CN102299469A - Laser for realizing subnanosecond Q-modulated output by controlling pump light characteristic - Google Patents
Laser for realizing subnanosecond Q-modulated output by controlling pump light characteristic Download PDFInfo
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- CN102299469A CN102299469A CN 201110207779 CN201110207779A CN102299469A CN 102299469 A CN102299469 A CN 102299469A CN 201110207779 CN201110207779 CN 201110207779 CN 201110207779 A CN201110207779 A CN 201110207779A CN 102299469 A CN102299469 A CN 102299469A
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Abstract
The invention provides a laser for realizing subnanosecond Q-modulated output by controlling a pump light characteristic, belonging to the technical field of full-solid lasers and comprising a pumping source, a fiber coupling device, a back cavity mirror, a laser gain medium, an electric light Q-modulated unit and a coupling output mirror in sequence in the light-spreading direction, wherein the back cavity mirror, the laser gain medium, the electric light Q-modulated unit and the coupling output mirror form a resonant cavity; the pumping source is a semiconductor laser and outputs polarized pump light in the pi-direction; the length of the resonant cavity is less than 30mm; the laser gain medium is an Nd: YVO4 (neodymium-doped yttrium vanadate) crystal with a linear polarized absorption characteristic; an output end surface of the laser gain medium is cut into a Brewster angle along the axis, and a pumping end provided with a transmission surface, of the laser gain medium is taken as the back cavity mirror. The laser has the advantages of simple and compact structure, high output pulse stability and the like, and is easy to realize modular production.
Description
Technical field
The invention belongs to the all-solid state laser technical field, particularly a kind of pulse laser of realizing the electric-optically Q-switched output of subnanosecond by control pumping light characteristic.
Background technology
High-peak power, narrow pulsewidth Q-switch solid laser and since with the matter interaction process in the heat-affected zone that produces little, make that machining damage is few, precision is high; Simultaneously, with respect to femtosecond and picosecond laser, have working (machining) efficiency height, fast, the lower-cost advantage of speed.Therefore, the laser of 1 nanosecond of pulsewidth or subnanosecond has broad application prospects in fields such as Laser Micro-Machining manufacturing, nonlinear optics, electrooptical countermeasures, laser three-dimensional scanning, DNA analysis.
The high-peak power laser of nanosecond order, the general employing transfers the Q mode to produce.Adopt the initiatively electric-optically Q-switched mode of modulation, can obtain the relative pulse laser narrower, active controllable of pulsewidth and export.At present, the output pulse width of domestic typical solid Q-switched laser is usually greater than 3ns, and the method that reduces chamber length that generally adopts still can not satisfy the requirement that realizes 1 nanosecond even subnanosecond output fully.Analyze and initiatively transfer the principal element that influences pulsewidth in the Q structure, optimize and realize required gain media and the cavity configuration of narrow pulse width laser output, control pumping polarization state and spatial distribution are the key issues that realizes the subnanosecond Q impulse.
Summary of the invention
The purpose of this invention is to provide a kind of sustainer towards control, compact conformation, the narrow pulsewidth of high light beam quality, high-peak power laser.
To achieve these goals, the present invention has taked following technical scheme: a kind of laser of realizing subnanosecond accent Q output by control pumping light characteristic, it has comprised the pumping source 1 that sets gradually along the direction of propagation of light, fiber coupling device 2, Effect of Back-Cavity Mirror 3, gain medium 4, electric-optically Q-switched element 5, output coupling mirror 6, wherein Effect of Back-Cavity Mirror 3, gain medium 4, electric-optically Q-switched element 5 and output coupling mirror 6 are formed resonant cavity.
Described pumping source 1 is a semiconductor laser, and output π is to the pump light of polarization.
The invention is characterized in: described cavity length is less than 30mm, described semiconductor laser connects fiber coupling device 2, the pump light polarization state and the spatial distribution of gain medium 4 incided in control, the Nd:YVO of described gain medium 4 for having the linear polarization absorption characteristic
4Crystal, the output end face of described gain medium cuts into Brewster's angle along a axle, and the pumping end of described gain medium 4 leads to light face plated film as Effect of Back-Cavity Mirror,
The electro-optical Q-switch of described electric-optically Q-switched element 5 is DKDP, RTP, BBO or LN, and it is electric-optically Q-switched that pressure type is moved back in the electric-optically Q-switched employing of described electric-optically Q-switched element 5.
