CN102231471B - Nano-cavity laser of molecule-doped thin film layer with electroexcitation - Google Patents
Nano-cavity laser of molecule-doped thin film layer with electroexcitation Download PDFInfo
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- CN102231471B CN102231471B CN201110129801A CN201110129801A CN102231471B CN 102231471 B CN102231471 B CN 102231471B CN 201110129801 A CN201110129801 A CN 201110129801A CN 201110129801 A CN201110129801 A CN 201110129801A CN 102231471 B CN102231471 B CN 102231471B
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- thin layer
- electroexcitation
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Abstract
The invention, which belongs to the laser field, relates to a nano-cavity laser of a molecule-doped thin film layer with electroexcitation. The laser comprises a p-surface electrode, a substrate, an electroluminescent medium, a molecule-doped thin film layer, an n-surface electrode, and a nanowire structure. The electroluminescent medium, the molecule-doped thin film layer, the n-surface electrode, and the nanowire structure are arranged on the surface of the substrate successively; and the underneath of the substrate is plated with the p-surface electrode. According to the invention, surface plasma is provided by a metal electrode; an electric field with strong localization is formed by utilizing a mixing structure of metal, low-dielectric constant thin film layer and electroluminescent medium. Multi-energy-level molecules are doped in an insulating layer; multi-energy-level molecule system is excited to absorb a photon; and transition is formed and another photon is emitted. Direct coupling is carried out on the emitted photon, so that surface plasmon is formed; and the surface plasmon is transmitted and lased along the metal surface of the nanowire. According to the invention, present problems including difficulty in electroexcitation, great difficult in making technology, high cost, and difficulty in promotion are effectively solved.
Description
Technical field
The invention belongs to field of lasers, particularly a kind of electroexcitation molecular dopant thin layer is received cavity laser.
Background technology
Development and maturation along with the nanometer micro-processing technology; Laser is just more and more faster advancing in miniaturization; Based on surface plasmons (Surface Plasmon Polariton, sub-wavelength microcavity SPP), receive the chamber laser because it is highly sensitive, volume is little, concentration of energy and by more applications in carrying out fields such as bioprobe, information stores, photometry calculation, near field optic imaging, nanoimprinting technology and molecule operating technology; And along with development of science and technology, growing field constantly increases the demand of microminiature LASER Light Source.
Because the restriction of optical wavelength and the influence of diffraction effect, the conventional laser on the ordinary meaning can't accomplish laser energy is compressed to sub-wavelength magnitude even nanometer scale on some dimensions.Though a lot of at present successful photon is fettered and handles of work about the photonic crystal aspect; But be limited to photonic crystal itself and just be in wavelength dimension; And require spatially periodically to repeat, the volume that this has just increased device greatly can't really be fabricated into nanometer scale with entire device; And complex process, all very high to the symmetry of structure with the periodicity requirement.
In order on certain dimension, to realize littler energy of electromagnetic field compression, the sub-wavelength that the surface plasma excimer of being introduced by metal and surface plasma wave form and receive the chamber by broad research.Surface plasma excimer makes electric field strength sharply decay on the both direction of metal, and forms the surface plasma-wave that can only propagate along the metal surface, is to realize sub-wavelength at present and receive the best means in chamber.
Because the loss that absorption brought of metal influence, surface plasma wave generally all can not be grown Distance Transmission; And because the wave vector of surface plasma wave follows the wave vector in the vacuum not match, thereby can not directly be excited.Existing transmission means mainly is through introducing gain media, remedy loss with gain, so increase the transmission range of surface plasma wave and realize swashing penetrate luminous; The mode of excitation of existing surface plasma wave mainly contains methods such as prism excites, grating excites, strong-focusing beam excitation.But these three kinds of exciting methods, it is complicated to make that not only the laser volume becomes very greatly, technology becomes, and can only adopt the photoexcitation mode.Therefore how to solve the problem of electroexcitation, design that a kind of manufacture craft is simple, stable performance, cost are low, be prone to promote to receive the cavity laser device imperative.
