CN102396058A - Detecting defects on a wafer - Google Patents
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Abstract
Methods and systems for detecting defects on a wafer are provided.
Description
Priority request
The title that the application requires on February 13rd, 2009 to submit to is the U.S. Provisional Application No.61/152 of " Methods and Systems for Detecting Defects on a Wafer (being used to detect the method and system of the defective on the wafer) "; 477 priority; It is merged in way of reference, treats as in this article and is set forth fully.
Background technology
1. skill this area
The present invention relates in general to the defective that detects on the wafer.Each output that some embodiment relates in the original output that check system is produced to wafer is assigned to different piece.
2. description of related art
Following description and instance rely on its interior in this section content and are not admitted to be prior art.
The wafer inspection that uses optics or electron beam technology to carry out is a kind of important technology that is used for adjusting semiconductor fabrication process, monitoring process variation and improves the productive rate of semi-conductor industry.Along with the size of modern integrated circuits (IC) reduces and the complexity of manufacturing process increases day by day, the inspection more and more difficult that becomes.
In each procedure of processing that semiconductor wafer is carried out, identical circuit pattern is printed in each tube core (die) on the wafer.Most of chip checking systems have utilized this fact and have used simple relatively tube core-tube core (die-to-die) relatively to detect the defective on the wafer.Yet the printed circuit in each tube core can comprise many zones of the patterned features (patterned feature) that repeats along x or y direction, as, the zone of DRAM, SRAM or FLASH.Such zone is commonly referred to as array area (remaining areas is known as at random or logic area).In order to realize better susceptibility, advanced check system adopts Different Strategies to check array area and at random or logic area.
In order to create the wafer inspection technology that is used to carry out array testing technologies, the check system of many current uses needs user's manual creation interest region (ROI) and in identical ROI, is used for same group of parameter of defects detection.Yet for a variety of reasons, this creation method is disadvantageous.For example, when design specification is reduced, area limiting maybe be complicated many and area is much little.Owing to have limitation aspect objective table (stage) accuracy of check system and the resolution, so manual creation ROI will finally become infeasible.On the other hand, if the degree of dividing the distance between the footers (page break) can carry out greater than Fourier filtering then will not suppress the branch footers in the array area.
In another approach, with intensity as divided characteristic, together with the group pixels that will be similar to intensity.Then, same group of pixel (based on intensity) used same group of parameter.Yet this method also has a plurality of shortcomings.For example, when geometric properties evenly disperses, can use partitioning algorithm based on intensity.Yet this is not enough usually.Therefore, need divide based on other character.
Therefore, will be advantageously, develop the method and system that detects the defective on the wafer, it can be learnt that institute's defective of paying close attention to and noise/noise are in the different piece on the geometry through utilization and realize better defects detection.
Summary of the invention
To be interpreted as the theme of restriction appended claims down never in any form in the face of the description of various embodiments.
Embodiment relate to a kind of detect defective on the wafer by computer implemented method.Comprise by computer implemented method and to obtain the original output that produces to wafer by check system.One or more characteristic that also comprises the original output that one or more geometrical property (geometrical characteristic) of the patterned features that forms on identification and the said wafer is corresponding by computer implemented method.In addition; Comprise one or more characteristic by computer implemented method based on the said original output that identifies; Single output in the said original output is assigned to different piece, make with said different piece in one or more geometrical property of the corresponding said patterned features of each several part be different.In addition, comprise by computer implemented method one or more defects detection parameter is assigned to said different piece separately.Also comprise the said single output that said one or more defects detection parameter of distributing is applied to be assigned to said different piece by computer implemented method, detect the defective on the said wafer thus.
Above-mentioned each step by computer implemented method can be carried out like this paper with further describing.Above-mentioned any other step (one or more) that can comprise any other method (one or more) described herein by computer implemented method.Can use any system described herein to carry out above-mentioned by computer implemented method.
Another embodiment relates to a kind of computer-readable medium, and it is included in the executable program command that is used to realize detecting the method for the defective on the wafer on the computer system.Said method comprises above-mentioned step by computer implemented method.Computer-readable medium can further be constructed as described hereinly.Can carry out the step of said method like this paper with further describing.In addition, the method for executable program instructions can comprise any other step (one or more) of any other method (one or more) described herein.
Other embodiment relates to a kind of system that detects the defective on the wafer that is configured.Said system comprises the inspection subsystem, and it is configured through scanning said wafer and produces original output to wafer.Said system also comprises computer subsystem, and it is configured and obtains said original output.Computer subsystem also be configured discern with said wafer on one or more characteristic of the corresponding original output of one or more geometrical property of the patterned features that forms.In addition; Computer subsystem is configured one or more characteristic based on the said original output that identifies; Single output in the said original output is assigned to different piece, make with said different piece in one or more geometrical property of the corresponding said patterned features of each several part be different.Computer subsystem also is configured one or more defects detection parameter is assigned to said different piece separately.In addition, computer subsystem is configured the said single output that said one or more defects detection parameter that will distribute is applied to be assigned to said different piece, detects the defective on the said wafer thus.Said system can further be configured like this paper with describing.
Description of drawings
Embodiment below having read and with reference to after the accompanying drawing, other purposes of the present invention and advantage will become clear, in the accompanying drawings:
Fig. 1 is the block diagram that illustrates an embodiment of computer-readable medium, and this computer-readable medium is included in the executable program command that is used to realize one or more method embodiment described herein on the computer system; And
Fig. 2 is the sketch map that illustrates the end view of an embodiment that is configured the system that detects the defective on the wafer.
