CN102197429A - Method and device for high density data storage - Google Patents
Method and device for high density data storage Download PDFInfo
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- CN102197429A CN102197429A CN2009801420657A CN200980142065A CN102197429A CN 102197429 A CN102197429 A CN 102197429A CN 2009801420657 A CN2009801420657 A CN 2009801420657A CN 200980142065 A CN200980142065 A CN 200980142065A CN 102197429 A CN102197429 A CN 102197429A
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- 238000000034 method Methods 0.000 title claims abstract description 40
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- 239000000126 substance Substances 0.000 claims description 115
- 238000004132 cross linking Methods 0.000 claims description 104
- 239000000523 sample Substances 0.000 claims description 42
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- 229920000642 polymer Polymers 0.000 claims description 30
- 125000000304 alkynyl group Chemical group 0.000 claims description 24
- 238000003860 storage Methods 0.000 claims description 22
- 230000008021 deposition Effects 0.000 claims description 19
- 238000001704 evaporation Methods 0.000 claims description 18
- 230000008020 evaporation Effects 0.000 claims description 18
- 125000003118 aryl group Chemical group 0.000 claims description 14
- 229920006260 polyaryletherketone Polymers 0.000 claims description 12
- UEXCJVNBTNXOEH-UHFFFAOYSA-N Ethynylbenzene Chemical group C#CC1=CC=CC=C1 UEXCJVNBTNXOEH-UHFFFAOYSA-N 0.000 claims description 10
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 10
- 229920006037 cross link polymer Polymers 0.000 claims description 9
- 239000004642 Polyimide Substances 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229920001721 polyimide Polymers 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000007788 liquid Substances 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 125000001931 aliphatic group Chemical group 0.000 claims description 2
- 150000001345 alkine derivatives Chemical class 0.000 claims description 2
- 238000000137 annealing Methods 0.000 claims description 2
- -1 aryl ether ketone Chemical class 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 239000010445 mica Substances 0.000 claims description 2
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- 125000000843 phenylene group Chemical class C1(=C(C=CC=C1)*)* 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 150000003839 salts Chemical class 0.000 claims 1
- 125000004426 substituted alkynyl group Chemical group 0.000 claims 1
- 239000013047 polymeric layer Substances 0.000 abstract description 23
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- 125000001118 alkylidene group Chemical group 0.000 description 2
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- AQBWMQFSISCNGJ-UHFFFAOYSA-N Cc(cc1)ccc1Oc(cc1)ccc1Oc(cc1)ccc1Oc1ccc(C)cc1 Chemical compound Cc(cc1)ccc1Oc(cc1)ccc1Oc(cc1)ccc1Oc1ccc(C)cc1 AQBWMQFSISCNGJ-UHFFFAOYSA-N 0.000 description 1
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- 206010024769 Local reaction Diseases 0.000 description 1
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Abstract
The present invention is directed to a method for producing a data storage medium on a surface of a substrate for storing data in the form of topographic features. The method comprises a first step wherein a crosslinking agent containing at least three alkyne groups is deposited on the surface of the substrate. In a second step the deposited cross linking agent is cured so as to obtain the data storage medium in the form of a crosslinked polymeric layer on the surface of the substrate. The invention is further directed to a data storage medium obtained by this method and a data storage device comprising this data storage medium.
Description
Technical field
The present invention relates to the high density data field of storage, relate more specifically to data storage medium, data-storage system and date storage method.
Background of invention
Present date storage method is operated with the 0.1-10 micron order.For the increasing information of storage in more and more littler space, increasing the density of data storage always.In order to reduce power consumption and to increase integrated circuit operation speed, be used to make the lithography technique of integrated circuit to littler size and denser imaging direction development.Along with data storage size increases, density increases and integrated circuit density increases, need to develop the composition of matter that is used for the storage medium of nanoscale operation.
Memory device based on atomic force microscope (AFM) principle storage data is disclosed in people such as P.Vettiger, IBM Journal Research Development, the 44th volume, No.3, in " The millipede-more than 1, the 000 tips for future AFM data storage " in March, 2000.Memory device has the read-write capability based on mechanical x-, the y-scanning of storage medium, and wherein probe array respectively has a tip (tip).In operation (association area of storage medium) process, probe and the parallel operation of each probe scanning.Storage medium comprises polymeric layer.Move along the polymeric layer surface with the way of contact at the tip that has 5-20 nanometer summit diameter separately.Make probe tip can contact the storage medium surface to realize contact mode by probe being applied little power.For this reason, probe comprises cantilever, has the tip in the end portion of cantilever.In polymeric layer, represent the position with impression mark or non-impression mark.In the process of equipment with read/write mode operation, when cantilever during along polymeric layer surperficial mobile, cantilever changes these landform response.
Be recorded in formation impression mark on the polymer surfaces by thermodynamics.This realizes with each probe of contact mode operation with regard to polymeric layer by heating.Most advanced and sophisticated heating realizes by the well heater of being devoted to write/form the impression mark.Polymeric layer is at the local local softening of its contact through the tip of heating.The result produces and for example has the tip impression of the nanometer grade diameter of (being used for impression forms) on layer.
Read also to finish by the thermodynamics notion.Use is devoted to read/respond to the heater heats probe of impression labeling process.Use the independent well heater is not connected and therefore heated probe not with the tip, perhaps heated probe but unlikely its continuous tip of heating that causes, promptly heating-up temperature is not high enough to softening polymeric layer, as write necessary.Thermoinduction is based on the following fact: the thermal conductance when probe is mobile in impression between probe and the storage medium changes, and is more effective in this case because heat is delivered in.Its consequence is the resistance that the temperature of well heater reduces and also change thus well heater.Measure this resistance variations then and be used as measuring-signal.
