CN102193228B - Electronic installation and electronic system - Google Patents
Electronic installation and electronic system Download PDFInfo
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- CN102193228B CN102193228B CN201110063231.3A CN201110063231A CN102193228B CN 102193228 B CN102193228 B CN 102193228B CN 201110063231 A CN201110063231 A CN 201110063231A CN 102193228 B CN102193228 B CN 102193228B
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Abstract
Title of the present invention is electronic installation and electronic system.Purpose is to provide a kind of display device, and the rest image pattern wherein moving image model and the less power of consumption can automatically or be switched by user's operation on one display on one screen.This display device includes: display floater, and it includes for detection by the photoelectric sensor of the touch input of user；For showing the display control circuit of keyboard in the part of this display screen；And storage medium, its storage is for controlling to be supplied to the program (application program) of the electric power of the inactive image region of the keyboard of display.For controlling to be supplied to this program of the electric power of this inactive image region to realize economize on electricity.
Description
Technical field
The present invention relates to the electronic installation with the circuit including transistor, and also relate to electronic system.The present invention relates to
And such as by display panels as typical electro-optical device as parts electronic installation mounted thereto.
Background technology
In recent years, the display devices such as such as E-book reader are developed the most energetically.Especially, develop the most energetically
Wherein image uses and has the technology that the display element of storage properties shows, because this technology is remarkably contributing to reduce power consumption (specially
Profit file 1).
Additionally, it is provided that there is the display device of touch sensor noticeable.It is provided with this display device of touch sensor
It is called touch panel, touch screen or its (hereinafter this display device is also simply referred as touch panel) being similar to.Additionally, peace
Dress is provided with the display device of optical touch sensitive device disclosed in patent document 2.
The number of patent application 2006-267982 of [patent document 1] Japanese Laid-Open
The number of patent application 2001-292276 of [patent document 2] Japanese Laid-Open
Summary of the invention
It is an object of the invention to provide new electronic device, its configuration makes user can show by directly or indirectly touching
The screen of showing device or by projecting and input data and can use with being maintained on screen the finger not touching it
These input data.
It is a further object to provide display device, wherein move image model and consume the static of less power
Image model can automatically or be switched by the operation of user on one display.
It is a further object to provide electronic system, it can easily be operated by user by hands and can be disappeared
Consumption low-power.
User is by visually identifying on screen the keyboard of display and with finger or similar touch the key on screen
The corresponding input position of dish inputs data.Notice that performing rest image shows to show (being not limited to keyboard) icon or at it
The region of middle display operated key.
The disclosedest one embodiment of the present of invention is display device.This display device includes storage medium
And display floater, the photoelectric sensor of the touch input wherein performed by user for detection is included in pixel portion.Should
Display floater shows screen display keyboard in the part of this display floater.The storage of this storage medium is supplied to for control and wherein shows
Show the program (application program) of the electric power of the inactive image region of keyboard.
Display device includes storage medium, and storage wherein is for touch-input function with for switching the control journey of display
Sequence, it is supplied to each of mobile image display area on one screen, rest image viewing area etc. for control
Electric power.
The supply of the signal of telecommunication to a viewing area is lowered to show rest image, and mobile image is at another
Viewing area shows.For controlling to be supplied to the program of the electric power of inactive image region to realize economize on electricity.In order to perform this function,
Display control circuit is in non-operating state during rest image display time interval；Thus, it is unclear that display (or contrast fall
Low) problem occur.Transistor including oxide semiconductor layer controls electricity at pixel portion, display control circuit or sensor
Road uses, thus can maintain display quality (even if provide the inoperative of display control circuit after rest image writes
Section).
Such as, the rewrite frequencies of display is remained to minimum by program and makes rest image show such as touch input wherein
Show on the region of the screen of the operation button such as button (or keyboard) and mobile image shows in another region of screen.
Additionally, in the case of user is not up to certain period by touch screen curtain input data wherein, stops keyboard and show
Show and rest image shows across the screen.When showing rest image, the rewrite frequencies of screen can be kept by program
To minimum；It is thus possible to economize on electricity.
Additionally, when performing predetermined touch input while the display screen display of display floater at the first picture, bag
The second picture including input data can show on a display screen.
Additionally, disclosed one embodiment of the present of invention is display device in this specification, its configuration makes the user can
To input data by (being not limited to touch display screen) with being maintained on display screen the finger projection not touching it.This shows
Showing device includes: is provided with and includes the pixel portion of photoelectric sensor and do not touched with being maintained on screen by detection
Finger projection shade on a display screen and to the display floater of its input data；For according to by the detection of photoelectric sensor
The part of display screen shows the display control circuit of keyboard；Wherein it is supplied to for control and wherein shows the static of keyboard
The storage medium of the program of the electric power of image-region.
Display floater is not particularly limited, as long as it is included in the photoelectric sensor in pixel portion.Can make
With transmissive liquid crystal display apparatus or reflection LCD device.
Can provide novel electronic installation, its configuration makes user can pass through direct or indirect touch display unit
Screen or by inputting data and use these input data can with being maintained on screen the finger projection not touching it
To save electric power.
The rest image pattern that can realize wherein moving image model and the less power of consumption can be at a display screen
The upper display device automatically or switched by the operation of user.
