CN102299256A - Magnetoelectric random memory cell and magnetoelectric random memory comprising same - Google Patents
Magnetoelectric random memory cell and magnetoelectric random memory comprising same Download PDFInfo
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- CN102299256A CN102299256A CN2011102005773A CN201110200577A CN102299256A CN 102299256 A CN102299256 A CN 102299256A CN 2011102005773 A CN2011102005773 A CN 2011102005773A CN 201110200577 A CN201110200577 A CN 201110200577A CN 102299256 A CN102299256 A CN 102299256A
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Abstract
The invention provides a magnetoelectric random memory cell which comprises the following parts: a bottom electrode layer; a ferroelectric oxide layer formed on the bottom electrode layer; a ferromagnetic free layer formed on the ferroelectric oxide layer; a separating layer formed on the ferromagnetic free layer; and a ferromagnetic fixing layer formed on the separating layer, wherein the ferromagnetic free layer, the separating layer and the ferromagnetic fixing layer construct an interlayer structure with a magnetic resistance effect, the ferromagnetic free layer and the bottom electrode layer are taken as an upper electrode and a lower electrode of the ferroelectric oxide layer respectively and exert electric field on the ferroelectric oxide layer, a direction of the electric field is perpendicular to the ferroelectric oxide layer, and under an effect of the electric field, the ferroelectric oxide layer controls magnetization direction rotation in the ferromagnetic free layer through magnetoelectric coupling to change resistance of the interlayer structure. The invention also provides a memory comprising the magnetoelectric random memory cell. According to the invention, information data is written through the electric field, and the magnetoelectric random memory has the advantages of nonvolatility, low write-in power dissipation, high storage density and the like.
Description
Technical field
The present invention relates to technical field of memory at random, particularly a kind of magnetoelectricity random memory unit and have its magnetoelectricity random asccess memory.
Background technology
The ferroelectric random memory is a kind of nonvolatile semiconductor memory member with advantages such as writing speed are fast, low in energy consumption, and it utilizes the iron electric polarization direction of ferroelectric material to realize storage.Magnetic RAM also is a kind of nonvolatile memory, and it utilizes magneto resistance effect to realize storage.
The problem that the ferroelectric random memory exists is, along with the prolongation of time, the remanent polarization of ferroelectric thin film diminishes gradually in the memory, causes memory can't correctly distinguish " 0 " and " 1 " two kinds of polarized states and lost efficacy.
The operation principle of magnetic RAM is, the electric current that utilizes bit line and data wire to pass through produces magnetic field, make the magnetized state in the ferromagnetic free layer rotate by magnetic field, make the direction of magnetization angle between ferromagnetic free layer and the ferromagnetic fixed layer change, thereby in the magnetic channel structure, produce high and low two resistance states, corresponding to two states in " 0 ", " 1 " of data.The problem that magnetic RAM exists is, raising along with storage density, dwindling of memory cell volume, because there is the magnetic defective in ferromagnetic free layer, in actual mechanical process, need stronger magnetic field to make and the direction of magnetization counter-rotating of ferromagnetic free layer this means that the electric current that needs to increase on bit line and the holding wire increases magnetic field, thereby the power consumption that causes writing data increases, and easily the store status of adjoining memory cell is exerted an influence.
In order to overcome the shortcoming of magnetic RAM, a kind of spinning moment transfer-magnetic RAM has been proposed, utilize spinning current directly the ferromagnetic free layer in the magnetic random memory cell to be carried out the state write operation, and need be not produce magnetic field as indirect means, thereby can solve the problem that magnetic RAM improves density refractory, simultaneously also can reduce power consumption to a certain extent, but, write owing to adopt current system to carry out state, the predictable power consumption of this memory will be higher than adopt that voltage system carries out that state writes such as the ferroelectric random memory, memories such as magnetoelectricity random asccess memory.
Summary of the invention
Purpose of the present invention is intended to solve at least one of above-mentioned technological deficiency.
For this reason, first purpose of the present invention is to provide a kind of magnetoelectricity random memory unit, this magnetoelectricity random memory unit utilizes the magnetoelectric effect principle, regulates and control the direction of magnetization of ferromagnetic free layer by the electric field that is applied on the ferroelectric oxide layer, thereby makes resistance change.
