CN102346369B - Nanoimprint lithography machine for whole wafer - Google Patents
Nanoimprint lithography machine for whole wafer Download PDFInfo
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- CN102346369B CN102346369B CN 201110266251 CN201110266251A CN102346369B CN 102346369 B CN102346369 B CN 102346369B CN 201110266251 CN201110266251 CN 201110266251 CN 201110266251 A CN201110266251 A CN 201110266251A CN 102346369 B CN102346369 B CN 102346369B
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Abstract
The invention discloses a nanoimprint lithography machine for a whole wafer. The nanoimprint lithography machine comprises a lithography head, an exposure system, a mold plate, a wafer bearing platform, demolding nozzles, a rack, a marble base, a vacuum pipeline and a pressure pipeline, wherein the mold plate is fixed on the lithography head, the wafer bearing platform is arranged below the mold plate exactly and fixed on the marble base, the demolding nozzles are arranged around the wafer bearing platform, an ultraviolet light source of the exposure system is arranged in the lithography head, the vacuum pipeline and the pressure pipeline are both connected with the lithography head, and the vacuum pipeline is also connected with the wafer bearing platform. The invention also provides a method for carrying out nanoimprint lithography on the whole wafer by using the nanoimprint lithography machine. The nanoimprint lithography machine for the whole wafer has the advantages of simple structure, wide adaptability, convenience in operation, low manufacturing cost, high reliability and the like, can be applied to LED (light emitting diode) patterning and the manufacture of microlenses and microfluid devices, especially suitable for the low-cost and large-scale manufacture of a photonic crystal LED.
Description
Technical field
The present invention relates to a kind of nanometer stamping and photoetching machine, relate in particular to a kind of single step Full wafer photo nanoimprint lithography machine, belong to minute manufacturing and technical field of lithography.
Background technology
Nano-imprint lithography (Nanoimprint Lithography, NIL) is a kind of brand-new micro-nano patterned method, and it is that a kind of stress deformation that uses mould to pass through resist is realized its patterned technology.Compare with other micro-nano manufacture method, NIL has high resolution, Ultra Low Cost (NIL of the equal production technique of internal authority organization evaluation is than the low at least order of magnitude of traditional optical projection lithography) and large-duty characteristics, especially has outstanding advantage in large area micro-nano rice structure and complex three-dimensional micro nano structure manufacture view.Along with the widespread use of nano-imprint lithography in fields such as high brightness photon crystal LED, compact disk medium (HDD), optical component (optical waveguide, micro optical lens, grating), micro-fluidic devices, demand for large tracts of land, the whole audience, Integral wafer nano-imprinting technology and device is more and more urgent, and is also more and more high for the requirement of impression area, replica precision simultaneously.The method that realizes at present the large-area nano impression mainly contains three kinds: the first is to adopt stepping to repeat nano-imprint process (Step-and-repeat NIL); The second is to adopt roll extrusion seal technique (Roll NIL); The third is to adopt the single step Integral wafer nano-imprinting.Compare with employing stepping repetition nano-imprint process and roll extrusion seal technique realization large-area graphs method, adopt full wafer wafer (wafer yardstick, wafer scale) nano impression (Full wafer NIL, Wafer-level NIL, Wafer scale NIL) have that high productivity, cost are low, the equal significant advantage such as even high conformity of figure, and the advantage that is fit to various soft hard substrate.But compare with existing nano-imprint process method, there is following challenge technical barrier at present in Integral wafer nano-imprinting: (1) large tracts of land applies the force of impression of uniformity.The force of impression skewness causes mould can't fully contact with substrate on the one hand, affects replica precision and quality, even causes figure to shift unsuccessfully, and for template or the substrate of hard brittle material, the inhomogeneous of force of impression very easily causes it cracked on the other hand.Wafer size is from early stage 4inch and 6inch, develop into 8inch, until current and 12inch (300 millimeters), and following 18inch (450 millimeters), along with the increase of wafer size, mean that the cost of manufacture of per unit area reduces, the lifting of overall production capacity.But along with the continuous increase of wafer size, for nano-imprint process, how obtain the more difficult that the force of impression of uniformity becomes at large-area wafer.Requirement for wafer-supporting platform and eindruckwerk performance is more and more higher; (2) reduce force of impression.Contact in order to realize that mould and full wafer wafer are abundant, inhomogeneity, quick, the complete micro-nano cavity body structure of filling mould of liquid resist, repeating nano-imprint process with stepping compares with the small size imprint process, the force of impression that full wafer wafer impression need to more arrive, large force of impression will cause mould to produce distortion, particularly serious for its distortion of soft mold, this will cause the replica precision reduction, have defective, even graph copying failure; (3) bubble is eliminated.Eliminate bubble is the very stubborn problem that nano-imprint process faces always, and there is defective in the figure that the existence of bubble will cause copying, has a strong impact on the quality of making figure.Seal very easily produces bubble in the large tracts of land pressure process, but is very difficult to solve yet eliminate bubble; (4) demoulding difficulty.Increase along with the contact area of mould and substrate, comprising mould micro-nano structure feature on the one hand increases greatly, mould and resist sticking problem become and become increasingly conspicuous on the other hand, what cause need to very large knockout press could realizing mould and wafer separates the easy mold damage of large knockout press and the figure that copies; In addition, if knockout press is excessive, then the particle that solidifies resist may be sticked to die surface, and may cause the destruction of die surface micro-nano structure, be i.e. impressing mould " pollution "; (5) whole imprinting area obtains uniformity and thin residual layer.Figure on the resist need to be transferred on the wafer (substrate), at imprinting area acquisition uniformity and the thin residual layer of full wafer wafer, for realizing that high-quality figure shifts the conclusive effect of playing.In addition, the impression for the III-V family material such as LED and substrate also faces a following difficult problem: (1) wafer out-of-flatness, and the surface warp distortion, and have the protrusion of surface of several micron-scales.For example tens of the LED epitaxial wafer microns warpage is the inconsistent result of backing material expansion coefficient, and such as silit or sapphire and epitaxially grown semiconductor material, such as gallium nitride, its growth temperature is higher than 900 ℃.In fact this two layers of material as bimetallic strip, can form the warpage structure of similar potato chips.Thermal stress has also hindered uses larger sized wafer.Protrusion of surface is epitaxially grown secondary product, if the lattice of substrate and semiconductor material can not mate fully, will produce projection; (2) the wafer face is not to clean very much, and dirt (this is totally unfavorable for mould) may be arranged, and causes impressing mould by " pollution "; (3) in highlighted LED produces, in order to save the epitaxially grown cost of MOCVD, following development trend is to use large-sized substrate, for example 4 cun or 6 cun wafers, even following 12 cun or 18 cun.Yet the bending that the epitaxial growth meeting causes large-sized substrates then all the more obviously, in follow-up photoetching process, utilize by force the mode such as vacuum suction to compensate this bending and might cause substrate cracking with the high resolving power that exchanges in the photoetching.Therefore, the exploitation of large scale wafer full wafer nanometer technology and equipment faces many technical difficult problems, does not also have a kind of comparatively desirable solution at present.
