CN102324899A - Transresistance amplifier with received signal strength indication (RSSI) function - Google Patents
Transresistance amplifier with received signal strength indication (RSSI) function Download PDFInfo
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Abstract
The invention discloses a transresistance amplifier with a received signal strength indication (RSSI) function. The transresistance amplifier is characterized in that an image current source and a second current voltage switching circuit are additionally arranged in an existing transresistance amplifier, so that an image current signal is generated and then converted into an image voltage signal used as an RSSI signal for output, thus the power loss brought by a differential amplifier device is eliminated; simultaneously the transresistance value of the second current voltage switching circuit ranges from 200ohm to 600ohm, thus the condition that the accuracy requirement of optical power detection cannot be met due to RSSI signal saturation caused by overlarge optical power can be prevented; and a BJT (bipolar junction transistor) image current source of a high-speed bandwidth small-signal triode is also used, so that the industrial cost is low while the speed requirement of signal high-speed transmission can be met; and finally the transresistance of a first current voltage switching circuit with a resistance value ranging from 800ohm to 2000ohm ensures that the signal-to-noise ratio of the differential amplifier is higher.
Description
Technical field
The present invention relates to optical communication field, relate in particular to when EPON and be operated under the time division multiplexing, be used to receive the uplink optical signal of burst, and it is carried out the device of intensity detection.
Background technology
The used transmission line in traditional communication field all is a copper core cable, and efficiency of transmission is low, and anti-electromagnetic interference capability is poor.Because optical fiber has the efficiency of transmission height; Characteristics such as anti-electromagnetic interference capability is strong, therefore, along with raising to the communications rate requirement; And the lifting of modern manufacturing process descends the optical fiber manufacturing cost, and the increasing optical fiber that utilizes in modern communications field carries out transmission of Information.Optical communication network is connected to the Access Network of user terminal, can be divided into AON (Active Optical Network, active optical network) and PON (Passive Optical Network, EPON) according to whether having inserted active device.Because PON has easy maintenance, be convenient to the characteristics installing and expand, obtained using widely, and become the standard criterion of International Telecommunications Union.
A PON is usually by an OLT (Optical Line Terminal, optical line terminal) who is positioned at the central office, and several are positioned at the ONU (Optical Network Unit, optical network unit) of user side and are positioned at optical distribution network formation between the two.In the time of data downstream, OLT is broadcast to each ONU with downlink data packet, and each ONU matees separately according to the address information in the downlink data packet and gets final product.In the time of data uplink, because upstream data is often measured little and temporal regularity property is not high, existing way is to let each ONU with time division multiplexing work.Because there is the possibility of external interference in fibre circuit, this just needs OLT to judge its certain light signal that receives, and is the upward signal from the burst of certain ONU simultaneously, still is one section external interference.General way is that the upward signal to this burst carries out (the Received Signal Strength Indicator based on RSSI; The indication of reception signal strength signal intensity) the luminous power sampling of signal; Received optical power value to obtaining is judged; If in the appropriate thresholds scope, just think one section upward signal, simultaneously according to relevant numerical adjustment threshold level.
OLT equipment can be divided into optical-electric module and two parts of system host, and optical-electric module is accomplished the conversion of photosignal, and the monitoring and the alarm of photoelectric properties are provided simultaneously, comprises the burst luminous power size of utilizing the RSSI judgement to receive." EPON of China Telecom equipment and technology require V2.1 " increased the regulation of " received optical power of OLT detects " on the basis of V2.0 version: " OLT should support the measurement function from the up average light power of each ONU that it is received; be not inferior to ± 1dB to the certainty of measurement the in-10dBm scope at-30dBm, and minimum measurement is not more than 600ns sample time ".