Described outgoing mirror 6 is coated with transmitance greater than 70% optical thin film.
The logical light face of the pumping end of described gain media 4 is as Effect of Back-Cavity Mirror 3 places plating 808nm AR film and 1064nm HR film.
Because adopt above technical scheme, the present invention compares with existing electric-optically Q-switched narrow pulse width laser device, has following four advantages: 1) adopt optical fiber coupling, π polarized pump, improved the gain of pumping efficiency and laser system; 2) Nd:YVO
4Crystal cuts into Brewster's angle along a axle, only makes the π polarisation that is parallel to the c axle produce vibration, realizes polarization vibration output, effectively suppresses self-oscillation, and has saved the polarizer; 3) it is electric-optically Q-switched that pressure type is moved back in employing, compares with adding pressure type and saved quarter wave plate, further shortens the long and reduction insertion loss in chamber; 4) according to the laser physics theory, we obtain, and the simple shortening chamber length that relies on can not realize 1 nanosecond even subnanosecond output fully, and improving the laser system gain is key issue.Incide the pump light polarization state and the spatial distribution of gain medium 4 by control, improve pumping efficiency, stable resonator, realized the narrow pulsewidth electric-optically Q-switched laser output of 1 nanosecond even magnitude of subnanosecond.That laser of the present invention has is simple and compact for structure, be easy to modularization production, output pulse stability advantages of higher.
Description of drawings
Fig. 1 is the structural representation of the embodiment of the invention
Fig. 2 is the laser pulse shape figure that adopts the pulse duration 1ns that the present invention obtains
Fig. 3 is the laser pulse light intensity distribution map that adopts the pulse duration 1ns that the present invention obtains
Among Fig. 1,1 pumping source, 2 fiber coupling devices, 3 Effect of Back-Cavity Mirror, 4 gain mediums, 5 electric-optically Q-switched elements, 6 output coupling mirrors.
Embodiment
The present invention is described in detail below in conjunction with drawings and Examples:
As shown in Figure 1, the present invention includes: adopt semiconductor laser as pumping source 1, pump light enters gain medium 4 through Effect of Back-Cavity Mirror 3 after assembling through fiber coupling device 2, and the laser generation of formation forms laser output through electric-optically Q-switched element 5 and outgoing mirror 6.The laser resonant cavity that constitutes in the present embodiments of Effect of Back-Cavity Mirror 3, gain medium 4, electric-optically Q-switched element 5 and outgoing mirror 6 wherein.
Resonant cavity is the non-rectilinear die cavity of length less than 30mm.
The Nd:YVO of described gain medium 4 for having the linear polarization absorption characteristic
4Crystal, the logical light face of the pumping end of gain media 4 plates 808nm AR film and 1064nm HR film as Effect of Back-Cavity Mirror 3.The output end face of gain media 4 cuts into Brewster's angle along a axle, the π polarization (E//c) that its light field E vector is parallel to optical axis of crystal direction and E vector have notable difference perpendicular to the spectral characteristic of the σ polarization (E ⊥ c) of optical axis direction, the strongest absorption and radiation all occur in π to.Pumping source 1 output π conforms to the polarization absorption characteristic of gain media 4 to the pump light of polarization, needn't place in the resonant cavity that polarizer can have been realized partially, the analyzing effect.
Laser generation in the resonant cavity produces π to the strongest linearly polarized laser output through electric-optically Q-switched element 5 and outgoing mirror 6, has avoided the influence to beam quality of unnecessary thermal birefringence effect.Outgoing mirror 6 lateral surface plated films make transmitance greater than 70%.
The material that above-mentioned gain media adopts is the Nd:YVO with linear polarization absorption characteristic
4Crystal.
The material of above-mentioned electric-optically Q-switched switch can be DKDP, RTP, BBO or LN.