The inventor has applied for " apparatus and method of Integral wafer nano-imprinting " (application number: 201010600735.X in 2010, publication number 102096315A), the ultimate principle of the method is: introduce the transparent soft mold of a kind of three-layer composite structure (take low-adhesion material remodeling PDMS as matrix), moulding process adopts from mould (template) center to two side directions the gradually method of homogeneity Microcontact printing, based on new mould structure and adopt under the auxiliary force of impression of gas and the capillary force acting in conjunction, realize that force of impression evenly distributes, eliminate air blister defect, and under little force of impression, realize copy (precision and the quality that guarantee complex) of figure.Knockout course employing mould is continuous " opening " formula releasing process from wafer (substrate) two side direction centers, under the acting in conjunction of pull of vacuum and horizontal force, adopt small knockout press can realize that (avoiding on the one hand large tracts of land to contact the simultaneously demoulding needs larger knockout press, causes mould and copy pattern injury in the large tracts of land demoulding; Avoid on the other hand the one-sided open-type demoulding, because die deformation causes greatly short defective in serviceable life).Moulding process and knockout course be all take template center as axis of symmetry, template evenly, symmetrical stressed, impression and knockout course both sides are carried out the quality of complex (greatly boost productivity with) simultaneously.Its basic process as shown in Figure 1.Specifically comprise following main technological steps: (1) preprocessing process.Be fixed on the worktable being coated with the full wafer wafer that is covered with resist, after imprint head and wafer aligned, eindruckwerk descended, until the support regulating block of imprint head contacts with wafer work platform (wafer-supporting platform).The closing presure pipeline is opened vacuum line, and mould is adsorbed on the imprint head work top (being that the supporting layer of mould is adsorbed in the groove in the imprint head work top specifically).(2) moulding process.At first, from the template center position, initial vacuum state is converted to pressure state, under the auxiliary force of impression of gas and capillary force acting in conjunction, the elastic layer of soft mold vertically produces flexural deformation in the center, the part begins to contact the resist on the substrate, and the micro nano structure cavity of mold center position begins the filling by resist institute, shown in Fig. 1 (a); Subsequently, one by one vacuum state is converted to pressure state from the mold center position to two side directions, the contact area of mould structure layer and resist constantly enlarges, until whole mould structure layer contacts fully with resist on the full wafer wafer, all micro nano structure cavitys in the mould are by the filling of resist institute, shown in Fig. 1 (b) and 1 (c); At last, the pressure of all pressure channels keeps uniformity consistency to increase, and realizes the complete filling of liquid anticorrosive additive material in mould micro nano structure cavity, and is thinned to predetermined residual layer thickness.(3) solidification process.Open ultraviolet source, ultraviolet light sees through mould resist is exposed, and fully solidifies liquid resist, shown in Fig. 1 (d).(4) knockout course.At first, from wafer outermost both sides, the closing presure pipeline is opened vacuum line, opens simultaneously the nozzle that the demoulding is used.Produce under the horizontal force acting in conjunction at pull of vacuum and nozzle pressurized air, begin mould and wafer is separated from each other from outermost, shown in Fig. 1 (e); Subsequently, two side direction mold center convert back vacuum state with pressure one by one from wafer, realize mould continuously demoulding of " opening " formula from center, wafer lateral, and knockout press is making a concerted effort of pull of vacuum and horizontal force, shown in Fig. 1 (f); At last, mold center position and wafer are separated, and the realization mould separates fully with wafer, finishes the demoulding, shown in Fig. 1 (g).
Summary of the invention
For above-mentioned prior art, the invention provides a kind of Full wafer photo nanoimprint lithography machine.
The present invention is achieved by the following technical solutions:
A kind of Full wafer photo nanoimprint lithography machine, it comprises: imprint head, exposure system, template, wafer-supporting platform, demolding nozzle, frame, marble base, vacuum line and pressure piping, wherein, described template is fixed on the imprint head, wafer-supporting platform places under template vertical, and be fixed on the marble base, the wafer-supporting platform periphery is provided with demolding nozzle; The ultraviolet source of exposure system places imprint head exposure operating room, and is positioned at the top of shuttering work platform; Vacuum line links to each other with the air admission hole of pressure piping with the directional control valve of imprint head shuttering work platform two sides; Vacuum line respectively with wafer-supporting platform on vacuum cup and the directional control valve air admission hole of fixed pedestal link to each other; The marble base plays the effect of damping and vibration isolation in order to securing supports and/or wafer-supporting platform to whole system.
The structure of described imprint head is: comprise shuttering work platform, exposure operating room, ring flange, ball-screw, shaft coupling, servomotor, guide frame, guide pole and three supporting regulating blocks, wherein, the exposure operating room links to each other by screw with the shuttering work platform, shuttering work platform inside is provided with horizontal pipeline and vertical duct, realizes pressurized air and the even distribution of vacuum gas on template; The shuttering work platform operating room's ultraviolet light that should allow to expose sees through, and continues to see through the template that connects its bottom, realizes on-chip resist after graphical is exposed and solidifies; The exposure operating room is connected by ring flange with ball-screw, the even distributing installation ultraviolet source of inner top (UV LED lamp) of exposure operating room, and upper path channels and the control module of connecting of ultraviolet source (UV LED lamp) forms exposure system; Shaft coupling is installed on the ball-screw, and servomotor is installed on the shaft coupling, and guide frame is installed in frame lower, and guide pole is installed in the guide frame bottom; Servomotor, shaft coupling, ball-screw, guide frame and guide pole consist of the motor function assembly, realize that shuttering work platform and exposure operating room are along up and down vertical movement of Z-direction; 3 supporting regulating blocks place the bottom of shuttering work platform, mutually are 120 degree angles and evenly distribute, and the supporting regulating block is used for the impression distance of adjusting template and substrate; Shuttering work platform two sides are provided with air admission hole A, air admission hole B, air admission hole C.
The internal duct structure of shuttering work platform is in the described imprint head: comprise shuttering work platform bottom surface, shuttering work platform bottom surface is provided with shuttering work platform groove surface and horizontal pipeline, shuttering work platform groove surface is provided with vertical duct, one end of vertical duct communicates with shuttering work platform groove surface, and the other end communicates with horizontal pipeline; Vertical duct and horizontal pipeline are through hole.The shape of shuttering work platform groove surface is consistent with supporting layer in the template, and size increases 2mm than it all around, and supporting layer is embedded in the shuttering work platform groove surface during template initial position.
The exterior line structure of shuttering work platform is in the described imprint head: comprise directional control valve A, plug, connecting line and directional control valve B, wherein, the end of directional control valve B connects the air admission hole A of template worktable, other end plug shutoff; Directional control valve A connects respectively air admission hole B and air admission hole C, and the other end of air admission hole B and air admission hole C uses the plug shutoff; Connecting line realizes that vacuum line, pressure piping, directional control valve A, directional control valve B, air admission hole A, air admission hole B be connected connection with air admission hole C.
