CN102496842A - High pulse repetition frequency mode-locking optical fiber laser - Google Patents
High pulse repetition frequency mode-locking optical fiber laser Download PDFInfo
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- CN102496842A CN102496842A CN2011104217358A CN201110421735A CN102496842A CN 102496842 A CN102496842 A CN 102496842A CN 2011104217358 A CN2011104217358 A CN 2011104217358A CN 201110421735 A CN201110421735 A CN 201110421735A CN 102496842 A CN102496842 A CN 102496842A
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Abstract
A high pulse repetition frequency mode-locking optical fiber laser comprises a pump laser and a laser resonator, wherein the laser resonator is of an FP (Fabry-Perot) cavity structure. A gain medium and a mode-locking component are positioned between end faces of two optical fiber connectors, a bicolor film is plated on the end face of each optical fiber connector, a gain optical fiber is a phosphate optical fiber doped with rare earth ions, the mode-locking component is grapheme, one end of the laser resonator directly outputs via a laser isolator, the other end of the laser resonator is connected with an output end of a wavelength division multiplexer, an input end of the wavelength division multiplexer is connected with the pump laser, the other output end of the wavelength division multiplexer is connected with the laser isolator to output laser light, and the temperature of the laser resonator is controlled by a temperature control system. The high pulse repetition frequency mode-locking optical fiber laser can generate stable picosecond and even femtosecond without external additional modulation, the repetition frequency is larger than 1GHz ultra-short pulse sequence, and the optical fiber laser is simple in structure and capable of realizing all-fiber integration.
Description
Technical field
The invention belongs to ultrashort laser pulse, particularly a kind of high repetition mode locked fiber laser.
Background technology
High repetition frequency (abbreviating high repetition as) ultrashort pulse laser is scientific research, industry, national defense and military key technologies for application such as high-speed light sampling, accurate distance measurement, precision lidar; Being one of forward position direction of laser technology development, also is a big hot issue in recent Laser Study field.Higher repetition rate means bigger longitudinal mode spacing.Each rank longitudinal mode on the above magnitude mode locking pulse of the GHz sequence frequency domain can be distinguished by existing filter element; Be easy to realize single longitudinal mode is carried out intensity, phase modulated; Obtain needed waveform, thereby be applied in fields such as high speed optical communication system, laser and matter interaction, quantum dynamics control.
Mode locked fiber laser is to realize one of effective and efficient manner of ultrashort pulse.Present existing high repetition modelocked fiber device has active mode locking, passive harmonic mode locking and three kinds of modes of Ultrashort cavity locked mode.
Active mode locking [referring to Feng, H., et al.; Generation of 10-GHz ultra-short pulseswith low time jitter in an actively mode-locked fiber laser.Laser Physics; Destroyed all optical fibre structure 2011.21 (2)] increased active modulator, further in order to obtain high repetition and stable pulse train, need complicated high-frequency circuit and feedback circuit as support; Control; This will directly cause the complicated and expensive of system, and because the restriction of electricity bandwidth, and the weak point of pulse can only reach picosecond magnitude;
Though adopt passive harmonic mode locking can obtain the femtosecond pulse [referring to Sobon, G., et al.; 10GHzpassive harmonic mode-locking in Er-Yb double-clad fiber laser.OpticsCommunications; 2011.284 (18)], but need very high pump power to reach high order harmonics usually, again because be not to work in the fundamental frequency state; There are certain problem in the uniformity of its pulse and stability, and the structure of fiber laser is also comparatively complicated usually.
Do not need the active modulator spare in any external world based on the high repetition frequency passive mode locking technology of short bore configurations; And, need not consider chromatic dispersion problem basically because the chamber is long shorter, laser structure is simple; Pulse quality is more stable, but its stable state mode locking pulse repetition rate depends on cavity length.
