CN102208536B - Cyclic tri (methoxy substituted methyl isonitrile gold) nano and micro wire-based photoelectric device, preparation method and application - Google Patents
Cyclic tri (methoxy substituted methyl isonitrile gold) nano and micro wire-based photoelectric device, preparation method and application Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- BKZGPTBJZHVEHR-UHFFFAOYSA-N [Au].C[N+]#[C-] Chemical class [Au].C[N+]#[C-] BKZGPTBJZHVEHR-UHFFFAOYSA-N 0.000 title claims abstract description 7
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 title claims abstract description 7
- 125000004122 cyclic group Chemical group 0.000 title abstract 2
- 239000010931 gold Substances 0.000 claims abstract description 57
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 20
- 239000010703 silicon Substances 0.000 claims abstract description 20
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052737 gold Inorganic materials 0.000 claims abstract description 11
- 238000001704 evaporation Methods 0.000 claims abstract description 10
- 230000008020 evaporation Effects 0.000 claims abstract description 10
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 10
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 13
- -1 octadecyl trichlorosilane alkane Chemical class 0.000 claims description 8
- 238000006467 substitution reaction Methods 0.000 claims description 6
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 5
- 230000005669 field effect Effects 0.000 claims description 5
- SCYULBFZEHDVBN-UHFFFAOYSA-N 1,1-Dichloroethane Chemical group CC(Cl)Cl SCYULBFZEHDVBN-UHFFFAOYSA-N 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 229910000976 Electrical steel Inorganic materials 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 239000003960 organic solvent Substances 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 3
- 238000004090 dissolution Methods 0.000 claims 1
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 abstract description 33
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 abstract description 19
- 239000002904 solvent Substances 0.000 abstract description 15
- 239000000463 material Substances 0.000 abstract description 11
- 230000004044 response Effects 0.000 abstract description 11
- 230000003287 optical effect Effects 0.000 abstract description 10
- 239000004065 semiconductor Substances 0.000 abstract description 8
- 239000000758 substrate Substances 0.000 abstract description 5
- 238000012545 processing Methods 0.000 abstract description 2
- 230000002441 reversible effect Effects 0.000 abstract description 2
- PYJJCSYBSYXGQQ-UHFFFAOYSA-N trichloro(octadecyl)silane Chemical compound CCCCCCCCCCCCCCCCCC[Si](Cl)(Cl)Cl PYJJCSYBSYXGQQ-UHFFFAOYSA-N 0.000 abstract 2
- 230000005540 biological transmission Effects 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 24
- 229910052757 nitrogen Inorganic materials 0.000 description 12
- 238000012360 testing method Methods 0.000 description 12
- 239000008186 active pharmaceutical agent Substances 0.000 description 9
- 230000006870 function Effects 0.000 description 7
- 230000008859 change Effects 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 230000003993 interaction Effects 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 238000007738 vacuum evaporation Methods 0.000 description 3
- 229910052724 xenon Inorganic materials 0.000 description 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 3
- 238000007664 blowing Methods 0.000 description 2
- 238000004320 controlled atmosphere Methods 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000001338 self-assembly Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007306 functionalization reaction Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 150000004032 porphyrins Chemical class 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 238000010129 solution processing Methods 0.000 description 1
- 238000000935 solvent evaporation Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract
The invention particularly relates to a cyclic tri (methoxy substituted methyl isonitrile gold) nano and micro wire-based photoelectric device, a preparation method thereof and application of the device in a solvent atmosphere sensor and an optical switch. The device sequentially consists of a silicon substrate, a silicon dioxide insulating layer, an octadecyl trichlorosilane (OTS) modification layer, Au3A3 nano and micro wires, and a source electrode and a drain electrode prepared by gold evaporation, wherein a plurality of nano and micro wires are connected with two ends of a gold electrode. In the preparation process of the device, simple solution is used for processing; and the Au3A3 gold nano and micro wires with different sizes (diameters and lengths) can be obtained by using different kinds of solution. The device shows excellent hole transmission performance and high mobility in the air, has strong optical switch function, has sensitive, reversible and stable electrical signal response to the solvent atmospheres of ethanol, acetonitrile and the like, and has very considerable prospect in the application of future novel semiconductor materials.
Description
Technical field
The invention belongs to organic semiconducting materials self assembly and OFET (organic field effect tube) field of photoelectric devices, be specifically related to a kind of based on ring three (methoxy substitution methyl isonitrile gold) (abbreviation Au
3A
3) nano-micro wire photoelectric device, its preparation method and in the application of this device at aspect the solvent atmosphere transducer and optical switch aspect.