The structure of described wafer-supporting platform is: comprise fixed pedestal, unsteady base, vacuum cup and vacuum line, wherein, unsteady base is positioned on the fixed pedestal, and vacuum cup is fixed in the upper plane of the base that floats by screw; Fixed pedestal has the spill spherical structure, and unsteady base has the convex spherical structure, contacts cooperation for semisphere between fixed pedestal and the unsteady base; By between fixed pedestal and the unsteady base for spherical contact to cooperate realize template and the adjustment of substrate parallel self-adaptation and wedge shape compensation of error; Be provided with horizontal pipeline in the fixed pedestal, vacuum line is provided with operation valve air admission hole I and operation valve air admission hole II, and vacuum cup is provided with horizontal air intake opening; Horizontal pipeline links to each other with operation valve air admission hole I, and horizontal air intake opening links to each other with operation valve air admission hole II.
In the structure of described wafer-supporting platform, also be provided with vertical duct in the fixed pedestal, fixed pedestal central authorities are provided with central circular through hole; Be provided with interior manhole in the fixed pedestal, interior manhole communicates with central circular through hole, horizontal pipeline and vertical duct respectively; Vertical duct topmost communicates with the spill spherical structure, vertical duct communicates with manhole bottom, horizontal pipeline links to each other with operation valve air admission hole I, by opening the operation valve air admission hole I that links to each other with horizontal pipeline in the fixed pedestal, under the effect of negative pressure of vacuum, being parallel to each other between the template and substrate in moulding process guaranteed in the locking of base on fixed pedestal and fixing that realizes floating after the leveling, and keep relative pose between leveling meron and the template; Horizontal air intake opening in the vacuum cup links to each other with operation valve air admission hole II, by opening the operation valve air admission hole II that links to each other with horizontal air intake opening in the vacuum cup, the gas pressure intensity that vacuum cup produces between up and down two planes of substrate is poor, realizes under suction function the clamping of substrate and fixing.
Described vacuum cup is boss structure or plane integrative-structure.
The structure of described template is: comprise three layers, orlop is structural sheet, and the middle layer is elastic layer, and the superiors are supporting layer, and described structural sheet is provided with the micro nano structure figure that will make, and elastic layer is positioned on the structural sheet, and supporting layer is positioned on the elastic layer; The thickness range of structural sheet is the 100-200 micron; The thickness range of elastic layer is the 400-700 micron; The thickness range of supporting layer is the 100-200 micron; Structural sheet, elastic layer and support layer material are PDMS, but its hardness is different, and the material of structural sheet and supporting layer is hard PDMS (dimethyl silicone polymer), i.e. h-PDMS, its hardness be elastic layer use PDMS hardness 3-5 doubly; Elastic layer is selected has the soft PDMS material of good buckling deformation performance, and its Young modulus is 5N/mm, i.e. s-PDMS; Structural sheet is consistent with the supporting layer size, and elastic layer is than structural sheet and the large 60-150 millimeter of supporting layer size.
The structure of described vacuum line is: comprise vacuum pump or vacuum generator, directional control valve, pressure control valve and connecting line.The vacuum tightness working range is:＜-0.9bar, the vacuum tightness of impression and knockout course use is-5kPa～-100kPa; Vacuum line links to each other with the air admission hole of the directional control valve of the shuttering work platform of the vacuum cup that is connected wafer-supporting platform inside, fixed pedestal and imprint head inside respectively, realize the fixing of substrate, the locking of base and fixing of floating after the leveling, and the power source the when demoulding is provided.
The structure of described pressure piping is: comprise air compressor, gas storage bag, directional control valve, pressure control valve and connecting line.The working range of right compression conduit is: 0-5bar; Working pressure in the moulding process is 10-400mbar; Pressure piping links to each other the power source when impression is provided with the air admission hole of the shuttering work platform directional control valve that is connected imprint head inside.
Utilize above-mentioned wafer nanometer stamping and photoetching machine to carry out the method for Integral wafer nano-imprinting photoetching, step is as follows:
(1) nanometer stamping and photoetching machine working state of system initialization procedure: will be coated with on the vacuum cup that the substrate that is covered with resist places wafer-supporting platform, and open the vacuum line of vacuum cup, substrate is fixed on the vacuum cup; Close the pressure piping of impression head mould plate worktable, open vacuum line, the template elastic layer is adsorbed on imprint head shuttering work platform bottom surface, and the shuttering supporting layer is adsorbed in the groove surface of shuttering work platform bottom surface;
(2) leveling process: at first, servomotor drives the imprint head assembly by ball-screw and moves downward fast, contacts with vacuum cup or unsteady base on the wafer-supporting platform until be fixed in the support regulating block of shuttering work platform; Subsequently, reduce the speed that presses down of imprint head, imprint head continues to move downward, under the effect of imprint head downforce, contact with sphere between the unsteady base to cooperate by the wafer-supporting platform fixed pedestal and produce the template that relative sliding realizes being fixed on the imprint head and adjust and the wedge shape compensation of error with the substrate parallel self-adaptation that is fixed on the wafer-supporting platform; At last, after the complete leveling of template and substrate, open the vacuum line on the fixed pedestal on the wafer-supporting platform, under the negative pressure of vacuum effect, realize to float base on fixed pedestal locking (clampings) and fix, keep the relative pose between leveling meron and the template, guarantee in whole impression, curing and knockout course keeping parallelism between the template and substrate;
(3) moulding process: at first, from shuttering work platform center, initial vacuum state is converted to pressure state, under the auxiliary force of impression of gas and capillary force acting in conjunction, the elastic layer of template (soft mold) vertically produces flexural deformation in the center, the part begins to contact on-chip resist, and the micro nano structure cavity of mold center position begins the filling by resist institute; Subsequently, one by one vacuum state is converted to pressure state from the template center position to two side directions, the contact area of formwork structure layer and resist constantly enlarges, until whole formwork structure layer contacts fully with resist on the full wafer wafer, all the micro nano structure cavitys in the template are by the filling of resist institute; At last, the pressure of all pressure channels keeps uniformity consistency to increase, and realizes the complete filling of liquid anticorrosive additive material in mould micro nano structure cavity, and is thinned to predetermined residual layer thickness;
(4) solidification process: open the ultraviolet source of exposure operating room, ultraviolet light sees through mould resist is exposed, and fully solidifies liquid resist, 5-20s set time (full wafer wafer);
(5) knockout course: at first, from shuttering work platform outermost both sides, the closing presure pipeline, open vacuum line, open simultaneously the nozzle that the demoulding is used, produce under the horizontal force acting in conjunction at pull of vacuum and nozzle pressurized air, begin template and on-chip resist is separated from each other from outermost; Subsequently, two side direction template center convert back vacuum state with pressure one by one from substrate, realize mould continuously demoulding of " opening " formula from center, wafer lateral, and knockout press is making a concerted effort of pull of vacuum and horizontal force; At last, template center position and substrate are separated, and the realization template is separated fully with substrate, finishes the demoulding;
(6) imprint head resets: servomotor drives imprint head by ball-screw and moves upward fast, turns back to system's initial position;
(7) wafer-supporting platform resets: at first, close the vacuum line on the wafer-supporting platform vacuum cup, take off the substrate after the complex, subsequently, close the vacuum line of wafer-supporting platform fixed pedestal, make the base that floats be in free state at fixed pedestal.
Compare with existing nanometer stamping and photoetching machine, the present invention has following significant advantage:
(1) simple in structure, easy to operate, cost is low.
(2) high productivity, wide adaptability, flexible, the degree of modularity is high, is easy to the expansion of wafer size.