Above-mentioned outgoing mirror can be plated on the exiting surface of electrooptic crystal with the form of optical thin film.
Can also be provided with in the above-mentioned resonant cavity and realize main the non-linear of wavelength laser output in addition that shake, as frequency-doubling crystals such as KTP, LBO.
Described fiber coupling device 2 is formed by the Transmission Fibers that links to each other with pumping source 1 with along two convex lens of optical transmission direction.
The principle of foregoing invention is: incide the pump light polarization state and the spatial distribution of gain medium 4 by control, can improve pumping efficiency, stable resonator, further press narrow pulsewidth.
Gain media 4 is Nd:YVO
4(vanadic acid yttrium) crystal, it belongs to tetragonal crystal system, zircon structure (ZrSiO
4), positive uniaxial crystal is the natural birefringence crystal, has very strong polarization absorption and polarized radiation characteristic.The absorption coefficient of its π direction polarization master absworption peak is greater than the σ polarization, and halfwidth is about more than three times of σ polarization, and the absorption coefficient of π direction is up to 31.1cm
-1, almost be five times of Nd:YAG.In fiber coupling device 2, use polarization maintaining optical fibre, can reduce the fevering sodium effect of 1 polarization light output of semiconductor pumping sources to greatest extent.With Nd:YVO
4Pump light polarization state that the polarization absorption characteristic of crystal is consistent and better space distribute, and can make full use of the inverted population in the gain media, improve the laser system gain, realize narrow pulsewidth.
Nd:YVO for the LD pumping
4Laser, π polarized pump not only help improving pump absorption efficient, and help improving laser emission efficient.Gain media 4 absorbs π behind the pump light of polarization, is output as π to linearly polarized light through the Brewster face.At this moment, add λ/4 voltages for electro-optical Q-switch 5, π, produces the pi/2 phasic difference and postpones through electrooptic crystal 5 to linearly polarized light, becomes circularly polarized light.Circularly polarized light reflects through outgoing mirror 6 and passes through electrooptic crystal 5 once more, becomes linearly polarized light again.The relative initial condition in polarization direction of the linearly polarized light of this moment has been rotated 90 °, becomes σ to polarised light, and the Brewster face that incides gain media 4 will be reflected, thereby realizes shut the gate.When the λ that removes electro-optical Q-switch 5/4 voltages, π is constant by electrooptic crystal 5 rear polarizer directions to polarised light, can vibrate in the chamber and export, and realizes opening the door.
The present invention has simplified the structure of traditional electro-optical Q-switching laser resonant cavity, improved the laser system gain, reduced in the chamber to insert loss, to have shortened the chamber long, by control pumping polarization state of light and spatial distribution, solved raising laser system this key issue that gains, can realize that the subnanosecond of 0.5ns～2ns is transferred Q output.
The present invention is through testing repeatedly and optimizing, the long 20mm in the chamber, and outgoing mirror transmitance 70%, extinction ratio during repetition rate 10Hz, obtained the 1064nm laser output of pulse duration 1ns greater than 1000: 1, and its waveform is as shown in Figure 2.
The laser pulse light intensity of the pulse duration 1ns that the present invention obtains distributes as shown in Figure 3, single pulse energy 0.32mJ, the about 0.3MW of peak power, beam quality M
2＜2.
That laser of the present invention has is simple and compact for structure, make that small product size is little, output pulse stability advantages of higher, is suitable for modularization production.
Claims (5)
1. one kind is passed through the laser that control pumping light characteristic is realized subnanosecond accent Q output, comprised the pumping source (1) that sets gradually along the direction of propagation of light, fiber coupling device (2), Effect of Back-Cavity Mirror (3), gain medium (4), electric-optically Q-switched element (5), output coupling mirror (6), wherein Effect of Back-Cavity Mirror (3), gain medium (4), electric-optically Q-switched element (5) and output coupling mirror (6) are formed resonant cavity; It is characterized in that: described cavity length is less than 30mm, described semiconductor laser connects fiber coupling device (2), the pump light polarization state and the spatial distribution of gain medium (4) incided in control, the Nd:YVO of described gain medium (4) for having the linear polarization absorption characteristic
4Crystal, the output end face of described gain medium (4) cuts into Brewster's angle along a axle, and the logical light face plated film of the pumping end of described gain medium (4) is as Effect of Back-Cavity Mirror.