As shown in Figure 1, be the typical circuit structure diagram that receives the burst uplink optical signal and generate the trans-impedance amplifier of RSSI in the prior art.Dotted portion is trans-impedance amplifier (Trans-impedance Amplifier among the figure; Be designated hereinafter simply as TIA); TIA inner integrated current-to-voltage converting circuit and differential signal amplifier two parts are used for current signal is enlarged into voltage signal, have the characteristics of high bandwidth high response speed.Current-to-voltage converting circuit is made up of a current-to-voltage convertor and the resistance of striding that is connected across these current-to-voltage convertor two ends among the figure.Booster circuit input 3.3V voltage to avalanche photodide (Avalanche Photodiode is hereinafter to be referred as APD) output booster voltage, is used for reverse bias voltage to APD being provided among the figure, improves the ratio of profit increase that APD is enlarged into faint optical signal current signal.The principle of entire circuit is: after APD received the burst uplink optical signal, APD converted this light signal into current signal; After TIA receives this current signal; Convert this current signal into voltage signal through the current/voltage converter, through differential amplifier this voltage signal is decomposed into the positive data-signal again and the such differential electric signal of anti-phase data signal is outwards exported as data-signal; This anti-phase data signal also as the RSSI signal through the electric capacity AC coupled to logarithmic detector; It is aanalogvoltage that logarithmic detector will exchange the RSSI conversion of signals; At last through analog to digital converter (Analog-to-Digital Converter; Hereinafter to be referred as ADC) this aanalogvoltage is sampled, accomplish luminous power and detect.
The shortcoming of above-mentioned technology is: because TIA has requirement to the differential electric signal signal to noise ratio, so and striding resistance and must have enough resistances just can reach the ratio of profit increase of its requirement in the current-to-voltage converting circuit that is in series of differential amplifier.The high-gain rate produces heavy current; Finally cause the RSSI signal of TIA output when the uplink optical signal strength ratio is bigger, to be in saturation condition; Make subsequent optical power detection electric current can't distinguish size, can not satisfy the required precision that luminous power detects than high light power.Use anti-phase data signal as the RSSI signal simultaneously, because the additional device of differential amplifier also has power loss, detection also can produce loss as far as luminous power, is unfavorable for the detection of luminous power.
Summary of the invention
To the problems referred to above, the object of the present invention is to provide a kind of have receive the signal strength signal intensity deixis, and can satisfy the trans-impedance amplifier that the luminous power accuracy of detection requires.
The objective of the invention is to realize through following technical scheme:
A kind of trans-impedance amplifier with reception signal strength signal intensity deixis; Comprise first current-to-voltage converting circuit that is used for current signal is converted into voltage signal of part at least; At least part be used for convert voltage signal into positive data-signal and anti-phase data signal differential amplifier as output, also comprise the mirror current source and second current-to-voltage converting circuit; Said mirror current source receives the current signal from avalanche photodide, exports this current signal to first current-to-voltage converting circuit, goes back outgoing mirror image current signal to second current-to-voltage converting circuit; Second current-to-voltage converting circuit is the mirror image voltage signal with this image current conversion of signals, and this mirror image voltage signal is exported as the RSSI signal; Second current-to-voltage converting circuit stride the resistance Standard resistance range be 200 ohm to 600 ohm.
Further, said mirror current source is the BJT mirror current source.BJT mirror current source technology maturation, industrial cost is cheap.
Further again, the used triode of said BJT mirror current source is a high speed bandwidth small-signal triode.High speed bandwidth small-signal triode can satisfy the rate request of signal high-speed transfer.
In addition further, said first current-to-voltage convertor to stride the resistance resistance be 800 ohm to 2000 ohm.Striding resistance and can making first current-to-voltage convertor have bigger ratio of profit increase of big resistance makes the signal to noise ratio of differential amplifier higher.