Summary of the invention
In order to address the above problem, the invention provides electroexcitation molecular dopant thin layer and receive cavity laser, can effectively solve existing electroexcitation difficulty, the manufacture craft difficulty is big, cost is high, promote problems such as difficulty.
The technical scheme that technical solution problem of the present invention adopts is following:
Electroexcitation molecular dopant thin layer is received cavity laser, comprises p face electrode, substrate, electroluminescent medium, molecular dopant thin layer, n face electrode and nano thread structure; Be coated with p face electrode below grow successively above the substrate electroluminescent medium, molecular dopant thin layer, n face electrode and the nano thread structure, substrate.
Manufacture craft of the present invention is simple relatively, stable performance, low, the easy popularization of cost; Utilize metal that surface plasma is provided; And can make electrode; Utilize material and architectural characteristic to form to receive the chamber, utilize the multiple level molecule absorption photon that mixes to form population inversion, utilize electroluminescent material that gain is provided.
Description of drawings
Fig. 1 receives the three-dimensional structure diagram of cavity laser for electroexcitation molecular dopant thin layer of the present invention.
Among the figure: 1, p face electrode, 2, substrate, 3, electroluminescent medium, 4, the molecular dopant thin layer, 5, n face electrode, 6, nano thread structure.
Embodiment
Elaborate below in conjunction with the accompanying drawing specific embodiments of the invention.
As shown in Figure 1: electroexcitation molecular dopant thin layer is received cavity laser, comprises p face electrode 1, substrate 2, electroluminescent medium 3, molecular dopant thin layer 4, n face electrode 5 and nano thread structure 6; Be coated with p face electrode 1 below grow successively above the substrate 2 electroluminescent medium 3, molecular dopant thin layer 4, n face electrode 5 and the nano thread structure 6, substrate 2.
The loss that the 4 pairs of electromagnetic fields of described molecular dopant thin layer are propagated is very little, and the dielectric constant of thin layer is less than the dielectric constant of electroluminescent medium, and the ratio d/n of the refractive index n of its thickness d and thin layer is less than 50nm, and cavity configuration is received in formation.The molecule that mixes in the thin layer is a kind of multiple level molecule, and this molecule can absorb the photon that electroluminescent medium 3 is sent, and can produce the sharp light that penetrates of particle beams counter-rotating formation.
Said electroluminescent medium 3 can be that all less electroluminescent material and the structure of photonic absorption---semi-conducting material, solid electric electroluminescent material, electroluminescent organic material, quantum-dot structure, quantum well structure etc. all can satisfy condition and requirement.
The metal material of said nano thread structure 6, in chosen material, require very little to the absorption and the scattering of surface plasma wave, this imaginary part that just requires this metal relative dielectric constant between 0 to 5, like gold, silver, metal materials such as aluminium.
The total length of said n face electrode 5 and nano thread structure 6 should be the integral multiple of surface plasma wave half-wavelength, and the width requirement of nano thread structure 6 is half the less than surface plasma wave length.
Electroexcitation molecular dopant thin layer is received the cavity laser structure and is utilized material epitaxy growing technology and sol-gal process to be made.Described substrate 2 is GaAs materials, and electroluminescent medium 3 is by lower waveguide layer n-Al
0.1Ga
0.9As, last ducting layer p-Al
0.1Ga
0.6As and active layer In
0.2Ga
0.8The multi-quantum pit structure of As or GaAs is formed, and said structure is accomplished by epitaxial growth, and this will provide the electroluminescence wavelength is the photon of 980nm.Molecular dopant thin layer 4 is to adopt sol-gel method to make the silica membrane that Yb-Er mixes altogether, and film thickness 20nm can know that according to calculating this film will become the natural chamber of receiving; Yb-Er will form population inversion after mixing the photon that the multiple level molecular system absorbs 980nm altogether, swash the photon that penetrates wavelength 1550nm, and this photon directly coupling becomes surface plasma wave and along receiving the cavity configuration propagation.And then, prepare p face electrode 1 and n face electrode 5 at the upper surface of molecular dopant thin layer 4 and the bottom surface of substrate 2 through after the substrate thinning, and prepare nano thread structure 6 with the method for focused-ion-beam lithography at last, entire device completes.Wherein the width of nano thread structure 6 is 100nm, and the thickness of n face metal electrode 5 and nano wire 6 is 200nm, and the gross thickness of structure 3 is 200nm.