Though the present invention forms easily various modifications and alternative form, its specific embodiments is shown in the drawings and will describe in detail in this article with the mode of embodiment.Yet; Should be appreciated that; Accompanying drawing and its specific descriptions are not intended to limit the invention to disclosed concrete form; But on the contrary, the present invention is intended to contain interior all modifications, equivalents and the alternative form of the spirit and scope of the present invention that claims limit of liking enclosed that fall into.
Embodiment
Although embodiment is described to wafer in this article; But be appreciated that these embodiments can be used to detect another sample (as; Mask (reticle)) defective on, this mask also can be known as mask (mask) or photomask (photomask) usually.Be known in the art many dissimilar masks, and the term " mask ", " mask " and " photomask " that use like this paper are intended to contain all types of mask known in the art.
Embodiment relate to the defective that is used to detect on the wafer by computer implemented method.Comprise that by computer implemented method obtaining check system is directed against the original output that wafer produces.Can use check system to carry out and obtain step to the original output of wafer.For example, the step of obtaining original output can comprise uses check system scan light above wafer, and produces original output by the detected light from wafer scattering and/or reflection of check system in response to scan period.In this way, the step of obtaining original output can comprise the scanning wafer.Yet obtaining original output is not necessarily to comprise the scanning wafer.For example, the step of obtaining original output can comprise from the storage medium that has wherein stored original output (for example, being stored by check system) obtains original output.Can adopt any suitable method to carry out and obtain the step of original output, and the storage medium that therefrom obtains output can comprise any storage medium described herein from storage medium.Under any circumstance, said method comprises original output (for example, initial data) collection.
In one embodiment, original output is in response to the light from the wafer scattering.Particularly, original output can be in response to from wafer scattering and the light that detected by check system.Alternatively, original output can be in response to from wafer reflection and the light that detected by check system.Original output can comprise any suitable original output and can be according to the structure of check system and different.For example, original output can comprise signal, data, view data etc.In addition, original output can be generally defined as the output of check system at least a portion (for example, a plurality of pixels) in the integral body output of wafer generation.In addition; All original outputs that original output can comprise all original outputs that check system is directed against entire wafer and produces, produce to the entire portion that is examined system scan in the wafer, all original outputs of wafer being produced by an access needle of check system etc., and whether irrelevant with original output corresponding to the defective on the wafer.
By contrast, single output can be generally defined as by the output of check system to the single pixel in the integral body output of wafer generation.Therefore, original output can comprise a plurality of single outputs.In other words, single output can be the output that produces separately to the diverse location on the wafer.For example, single output can comprise the single discrete output that produces to the diverse location on the wafer.Particularly, diverse location can be corresponding to the difference on the wafer " checkpoint ".In other words, diverse location can be corresponding to separately it being produced the position of output by check system on the wafer.In this way, diverse location can be carried out " measurement " by check system in these positions corresponding to each position on the wafer.So, diverse location can be according to the structure of check system (for example, check system produces the mode of output to wafer) and different.Single output comprise with wafer on the corresponding or not corresponding single output of defective.
Can construct check system like this paper with describing.For example, can construct check system to details in a play not acted out on stage, but told through dialogues (DF) inspection of wafer.In this way, check system can comprise the DF check system.Can construct the DF check system like this paper with further describing.In another embodiment, can construct check system to bright field (BF) inspection of wafer.In this way, check system can comprise the BF check system.The BF check system can have any suitable constructions known in the art.Can also check to BF and DF and construct check system.In addition, check system can be constructed to ESEM (SEM) inspection and auditing system, and this check system can have any suitable constructions known in the art.In addition, can construct check system, patterned wafers is checked and possibly checked to patterned wafers not.
One or more characteristic that also comprises the original output that one or more geometrical property of the patterned features that forms on identification and the wafer is corresponding by computer implemented method.In one embodiment, one or more characteristic of the original output that identifies comprises in the original output along each projection of going.Projection can be generally defined as the group or the set of the single output that has certain pattern in the original output.For example, can assemble the projection of (gather) original output along horizontal line and vertical row.In this way, can discern and limit or corresponding to x and y projection in the original output of one or more geometrical property of patterned features.So, the step of discerning one or more characteristic of original output can comprise carries out two dimension (2D) projection to original output.Yet one or more characteristic of the original output corresponding with one or more geometrical property of patterned features on being formed on wafer can comprise any other characteristic (one or more) of original output.Can use any suitable method and/or algorithm, carry out the step of one or more characteristic of the original output of as above described identification in any suitable manner.
In one embodiment, one or more geometrical property of patterned features comprises mathematical computations or their certain combination of the geometry of edge, shape, texture, limiting pattern characteristic.The characteristic that for example, can be used for dividing based on geometry (can carry out like this paper) comprises any mathematical computations/conversion of edge, shape, texture, qualification geometry or their certain combination with further describing.Although all patterned features that form on the wafer possibly have certain roughness and therefore have certain " texture "; But the difference of texture and roughness is; Roughness is generally used for just expression and describes the roughness on the patterned features periphery; And the whole texture of texture ordinary representation patterned features (for example, according to design or not according to design).The embodiment of mathematical computations/conversion that can be used for the geometry of limiting pattern characteristic is the Fourier filtering algorithm, and it can be used to describe the relation between geometry and the light scattering.For example, the Fourier filtering algorithm can be used for predicting that original output will be corresponding to the projection of one or more geometrical property of patterned features.
In one embodiment, will how to influence one or more characteristic of original output, carry out the step of one or more characteristic of the original output of identification based on the layout of patterned features.The characteristic that for example, can be used for dividing (can carry out like this paper) is a layout with describing.Particularly, layout can be used for discerning one or more geometrical property of the patterned features of layout.Then, can confirm one or more characteristic (for example, projection) of the original output that (for example, rule of thumb, according to theory etc.) will be corresponding with one or more geometrical property that identifies.In this way, can confirm one or more characteristic of the original output of expectation that will be corresponding with one or more geometrical property of patterned features.Then; Can in any suitable manner one or more characteristic of said expectation and one or more characteristic of original output be compared, with one or more characteristic of the identification original output corresponding with one or more geometrical property of patterned features.The layout that in this step, uses can obtain in any suitable way and can have any suitable form.
