CN102520221A - Manufacturing method of electroluminescence test electrode - Google Patents
Manufacturing method of electroluminescence test electrode Download PDFInfo
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- CN102520221A CN102520221A CN2011104319506A CN201110431950A CN102520221A CN 102520221 A CN102520221 A CN 102520221A CN 2011104319506 A CN2011104319506 A CN 2011104319506A CN 201110431950 A CN201110431950 A CN 201110431950A CN 102520221 A CN102520221 A CN 102520221A
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- indium
- test electrode
- indium grain
- electroluminescence
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Abstract
The invention discloses a manufacturing method of an electroluminescence test electrode. The method comprises the following steps: selecting indium granular with a same size; using a fixed pressure to carry out constant force pressing indium granular on an epitaxial wafer; repeatedly carrying out heating, cooling, the constant force pressing to the indium granular so that a resistance between the indium granular and the epitaxial wafer can reach stability. The invention has the following advantages that: the manufacturing method is simple; usage is convenient; through repeatedly carrying out the heating, the cooling, the constant force pressing to the indium granular, repeatability of the test can be substantially increased and a repeatability standard deviation can be controlled in 0-4% so that a reliable and stable photoelectric test result can be obtained.
Description
Technical field
The present invention relates to a kind of method for making of electrode, specifically a kind of method for making of electroluminescence test electrode belongs to LED test electrode field.
Background technology
After the epitaxial wafer growth finishes, need measure its photoelectric parameter fast and accurately, adjust each parameter of epitaxial growth program then according to measurement result, to reach the purpose of continuing to optimize epitaxial structure with the electroluminescence tester.
Present electrode production program may further comprise the steps: 1. select uniform indium grain; 2. on epitaxial wafer, push the indium grain; 3. heating reduces the contact resistance of indium grain and epitaxial wafer; 4. the electroluminescence tester is tested.
The shortcoming of prior art: before each use electroluminescence tester is measured; All to carry out P (just) electrode and N (bearing) electrode earlier, measure the indium grain that needs to remove on the epitaxial wafer after finishing for the first time and make electrode again, and then carry out the test second time; Yet; There is bigger difference in the result who records for the second time with the first time, and the poor repeatability of test mainly is the test poor repeatability of luminous power.
Summary of the invention
In order to address the above problem; The present invention has designed a kind of method for making of electroluminescence test electrode; This method can make the electroluminescence tester more accurate to the measurement of epitaxial wafer photoelectric parameter through the indium grain being repeated heating, cooling, decide power and pushing repeatedly, and the repeatability of test better.
Technical scheme of the present invention is:
A kind of method for making of electroluminescence test electrode may further comprise the steps:
(1) selects uniform indium grain; The absolute size of indium grain do not had polarize, but it is identical as far as possible to select the diameter of indium grain, the standard of tolerance of diameter is less than 5%;
(2) on epitaxial wafer, use fixation pressure to carry out deciding power and push the indium grain; The size of pressure do not had polarize, but the size of pressure will keep stable when test, the tolerance of pressure is less than 1%; The concrete shape of press device is not limit, and having certain weight can get final product the indium grain enforcement effect of pushing;
(3) the indium grain being heated, cool off, decides power successively pushes; Repetitive cycling repeatedly makes the resistance between indium grain and the epitaxial wafer reach stable, promptly logical identical electric current; The variation of changes in resistance and voltage is synchronous, and repeatedly the tolerance of test voltage or resistance is less than 5%; This step can make the resistance stabilization degree between indium grain and the epitaxial wafer greatly improve, and efficiently solves the problem of test poor repeatability;
(4) last, the electroluminescence tester is tested.
Wherein, step (2) is carried out deciding power and is pushed, and promptly uses the dynamics of press device when guaranteeing fixedly to push the indium grain identical; Push the material roughness Ra >=5um of indium grain, with guarantee to push back indium grain contacts with epitaxial wafer and and push material separation; The back side that is preferably Sapphire Substrate is the facet of alundum (Al substrate;
The heating-up temperature of said step (3) is 350-400 ℃, wherein is preferably 380 ℃; 1-3 minute heat time heating time, wherein be preferably 2 minutes; Be 0.5-2 minute cool time, wherein is preferably 1 minute; Compressing time is 2-8 second, wherein is preferably for 5 seconds.
Heating, the cooling of said step (3), decide power and push, cycle criterion is 2-10 time, wherein is preferably 3 times.
Discover; Only change accuracy and repeatability that heating-up temperature, heat time heating time, cool time and press pressure all can not improve test; Through adopt the indium electrode repeat heat, cool off, decide the electrode production method that power is pushed, improved and tested accuracy and repeatability.