Beneficial effect of the present invention is:
The present invention increases the mirror current source and second current-to-voltage converting circuit through the inside at existing trans-impedance amplifier; Make current signal produce the image current signal; Be that the mirror image voltage signal is exported as the RSSI signal with this image current conversion of signals again; Be convenient to optical module receipts end and carry out detecting, eliminated the power loss of bringing because of the differential amplifier device based on the luminous power of RSSI; Simultaneously second current-to-voltage converting circuit to stride the resistance Standard resistance range be 200 ohm to 600 ohm; Both made the RSSI signal obtain amplifying; Signal is clear, has prevented again to cross the saturated situation that causes satisfying the required precision that luminous power detects of ambassador RSSI signal because of luminous power; Use the BJT mirror current source of high speed bandwidth small-signal triode simultaneously, industrial cost is cheap when can satisfy the rate request of signal high-speed transfer; Last Standard resistance range be 800 ohm to 2000 ohm first current-to-voltage converting circuit stride resistance, can make the signal to noise ratio of differential amplifier higher.
Description of drawings
Fig. 1 is the typical circuit structure diagram that receives the burst uplink optical signal and generate the trans-impedance amplifier of RSSI in the prior art;
Fig. 2 has the module diagram of an embodiment of trans-impedance amplifier who receives the signal strength signal intensity deixis for the present invention;
Fig. 3 has the circuit structure diagram of a preferred embodiment of trans-impedance amplifier that receives the signal strength signal intensity deixis for the present invention;
Fig. 4 has the circuit structure diagram of another embodiment of trans-impedance amplifier that receives the signal strength signal intensity deixis for the present invention.
Embodiment
Disclosed all characteristics in this specification, or the step in disclosed all methods or the process except mutually exclusive characteristic and/or the step, all can make up by any way.
Disclosed arbitrary characteristic in this specification (comprising any claim, summary and accompanying drawing) is only if special narration all can be replaced by other equivalences or the alternative features with similar purpose.That is, only if special narration, each characteristic is an example in a series of equivalences or the similar characteristics.The description to alternative features is to being equal to the description of technical characterictic, must not being regarded as the donation to the public in this specification simultaneously.
Term in this specification (comprising any claim, summary and accompanying drawing) like no specified otherwise, all is defined as the peculiar implication in this area if having the peculiar implication of general sense and this area simultaneously.
As shown in Figure 1, be the typical circuit structure diagram that receives the burst uplink optical signal and generate the trans-impedance amplifier of RSSI in the prior art.Booster circuit input 3.3V voltage to APD output booster voltage, is used for reverse bias voltage to APD being provided, and improves the ratio of profit increase that APD is enlarged into faint optical signal current signal.After APD received the burst uplink optical signal, APD converted this light signal current signal into and outputs to the current-to-voltage convertor among the TIA; The current/voltage converter of TIA converts this current signal into voltage signal, again this voltage signal is outputed to differential amplifier; This voltage signal is decomposed into positive data-signal Data+ with differential amplifier and the such differential electric signal of anti-phase data signal Data-is outwards exported as data-signal; This anti-phase data signal also as the RSSI signal through the electric capacity AC coupled to logarithmic detector, it is aanalogvoltage that logarithmic detector will exchange the RSSI conversion of signals, through ADC this aanalogvoltage is sampled at last, accomplishes luminous power and detects.
ADC can adopt analog to digital converter integrated and the microprocessor of memory, and for example the model of Atmel company is that the AVR single-chip microcomputer of ATMega88 or the model of ADI company are the single-chip microcomputer of ADuC7020.The received optical power intensity of utilizing these chips not only can sample current is kept supplying machine-readable the getting in position but also can this sampled value be kept in the holder.