In another embodiment, when the step of original output is obtained in execution, carry out the step of one or more characteristic of the original output of identification.In this way, when check system just scans wafer, can carry out the step of one or more characteristic of the original output of identification by immediate mode (on-the-fly).For example; Can use the original output of the reference of wafer to carry out the step of one or more characteristic of the original output of identification, the original output of said reference will with original output compare with detect the defective on the wafer and be with original output with obtaining to wafer in the swash width (pass) once.Can comprise any reference value described herein with reference to original output.So, can also obtain between the original period of output of wafer, carry out other steps described herein (for example, dividing) by immediate mode, said other steps are to use one or more characteristic of the original output that identifies to carry out.
Also comprise by computer implemented method: based on one or more characteristic of the original output that identifies; Single output in the original output is assigned to different piece, make with different piece in one or more geometrical property of the corresponding patterned features of each several part be different.In this way, to division, construct embodiment described herein based on geometry.More specifically, embodiment described herein is utilized (one or more) geometrical property (for example, shape) of wafer pattern will how to influence original output and how will be divided into different piece by the pattern that different modes influences original output.In other words, embodiment described herein utilizes (one or more) geometrical property (for example, shape) of pattern on the wafer will how to influence original output so that the single output in the original output is divided into different piece.For example, the patterned features with one or more different geometrical properties can produce Different Effects to the light from the wafer scattering, and can produce Different Effects to the original output that produces to wafer thus.Through embodiment described herein, can said patterned features be divided into different piece effectively.Can use any suitable method and/or algorithm, carry out in any suitable manner like this paper and the single output in the original output is assigned to the step of different piece with describing.
" part " can be generally defined as the different piece in the gamut of probable value of single output.Can limit these parts based on the value of the different qualities of single output, this depends on the defects detection algorithm that uses these parts.For example, in multitube core automatic threshold (MDAT) algorithm, the value of characteristic that is used to limit the single output of these parts can comprise the intermediate intensity value.In a this exemplary and non-restrictive example, if the gamut of intermediate intensity value is from 0 to 255, then first can comprise that from 0 to 100 intermediate intensity value and second portion can comprise from 101 to 255 intermediate intensity value.In this way, first corresponding in the original output than dark areas, and second portion corresponding in the original output than bright area.Under some situation, can use wafer to limit these parts, and for a said wafer that wafer has approximate geometry, can use these predetermined parts.
In one embodiment, automatically carry out one or more characteristic of the original output of identification and single output is assigned to the step of different piece, and need not user's input.For example, (one or more) geometrical property (for example, shape) and projection that embodiment described herein can be utilized pattern on the wafer come automatically the single output in the original output to be divided into different piece.In this way; With comprise manual creation interest region (ROI) and in identical ROI, be used for the method for same group of parameter of defects detection different; When design specification is reduced and when the zones of different on the wafer that will be divided diminishes; Use embodiment described herein, it is more complicated that partiting step will not become.In addition, different with manual methods, automatically discern one or more characteristic of original output and single output is assigned to different piece and the step that need not user input does not receive the influence of check system objective table precision and resolution limit.Therefore, use embodiment described herein to divide, check system objective table precision and resolution limit will can not make partiting step become infeasible.
In another embodiment, do not consider the design data that is associated with patterned features, carry out the step that single output is assigned to different piece.For example, though can use layout to confirm one or more characteristic of the original output of expectation that will be corresponding as stated, do not carry out partiting step based on design data itself with one or more geometrical property of patterned features.In other words, how one or more geometrical property that partiting step is based on patterned features will influence original output, rather than based on one or more geometrical property of patterned features itself.In this way; The additive method and the system that divide original output with the design data that is associated based on patterned features are different; To how influence original output through one or more geometrical property and carry out partiting step based on patterned features; The patterned features that can cause with different designs data, different electric function, different electric characteristic, use the different critical attitude etc. of the performance of the device that patterned features forms to be associated is assigned to a part, and prerequisite is that these patterned features will influence original output in the same manner.For example; (one or more) characteristic through will how influencing original output based on (one or more) geometrical property (for example; Intensity) but not carry out partiting step based on the geometry of itself; The patterned features that can cause in original output producing remarkable noise is assigned to and need not to consider the design data that is associated with these patterned features with a part, and can cause in original output, producing other patterned features that can ignore noise to be assigned to different piece again and the design data that need not to consider to be associated with these other patterned features.In this way, the patterned features of strong noise can be divided into together, and low noise patterned features can be divided into together.
In other embodiment, do not consider the intensity of single output, carry out the step that single output is assigned to different piece.In other words; Though one or more characteristic based on the original output that identifies is carried out partiting step; But do not carry out partiting step based on the intensity of single output itself, said one or more characteristic can be discerned based on the intensity of a plurality of single outputs in the original output.For example, projection of each row can comprise the single output that has diversity and possibly have remarkable varying strength in the original output.But all single output can be corresponding to one or more identical geometrical property of the patterned features such as minute footers.So, can be assigned to a part corresponding to all single outputs of one or more identical geometrical property of patterned features, even all single output can have significantly different intensity.In this way, different with the method for carrying out partiting step based on the intensity of single pixel, will not receive the influence of the non-uniform scattering of patterned features through the partiting step of embodiment execution described herein.