Transistor including oxide semiconductor layer makes in pixel portion, display control circuit or sensor control circuit
With, thus can maintain display quality (even if the inoperative period of display control circuit is provided after rest image writes).Aobvious
Show that the inoperative period of control circuit is the longest, more electric power can be saved.
Accompanying drawing explanation
Fig. 1 is the example of the block diagram of diagram one embodiment of the present of invention.
Fig. 2 illustrates the example of the display screen of one embodiment of the present of invention.
Fig. 3 illustrates the example of the display screen of one embodiment of the present of invention.
Fig. 4 illustrates the example of the display screen of one embodiment of the present of invention.
Fig. 5 is the example of the viewgraph of cross-section of the pixel of diagram one embodiment of the present of invention.
Fig. 6 is to illustrate the position relationship between reflection electrode layer in one embodiment of the invention and black matrix"
The example of plan view.
Fig. 7 A to 7C is the example of the viewgraph of cross-section of the pixel of diagram one embodiment of the present of invention.
Fig. 8 is the schematic diagram of the LCD MODULE of one embodiment of the present of invention.
Fig. 9 A and 9B is the figure of the profile of the electronic installation respectively illustrating one embodiment of the present of invention.
Figure 10 A and 10B is the figure of the profile of the electronic installation respectively illustrating one embodiment of the present of invention.
Detailed description of the invention
Hereinafter, embodiments of the invention will be described in detail with reference to the accompanying drawings.But, the invention is not restricted to saying hereafter
Bright, and those skilled in that art's pattern disclosed herein easy to understand and details can adopt and revise in various manners.Therefore,
The present invention is not interpreted as being limited to the explanation of embodiment.
(embodiment 1)
In this embodiment, description being regarded the process of the input operation of the reflection display device of example as, wherein user is led to
Cross and directly or indirectly touch screen or by making keyboard & display exist with being maintained on screen the finger projection not touching it
Making keyboard & display on the screen of display floater on screen, and this user is wherein shown by direct or indirect touch in addition
Keyboard expectation key region or by be maintained on this region of screen do not touch it finger projection input number
According to.
Noting in the case of including the transmission display device of backlight, data are transfused to by detection light.When
Screen or the holding finger of user's direct or indirect touch display panel form this light when not touching on screen,
That is, this light is formed by reflecting from the backlight of finger.
First, the power knob or its homologue that press the electronic installation including display floater make this electronic installation be opened
Open.This electronic installation at least includes for driving the drive circuit of display floater, for driving offer at the picture of display floater
The storage medium that the testing circuit of the photoelectric sensor in element part and program or multiple data block are stored therein.
The stage that electronic installation is unlocked wherein, menu screen, received by picture signal and show TV picture, carry
Before the file data that is stored in storage medium or its analog show on the screen of display floater.
Show that the menu screen as rest image or the file data being stored in storage medium are shown as quiet wherein
Only in the case of image, start and be used for identifying that menu screen or data are rest image and automatically display pattern are switched to
The program of energy-saving mode, and drive display floater to make the rewrite frequencies of display can remain to minimum.It addition, move wherein
In the case of motion video and rest image are shown on a screen simultaneously, screen is divided into mobile image display area and static
Image display area, starts the pattern for the only rest image viewing area of automatically switching and becomes the program of energy-saving mode, and drive
Dynamic display floater makes the rewrite frequencies of display in rest image viewing area can remain to minimum.
When screen opening, for driving the testing circuit of photoelectric sensor to check whether that execution is pre-with Fixed Time Interval
Determine touch input.
When user touches screen, indirectly touch screen or with being maintained on screen the finger not touching it at screen with finger
On curtain projection in case input data time, for drive photoelectric sensor testing circuit detection finger on screen or on position
Put.
Run the controlled structure block diagram (schematic construction of its diagram display device) below by reference to Fig. 1 wherein
Describe.
By the application program 103 being stored in storage medium and keyboard is worked as by the data of touch input display floater 101
Display is sent to when starting show that the data of control circuit 102 compare.Then, keyboard is based on the data when keyboard & display starts
Show in the part of screen.Fig. 2 is shown in the example of the display screen of this stage display floater.
In fig. 2, the operation button groups 11 including keyboard button 12 and screen scroll button 13 shows the part at screen
On.
Notice that operating button groups 11 is shown as rest image；Thus, start and be used for identifying rest image and automatically by mould
Formula switches to the program of energy-saving mode.Therefore, the rewrite frequencies of display can remain to minimum.
Such as, for showing that the program of operation button groups 11 has a value of viewing area of operation button groups 11, and from
And by using this value to bring display control circuit into the inoperative period.Reflect in the region of push-button result wherein,
Display control circuit is run display is rewritten periodically.Display control circuit is provided in the region of display operation button
The inoperative period, thus this region is in energy-saving mode.
Additionally, before certain period is in the past, as the second touch input operation, user is with finger touch keyboard button
12, indirect touch keyboard button 12 or do not touch it by being maintained at by finger on screen and project on screen, thus shows
Show the keyboard & display that can be switched to illustrate in figure 3.