As shown in Figure 2, the present invention has the module diagram of an embodiment of trans-impedance amplifier who receives the signal strength signal intensity deixis.The present invention has increased mirror current source and current-to-voltage converting circuit in TIA of the present invention inside on the basis of existing technology.The APD output current signal is to mirror current source; Mirror current source outputs to first current-to-voltage converting circuit with this current signal; This first current-to-voltage converting circuit converts this current signal into voltage signal and outputs to differential amplifier, and differential amplifier converts this voltage signal to positive data-signal Data+ again and anti-phase data signal Data-outwards exports as data; Mirror current source also duplicates this current signal simultaneously; Obtain an image current signal; And this image current signal outputed to second current-to-voltage converting circuit; This second current-to-voltage converting circuit is the mirror image voltage signal with this image current conversion of signals, and this mirror image voltage signal is outwards exported the detection that is used for luminous power as the RSSI signal.Increasing such signal benefit along separate routes is; Can export under the situation of needed signal to noise ratio not influencing data; Through to the adjustment of striding the resistance resistance on second current-to-voltage converting circuit, can not occur because of the too high uplink optical signal power that causes that gains when excessive, the RSSI signal of TIA output is in saturation condition in the high strength scope; Can't carry out the situation that luminous power detects, thereby the monitoring range that promptly can increase received optical power satisfies the required precision that luminous power detects.
As shown in Figure 3, be the circuit structure diagram of a preferred embodiment of the present invention.TIA with reception signal strength signal intensity deixis of the present invention is by triode T1, triode T2, first current-to-voltage convertor, and second current-to-voltage convertor, differential amplifier, resistance R 1, resistance R 2 and resistance R 3 are formed; This TIA has signal input tube pin IN, power supply input pin VCC, reference voltage input pin GND, positive data-signal output pin Data+, anti-phase data signal output pin Data-, receiving signal intensity indication signal output pin RSSI.
Signal input tube pin IN links to each other with the collector electrode of triode T1, and signal input tube pin IN also is connected to the base stage of triode T1 and triode T2 simultaneously; The emitter-base bandgap grading of triode T1 is connected to the input of first current-to-voltage convertor; Resistance R 1 is connected across the two ends of first current-to-voltage convertor; The output of first current-to-voltage convertor is connected to an end of resistance R 3 and the input of differential amplifier simultaneously; An other end of resistance R 3 is connected to reference voltage input pin GND; The output of differential amplifier is connected respectively to positive data-signal output pin Data+ and inversion signal output pin Data-.The collector electrode of triode T2 is connected to power supply input pin VCC, and the emitter-base bandgap grading of triode T2 is connected to the input of second current-to-voltage convertor; Resistance R 2 is connected across the second current-to-voltage convertor two ends; The output of second current-to-voltage convertor is connected to receiving signal intensity indication signal output pin RSSI.
After the uplink optical signal input of ONU burst, the APD receiving optical signals produces corresponding current signal, is input to the collector electrode of triode T1 and the base stage of base stage and triode T2 through signal input tube pin IN; Triode T1 and triode T2 are two identical NPN type triodes; Because manufacturing condition is identical; Performance parameter is identical, thereby has formed a mirror current source, so produce an image current almost completely identical with the current signal of APD at triode T2 emitter-base bandgap grading.The current signal of APD outputs to first current-to-voltage convertor and differential amplifier through triode T1, accomplishes the function of data output in the prior art; This image current then outputs to second current-to-voltage convertor from triode T2; By second current-to-voltage convertor this image current is converted into behind the mirror image voltage signal and outwards to export through receiving signal strength signal intensity indication output pin RSSI, accomplish receiving the signal strength signal intensity deixis as the RSSI signal.
According to another embodiment of the invention, triode T1 and triode T2 require to be high-speed wideband small-signal triode that concrete model is SST2222A or SST3904 for example, the rate request in the time of so could satisfying the high-speed transfer signal.
According to still a further embodiment, in order to guarantee the signal to noise ratio requirement of TIA of the present invention, resistance R 1 needs to select value bigger than normal, and its Standard resistance range is 800 ohm to 2000 ohm; And resistance R 2 needs to consider the scope of luminous power detection; Resistance can not be too big; Otherwise when the input of the bigger uplink optical signal of intensity, can cause RSSI signal saturated of second current-to-voltage convertor output, so resistance R 2 Standard resistance ranges are 200 ohm to 600 ohm.