In some embodiments, the step that single output is assigned to different piece comprises: analyze one or more characteristic of the original output that identifies and with threshold application to this single output.For example, as stated, the horizontal line in the original output and the projection of vertical row can be assembled.Then, can analyze these projections, and threshold value can be set, the single output in the original output is divided into the zones of different of being paid close attention to (part).One or more characteristic of the original output that identifies through analysis and with threshold application in single output, can reduce the quantity of the single output corresponding that is assigned to these parts improperly with borderline region.
In one embodiment; Comprise one or more geometrical property of branch footers with in the different piece one one or more corresponding geometrical property of part, and one or more geometrical property corresponding with another part in the different piece comprises one or more geometrical property of array area.In the art, divide footers to be generally defined as the die area of the basic continuum of separate physical memory.Each continuum of physical storage can be known as page frame (page frame) usually.Through carrying out partiting step like this paper with describing; One or more characteristic of the original output of the geometry of the branch footers in the qualification array area (for example; X and/or y projection) can be identified, and be used for the single output corresponding with minute footers is assigned to a part and will be assigned to different piece with the corresponding single output of array area.
In another embodiment, one or more characteristic of the original output corresponding with one or more geometric properties of some patterned features can not suppress through Fourier filtering.For example, different with the certain methods of carrying out partiting step, even the distance between the branch footers also can suppress the branch footers in the array area greater than the distance that can carry out Fourier filtering.In such embodiment; For some check system; If divide the width of footers to be approximately 5 μ m and divide the interval between the footers to be approximately 5 μ m, then Fourier filtering becomes unrealistic (if not infeasible words) and the manual creation of ROI also becomes unrealistic (if not infeasible words).Therefore, owing to the signal (noise) that divides footers in original output, to produce possibly can't be inhibited, and therefore can reduce the defects detection susceptibility that can use original output to realize.Yet; Use embodiment described herein; Can be (for example; Based on the projection in the original output) identification with divide footers corresponding single output, and can the single output corresponding with minute footers be assigned to a part and can other single output be assigned to other parts, feasiblely can use varying sensitivity to detect the defective in the different piece like this paper with further describing.
Also comprise by computer implemented method one or more defects detection parameter is assigned to different piece separately.Can separately one or more defects detection parameter be assigned to all different pieces.Therefore, certain single output can not be left in the basket when it is used for defects detection.On the contrary, can use the single output that is assigned to all different pieces to detect some defective.In other words, can use all parts of original output to detect defective.In this way, can adopt different inspection schemes, handle different piece by different way.The difference of different inspection schemes can be the defects detection algorithm that is assigned to different piece.Alternatively, the difference of different inspection schemes can be one or more parameter that is assigned to the same defects detection algorithm of different piece.Be assigned to the defects detection algorithm that different piece or one of which or more a plurality of parameters are assigned to different piece and can comprise any suitable defects detection algorithm.For example, the defects detection algorithm can be segmentation automatic threshold (SAT) algorithm or MDAT algorithm.In fact this defects detection algorithm can be suitable for BF and detect.Yet the defects detection algorithm can be the defects detection algorithm that is suitable for the DF inspection.For example, the defects detection algorithm can be FAST algorithm or HLAT algorithm.
The difference of different inspection schemes can also be to be used to obtain one or more optical parametric of check system of the original output of wafer.For example; In the multiple-pass inspection; Can carry out different strokes with the different value of at least one optical parametric (for example, polarization, wavelength, irradiating angle, laser angle etc.) of check system, and the original output that in different strokes, produces can be used for detecting the defective of wafer zones of different; In said zones of different, form patterned features with one or more different geometrical properties.In this way, can use the original output that in the different strokes of the multiple-pass inspection of using one or more different optical parameter to carry out, produces, inspection comprises the wafer area of the patterned features with one or more different geometrical properties.
In one embodiment, one or more defects detection parameter comprises the threshold value that is applied to difference between single output and the reference value.In this way, according to the part that is assigned with single output, can be with the difference of different threshold application between single output and reference value.For example, can from the single output in the original output (like, 8 bit test images), deduct reference value (like, 8 reference pictures), and which part what do not consider to be assigned with single output is.Reference value can comprise any suitable reference value; Like corresponding single output in the unit on, the single output that the tube core on the wafer different with the tube core that has wherein produced the single output that is deducted reference value is corresponding, the wafer different etc. with the unit (cell) that has wherein produced the single output that is deducted reference value.Can any single output with the difference that is higher than allocation threshold be identified as defective.In this way, can be according to the part that is assigned with single output, with different threshold test defectives.
In another embodiment, carry out the step that one or more defects detection parameter is assigned to different piece separately, make and use the single output that is assigned to different piece to detect defective with varying sensitivity.Therefore, embodiment described herein can through utilization learn the defective of paying close attention to (DOI) and noise/noise be in the different piece on how much and realize better defects detection.For example, the different geometric shape can show dissimilar defectives.In such embodiment, in the array pattern zone, original output can comprise the linear pattern that bright relatively single output and dark relatively single output replace.Under some such situations, DOI can be arranged in those parts that original output comprises bright relatively single output, and the noise defective can be arranged in those parts that original output comprises dark relatively single output.In this way; (one or more) characteristic of employing use qualification geometry (for example; The x or the y projection that divide footers in the array area) part, the susceptibility of detection algorithm can be created by different modes, so that the susceptibility in the array area is better and make the noise of self page-dividing sign littler.Therefore, embodiment described herein advantageously allows to adopt automated manner that the different geometrical patterns of wafer are divided into different piece.This partiting step makes it possible to handle by different way these zones and can reach better susceptibility.The different geometric shape is also with light scattering by different way.In this way, some geometries can cause original output to have many relatively noises, and other solids can cause original output to have few relatively noise.Yet, divide through the intensity of only using single output, can be grouped in together (for example, owing to the border qualification is unclear) with the regional corresponding single output that has many relatively noises and lack noise relatively in the original output.By contrast, in embodiment described herein, the defective for being arranged in the wafer area with one or more geometrical property corresponding with the less noise of original output can reach higher susceptibility.In addition, for the arrowband check system, because the pattern a large amount of light of scattering also, so defective usually can be by noise takeover.Yet embodiment described herein makes and can detect by those defectives of lack of proper care near the noise of pattern (detune).
