-B hatching line, show the structure of the top medium layer 100b of present embodiment.In conjunction with shown in Figure 3, said top medium layer 100b is formed with second group of switch contact 102 with respect to the side surface of bottom dielectric layer 100a, comprises the second input contact 102a and the second output contact 102b; The said second input contact 102a and the second output contact 102b, second group of input and output as mems switch are connected with external circuit respectively.In addition, the said second input contact 102a and the second output contact 102b should aim at the first input contact 101a and the second output contact 101b of its below in vertical direction respectively.So that the mechanical arm 400 of mems switch when both direction up or down is crooked, be provided with on it throw cutter 401, can contact with corresponding contact exactly.Usually for simplified structure, the material of the said second input contact 102a and the second output contact 102b, shape, spacing can be identical with the first input contact 101a and the first output contact 101b.
Said top medium layer 100b also is formed with electric pole plate 301b on the opposite side surface with respect to bottom dielectric layer 100a, and said electric pole plate 301b is as another utmost point that produces said driving electric field.Equally, said electric pole plate 301b should aim at the lower electrode plate 301a of its below in vertical direction, and shape, area and material are identical with lower electrode plate 301a.When respectively to said electric pole plate 301b and lower electrode plate 301a energising, voltage difference between the two can make and form from top to bottom or driving electric field from bottom to top in the said switch cavity 100.
Fig. 4 be in the mems switch shown in Figure 1 along the schematic top plan view of C-C hatching line, show the structure of the mechanical arm 400 of present embodiment.In conjunction with shown in Figure 4; Said mechanical arm 400 comprises the stiff end 400a that is connected with the bonding pad 103 of bottom dielectric layer 100a and the free end 400b of suspension; Be formed with on the said free end 400b and throw cutter 401, said throw cutter 401 respectively be positioned at its top first group of switch contact 101 and be positioned at its below second group of switch contact 102 corresponding.Concrete, said mechanical arm 400 is a flexible structure, and its free end 400b aims at lower electrode plate 301a and the electric pole plate 301b on the top medium layer 100b on the bottom dielectric layer 100a in vertical direction.To said lower electrode plate 301a and electric pole plate 301b energising, when forming driving electric field, the free end 400b of said mechanical arm 400, especially mechanical arm 400 can be in the said driving electric field when respectively.
The mechanical arm 400 of said flexible structure comprises supporting construction 403 and is formed at the conductive electrode 402 on the said supporting construction 403; Said conductive electrode 402 is along the surface of supporting construction 403; Extend to free end 400b from stiff end 400a; Said conductive electrode 402 can be connected with external circuit through bonding pad 103, so that feed electric charge to said conductive electrode 402; But said conductive electrode 402 should with throw cutter 401 mutually insulateds.When in said conductive electrode 402, feeding positive charge or negative electrical charge, can be crooked up or down so that mechanical arm 400 receives the electric field force effect in said driving electric field.In addition, said supporting construction 403 can be the insulation material, and in the time of can avoiding mechanical arm 400 bendings, conductive electrode 402 contacts with lower electrode plate 301a and is short-circuited.
The said cutter 401 of throwing can be metal, polysilicon or other electric conducting materials, can be strip, column or blade-like; Since said throw cutter 401 respectively be positioned at its top first group of switch contact 101 and be positioned at its below second group of switch contact 102 corresponding; Therefore mechanical arm 400 is when bending up or down; Throwing cutter 401 can contact with one group of switch contact wherein; Be communicated with corresponding input contact and output contact, thereby realize the effect of single-pole double throw.
In the present embodiment, said mechanical arm 400 is " Z " font, and when mechanical arm 400 was fixed in the switch cavity 100, free end 400b and stiff end 400a had different height.Concrete; When stiff end 400a when bonding pad 103 on the bottom dielectric layer 100a is fixedly connected; Between said free end 400b and the stiff end 400a, also promptly and between the bottom dielectric layer 100a have difference in height, said difference in height makes said free end 400b be suspended in the switch cavity 100.As preferred embodiment, when mechanical arm 400 was not crooked, its free end 400b should be between top medium layer 100b and bottom dielectric layer 100a, and is positioned at the centre position.Said mechanical arm 400 receives the driving electric field effect and when crooked, the cutter 401 of throwing on its free end 400b moves up or down, and the stroke through identical just can contact with corresponding switch contact.
Second embodiment
In first embodiment, an end of said mechanical arm 400 is stiff end 400a, the free end 400b of the other end for suspending.Because mechanical arm 400 is a flexible structure, free end 400b can also laterally move except moving up or down, and therefore said free end 400b has the freedom of motion of four direction.In some application scenario of mems switch, owing to receive external impact or acceleration action, be easy to cause the free end 400b of mechanical arm 400 to produce horizontal dislocation, make that throwing cutter 401 can't aim at the switch contact that is positioned at above or below it.When said mems switch is worked, can not accurately contact if throw cutter 401 with switch contact, will make the input contact can not normally be communicated with, even produce short circuit between the feasible metal level that should insulate, and cause mems switch to lose efficacy with output contact.Therefore the present invention also provides the mems switch of second embodiment to address the above problem.