Phosphate glass has high solubility to rare earth ion; And can ignore a cluster effect; Along with multi-component oxide glass optical fiber Development of Preparation Technology; Both at home and abroad all prepare the Yb codoped phosphate glass optical fiber that gain coefficient reaches 5dB/cm, in the short cavity single frequency optical fiber laser, obtained good application.The gain coefficient of mixing the RE phosphate glass optical fiber makes it become the The perfect Gain medium of the high repetition passive mode-locking fiber laser of research than high two one magnitude of silica fiber.
The Ultrashort cavity mode locked fiber laser adopts phosphate optical fiber as gain media basically, its locked mode device adopt mostly semiconductor saturated absorption mirror (abbreviating SESAMs as) [referring to Byun, H.; Et al., Compact, stable1GHz femtosecond Er-doped fiber lasers.Appl.Opt.; 2010.49 (29)]; Yet the SESAMs tunable range is very narrow, and needs very complicated production and packaging process, and its heat dissipation problem also need be paid special attention to.A kind of simple and economic replacement scheme is to adopt SWCN (abbreviating SWCNTs as) [Yamashita; S., et al., 5-GHz pulsed fiber Fabry-Perot laser mode-locked using carbonnanotubes.Photonics Technology Letters; IEEE; 2005.17 (4)], its operation wavelength depends on the diameter of SWCNTs, and tunable range is narrower; If obtain the SWCNTs that bigger adjustable extent must adopt multiple diameter, this will cause the increase of unsaturation loss and reducing of damage threshold, thereby influence its saturable absorption effect.
Summary of the invention
To the deficiency of above-mentioned prior art, the object of the present invention is to provide a kind of high repetition mode-locked laser, this mode locked fiber laser; It is little to have volume, and system is simple, and transformation efficiency is high; The use wave-length coverage is big, and damage threshold is high, the stable characteristics of ultrashort pulse output performance of generation.
Technical solution of the present invention is following:
A kind of high repetition mode locked fiber laser comprises pump laser and laserresonator, and its characteristics are; Described laserresonator is the FP cavity configuration; Gain media and locked mode element are between the end face of two fiber optic connectors, and the end face of this fiber optic connector is coated with Double-color film, and described gain fibre is rare-earth-ion-doped phosphate optical fiber; Described locked mode element is a Graphene; One end of described laserresonator is directly exported through the laser isolator, an output of another termination wavelength division multiplexer of this laserresonator, a described pump laser of input termination of this wavelength division multiplexer; Another output termination laser isolator output laser of this wavelength division multiplexer, the temperature of described laserresonator is controlled by temperature control system.
Described gain fibre is rare-earth-ion-doped phosphate optical fiber, and the span of its length is 1-5cm.
Described Double-color film be have the output laser wavelength scope of described laserresonator (2) high anti-, the Double-color film that the pump light height of described pump laser is passed through; Preferred laser output reflection rate 90%, pumping wave band transmissivity is greater than 95%.
Described locked mode element is a Graphene, and this Graphene adopts photoinduction absorption or sputtering technology to be plated on the described Double-color film and obtains, or adopts into the single-layer graphene film and directly be attached on the Double-color film and process.
Light by pump laser output gets into gain fibre through wavelength division multiplexer and Double-color film, and the laser of generation is resonance between two Double-color films, and is modulated by the locked mode element and to form the ultrashort pulse output that can be coupled simultaneously from two ends.The effect of described isolator is to prevent to export distribution and the formation that laser-bounce influences endovenous laser.
The effect of said temperature control system is to prevent that heat accumulation effect in the laser long-term operation process to the interference of laser stable operation, also having guaranteed laser works in optimum temperature simultaneously, and the pulse that obtains maximum conversion efficiency and best stabilized is exported.
Described gain fibre is rare-earth-ion-doped phosphate optical fiber, and length 1-5cm is adjustable, and repetition rate can reach 2-10GHz.
Said isolator is a laser output wave band isolator.