Also comprise the single output that one or more defects detection parameter of distributing is applied to be assigned to different piece by computer implemented method, to detect the defective on the wafer thus.As stated, can adopt different inspection schemes, handle different piece by different way.In this way, the step that one or more defects detection parameter of distributing is applied to single output can comprise these parts of employing different schemes inspection, to detect the defective on the wafer thus.For example, the part that has been assigned with single output can be used for confirming threshold value that this threshold value will be applied to the difference between single output and the reference value.After having confirmed to be assigned with the part of single output and one or more defects detection parameter be assigned to different piece; Like what originally will normally carry out, one or more defects detection parameter of distribution can be applied to being assigned to the single output of different piece.
In one embodiment, in the stroke that the multiple-pass of wafer is checked, carry out and obtain the step of original output, and the original output of obtaining in another stroke for the multiple-pass inspection, do not carry out by computer implemented method.In this way, can only carry out partiting step as described herein to a stroke of multiple-pass inspection.The original output of in other strokes, obtaining can be used for other purposes.For example, the multiple-pass inspection can be used to divide purpose, and one of them stroke has the optimum signal and another stroke that are used for defective provides the division based on geometry.Particularly, can carry out the different stroke inspections in the multiple-pass inspection, make that original output and/or defects detection result are different for different strokes with one or more different defects detected parameters and/or one or more different optical parametric.In such embodiment; A kind of optical mode that is used for a stroke inspection of multiple-pass inspection can allow to divide, and the another kind of optical mode of check system that is used for another road inspection of multiple-pass inspection can provide the high sensitive to DOI.
In another embodiment, use the original output of obtaining in other strokes to detect additional defects, and said method comprise with said defective and additional defects combination, to produce the check result to wafer.For example, as described above, a stroke of multiple-pass inspection can be used for partiting step, and another stroke of multiple-pass inspection can be used for detecting DOI with optimum signal.Therefore, the different strokes of multiple-pass can detect dissimilar defectives.In this way, can make up the result of the different strokes of multiple-pass, to produce whole check result to wafer.After the defects detection of the original output that can in using all different strokes, produce has been performed, be combined and used in the detected defect result of obtaining in the different strokes of original output.Alternatively, can be combined and used in the defects detection result of the original output generation of obtaining in the different strokes by immediate mode, at the same time, during certain original output is still being obtained.
In other embodiment, said method comprises that one or more predetermined defects detection parameter is applied to original output to be made up to produce the check result to wafer with the additional defects on the detection wafer and with said defective and additional defects.For example, can from the original output single output of (like, 8 bit test images), deduct reference value (like, 8 reference pictures), and which part what do not consider to be assigned with single output is.Reference value can comprise any suitable reference value, like those above-mentioned reference values.In addition, be applied to single output and be applied to original output, can identical reference value be used to detect defective through one or more defects detection parameter that will be scheduled to through one or more defects detection parameter that will distribute.The result of subtraction can be an absolute difference.Then, can the direct difference threshold of being scheduled to be applied to absolute difference, and any single output that absolute difference is higher than threshold value can be identified as defective.In addition, can identical predetermined direct difference threshold be applied to absolute difference, and which part what do not consider to be assigned with single output is.Then, can with detected defective in this way be applied to single output and the combination of detected defective through one or more defects detection parameter that will distribute, with the final inspection result of generation to wafer.For example, can being directed against by any way, detected all defect produces the defective template individually.Can be from two error images (difference image) execution area " growth (grow) " all, and can produce the final template that is used for all defect.
Through detecting defective as stated by different way, can provide for a variety of reasons and possibly favourable defective detect again.For example, automatically 2D projection and provide sane (robust) defective to detect again and that defective is detected again is easy to use based on the division of geometry.In addition, partiting step described herein provides the dynamical fashion of mapping defective and reference picture.For example, if this part has noise, then can the demodulation difference.By contrast, if this part is cleaner, then can amplified differences.In addition, aforesaid double check has reduced the possibility of the fault warning that is caused by any detection method.
Said method can also comprise that the result with any step (one or more) of said method is stored in the storage medium.These results can comprise any result described herein and can adopt any way known in the art to store.For example, one or more that is assigned with the part of single output and/or is assigned to different piece detects defect parameters and can be used to generate data structure, and like, question blank, it is stored in the storage medium with the check system coupling.Storage medium can comprise any suitable storage medium known in the art.After store results, can be in storage medium access results, and the result that uses as described herein, with its format be presented in the user, supply another software module, method or system's use etc.In addition, store results can be " for good and all ", " semipermanent ground ", storage perhaps continues a certain period provisionally.For example, storage medium can be a random-access memory (ram), and these the possibility of result infinitely continue to remain in the storage medium to the time.Can also be like the U.S. Patent application No.12/234 that own of people such as Bhaskar in submission on September 19th, 2008; 201 (are disclosed as the open No.2009/0080759 of U.S. Patent application on March 26th, 2009; It is merged in way of reference, treats as at this paper and is set forth fully) described in ground carry out the step of store results.
Forward accompanying drawing now to, be noted that, these accompanying drawings needn't be drawn in proportion.Particularly, the ratio of some elements is exaggerated very much in the accompanying drawing, to stress the characteristic of element.Be noted that also these accompanying drawings are not drawn by same ratio.Use identical Reference numeral to be illustrated in and to have the element shown in the approximate more than one secondary accompanying drawing of constructing.