Fig. 5 is the generalized section of second embodiment of mems switch according to the invention, in conjunction with Fig. 5 and shown in Figure 1, compares with first embodiment; The difference of said second embodiment only is; Mechanical arm described in the mems switch is a bridge shape structure, and its two ends are stiff end, and the middle part is a free end.Be arranged so that more than the free end of mechanical arm only has the freedom of motion of both direction, can only move up or down.Below the concrete structure of present embodiment mems switch is done further to introduce, wherein identical with first embodiment modular construction has been used identical drawing reference numeral.
The structure of the mems switch of present embodiment comprises:
Fig. 6 be in the mems switch shown in Figure 5 along the schematic top plan view of A '-A ' hatching line, show the structure of the bottom dielectric layer 100a of present embodiment.In conjunction with shown in Figure 6, be formed with first group of switch contact 101 on the said bottom dielectric layer 100a, comprise the first input contact 101a and the first output contact 101b; The said first input contact 101a and the first output contact 101b can be the salient point of square sheet metal level, metal or other conductive material, are connected respectively as the first group of input and the output of mems switch, and with external circuit.
Be formed with two lower electrode plates on the said bottom dielectric layer 100a, comprise the first lower electrode plate 601a and the second lower electrode plate 602a.The said first lower electrode plate 601a and the second lower electrode plate 602a are arranged at the both sides of first group of switch contact 101 respectively, and about first group of switch contact 101 symmetry.Above-mentioned two lower electrode plates are as the same utmost point that produces said driving electric field.Further, can use metal interconnecting wires (scheming not shown) that the said first lower electrode plate 601a and the second lower electrode plate 602a are electrically connected.Similar with first embodiment; The shape of above-mentioned two lower electrode plates can be square, polygon, circle etc., and material can be metal or its alloy combination and polysilicon, germanium silicon or other semiconductor electric conducting materials commonly used such as copper, aluminium, titanium, tantalum, nickel, cobalt.As preferred scheme, shape, area and the material of the said first lower electrode plate 601a and the second lower electrode plate 602a should be identical, so that in switch cavity 100, form uniform driving electric field.
Said bottom dielectric layer 100a also is formed with two bonding pads; Comprise the first bonding pad 103a and the second bonding pad 103b; Above-mentioned two bonding pads are connected with the stiff end 501a and the stiff end 501b of said mechanical arm 500 respectively, thus the position of solid mechanical arm 500.In the present embodiment, the said first bonding pad 103a and the second bonding pad 103b are arranged at the both sides of first group of switch contact 101 respectively, and about first group of switch contact 101 symmetry.Further, the said first bonding pad 103a and the second bonding pad 103b lay respectively at the outside of the first lower electrode plate 601a and the second lower electrode plate 602a.The above-mentioned first bonding pad 103a, the first lower electrode plate 601a, first group of switch contact 101, the second lower electrode plate 602a and second bonding pad 103b are corresponding in vertical direction with mechanical arm 400.
Fig. 7 be in the mems switch shown in Figure 5 along the schematic top plan view of B '-B ' hatching line, show the structure of the top medium layer 100b of present embodiment.In conjunction with shown in Figure 7, be formed with second group of switch contact 102 on the side surface of said top medium layer 100b with respect to bottom dielectric layer 100a, comprise the second input contact 102a and the second output contact 102b; The said second input contact 102a and the second output contact 102b are connected with external circuit respectively as the second group of input and the output of mems switch.In addition, the said second input contact 102a and the second output contact 102b should aim at the first input contact 101a and the second output contact 101b of its below in vertical direction respectively.The material of said second group of switch contact 102, shape, spacing can be identical with first group of switch contact 101.
Said top medium layer 100b also is formed with two electric pole plates on the opposite side surface with respect to bottom dielectric layer, comprises the first electric pole plate 601b and the second electric pole plate 602b.The said first electric pole plate 601b and the second electric pole plate 602b are arranged at the both sides of second group of switch contact 102 respectively, and about second group of switch contact 102 symmetry.Above-mentioned two electric pole plates are as another utmost point that produces said driving electric field.Further, can use metal interconnecting wires (scheming not shown) that the said first electric pole plate 601b and the second electric pole plate 602b are electrically connected.The said first electric pole plate 601b and the second electric pole plate 602b should aim at the first lower electrode plate 601a and the second lower electrode plate 602a of its below in vertical direction respectively, and shape, area and material are identical.When respectively to two electric pole plates and two lower electrode plate energisings, can in said switch cavity 100, form from top to bottom or driving electric field from bottom to top.