Claims (4)
1. electroexcitation molecular dopant thin layer is received cavity laser, it is characterized in that this laser comprises p face electrode (1), substrate (2), electroluminescent medium (3), molecular dopant thin layer (4), n face electrode (5) and nano thread structure (6); Grow successively above the said substrate (2) electroluminescent medium (3), molecular dopant thin layer (4) and n face electrode (5); Go up making nano thread structure (6) at said n face electrode (5); Be coated with p face electrode (1) below the substrate (2); The dielectric constant of said molecular dopant thin layer (4) is less than the dielectric constant of electroluminescent medium (3), and the ratio d/n of the refractive index n of the thickness d of electroluminescent medium (3) and molecular dopant thin layer (4) is less than 50nm.
2. electroexcitation molecular dopant thin layer as claimed in claim 2 is received cavity laser, it is characterized in that, the molecule that mixes in the said molecular dopant thin layer (4) is a kind of multiple level molecule.
3. electroexcitation molecular dopant thin layer as claimed in claim 1 is received cavity laser, it is characterized in that the metal material of said nano thread structure (6) is gold, silver or aluminium.
4. electroexcitation molecular dopant thin layer as claimed in claim 1 is received cavity laser; It is characterized in that; The total length of said n face electrode (5) and nano thread structure (6) is the integral multiple of surface plasma wave half-wavelength, and the width of nano thread structure (6) is half the less than surface plasma wave length.
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| CN102231471B true CN102231471B (en) | 2012-09-19 |
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| CN102659070B (en) * | 2012-05-28 | 2015-05-27 | 西安交通大学 | Integrated photon chip and preparation method thereof |
| CN102931580B (en) * | 2012-11-26 | 2015-04-22 | 中国科学院长春光学精密机械与物理研究所 | Bragg reflector coupling surface plasma laser light source |
| CN103022899A (en) * | 2012-12-18 | 2013-04-03 | 上海电机学院 | Method for generating surface plasmon laser by current pumping |
| CN111190245B (en) * | 2020-02-28 | 2023-07-04 | 中国科学院上海技术物理研究所 | Planar funnel microcavity for realizing deep sub-wavelength photon mode volume of epitaxial material |
| CN111313215B (en) * | 2020-03-02 | 2021-11-16 | 陕西科技大学 | Organic solid laser based on metal nano core-shell structure-metal thin film plasma composite structure and preparation method |
| CN114447764B (en) * | 2020-11-02 | 2023-04-18 | 中国科学院苏州纳米技术与纳米仿生研究所 | Adjustable surface plasmon laser |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101702047A (en) * | 2009-10-23 | 2010-05-05 | 中国科学院物理研究所 | Method for remotely exciting single photon source by utilizing surface plasma |
| CN101882752A (en) * | 2010-06-28 | 2010-11-10 | 北京航空航天大学 | Surface plasma nanometer laser |
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| JP4463569B2 (en) * | 2004-01-14 | 2010-05-19 | パナソニック株式会社 | Laser equipment |
| US20090207869A1 (en) * | 2006-07-20 | 2009-08-20 | Board Of Trustees Of Michigan State University | Laser plasmonic system |
| JP4595007B2 (en) * | 2008-07-23 | 2010-12-08 | 株式会社東芝 | Optical waveguide system |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101702047A (en) * | 2009-10-23 | 2010-05-05 | 中国科学院物理研究所 | Method for remotely exciting single photon source by utilizing surface plasma |
| CN101882752A (en) * | 2010-06-28 | 2010-11-10 | 北京航空航天大学 | Surface plasma nanometer laser |
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