(3) do not rely on balance that precision optical machinery applies, evenly, with the force of impression of Surface Vertical, simplified device structure.
(4) adopt passive self-adaptation wafer-supporting platform to realize leveling and wedge shape error compensation, regulate fast, simple to operate, good for the adaptability of large scale wafer.
(5) moulding process adopts from the template center position to the two side directions strategy of homogeneity contact gradually, characteristics and significant advantage that it is outstanding: 1. by template and substrate gradually, homogeneity is little contacts, reduce on the one hand force of impression, avoid traditional full wafer wafer impression to need large force of impression, cause soft template to produce larger distortion, affect precision and the quality of replica; Can adapt on the other hand the imprint process requirement that the large tracts of land substrate has the surface irregularity degree.2. eliminated full wafer wafer impression " bubble " defective, " bubble " that moulding process produces can in time be got rid of.
(6) by under the auxiliary force of impression of gas and the capillary force acting in conjunction, realize copying of figure, its force of impression is that gas is assisted making a concerted effort of force of impression and capillary force, outstanding characteristics and significant advantage: be easy to 1. realize that template contacts with the completeness of wafer; 2. can guarantee at large tracts of land full wafer wafer the pressure of uniformity; 3. can adopt less force of impression, avoid the distortion of soft mold, improve quality and the precision of complex.
(7) knockout course adopt template from wafer two side direction centers continuous " opening " formula releasing process.Outstanding characteristics and significant advantage: 1. traditional release method, directly large tracts of land template and full wafer wafer are separated from each other, need on the one hand very large knockout press, very easily cause on the other hand template and the damage and failure of the figure that copies.The releasing process knockout press that the present invention uses is little, and is little for the damage of mould, can improve the mold use life-span, and the destruction for the figure that copies also can be reduced to minimum simultaneously; 2. knockout press is symmetrical in the knockout course, and whole knockout course knockout press keeps evenly.Relatively and other releasing process (mould is from the other side of wafer one side direction, the perhaps simultaneously demoulding of full wafer wafer), the present invention from wafer two side direction centers continuously " opening " formula releasing process can guarantee template center (position of area maximum) finally demould, although template and substrate contact area at this moment is maximum, but the demoulding has all been finished in both sides, under the acting in conjunction of both sides (pull of vacuum and horizontal force), be easy to the demoulding.
(8) by under pull of vacuum and horizontal force (nozzle) acting in conjunction, realize template continuously demoulding of " opening " formula from center, wafer lateral, its knockout press is making a concerted effort of pull of vacuum and horizontal force." open " continuously the demoulding of formula and avoided on the one hand large knockout press, avoid on the other hand knockout course to the damage of template and copy pattern.
(9) moulding process and knockout course are take template center as axis of symmetry, and template is even, symmetrical stressed, and carry out simultaneously impression and knockout course both sides, and production efficiency is high.
The present invention has realized the manufacturing of the low cost of Integral wafer nano-imprinting, efficient, high precision and scale; the present invention is suitable for the manufacturing of compact disk (HDD), micro-optical device, microfluidic device etc., especially is fit to the full wafer wafer impression (comprising the exiting surface table graphically and substrate graph) of photonic crystal LED.
Description of drawings
Fig. 1 a is Integral wafer nano-imprinting principle of work schematic diagram.
Fig. 1 b is Integral wafer nano-imprinting principle of work schematic diagram.
Fig. 1 c is Integral wafer nano-imprinting principle of work schematic diagram.
Fig. 1 d is Integral wafer nano-imprinting principle of work schematic diagram.
Fig. 1 e is Integral wafer nano-imprinting principle of work schematic diagram.
Fig. 1 f is Integral wafer nano-imprinting principle of work schematic diagram.
Fig. 1 g is Integral wafer nano-imprinting principle of work schematic diagram.
Fig. 2 is the embodiment of the invention 1 Full wafer photo nanoimprint lithography machine three-dimensional structure schematic diagram.
Fig. 3 is the three-dimensional structure schematic diagram of the embodiment of the invention 1 imprint head 1.
Fig. 4 is the internal duct arrangement schematic diagram of shuttering work platform 101 in the embodiment of the invention 1 imprint head 1.
Fig. 5 is that the internal duct of shuttering work platform 101 in the embodiment of the invention 1 imprint head 1 is arranged the sectional structure schematic diagram.
Fig. 6 is that the internal duct of shuttering work platform 101 in the embodiment of the invention 1 imprint head 1 is arranged the sectional structure schematic diagram.
Fig. 7 is the exterior line arrangement schematic diagram of shuttering work platform 101 in the embodiment of the invention 1 imprint head 1.
Fig. 8 is transparent three layers of composite shuttering 3 structural representation that the present invention uses.
Fig. 9 is the structural representation of the embodiment of the invention 1 wafer-supporting platform 4.
Figure 10 is the three-dimensional structure schematic diagram of the embodiment of the invention 1 wafer-supporting platform 4.
Figure 11 is the three-dimensional structure schematic diagram of the embodiment of the invention 1 wafer-supporting platform 4 fixed pedestals 401.
Figure 12 is the embodiment of the invention 2 Full wafer photo nanoimprint lithography machine three-dimensional structure schematic diagram.
Figure 13 is the three-dimensional structure schematic diagram of the embodiment of the invention 2 imprint head 1 the first scheme.
Figure 14 is the three-dimensional structure schematic diagram of the embodiment of the invention 2 imprint head 1 first scheme.
Figure 15 is the course of work process flow diagram of Full wafer photo nanoimprint lithography machine of the present invention.
Embodiment
The present invention is described in further detail according to embodiment that technical scheme of the present invention provides below in conjunction with accompanying drawing and inventor.
A kind of Full wafer photo nanoimprint lithography machine, as shown in Figure 2, it comprises: imprint head 1, exposure system 2, template 3, wafer-supporting platform 4, demolding nozzle 5, frame 6, marble base 7, vacuum line 8 and pressure piping 9, wherein, described template 3 is fixed in the bottom surface 10104 of imprint head 1 cope match-plate pattern worktable, wafer-supporting platform 4 places under template 3 vertical, and is fixed on the marble base 7, and the wafer-supporting platform periphery is provided with demolding nozzle 5; The ultraviolet source of exposure system 2 places in the imprint head 1 exposure operating room 102, and be positioned at transparent template worktable 101 directly over; Vacuum line 8 links to each other with air admission hole A101011, air admission hole B101012, the air admission hole C101013 of pressure piping 9 and shuttering work platform 101 two sides; Vacuum cup 403 on vacuum line 8 and the wafer-supporting platform 4 and operation valve air admission hole II 40402, the operation valve air admission hole I 40401 of fixed pedestal 401 link to each other; Imprint head 1 is fixed on the crossbeam of frame 6; Marble base 7 plays the effect of damping and vibration isolation in order to fixedly wafer-supporting platform 4 and frame 6 to whole system.