Fig. 8 be in the mems switch shown in Figure 5 along the schematic top plan view of C '-C ' hatching line, show the structure of the mechanical arm 500 of present embodiment.In conjunction with shown in Figure 8, said mechanical arm 500 is a bridge shape structure, comprises the stiff end 501a and the stiff end 501b that are connected with bonding pad 103a and bonding pad 103b respectively, and the free end 502 at middle part, is formed with on the said free end 502 and throws cutter 503.Identical with first embodiment, saidly throw first group of switch contact 101 that cutter 503 puts with the position respectively on it and the second group of switch contact 102 that is positioned at its below is corresponding.Concrete, said mechanical arm 500 is a flexible structure, and its free end 502 is aimed at two lower electrode plates and two electric pole plates on the top medium layer 100b on the bottom dielectric layer 100a in vertical direction.When forming said driving electric field, the free end 502 of said mechanical arm 500 can be in the said driving electric field.
The mechanical arm 500 of said flexible structure comprises supporting construction 505 and is formed at the first conductive electrode 504a and the second conductive electrode 504b on the said supporting construction; The said first conductive electrode 504a extends to free end 502 from stiff end 501a along said supporting construction 505 surfaces, and can be connected with external circuit through bonding pad 103a; The said second conductive electrode 504b extends to free end 502 from stiff end 501b along said supporting construction 505 surfaces, and can be connected with external circuit through bonding pad 103b.The said first conductive electrode 504a and the second conductive electrode 504b should be all with throw cutter 503 mutually insulateds.When in the said first conductive electrode 504a and the second conductive electrode 504b, feeding positive charge or negative electrical charge, can be so that mechanical arm 500 receives the electric field force effect and bending in driving electric field.In order to make mechanical arm 500 suffered electric field force uniformities, should in the first conductive electrode 504a and the second conductive electrode 504b, feed with kind and with the electric charge of quantity.As preferred scheme, externally in the circuit the first conductive electrode 504a is electrically connected with the second conductive electrode 504b.Identical with first embodiment, said supporting construction 505 can be the insulation material, and in the time of can avoiding mechanical arm 500 bendings, the said first conductive electrode 504a and the second conductive electrode 504b contact with two lower electrode plates and be short-circuited.
Said throw cutter 503 respectively be positioned at its top first group of switch contact 101 and be positioned at its below second group of switch contact 102 corresponding; Make mechanical arm 500 when bending up or down; Throwing cutter 503 can contact with one group of switch contact wherein; Be communicated with corresponding input contact and output contact, thereby realize the effect of single-pole double throw.
In the present embodiment, said mechanical arm 500 is " Ω " shape, when making mechanical arm 500 in being fixed in switch cavity 100, the free end at middle part 502 and the stiff end 501a of both sides and fixedly 501b have different height.Concrete, when stiff end 501a is fixedly connected with bonding pad 103a, when stiff end 501b is connected with bonding pad 103b, there is difference in height between said free end 502 and the bottom dielectric layer 100a, said difference in height makes free end 502 be suspended in the switch cavity 100.As preferred embodiment, when mechanical arm 500 was not crooked, its free end 502 should be between top medium layer 100b and bottom dielectric layer 100a, and is positioned at the centre position.Said mechanical arm 500 is driven by driving electric field and when crooked, the cutter 503 of throwing on its free end 502 moves up or down, and the stroke through identical just can contact with corresponding switch contact.
The present invention also provides the manufacture method of above-mentioned mems switch.Fig. 9 is the schematic flow sheet of said manufacture method, and basic step comprises:
Execution in step S101, Semiconductor substrate is provided, on said Semiconductor substrate, forms bottom dielectric layer; Form first group of switch contact, lower electrode plate and bonding pad on the surface of said bottom dielectric layer.
Wherein, said bottom dielectric layer should be the insulation material.Said first group of switch contact, lower electrode plate and bonding pad all can be metal, can form the first metal layer at the bottom dielectric laminar surface earlier, and the said the first metal layer of etching forms above-mentioned first group of switch contact, lower electrode plate and bonding pad then.The concrete shape and the relative position relation of said first group of switch contact, lower electrode plate and bonding pad, the existing detailed description in detail repeated no more here in aforementioned structure embodiment.
Execution in step S102, form patterned sacrificial dielectric layer down on the surface of above-mentioned semiconductor structure, said sacrificial dielectric layer down exposes bonding pad and part bottom dielectric layer.
Wherein, said sacrificial dielectric layer down is used to form the free-ended side space down that mechanical arm suspends, and its thickness has determined the spacing of said free end and bottom dielectric layer.Said sacrificial dielectric laminar surface down also is formed with first groove, and first group of switch contact of said first groove alignment is used to make the cutter of throwing on the mechanical arm free end.
Execution in step S103, on the part surface of said down sacrificial dielectric layer, form mechanical arm.