Another embodiment relates to a kind of computer-readable medium, and it is included in the executable program command that is used to realize detecting the method (that is, by computer implemented method) of the defective on the wafer on the computer system.In such embodiment shown in Fig. 1.For example, as shown in fig. 1, computer-readable medium 10 is included in the executable program command 12 that is used to realize the method for the defective on the above-mentioned detection wafer on the computer system 14.Can execution of program instructions can comprise any other step (one or more) in any other method (one or more) described herein by computer implemented method.
Can program command 12 that realize the method such as method described herein be stored on the computer-readable medium 10.Computer-readable medium can be a storage medium, as, read-only memory, RAM, disk or CD or tape or any other suitable computer-readable medium known in the art.
Can realize program command by any mode in the variety of way, except other, also comprise technology, based on the technology and/or the OO technology of assembly based on program.For example, as required, can use Matlab, Visual Basic, ActiveX control, C, C++ object, C#, JavaBeans, Microsoft Foundation Classes (" MFC ") or other technologies or method to realize program command.
Other embodiment relates to the system that detects the defective on the wafer that is configured.An embodiment in this system shown in Fig. 2.As shown in Figure 2, system 16 comprises inspection subsystem 18 and computer subsystem 20.The inspection subsystem is configured through the scanning wafer and comes to produce original output to wafer.For example, as shown in Figure 2, the inspection subsystem comprises light source 22, as, laser.Light source 22 is configured photoconduction to polarization components 24.In addition, the inspection subsystem can comprise a more than polarization components (not shown), and each polarization components can be separately located in the light path from light source.Each polarization components can be configured the polarisation of light that changes by different way from light source.The inspection subsystem can be configured: be chosen according to the sort of polarization setting and be used for the scan period irradiate wafer, with any suitable method, polarization components is moved into or be shifted out the light path from light source.The polarization setting that scan period is used for irradiate wafer can comprise p polarization (P), s polarization (S) or circular polarization (C).
The light that penetrates polarization components 24 is directed to wafer 26 with the oblique incidence angle, and said oblique incidence angle can comprise any suitable oblique incidence angle.The inspection subsystem can also comprise one or more optical module (not shown), said optical module be configured with light from light source 22 guiding polarization components 24 or with light from polarization components 24 guiding wafers 26.Optical module can comprise any suitable optical module known in the art, like (but being not limited to) anacamptics assembly.In addition, light source, polarization components and/or one or more optical module can be configured light with one or more incidence angle (for example, the incidence angle of oblique incidence angle and/or perpendicular) guiding wafer.The inspection subsystem can be configured through carrying out scanning step with any suitable method scan light above wafer.
In scan period, can be examined a plurality of passages collections and the detection of subsystem from the light of wafer 26 scatterings.For example, can be collected by lens 28 from the light of wafer 26 scatterings with subvertical relatively angle.Lens 28 can comprise refraction optical element as shown in Figure 2.In addition, lens 28 can comprise one or more refraction optical element and/or one or more reflective optical devices.The light of being collected by lens 28 can be directed to polarization components 30, and polarization components 30 can comprise any suitable polarization components known in the art.In addition, the inspection subsystem can comprise a more than polarization components (not shown), and each polarization components can independently be arranged in the path of the collected light of lens.Each polarization components can be configured and change the collected polarisation of light of lens by different way.The inspection subsystem can be configured: according to which kind of polarization setting is chosen and is used for scan period by detecting the collected light of lens 28, and with any suitable method, the path that polarization components is moved into or shifts out the collected light of lens.Be used for detecting by lens 28 collected polarisation of light settings and can comprise any polarization setting described herein (for example, P, S and unpolarized (N)) in scan period.
The light that penetrates polarization components 30 is directed to detector 32.Detector 32 can comprise any suitable detector known in the art, as, the imaging detector of charge-coupled device (CCD) or another type.Detector 32 is configured to produce original output, and said output is in response to being collected by lens 28 and by the scattered light of polarization components 30 (if being arranged in the path of collected light) transmission.Therefore, lens 28, polarization components 30 (if being arranged in the path of the collected light of lens 28) and detector 32 form a passage of inspection subsystems.This passage of inspection subsystem can comprise any other suitable optical module (not shown) known in the art, like the Fourier filtering unit.
Can be collected by lens 34 from the light of wafer 26 scatterings with different angles.Lens 34 can be configured as described above.The light of being collected by lens 34 can be directed to polarization components 36, and polarization components 36 can comprise any suitable polarization components known in the art.In addition, the inspection subsystem can comprise a more than polarization components (not shown), and each polarization components can independently be arranged in the path of the collected light of lens.Each polarization components can be configured to change by different way the collected polarisation of light of lens.The inspection subsystem can be configured to be chosen according to which kind of polarization setting and be used for detecting the collected light of lens 34 in scan period, the path that polarization components is moved into or shifts out the collected light of lens.Be used for detecting lens 34 collected polarisation of light settings and can comprise P, S or N in scan period.
The light that penetrates polarization components 36 is directed to detector 38, and detector 38 can be configured as described above.Detector 38 also is configured to produce output, and said output is in response to the scattered light that is collected that passes polarization components 36 (if being arranged in the path of scattered light).Therefore, lens 34, polarization components 36 (if being arranged in the path of the collected light of lens 34) and detector 38 can form another passage of inspection subsystem.This passage also can comprise any other above-mentioned optical module (not shown).In some embodiments, lens 34 can be configured to collect with about 20 and spend the light of the polar angle of extremely about 70 degree from the wafer scattering.In addition, lens 34 can be constructed to anacamptics assembly (not shown), and said anacamptics assembly is configured to collect the light from the wafer scattering with the azimuth of about 360 degree.