Use for such thermal probe storage, define the medium demand by the impression mechanics of polymkeric substance and the needs of restriction medium and tip layer.Preferably, glass transition temperature should be minimized, but polymkeric substance also should be heat-staple.The thermal stability of polymkeric substance realizes by the polymkeric substance that crosslinked and use have particular thermal stability.Crosslinked common generation needs high-tensile strength also therefore to cause the points wear that increases with the hard material that forms impression.For medium writing rate, can use higher temperature with power of minimizing and points wear.Owing to write temperature along with writing rate increases, between heat and power should be compromise for need being impossible with writing soon of its design maximum temperature operation cantilever heating element.
Therefore, need provide the method for preparing data storage medium, it is in harmonious proportion for the high crosslink density of medium wearing quality with for the conflicting requirement of the lower glass transition temperatures of soft write condition.
Summary of the invention
According to a first aspect of the invention, be provided at and prepare the method that is used for the data storage medium of terrain feature (topographic feature) form storage data on the substrate surface, it comprises the steps: that (a) deposits crosslinking chemical on substrate surface, and described crosslinking chemical comprises at least three alkynyls (promptly comprising at least three carbon-to-carbon triple bonds); (b) solidify the crosslinking chemical that deposits, prepare the modified surface of base material thus, thereby on substrate surface, obtain the data storage medium of crosslinked polymer layer form.
According to a first aspect of the invention, crosslinking chemical is deposited upon on the substrate surface.In the deposition crosslinking chemical or afterwards, the crosslinking chemical of deposition is solidified, obtain to comprise the layer of cure-crosslinking agent thus.This layer shows high crosslink density.In one embodiment, base material can be and for example comprises curable polymer, particularly in main polymer chain or have a supporting layer of the polymkeric substance of alkynyl in the end group of this polymkeric substance.In another embodiment, base material can be template, and the crosslinking chemical layer of curing can be by this template transfer to destination layer, particularly the polymerization destination layer.By respectively cure-crosslinking agent and crosslinking chemical layer, at least three alkynyl reconstruct to be forming periodic line, if this between molecule and be suitable for, provides strong chemical bond between molecule and the polymkeric substance as the supporting layer of base material.Therefore, according to the present invention, obtain to comprise the double layer material of thin, the duricrust that is deposited on/is transferred to soft bottom.
An embodiment according to a first aspect of the invention, by crosslinking chemical from the evaporation in source with as carrying out the deposition of crosslinking chemical on substrate surface to the small part deposition on the substrate surface of target.By using this technology, can be on base material with the thin layer polymer deposition; In solidifying processing procedure, do not observe the phenomenon of drying (owing to for example instability of the thin layer of 5 nano thickness).On the contrary, use other deposition process such as spin coating to cause the phenomenon of drying.Use unresolved this problem of surfactant that reduces the substrate surface energy; Can not avoid drying of spin on polymers.
Another embodiment according to a first aspect of the invention, crosslinking chemical is selected from ZR
3And/or ZR '
4The compound of structure.Z and Z ' expression syndeton part, particularly aromatics connect base, and its connection comprises the substituting group of alkynyl, and (Z has 3 substituent R and Z ' has at least 4 substituent R, and each substituent R comprises at least one alkynyl; Substituent R respectively with Z and Z ' covalent bonding).
For example, Z can be 1,3, the hexa-atomic aromatic ring or 1,2 that 5-replaces, the hexa-atomic aromatic ring that 4-replaces.In addition, the syndeton part can comprise more than an aromatic ring.For example, each of at least two rings can comprise at least two substituent R.For example, Z ' can comprise 2 via singly-bound or alkylidene-or hexa-atomic aromatic ring of connecting of arlydene-connection base or oxygen atom.For example, each of 2 hexa-atomic aromatic rings of described Z ' can be 3,5-replacement or 3, and 4-replaces aromatic ring.In addition, can comprise three aromatic rings, these at least three rings have the substituent R that at least one contains at least one alkynyl separately.
Alternately, Z and Z ' can be aliphatic syndeton part, particularly cause the structure division (Z has 3 substituent R and Z ' has 4 substituent R, and each substituent R comprises at least one alkynyl) of required special arrangement substituent R.
ZR
3And/or ZR '
4The substituent R of the crosslinking chemical of structure mutually at random independently expression comprise the structure division and the replacement of at least one alkynyl or do not replace aromatic structure part or hydrogen atom, perhaps by alkynyl and replacement or do not replace the aromatic structure part or hydrogen atom is formed.
Usually all substituent R are identical; The crosslinking chemical structure that polarity is lower causes crosslinking chemical to be easy to evaporation.
Preferably, syndeton part Z or Z ' expression
Wherein * is illustrated in the key between R and Z or the Z '.
Connection base L between two aromatic rings of syndeton part preferably represents oxygen, alkylidene or arlydene structure division.Alternately, L can be two singly-bounds between the aromatic ring.Preferably, alkylidene connects base and connects base as C (CH for the methylene that methylene connects base or replacement
3)
2
Preferably, the substituent R that comprises at least one alkynyl mutually at random independently expression comprise replacement alkynyl (promptly not comprising terminal alkynes) ,-or right-phenylene of replacing and/or the structure division of phenyl.Alternately, R represent by the alkynyl that replaces ,-structure division that or right-phenylene structure division of replacing and/or replacement or unsubstituted phenyl are formed.Preferred unsubstituted phenyl; The crosslinking chemical temperature stability that comprises substituted-phenyl is relatively poor.Substituent R also can comprise the phenylene structure division of two or more alkynyls and two or more-or right-replace.
