CN102187237A - Nanowire bolometer photodetector - Google Patents
Nanowire bolometer photodetector Download PDFInfo
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- CN102187237A CN102187237A CN2009801415235A CN200980141523A CN102187237A CN 102187237 A CN102187237 A CN 102187237A CN 2009801415235 A CN2009801415235 A CN 2009801415235A CN 200980141523 A CN200980141523 A CN 200980141523A CN 102187237 A CN102187237 A CN 102187237A
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- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
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- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
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- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0808—Convex mirrors
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- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
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- G01J5/0815—Light concentrators, collectors or condensers
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- G01J5/0853—Optical arrangements having infrared absorbers other than the usual absorber layers deposited on infrared detectors like bolometers, wherein the heat propagation between the absorber and the detecting element occurs within a solid
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- G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
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Abstract
A photodetector for the detection of radiated electromagnetic energy includes at least one bolometer nanowire (100) disposed at least partially within a photon trap (205, 305, 405, 605). The at least one nanowire (100) has at least one blackened surface (110). The blackened surface is configured to absorb radiated electromagnetic energy ranging from far-infrared light to visible light.
Description
Cross reference to related application
The application requires the right of priority of the U.S. Provisional Patent Application sequence number No. 61/106,961 that submits to the name of Alexandre M.Bratkovski etc. on October 20th, 2008.
Background technology
Bolometer (bolometer) is a kind of device that can detect electromagnetic radiation according to the surveyed change of the physical attribute of the material of absorption of electromagnetic radiation.Absorbing material can for example experience the rising of temperature when being utilized the electromagnetic energy radiation of the resistance that influences this material.Therefore, some bolometer measurements have the resistance of known dimensions and a slice absorbent material under controlled condition, quantitative really to infer by the electromagnetic radiation of this absorbed, and, infer near the amount of the electromagnetic radiation of existence absorbent material by expansion.
Bolometer is configured to measure in the photoelectric detector of thermal-radiating electronic installation through being usually used in.For example, the night vision sensor of some type adopts photoelectric detector based on bolometer to detect infrared light at each pixel place.But current available bolometer is because they only detect the fact of the radiation in the narrow wavelength band of expression heat energy and are being limited aspect the useful application.In addition, a lot of current available bolometers become more insensitive under environment temperature (for example 200-300k).
Description of drawings
Accompanying drawing illustrates the various embodiment of the principles described herein, and is the part of instructions.Shown embodiment only is an example, and does not limit the scope of claim.
Figure 1A, 1B and 1C are the diagrams according to the illustrative bolometer nano wire various exemplary embodiments of the principles described herein, that be used for photodetector application (nanowire).
Fig. 2 be according to the broken section of the illustrative nano wire bolometer photoelectric detector of an exemplary embodiment of the principles described herein, skeleton view.
Fig. 3 is the sectional view according to the illustrative nano wire bolometer photoelectric detector of an exemplary embodiment of the principles described herein.
Fig. 4 be according to the broken section of the illustrative nano wire bolometer photoelectric detector of an exemplary embodiment of the principles described herein, skeleton view.
Fig. 5 be according to the broken section of the illustrative nano wire bolometer photoelectric detector of an exemplary embodiment of the principles described herein, skeleton view.
Fig. 6 be according to the broken section of the illustrative nano wire bolometer photoelectric detector of an exemplary embodiment of the principles described herein, skeleton view.
Fig. 7 be according to the broken section of the illustrative nano wire bolometer photoelectric detector of an exemplary embodiment of the principles described herein, skeleton view.
Fig. 8 is the process flow diagram of illustrative method that is used to detect the electromagnetic radiation energy according to an exemplary embodiment of the principles described herein.
Spread all over accompanying drawing, identical reference number is represented similar but may not components identical.
Embodiment
As mentioned above, bolometer can be used in the photoelectric detector of electronic installation.But the limitation part of current available bolometer is that they only can detect the radiation from narrow relatively wavelength band.
This instructions discloses the photoelectric detector based on bolometer, and it can detect the broad thermography of the electromagnetic radiation energy in the scope from the far infrared to the visible wavelength.This photoelectric detector comprises at least one nano wire, and described nano wire is at least partially disposed in the photon trap, and wherein, described at least one nano wire comprises melanism (blackened) surface that is configured to absorb from the far infrared to the visible light.In this band, can determine by the change of measuring the resistance in this at least one nano wire by the amount of the detected light of photoelectric detector.
As employed in this specification and the appended claims, term " nano wire " expression has the slim-lined construction of the radius that typically is lower than 50nm.