Fig. 3 is the embodiment of the invention 1 imprint head 1 three-dimensional structure schematic diagram, it comprises: shuttering work platform 101, exposure operating room 102, ring flange 103, ball-screw 104, shaft coupling 105, servomotor 106, guide frame 107, guide pole 108 and three supporting regulating blocks 109, wherein, exposure operating room 102 and shuttering work platform 101 link to each other by screw, shuttering work platform 101 inside are provided with horizontal pipeline 10103 and vertical duct 10102, realize pressurized air and the even distribution of vacuum gas on template 3; (the 101 operating room's ultraviolet lights that should allow to expose see through the shuttering work platform, and continue to see through the template 3 that connects its bottom, realize on-chip resist after graphical is exposed and solidifies; Exposure operating room 102 is connected by ring flange 103 with ball-screw 104, and the inner top 10201 even distributing installation ultraviolet source UV LED lamps of exposure operating room 102 connect path channels and control module on the ultraviolet source UV LED lamp, form exposure system 2; Shaft coupling 105 is installed on the ball-screw 104, and servomotor 106 is installed on the shaft coupling 105, and guide frame 107 is installed in frame 6 bottoms, and guide pole 108 is installed in guide frame 107 inside; Servomotor 106, shaft coupling 105, ball-screw 104, guide frame 107 and guide pole 108 consist of the motor function assembly, realize that shuttering work platform 101 and exposure operating room 102 are along up and down vertical movement of Z-direction; 3 supporting regulating blocks 109 place the bottom of shuttering work platform 101, mutually are 120 degree angles and evenly distribute, and supporting regulating block 109 is used for the impression distance of adjusting template 3 and substrate; Shuttering work platform 101 two sides are provided with air admission hole A101011, air admission hole B101012, air admission hole C101013.
Fig. 4 is the internal duct arrangement schematic diagram of shuttering work platform 101 in the embodiment of the invention 1 imprint head 1, it comprises shuttering work platform bottom surface 10104, shuttering work platform bottom surface 10104 is provided with shuttering work platform groove surface 10101 and horizontal pipeline 10103, shuttering work platform groove surface 10101 is provided with vertical duct 10102, one end of vertical duct 10102 communicates with shuttering work platform groove surface 10101, and the other end communicates with horizontal pipeline 10103; Vertical duct 10102 and horizontal pipeline 10103 are through hole.The shape of shuttering work platform groove surface 10101 is consistent with supporting layer 303 in the template 3, and size increases 2mm than it all around, and supporting layer 303 is embedded in the shuttering work platform groove surface 10101 during template 3 initial position.
Fig. 5 is that the internal duct of shuttering work platform 101 in the embodiment of the invention 1 imprint head 1 is arranged the sectional structure schematic diagram.
Fig. 6 is that the internal duct of shuttering work platform 101 in the embodiment of the invention 1 imprint head 1 is arranged the sectional structure schematic diagram.
Fig. 7 is the exterior line arrangement schematic diagram of shuttering work platform 101 in the embodiment of the invention 1 imprint head 1, it comprises directional control valve A10106, plug 10107, connecting line 10108 and directional control valve B10109, wherein, the end of directional control valve B10109 connects the air admission hole A101011 of template worktable 101, plug 10107 shutoff of an other end; Directional control valve A10106 connects respectively air admission hole B101012 and air admission hole C101013, and the other end of air admission hole B101012 and air admission hole C101013 uses plug 10107 shutoff; Connecting line 10108 realizes that vacuum lines 8, pressure piping 9, directional control valve A10106, directional control valve B10109, air admission hole A101011, air admission hole B101012 be connected connection with air admission hole C101013.
Fig. 8 is transparent three layers of composite shuttering 3 structural representation that the present invention uses, and wherein, the ground floor orlop is structural sheet 301, and second layer middle layer is that 302, the three layers of the superiors of elastic layer are supporting layers 303.Described structural sheet 301 comprises the micro nano structure figure 30101 that will make, and elastic layer 302 is positioned on the structural sheet 301, and supporting layer 303 is positioned on the elastic layer 302.The thickness range of structural sheet 301 is 100-200 microns; The thickness range of elastic layer 302 is 400-700 microns; The thickness range of supporting layer 303 is 100-200 microns.Structural sheet 301, elastic layer 302 and supporting layer 303 materials are PDMS, but its hardness is different.The material of structural sheet 301 and supporting layer 303 is hard PDMS dimethyl silicone polymers), i.e. h-PDMS, its hardness be elastic layer 302 use the PDMS hardness 3-5 doubly; Elastic layer 402 is selected has the soft PDMS material of good buckling deformation performance, and its Young modulus is 5N/mm, i.e. s-PDMS.Structural sheet 301 is consistent with supporting layer 303 sizes, and elastic layer 302 is than structural sheet 301 and the large 60-150 millimeter of supporting layer 303 sizes.
Fig. 9 is the structural representation of the embodiment of the invention 1 wafer-supporting platform 4, it comprises fixed pedestal 401, base 402, vacuum cup 403 and vacuum line 404 float, wherein, the base 402 that floats is positioned on the fixed pedestal 401, and vacuum cup 403 is fixed in 402 upper plane of the base that floats by screw 405; Fixed pedestal has spill spherical structure 40101, and unsteady base has convex spherical structure 40201, contacts cooperation for semisphere between fixed pedestal and the unsteady base; By between fixed pedestal and the unsteady base for spherical contact to cooperate realize template and the adjustment of substrate parallel self-adaptation and wedge shape compensation of error; Be provided with horizontal pipeline 40103 in the fixed pedestal 401, vacuum line 404 is provided with operation valve air admission hole I 40401 and operation valve air admission hole II 40402, and vacuum cup 403 is provided with horizontal air intake opening; Horizontal pipeline 40103 links to each other with operation valve air admission hole I 40401, and horizontal air intake opening links to each other with operation valve air admission hole II 40402.
In the structure of described wafer-supporting platform, also be provided with vertical duct 40102 in the fixed pedestal 401, fixed pedestal 401 central authorities are provided with central circular through hole 40104; Be provided with interior manhole 40105 in the fixed pedestal 401, interior manhole 40105 communicates with central circular through hole 40104, horizontal pipeline 40103 and vertical duct 40102 respectively; Vertical duct 40102 topmost communicates with spill spherical structure 40101, vertical duct 40102 communicates with manhole 40105 bottom, horizontal pipeline 40103 links to each other with operation valve air admission hole I 40401, by opening the operation valve air admission hole I 40401 that links to each other with 401 horizontal pipelines 40103 in the fixed pedestal, under the effect of negative pressure of vacuum, the locking of base 402 on fixed pedestal 401 and fixing realizes floating after the leveling, and keep relative pose between leveling meron and the template, guarantee being parallel to each other between the template and substrate in moulding process; Horizontal air intake opening in the vacuum cup 403 links to each other with operation valve air admission hole II 40402, by opening the operation valve air admission hole II40402 that links to each other with horizontal air intake opening in the vacuum cup 403, the gas pressure intensity that vacuum cup 403 produces between up and down two planes of substrate is poor, realizes under suction function the clamping of substrate and fixing.
Figure 10 is the three-dimensional structure schematic diagram of the embodiment of the invention 1 wafer-supporting platform 4.
Figure 11 is the three-dimensional structure schematic diagram of the embodiment of the invention 1 wafer-supporting platform 4 fixed pedestals 401.