Most preferably, substituent R expression independently at random mutually
Wherein * is illustrated in the key between R and Z or the Z '.
Crosslinking chemical ZR
3And/or ZR '
4' most preferably expression:
In another embodiment, used crosslinking chemical is transpirable under the temperature below 300 ℃.Under higher temperature, the crosslinking chemical that comprises alkynyl often tends to polymerization.Crosslinking chemical is more preferably under the temperature below 250 ℃ and be transpirable under 150-200 ℃ temperature most preferably.Under these temperature of 150-200 ℃, the ratio that has evaporated crosslinking chemical can obtain satisfied rate of sedimentation.
In an example, the crosslinking chemical of embodiment of the present invention advantageously has and is lower than about 900 daltonian molecular weight (for describing purpose of the present invention, dalton and gram/mole are used interchangeably).More preferably, crosslinking chemical has the daltonian molecular weight of 270-800.
In one embodiment of the invention, cross-linked polymer is deposited upon on the template surface.According to this embodiment, after solidifying, crosslinking chemical carries out following steps:
(c) modified surface (being the modified surface of template) of base material is contacted with the surface of destination layer.Obtain to comprise the assembly of base material with crosslinked polymer layer and the destination layer adjacent thus with modified surface.In step (d), insert the liquid into the environment of the assembly that in step (c), obtains.As a result, the crosslinking chemical layer that solidifies is transferred at least one adjacent area on the target surface.The selection of template surface is based on its surface roughness profile, and is preferably flawless relatively.The exposed surface of the crosslinking chemical layer of the curing of the double layer material (i.e. data storage medium layer on supporting layer) that obtains in step (d) shows and its identical flatness of template surface that contacts before.Described also that in WO 2007/113760 the data storage medium layer is transferred to the method for destination layer by template layer, be herein incorporated by reference its disclosure.
In an example, the template surface that uses in this embodiment has hydrophilic feature.Desirably, template surface comprises one of following surface: mica base material, flame annealing glass baseplate, the silicon oxide layer on silicon substrate and (100) surperficial perovskite base material.Further preferably the heating of the modified surface that makes in step (b) is carried out before in step (c).Desirable is that the liquid of introducing in step (d) comprises polar liquid.
In another example of this embodiment, obtain the cured layer of crosslinking chemical by the potpourri of deposition crosslinking chemical and comonomer in step (a).In step (b), the crosslinking chemical of deposition and the potpourri of comonomer are cured, make crosslinked polymeric layer thus.
Can use the compound that has at least two alkynyls as comonomer.Usually, comonomer shows the thermal stability similar to crosslinking chemical.For example, can use and have formula Z " R
2(" have 2 substituent R, each substituent R comprises at least one alkynyl to Z; Substituent R and Z " covalent bond) compound, wherein R as above defines (at compound ZR
3And Z ' R
4In)." expression connects the structure division of two substituent R to division center part Z, for example the expression biphenyl that has the aromatic ring of two substituent R (for example in 1 of two 6 rings, 3-or 1,4-position) or have two substituent R (for example 4,4 '-position).Ratio between crosslinking chemical and comonomer is preferably 100: 0 to 20: 80 (mole %).Preferably, the ratio of comonomer is at 50 moles below the %, more preferably at 20 moles below the %.
The method of this embodiment causes showing at two interlayers the double layer material on obvious border.The cure-crosslinking agent of thin layer directly is deposited on the surface of particular type, the surface of medium from this particular type might be transferred on the common target substrate.For example, the standard polymers of stablizing thick-layer can be spin-coated on the crosslinked layer.Can the sandwich construction of gained curing cross-linked layer and standard polymers be cured.Because the crosslinking chemical layer height that solidifies is crosslinked, and the molecular weight of standard polymers is quite high usually, do not observe the remarkable phase counterdiffusion of layer.
In another embodiment of the present invention, crosslinking chemical is deposited on the substrate surface, described base material is to comprise the supporting layer that one or more contain the crosslinkable polymer of alkynyl.These alkynyls of crosslinkable polymer can be included in the main polymer chain; Alternately, alkynyl also can be included in the end group of polymkeric substance.In this embodiment of the present invention, the cross-linker molecules of deposition arrives the surface of supporting layer, by diffusing into polymkeric substance, and finds crosslinked pairing person.Thus, their local cross-linking densities that improves, this makes double layer material not have obvious border at interlayer; On supporting layer, obtain data storage medium.
In an example, supporting layer comprises at least a poly aryl ether ketone polymer described in US 2007/0296101A1, the document is introduced as reference at this.In another example, supporting layer comprises at least a polyimide oligomers described in WO 2007/096359A2, the document is introduced as reference at this.Preferably, each of described poly aryl ether ketone polymer and/or polyimide oligomers has two ends, and each end has two or more phenyl structure divisions.For example, can use at the following poly aryl ether ketone polymer described in the US 2007/0296101A1:
Or
R wherein
1Be selected from:
R wherein
2Be selected from:
R wherein
3Be selected from poly-(fragrant acetylene), poly-(phenylacetylene base),
Wherein n is the integer of about 5-50.