Second purpose of the present invention is to provide a kind of magnetoelectricity random asccess memory with above-mentioned magnetoelectricity random memory unit.
For achieving the above object, the embodiment of first aspect present invention proposes a kind of magnetoelectricity random memory unit, comprising: bottom electrode layer; Be formed on the ferroelectric oxide layer on the described bottom electrode layer; Be formed on the ferromagnetic free layer on the described ferroelectric oxide layer; Be formed on the separator on the described ferromagnetic free layer; With the ferromagnetic fixed layer that is formed on the described separator, wherein, described ferromagnetic free layer, described separator and described ferromagnetic fixed layer constitute the sandwich with magneto resistance effect, described ferromagnetic free layer and described bottom electrode layer are respectively as the upper/lower electrode of described ferroelectric oxide layer and described ferroelectric oxide layer is applied electric field, the direction of wherein said electric field is perpendicular to described ferroelectric oxide layer, and described ferroelectric oxide layer rotates so that the resistance variations of described sandwich by the direction of magnetization in the described ferromagnetic free layer of magneto-electric coupled control under described effect of electric field.
In one embodiment of the invention, described magnetoelectricity random memory unit also comprises: one or more layers antiferromagnetic pinning layer, described antiferromagnetic pinning layer is arranged on the top of described ferromagnetic fixed layer, is used for fixing the direction of magnetization in the described ferromagnetic fixed layer.
In one embodiment of the invention, described ferroelectric oxide layer comprises any in the following material: barium titanate, lead zirconate titanate, ferrous acid bismuth, bismuth titanates-lead titanates, PMN-PT and lead zinc niobate-lead titanates with (011) or (111) orientation.
In one embodiment of the invention, described ferromagnetic fixed layer and/or described ferromagnetic free layer comprise one or more in the following material: iron, nickel, cobalt, dilval, ferro-cobalt, Perminvar and other contain the alloy of iron, cobalt, nickel.
In one embodiment of the invention, described separator is made of nonmagnetic substance.Particularly, described nonmagnetic substance comprises copper, chromium, contains alloy, aluminium oxide and the magnesium oxide of copper and chromium.
In one embodiment of the invention, described antiferromagnetic pinning layer comprises any in the following material: ferromanganese, nickel-manganese, platinum manganese alloy and other contain the alloy material of manganese.
The embodiment of second aspect present invention has proposed a kind of magnetoelectricity random asccess memory, comprising: the magnetoelectricity random memory unit array comprises the magnetoelectricity random memory unit of a plurality of first aspect present invention embodiment; A plurality of access transistor, each described access transistor links to each other with the bottom electrode layer of each described magnetoelectricity random memory unit, and each described access transistor has source electrode, grid and drain electrode; Many word lines, every described word line links to each other with the grid of each described access transistor, is used to control the source electrode of described access transistor and the break-make between the drain electrode; Many printed lines, described printed line is parallel with described word line, and every described printed line links to each other with the bottom electrode layer of each described magnetoelectricity random memory unit; Many first bit lines, described first bit line is vertical with described word line, and every described first bit line links to each other with the ferromagnetic fixed layer of each described magnetoelectricity random memory unit; Many second bit lines, described second bit line is vertical with described word line, and every described second bit line links to each other with the source electrode of each described access transistor; And many interconnection lines, an end of every described interconnection line links to each other with the drain electrode of each described access transistor, and the other end of every described interconnection line links to each other with the ferromagnetic free layer of each described magnetoelectricity random memory unit.
In one embodiment of the invention, when carrying out write operation, described word line is controlled the source electrode and drain electrode conducting of corresponding access transistor, and in that to apply voltage between corresponding second bit line and the printed line magneto-electric coupled to take place between described ferroelectric oxide layer and described ferromagnetic free layer, the direction of magnetization of controlling described ferromagnetic free layer deflects.
In one embodiment of the invention, when carrying out read operation, read the stored information of described magnetoelectricity random memory unit by described second bit line and described first bit line.
In one embodiment of the invention, described magnetoelectricity random asccess memory also comprises: with the bit line select circuitry that described many word lines link to each other, be used for the magnetoelectricity random memory unit of selected described magnetoelectricity random asccess memory.