The structure of described vacuum line is: comprise vacuum pump or vacuum generator, directional control valve, pressure control valve and connecting line, the vacuum tightness working range is:＜-0.9bar, the vacuum tightness of impression and knockout course use is-5kPa～-100kPa; Vacuum line links to each other with the air admission hole of the directional control valve of the shuttering work platform of the vacuum cup that is connected wafer-supporting platform inside, fixed pedestal and imprint head inside respectively, realize the fixing of substrate, the locking of base and fixing of floating after the leveling, and the power source the when demoulding is provided.
The structure of described pressure piping is: comprise air compressor, gas storage bag, directional control valve, pressure control valve and connecting line; The working range of pressure piping is: 0-5bar; Working pressure in the moulding process is 10-400mbar; Pressure piping links to each other the power source when impression is provided with the air admission hole of the shuttering work platform directional control valve that is connected imprint head inside.
Figure 12 is the embodiment of the invention 2 Full wafer photo nanoimprint lithography machine three-dimensional structure schematic diagram, and embodiment 2 and the key distinction of embodiment 1 are mechanism form different of imprint head 1 and frame 6.
Figure 13 is the two guide rail straight-line guidance three-dimensional structure schematic diagram of the embodiment of the invention 2 imprint head 1 the first scheme, it comprises shuttering work platform 101, exposure operating room 102, ring flange 103, ball-screw 104, shaft coupling 105, servomotor 106, supporting regulating block 109, slide block 1011, small rack 1012, web member 1013 and guide rail 1014, wherein, exposure operating room 102 and shuttering work platform 101 link to each other by screw, shuttering work platform 101 inside are provided with horizontal pipeline 10103 and vertical duct 10102, realize pressurized air and the even distribution of vacuum gas on template 3; (the 101 operating room's ultraviolet lights that should allow to expose see through the shuttering work platform, and continue to see through the template 3 that connects its bottom, realize on-chip resist after graphical is exposed and solidifies; Exposure operating room 102 is connected by ring flange 103 with ball-screw 104, and the inner top 10201 even distributing installation ultraviolet source UV LED lamps of exposure operating room 102 connect path channels and control module on the ultraviolet source UV LED lamp, form exposure system 2; Shaft coupling 105 is installed on the ball-screw 104, servomotor 106 is installed on the shaft coupling 105, slide block 1011 is installed on the frame 6 by slide rail 1014, and small rack 1012 is installed between frame 6 and the servomotor 106, and web member 1013 is installed between frame 6 and the shaft coupling 105; Servomotor 106, shaft coupling 105, small rack 1012, web member 1013, ball-screw 104, slide block 1011, guide rail 1014 component movement functional parts realize that shuttering work platform 101 and exposure operating room 102 are along up and down vertical movement of Z-direction; 3 supporting regulating blocks 109 place the bottom of shuttering work platform 101, mutually are 120 degree angles and evenly distribute, and supporting regulating block 109 is used for the impression distance of adjusting template 3 and substrate; Shuttering work platform 101 two sides are provided with air admission hole A101011, air admission hole B101012, air admission hole C101013.
Figure 14 is the two guide rod straight-line guidance three-dimensional structure schematic diagram of the embodiment of the invention 2 imprint head 1 first scheme, it comprises shuttering work platform 101, exposure operating room 102, ring flange 103, ball-screw 104, shaft coupling 105, servomotor 106, guide pole 108, supporting regulating block 109, slide block 1011, small rack 1012 and web member 1013, wherein, exposure operating room 102 and shuttering work platform 101 link to each other by screw, shuttering work platform 101 inside are provided with horizontal pipeline 10103 and vertical duct 10102, realize pressurized air and the even distribution of vacuum gas on template 3; (the 101 operating room's ultraviolet lights that should allow to expose see through the shuttering work platform, and continue to see through the template 3 that connects its bottom, realize on-chip resist after graphical is exposed and solidifies; Exposure operating room 102 is connected by ring flange 103 with ball-screw 104, and the inner top 10201 even distributing installation ultraviolet source UV LED lamps of exposure operating room 102 connect path channels and control module on the ultraviolet source UV LED lamp, form exposure system 2; Shaft coupling 105 is installed on the ball-screw 104, servomotor 106 is installed on the shaft coupling 105, slide block 1011 is installed in frame 6 bottoms, guide pole 108 is installed in slide block 1011 inside, small rack 1012 is installed between frame 6 and the servomotor 106, and web member 1013 is installed between frame 6 and the shaft coupling 105; Servomotor 106, shaft coupling 105, small rack 1012, web member 1013, ball-screw 104, slide block 1011, guide pole 108 component movement functional parts realize that shuttering work platform 101 and exposure operating room 102 are along up and down vertical movement of Z-direction; 3 supporting regulating blocks 109 place the bottom of shuttering work platform 101, mutually are 120 degree angles and evenly distribute, and supporting regulating block 109 is used for the impression distance of adjusting template 3 and substrate; Shuttering work platform 101 two sides are provided with air admission hole A101011, air admission hole B101012, air admission hole C101013.
Figure 15 is the course of work process flow diagram of Full wafer photo nanoimprint lithography machine of the present invention, and the specific works process is as follows:
(1) nanometer stamping and photoetching machine working state of system initialization procedure.Place on the vacuum cup 403 of wafer-supporting platform 4 being coated with the substrate that is covered with resist, open the vacuum line 40402 of vacuum cup, substrate is fixed on the vacuum cup 403; Pass through directional control valve, close the pressure piping of imprint head 1 shuttering work platform 101, open vacuum line, template 3 is adsorbed on the groove surface 10101 in imprint head 1 shuttering work platform bottom surface 10104 and the shuttering work table top, the upper surface that is specifically the elastic layer 302 of template 3 contacts with shuttering work platform bottom surface 10104, and the upper surface of the supporting layer 303 of template 3 contacts with groove surface 10101 in the shuttering work table top.
(2) leveling process.At first, servomotor 106 drives imprint head 1 by ball-screw 104 and moves downward fast, contacts with vacuum cup 403 or unsteady base 402 on the wafer-supporting platform 4 until be fixed in the support regulating block 109 of shuttering work platform 101; Subsequently, reduce the speed that presses down of imprint head 1, imprint head continues to move downward, under the effect of imprint head 1 downforce, contact with sphere between the unsteady base 402 to cooperate by the fixed pedestal 401 of wafer-supporting platform 4 and produce the template 3 that relative sliding realizes being fixed on the imprint head 1 and adjust and the wedge shape compensation of error with the substrate parallel self-adaptation that is fixed on the wafer-supporting platform 4; At last, after the complete leveling of template 3 and substrate, open the vacuum line 40401 on the fixed pedestal 401 on the wafer-supporting platform 4, in the clamping of base 402 on fixed pedestal 402 and fixing of realize floating under the negative pressure of vacuum effect, keep the relative pose between leveling meron and the template 3, guarantee impressing subsequently, keeping being parallel to each other between template 3 and the substrate in curing and the knockout course.