Concrete, on the part surface of said sacrificial dielectric layer down and bonding pad, forming the supporting medium layer that insulate earlier, said supporting medium layer is identical with the shape of preformed mechanical arm, and exposes said first groove; In said supporting medium layer, surface, part bonding pad and first groove, form the second continuous metal level then, said second metal level of etching forms the conductive electrode of mechanical arm and throws cutter.Above-mentioned supporting medium layer, conductive electrode and throw cutter and just formed mechanical arm according to the invention.Wherein, supporting medium layer plays skeleton that constitutes mechanical arm and the effect of supporting conductive electrode and throwing cutter on the one hand, and in the time of can also avoiding the mechanical arm downwarping on the other hand, conductive electrode contacts with lower electrode plate on the bottom dielectric layer.
Execution in step S104, above-mentioned semiconductor structure surface form patterned on sacrificial dielectric layer, the said sacrificial dielectric layer that goes up is connected with following sacrificial dielectric layer.
Wherein, the said sacrificial dielectric layer that goes up is used to form the free-ended superjacent air space that mechanical arm suspends, and its thickness has determined the spacing of said free end and top medium layer.
Execution in step S105, the sacrificial dielectric laminar surface forms the top medium layer on said;
Wherein, also be formed with second groove on the said top medium layer, said second groove runs through the top medium layer, and its bottom surface is lower than the lower surface of top medium layer.The said second groove alignment mechanical arm throw cutter, be used to make second group of switch contact.
Execution in step S106, form second group of switch contact, electric pole plate at said top medium laminar surface.
Can form the 3rd metal level at the top medium laminar surface earlier, said the 3rd metal level of etching forms above-mentioned second group of switch contact and electric pole plate then.Wherein the 3rd metal level is filled in the interior part of second groove as second group of switch contact, because second groove runs through said top medium layer, therefore said second group of switch contact in fact also runs through said top medium layer.
Execution in step S107, the said top medium layer of etching form some through holes that expose sacrificial dielectric layer, through said through hole, and sacrificial dielectric layer and following sacrificial dielectric layer in the removal.
Owing to the said sacrificial dielectric layer that goes up is connected with following sacrificial dielectric layer,, just can remove said sacrificial dielectric layer and the following sacrificial dielectric layer of going up simultaneously therefore only through the through hole on the top medium layer.
Just can form mems switch of the present invention through above-mentioned steps.
Mems switch structure with second embodiment is an example below, and the manufacture method of mems switch according to the invention is done further to introduce.Figure 10 to Figure 20 is the generalized section of each step of manufacture method of the mems switch of second embodiment of the invention.Figure 10 a to Figure 20 a is the schematic top plan view of above-mentioned each step of manufacture method.Wherein Figure 10 be among Figure 10 a along the generalized section of D-D hatching line, subsequent drawings is corresponding one by one, repeats no more.
Shown in Figure 10 and Figure 10 a; Semiconductor substrate 10 at first is provided; Said Semiconductor substrate 10 can be silicon substrate or silicon-on-insulator; Can be formed with metal interconnected or other semiconductor device (not shown)s, so that mems switch of the present invention adopts the semiconductor chip of CMOS technology mutually integrated with other.Surface in said Semiconductor substrate 10 forms bottom dielectric layer 100a and the first metal layer 701.Said bottom dielectric layer 100a is a dielectric, and in the present embodiment, said bottom dielectric layer 100a is a silicon dioxide, adopts chemical vapor deposition method to form.Said the first metal layer 701 can be metal or its alloy combination such as copper, aluminium, titanium, tantalum, nickel, cobalt, adopts physical gas-phase deposition to form.
Shown in Figure 11 and Figure 11 a, the said the first metal layer 701 of etching forms the first bonding pad 103a, the first lower electrode plate 601a, first group of switch contact 101, the second lower electrode plate 602a and second bonding pad 103b.
Wherein, Said first group of switch contact 101 comprises the first input contact 101a and the second input contact 101b; The said first input contact 101a and the second input contact 101b are metal salient point; Both arrange along the surface longitudinal of bottom dielectric layer 100a, and spacing is
The said first bonding pad 103a, the first lower electrode plate 601a, first group of switch contact 101, the second lower electrode plate 602a and second bonding pad 103b are corresponding in vertical direction with preformed mechanical arm.The said first bonding pad 103a and the second bonding pad 103b, the first lower electrode plate 601a and the second lower electrode plate 602a all are symmetrical set about first group of switch contact 101, and are the square metal layer.
During the said the first metal layer 701 of this external etching, also comprise the metal interconnecting wires that formation simultaneously is connected with above-mentioned each metal level, be used for above-mentioned metal level is connected with external circuit.
As optional scheme, behind the intact the first metal layer 701 of etching, can also improve the apparent height of bottom dielectric layer 100a at above-mentioned semiconductor structure surface backfill dielectric.Concrete, can adopt the chemical vapor deposition method deposition of silica, cover above-mentioned semiconductor structure surface, carry out cmp then, make that the surface of said bottom dielectric layer 100a is concordant with above-mentioned each metal level top.