The embodiment of the invention adopts many iron property magnetoelectricity complex thin film structure as the magnetoelectricity major part of storage element device at random, utilize the magneto-electric coupled effect between ferroelectric oxide layer and the ferromagnetic free layer, by electric field the direction of magnetization in the ferromagnetic free layer is modulated, realized with electric field writing information data, compare with magnetic RAM, reduced and write power consumption, simultaneously owing to there be not of the interference of the space behavior in write current magnetic field to adjoining memory cell, can dwindle the distance between the memory cell, improve storage density.That the magnetoelectricity random asccess memory that the embodiment of the invention proposes has is non-volatile, write that power consumption is supported, memory cell is disturbed little characteristics each other, and can be improved storage density.In addition, the embodiment of the invention uses bottom electrode layer and ferromagnetic free layer to apply vertical electric field as the upper/lower electrode of ferroelectric oxide layer, and is rationally distributed, saved the space, reduced the number of employed connection line in the magnetoelectricity random asccess memory simultaneously.
Aspect that the present invention adds and advantage part in the following description provide, and part will become obviously from the following description, or recognize by practice of the present invention.
Description of drawings
Above-mentioned and/or additional aspect of the present invention and advantage are from obviously and easily understanding becoming the description of embodiment below in conjunction with accompanying drawing, wherein:
Fig. 1 is the structural representation of the magnetoelectricity random memory unit of an embodiment of invention;
Fig. 2 is the structural representation of the magnetoelectricity random memory unit of another embodiment of the present invention;
Fig. 3 is the structural representation of the magnetoelectricity random asccess memory of one embodiment of the invention;
Fig. 4 is the structural profile schematic diagram of the magnetoelectricity random asccess memory of one embodiment of the invention, and wherein Fig. 4 a illustrates the main cross-section structure of looking under the state, and Fig. 4 b illustrates a left side and looks cross-section structure under the state;
Fig. 5 is the circuit diagram of the magnetoelectricity random asccess memory of one embodiment of the invention;
Fig. 6 is for showing the sequential chart that the magnetoelectricity random memory unit is carried out the information write operation; And
Fig. 7 be in the one embodiment of the invention magnetoelectricity random memory unit with the change curve of resistance under the electric field action.
Description of reference numerals:
1-magnetoelectricity random memory unit 2-bottom electrode layer
3-ferroelectric oxide layer 4-ferromagnetic free layer
5-separator 6-ferromagnetic fixed layer
The antiferromagnetic pinning layer of the 7-interlayer 8-of mechanism
9-access transistor 10-source electrode
11-drain electrode 12-grid
13-word line 14-printed line
The 15-first bit line 16-second bit line
The 17-interconnection line
Embodiment
Describe embodiments of the invention below in detail, the example of described embodiment is shown in the drawings, and wherein identical from start to finish or similar label is represented identical or similar elements or the element with identical or similar functions.Below by the embodiment that is described with reference to the drawings is exemplary, only is used to explain the present invention, and can not be interpreted as limitation of the present invention.
In description of the invention, term " on ", close the orientation of indications such as D score, " left side ", " right side " or position is based on orientation shown in the drawings or position relation, only be the present invention for convenience of description rather than require the present invention therefore can not be interpreted as limitation of the present invention with specific orientation structure and operation.
Describe structure and method below with reference to accompanying drawings in detail according to the embodiment of the invention.