Inspection subsystem shown in Fig. 2 can also comprise one or more other passage (not shown).For example, the inspection subsystem can comprise additional channels as wing passage, and this additional channels can comprise any optical module described herein, like lens, one or more polarization components and detector.Said lens, one or more polarization components and detector can also such as this paper description be configured.In a kind of such embodiment; Wing passage can be configured to collect and detect the light (for example, wing passage can comprise lens that are centered close in the plane that is basically perpendicular to the plane of incidence and the detector that is configured to detect the collected light of lens) that scatters from the plane of incidence.
If the inspection to wafer comprises a more than stroke, then between stroke, the value of any optical parametric (one or more) of inspection subsystem can be changed by any suitable method as required.For example, in order to change the irradiation polarization state between the stroke, can remove polarization components 24 and/or with different polarization components such as this paper replace polarization components 24 with being described.In another embodiment, in order to change the illumination angle between the stroke, can be with any suitable method, between stroke, change light source and/or be used for the position of photoconduction to any other optical module (for example, polarization components 24) of wafer.
Computer subsystem 20 is configured and obtains the original output that the inspection subsystem produces.Can be provided to computer subsystem 20 in scan period by the original output that detector produces.Particularly; Computer subsystem (for example can be coupled to each detector; Through one or more transmission medium shown in dotted lines in Figure 2; Said transmission medium can comprise any suitable transmission medium known in the art), make computer subsystem can receive the original output that detector produces.Computer subsystem can be coupled to each detector in any suitable manner.The original output that during the scanning wafer, is produced by detector can comprise any original output described herein.
Computer subsystem is configured one or more characteristic of coming according to the corresponding original output of one or more geometrical property of the patterned features that forms on any embodiment identification described herein and the wafer.One or more characteristic of original output can comprise any such characteristic described herein.One or more geometrical property can also comprise any such characteristic described herein.Patterned features can comprise any patterned features described herein.
In addition; Computer subsystem is configured one or more characteristic of coming based on the original output that identifies each output in the original output is assigned to different piece, make with different piece in one or more geometrical property of the corresponding patterned features of each several part different.Computer subsystem can be configured according to any embodiment described herein single output to be assigned to different piece.Single output can comprise any single output described herein.Different piece can such as this paper description ground construct.One or more characteristic of the original output that identifies can comprise any such characteristic described herein.
Computer subsystem also is configured according to any embodiment described herein one or more defects detection parameter to be assigned to different piece separately.This one or more defects detection parameter can comprise any defects detection parameter described herein.Computer subsystem also is configured the single output that one or more defects detection parameter that will distribute is applied to be assigned to different piece, and to detect the defective on the wafer thus, this can carry out according to any embodiment described herein.One or more defects detection parameter of distributing can comprise any such parameter described herein.
Computer subsystem can be configured any other step (one or more) of carrying out any method embodiment described herein (one or more).Computer subsystem, inspection subsystem and system can be further as this paper description construct.
Be noted that Fig. 2 that this paper provides always illustrates a structure of the inspection subsystem that can comprise in the system implementation plan described herein.Significantly, when designer is used check system, can change inspection subsystem structure described herein, will check the best performanceization of subsystem when normally carrying out.In addition; Can use existing check system (for example, through adding function described herein) to realize system described herein like the instrument that the KLA-Tencor of the seedling Bi Dasi from California is purchased Puma 90 xx, 91xx and the 93xx series of acquisition to existing check system.For some such systems, method described herein can be provided as the optional function of system (for example, the function except other functions of system).Alternatively, system described herein can be designed to " (from scratch) starts anew " so that brand-new system to be provided.
Describe based on this, the other modification of the various aspects of the present invention and alternative embodiment can be clearly for a person skilled in the art.For example, the system and method that is used to detect the defective on the wafer is provided.Therefore, this description will be understood that to be illustrative and its purpose is to instruct those skilled in the art to realize general mode of the present invention.Be appreciated that the form of the present invention that this paper illustrates and describes will be taken as present embodiment preferred.Element and material can substitute element and the material that this paper is shown and describe; Parts and technology can be put upside down; And can utilize some characteristic of the present invention separately, those skilled in the art benefits from after this description of the present invention, and all these will be conspicuous.Can under the situation that does not break away from the spirit and scope of the present invention of describing like following claims, key element described herein be changed.
Claims (19)
1. computer implemented method, said method is used for detecting the defective on the wafer, and said method comprises:
Obtain the original output that produces to wafer by check system;
One or more characteristic of the corresponding said original output of one or more geometrical property of the patterned features that forms on identification and the said wafer;
One or more characteristic based on the said original output that identifies; Single output in the said original output is assigned to different piece, make with said different piece in one or more geometrical property of the corresponding said patterned features of each several part be different;
One or more defects detection parameter is assigned to said different piece separately; And
Said one or more defects detection parameter of distributing is applied to be assigned to the said single output of said different piece, detects the defective on the said wafer thus.
2. method according to claim 1, wherein, said original output is in response to the light from said wafer scattering.
3. method according to claim 1, wherein, one or more characteristic of the said original output that identifies comprises in the said original output along each projection of going.
4. method according to claim 1, wherein, one or more geometrical property of said patterned features comprises mathematical computations or their certain combination of the geometry of edge, shape, texture, the said patterned features of qualification.
5. how method according to claim 1 wherein, will influence one or more characteristic of said original output based on the layout of said patterned features, carry out the step of said identification.
6. method according to claim 1 wherein, when carrying out the said step of obtaining, is carried out the step of said identification.
7. method according to claim 1 wherein, is automatically carried out the step of said identification and the step of the said single output of said distribution, and need not user's input.