Shown in Figure 12 and Figure 12 a, form the first sacrifice layer 801a on semiconductor structure surface shown in Figure 11, the said first sacrifice layer 801a of etching forms detent 900, and said detent 900 exposes first group of switch contact 101.The said first sacrifice layer 801a is an amorphous carbon, adopts chemical vapour deposition (CVD) to form.
Shown in Figure 13 and Figure 13 a, form the second sacrifice layer 801b on first sacrifice layer 801a surface, the said second sacrifice layer 801b is an amorphous carbon, adopts chemical vapour deposition (CVD) to form, thickness equates with the first sacrifice layer 801a.
Because the first sacrifice layer 801a has formed step structure in the edge of detent 900; Therefore when depositing the second sacrifice layer 801b identical with the first sacrifice layer 801a thickness; The said second sacrifice layer 801b has not only filled up detent 900; Also groove 900 places have formed new groove in former location, the first promptly required groove 901.Said first groove 901 can accurately be aimed at first group of switch contact 101 of its below, and its degree of depth then is similar to the thickness of the second sacrifice layer 801b, and width is slightly less than former location groove 900.
Figure 13 b be among Figure 13 a along the generalized section of E-E hatching line, visible from Figure 13 b, because first group of switch contact 101 comprises the first input contact 101a and the first output contact 101b, therefore said first groove 901 also comprises corresponding two grooves.
Shown in Figure 14 and Figure 14 a, the graphical said first sacrifice layer 801a and the second sacrifice layer 801b form down sacrificial dielectric layer 801, expose the first bonding pad 103a, the second bonding pad 103b and the bottom dielectric layer 100a on every side of its both sides.
Above-mentioned sacrificial dielectric layer 801 manufacture methods down, its advantage is that the degree of depth of said first groove 901 can accurately be controlled through the deposit thickness of adjusting the second sacrifice layer 801b.And if adopt direct deposited sacrificial medium to form down sacrificial dielectric layer; The said sacrificial dielectric layer down of etching forms the method for first groove again; Owing to lack etching stop layer; Need time, therefore be difficult to accurately control the degree of depth of said first groove, and be easy to generate over etching through the said etching of adjustment.
Shown in Figure 15 and Figure 15 a, descending sacrificial dielectric layer 801 and the first bonding pad 103a of both sides thereof, the part surface of the second bonding pad 103b, adopt selective deposition to form supporting medium layer 505.Said supporting medium layer 505 is bridge shape structure, and two ends are connected with the first bonding pad 103a and the second bonding pad 103b respectively, and the middle part is overlying on down the surface of sacrificial dielectric layer 801, and exposes said first groove 901.The material of said supporting medium layer 505 is insulating material such as silica, silicon nitride, silicon oxynitride; Its thickness is blocked up will to cause the excessive and crooked difficulty of mechanical arm rigidity; Cross the thin stability that then influences mechanical arm, therefore need select according to the practical devices size of mems switch.
Shown in Figure 16 and Figure 16 a,, form second metal level 702 at the first bonding pad 103a of said supporting medium layer 505 and both sides thereof, the part surface of the second bonding pad 103b.
Said second metal level, 702 materials can be identical with the first metal layer 701, adopts physical vapour deposition (PVD) to form.
Shown in Figure 17 and Figure 17 a, said second metal level 702 of etching forms the first conductive electrode 504a, the second conductive electrode 504b and throws cutter 503.
The wherein said cutter 503 of throwing comprises that second metal level 702 is filled in the part of first groove 901, the said first conductive electrode 504a, the second conductive electrode 504b and throw cutter 503 and insulate mutually, and be symmetrical set about throwing cutter 503.Concrete, the said first conductive electrode 504a is connected with the first bonding pad 103a, and extends to throwing cutter 503 along the surface of supporting medium layer 505, and corresponding with the first lower electrode plate 601a that is positioned at its below; The said second conductive electrode 504b is connected with the second bonding pad 103b, and extends to 503 along the surface of supporting medium layer 505, and corresponding with the second lower electrode plate 602a that is positioned at its below.
The above-mentioned first conductive electrode 504a, the second conductive electrode 504b, throw the mechanical arm that cutter 503 and supporting medium layer 505 constitutes the said bridge shape of present embodiments structure.
Figure 17 b be among Figure 17 a along the generalized section of E-E hatching line, visible from Figure 17 b, the said cutter 503 of throwing comprises the metal that is filled in said first groove 901, has formed two metal salient points.
Shown in Figure 18 and Figure 18 a, at semiconductor structure surface coverage deposited sacrificial medium shown in Figure 17, and graphical said sacrificial dielectric forms sacrificial dielectric layer 802.Because mechanical arm is open bridge shape structure, sealing is not positioned at the following sacrificial dielectric layer 801 of its below, and the last sacrificial dielectric layer 802 that therefore is positioned at its top can be connected with said sacrificial dielectric layer 801 down.Preferably, said material that goes up sacrificial dielectric layer 802 and thickness are identical with following sacrificial dielectric layer 801.