(3) moulding process.At first, from shuttering work platform 101 centers 10109, initial vacuum state is converted to pressure state, under the auxiliary force of impression of gas and capillary force acting in conjunction, the elastic layer 302 of template 3 vertically produces flexural deformation in the center, the part begins to contact on-chip resist, and the micro nano structure cavity of mold center position begins the filling by resist institute; Subsequently, one by one vacuum state is converted to pressure state (switching by directional control valve realizes) from template 3 centers to two side directions, formwork structure layer 301 constantly enlarges with the contact area of resist, until whole formwork structure layer 301 contacts fully with resist on the full wafer wafer, all the micro nano structure cavitys in the template are by the filling of resist institute; At last, the pressure of all pressure channels keeps uniformity consistency to increase, and realizes the complete filling of liquid anticorrosive additive material in mould micro nano structure cavity, and is thinned to predetermined residual layer thickness.
(4) solidification process.Open the ultraviolet source of exposure operating room 101, ultraviolet light sees through mould resist is exposed, and fully solidifies patterned liquid resist, 5-20s set time (full wafer wafer).
(5) knockout course.At first, from shuttering work platform 101 outermost both sides, the closing presure pipeline is opened vacuum line, opens simultaneously the nozzle 5 that the demoulding is used.Produce under the horizontal force acting in conjunction in pull of vacuum and nozzle pressurized air, begin template 3 from outermost and be separated from each other with wafer; Subsequently, one by one pressure is converted back vacuum state (switching by directional control valve realizes) from wafer two side direction templates 3 centers, realize mould continuously demoulding of " opening " formula from center, wafer lateral, knockout press is making a concerted effort of pull of vacuum and horizontal force; At last, template center position and wafer are separated, and the realization template is separated fully with wafer, finishes the demoulding.
(6) imprint head 1 resets.Servomotor 106 drives imprint head 1 by ball-screw 104 and moves upward fast, turns back to system's initial position.
(7) wafer-supporting platform 4 resets.At first, close the vacuum line on the wafer-supporting platform vacuum cup, take off the wafer after the complex, subsequently, close the vacuum line 40401 of wafer-supporting platform fixed pedestal 401, make the base 402 that floats be in free state at fixed pedestal 401.
Vacuum line system in the Full wafer photo nanoimprint lithography machine comprises: vacuum pump (vacuum generator), operation valve, connecting line; The vacuum tightness of its impression and knockout course work is :-10kPa～-50kPa; The vacuum line system links to each other with the air intake opening of the directional control valve of the shuttering work platform of the vacuum cup that is connected wafer-supporting platform inside, fixed pedestal and imprint head inside respectively, realize the fixing of substrate, the locking of base and fixing of floating after the leveling, and the power source the when demoulding is provided.
Claims (9)
1. Full wafer photo nanoimprint lithography machine, it is characterized in that, it comprises: imprint head (1), exposure system (2), template (3), wafer-supporting platform (4), demolding nozzle (5), frame (6), marble base (7), vacuum line (8) and pressure piping (9), wherein, described template (3) is fixed on the imprint head (1), wafer-supporting platform (4) places under template (3) vertical, and be fixed on the marble base (7), the wafer-supporting platform periphery is provided with demolding nozzle (5); The ultraviolet source of exposure system (2) places in the imprint head (1); Vacuum line (8) links to each other with wafer-supporting platform (4), and vacuum line (8) links to each other with imprint head (1) respectively with pressure piping (9);
The structure of described wafer-supporting platform is: comprise fixed pedestal (401), unsteady base (402), vacuum cup (403) and vacuum line (404), wherein, the base (402) that floats is positioned on the fixed pedestal (401), and vacuum cup (403) is fixed in the upper plane of (402) of the base that floats; Fixed pedestal has spill spherical structure (40101), and unsteady base has convex spherical structure (40201), contacts cooperation for semisphere between fixed pedestal and the unsteady base; Be provided with horizontal pipeline (40103) in the fixed pedestal (401), vacuum line (404) is provided with operation valve air admission hole I (40401) and operation valve air admission hole II (40402), and vacuum cup (403) is provided with horizontal air intake opening; Horizontal pipeline (40103) links to each other with operation valve air admission hole I (40401), and horizontal air intake opening links to each other with operation valve air admission hole II (40402).
2. a kind of Full wafer photo nanoimprint lithography machine according to claim 1, it is characterized in that: the structure of described imprint head is: comprise shuttering work platform (101), exposure operating room (102), ring flange (103), ball-screw (104), shaft coupling (105), servomotor (106), guide frame (107), guide pole (108) and three supporting regulating blocks (109), wherein, exposure operating room (102) links to each other by screw with shuttering work platform (101), and shuttering work platform (101) inside is provided with horizontal pipeline (10103) and vertical duct (10102); Exposure operating room (102) is connected by ring flange (103) with ball-screw (104), the inner top (10201) of exposure operating room (102) is the distributing installation ultraviolet source evenly, connect path channels and control module on the ultraviolet source, form exposure system (2); Shaft coupling (105) is installed on the ball-screw (104), and servomotor (106) is installed on the shaft coupling (105), and guide frame (107) is installed in frame (6) bottom, and guide pole (108) is installed in guide frame (107) inside; 3 supporting regulating blocks (109) place the bottom of shuttering work platform (101); Shuttering work platform (101) two sides are provided with air admission hole A(101011), air admission hole B(101012), air admission hole C(101013);
Or the structure of described imprint head is: comprise shuttering work platform (101), exposure operating room (102), ring flange (103), ball-screw (104), shaft coupling (105), servomotor (106), supporting regulating block (109), slide block (1011), small rack (1012), web member (1013) and guide rail (1014), wherein, exposure operating room (102) links to each other by screw with shuttering work platform (101), and shuttering work platform (101) inside is provided with horizontal pipeline (10103) and vertical duct (10102); Exposure operating room (102) is connected by ring flange (103) with ball-screw (104), the inner top (10201) of exposure operating room (102) is the distributing installation ultraviolet source evenly, connect path channels and control module on the ultraviolet source, form exposure system (2); Shaft coupling (105) is installed on the ball-screw (104), servomotor (106) is installed on the shaft coupling (105), slide block (1011) is installed on the frame (6) by guide rail (1014), small rack (1012) is installed between frame (6) and the servomotor (106), and web member (1013) is installed between frame (6) and the shaft coupling (105); 3 supporting regulating blocks (109) place the bottom of shuttering work platform (101); Shuttering work platform (101) two sides are provided with air admission hole A(101011), air admission hole B(101012), air admission hole C(101013);
Or: the structure of described imprint head is: comprise shuttering work platform (101), exposure operating room (102), ring flange (103), ball-screw (104), shaft coupling (105), servomotor (106), guide pole (108), supporting regulating block (109), slide block (1011), small rack (1012) and web member (1013), wherein, exposure operating room (102) links to each other by screw with shuttering work platform (101), and shuttering work platform (101) inside is provided with horizontal pipeline (10103) and vertical duct (10102); Exposure operating room (102) is connected by ring flange (103) with ball-screw (104), the inner top (10201) of exposure operating room (102) is the distributing installation ultraviolet source evenly, connect path channels and control module on the ultraviolet source, form exposure system (2); Shaft coupling (105) is installed on the ball-screw (104), servomotor (106) is installed on the shaft coupling (105), slide block (1011) is installed in frame (6) bottom, guide pole (108) is installed in slide block (1011) inside, small rack (1012) is installed between frame (6) and the servomotor (106), and web member (1013) is installed between frame (6) and the shaft coupling (105); 3 supporting regulating blocks (109) place the bottom of shuttering work platform (101); Shuttering work platform (101) two sides are provided with air admission hole A(101011), air admission hole B(101012), air admission hole C(101013).