As employed in this specification and the appended claims, term " photon trap " represents that the electromagnetic radiation energy limited that a kind of structure, this structure are designed to will be directed at least provisionally in this structure does not escape into outside this structure to the interior internal reflection of this structure.
As employed in this specification and the appended claims, term " light " expression has the electromagnetic radiation energy of the wavelength between about 20 μ m and about 380nm.
As employed in this specification and the appended claims, term " visible light " expression has at approximately 380nm and approximately the electromagnetic radiation energy of the wavelength between the 760nm.
As employed in this specification and the appended claims, term " far infrared " expression has the electromagnetic radiation energy of the wavelength between about 8 μ m and about 1mm.
In the following description, for the purpose of explaining, many details have been illustrated so that the thorough understanding to native system and method to be provided.Yet to those skilled in the art, it is evident that not to have realizing native system and method under the situation of these details.In instructions, quote " embodiment ", " example " or similar language throughout and mean that combine specific feature, structure or the characteristic described is included at least among this embodiment with this embodiment or example, but not necessarily comprise in other embodiments.Everywhere the phrase " in one embodiment " or various examples of similar phrase differ to establish a capital and refer to same embodiment in instructions.
Principle disclosed herein now will be by discussing with reference to illustrative nano wire bolometer, illustrative photoelectric detector and illustrative light detection method.
Illustrative nano wire bolometer
With reference now to Figure 1A, 1B and 1C,, (not necessarily proportionally draw) has been shown illustrative bolometer nano wire (100).Figure 1A shows the external perspective view of bolometer nano wire (100), and Figure 1B and 1C are the different sectional views that may embodiment of the nano wire (100) that is used for Figure 1A.
Nano wire (100) can comprise semiconductor core (105), and this semiconductor core (105) uses any technology of the application-specific that can adapt to the principles described herein to make.Semiconductor core (105) can include but not limited at least a semiconductor material, such as silicon, germanium and alloy thereof.The nano wire (100) that meets this instructions principle can have at about 30 μ m and the about radius between the 50nm.
As shown in Figure 1A, 1B and 1C, nano wire (100) can comprise melanism surface (110).This melanism can realize that described polymkeric substance has at least a dyestuff of the semiconductor material of nano wire (100) in the electromagnetic radiation at transparent inherently wavelength place, its place that be configured to be absorbed in by the outside that utilizes polymer-coated nano wire (100).For example, a kind of dyestuff that can comprise in this polymkeric substance is the carbon black dyestuff.Additionally or alternatively, can comprise in polymkeric substance that multiple dyestuff or other light absorption materials promote the absorption of the electromagnetic energy of wavelength as far as possible on a large scale.In certain embodiments, can apply a plurality of polymer coatings, to realize the expectation melanism effect on the nano wire (100) to the core of semiconductor material.
As shown in Fig. 1 C, in certain embodiments, the end (115,120) of semiconductor core (105) can be that the p type mixes or the n type mixes with the telecommunication of facility to respective electrode.Alternatively, as shown in Figure 1B, semiconductor core (105) can keep intrinsic along the length of this nano wire (100).
Illustrative photoelectric detector
With reference now to Fig. 2,, illustrative photoelectric detector (200) is shown.This photoelectric detector comprises and is arranged on a plurality of melanism nano wires (100) consistent with those nano wires Figure 1A-1C in the photon trap (205).Photon trap (205) can be included in semiconductor substrate (210) and go up the open reflection cavity that forms.The wall (215,220) of photon trap (205) can be formed by the semiconductor material that mixes, and is electrically reached and physically be coupled to nano wire (100), and nano wire (100) can flatly extend to second wall (220) from first wall (215).One or more layers oxide (225) can insulate first and second walls (215,220) each other and with semiconductor substrate (210).
The inside surface of photon trap (205) can be coated with reflection horizon (230), and described reflection horizon (230) are such as for example silver and/or aluminium lamination.Wall (215,220) can keep electric insulation each other by for example interruption in reflection horizon (230) and/or the insulation course that is provided with between the conductiving doping portion of reflection horizon (230) and wall (215,220).Additionally or alternati, wherein nano wire bolometer (100) joined wall (215, each side of nano wire bolometer (100) 220) be right after periphery around each wall (215,220) in the zone, can not have the reflecting material of reflection horizon (230).In this example, the inside surface of the first wall (215) of photon trap (205) and semiconductor substrate (210) at angle, thereby form tilting mirror.Application-specific on the optimal adaptation the principles described herein is decided, and can use a lot of different shapes and the reflecting surface of structure in photon trap (205).The orientation of the reflecting surface in the photon trap (205) can be configured to will be directed at least provisionally the internal reflection of electromagnetic radiation energy limited in this structure in this structure, and thus the light that is received is concentrated on nano wire (100) near.For example, shown in Figure 2 from the source example path (235,240) of the light of (245) radiation; Radiant light leave photon trap (205) before this path (235,240) be included in a plurality of resiliences in the photon trap (205).