As shown in Figure 4, be the circuit structure diagram of another embodiment of the present invention.The difference of embodiment shown in Figure 4 and preferred embodiment shown in Figure 3 is that embodiment shown in Figure 4 has replaced the BJT mirror current source with the MOSFET mirror current source.Signal input tube pin IN is connected to the drain electrode of FET T3, and signal input tube pin IN also is connected to the grid of FET T3 and FET T4 simultaneously; The substrate of FET T3 is connected to the source electrode of FET T3 and the input of first current-to-voltage convertor simultaneously; The drain electrode of FET T4 is connected to drain electrode power supply pin VDD, and the substrate of FET T4 is connected to the source electrode of FET T4 and the input of second current-to-voltage convertor simultaneously; The annexation of all the other devices is identical with Fig. 3.
FET T3 is the identical N channel enhancement metal-oxide-semiconductor of length-width ratio with FET T4 among Fig. 4; The concrete common on the market model such as the APM2324 of ANPEC company etc. of adopting get final product; Constituted a MOSFET mirror current source thus; Its effect is identical with the BJT mirror current source; All be that the current signal that lets APD produce flows into first current-to-voltage convertor and differential amplifier and then completion data output function, produce the image current signal of this current signal simultaneously, let this image current signal flow into second current-to-voltage convertor and then accomplish receive the signal strength signal intensity deixis.
Claims (4)
1. one kind has the trans-impedance amplifier that receives the signal strength signal intensity deixis; Comprise first current-to-voltage converting circuit that is used for current signal is converted into voltage signal of part at least; At least part be used for convert voltage signal into positive data-signal and anti-phase data signal differential amplifier as output, it is characterized in that:
Also comprise the mirror current source and second current-to-voltage converting circuit; Said mirror current source receives the current signal from avalanche photodide, exports this current signal to first current-to-voltage converting circuit, goes back outgoing mirror image current signal to second current-to-voltage converting circuit; Second current-to-voltage converting circuit is the mirror image voltage signal with this image current conversion of signals, and this mirror image voltage signal is exported as the RSSI signal; It is 200 ohm to 600 ohm that striding in second current-to-voltage converting circuit hindered Standard resistance range.
2. according to the said trans-impedance amplifier with reception signal strength signal intensity deixis of claim 1, it is characterized in that: said mirror current source is the BJT mirror current source.
3. according to the said trans-impedance amplifier with reception signal strength signal intensity deixis of claim 2, it is characterized in that: the used triode of said BJT mirror current source is a high speed bandwidth small-signal triode.
4. according to the said trans-impedance amplifier with reception signal strength signal intensity deixis of claim 1, it is characterized in that: it is 800 ohm to 2000 ohm that striding in said first current-to-voltage converting circuit hindered Standard resistance range.
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Cited By (13)
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| CN103095279A (en) * | 2012-11-13 | 2013-05-08 | 苏州磐启微电子有限公司 | Received signal strength indicator with digital output and low power consumption functions |
| CN104852769A (en) * | 2015-04-08 | 2015-08-19 | 厦门优迅高速芯片有限公司 | Phase-splitting circuit applied to TIA with RSSI on front end of optical receiver |