2. a kind of laser of transferring Q to export by control pumping light characteristic realization subnanosecond according to claim 1, it is characterized in that: described pumping source (1) is the semiconductor laser of output π to the pump light of polarization.
3. a kind of laser of realizing subnanosecond accent Q output by control pumping light characteristic according to claim 1, it is characterized in that: the electro-optical Q-switch of described electric-optically Q-switched element (5) is DKDP, RTP, BBO or LN, and it is electric-optically Q-switched that pressure type is moved back in the electric-optically Q-switched employing of described electric-optically Q-switched element (5).
4. according to claim 1ly a kind ofly realize that by control pumping light characteristic subnanosecond transfers the laser of Q output, it is characterized in that: described outgoing mirror (6) is coated with transmitance greater than 70% optical thin film.
5. a kind of laser of transferring Q to export by control pumping light characteristic realization subnanosecond according to claim 1, it is characterized in that: the logical light face of the pumping end of described gain media (4) is as Effect of Back-Cavity Mirror 3 plating 808nmAR film and 1064nm HR films.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102882112A (en) * | 2012-10-14 | 2013-01-16 | 北京工业大学 | Polarization Q-switched laser device for improving quality of output light beam |
| CN102882111A (en) * | 2012-10-14 | 2013-01-16 | 北京工业大学 | Q-switched laser device for improving output stability |
| CN108767649A (en) * | 2018-06-14 | 2018-11-06 | 清华大学 | Disresonance subnanosecond pulse laser |
| WO2019109235A1 (en) * | 2017-12-05 | 2019-06-13 | 大族激光科技产业集团股份有限公司 | All solid-state laser light source device |
| CN110364924A (en) * | 2019-08-09 | 2019-10-22 | 福建科彤光电技术有限公司 | A kind of electro-optical Q-switching laser |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101719626A (en) * | 2009-11-06 | 2010-06-02 | 华中科技大学 | Electric-optically Q-switched laser resonator |
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2011
- 2011-07-22 CN CN 201110207779 patent/CN102299469A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101719626A (en) * | 2009-11-06 | 2010-06-02 | 华中科技大学 | Electric-optically Q-switched laser resonator |
Non-Patent Citations (1)
| Title |
|---|
| 《 laser sensing and imaging; and biological and medical applications of photonics sensing and imaging,SPIE》 20110526 fengchi, ..etc 1 nanosecond E-O Q-switched Nd:YVO4 laser 附图1-2、摘要，正文第2-4部分 1-5 第8192卷, * |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102882112A (en) * | 2012-10-14 | 2013-01-16 | 北京工业大学 | Polarization Q-switched laser device for improving quality of output light beam |
| CN102882111A (en) * | 2012-10-14 | 2013-01-16 | 北京工业大学 | Q-switched laser device for improving output stability |
| WO2019109235A1 (en) * | 2017-12-05 | 2019-06-13 | 大族激光科技产业集团股份有限公司 | All solid-state laser light source device |
| CN110663145A (en) * | 2017-12-05 | 2020-01-07 | 大族激光科技产业集团股份有限公司 | All-solid-state laser light source device |
| US11005229B2 (en) | 2017-12-05 | 2021-05-11 | Han's Laser Technology Industry Group Co., Ltd. | All solid-state laser light source device |
| CN110663145B (en) * | 2017-12-05 | 2021-10-12 | 大族激光科技产业集团股份有限公司 | All-solid-state laser light source device |
| CN108767649A (en) * | 2018-06-14 | 2018-11-06 | 清华大学 | Disresonance subnanosecond pulse laser |
| CN110364924A (en) * | 2019-08-09 | 2019-10-22 | 福建科彤光电技术有限公司 | A kind of electro-optical Q-switching laser |
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Application publication date: 20111228 |