The present invention mainly is the resistance variations by magnetoelectric effect principle control complex thin film structure unit, utilizes electric current to produce that write operation is carried out in magnetic field and the excess power consumption that causes and to problems such as adjacent unit exert an influence thereby overcome existing magnetic RAM.In order more to be expressly understood the present invention, below magnetoelectric effect is simply introduced.Magnetoelectric effect refers to many coupling effects that cause under the External Electrical Field that applying the material magnetic moment changes.Many iron property magnetic electric compound material refers to a class will have the new material that ferroelectric material and ferromagnetic material are combined according to certain composite construction, and this class new material has magnetoelectric effect.For many iron property magnetoelectricity laminated film, can adopt such as chemical preparation process such as multiple physical preparation method such as pulsed laser deposition, magnetron sputtering and sol-gel processes to be prepared, under suitable technology process condition, can make it have magnetoelectric effect.2009, people such as the J.M.Hu of Tsing-Hua University utilize the mode of calculation of thermodynamics confirmed lower floor for ferroelectric oxide, the magnetoelectricity double-layer compound film of upper strata for the ferrimag film in, by ferroelectric oxide is applied electric field, also can cause the direction of magnetization of ferrimag layer to deflect in thin film planar, this phenomenon is due to the typical magneto-electric coupled effect.In January, 2011, people such as the Wu Tao of Univ California-Los Angeles USA are at Ni/[011]-observe along with PMN-PT being applied electric field action in the PMN-PT monocrystalline system perpendicular to the single-crystal surface direction, deflection has taken place in the direction of magnetization of Ni in the Ni thin film planar, this is the model experiment illustration of magnetoelectric effect.
As shown in Figure 1, be the structural representation of magnetoelectricity random memory unit 1 according to an embodiment of the invention.This magnetoelectricity random memory unit 1 adopts the structural shape of multi-layer compound film, and in the present embodiment, described multi-layer compound film structure comprises bottom electrode layer 2, ferroelectric oxide layer 3, ferromagnetic free layer 4, separator 5 and ferromagnetic fixed layer 6 from bottom to top.
Described ferromagnetic free layer 4, separator 5 and ferromagnetic fixed layer 6 common formation sandwiches 7, sandwich 7 has giant magnetoresistance effect or tunnel magneto-resistance effect, when the direction of magnetization in the direction of magnetization in ferromagnetic free layer 4 and the ferromagnetic fixed layer 6 had different angles between the two respectively, sandwich 7 pairing resistance also had nothing in common with each other.
Described bottom electrode layer 2 and ferromagnetic free layer 4 are as the upper and lower electrode of ferroelectric oxide layer 3 and ferroelectric oxide layer 3 is applied electric field, and the direction of the electric field that applies is perpendicular to the plane of multi-layer compound film.Ferroelectric oxide layer 3 forms the different deflections corresponding with the information that writes electric field by the direction of magnetization in the magneto-electric coupled control ferromagnetic free layer 4 under electric field action.Because the existence of tunnel magneto-resistance effect, the resistance of sandwich 7 also just form the storage of the variation corresponding with electric field information and then the information of realization.
The present invention adopts the major part of many iron property magnetoelectricity laminated film as magnetoelectricity random memory unit 1, utilize the magneto-electric coupled effect between ferroelectric oxide layer 3 and the ferromagnetic free layer 4, by electric field the direction of magnetization in the ferromagnetic free layer 4 is modulated, realized with electric field writing information data, compare with magnetic RAM of the prior art, reduced and write power consumption, simultaneously owing to there be not of the interference of the space behavior in write current magnetic field to adjoining memory cell, can dwindle the distance between the memory cell, improve storage density.And electrode being set at the two ends up and down of ferroelectric oxide layer 3, layout is more reasonable.
As the preferred embodiments of the present invention, as shown in Figure 2, in magnetoelectricity random memory unit 1, can above ferromagnetic fixed layer 6, form the antiferromagnetic pinning layer 8 that one or more layers is used for fixing the direction of magnetization in the ferromagnetic fixed layer 6.Because the pinning effect of antiferromagnetic pinning layer 8 can guarantee that the direction of magnetization in the pinned magnet fixed bed 6 can not reversed by the magnetic field of generations such as bit line on every side and data wire.
According to one embodiment of present invention, described ferroelectric oxide layer 3 is preferred but be not limited only to adopt a kind of material in the materials such as barium titanate, lead zirconate titanate, ferrous acid bismuth, bismuth titanates-lead titanates, PMN-PT and lead zinc niobate-lead titanates with (011) or (111) orientation to form.
According to one embodiment of present invention, described ferromagnetic fixed layer 6 and/or ferromagnetic free layer 4 are preferred but be not limited only to adopt a kind of material that iron (Fe), nickel (Ni), cobalt (Co), dilval (NiFe), ferro-cobalt (CoFe), Perminvar (NiFeCo) or other contain in the alloy of Fe, Co, Ni to form.