In another embodiment, in the poly aryl ether ketone polymer of in US 2007/0296101A1, describing, R in following formula
2The 0-30% of structure division number
Or
Substituted by following structure division:
Use is used for R
2The raw mix of structure division comprises poly aryl ether ketone polymer synthetic of these structure divisions described in US 2007/0296101A1.
In a further example, supporting layer comprises at least a polyimide oligomers.For example, can use at the following polyimide oligomers described in the WO 2007/096359A2:
Wherein R ' is selected from:
R wherein " be selected from:
Wherein n is the integer of about 5-50.
As another example, can use at the following polyimide oligomers described in the WO 2007/096359A2:
E-R′-(A
1-A
2-A
3-...-A
N-)R″-R′-E
Wherein E is
A wherein
1, A
2, A
3... A
NIn each be independently selected from:
Wherein R ' and R are " as defined above;
R wherein " ' be
Wherein N is the integer more than or equal to 2.
In an example, the polymkeric substance that is included in the supporting layer (base material is respectively in the embodiment of template or polymerizable cross-linked polymer therein) has high-temperature stability and lower glass transition temperatures (TG).Preferably, glass transition temperature more preferably 100-180 ℃, most preferably is 100-150 ℃ less than 220 ℃.The glass transition temperature of the crosslinking chemical layer that solidifies is usually above the glass transition temperature of the polymkeric substance of supporting layer.Preferably, the difference of two glass transition temperatures is at least 50 ℃.
In another embodiment, at 330-450 ℃, preferred 350-450 ℃, most preferably carry out the curing of crosslinking chemical under 380-430 ℃ the temperature.
Usually, the step of the inventive method (a) and (b) generation simultaneously.When carrying out the evaporation of crosslinking chemical under than the low temperature of the temperature that is used for cure-crosslinking agent, the evaporation again of crosslinking chemical also takes place to have deposited at substrate surface.Yet, can observe the growth of cure-crosslinking agent layer together.
For cure-crosslinking agent, other component can be present in the zone of the surface of base material or base material neighbouring surface (be that supporting layer comprises polymkeric substance and the template that contains alkynyl respectively, the crosslinking chemical layer of curing can by template transfer to destination layer).These other components comprise the activator (for example free radical starting agent and light activating agent) that is used to begin polyreaction and molecule that helps processing or composition (for example adhesiving reinforcing agent, defoamer and stabilizing agent).
In an embodiment again, the thickness of the crosslinking chemical layer of curing is at least 5 nanometers.For being used as data storage medium, the thickness of 5-10 nanometer is normally enough.
Also can carry out the deposition of crosslinking chemical on substrate surface by other technology.Except from the source evaporation and being deposited on the target, also can use technology as plasma deposition.Yet, use plasma deposition can cause uncontrollable cross-linking reaction and be difficult to control whole process.
According to second aspect, what the invention still further relates to that a embodiment according to the inventive method aspect makes is used for data storage medium with terrain feature form storage data.
According to the third aspect, the present invention relates to introduce according to the data storage medium of second aspect and comprise that further at least one is used for the data storage device of the probe of the data of writing and/or reading to store at data storage medium.
The feature of one aspect of the present invention can be applicable to any others, and vice versa.
The accompanying drawing summary
Feature of the present invention is listed in appending claims.Yet, will also understand invention itself in conjunction with the accompanying drawings better by detailed description with reference to following illustrative embodiment, wherein:
Figure 1A to 1C has shown the structure and the operation of the tip assembly that is used for data storage device, and described data storage device comprises the data storage medium of embodiment of the present invention;
Fig. 2 is the axonometric drawing that waits of local probe storage array, and described local probe storage array comprises the data storage medium of embodiment of the present invention;
Fig. 3 has schematically shown the device that is used for crosslinking chemical evaporation and deposition;
Fig. 4 has shown an example of data storage medium;
Fig. 5 and Fig. 6 have shown the grid position that impresses in the low cross-linking polymkeric substance of the crosslinking chemical layer that has deposition and curing at the low cross-linking polymkeric substance with on this polymer surfaces respectively; And
Fig. 7 has shown the temperature-Li relation of impression position in having the low cross-linking polymkeric substance of different depth.
Detailed Description Of The Invention
Figure 1A to 1C has shown the structure and the operation of the tip assembly 100 that is used for data storage device, and described data storage device comprises the data storage medium of embodiment of the present invention.In Figure 1A, probe tip assembly 100 comprises U-shaped cantilever 105, and it has flexible member 105A and the 105B that is connected with supporting construction 110.The flexibility of element 105A and 105B makes cantilever 105 to do basic pivot motion round pivot 115.Cantilever 105 comprises the pressure head tip 120 that is fixed on the well heater 125, and well heater 125 is connected between flexible member 105A and the 105B.Flexible member 105A and 105B and well heater 125 conduct electricity, and the (not shown) that links to each other with electric wire in the supporting construction 110.In an example, flexible member 105A and 105B and pressure head tip 120 are formed by the silicon of high doped and have a low resistance, well heater 125 is formed by the silicon with high-resistance high doped, in an example, described high resistance is enough to add thermal head tip 120 to about 100-500 ℃ during by well heater 125 when electric current.The resistance of well heater 125 is functions of temperature.
Also shown storage medium (or recording medium) 130 among Figure 1A, it comprises base material 130A and supporting layer 130C.In an example, supporting layer 130C is the polyaryletherketone resin bed.In an example, supporting layer 130C has the thickness of about 10-500 nanometer.On supporting layer 130C, shown the crosslinking chemical layer 130B that solidifies.