Background technology
Organic semiconducting materials has a wide range of applications at organic electroluminescent, field-effect transistor, solar cell, optical conductor device and the various fields such as micron sensing device of receiving, especially the organic nano and micro materials of one dimension: in the semiconductor device of functionalization, show more outstanding (J.Phys.Chem.B such as nano wire, nanometer rods etc., 2004,108,9574, Angew.Chem.Int.Ed.2005,44,1395 and Nature, 2001,409,66).Recently, some are about utilizing the one dimension organic functional material to prepare the report (Mater.Today of OFET device, 2008,11,38. and Adv.Mater.2006,18,65), although utilize the nano-micro wire of one dimension to prepare function element, most adopted the complexity such as vacuum evaporation, vapour deposition and the higher method of cost.So, how to utilize a kind of simple to operate, with low cost and fast the controlled one dimension nano and micro materials of method preparation size realize that then its function is a very important problem.In addition, the in the past self assembly of one dimension nano and micro materials mainly depends on the interactions such as pi-pi bond, hydrogen bond and Van der Waals force, and shorter mention Au
IAu
IDeng weak interaction between metal-metal.Therefore can effectively excavate out based on Au
IAu
IThe one dimension nano and micro materials that weak interaction is constructed, and this new material reasonably is applied to the focus that the fields such as OFET, optical switch and gas sensitization will become research now.
Summary of the invention
The present invention utilizes the solution processing mode, based on Au
IAu
IWeak interaction is constructed ring three (methoxy substitution methyl isonitrile gold) and (is called for short Au
3A
3, its structural formula is as follows) and one dimension nano-micro wire and then structure OFET photoelectric device.
The present invention has utilized the processing of simple solution in the preparation process of device, avoided the complicated methods such as traditional vacuum evaporation, sputter, vacuum vapor deposition.By the selection of different solutions, just can obtain the controlled Au of size (diameter and length)
3A
3Nano-micro wire.The present invention utilizes the Au of this simple method preparation
3A
3The micron devices mobility of receiving is high, stability is strong, has stronger light switch function, and methyl alcohol, acetonitrile equal solvent atmosphere there are sensitivity, reversible, stable electric response, can make the transducer of solvent atmosphere, and can be widely used in the research and development of following novel semiconductor material device.
The objective of the invention is to be achieved through the following technical solutions.At first we have synthesized Au with reference to known method (J.E.Parks, A.L.Balch, J.Organomet.Chem.1974,71,453.)
3A
3Secondly simple substance prepare a layer insulating by thermal oxidation at the bottom of the silicon wafer-based, grow nano-micro wire by solvent evaporation method in substrate again, and utilize mask plate evaporation simple substance gold as the electrode of conduction thereon, then prepared based on Au
3A
3The field-effect transistor of nano-micro wire (OFET) photoelectric device, and the functions such as its mobility, optical switch, solvent response are tested.
Of the present invention based on Au
3A
3The OFET device of nano-micro wire is characterized in that: successively by silicon base, silicon dioxide insulating layer, OTS (octadecyl trichlorosilane alkane) decorative layer, Au
3A
3Source electrode and the drain electrode of nano-micro wire, gold evaporation preparation form Au
3A
3Nano-micro wire is connected between source electrode and drain electrode.
Of the present invention based on Au
3A
3The preparation method of the OFET photoelectric device of nano-micro wire, its step is as follows:
1) on silicon base, prepares the silicon dioxide insulating layer of 200～300 nanometers by thermal oxidation process;
2) under vacuum condition, grow the octadecyl trichlorosilane alkane OTS decorative layer that thickness is 2～4 nanometers at the silicon dioxide insulating layer of silicon base;
3) in glass container, dissolve Au with a small amount of organic solvent (dichloroethanes or oxolane)
3A
3To 5 * 10
-4～2 * 10
-3Mol/L is with above-mentioned Au
3A
3Solution drip on the silicon base of the octadecyl trichlorosilane alkane OTS decorative layer of having grown, and place closed container until solution evaporation is done, thereby form many one dimension wire crystal, i.e. Au at the octadecyl trichlorosilane alkane OTS of silicon base decorative layer
3A
3Nano-micro wire;
4) utilization is mask plate with the figure (silicon steel) of source electrode and drain electrode shape complementarity, at the Au of silicon base
3A
3Gold layer preparation source electrode and the drain electrode of evaporation 30～40 nanometers on the nano-micro wire, obtaining source electrode and drain electrode spacing (raceway groove is wide) is 15～20 microns, Au
3A
3Nano-micro wire is connected in the OFET device at (raceway groove two ends) between source electrode and drain electrode.