According to one embodiment of present invention, described separator 5 adopts nonmagnetic substances to constitute, and is preferred but be not limited only to adopt copper (Cu), chromium (Cr), the alloy that contains Cu and Cr, aluminium oxide (Al
2O
3) and magnesium oxide (MgO) in a kind of material form.
According to one embodiment of present invention, described antiferromagnetic pinning layer is preferred but be not limited only to adopt ferromanganese (FeMn), nickel-manganese (NiMn), platinum manganese alloy (PtMn) and other alloy materials that contains Mn to form.
In addition, described bottom electrode layer 2 can use in the present technique field known metal or oxide material to form.
According to one embodiment of present invention, the present invention also provides a kind of magnetoelectricity random asccess memory that comprises above-mentioned magnetoelectricity random memory unit 1.As shown in Figure 5, this magnetoelectricity random asccess memory comprises a plurality of magnetoelectricity random memory units 1, and vertical first bit line 15 and second bit line 16, a plurality of access transistor 9 and the many interconnection lines 17 of the parallel printed line 14 of many word lines 13, many and described word line 13, many and described word line 13 and printed line 14.
More specifically, can be referring to shown in Fig. 3 and Fig. 4 (Fig. 4 a, Fig. 4 b), word line 13 links to each other with the grid 12 of access transistor 9, is used to control the source electrode 10 of access transistor 9 and the break-make between 11 of draining; Second bit line 16 links to each other with the source electrode 10 of access transistor 9; One end of interconnection line 17 links to each other with the drain electrode 11 of access transistor 9, and the other end links to each other with the bottom electrode layer 2 of magnetoelectricity random memory unit 1; When being connected with high level signal on word line 13, the voltage signal between second bit line 16 and the printed line 14 can act directly on the ferroelectric oxide layer 3 of magnetoelectricity random memory unit 1; Wherein, the high level signal that is connected with on the word line 13 refers to the signal above the required threshold voltage of mutual conduction between source electrode 10 that can make access transistor 9 and the drain electrode 11.
The voltage signal that writes this magnetoelectricity random memory unit 1 applies by second bit line 16 and printed line 14; The circuit that reads the memistor variable signal is connected on second bit line 18 and first bit line 15; The circuit that different magnetoelectricity random memory units 1 in the magnetoelectricity random asccess memory are selected is connected on the word line 13.
The mentioned magnetoelectricity random asccess memory of the embodiment of the invention can deposit preparation, for example film preparations such as physical vapor deposition (PVD), chemical vapor deposition (CVD), photoetching, etching and wiring etc. by technology and the method that adapts with semi-conductor industry known in the field.Certainly, this magnetoelectricity random asccess memory part also can deposit preparation by other the physics or the method for manufacturing thin film of chemistry.
During the write operation of memory cell, at first on described word line 13, apply high level voltage, make the source electrode 10 of access transistor 10 and the mutual conduction between 11 that drains.According to writing the data difference, on second bit line 16 and printed line 14, apply and write voltage, writing voltage should be greater than the critical switching voltage Ucr of ferroelectric oxide layer 3 in the magnetoelectricity random memory unit 1, this voltage data is relevant with ferroelectric oxide layer 3, ferromagnetic free layer 4 selected different materials and size, can obtain by the memory cell structure actual measurement for preparing.For example, be " 1 ", then on second bit line 16, apply and write voltage, keep 0V voltage on the printed line 14 if write data.Ferroelectric oxide layer 3 writes under the voltage effect and takes place magneto-electric coupledly between the ferromagnetic free layer 4 at this, makes the direction of magnetization of ferromagnetic free layer 4 deflect.Be " 0 " if write data, then on printed line 14, apply and write voltage, on second bit line 16, keep 0V voltage.The direction of magnetization of ferromagnetic free layer 4 is replied original state that parallels with ferromagnetic fixed layer 6 direction of magnetizations.