The present invention has following beneficial effect:
1,, has ultrashort recovery time, lower saturation threshold and unsaturation loss based on the saturated absorbing body of Graphene in recent years to the discovering of Graphene.Different with big surface tension with the minor radius of SWCNTs, Graphene is owing to unique two-dimensional structure, and its surface tension is very little, has the damage threshold higher than SWCNTs.Compare with the wavelength selectivity of different tube wall diameter SWCNTs, Graphene has smooth transmitance in wide region, can be used for the locked mode in the wide range of wavelengths.Therefore, based on the more promising and using value of ultrashort light pulse generating technique of Graphene locked mode.
2, the present invention is based on the high repetition mode locked fiber laser of Graphene; Be to mix RE phosphate optical fiber to place ceramic contact pin to dock, and utilize Graphene, produce the passive mode-locking fiber laser of ultrashort pulse as saturated absorbing body with the ordinary optic fibre connector; Simple in structure; Stable performance is that a kind of very potential high repetition ultrashort pulse produces carrier, is with a wide range of applications.
3, adopt active modulator and long annular chamber relatively with traditional based on the high repetition mode locked fiber laser of active mode locking, the present invention need not any active modulator, promptly need not the complicated circuitry reponse system it is controlled, so system configuration is simple; And the present invention to have a volume little, simple in structure, the characteristics that system is succinct;
4, compare with complicated cavity body structure and the long annular chamber of the high repetition mode locked fiber laser of passive harmonic mode locking, cavity body structure of the present invention is very simple, easy to adjust; And the present invention works in the fundamental frequency state, and laser output is more stable.
5, present existing Ultrashort cavity mode locked fiber laser; Main semiconductor saturated absorption mirror (SESAMs) and the SWCN (SWCNTs) of adopting compared with SWCN (SWCNTs) with semiconductor saturated absorption mirror (SESAMs) as the locked mode element, and locked mode element of the present invention is prone to preparation; Cost is low; Wavelength tuning range is big, and the unsaturation loss is little, the characteristics that damage threshold is big.
6, experiment shows that the present invention does not need extraneous additional modulation can produce stable psec and even femtosecond magnitude, and repetition rate is greater than the ultrashort pulse sequence of 1GHz, and is simple in structure, can realize that full optical fiber is integrated.
Description of drawings
Fig. 1 is the structure chart of the high repetition mode locked fiber laser of the present invention
Fig. 2 is the structure chart of the resonant cavity of the high repetition mode locked fiber laser of the present invention
Embodiment
Below in conjunction with embodiment the present invention is described further, but should limit protection scope of the present invention with this.
The structure of the high repetition mode locked fiber laser of the present invention is as shown in Figure 1.Visible by figure, the high repetition mode locked fiber laser of the present invention comprises pump laser 7 and laserresonator 2; Described laserresonator 2 is FP cavity configurations; Gain media 11 and locked mode element 10 are between the end face of two fiber optic connectors 8, and the end face of this fiber optic connector is coated with Double-color film 9, and described gain fibre 11 is rare-earth-ion-doped phosphate optical fiber; Described locked mode element 10 is a Graphene; One end of described laserresonator 2 is through 1 output of laser isolator, an output of another termination wavelength division multiplexer 5 of this laserresonator 2, the described pump laser 7 of the input termination of this wavelength division multiplexer 5; Another output of this wavelength division multiplexer 5 is through laser isolator 1 output laser; The temperature of described laserresonator 2 is controlled by temperature control system, and this temperature control system is made up of thermistor 4 and semiconductor cooler 5 and temperature control circuit 6 thereof, guarantees that laser works is in optimum temperature.
Described gain fibre 11 is rare-earth-ion-doped phosphate optical fiber, and the span of its length is 1-5cm.
Described Double-color film 9 be have the output laser wavelength scope of described laserresonator 2 high anti-, the Double-color film that the pump light height of described pump laser 7 is passed through; Preferred laser output reflection rate 90%, pumping wave band transmissivity is greater than 95%.
Described locked mode element 10 is a Graphene, and this Graphene adopts photoinduction absorption or sputtering technology to be plated on the described Double-color film 9 and obtains, or adopts into the single-layer graphene film and directly be attached on the Double-color film 9 and process.