What the system of test component mobility adopted is the serial and supporting shielding harness of Keithley 2636A, and test is carried out under constant humidity (the relative humidity 11% RH) condition at constant temperature (20 ℃).The OFET device is a kind of active device of controlling size of current between the source-drain electrode by regulating grid voltage, and the preparation in gold electrode district is at condition of high vacuum degree (2 * 10
-4～5 * 10
-4The Pa atmospheric pressure) under, utilize the method for traditional vacuum evaporation to obtain.
By changing dissolving Au
3A
3Solution, just can obtain the one dimension wire crystal of different size (diameter, length).For example use dichloroethane solution (1 * 10
-3Mol/L), can obtain the nano-micro wire of 100～500 microns of diameter 200～1500 nanometers and length; And when using THF (oxolane) solution (1 * 10
-3Mol/L), will obtain diameter is about 2～5 microns, length and is about 300～1000 microns nano-micro wire.The control temperature also is the key factor that guarantees to grow one dimension homogeneous nano-micro wire, and temperature should be controlled at about 20～25 ℃.
Use the CHI630C electrochemical workstation that the photoelectric device for preparing is carried out the conductivity test, during voltage constant on being added to the gold electrode district, utilize xenon lamp and monochromator to regulate and be radiated at based on Au
3A
3Light intensity on the nano-micro wire photoelectric device and emission wavelength can obtain the optical switch character curve of device; When voltage constant, pass into solvent atmosphere by carrier gas system, can obtain the curve that the signal of telecommunication changes with solvent atmosphere.Xenon lamp and monochromator not only emission wavelength are controlled, can also use the luminous intensity tester light intensity that it sends is tested.Need to prove, same device preparation method and method of testing not only can be used in based on Au
3A
3In the preparation of nano-micro wire photoelectric device and the test, can also be used in the preparation and test based on the photoelectric device of other organic photoelectric functional materials, such as phthalocyanine, porphyrin and Graphene etc.
Description of drawings
Fig. 1: the structural representation of OFET device of the present invention;
Wherein each component names is: 1, silicon base; 2, silicon dioxide insulating layer; 3, OTS decorative layer; 4, the Au of growth
3A
3Nano-micro wire; 5, drain electrode (negative pole); 6, source electrode (positive pole);
Fig. 2: the microphotograph of OFET device of the present invention, wherein: 4, the Au of growth
3A
3Nano-micro wire; 5, drain electrode (negative pole); 6, source electrode (positive pole);
Fig. 3: OFET device output characteristic curve of the present invention;
Fig. 4: OFET device transfer characteristic curve of the present invention;
Fig. 5: the electric current of photoelectric device of the present invention under 500nm illumination-time optical switch character curve;
Fig. 6: the electric current-time graph of photoelectric device of the present invention under the different light intensity irradiation;
Fig. 7: photoelectric device of the present invention is to the signal of telecommunication sensing curve of alcohol atmosphere;
Fig. 8: photoelectric device electric current of the present invention changes the collection of illustrative plates that presents linear relationship with concentration of alcohol;
Fig. 9: photoelectric device of the present invention is to the signal of telecommunication sensing curve of acetonitrile atmosphere.
Embodiment
The present invention is further elaborated below in conjunction with embodiment, rather than will limit the invention with this.
Embodiment 1: preparation Au
3A
3The test of nano-micro wire field-effect transistor (OFET) photoelectric device and mobility
1, preparation Au
3A
3Nano-micro wire OFET photoelectric device
As substrate, in substrate, obtain the silicon dioxide insulating layer of 200～300 nanometer thickness with silicon chip by thermal oxidation process.
The bottle cap that will be bonded at the silicon chip of silicon dioxide insulating layer 100 ml containers that dripped trace (15 microlitre) OTS (octadecyl trichlorosilane alkane) is inboard; OTS volatilizees voluntarily after placing 6h under the container vacuum condition, thereby grows the approximately OTS decorative layer of 2～4 nanometers of thickness at the silicon dioxide insulating layer of silicon base.
In glass container, dissolve Au with a small amount of dichloroethanes
3A
3To concentration be 1 * 10
-3Mol/L, drip above solution (5～20 microlitre) on the silicon chip of the OTS decorative layer of having grown and be paved with silicon chip surface, placing closed container slowly to volatilize about 12 hours until solution evaporation is done under 20 ℃ of conditions, (length is about 100～300 microns thereby the OTS decorative layer of observing in substrate grows the many mixed and disorderly one dimension wire crystal of direction, diameter is about 200～1500 nanometers), i.e. Au
3A
3Nano-micro wire.