Particularly, as shown in Figure 6, during t1, if the data that write are " 1 ", the voltage with second bit line 16 rises to Vs so, if the data that write are " 0 ", the voltage of second bit line 16 is maintained 0 so.During the t2 of ablation process, the voltage of word line 13 is risen to the threshold voltage Vg of access transistor 9, second bit line 16 and ferromagnetic free layer 4 are communicated with, if the data that write are " 1 ", the voltage Vs between ferromagnetic free layer 4 and the bottom electrode layer 2 then, if the data that write are " 0 ", then the voltage between ferromagnetic free layer 4 and the bottom electrode layer 2 is 0, and ferroelectric oxide layer 3 is kept original state.During the t3 of ablation process, apply a pulse voltage for printed line 14, the pulse voltage size is Vs, if the data that write are " 1 ", then the voltage between ferromagnetic free layer 4 and the bottom electrode layer 2 is 0, if the data that write are " 0 ", then the voltage between ferromagnetic free layer 4 and the bottom electrode layer 2 is-Vs.During the t4 of ablation process, the voltage of printed line 14 drops to 0, if the data that write are " 1 ", then the voltage of second bit line 16 is reduced to 0, if the data that write are " 0 ", then the voltage of second bit line 16 is maintained 0.During the t5 of ablation process, the connection that the voltage of word line 13 is reduced to 0, the second bit line 16 and ferromagnetic free layer 4 disconnects, and once complete ablation process finishes.
The read operation of memory cell then is direct measuring resistance between first bit line 15 and second bit line 16, and the state that resistance is high is state " 1 ", otherwise then is " 0 ".
In one embodiment of the invention, also comprise the bit line select circuitry that links to each other with word line, be used for the magnetoelectricity random memory unit of word-select memory.
In read operation, by existing method of measuring resistance between first bit line 15 and second bit line 16 resistance between first bit line 15 and second bit line 16 is measured, the voltage of word line 13 under the selected magnetoelectricity random memory unit that reads 1 is risen to the threshold voltage Vg of access transistor 9, second bit line 16 and ferromagnetic free layer 4 are communicated with the resistance of the sandwich 7 of the selected random memory unit that reads 1 in then measured resistance position.
Mode below by embodiment is described further magnetoelectricity random memory unit structure of the present invention.
Preparation ferroelectric oxide layer 3 is for having the lead zinc niobate-lead titanates (PZN-PT) of (001) orientation, deposition comprises the nickel spin valve structure of nickel (Ni) ferromagnetic free layer 4 of thick the having of 5nm (001) orientation, utilize the length of the multi-layer compound film structure of ferromagnetic free layer 4 that lithographic technique obtains, separator 5, ferromagnetic fixed layer 6 to be 64nm, width is 64nm.Apply the voltage perpendicular to the film length direction in ferroelectric oxide layer 3, Fig. 7 is the Changing Pattern of the resistance change rate of sandwich 7 in this system with ferroelectric oxide layer 3 suffered electric field strength, critical switch electric field U in this system
CrBe 1.1kV/cm.
As shown in Figure 7, apply voltage (printed line 14 voltages are higher than U when at first the embodiment sample being carried out negative sense
Cr, second bit line, 16 voltages are 0), sample resistance is taking place from the sudden change of low resistance state to high-impedance state above the critical voltage place; Continue to increase voltage in the direction, resistance states is constant.Sample still remains on the high-impedance state state after voltage is reduced to zero.When applying voltage at second bit line 16, printed line 14 remains under 0 the condition, surpass critical switching voltage after, the sample resistance states sports low resistance state by original high-impedance state, continues to increase voltage and then keeps this low resistance state.After voltage is reduced to zero, sample still remains on the low resistance state state, because no matter under forward still is the reverse voltage effect, cancel that the resistance states of embodiment sample can be maintained behind the voltage, this has shown that this random memory unit 1 has the non-volatile of storage.
The embodiment of the invention adopts many iron property magnetoelectricity complex thin film structure as the magnetoelectricity major part of storage element device at random, utilize the magneto-electric coupled effect between ferroelectric oxide layer and the ferromagnetic free layer, by electric field the direction of magnetization in the ferromagnetic free layer is modulated, realized with electric field writing information data, compare with magnetic RAM, reduced and write power consumption, simultaneously owing to there be not of the interference of the space behavior in write current magnetic field to adjoining memory cell, can dwindle the distance between the memory cell, improve storage density.That the magnetoelectricity random asccess memory that the embodiment of the invention proposes has is non-volatile, write that power consumption is supported, memory cell is disturbed little characteristics each other, and can be improved storage density.In addition, the embodiment of the invention uses bottom electrode layer and ferromagnetic free layer to apply vertical electric field as the upper/lower electrode of ferroelectric oxide layer, and is rationally distributed, saved the space, reduced the number of employed connection line in the magnetoelectricity random asccess memory simultaneously.