Operation about tip assembly 100, in Figure 1A, form impression 135 in the crosslinking chemical layer 130B that solidifies, this is to write temperature T W by electric current is heated to pressure head tip 120 by cantilever 105, and pressure head tip 120 is pressed into realizes among the crosslinking chemical layer 130B of curing.Heating to pressure head tip 120 allows the most advanced and sophisticated crosslinking chemical layer 130B that penetrates described curing, forms impression 135, and this impression still keeps after removing the tip.In first example, most advanced and sophisticated 120 heating of the pressure head that the crosslinking chemical layer 130B of described curing heated are to form impression 135, and wherein the temperature at pressure head tip is not more than about 500 ℃.In second example, most advanced and sophisticated 120 heating of the pressure head that the crosslinking chemical layer 130B of described curing heated are to form impression 135, and wherein the temperature at pressure head tip is not more than about 400 ℃.In the 3rd example, most advanced and sophisticated 120 heating of the pressure head that the crosslinking chemical layer 130B of described curing heated are to form impression 135, and wherein the temperature at pressure head tip is about 200-500 ℃.In the 4th example, most advanced and sophisticated 120 heating of the pressure head that the crosslinking chemical layer 130B of described curing heated are to form impression 135, and wherein the temperature at pressure head tip is about 100-400 ℃.When forming impression 135, around impression, form the crosslinking chemical ring 135A that solidifies.Impression 135 expression data bit value " 1 " do not exist impression to represent data bit value " 0 ".Impression 135 is nanoscale impression (width is several to the hundreds of nanometer).
Place value is read in Figure 1B and 1C demonstration.In Figure 1B and 1C, tip assembly 100 scannings are through the part of the crosslinking chemical layer 130B of described curing.When pressure head tip 120 is in when top zone of the crosslinking chemical layer 130B of the curing that does not contain impression, the distance between the surface of the crosslinking chemical layer 130B of well heater 125 and described curing is D1 (referring to Figure 1B).When pressure head tip 120 is in when top zone of the crosslinking chemical layer 130B of the curing that contains impression, the distance between the surface of the crosslinking chemical layer of well heater 125 and described curing is D2 (referring to Fig. 1 C), and this is because tip " falling " is gone in the impression.D1 is greater than D2.If well heater 125 is in the temperature T R (reading temperature) that is lower than TW (writing temperature), the situation when then the thermal loss to base material 130A when pressure head tip 120 is in the impression is not in the impression greater than most advanced and sophisticated 120.This variation that can be used as heater resistance when steady current is measured, and " reads " data bit value thus.Advantageously use independent well heater to be used to read, this well heater mechanically is connected with the tip, but separates with hot mode with the tip.
" wipe " (not shown) and be by pressure head tip 120 being heated to temperature T E (erasure temperature) near impression 135, with the tip and applying and write similar loading force and finish, this makes the impression of before having write lax to flat state, and a little dislocation writes new impression for the impression that is wiped free of.According to the needs of wiping bit stream, repeat this circulation, and impression always is retained in when wiping the track end.TE is usually greater than TW.Wipe spacing usually in about edge radius scope.In first example, most advanced and sophisticated 120 heating of pressure head that the crosslinking chemical layer 130B of described curing heated, the temperature at pressure head tip is not more than about 500 ℃, and to wipe spacing be that 10 nanometers are to remove impression 135.In second example, most advanced and sophisticated 120 heating of pressure head that the crosslinking chemical layer 130B of described curing heated, the temperature at pressure head tip is not more than about 400 ℃, and to wipe spacing be that 10 nanometers are to remove impression 135.In the 3rd example, most advanced and sophisticated 120 heating of pressure head that the crosslinking chemical layer 130B of described curing heated, the temperature at pressure head tip be about 200-400 ℃, and to wipe spacing be that 10 nanometers are with removing impression 135.In the 4th example, most advanced and sophisticated 120 heating of pressure head that the crosslinking chemical layer 130B of described curing heated, the temperature at pressure head tip be about 200-500 ℃, and to wipe spacing be that 10 nanometers are with removing impression 135.
Fig. 2 is the axonometric drawing that waits of local probe storage array 140, and described local probe storage array comprises the data storage medium of embodiment of the present invention.In Fig. 2, local probe storage array 140 comprises the base material 145 with polymer support layer, has the crosslinking chemical layer (not shown) of curing on this supporting layer (polymeric layer 150), and the crosslinking chemical layer of curing is used as data record layer.In an example, polymeric layer 150 has the thickness of about 10-500 nanometer, and the root mean square surfaceness in the writable area territory of whole polymeric layer 150 on whole polymeric layer 150 less than about 1.0 nanometers.Being positioned on the polymeric layer 150 is probe assembly 155, and it comprises the array of probe tip assembly 100.Probe assembly 155 can move in X, Y and Z direction with respect to base material 145 and polymeric layer 150 by the equipment of any number known in the art.Switch arrays 160A and 160B are connected on each row (directions X) and row (Y direction) of probe tip assembly 100, thereby allow the addressing of each probe tip assembly.Switch arrays 160A is connected with controller 165 with 160B, controller 165 comprises: be used for each probe tip assembly 100 write control circuit of write data bits independently, be used for each probe tip assembly 100 independently read data bit read control circuit, be used for each probe tip assembly 100 independently erase data bit wipe control circuit, be used for controlling independently the thermal control circuit of each well heater of each probe tip assembly 100, and be used to control X, the Y of probe assembly 155 and X, Y and Z control circuit that Z moves.Z control circuit control contact mechanism (not shown), this mechanism is used to make the polyaryletherketone resin bed 150 of described curing to contact with the tip of probe tip assembly 100 arrays.