| WO2016061748A1 (en) * | 2014-10-22 | 2016-04-28 | Source Photonics (Chengdu) Co., Ltd. | Transimpedance amplifier (tia) having an enlarged dynamic range and optical devices using the same |
| CN103873066B (en) * | 2014-03-17 | 2017-02-15 | 上海华虹宏力半导体制造有限公司 | Square root compressor circuit |
| CN104113379B (en) * | 2013-04-17 | 2017-02-22 | 华为技术有限公司 | Signal intensity indicating circuit and method |
| CN106788293A (en) * | 2017-02-07 | 2017-05-31 | 南昌大学 | A kind of faint optical signal multistage amplifier circuit |
| CN108768531A (en) * | 2018-06-01 | 2018-11-06 | 成都数维通信技术有限公司 | A kind of optical module with data copy function |
| CN108847897A (en) * | 2018-08-03 | 2018-11-20 | 青岛海信宽带多媒体技术有限公司 | A kind of optical module |
| CN109787566A (en) * | 2019-03-11 | 2019-05-21 | 广州华欣电子科技有限公司 | A kind of infrared signal amplifying circuit, processing circuit and infrared touch panel |
| CN110086434A (en) * | 2019-02-28 | 2019-08-02 | 厦门优迅高速芯片有限公司 | A kind of circuit promoted across RSSI foot anti-noise ability in resistance amplifying circuit |
| CN110278040A (en) * | 2019-06-28 | 2019-09-24 | 江苏北方湖光光电有限公司 | A kind of high speed weak optical signal receiving module |
| CN110347296A (en) * | 2019-07-17 | 2019-10-18 | 广州华欣电子科技有限公司 | A kind of infrared touch panel and its signal processing circuit |
| CN110492856A (en) * | 2019-08-12 | 2019-11-22 | 上海禾赛光电科技有限公司 | Across resistance amplifying unit electronic feedback circuit, photodetection circuit and laser radar system |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103095279A (en) * | 2012-11-13 | 2013-05-08 | 苏州磐启微电子有限公司 | Received signal strength indicator with digital output and low power consumption functions |
| CN104113379B (en) * | 2013-04-17 | 2017-02-22 | 华为技术有限公司 | Signal intensity indicating circuit and method |
| CN103873066B (en) * | 2014-03-17 | 2017-02-15 | 上海华虹宏力半导体制造有限公司 | Square root compressor circuit |
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| CN104852769A (en) * | 2015-04-08 | 2015-08-19 | 厦门优迅高速芯片有限公司 | Phase-splitting circuit applied to TIA with RSSI on front end of optical receiver |
| CN104852769B (en) * | 2015-04-08 | 2017-07-11 | 厦门优迅高速芯片有限公司 | It is a kind of to be applied to phase splitters of the photoreceiver front-end TIA with RSSI |
| CN106788293B (en) * | 2017-02-07 | 2023-08-01 | 南昌大学 | Weak light signal multistage amplifying circuit |
| CN106788293A (en) * | 2017-02-07 | 2017-05-31 | 南昌大学 | A kind of faint optical signal multistage amplifier circuit |
| CN108768531A (en) * | 2018-06-01 | 2018-11-06 | 成都数维通信技术有限公司 | A kind of optical module with data copy function |
| CN108847897B (en) * | 2018-08-03 | 2021-05-28 | 青岛海信宽带多媒体技术有限公司 | Optical module |
| CN108847897A (en) * | 2018-08-03 | 2018-11-20 | 青岛海信宽带多媒体技术有限公司 | A kind of optical module |
| CN110086434A (en) * | 2019-02-28 | 2019-08-02 | 厦门优迅高速芯片有限公司 | A kind of circuit promoted across RSSI foot anti-noise ability in resistance amplifying circuit |
| CN109787566A (en) * | 2019-03-11 | 2019-05-21 | 广州华欣电子科技有限公司 | A kind of infrared signal amplifying circuit, processing circuit and infrared touch panel |
| CN110278040A (en) * | 2019-06-28 | 2019-09-24 | 江苏北方湖光光电有限公司 | A kind of high speed weak optical signal receiving module |
| CN110278040B (en) * | 2019-06-28 | 2023-08-15 | 江苏北方湖光光电有限公司 | High-speed weak light signal receiving module |
| CN110347296A (en) * | 2019-07-17 | 2019-10-18 | 广州华欣电子科技有限公司 | A kind of infrared touch panel and its signal processing circuit |
| CN110492856A (en) * | 2019-08-12 | 2019-11-22 | 上海禾赛光电科技有限公司 | Across resistance amplifying unit electronic feedback circuit, photodetection circuit and laser radar system |
| CN110492856B (en) * | 2019-08-12 | 2020-11-13 | 上海禾赛光电科技有限公司 | Transimpedance amplification unit circuit feedback circuit, photoelectric detection circuit and laser radar system |
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Application publication date: 20120118 |