Shown in Figure 19 and Figure 19 a; The surface of sacrificial dielectric layer 802 forms top medium layer 100b on said; The said top medium layer of etching 100b forms second groove 902 that sacrificial dielectric layer 802 is exposed in the bottom, and what said second groove 902 was aimed at the below mechanical arms throws cutter 503.Preferably, when forming second groove 902, can carry out the over etching of certain depth, make the bottom surface of said second groove 902 be lower than the lower surface of top medium layer 100b.
Figure 19 b is along the generalized section of E-E hatching line among Figure 19 a; Visible from Figure 19 b; Said second groove 902 is used to make second group of switch contact; Therefore comprise two grooves, the corresponding second input contact of difference and second output contact, and the spacing of above-mentioned two grooves is consistent with the spacing of the first input contact 101a, the first output contact 101b.
Shown in Figure 20 and Figure 20 a, form the 3rd metal level 703 on the surface of said top medium layer 100b.Said the 3rd metal level 703 materials can be identical with the first metal layer 701, adopts physical vapour deposition (PVD) to form.
Shown in Figure 21 and Figure 21 a, said the 3rd metal level 703 of etching forms the first electric pole plate 601b, the second electric pole plate 602b and second group of switch contact 102.
The said first electric pole plate 601b and the second electric pole plate 602b aim at the first lower electrode plate 601a and the second lower electrode plate 602a of below respectively, and shape, area size are identical.Said second group of switch contact 102 is the part that former the 3rd metal level 703 is filled in second groove 902.
Figure 21 b be among Figure 21 a along the generalized section of E-E hatching line, visible from Figure 21 b, said second group of switch contact 102 comprises the second isolated input contact 102a and the second output contact 102b.Because second groove 902 runs through top medium layer 100b, therefore the said second input contact 102a and the second output contact 102b also run through said top medium layer 100b.
When said the 3rd metal level 703 of etching, also comprise the metal interconnecting wires that formation simultaneously is connected with above-mentioned each metal level equally, be used for above-mentioned metal level is connected with external circuit.
Shown in Figure 22 and Figure 22 a, the said top medium layer of etching 100b forms some through holes 904 that expose sacrificial dielectric layer 802, removes through said through hole 904 and goes up sacrificial dielectric layer 802 and following sacrificial dielectric layer 801.
Said go up sacrificial dielectric layer 802 and down sacrificial dielectric layer 801 be amorphous carbon, can be in said through hole 904 aerating oxygen, and carry out cineration technics, remove said amorphous carbon.Concrete, the heating-up temperature of said cineration technics is 100 ℃～350 ℃, under this temperature; Said amorphous carbon is oxidized to carbon dioxide or CO gas; And, remove comparatively up hill and dale, and the remainder of device can not be affected through through hole 904 discharges.
Just form the mems switch of second embodiment of the invention through above-mentioned steps.Said down sacrificial dielectric layer 801 and go up sacrificial dielectric layer 802 and remove after, said mechanical arm except the stiff end that is connected in the first bonding pad 103a and the second bonding pad 103b, the free end of center and throw cutter 503 and be in suspended state.
Shown in figure 23, in order to guarantee the closure of mems switch, can also form cover layer 104 on the surface of said mems switch shown in Figure 22, thereby constitute the switch cavity of sealing usually.The material of said cover layer 104 is a silica, adopts chemical vapour deposition (CVD) to form.Said cover layer 104 can more easily seal the through hole on the top medium layer 100b 904, and can not infiltrate in the mems switch.
From Fig. 1 and Fig. 5, be not difficult to find out; The structural similarity of the mems switch of the mems switch of said first embodiment and second embodiment; Difference only is mechanical arm, and the mechanical arm that in fact mechanical arm of said second embodiment can be equivalent to two first embodiment is symmetrical set.According to the manufacture method of the above-mentioned second embodiment mems switch that provides, be easy to push away the manufacture method of embodiment mems switch of winning, repeat no more here.
Figure 24 and Figure 25 show the generalized section of mems switch under the different operating state of above method made respectively.
Shown in figure 24; Suppose that the mechanical arm downwarping is until contact bottom dielectric layer 100a; Make the said cutter 503 of throwing contact with the first input contact 101a and the first output contact 101b simultaneously; Be conducting metal owing to throw cutter 503, above-mentioned contact is communicated with the first input contact 101a with the first output contact 101b.
Shown in figure 25; Suppose that mechanical arm is bent upwards until contact top medium layer 100b; Make the said cutter 503 of throwing contact with the second input contact 102a and the second output contact 102b simultaneously, thereby the second input contact 102a is communicated with the second output contact 102b.