In high vacuum (5 * 10
-4The Pa atmospheric pressure) under the condition, in length Au is arranged
3A
3On the silicon chip of nano-micro wire, utilization is mask plate with the silicon steel of source electrode and drain electrode shape complementarity, at Au
3A
3The gold electrode of evaporation 30～40 nanometers on the nano-micro wire, and then prepare source electrode and drain electrode is 15～20 microns OFET device thereby obtain raceway groove wide (spacing of source electrode and drain electrode), Au
3A
3Nano-micro wire is connected between source electrode and drain electrode.The structural representation of device as shown in Figure 1.The microphotograph of device as shown in Figure 2.
2, utilize Au
3A
3Micron OFET device of receiving is measured the material mobility
With Keithley 2636A instrument and supporting shielding harness by the OFET device made to Au
3A
3Nano-micro wire carries out the test of mobility.Size of current obtains source-drain current I between the grid voltage control source-drain electrode by regulating
DS～source-drain voltage V
DSCurve is again by calculating the mobility value of respective material.
Specifically, respectively the positive and negative polarities of the source-drain electrode district on device access Keithley 2636A instrument and place in the shielded box, the voltage that is added on the device gate electrode is set be-10 volts, under the state that shields, organic semiconductor is Au
3A
3Can form the conducting channel of a wedge shape between nano-micro wire and the interfacial dielectric layer, along with the increase of voltage, conducting channel just gradually to the source, drain electrode is near at last with it conducting, at this moment just formed electric current.Regulate gate voltage V
GNumerical value change, from-10 volts to 10 volts, change 5 volts at every turn, measure different gate voltage V
GLower source-drain voltage V
DSWith source-drain current I
DSVariation just obtained output characteristic curve, as shown in Figure 3.As source-drain current I
DSNo longer with source-drain voltage V
DSVariation and when occuring significantly to change, illustrate that electric current has reached its saturation region.Get that source-drain voltage is V in the zone of saturation
DS=50 volts, respectively with the gate voltage V of correspondence
GWith source-drain current I
DSJust obtained transfer characteristic curve as coordinate anyhow, as shown in Figure 4.The transfer characteristic curve maximum is that switch current ratio is 10 with the ratio of minimum current
3, the intersection point of tangent line and abscissa is cut-in voltage V
T, V
T=13V is again with every numerical value substitution saturation region mobility computing formula: I
DS=μ CW/2L (V
G-V
T)
2, wherein L is that the electrode raceway groove is long, and W is that the electrode raceway groove is wide, and C is the electric capacity of insulating barrier unit are, and μ is the saturation region mobility, calculates at last Au
3A
3The mobility of micro wire is about 2.25 * 10
-1Cm
2V
-1s
-1It is worth mentioning that, through many experiments, above-mentioned device shows extraordinary stability and repeatability.This result shows Au
3A
3Be a kind of good semi-conducting material, have considerable prospect in following novel semiconductor material application.
Embodiment 2:Au
3A
3Receive the mensuration of micron devices optical switch character
1, prepares Au with embodiment 1 step 1 method
3A
3Receive micron devices.
2, with electrochemical workstation the device of making is carried out the conductivity test, utilize xenon lamp and monochromator to regulate and be radiated at Au
3A
3Emission wavelength on the micron devices when the voltage constant at device two ends, is tested its electric current-time graph.Respectively two parts of the electrode district on the device are accessed respectively the positive and negative polarities of electrochemical workstation, the voltage that setting is added in the device two ends is 1.5 volts, under the state of dark, electric current is along with the straight line that is varied to of time, shown among Fig. 5 0～100 second at this moment; Be the incident illumination of 500 nanometers during at device surface when wavelength is arranged, electric current moment of device strengthens, shown among Fig. 5 100～250 seconds; And the intensity when electric current is got back to dark attitude when closing incident light.Regulate like this irradiation (opening) of incident light and close (pass), just obtained optical switch curve shown in Figure 5, device has been realized light switch function.And regulate the irradiation light of varying strength, and the degree of current response is also different, can find out in Fig. 6, and wherein when intensity is 80 microwatts/centimetres 2, the intensifying current maximum weakens also corresponding reducing of electric current along with luminous intensity.It is worth mentioning that, through the experiment of No. 4 switch light sources, above-mentioned device shows very fast response speed and goodish stability and repeatability.
Embodiment 3:Au
3A
3Receive the sensing determination of micron devices to alcohol atmosphere
1, prepares Au with embodiment 1 step 1 method
3A
3Receive micron devices.