The concrete parameter of an embodiment is following: described pump laser 7, use the 980nm single mode semiconductor laser, and power output 200-600mW is optional; Described isolator 1 adopts 1550nm wave band polarization independent optical isolator; The copper encapsulation box of described laserresonator 2 usefulness encapsulates; Described wavelength division multiplexer 3 is to adopt fused tapered 980/1550nm wave division multiplex coupler; 4,5,6 is respectively thermistor; Semiconductor cooler (TECs) and temperature control circuit board and power supply constitute temperature control system, and this is that general prior art is pardoned me and repeated no more at this.
Wherein, the laser that 980nm semiconductor laser 7 sends gets into laserresonator 2 through wavelength division multiplexer 3, and the laser of these laserresonator 2 outputs is through isolator 1 output, and isolator 1 has been isolated reflector laser, has guaranteed that the light field in the laser cavity is unaffected.The adjustment laser is to optimum state, and the encapsulation of copper box guarantees that laser cavity is not influenced by outside air vibration etc.Thermistor 4, semiconductor cooler (TECs) 5 and temperature control circuit board 6 and switch are formed the temperature control reponse system, guarantee that laser operates in the optimum temperature state, reduce the influence of ambient temperature to the heat accumulation effect of its influence and the long-time running of laser.After therefore whole laser starts, when pump power surpasses the locked mode threshold value, be in steady operational status basically.
Fig. 2 provides the structural representation in the high repetition mode locked fiber laser of the present invention chamber.Among Fig. 2,10 is graphene film; 8 is the PC/FC optical fiber connector of 1060 optical fiber, the 9th, and 1550nm wave band 90% reflectivity, the 980nm wave band is greater than the film 9 of 95% transmissivity; 11 is the phosphate optical fiber of 1cm erbium and ytterbium codoping; Therefore the chamber that obtains is about 1cm, and can obtain repetition rate is the ultrashort pulse sequence of 10GHz.
The FC/PC optical fiber connector 8 that are coated with optical maser wavelength Double-color film 9 by the surface based on the high repetition mode locked fiber laser chamber of Graphene constitute the FP chamber as resonator mirror; Wherein an end connector 8 is in the method for Double-color film 9 surface by utilizing photoinductions absorption, and control luminous power and time, absorption monolayer graphene film from Graphene DMF solution, and oven dry obtain locked mode element 10; Yb codoped phosphate optical fiber 11 is placed in the standard ceramic contact pin fixing.Combined and spliced and the encapsulation of three can obtain the laserresonator 2 among Fig. 1.
Experiment shows that the present invention does not need extraneous additional modulation can produce stable psec and even femtosecond magnitude, and repetition rate is greater than the ultrashort pulse sequence of 1GHz, and is simple in structure, can realize that full optical fiber is integrated.
Claims (4)
1. one kind high repetition mode locked fiber laser comprises pump laser (7) and laserresonator (2), it is characterized in that; Described laserresonator (2) is the FP cavity configuration; Gain media (11) and locked mode element (10) are positioned between the end face of two fiber optic connectors (8), and the end face of this fiber optic connector is coated with Double-color film (9), and described gain fibre (11) is rare-earth-ion-doped phosphate optical fiber; Described locked mode element (10) is a Graphene; One end of described laserresonator (2) is through laser isolator (1) output, an output of the input termination wavelength division multiplexer (5) of this laserresonator (2), the described pump laser of input termination (7) of this wavelength division multiplexer (5); Another output of this wavelength division multiplexer (5) is through laser isolator (1) output laser; The temperature of described laserresonator (2) is controlled by temperature control system, and this temperature control system is made up of thermistor (4) and semiconductor cooler (5) and temperature control circuit (6) thereof, guarantees that laser works is in optimum temperature.
2. high repetition mode locked fiber laser according to claim 1, the span that it is characterized in that described rare-earth-ion-doped phosphate length of fiber is 1-5cm.