Though the present invention with preferred embodiment openly as above; But it is not to be used for limiting the present invention; Any those skilled in the art are not breaking away from the spirit and scope of the present invention; Can utilize the method and the technology contents of above-mentioned announcement that technical scheme of the present invention is made possible change and modification, therefore, every content that does not break away from technical scheme of the present invention; To any simple modification, equivalent variations and modification that above embodiment did, all belong to the protection range of technical scheme of the present invention according to technical spirit of the present invention.
Claims (20)
1. a mems switch is characterized in that, comprising:
Semiconductor substrate; Be positioned at the switch cavity on the Semiconductor substrate, said switch cavity comprises bottom dielectric layer and top medium layer;
Be positioned at first group of switch contact of said bottom dielectric layer, comprise the first input contact and first output contact;
Be positioned at second group of switch contact of said top medium layer, comprise the second input contact and second output contact;
Also comprise mechanical arm, said mechanical arm comprises the stiff end that is fixed on the switch cavity bottom dielectric layer and the free end of suspension, is formed with on the said free end and throws cutter; It is said that to throw cutter corresponding with the position of said first group of switch contact and second group of switch contact;
When in the switch cavity, applying driving electric field; Said mechanical arm is activated electric field action and bending; Make that throwing cutter contact bottom dielectric layer is electrically connected the said first input contact with first output contact, perhaps contact the top medium layer the said second input contact and second output contact are electrically connected.
2. mems switch as claimed in claim 1 is characterized in that, said mechanical arm is the zigzag structure, and the one of which end is a stiff end, and the other end is a free end, and said stiff end and free end have difference in height.
3. mems switch as claimed in claim 2 is characterized in that, is formed with the bonding pad on the said bottom dielectric layer, and said bonding pad is connected with the stiff end of mechanical arm.
4. mems switch as claimed in claim 2; It is characterized in that; Also comprise electric pole plate that is formed at said top medium layer and the lower electrode plate that is formed at said bottom dielectric layer, the free end of said mechanical arm is aimed at said lower electrode plate and electric pole plate in vertical direction.
5. mems switch as claimed in claim 4 is characterized in that said lower electrode plate is arranged at the surface of said bottom dielectric layer, and said electric pole plate is arranged at the opposite side surface of said top medium layer with respect to bottom dielectric layer.
6. mems switch as claimed in claim 4 is characterized in that said mechanical arm comprises supporting construction and conductive electrode, and said conductive electrode extends to free end from stiff end along the supporting construction surface, and insulate with the said cutter of throwing.
7. mems switch as claimed in claim 1 is characterized in that, said mechanical arm is a bridge shape structure, and its two ends are stiff end, and the middle part is a free end.
8. mems switch as claimed in claim 7; It is characterized in that; Be formed with first bonding pad and second bonding pad on the said bottom dielectric layer, said first bonding pad and second bonding pad are symmetrical about said first group of switch contact, and are connected with two stiff ends of mechanical arm respectively.
9. mems switch as claimed in claim 7; It is characterized in that; Also comprise being formed on the said top medium layer and, be formed on the bottom dielectric layer and about first lower electrode plate and second lower electrode plate of first group of switch contact symmetry about first electric pole plate and second electric pole plate of second group of switch contact symmetry; The free end of said mechanical arm is aimed at said above-mentioned lower electrode plate and electric pole plate in vertical direction.
10. mems switch as claimed in claim 9; It is characterized in that; Said first lower electrode plate and second lower electrode plate are formed at the surface of said bottom dielectric layer, and said first electric pole plate and second electric pole plate are formed at the opposite side surface of said top medium layer with respect to bottom dielectric layer.
11. mems switch as claimed in claim 9; It is characterized in that; Said mechanical arm comprises supporting construction and first conductive electrode, second conductive electrode; Said first conductive electrode and second conductive electrode are along the surface of said supporting construction, and two stiff ends from mechanical arm extend to the middle part free end respectively, and all insulate with the said cutter of throwing.
12. the manufacture method of a mems switch is characterized in that, comprising:
Semiconductor substrate is provided, on said Semiconductor substrate, forms bottom dielectric layer; Form first group of switch contact, lower electrode plate and bonding pad on the surface of said bottom dielectric layer;
Form patterned sacrificial dielectric layer down on the surface of above-mentioned semiconductor structure, said sacrificial dielectric layer down exposes bonding pad and part bottom dielectric layer;
On the part surface of said sacrificial dielectric layer down, form the mechanical arm that is connected with said bonding pad;
Sacrificial dielectric layer on the surface formation of above-mentioned semiconductor structure is patterned, the said sacrificial dielectric layer that goes up is connected with following sacrificial dielectric layer;
The sacrificial dielectric laminar surface forms the top medium layer on said;
Form second group of switch contact, electric pole plate at said top medium laminar surface; Said second group of switch contact is corresponding with the position of first group of switch contact, and said electric pole plate is corresponding with the position of lower electrode plate;
The said top medium layer of etching forms some through holes that expose sacrificial dielectric layer, through said through hole, and sacrificial dielectric layer and following sacrificial dielectric layer in the removal.