In figure 3, in addition to screen scroll button, include that keyboard button and the numeric keypad switching of alphabet letters etc. are pressed
The operation button groups 21 of button 22 shows on a portion of a screen.Much less, the keyboard buttons such as alphabet letters are touched as user
Time, the alphabet letters etc. as input data may be displayed on another part of screen.
Notice that operating button groups 21 is shown as rest image；Thus, start and be used for identifying rest image and automatically by mould
Formula switches to the program of energy-saving mode.Therefore, the rewrite frequencies of display can remain to minimum.
Additionally, before certain period is in the past, as the 3rd touch input operation, user touches numeric keypad with finger
Switching push button 22, indirectly touch numeric keypad switching push button 22 or by finger is maintained on screen do not touch it and
Projecting on screen, thus keyboard & display can be switched to the display illustrated in the diagram.
In the diagram, in addition to screen scroll button, include keyboard button and the alphabet letters switching push button of numeral, symbol etc.
The operation button groups 31 of 32 shows on a portion of a screen.Much less, the keyboard button of numeral, symbol etc. is touched as user
Time, the numbers and symbols as input data may be displayed on another part of screen.
Notice that operating button groups 31 is shown as rest image；Thus, start and be used for identifying rest image and automatically by mould
Formula switches to the program of energy-saving mode.Therefore, the rewrite frequencies of display can remain to minimum.
Additionally, in the case of user is not up to certain period by touch screen curtain input data wherein, stops keyboard and show
Show and rest image shows across the screen.When showing rest image, the rewrite frequencies of screen can be kept by program
To minimum；It is thus possible to economize on electricity.
Described above, it is possible to achieve the rest image pattern wherein moving image model and the less power of consumption is permissible
Automatically the display device or switched by the operation of user on one display.
Additionally, when user performs touch input, this user can slide and display of sliding by finger crosses screen
Self.It addition, it is also possible for being not limited to the multi-touch input of a finger with two or more fingers.Such as, user is worked as
When making two fingers adjacent to each other on screen, the instruction of the picture reducing display can give electronic installation.It addition, work as user
Make two fingers on screen away from each other time, the instruction of picture amplifying display can give electronic installation.
(embodiment 2)
As liquid crystal panel, it is possible to use transmissive liquid crystal panel during wherein photoelectric sensor is included in pixel portion, its
Reflective liquid crystal panel that middle photoelectric sensor is included in pixel portion or its analog.
The example of the dot structure of the reflective liquid crystal panel during wherein photoelectric sensor is included in pixel portion will below
Describe.
Fig. 5 illustrates the cross section of the wherein active array substrate that photoelectric sensor and transistor are formed on same substrate
Structure.
Fig. 6 is top view.The viewgraph of cross-section and the edge chain line C-D in figure 6 that obtain along chain line A-B in figure 6 obtain
The viewgraph of cross-section taken corresponds to Fig. 5.
First, conducting film is formed on substrate 230.Then, gate line 213 and 227, capacitor wiring 224, light
Electric diode reseting signal line 208, reading holding wire and photoelectric sensor reference signal line are by using the first exposed mask
First lithography step is formed.In this embodiment, glass substrate is used as substrate 230.
The dielectric film serving as basement membrane may be provided between substrate 230 and conducting film.This basement membrane have prevent impurity unit
Element is from the function of substrate 230 diffusion.This basement membrane can form have single layer structure or stack layer structure, and it includes silicon nitride
One or more in film, silicon oxide film, silicon oxynitride film and oxygen silicon nitride membrane.
Conducting film can form have single layer structure or stack layer structure, it include such as molybdenum, titanium, tantalum, tungsten, aluminum, copper,
The metal material such as neodymium or scandium or comprise the alloy material as its main component of any material in these metal materials.
Then, form the insulating barrier for covering these wirings, and selective etch is by using the second exposed mask
The second lithography step perform to make insulating barrier 231 only residue in the part intersected with the wiring formed after a while.In this enforcement
In example, the oxygen silicon nitride membrane with 600nm thickness is used as insulating barrier 231.
Then, gate insulator 232 and oxide semiconductor film, and the first oxide semiconductor layer 233, second are formed
Oxide semiconductor layer, trioxide semiconductor layer and tetroxide semiconductor layer are by using the of the 3rd exposed mask
Three lithography steps are formed.This first oxide semiconductor layer the 233, second oxide semiconductor layer, trioxide semiconductor layer
With tetroxide semiconductor layer and gate line 227 and to read holding wire overlapping, wherein gate insulator 232 is between its it
Between.In this embodiment, the oxygen silicon nitride membrane with 100nm thickness is used as gate insulator 232, and has 30nm thickness
In-Ga-Zn-O film is used as oxide semiconductor film.
By InMO3(ZnO)mThe sull that the chemical formula of (m > 0) represents may be used for the first oxide semiconductor layer
233, the second oxide semiconductor layer, trioxide semiconductor layer and tetroxide semiconductor layer.Here, M represent from Ga,
One or more metallic elements that Al, Mn and Co select.Such as, M can be Ga, Ga and Al, Ga and Mn, Ga and Co or it is similar
Thing.Additionally, SiO2Can be included in sull above.