3. high repetition mode locked fiber laser according to claim 1; It is characterized in that described Double-color film (9) be have the output laser wavelength scope of described laserresonator (2) high anti-, the Double-color film that the pump light height of described pump laser (7) is passed through; Preferred laser output reflection rate 90%, pumping wave band transmissivity is greater than 95%.
4. high repetition mode locked fiber laser according to claim 1; It is characterized in that described Graphene adopts photoinduction absorption or sputtering technology to be plated on described Double-color film (9) and goes up and obtain, or adopt into the single-layer graphene film and directly be attached on the Double-color film (9) and process.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103606803A (en) * | 2013-11-07 | 2014-02-26 | 北京工业大学 | Fiber cladding light stripper for high-power fiber laser |
| CN105811228A (en) * | 2016-05-30 | 2016-07-27 | 中国科学院半导体研究所 | Highly-doped broad-spectrum erbium-ytterbium co-doped superfluorescent fiber source integrated device |
| CN106921107A (en) * | 2015-12-28 | 2017-07-04 | 恩耐公司 | The individual pulse of the fully controllable burst shaping from psec optical fiber laser |
| CN107611757A (en) * | 2017-09-23 | 2018-01-19 | 华南理工大学 | A kind of weak modulation F P chambers of two-part |
| US10315274B2 (en) | 2011-09-20 | 2019-06-11 | Nlight, Inc. | Laser marking method and system and laser marked object |
| CN111900600A (en) * | 2020-06-30 | 2020-11-06 | 华南理工大学 | Compact laser machine case capable of carrying out temperature control and repetition frequency locking |
| CN113036586A (en) * | 2021-03-10 | 2021-06-25 | 厦门大学 | On-chip integrated high repetition frequency laser resonant cavity device and ultrashort pulse laser |
| WO2023179747A1 (en) * | 2022-03-24 | 2023-09-28 | 华南理工大学 | Ultra-short resonant cavity high repetition frequency fiber laser with adjustable repetition frequency |
Citations (1)
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| US20110222562A1 (en) * | 2009-07-24 | 2011-09-15 | Advalue Photonics, Inc. | Mode-Locked Two-Micron Fiber Lasers |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110222562A1 (en) * | 2009-07-24 | 2011-09-15 | Advalue Photonics, Inc. | Mode-Locked Two-Micron Fiber Lasers |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10315274B2 (en) | 2011-09-20 | 2019-06-11 | Nlight, Inc. | Laser marking method and system and laser marked object |
| CN103606803A (en) * | 2013-11-07 | 2014-02-26 | 北京工业大学 | Fiber cladding light stripper for high-power fiber laser |
| CN106921107A (en) * | 2015-12-28 | 2017-07-04 | 恩耐公司 | The individual pulse of the fully controllable burst shaping from psec optical fiber laser |
| CN105811228A (en) * | 2016-05-30 | 2016-07-27 | 中国科学院半导体研究所 | Highly-doped broad-spectrum erbium-ytterbium co-doped superfluorescent fiber source integrated device |
| CN107611757A (en) * | 2017-09-23 | 2018-01-19 | 华南理工大学 | A kind of weak modulation F P chambers of two-part |
| CN107611757B (en) * | 2017-09-23 | 2024-04-19 | 华南理工大学 | Two-section type weak modulation F-P cavity |
| CN111900600A (en) * | 2020-06-30 | 2020-11-06 | 华南理工大学 | Compact laser machine case capable of carrying out temperature control and repetition frequency locking |
| CN113036586A (en) * | 2021-03-10 | 2021-06-25 | 厦门大学 | On-chip integrated high repetition frequency laser resonant cavity device and ultrashort pulse laser |
| CN113036586B (en) * | 2021-03-10 | 2022-11-01 | 厦门大学 | On-chip integrated high repetition frequency laser resonant cavity device and ultrashort pulse laser |
| WO2023179747A1 (en) * | 2022-03-24 | 2023-09-28 | 华南理工大学 | Ultra-short resonant cavity high repetition frequency fiber laser with adjustable repetition frequency |
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Application publication date: 20120613 |