13. manufacture method as claimed in claim 12 is characterized in that, saidly forms first group of switch contact, lower electrode plate and bonding pad at the bottom dielectric laminar surface and comprises:
Form the first metal layer at the bottom dielectric laminar surface;
The said the first metal layer of etching forms first group of switch contact, lower electrode plate and bonding pad;
At above-mentioned semiconductor structure surface backfill dielectric, improve the apparent height of bottom dielectric layer;
Carry out cmp, make that the surface of bottom dielectric layer is concordant with the top of said first group of switch contact, lower electrode plate and bonding pad.
14. manufacture method as claimed in claim 13; It is characterized in that; Said bonding pad is positioned at the opposite side of lower electrode plate with respect to first group of switch contact, and said bonding pad, lower electrode plate and first group of switch contact are corresponding with the position of the mechanical arm of follow-up formation.
15. manufacture method as claimed in claim 13 is characterized in that, sacrificial dielectric layer comprises under the said formation:
Form first sacrifice layer at the bottom dielectric laminar surface;
Said first sacrifice layer of etching forms detent, and said detent exposes first group of switch contact;
Form second sacrifice layer in first sacrificial layer surface, said second sacrificial layer thickness equates with first sacrifice layer, makes said second sacrifice layer fill and lead up said detent, and forms first groove at said detent place;
Said second sacrifice layer of etching and first sacrifice layer expose the bonding pad of bottom dielectric laminar surface, form sacrificial dielectric layer down.
16. manufacture method as claimed in claim 15 is characterized in that, said formation mechanical arm comprises:
Part surface in following sacrificial dielectric layer and bonding pad utilizes mask to carry out selective deposition and forms supporting medium layer, and said supporting medium layer defines the shape of said mechanical arm;
In said bonding pad and the Supporting Media laminar surface form second metal level;
Said second metal level of etching forms conductive electrode and throws cutter, and the said cutter of throwing comprises second metal level that is filled in said first groove, and said conductive electrode is connected with the bonding pad, and extends to the said cutter of throwing from the bonding pad along the Supporting Media laminar surface.
17. manufacture method as claimed in claim 16 is characterized in that, forms second group of switch contact, electric pole plate at said top medium laminar surface and comprises:
The said top medium layer of etching forms second groove, said second groove alignment below throw cutter, and run through the top medium layer;
Form the 3rd metal level at said top medium laminar surface;
Said the 3rd metal level of etching forms second group of switch contact and electric pole plate; Said electric pole plate is aimed at the lower electrode plate of below, and said second group of switch contact aimed at the cutter of throwing of below, and said second group of switch contact comprises the 3rd metal level that is filled in second groove.
18. manufacture method as claimed in claim 12 is characterized in that, the material of said sacrificial dielectric layer down and last sacrificial dielectric layer is amorphous carbon, and thickness is identical.
19. manufacture method as claimed in claim 18; It is characterized in that; Sacrificial dielectric layer and following sacrificial dielectric layer comprise in the said removal: aerating oxygen in said through hole; Adopt cineration technics to remove said sacrificial dielectric layer and the following sacrificial dielectric layer of going up, the heating-up temperature of said cineration technics is 100 ℃～350 ℃.
20. manufacture method as claimed in claim 12 is characterized in that, also is included in said top medium laminar surface and forms cover layer, said cover layer seals said through hole.
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| CN201010608168.2A CN102543591B (en) | 2010-12-27 | 2010-12-27 | MEMS (micro-electro-mechanical systems) switch and manufacturing method thereof |
| PCT/CN2011/074291 WO2012088822A1 (en) | 2010-12-27 | 2011-05-19 | Mems switch and manufacturing method thereof |
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| CN201010608168.2A CN102543591B (en) | 2010-12-27 | 2010-12-27 | MEMS (micro-electro-mechanical systems) switch and manufacturing method thereof |
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| WO (1) | WO2012088822A1 (en) |
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| WO2016086690A1 (en) * | 2014-12-02 | 2016-06-09 | 无锡华润上华半导体有限公司 | Method for manufacturing mems double-layer suspension microstructure, and mems infrared detector |
| WO2017198943A1 (en) * | 2016-05-20 | 2017-11-23 | Université De Limoges | Variable radio frequency micro-electromechanical switch |
| CN107892268A (en) * | 2017-11-13 | 2018-04-10 | 苏州敏芯微电子技术股份有限公司 | Pressure sensor and its manufacture method |
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| CN1716492A (en) * | 2005-06-07 | 2006-01-04 | 北京邮电大学 | Integrated RF MEMS switch |
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| CN104201059A (en) * | 2014-09-03 | 2014-12-10 | 太原理工大学 | Radio-frequency MEMS switch based on electrostatic repulsion and attraction hybrid driving |
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Also Published As
| Publication number | Publication date |
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| CN102543591B (en) | 2014-03-19 |
| WO2012088822A1 (en) | 2012-07-05 |
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