During write operation, near polymeric layer 150, and probe tip assembly 100 scans with respect to polymeric layer 150 with probe assembly 155.Local impression 135 forms as mentioned above.Each probe tip assembly 100 is only write in the respective regions 170 of polymeric layer 150.This has reduced the distance amount, has therefore reduced the required time of write data.
During read operation, near polymeric layer 150, and probe tip assembly 100 scans with respect to polymeric layer 150 with probe assembly 155.Local impression 135 is detected as mentioned above.Each probe tip assembly 100 is only read in the respective regions 170 of polymeric layer 150.This has reduced the distance amount, has therefore reduced the required time of read data.
During erase operation, near polymeric layer 150, and probe tip assembly 100 scans with respect to polymeric layer 150 with probe assembly 155.Local impression 135 is wiped free of as mentioned above.Each probe tip assembly 100 is only read in the respective regions 170 of cured polymer layer 150.This has reduced the distance amount, has therefore reduced the required time of obliterated data.
Other details relevant with above-mentioned data storage device can find in following article: " TheMillipede-More than one thousand tips for future AFM data storage; " P.Vettiger etc., IBM Journal of Research and Development, the 44th volume, No.3, in May, 2000 and " The Millipede-Nanotechnology Entering Data Storage; " P.Vettiger etc., IEEE Transaction on Nanotechnology, the 1st volume, No, in March, 1,2002.Also open on March 3rd, 2005/0047307,2005 referring to the U.S. Patent Publication of Frommer etc., and the U.S. Patent Publication of Frommer etc. is open on March 3rd, 2005/0050258,2005, is herein incorporated by reference both full contents.
Fig. 3 has shown the vaporising device that is used for the crosslinking chemical evaporation.This device comprises two thermal conduction plates 220,230 that can be heated to 420 ℃ respectively.With the plate placement that is parallel to each other, and separate for example 4 centimetres distance.The source 200 of evaporation process is fixed on the base plate 220.For this reason, with crosslinking chemical, for example crosslinking chemical 1,3, and the film of 5-three (4-(phenylacetylene base) phenyl) benzene (structure I I) is spin-coated on the silicon wafer from solution.Towards the source 200, make aimed wafer 210 be connected to top board 230.Shutter 240 is placed between two plates, and it can begin or stop the deposition of source material on target effectively.And device placed the high vacuum chamber (not shown).
By target being placed the temperature correction of carrying out evaporation process under the room temperature.Before opening shutter 240, make source temperature be increased to 120 ℃ of hydrone or other pollutants to evaporate any absorption.Find crosslinking chemical, particularly 1,3, effective evaporation of 5-three (4-(phenylacetylene base) phenyl) benzene (structure I I) can obtain under 150-200 ℃ temperature.The average thickness that is deposited on the film on the aimed wafer in evaporation after 10 minutes is measured as 23 nanometers by ellipsometry.
In second experiment, in whole evaporation process, target is remained under 400 ℃.Purpose is to cause cross-linking reaction when crosslinking chemical once arriving target.Because this high temperature, a part of molecule of crosslinking chemical evaporates from target again, thus with first experiment in obtain under the identical evaporation conditions than before the thinner film of embodiment.After evaporation 10 minutes, the thickness of measuring by ellipsometry is 1.5 nanometers.Behind 30-70 minute evaporation time, obtain the layer of 5-10 nano thickness.
In the 3rd experiment, the thickness of the high temperature polymer of low cross-linking is that the spin-coating film of 134 nanometers (measuring by ellipsometry) (for example can use by 4 as target, 4 '-difluoro benzophenone, resorcinol and 3, the poly aryl ether ketone polymer that two (4-(the phenylacetylene base)-phenyl) phenol of 5-obtain, this polymkeric substance is described among the US 2007/0296101A1).After the crosslinking chemical evaporation, it is 134 nanometers once more that the gross thickness of target is measured by ellipsometry.Yet, labor has disclosed hierarchy, wherein top layer has the thickness of 9 nanometers (measuring by ellipsometry), it comprises 1,3, the potpourri of the curing of 5-three (4-(phenylacetylene base) phenyl) benzene (structure I I) and substrate polymer (in this experiment, target being remained under 400 ℃).Can have the potpourri that solidifies by ellipsometry proof: the measured value of refractive index is between the value of the low cross-linking polymkeric substance of the crosslinking chemical of pure curing and pure curing.Therefore, this experiment show that crosslinking chemical freely spreads and with the polymkeric substance local reaction, increase cross-linking density thus.The hardness of gained medium is relevant with cross-linking density.
Fig. 4 has shown an example of the data storage medium that obtains by previous experiments.This data storage medium comprises that the base material (145) that made by silicon or another material and uncrosslinked or crosslinked slightly sublevel (151) are as poly aryl ether ketone polymer layer (part of the cross-linking monomer in main chain＜10% usually).Data storage medium further comprises top layer (152), and it is highly cross-linked and comprise the crosslinking chemical (for example 1,3,5-three (4-(phenylacetylene base) phenyl) benzene) of curing.Top layer thickness is generally the 5-10 nanometer.
Fig. 5 and 6 shows n array position (Fig. 5) that has write on the low cross-linking polymer surfaces and the hierarchy that is obtained by the low cross-linking polymkeric substance respectively, and wherein crosslinking chemical is deposited upon its top and goes up (Fig. 6).