The reason that test accuracy and repeatability improve is: it is nearer to push the contact that can make between indium grain and the epitaxial wafer, but the Ohmic contact that can not form; Heating can make and form good Ohmic contact between indium grain and the epitaxial wafer; But caused the increase of hole between indium grain and the epitaxial wafer simultaneously; So take repeating heating, cooling, deciding power and push of indium electrode; What so both guaranteed to contact between indium grain and the epitaxial wafer is nearer, and contact area is bigger, and the Ohmic contact between simultaneously also reaches good state.
Adopt existing electrode production program and electrode production program of the present invention to make the electrode of epitaxial wafer respectively, carried out luminous power test for several times with the electroluminescence tester then.The result shows: the repeated standard deviation that the existing method for making its electrode of employing carries out the test of electroluminescence tester is more than 10%, and the repeated standard deviation that adopts method for making its electrode of the present invention to carry out the test of electroluminescence tester can be controlled in 4%.
The invention has the advantages that: method for making is simple; Easy to use, through the indium grain being repeated heating, cooling, decide power and push repeatedly, thereby the repeatability of testing improves greatly; The repeated standard deviation of test has obtained the photoelectricity test result of reliable and stable more in 4%.
Embodiment
Below the preferred embodiments of the present invention are described, should be appreciated that preferred embodiment described herein only is used for explanation and explains the present invention, and be not used in qualification the present invention.
Embodiment 1
A kind of method for making of electroluminescence test electrode may further comprise the steps:
(1) select a collection of indium grain that diameter is 0.65mm, diameter tolerance is in 5%;
(2) on epitaxial wafer, use fixation pressure that above-mentioned indium grain is carried out deciding power and push, the tolerance of pressure is less than 1%; The material of pushing the indium grain is the facet of alundum (Al substrate, roughness Ra >=5um;
(3) then the indium grain is carried out 380 ℃ of heating 2 minutes successively, cooled off 1 minute, pushed for 5 seconds, circulate 3 times, make the resistance between indium grain and the epitaxial wafer reach stable, the tolerance of voltage and resistance is all less than 5%;
(4) on the electroluminescence tester, test at last.
The luminous power result of test sees the following form.
Table 1 adopts method for making its electrode of the present invention to carry out the result of electroluminescence tester test
Adopt existing electrode production method, carry out three repeated tests, the epitaxial wafer luminous power result who records sees table 2.
Table 2 adopts existing method for making its electrode to carry out the result of electroluminescence tester test
Analyze: from last table, can find out, adopt electrode production method of the present invention after, the repeated standard deviation of test is by reducing to 4% more than 10%, the photoelectricity test result who obtains is reliable and stable more.
Embodiment 2
A kind of method for making of electroluminescence test electrode may further comprise the steps:
(1) select a collection of indium grain that diameter is 0.30mm, diameter tolerance is in 5%;
(2) on epitaxial wafer, use fixation pressure that above-mentioned indium grain is carried out deciding power and push, the tolerance of pressure is less than 1%; The material of pushing the indium grain is the facet of alundum (Al substrate, roughness Ra >=5um;
(3) to the indium grain successively 400 ℃ the heating 1 minute, cooled off 0.5 minute, pushed for 2 seconds, circulate 2 times, make the resistance between indium grain and the epitaxial wafer reach stable, the tolerance of voltage and resistance is all less than 5%;
(4) on the electroluminescence tester, test at last.
The luminous power result who records sees table 3.
Table 3 adopts method for making its electrode of the present invention to carry out the result of electroluminescence tester test
Analyze: can find out that from last table behind the electrode production method of employing this programme, the repeated standard deviation of test is 3%, the photoelectricity test result who obtains is reliable and stable more.
Embodiment 3
A kind of method for making of electroluminescence test electrode may further comprise the steps:
(1) select a collection of indium grain that diameter is 0.65mm, diameter tolerance is in 5%;
(2) on epitaxial wafer, use fixation pressure to carry out deciding power and push the indium grain, the tolerance of pressure is less than 1%; The material of pushing the indium grain is the facet of alundum (Al substrate, roughness Ra >=5um;
(3) to the indium grain successively 350 ℃ the heating 3 minutes, cooled off 2 minutes, each electrode pushed for 8 seconds, circulated 2 times, made the resistance between indium grain and the epitaxial wafer reach stable, the tolerance of voltage and resistance is all less than 5%;
(4) on the electroluminescence tester, test at last.
The luminous power result who records sees table 4.
Table 4 adopts method for making its electrode of the present invention to carry out the result of electroluminescence tester test
Analyze: can find out that from last table behind the electrode production method of employing this programme, the repeated standard deviation of test reduces to 2%, the photoelectricity test result who obtains is reliable and stable more.