3. a kind of Full wafer photo nanoimprint lithography machine according to claim 2, it is characterized in that: the internal duct structure of shuttering work platform (101) is in the described imprint head (1): comprise shuttering work platform bottom surface (10104), shuttering work platform bottom surface (10104) is provided with shuttering work platform groove surface (10101) and horizontal pipeline (10103), shuttering work platform groove surface (10101) is provided with vertical duct (10102), one end of vertical duct (10102) communicates with shuttering work platform groove surface (10101), and the other end communicates with horizontal pipeline (10103).
4. a kind of Full wafer photo nanoimprint lithography machine according to claim 2, it is characterized in that: the exterior line structure of shuttering work platform (101) is in the described imprint head (1): comprise directional control valve A(10106), plug (10107), connecting line (10108) and directional control valve B(10109), wherein, directional control valve B(10109) a end connects the air admission hole A(101011 of template worktable (101)), plug (10107) shutoff of an other end; Directional control valve A(10106) connect respectively air admission hole B(101012) and air admission hole C(101013), air admission hole B(101012) and air admission hole C(101013) the other end use plug (10107) shutoff; Connecting line (10108) is realized vacuum line (8), pressure piping (9), directional control valve A(10106), directional control valve B(10109), air admission hole A(101011), air admission hole B(101012) connection of being connected with air admission hole C(101013.
5. a kind of Full wafer photo nanoimprint lithography machine according to claim 1, it is characterized in that: in the structure of described wafer-supporting platform, also be provided with vertical duct (10102) in the fixed pedestal (401), fixed pedestal (401) central authorities are provided with central circular through hole (40104); Be provided with interior manhole (40105) in the fixed pedestal (401), interior manhole (40105) communicates with central circular through hole (40104), horizontal pipeline (40103) and vertical duct (40102) respectively; Vertical duct (40102) topmost communicates with spill spherical structure (40101), vertical duct (40102) communicates with interior manhole (40105) bottom, horizontal pipeline (40103) links to each other with operation valve air admission hole I (40401), and the horizontal air intake opening in the vacuum cup (403) links to each other with operation valve air admission hole II (40402).
6. a kind of Full wafer photo nanoimprint lithography machine according to claim 2, it is characterized in that: the structure of described template (3) is: comprise three layers, orlop is structural sheet (301), the middle layer is elastic layer (302), the superiors are supporting layer (303), described structural sheet (301) is provided with the micro nano structure figure (30101) that will make, and elastic layer (302) is positioned on the structural sheet (301), and supporting layer (303) is positioned on the elastic layer (302).
7. each described a kind of Full wafer photo nanoimprint lithography machine according to claim 2-4, it is characterized in that: described vacuum line (8) respectively with wafer-supporting platform (4) on vacuum cup and the directional control valve air admission hole of fixed pedestal link to each other, vacuum line (8) links to each other with the air admission hole of pressure piping (9) with the directional control valve of imprint head (1) shuttering work platform two sides.
8. a kind of Full wafer photo nanoimprint lithography machine according to claim 6, it is characterized in that: described vacuum line (8) respectively with wafer-supporting platform (4) on vacuum cup and the directional control valve air admission hole of fixed pedestal link to each other, vacuum line (8) links to each other with the air admission hole of pressure piping (9) with the directional control valve of imprint head (1) shuttering work platform two sides.
9. the method for utilizing a kind of Full wafer photo nanoimprint lithography machine described in the claim 8 to carry out the Integral wafer nano-imprinting photoetching, it is characterized in that: step is as follows:
(1) nanometer stamping and photoetching machine working state of system initialization procedure: will be coated with on the vacuum cup that the substrate that is covered with resist places wafer-supporting platform, and open the vacuum line of vacuum cup, substrate is fixed on the vacuum cup; Close the pressure piping of impression head mould plate worktable, open vacuum line, the template elastic layer is adsorbed on imprint head shuttering work platform bottom surface, and the shuttering supporting layer is adsorbed in the groove surface of shuttering work platform bottom surface;
(2) leveling process: at first, servomotor drives the imprint head assembly by ball-screw and moves downward fast, contacts with vacuum cup or unsteady base on the wafer-supporting platform until be fixed in the supporting regulating block of shuttering work platform; Subsequently, reduce the speed that presses down of imprint head, imprint head continues to move downward, under the effect of imprint head downforce, contact with semisphere between the unsteady base to cooperate by the wafer-supporting platform fixed pedestal and produce the template that relative sliding realizes being fixed on the imprint head and adjust and the wedge shape compensation of error with the substrate parallel self-adaptation that is fixed on the wafer-supporting platform; At last, after the complete leveling of template and substrate, open the vacuum line on the fixed pedestal on the wafer-supporting platform, the locking of base on fixed pedestal and fixing of under the negative pressure of vacuum effect, realize floating, keep the relative pose between leveling meron and the template, guarantee in whole impression, curing and knockout course keeping parallelism between the template and substrate;
(3) moulding process: at first, from shuttering work platform center, initial vacuum state is converted to pressure state, under the auxiliary force of impression of gas and capillary force acting in conjunction, the elastic layer of template vertically produces flexural deformation in the center, the part begins to contact on-chip resist, and the micro nano structure cavity of mold center position begins the filling by resist institute; Subsequently, one by one vacuum state is converted to pressure state from the template center position to two side directions, the contact area of formwork structure layer and resist constantly enlarges, until whole formwork structure layer contacts fully with resist on the full wafer wafer, all the micro nano structure cavitys in the template are by the filling of resist institute; At last, the pressure of all pressure channels keeps uniformity consistency to increase, and realizes the complete filling of liquid anticorrosive additive material in mould micro nano structure cavity, and is thinned to predetermined residual layer thickness;
(4) solidification process: open the ultraviolet source of exposure operating room, ultraviolet light sees through mould resist is exposed, and fully solidifies liquid resist, set time 5-20s;
(5) knockout course: at first, from shuttering work platform outermost both sides, the closing presure pipeline, open vacuum line, open simultaneously the nozzle that the demoulding is used, produce under the horizontal force acting in conjunction at pull of vacuum and nozzle pressurized air, begin template and on-chip resist is separated from each other from outermost; Subsequently, two side direction template center convert back vacuum state with pressure one by one from substrate, realize mould continuously demoulding of " opening " formula from center, wafer lateral, and knockout press is making a concerted effort of pull of vacuum and horizontal force; At last, template center position and substrate are separated, and the realization template is separated fully with substrate, finishes the demoulding;
(6) imprint head resets: servomotor drives imprint head by ball-screw and moves upward fast, turns back to system's initial position;
(7) wafer-supporting platform resets: at first, close the vacuum line on the wafer-supporting platform vacuum cup, take off the substrate after the complex, subsequently, close the vacuum line of wafer-supporting platform fixed pedestal, make the base that floats be in free state at fixed pedestal.
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| WO2007046528A2 (en) * | 2005-10-18 | 2007-04-26 | Canon Kabushiki Kaisha | Imprint apparatus, imprint method, and mold for imprint |
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