As the target by sputtering method formation sull, such as, there is In2O3:Ga2O3: ZnO=1:1:1 [mole
Than] the oxide target of ratio of components be used for forming In-Ga-Zn-O film.It is not limited to this material and this composition of target, such as, can make
With having In2O3:Ga2O3: the oxide target of the ratio of components of ZnO=1:1:2 [mol ratio].Note in this specification, such as,
In-Ga-Zn-O film meaning comprises indium (In), gallium (Ga) and the oxidation film of zinc (Zn), and does not has spy for stoichiometric proportion
Do not limit.
Notice that oxide semiconductor layer stands the first heat treatment.Oxide semiconductor layer can be dehydrated by the first heat treatment
Or dehydrogenation.The temperature of the first heat treatment is greater than or equal to 400 DEG C and less than or equal to 750 DEG C, or is greater than or equal to 400 DEG C also
And less than the strain point of substrate.In this embodiment, heat treatment uses rapid thermal annealing (RTA) equipment at 650 DEG C in blanket of nitrogen
Carry out 6 minutes；Substrate is introduced into and is not exposed to air in the electric furnace of a kind of Equipment for Heating Processing；Oxide semiconductor layer is at nitrogen
Atmosphere stands one hour heat treatment at 450 DEG C；And prevent water or hydrogen from entering oxide semiconductor layer；It is thus possible to acquisition oxygen
Compound semiconductor layer.
Then, gate insulator 232 is by using the 4th lithography step of the 4th exposed mask optionally to remove, thus
Formed and reach the opening of gate line 213 and reach the opening of photodiode reseting signal line 208.
Then, conducting film is formed on gate insulator 232 and oxide semiconductor layer.This conducting film can be with comprising
From the element of Al, Cr, Cu, Ta, Ti, Mo and W selection as the metal film of its composition, any element comprised these elements
Nitride formed as the alloy film etc. of the alloy film of its composition, the combination of any element comprised in these elements.?
In this embodiment, conducting film has three-decker, and stacking has the Ti film of 100nm thickness, has the Al of 400nm thickness wherein
Film and the Ti film with 100nm thickness.Then, Etching mask is by using the 5th lithography step of the 5th exposed mask leading
Formed on electrolemma and perform selective etch, being consequently formed video data signal line 210, photoelectric sensor output signals line
With electrode layer 234,235 and 236.
Note as illustrated in Figure 5, manufacture and include the first oxide semiconductor layer 233 and serve as source electrode layer or electric leakage
The transistor of the electrode layer 234 of pole layer.Additionally, as illustrated in Figure 5, electrode layer 234, serve as dielectric gate insulator
232 and capacitor wiring 224 formation storage capacitors 222.
Then, in inert gas atmosphere or oxygen atmosphere, the second heat treatment is performed (preferably greater than or equal to 200 DEG C
And less than or equal to 400 DEG C, such as greater than or equal to 250 DEG C and less than or equal to 350 DEG C).In this embodiment, second
Heat treatment performs one hour at 300 DEG C in blanket of nitrogen.By the second heat treatment, the part (channel shape of oxide semiconductor layer
Become district) heated when contacting with insulating barrier.
Then, form the insulating barrier 237 serving as protectiveness insulating barrier, and perform to use the 6th light of the 6th exposed mask
Carve step, be consequently formed and reach the opening of electrode layer 235, reach the opening of electrode layer 234 and reach the opening of electrode layer 236.
In this embodiment, as insulating barrier 237, the silicon oxide film with 300nm thickness formed by sputtering method is used.
Then, p layer 238, i layer 239 and n-layer 240 are stacked by plasma CVD method.In this embodiment, boron is comprised
60nm thickness microcrystalline sillicon film is used as p layer 238, and 400nm crystal silicon film of being altogether unjustifiable is used as i layer 239, and comprises the 80nm thickness microcrystalline sillicon film of phosphorus
As n-layer 240.Then, p layer 238, i layer 239 and n-layer 240 are by using the 7th lithography step selectivity of the 7th exposed mask
Ground etching, and the part of n-layer 240 and the part of i layer 239 are selectively removed thereafter.
Then, forming photosensitive organic resin layer, perform the 8th lithography step, the region of opening to be become thus uses the 8th
Exposed mask exposes, and to become uneven region use the 9th exposed mask exposure and develop, and is consequently formed part
Uneven insulating barrier 241.In this embodiment, there is the acrylic resin of thickness of 1.5 μm for photosensitive organic resin layer.
Then, deposition of reflective conducting film and perform to use the 9th lithography step of the tenth exposed mask, it is consequently formed anti-
Penetrate electrode layer 242 and connect electrode layer 243.For this reflective conductive film, use Al, Ag or its alloy, such as, comprise Nd's
Aluminum or Ag-Pd-Cu alloy etc..In this embodiment, this reflective conductive film is 100nm thickness Ti film and on this Ti film
The stack layer of 300nm thickness Al film.After the 9th lithography step, perform the 3rd heat treatment.In this embodiment, at the 3rd heat
Reason performs one hour at 250 DEG C in blanket of nitrogen.
By step above, it is electrically connected to the transistor of reflection electrode layer 242 and electrically connects by connecting electrode layer 243
Photodiode 204 to gate line 213 can be by amounting to nine lithography steps using ten exposed masks one
Individual substrate is formed.