What should explain at last is: the above is merely the preferred embodiments of the present invention; Be not limited to the present invention; Although the present invention has been carried out detailed explanation with reference to previous embodiment; For a person skilled in the art, it still can be made amendment to the technical scheme that aforementioned each embodiment put down in writing, and perhaps part technical characterictic wherein is equal to replacement.All within spirit of the present invention and principle, any modification of being done, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. the method for making of an electroluminescence test electrode may further comprise the steps:
(1) selects uniform indium grain;
(2) on epitaxial wafer, use fixation pressure to carry out deciding power and push the indium grain;
(3) the indium grain is carried out 350-400 ℃ of heating 1-3 minute, cooling 0.5-2 minute successively, decides power and push 2-8 second, repetitive cycling 2-10 time makes the resistance between indium grain and the epitaxial wafer reach stable.
2. the method for making of electroluminescence test electrode according to claim 1 is characterized in that: the heating-up temperature of said step (3) is 380 ℃.
3. the method for making of electroluminescence test electrode according to claim 1 is characterized in that: be 2 minutes the heat time heating time of said step (3).
4. the method for making of electroluminescence test electrode according to claim 1 is characterized in that: the cool time of said step (3) is for being 1 minute.
5. the method for making of electroluminescence test electrode according to claim 1 is characterized in that: the compressing time of said step (3) was 5 seconds.
6. the method for making of electroluminescence test electrode according to claim 1 is characterized in that: the cycle criterion of said step (3) is 3 times.
7. according to the method for making of any described electroluminescence test electrode among the claim 1-6, it is characterized in that: the described material roughness Ra >=5um that pushes the indium grain.
8. the method for making of electroluminescence test electrode according to claim 7 is characterized in that: the described material of pushing the indium grain is the facet of alundum (Al substrate.
9. the method for making of electroluminescence test electrode according to claim 1 is characterized in that: the standard of tolerance of said indium grain diameter is less than 5%.
10. the method for making of electroluminescence test electrode according to claim 1 is characterized in that: said pressure tolerance of pushing the indium grain is less than 1%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110431950.6A CN102520221B (en) | 2011-12-21 | 2011-12-21 | Manufacturing method of electroluminescence test electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110431950.6A CN102520221B (en) | 2011-12-21 | 2011-12-21 | Manufacturing method of electroluminescence test electrode |
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| Publication Number | Publication Date |
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| CN102520221A true CN102520221A (en) | 2012-06-27 |
| CN102520221B CN102520221B (en) | 2014-02-19 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201110431950.6A Expired - Fee Related CN102520221B (en) | 2011-12-21 | 2011-12-21 | Manufacturing method of electroluminescence test electrode |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107895692A (en) * | 2017-12-19 | 2018-04-10 | 淮北师范大学 | A kind of method for making its electrode |
| CN109444701A (en) * | 2017-08-31 | 2019-03-08 | 山东浪潮华光光电子股份有限公司 | A kind of nondestructive test device and test method of LED epitaxial wafer |
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| JPH05339721A (en) * | 1992-06-03 | 1993-12-21 | Mitsubishi Materials Corp | Production of indium oxide-tin oxide sputtering target |
| US6089442A (en) * | 1996-04-10 | 2000-07-18 | Canon Kabushiki Kaisha | Electrode connection method |
| CN1395305A (en) * | 2002-07-05 | 2003-02-05 | 清华大学 | LED epitaxial wafer electroluminescent nondestructive detection method |
| WO2003094222A1 (en) * | 2002-04-30 | 2003-11-13 | Toray Engineering Co., Ltd. | Bonding method and bonding device |
| CN1492449A (en) * | 1994-05-10 | 2004-04-28 | �������ɹ�ҵ��ʽ���� | Electrode member |
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2011
- 2011-12-21 CN CN201110431950.6A patent/CN102520221B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05339721A (en) * | 1992-06-03 | 1993-12-21 | Mitsubishi Materials Corp | Production of indium oxide-tin oxide sputtering target |
| CN1492449A (en) * | 1994-05-10 | 2004-04-28 | �������ɹ�ҵ��ʽ���� | Electrode member |
| US6089442A (en) * | 1996-04-10 | 2000-07-18 | Canon Kabushiki Kaisha | Electrode connection method |
| WO2003094222A1 (en) * | 2002-04-30 | 2003-11-13 | Toray Engineering Co., Ltd. | Bonding method and bonding device |
| CN1395305A (en) * | 2002-07-05 | 2003-02-05 | 清华大学 | LED epitaxial wafer electroluminescent nondestructive detection method |
Non-Patent Citations (2)
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| WTZ010: "引电极的几种方法", 《HTTP://WWW.ANTPEDIA.COM/VIEWSPACE-52078》 * |
| 汤子康等: "气相外延ZnSe单晶薄膜的蓝色电致发光", 《发光与显示》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109444701A (en) * | 2017-08-31 | 2019-03-08 | 山东浪潮华光光电子股份有限公司 | A kind of nondestructive test device and test method of LED epitaxial wafer |
| CN107895692A (en) * | 2017-12-19 | 2018-04-10 | 淮北师范大学 | A kind of method for making its electrode |
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| Publication number | Publication date |
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| CN102520221B (en) | 2014-02-19 |
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