8. method according to claim 1 wherein, under the situation of not considering the design data relevant with said patterned features, is carried out the step of the said single output of said distribution.
9. method according to claim 1 wherein, under the situation of the intensity of not considering said single output, is carried out the step of the said single output of said distribution.
10. method according to claim 1, wherein, the step of the said single output of said distribution comprises one or more characteristic of the said original output that analysis identifies and threshold application is arrived said single output.
11. method according to claim 1; Wherein, Comprise one or more geometrical property of branch footers with in the said different piece one corresponding said one or more geometrical property of part; And wherein, with said different piece in corresponding said one or more geometrical property of another part comprise one or more geometrical property of array area.
12. method according to claim 1, wherein, one or more characteristic of the said original output corresponding with one or more geometrical property of some said patterned features can not suppress through Fourier filtering.
13. method according to claim 1, wherein, said one or more defects detection parameters comprise threshold value, and said threshold value will be applied to the difference between said single output and the reference value.
14. method according to claim 1 wherein, is carried out the said step that said one or more defects detection parameter is distributed separately, makes and uses the said single output that is assigned to said different piece to detect defective with varying sensitivity.
15. method according to claim 1; Wherein, in the one stroke that the multiple-pass of said wafer is checked, carry out the said step of obtaining, and wherein; The original output of obtaining in another stroke to said multiple-pass inspection is not carried out said by computer implemented method.
16. method according to claim 1 wherein, is carried out the said step of obtaining in the one stroke that the multiple-pass of said wafer is checked; Wherein, the original output of obtaining in another stroke to said multiple-pass inspection is not carried out said by computer implemented method; Wherein, Use the said original output of obtaining in other strokes to detect additional defects, and wherein, said method also comprises said defective and the combination of said additional defects to produce the check result to said wafer.
17. method according to claim 1; Also comprise: one or more defects detection parameter that will be scheduled to is applied to said original output detecting the additional defects on the said wafer, and with said defective and the combination of said additional defects to produce check result to said wafer.
18. a computer-readable medium, said computer-readable medium are included in the executable program command that is used to realize detecting the method for the defective on the wafer on the computer system, wherein, said method comprises:
Obtain the original output that produces to wafer by check system;
One or more characteristic of the corresponding original output of one or more geometrical property of the patterned features that forms on identification and the said wafer;
One or more characteristic based on the said original output that identifies; Single output in the said original output is assigned to different piece, make with said different piece in one or more geometrical property of the corresponding said patterned features of each several part be different;
One or more defects detection parameter is assigned to said different piece separately; And
Said one or more defects detection parameter of distributing is applied to be assigned to the said single output of said different piece, detects the defective on the said wafer thus.
19. a system, said system is configured the defective that detects on the wafer, and said system comprises:
Inspection subsystem, said inspection subsystem are configured through scanning said wafer and produce original output to wafer; And
Computer subsystem, said computer subsystem are configured:
Obtain said original output;
One or more characteristic of the corresponding said original output of one or more geometrical property of the patterned features that forms on identification and the said wafer;
One or more characteristic based on the said original output that identifies; Single output in the said original output is assigned to different piece, make with said different piece in one or more geometrical property of the corresponding said patterned features of each several part be different;
One or more defects detection parameter is assigned to said different piece separately; And
Said one or more defects detection parameter of distributing is applied to be assigned to the said single output of said different piece, detects the defective on the said wafer thus.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15247709P | 2009-02-13 | 2009-02-13 | |
| US61/152,477 | 2009-02-13 | ||
| PCT/US2010/023802 WO2010093733A2 (en) | 2009-02-13 | 2010-02-10 | Detecting defects on a wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102396058A true CN102396058A (en) | 2012-03-28 |
| CN102396058B CN102396058B (en) | 2014-08-20 |
Family
ID=42562263
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201080016422.8A Active CN102396058B (en) | 2009-02-13 | 2010-02-10 | Detecting defects on a wafer |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP2396815A4 (en) |
| JP (1) | JP5570530B2 (en) |
| KR (1) | KR101674698B1 (en) |
| CN (1) | CN102396058B (en) |
| IL (1) | IL214488A (en) |
| SG (1) | SG173586A1 (en) |
| WO (1) | WO2010093733A2 (en) |
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- 2010-02-10 KR KR1020117021145A patent/KR101674698B1/en active IP Right Grant
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| CN108475422B (en) * | 2015-08-12 | 2019-09-06 | 科磊股份有限公司 | The position of defect is determined in electron beam image |
| CN108475422A (en) * | 2015-08-12 | 2018-08-31 | 科磊股份有限公司 | The position of defect is determined in electron beam image |
| CN105699396A (en) * | 2016-03-29 | 2016-06-22 | 同高先进制造科技（太仓）有限公司 | Pollution detection device and method of welding laser head protective glasses based on light scanning |
| CN111052331A (en) * | 2017-08-30 | 2020-04-21 | 科磊股份有限公司 | Identifying disturbances and defects of interest in defects detected on a wafer |
| CN113677980A (en) * | 2019-04-10 | 2021-11-19 | 科磊股份有限公司 | Defect candidate generation for inspection |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2012518278A (en) | 2012-08-09 |
| IL214488A (en) | 2016-04-21 |
| KR20110124303A (en) | 2011-11-16 |
| IL214488A0 (en) | 2011-09-27 |
| EP2396815A2 (en) | 2011-12-21 |
| JP5570530B2 (en) | 2014-08-13 |
| WO2010093733A2 (en) | 2010-08-19 |
| WO2010093733A3 (en) | 2010-10-28 |
| KR101674698B1 (en) | 2016-11-09 |
| SG173586A1 (en) | 2011-09-29 |
| CN102396058B (en) | 2014-08-20 |
| EP2396815A4 (en) | 2012-11-28 |
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