This embodiment freely can combine with embodiment 1.
(embodiment 2)
In this embodiment, by describe wherein provide color filter and its can the showing of LCD MODULE of total colouring
Example.
Fig. 8 illustrates the structure of LCD MODULE 190.This LCD MODULE 190 includes display floater 120 (wherein liquid
Crystal cell uses arranged in matrix) and the polarizing plate overlapping with this display floater 120 and color filter 115.It addition, serve as outside defeated
Flexible print circuit (FPC) 116a and 116b entering end is electrically connected to provide the end in display floater 120.Display floater
120 have the structure identical with the display floater 101 described in embodiment 1.Note because LCD MODULE 190 performs entirely
Color shows, display floater 120 uses three display elements of red display element, green display elements and blue display element,
And having wherein different video signal is supplied to the circuit of these three display elements to configure.
And reflecting additionally, Fig. 8 schematically illustrates wherein exterior light 139 through the liquid crystal cell in display floater 120
The state that electrode is reflected.Such as, in the pixel overlapping with the red area of color filter, exterior light 139 is through color filter 115
And then by liquid crystal layer, reflected at reflecting electrode, and be again passed through color filter 115 to be extracted as red light.?
In Fig. 8, three colors of light 135 are schematically indicated by arrow (R, G and B).The intensity of the light of permeate crystal cell is believed by image
Number modulation；Thus, beholder can be seen that the image of the reflection light by exterior light 139.
It addition, multiple photoelectric sensors of being included in pixel portion of display floater 120 and there is touch-input function.
When the optical receiving region of photoelectric sensor is also with color filter overlapping, photoelectric sensor can play the effect of visible light sensor.
Additionally, in order to include a large amount of incident illumination in for improving the optical sensitivity of photoelectric sensor, opening may be provided in color filter
Make the optical receiving region of photoelectric sensor and color filter the most mutual in the region overlapping with the optical receiving region of photoelectric sensor
Overlap.
This embodiment freely can combine with embodiment 1 and 2.
(embodiment 4)
In this embodiment, an example, wherein transistor and photoelectric sensor are formed on glass substrate, then should
Transistor and photoelectric sensor are installed on flexible substrates.Noting, in this embodiment, Fig. 7 A to 7C is the cross section of transistor
Process view, omits detailed description (itself and those phases in example 2 of the structure about step and photodiode etc.
With), and the parts identical with in Figure 5 those are by identical label instruction.
First, stratum disjunctum 260 is formed on substrate 230 by sputtering method, and the oxide playing basement membrane effect is exhausted
Velum 261 is formed on this stratum disjunctum 260.Notice that glass substrate, quartz substrate or its analog are used as substrate 230.This oxygen
Compound dielectric film 261 uses such as silicon oxide, silicon oxynitride (SiO by PCVD method, sputtering method or the likexNy)(x>y>0)
Or silicon oxynitride (SiNxOy) (x > y > 0) formation.
Stack layer or its analog of metal film, metal film and metal oxide film can serve as stratum disjunctum 260.This metal
Film formed with have from tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), niobium (Nb), nickel (Ni), cobalt (Co), zirconium (Zr), zinc (Zn),
Element that ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os) and iridium (Ir) select or comprise any element conduct in these elements
The alloy material of its Main Ingredients and Appearance or the single layer structure of the film of compound-material or stack layer structure.Such as, pass through when tungsten film
Sputtering method, CVD or the like are provided as metal film, and the metal oxide film of tungsten oxide can be by performing on this tungsten film
Cement Composite Treated by Plasma is formed on the surface of this tungsten film.It addition, such as after metal film (such as, tungsten) is formed, with silicon oxide or
The dielectric film that its analog is formed can be formed by sputtering method on this metal film, and metal-oxide (such as, tungsten it
On tungsten oxide) also can be formed on metal film.Additionally, as Cement Composite Treated by Plasma, such as, available high-density plasma
Equipment performs high-density plasma and processes.In addition to metal oxide film, metal nitride films or metal oxynitride can be used
Thing film.In this case, Cement Composite Treated by Plasma or heat treatment can perform in blanket of nitrogen or nitrogen and oxygen atmosphere on metal film.
Then, conducting film is formed on oxide insulating film 261.Thereafter, use the mode similar to embodiment 2,
Gate line 227, capacitor wiring 224, photodiode reseting signal line, reading holding wire and photoelectric sensor are with reference to letter
Number line is formed by using the first lithography step of the first exposed mask.
Step subsequently performs to form transistor and reflection electrode layer 242 according to embodiment 2.Then, reflection electrode layer
242 cover with water-soluble resin layer 262.Fig. 7 A is the viewgraph of cross-section of the state being shown in this stage.Note in fig. 7, figure
Show the cross-sectional structure near reflection electrode layer 242 and not be shown in, in order to simplify, the photoelectricity two formed on same substrate
Pole is managed.
Then, water-soluble resin layer 262 is fixed to support substrate or its analog.Thereafter, laser irradiation or similar
Perform to be formed opening in stratum disjunctum, and include that the layer of transistor separates from substrate 230.Fig. 7 B is the shape being shown in this stage
The viewgraph of cross-section of state.As illustrated in figure 7b, oxide insulating film 261 and on substrate 230 formed stratum disjunctum
Interface between 260 performs separation.