To provide the brief explanation of the physical attribute of photoelectric detector (200) about the effect of the electromagnetic radiation that absorbs now with the bolometer nano wire (100) that is arranged in the photon trap (205).
The amount of the radiation power that is absorbed by one or more nano wires equals Φ
NW=Φ
SA/N, wherein, Φ
SBe the density (power flow) of radiation power, A=L
2Be the area (for example L=30 μ m) of photosensitive region, and N is the quantity of nano wire.(this light concentrator is made by one group of silicon or Ge nanoline (100) with melanism surface at the photoelectric detector with light concentrator (200), this melanism surface is absorbed in the electromagnetic radiation in the scope from the far infrared to the visible light) in, the net heat balance equation can be write as:
(equation 1).
In equation 1, c and ρ are respectively the specific heat and the density of the semiconductor material in the core of nano wire (100).
TBe average nano wire temperature,
v 0 =sL 0 ,
s 0 =
π r 0 2 ,
S 0 =2 π r 0 L 0 ,
r 0 , and
Be respectively volume, area of section, surface area, radius and the length of nano wire (100).
ηThe quantum efficiency that expression absorbs.J in the equation 1
R, J
Air, J
ThExpression is corresponding to the heat flux (heat flow) of the outflow of radiation cooling, thermal diffusion in the surrounding air and the end by nano wire (100).Can select circular cylindrical coordinate, wherein, the x axle is along the longitudinal axis of nano wire (100), and r is the radius vectors perpendicular to the longitudinal axis of nano wire (100).Consider signal radiation power Φ
SSmall, described flow can be expressed as:
(equation 2)
And equation 1 can be rewritten as following form:
Herein
σ=5.67 x 10
-8W/m
2K
4Be Si Difen-Boltzmann constant, k and
κ Air Be respectively the semiconductor core of nano wire (100) and the temperature conductivity of air, and
L Air Be airborne thermal diffusion length:
Wherein,
c Air With
ρ Air Be respectively the specific heat and the density of air.Estimation illustrates, and determines bolometer inertia by the thermal diffusion of the end by nano wire (100).Therefore, equation 3 can be expressed as:
For length is the silicon nanowires (100) of 50 μ m,
≈ 2 * 10
-4Second.Because typical refresh rate is 40 Hz, be according to the temperature variation of the bolometer nano wire (100) of equation 5:
Radius
r 0 =The resistance of the nano wire of 30nm (100) can surpass 10
9Ω/CM.Length is
L 0 =The nano wire of 50 μ m (100) has resistance
R NW 〉=5 x 10
6Ω.All-in resistance is
R=
R NW /
NThe representative temperature dependence of nano wire resistance is:
Change in voltage is provided by following formula:
(equation 7)
According to equation 6 and 7, voltage and current sensitivity equals:
Use typical silicon parameter,
Therefore, for N〉15, current sensitivity
S 1 9.As a comparison, the current sensitivity of photodiode and p-i-n diode equals:
So, for the IR detecting device in the scope of 3-5 μ m,
η≤ 0.8, make
S 1 ≤ 4 A/W.Therefore, based on the bolometer nano wire (100) and the N of melanism〉this photoelectric detector (200) of 16 is compared traditional photodiode and p-i-n diode makes S
1Increase above 4 times.
The verification and measurement ratio of bolometer nano wire (100) can use the equal square wave of energy to move to estimate that it according to the standard thermokinetics is:
The dispersion of energy hunting (dispersion) is provided by following formula:
(
τ=10
-4Second and
ω＜10
3Hz).According to equation 12 and 7, draw:
Verification and measurement ratio is (with cm Hz
1/2/ W is the unit meter) determine by following formula:
Work as L=L
0=3 x 10
-5M, r
0=30nm, Φ=2[W/m.K], T=200K, η=0.8 o'clock obtains
D*≈ 10
11Cm Hz
/ W.This means owing to concentrate by the light of photon trap (205) execution, photoelectric detector (200) based on silicon bolometer nano wire (100) can have near the limited Photoelectric Detection of background (Background Limited Photodetection, the verification and measurement ratio of the limit BLIP), wherein
Importantly, the photoelectric detector (200) with the bolometer nano wire (100) that is arranged in the photon trap (205) can absorb the heat radiation of all wavelengths, comprises the heat radiation of the wavelength in the scope of 8-12 μ m.Therefore, this can be used to detect the electromagnetic radiation in the wavelength coverage of 12 μ m at 0.5 μ m based on photoelectric detector of bolometer, though its under the normal temperature of T=300K, also can realize corresponding to
D*=(2-3) x 10
10The BLIP verification and measurement ratio.