Although illustrated and described embodiments of the invention, for the ordinary skill in the art, be appreciated that without departing from the principles and spirit of the present invention and can carry out multiple variation, modification, replacement and modification that scope of the present invention is by claims and be equal to and limit to these embodiment.
Claims (11)
1. a magnetoelectricity random memory unit is characterized in that, comprising:
Bottom electrode layer;
Be formed on the ferroelectric oxide layer on the described bottom electrode layer;
Be formed on the ferromagnetic free layer on the described ferroelectric oxide layer;
Be formed on the separator on the described ferromagnetic free layer; With
Be formed on the ferromagnetic fixed layer on the described separator,
Wherein, described ferromagnetic free layer, described separator and described ferromagnetic fixed layer constitute the sandwich with magneto resistance effect, described ferromagnetic free layer and described bottom electrode layer are respectively as the upper/lower electrode of described ferroelectric oxide layer and described ferroelectric oxide layer is applied electric field, the direction of wherein said electric field is perpendicular to described ferroelectric oxide layer, and described ferroelectric oxide layer rotates so that the resistance variations of described sandwich by the direction of magnetization in the described ferromagnetic free layer of magneto-electric coupled control under described effect of electric field.
2. magnetoelectricity random memory unit according to claim 1 is characterized in that, also comprises:
One or more layers antiferromagnetic pinning layer, described antiferromagnetic pinning layer is arranged on the top of described ferromagnetic fixed layer, is used for fixing the direction of magnetization in the described ferromagnetic fixed layer.
3. magnetoelectricity random memory unit according to claim 1 and 2, it is characterized in that described ferroelectric oxide layer comprises any in the following material: barium titanate, lead zirconate titanate, ferrous acid bismuth, bismuth titanates-lead titanates, PMN-PT and lead zinc niobate-lead titanates with (011) or (111) orientation.
4. magnetoelectricity random memory unit according to claim 1 and 2, it is characterized in that described ferromagnetic fixed layer and/or ferromagnetic free layer comprise one or more in the following material: Fe, Ni, Co, NiFe, CoFe, NiFeCo or contain the alloy material of Fe, CO, Ni.
5. magnetoelectricity random memory unit according to claim 1 and 2 is characterized in that described separator is made of nonmagnetic substance.
6. magnetoelectricity random memory unit according to claim 5 is characterized in that, described nonmagnetic substance comprises: copper, chromium, the alloy material that contains copper and chromium, aluminium oxide and magnesium oxide.
7. magnetoelectricity random memory unit according to claim 2 is characterized in that, described antiferromagnetic pinning layer comprises any in the following material: ferromanganese, nickel-manganese, platinum manganese alloy and other contain the alloy material of manganese.
8. a magnetoelectricity random asccess memory is characterized in that, comprising:
Magnetoelectricity random memory unit array, described magnetoelectricity random memory unit array comprise a plurality of as each described magnetoelectricity random memory unit among the claim 1-7;
A plurality of access transistor, each described access transistor links to each other with the bottom electrode layer of each described magnetoelectricity random memory unit, and each described access transistor has source electrode, grid and drain electrode;
Many word lines, every described word line links to each other with the grid of each described access transistor, is used to control the source electrode of described access transistor and the break-make between the drain electrode;
Many printed lines, described printed line is parallel with described word line, and every described printed line links to each other with the bottom electrode layer of each described magnetoelectricity random memory unit;
Many first bit lines, described first bit line is vertical with described word line, and every described first bit line links to each other with the ferromagnetic fixed layer of each described magnetoelectricity random memory unit;
Many second bit lines, described second bit line is vertical with described word line, and every described second bit line links to each other with the source electrode of each described access transistor; And
Many interconnection lines, an end of every described interconnection line links to each other with the drain electrode of each described access transistor, and the other end of every described interconnection line divides and links to each other with the ferromagnetic free layer of each described magnetoelectricity random memory unit.