Then, as illustrated in fig. 7 c, flexible substrate 264 attach to tack coat 263 to include the layer of transistor by
The surface exposed in separation.Plastic foil can serve as this flexible substrate 264.It addition, it is soft to can serve as this at the bottom of thin stainless steel lining
Property substrate 264, because using reflection LCD device in this embodiment.
Then, water-soluble resin layer 262 is removed.Thereafter, oriented film 244 is formed.Then, it is provided that have electrode 267 is right
Substrate 268 sealant attaches to flexible substrate 264.Notice that this also is provided with oriented film 266 for attaching to substrate 268
Cover electrode 267 before flexible substrate 264.In the case of using liquid crystal dots dripping method wherein, liquid crystal drop is being sealed by closed loop
In the region of agent cincture, and attach a pair substrate under reduced pressure.Adopt in such a way, liquid crystal layer 265 fill by
This is to substrate and the region of sealant cincture.
Liquid crystal layer 265 is not particularly limited, and known liquid crystal materials (typically, nematic crystal material can be used
Material or cholesteric liquid crystal material).Especially, when polymer-dispersed liquid crystal (PDLC) or polymer network liquid crystal (PNLC) are at liquid
When using in crystal layer, light is by scattering liquid crystal.Utilize such scattered light, white displays (bright display) can be performed.As PDLC or
When PNLC uses in liquid crystal layer, it is not necessary to polarizing plate and the display close to paper can be realized.Cause it is thus possible to manufacture
Less asthenopic eyes friendly liquid crystal indicator.
When there is high light transmittance matter and causing the plastic foil of less delay to be used as substrate 268, flexibility can be manufactured
Liquid crystal panel.
Additionally, the manufacture process of above-described flexible liquid crystal panel is example.Such as, flexible liquid crystal panel can use
As the glass substrate of substrate 230 and substrate 268 can be processed into thin after transistor manufacture by polishing or the like
Mode manufactures.In this case, substrate 230 and all polished after liquid crystal layer is formed in-between to substrate 268.
Wherein it is provided with substrate electrode and electric field are put on and (is supplied to form crystal to electrode and reflection electrode layer
Substrate at pipe) between the example of liquid crystal panel of liquid crystal layer describe in this embodiment.But, can manufacture and use transverse electric field
The transmissive liquid crystal panel (also referred to as IPS) of method, wherein pixel electrode layer and common electrode layer are all supplied to be formed at transistor
Substrate, and electric field puts on liquid crystal layer on the direction of first type surface being parallel to substrate.
Alternatively, the blue phase liquid crystal not having oriented film can be used for forming transmissive liquid crystal panel.Blue phase is in liquid crystalline phase
Individual, it produced just before when the temperature of cholesteric liquid crystal increases, cholesteric phase is changing into isotropic phase.Because blue phase only exists
Occurring in narrow temperature scope, the liquid crystal comprising 5wt% or more chiral agent forms for liquid crystal layer to make temperature range become
Wide.Comprise and show the liquid crystal composition of the liquid crystal of blue phase and chiral agent and there is 1 millisecond or shorter short response time and there is light
Learning isotropism, it makes orientation process be no longer necessary to, and has little view angle dependency.
Additionally, present invention could apply to transmissive liquid crystal panel, wherein use optical compensation birefringence (OCB) pattern.?
In ocb mode, the response speed of liquid crystal layer uses this liquid crystal layer made between a pair substrate to enter curved oriented state so
Mode improve.Control the tilt angle of the first oriented film contacted with this liquid crystal layer and the second oriented film contacted with this liquid crystal layer
Tilt angle, be thus curved orientation.In ocb mode, this liquid crystal layer needs to orient from the splayed of original state
(splay alignment) enters curved oriented state.
Additionally, present invention could apply to transmissive liquid crystal panel, wherein use vertical orientation pattern.Use vertical wherein
In the transmissive liquid crystal panel of directional pattern, a pixel can be used to be divided into multiple sub-pixel for obtaining the driving method of wide viewing angle
And the part (each of which is corresponding to the center of each pixel) of substrate is provided with ledge (projectionportion)
Perform in orientation segmentation (alignment division) (multidomain) such mode of one pixel of execution.This driving method claims
Drive for sub-pixel.
Wherein there is the nematic liquid crystalline material of negative dielectric anisotropic it is used as liquid crystal material and vertical additionally, can be formed
Oriented film is used as the liquid crystal panel of oriented film.Wherein use vertical orientation film the method be Control of Voltage birefringence (also referred to as
ECB) in method, and absorbance utilizes the birefringence of liquid crystal molecule to control.
This embodiment freely can combine with any embodiment in embodiment 1 to 3.
(embodiment 5)
In this embodiment, (its each any embodiment included in embodiment 1 to 4 is retouched describing electronic installation
The liquid crystal indicator stated) example.