2, with electrochemical workstation the device of making is carried out the conductivity test, under nitrogen environment, as carrier gas, coutroi velocity is 400cm with nitrogen
3/ min, alcohol solvent atmosphere is led to device surface under the blowing of nitrogen, the passing into and stop of controlled atmospher, can test component to the electric response (Fig. 7) of ethanol.The positive and negative polarities of two electrode access electrochemical workstations on the device, it is 1.5 volts that the voltage that is added in the device two ends is set respectively, and under the state that only has nitrogen to pass into, electric current is along with the straight line that is varied to of time, shown among Fig. 7 0～50 second at this moment.When the nitrogen with ethanol blew at device surface, electric current moment of device strengthened, and shown among Fig. 7 50～100 seconds, and the electric current that is blown into when only having nitrogen that stops ethanol being got back to original intensity.Regulate like this passing into (opening) and closing (pass) of ethanol, just obtained alcohol solvent electric response curve shown in Figure 7, device has been realized the sensing function of alcohol solvent like this.And alcohol solvent change in concentration and electric current present linear relationship as shown in Figure 8.Wherein it is worth mentioning that, through multiple switching experiment, the ratio of electric current reached 80～100 times when above-mentioned device showed very fast response speed and goodish stability and repeatability and ethanol and passes into and close.
Embodiment 4:Au
3A
3Receive the sensing determination of micron devices to acetonitrile atmosphere
1, prepares Au with embodiment 1 step 1 method
3A
3Receive micron devices.
2, with electrochemical workstation the device of making is carried out the conductivity test, under nitrogen environment, as carrier gas, coutroi velocity is 400cm with nitrogen
3/ min, acetonitrile solvent atmosphere is led to device surface under the blowing of nitrogen, the passing into and stop of controlled atmospher, can test component to the electric response (Fig. 9) of acetonitrile.The positive and negative polarities of two electrode access electrochemical workstations on the device, it is 1.5 volts that the voltage that is added in the device two ends is set respectively, and under the state that only has nitrogen to pass into, electric current is along with the straight line that is varied to of time, shown among Fig. 9 0～25 second at this moment.When the nitrogen with acetonitrile blew at device surface, electric current moment of device strengthened, and shown among Fig. 9 25～75 seconds, and the electric current that is blown into when only having nitrogen that stops acetonitrile being got back to original intensity.Regulate like this passing into (opening) and closing (pass) of acetonitrile, just obtained acetonitrile solvent electric response curve shown in Figure 9, device has been realized the sensing function of acetonitrile solvent like this.It is worth mentioning that, through the multiple switching experiment, above-mentioned device shows very fast response speed and goodish stability and repeatability.
Claims (2)
1. one kind based on ring three (methoxy substitution methyl isonitrile gold) Au
3A
3The preparation method of the photoelectric device of nano-micro wire, its step is as follows:
1) at the upper silicon dioxide insulating layer (2) for preparing 200～300 nanometers by thermal oxidation process of silicon base (1);
2) under vacuum condition, the silicon dioxide insulating layer (2) in silicon base (1) grows the octadecyl trichlorosilane alkane OTS decorative layer (3) that thickness is 2～4 nanometers;
3) in glass container, use organic solvent dissolution Au
3A
3To 5 * 10
-4～2 * 10
-3Mol/L is with Au
3A
3Solution drip in the silicon base (1) of the octadecyl trichlorosilane alkane OTS decorative layer (3) of having grown, and place closed container until solution evaporation is done, thereby the octadecyl trichlorosilane alkane OTS decorative layer (3) in silicon base (1) forms many one dimension wire crystal, i.e. Au
3A
3Nano-micro wire (4); Organic solvent is dichloroethanes or oxolane;
4) utilization is mask plate with the silicon steel of source electrode (6) and drain electrode (5) shape complementarity, the Au in silicon base (1)
3A
3Gold layer preparation source electrode (6) and the drain electrode (5) of upper evaporation 30～40 nanometers of nano-micro wire (4) obtain source electrode (6) and drain electrode (5) spacing is 15～20 microns, Au
3A
3Nano-micro wire (4) is connected in the field-effect transistor between source electrode and drain electrode.
2. as claimed in claim 1 a kind of based on ring three (methoxy substitution methyl isonitrile gold) Au
3A
3The preparation method of the photoelectric device of nano-micro wire is characterized in that: be 2 * 10
-4～5 * 10
-4The gold evaporation layer prepares source electrode (6) and drain electrode (5) under the Pa condition.
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