Be the described poly aryl ether ketone polymer of paragraph as described above at the low cross-linking polymkeric substance shown in Fig. 5.Also describe at the hierarchy that is used for the grid position of writing shown in Fig. 5 in aforementioned paragraphs.
In order to write the grid position, use the thousand-legger device.Each of four sections is all write under different temperature in two width of cloth figure, is respectively 100 ℃, 230 ℃, 367 ℃ and 500 ℃ from bottom to up.In each section, increase power after triplex row.Be respectively 85nN, 105nN, 125nN and 145nN.
Fig. 7 has shown the TEMPERATURE FORCE relation for the position that has 1 nanometer (" 1 "), 2 nanometers (" 2 "), 3 nanometers (" 3 ") and 4 nanometers (" 4 ") given depth respectively, and institute's rheme has write on low cross-linking polymkeric substance (continuous lines) and the surface by the hierarchy (dotted line) that obtains at the low cross-linking polymkeric substance that has the crosslinking chemical layer of deposition on its top.Polymkeric substance/the hierarchy that is used for this experiment is identical with polymkeric substance/hierarchy of describing in aforementioned paragraphs.
For the sample of the crosslinking chemical top layer with curing, curve shows clearly that towards the displacement of higher force hardness increases as expectation.In fact, the increase part of crosslinked side has reduced the movability of polymer chain.Therefore, glass transition temperature increases, and the local relatively hard materials that forms.By this method, expectation obtains to show the medium that has hardness gradient from the top, because carry out the supply of crosslinking chemical in diffusion process.By changing evaporation time and final target temperature, the medium that can obtain to have different diffusion lengths of changing.In this way, can coordinate the performance of medium with optimization write condition, position reservation and points wear.
Synthesizing of polymkeric substance and crosslinking chemical:
Crosslinking chemical can be according at US 6,713, exemplary the synthesizing of describing among the 590B2.And, 1,3,5-three [4-(phenylacetylene base) phenyl] benzene can be according to S.V.Lindeman etc., RussianChemical Bulletin C/C of Izvestiia-Akademiia Nauk Seriia Khimicheskaia1994,43,1873 or according to Connor etc., Adv.Mater.2004,16,1525 synthesize.
Synthesize described in poly aryl ether ketone polymer such as the US 2007/0296101A1.Synthesize described in polyimide oligomers such as the WO 2007/096359A2.
Claims (19)
1. one kind prepares the method that is used for the data storage medium of terrain feature form storage data on substrate surface, and it may further comprise the steps:
(a) deposit crosslinking chemical on substrate surface, described crosslinking chemical comprises at least three alkynyls,
(b) solidify the crosslinking chemical that deposits, prepare the modified surface of base material thus, thereby on substrate surface, obtain the data storage medium of crosslinked polymer layer form.
2. according to the described method for preparing data storage medium of aforementioned claim,
Wherein step (a) is deposited on the substrate surface by the evaporation of crosslinking chemical with the crosslinking chemical steam and carries out.
3. according to each described method for preparing data storage medium of aforementioned claim,
Wherein said crosslinking chemical has ZR
3And/or Z ' R
4Structure,
Wherein,
Z and Z ' have relevant aromatics and/or aliphatic syndeton part and
R represents to comprise the structure division and the replacement of alkynyl or do not replace aromatic structure part and/or the hydrogen atom on the terminal carbon of alkynes mutually at random independently.
4. according to each described method for preparing data storage medium of aforementioned claim,
Wherein said syndeton part Z or Z ' expression
Or silicon atom;
Wherein * be illustrated between R and Z or the Z ' key and
Wherein L represents O, CH
2, C (CH
3)
2, arlydene structure division or the singly-bound between two aromatic rings.
5. according to each described method for preparing data storage medium of preceding two claims,
Wherein R mutually at random independently expression comprise substituted alkynyl structure division ,-or right-substituted phenylene structure division and/or phenyl.
6. according to each described method for preparing data storage medium of aforementioned claim,
Wherein R expression independently at random mutually
Wherein * is illustrated in the key between R and Z or the Z '.
7. according to each described method for preparing data storage medium of aforementioned claim,
Wherein said crosslinking chemical can less than 300 ℃, preferably less than 250 ℃ temperature under, most preferably under 150-200 ℃ temperature, evaporate.
8. according to each described method for preparing data storage medium of aforementioned claim,
Wherein said crosslinking chemical has and is lower than about 900 dalton, the preferred daltonian molecular weight of 270-800.
9. according to each described method for preparing data storage medium of aforementioned claim,
Wherein said base material is a template, and carries out following steps afterwards in step (b):
(c) modified surface that makes in step (b) contact with the destination layer surface, acquisition comprises the assembly of base material with crosslinked polymer layer and the destination layer adjacent with modified surface thus; With
(d) destination layer that has data storage medium by the environment that inserts the liquid in step (c) assembly that obtains on it is transferred at least one adjacent area on the target surface,
Wherein step (c) and destination layer (d) are the supporting layer that is used for crosslinked polymer layer, and data storage medium obtains on the surface of supporting layer.
10. according to each described method for preparing data storage medium of aforementioned claim,
Wherein the surface of template is a water-wetted surface, and the liquid of introducing in step (d) comprises polar liquid.
11. according to each described method for preparing data storage medium of preceding two claims,
Wherein the surface of template comprises one of following surface: mica base material, flame annealing glass baseplate, the silicon oxide layer on silicon substrate and (100) surperficial perovskite base material salt deposit.