Can be applied by the liquid crystal indicator of the process manufacture described in any embodiment in embodiment 2 to 4
In multiple electronic installation (including game machine).The example of electronic installation be television equipment (also referred to as TV or television receiver),
The monitor of computer or the like, the such as filming apparatus such as digital filming device or digital camera, digital frame, mobile electricity
Words hand-held set (also referred to as mobile phone or portable telephone device), portable game machine, portable data assistance, audio reproduction dress
Put, the large-scale console etc. such as such as ball spring game machine.
The example of Fig. 9 A diagram television equipment.In television equipment 9601, display floater 9603 is included in shell.This display
Panel 9603 can show image.In figure 9 a, television equipment 9601 is fixed to wall 9600 and is propped up at the back of shell
Support.
In television equipment 9601, as described in embodiment 1, on display floater 9603, the image of display can lead to
Cross and use the touch input of the optical sensor provided in the pixel portion of display floater to control.It addition, keyboard can be aobvious
Show and show to input data on panel 9603.
It addition, television equipment 9601 can operate with the operation switch of shell or independent remote controllers 9610.With far
The operated key 9609 of range controller 9610 thus can be able to control at display floater with switching channels and volume can be controlled
The image of display on 9603.Additionally, remote controllers 9610 can be provided with for display from the number of remote controllers 9610 output
According to display floater 9607.
Notice that television equipment 9601 is provided with receptor, modem etc..Use this receptor, can accept general
Television broadcasting.Additionally, when display device is wired or wirelessly connected to communication network by modem, can perform unidirectional
(from transmitter to receptor) or two-way (between transmitter and receiver, between receptor or similar) information communication.
The display floater 9603 being provided with touch-input function is suitable for unidirectional or two way messaging communication.
Fig. 9 B illustrates portable game machine, and it includes shell 9881 and shell 9891, and it uses adapter 9893 to engage and makes
Obtain portable game machine to open or fold.Display floater 9882 and display floater 9883 include shell 9881 and shell respectively in
In 9891.It is tactile that display floater 9882 and each photoelectric sensor included in pixel portion of display floater 9883 make them have
Touch input function.The portable game machine illustrated in figures 9 b and 9 comprises additionally in speaker portion 9884, record medium insertion portion
9886, (operated key 9885, connection end 9887, sensor 9888 (have measurement power, displacement, position for LED 9890, input block
Put, speed, acceleration, angular velocity, revolution, distance, light, sound, inclination angle, vibration or the sensor of ultrared function), mike
9889) etc..The portable game machine illustrated in figures 9 b and 9 has reading and stores program in the recording medium or data with aobvious
Show the function showing it on panel, and shared the function of information by radio communication and another portable game machine.
The example of Figure 10 A diagram mobile phone.Mobile phone 1000 includes including the display floater 1002 of shell 1001, behaviour in
Make button 1003, external connection port 1004, speaker 1005, mike 1006 etc..
As described in embodiment 1, user can be by (including tool with finger or the like touch display panel 1002
Have the pixel portion of photoelectric sensor) input data in the mobile phone 1000 illustrated in Figure 10 A.Additionally, user can be led to
Cross and make a phone call with finger or the like touch display panel 1002 or send short messages.
When the detection device including the sensor for detecting inclination (such as gyroscope or acceleration transducer etc.) provides
When mobile phone 1000 is internal, (mobile phone 1000 is for transverse mode in the direction of detection device detection mobile phone 1000
Or vertical pattern is level or is disposed vertically) screen of display floater 1002 can be automatically switched.
Screen pattern is switched by the operation button 1003 of touch display panel 1002 or operation housing 1001.Alternatively,
Screen pattern can depend on the kind switching of the image of display on display floater 1002.Such as, when showing on a display panel
When the signal of the image shown is the signal of moving image data, screen pattern is switched to display pattern.When signal is text data
Signal time, screen pattern is switched to input pattern.
Additionally, in input pattern, when detection is by the photoelectric sensor provided in the pixel portion of display floater 1002
When not performing to be up to certain period by the input of touch display panel 1002 while the signal of detection, screen pattern can be controlled
System is to be switched to display pattern from input pattern.
Figure 10 B is the perspective view of the example of diagram E-book reader.In fig. 1 ob, E-book reader open and
Including multiple display floaters: first display floater the 4311, second display floater 4312 and at the first display floater 4311 and second
Two-sided 3rd display floater between display floater 4312.
The E-book reader illustrated in fig. 1 ob includes: the first display floater 4311, and it includes display floater 4301；
Second display floater 4312, it includes operation part 4304 and display floater 4307；3rd display floater 4313, it includes display
Panel 4302 and display floater 4310；With at the first display floater the 4311, second display floater 4312 and the 3rd display floater
The bound fraction 4308 that the end of 4313 provides.3rd display floater 4313 is between the first display floater 4311 and the second display surface
Between plate 4312.The E-book reader illustrated in fig. 1 ob includes four display screens: display floater 4301,4307,4302 and
4310。
First display floater the 4311, second display floater 4312 and the 3rd display floater 4313 are flexible and thus hold
Flexible.These panels can be by the method manufacture described in example 4.
3rd display floater 4313 is double face display panel, and it includes display floater 4302 and display floater 4310.?
In three display floaters 4313, using two display panels, backlight (preferably, thin EL luminescent panel) is between it.Three
At least one performed total colouring and other display floaters in individual display floater can perform monochromatic display.