9. magnetoelectricity random asccess memory according to claim 8, it is characterized in that, when carrying out write operation, described word line is controlled the source electrode and drain electrode conducting of corresponding access transistor, and in that to apply voltage between corresponding second bit line and the printed line magneto-electric coupled to take place between described ferroelectric oxide layer and described ferromagnetic free layer, the direction of magnetization of controlling described ferromagnetic free layer deflects.
10. magnetoelectricity random asccess memory according to claim 8 is characterized in that, when carrying out read operation, reads the stored information of described magnetoelectricity random memory unit by described second bit line and described first bit line.
11. each described magnetoelectricity random asccess memory is characterized in that according to Claim 8-10, also comprises:
With the bit line select circuitry that described many word lines link to each other, be used for the magnetoelectricity random memory unit of selected described magnetoelectricity random asccess memory.
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102683581A (en) * | 2012-04-24 | 2012-09-19 | 清华大学 | Voltage-adjustable reluctance-variable random memory cell and random memory |
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| CN102683581B (en) * | 2012-04-24 | 2014-09-24 | 清华大学 | Voltage-adjustable reluctance-variable random memory cell and random memory |
| CN102683581A (en) * | 2012-04-24 | 2012-09-19 | 清华大学 | Voltage-adjustable reluctance-variable random memory cell and random memory |
| CN102768854A (en) * | 2012-06-21 | 2012-11-07 | 北京有色金属研究总院 | Magnetoelectric composite multi-state memory unit and preparation method thereof |
| CN102768854B (en) * | 2012-06-21 | 2015-07-29 | 有研稀土新材料股份有限公司 | A kind of magnetoelectric composite multi-state memory unit and preparation method thereof |
| CN104240754A (en) * | 2013-06-05 | 2014-12-24 | 爱思开海力士有限公司 | Resistance memory device and apparatus, fabrication method thereof,operation method thereof, and system having the same |
| CN105374934A (en) * | 2015-12-01 | 2016-03-02 | 中电海康集团有限公司 | Stress-assisted spin-transfer torque magnetic random access memory, preparation method thereof, and usage method thereof |
| CN105374934B (en) * | 2015-12-01 | 2018-02-06 | 中电海康集团有限公司 | A kind of stress assisted spin transfer moment of torsion magneto-resistor random access memory and its preparation, application method |
| CN109690675A (en) * | 2016-06-28 | 2019-04-26 | 赢世通股份有限公司 | A kind of novel word line pulse wiring method can be applied to magnetotunneling knot |
| CN109690675B (en) * | 2016-06-28 | 2022-11-04 | 赢世通股份有限公司 | Novel word line pulse writing method applicable to magnetoelectric tunnel junction |
| CN106328807A (en) * | 2016-11-08 | 2017-01-11 | 郑州轻工业学院 | Electrically writable magnetic read magneto-electricity storage unit and manufacturing method |
| CN109087995B (en) * | 2017-06-14 | 2021-04-13 | 中电海康集团有限公司 | Perpendicular magnetization MTJ device and STT-MRAM |
| CN109087995A (en) * | 2017-06-14 | 2018-12-25 | 中电海康集团有限公司 | Perpendicular magnetization MTJ device and STT-MRAM |
| CN107946454A (en) * | 2017-11-17 | 2018-04-20 | 南方科技大学 | A kind of magnetic random memory and its wiring method, read method and preparation method |
| CN107946454B (en) * | 2017-11-17 | 2020-09-18 | 南方科技大学 | Magnetic random access memory and writing method, reading method and preparation method thereof |
| CN110580995A (en) * | 2018-06-07 | 2019-12-17 | 清华大学 | Ferromagnetic material, preparation method thereof and sensor |
| CN110071115A (en) * | 2019-04-28 | 2019-07-30 | 中国科学院微电子研究所 | A kind of ferroelectric memory, production method and operating method |
| CN112993149A (en) * | 2021-02-06 | 2021-06-18 | 浙江驰拓科技有限公司 | Storage unit |
| CN113422601A (en) * | 2021-08-23 | 2021-09-21 | 上海灵动微电子股份有限公司 | Voltage conversion high-level isolation unit based on magnetic tunnel junction |
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