12. according to each described method for preparing data storage medium of first three claim,
Wherein in step (a), the potpourri of crosslinking chemical and comonomer is deposited on the substrate surface, described comonomer comprises at least two alkynyls, with in step (b), the crosslinking chemical of deposition and the potpourri of the comonomer of deposition are cured, make crosslinked polymer layer thus and obtain modified surface.
13. according to each described method for preparing data storage medium of claim 1-8,
Wherein said base material is to comprise the supporting layer that one or more contain the crosslinkable polymer of alkynyl, wherein in step (b), crosslinking chemical and crosslinkable polymer to deposition are cured, and make crosslinked polymer layer thus to obtain data storage medium on the surface of supporting layer.
14. each described method for preparing data storage medium of claim as described above,
Wherein said supporting layer comprises one or more poly aryl ether ketone polymers and/or polyimide oligomers, described one or more aryl ether ketone polymkeric substance and/or polyimide oligomers have at least two ends separately, and each end has two or more phenylacetylene based structures parts.
15. each described method for preparing data storage medium of claim as described above,
Wherein step (b) is at 330-450 ℃, preferred 350-450 ℃ and most preferably carry out under 400-450 ℃ the temperature.
16. each described method for preparing data storage medium of claim as described above,
The thickness of wherein said data storage medium is at least 5 nanometers.
17. each described method for preparing data storage medium of claim as described above,
Wherein step (a) is undertaken by plasma deposition.
18. data storage medium that is used for storing data that obtains according to each described method of aforementioned claim with the terrain feature form.
19. a data storage device, it comprises:
Be used to write and/or read to be stored in the probe of the data of data storage medium with the data storage medium of terrain feature form storage data and at least one according to aforementioned claim each described being used for.
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| CN1200961A (en) * | 1996-08-26 | 1998-12-09 | 松下电器产业株式会社 | Chemical adsorption film and preparation method therefor, and chemical adsorption liquid for preparing same |
| US20050050258A1 (en) * | 2003-08-29 | 2005-03-03 | International Business Machines Corporation | High density data storage medium |
| US20080220612A1 (en) * | 2007-03-06 | 2008-09-11 | Ute Drechsler | Protection of polymer surfaces during micro-fabrication |
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| DE4416330A1 (en) | 1994-05-09 | 1995-11-16 | Hoechst Ag | Composite membrane and process for its manufacture |
| US6045864A (en) | 1997-12-01 | 2000-04-04 | 3M Innovative Properties Company | Vapor coating method |
| US6391379B1 (en) | 1998-09-04 | 2002-05-21 | Kemet Electronics Corporation | Process of preparing a solid electrolytic capacitor containing a conductive polymer counter electrode |
| US6228434B1 (en) | 1998-12-16 | 2001-05-08 | Battelle Memorial Institute | Method of making a conformal coating of a microtextured surface |
| US6217947B1 (en) | 1998-12-16 | 2001-04-17 | Battelle Memorial Institute | Plasma enhanced polymer deposition onto fixtures |
| JP4775527B2 (en) * | 2000-07-24 | 2011-09-21 | Ｊｓｒ株式会社 | Film forming composition and insulating film forming material |
| AU2001286157A1 (en) * | 2000-11-16 | 2002-05-27 | International Business Machines Corporation | Method and apparatus for reading an array of thermal resistance sensors |
| CN100530980C (en) | 2003-07-09 | 2009-08-19 | 汤姆森特许公司 | Error correction method for reed-solomon product code |
| US7147891B2 (en) | 2004-02-11 | 2006-12-12 | Dionex Corporation | Polymer substrate coated with weak cationic-exchange functional layer |
| TW200809798A (en) * | 2006-03-31 | 2008-02-16 | Ibm | Method of producing a data storage medium |
| US20080159114A1 (en) * | 2007-01-02 | 2008-07-03 | Dipietro Richard Anthony | High density data storage medium, method and device |
| US7558186B2 (en) * | 2007-01-02 | 2009-07-07 | International Business Machines Corporation | High density data storage medium, method and device |
| US8012541B2 (en) * | 2007-01-24 | 2011-09-06 | International Business Machines Corporation | Thermally reversible cross-linked poly (aryl ether ketone) media and method for high density data storage |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1200961A (en) * | 1996-08-26 | 1998-12-09 | 松下电器产业株式会社 | Chemical adsorption film and preparation method therefor, and chemical adsorption liquid for preparing same |
| US20050050258A1 (en) * | 2003-08-29 | 2005-03-03 | International Business Machines Corporation | High density data storage medium |
| US20080220612A1 (en) * | 2007-03-06 | 2008-09-11 | Ute Drechsler | Protection of polymer surfaces during micro-fabrication |
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| KR20110071069A (en) | 2011-06-28 |
| US20160039965A1 (en) | 2016-02-11 |
| US8715804B2 (en) | 2014-05-06 |
| JP2012506598A (en) | 2012-03-15 |
| JP4988965B2 (en) | 2012-08-01 |
| US9196289B2 (en) | 2015-11-24 |
| US9676890B2 (en) | 2017-06-13 |
| EP2351027B1 (en) | 2014-12-10 |
| US20110199887A1 (en) | 2011-08-18 |
| US20140301178A1 (en) | 2014-10-09 |
| EP2351027A1 (en) | 2011-08-03 |
| CN102197429B (en) | 2014-05-07 |
| WO2010046814A1 (en) | 2010-04-29 |
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