In the E-book reader illustrated in fig. 1 ob, the second display floater 4312 includes operation part 4304, and it is permissible
There is the switch of various function, such as on and off switch and for changing the switch of display.
User can be by with finger, input pen or the like touch display panel 4301 or display floater 4307 (wherein
Photoelectric sensor provides in pixel portion) or input data into the electronics of diagram in Figure 10 B by operation operation part 4304
In book reader.Noting in fig. 1 ob, the Show Button 4309 shows on display floater 4307, and user can be by using
Finger or the like touches the Show Button input data.
The application is based on the Japanese Patent Application No 2010-submitted to Japan Office on March 8th, 2010
050941, entire contents is incorporated herein by reference.
Claims (7)
1. a display device, including:
Display floater, it includes the photoelectric sensing being configured to detect the touch input performed on a display screen in pixel portion
Device；
Display control circuit, it is configured to show the first detection of the first touch input described according to by described photoelectric sensor
Show in a part for display screen operation first group of button and according to by described photoelectric sensor to the second touch input the
Two detections show second group of operation button in a part for described display screen；
Having the transistor of channel formation region, described channel formation region includes that oxide semiconductor, wherein said transistor comprise
In one or both of described pixel portion and described display control circuit；And
Storage medium, it is configured to store the rest image first area for controlling to be supplied to described first group that operates button
With the program of the electric power of the rest image second area of operation described second group of button,
Wherein described the second of described second touch input is detected by described the first of direct or indirect touch operation button
In in group one or one in described first group of operation button, cast shadow performs,
Wherein said program be configured to be divided into described display screen mobile image-region and described rest image first area and
One of described rest image second area,
Wherein said program is configured to compare the power consumption in described mobile image-region and more reduces described rest image first area
With the power consumption in described rest image second area,
Varying in size in described rest image of described first group of operation button in wherein said rest image first area
The size of described second group of the operation button in second area, and
Wherein said display control circuit is in non-operating state after rest image writes during rest image display time interval.
2. a display device, including:
Display floater, in pixel portion, it includes that being configured to detection projects shade on a display screen in the case of not touching
Photoelectric sensor；
Display control circuit, it is configured to show the first detection of the first touch input described according to by described photoelectric sensor
Show in a part for display screen operation first group of button and according to by described photoelectric sensor to the second touch input the
Two detections show second group of operation button in a part for described display screen；
Having the transistor of channel formation region, described channel formation region includes that oxide semiconductor, wherein said transistor comprise
In one or both of described pixel portion and described display control circuit；And
Storage medium, it is configured to store the rest image first area for controlling to be supplied to described first group that operates button
With the program of the electric power of the rest image second area of operation described second group of button,
Wherein described the second of described second touch input is detected by described the first of direct or indirect touch operation button
In in group one or one in described first group of operation button, cast shadow performs,
Wherein said program be configured to be divided into described display screen mobile image-region and described rest image first area and
One of described rest image second area,
Wherein said program is configured to compare the power consumption in described mobile image-region and more reduces described rest image first area
With the power consumption in described rest image second area,
Varying in size in described rest image of described first group of operation button in wherein said rest image first area
The size of described second group of the operation button in second area, and
Wherein said display control circuit is in non-operating state after rest image writes during rest image display time interval.
3. display device as claimed in claim 1 or 2, wherein said display floater is transmissive liquid crystal display panel.
4. display device as claimed in claim 1 or 2, wherein said display floater is reflective liquid crystal display panels.
5. display device as claimed in claim 1 or 2, wherein operate button described first group and operation button described the
Two groups is keyboard or icon.
6. display device as claimed in claim 2, the wherein said shade finger being maintained on described display screen projects.
7. display device as claimed in claim 1 or 2, wherein said oxide semiconductor includes In, Ga and Zn.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611000043.5A CN107102760A (en) | 2010-03-08 | 2011-03-08 | Electronic installation and electronic system |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010-050941 | 2010-03-08 | ||
| JP2010050941 | 2010-03-08 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611000043.5A Division CN107102760A (en) | 2010-03-08 | 2011-03-08 | Electronic installation and electronic system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102193228A CN102193228A (en) | 2011-09-21 |
| CN102193228B true CN102193228B (en) | 2016-12-14 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001292276A (en) * | 2000-01-31 | 2001-10-19 | Semiconductor Energy Lab Co Ltd | Contact area sensor and display device provided with the same |
| CN101149491A (en) * | 2007-11-02 | 2008-03-26 | 友达光电股份有限公司 | Touch control type display light signal detection method and display device |
| CN101281313A (en) * | 2007-04-05 | 2008-10-08 | 精工爱普生株式会社 | Liquid crystal device, image sensor, and electronic apparatus |
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001292276A (en) * | 2000-01-31 | 2001-10-19 | Semiconductor Energy Lab Co Ltd | Contact area sensor and display device provided with the same |
| CN101281313A (en) * | 2007-04-05 | 2008-10-08 | 精工爱普生株式会社 | Liquid crystal device, image sensor, and electronic apparatus |
| CN101149491A (en) * | 2007-11-02 | 2008-03-26 | 友达光电股份有限公司 | Touch control type display light signal detection method and display device |
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Granted publication date: 20161214 |