With reference now to Fig. 3,, the side cross-sectional view of another illustrative photoelectric detector (300) is shown, described photoelectric detector (300) comprises a plurality of melanism bolometer nano wires (100), described bolometer nano wire (100) is set at semiconductor substrate (310) and goes up in the photon trap of making (305), and be suspended between first and second walls (315,320) of doping of photon trap (305).(200, Fig. 2), first and second walls (315,320) of photon trap (305) are by oxide skin(coating) (325) and semiconductor substrate (310) electric insulation and electric insulation each other as the photoelectric detector shown in Fig. 2.Also on the inside surface in the chamber of photon trap (305) reflection horizon (330) is set, described inside surface comprises the bottom in this chamber and the inside surface of first and second walls (315,320).First and second walls (315,320) can keep electric insulation each other with reference to figure 2 disclosed any measures by above adopting.Be different from the photoelectric detector shown in Fig. 2 (200, Fig. 2), wall (315,320) shown in two of the photoelectric detector of this example (300) with respect to semiconductor substrate (310) at angle, thereby form at least two tilting mirrors.
Can detect electromagnetic radiation by the resistance variations that monitors bolometer nano wire (100).For example, can be used for applying known voltage between two terminals at the two ends that are connected to nano wire (100) poor for voltage source (350).In this example, the wall of doping (315,320) is electrically connected to nano wire (100), and as electrode.The change of the amount of the emittance that is absorbed by nano wire (100) can cause the change of the resistance of nano wire (100), and as the result of the known electric pressure reduction that is applied to two terminals, it can cause the variation of the electric current that flows again between these two terminals.Can pass through meter (355) and measure these changes of the electrical specification of electric current.In this example, meter (355) is the current measurement meter that is connected in series with voltage source (350).The measured electric current that flows through circuit can be used for the change of the resistance of definite nano wire (100) then, and by expansion, determines by the amount of the electromagnetic radiation energy of nano wire (100) absorption.Additionally or alternatively, the application-specific of visual adaptation the principles described herein and deciding can be used the change of any other meter (355) with the attribute of measuring electric current.
With reference now to Fig. 4,, another illustrative photoelectric detector (400) is shown.As previous example, photoelectric detector (400) comprises a plurality of melanism bolometer nano wires (100), described bolometer nano wire (100) is arranged on semiconductor substrate (410) and goes up in the photon trap of making (405), and be suspended between first and second walls (415,420) of doping of photon trap (405).First and second walls (415,420) of photon trap (405) are by oxide skin(coating) (425) and semiconductor substrate (410) electric insulation and electric insulation each other.Also on the inside surface in the chamber of photon trap (405) reflection horizon (430) is set, described inside surface comprises the bottom in this chamber and the inside surface of first and second walls (415,420).Described first and second walls (415,420) can be by adopting before any measure of describing with reference to figure 2 electric insulation each other.
The photon trap (405) of this example comprises open reflection cavity, wherein in the top, chamber of photon trap (405) top reflector (445) is set.At least the downside of this top reflector (445) can comprise reflection horizon (450), it creates top mirror, described top mirror is configured in the chamber with the electromagnetic energy reflected back photon trap (405) of radiation, thereby increases near the number of times that electromagnetic energy is directed to bolometer nano wire (100).
With reference now to Fig. 5,, another illustrative photoelectric detector (500) is shown.This photoelectric detector (500) is similar to the photoelectric detector of Fig. 4, and except the bolometer nano wire (100) of this example extends up to top reflector (445) from hearth electrode (505), this top reflector (445) is also as second electrode.
With reference now to Fig. 6,, another illustrative photoelectric detector (600) is shown.As previous example, this photoelectric detector (600) comprises a plurality of melanism bolometer nano wires (100), described bolometer nano wire (100) is arranged on semiconductor substrate (610) and goes up in the photon trap of making (605), and be suspended between first and second walls (615,620) of doping of photon trap (605).On the inside surface in the chamber of photon trap (605), reflection horizon (630) is set, and top reflector (645) is set in the top in the chamber of photon trap (605).Described first and second walls (415,420) can be by adopting before any measure of describing with reference to figure 2 electric insulation each other.
Additionally, the reflecting surface of the reflective inner surface in photon trap (605) chamber and top reflector (645) can comprise one or more V-type grooves (650,655,660).These V-type grooves (650,655,660,665) can be assisted towards the electromagnetic energy of bolometer nano wire (100) reflection institute radiation.
Fig. 7 illustrates the illustrative photoelectric detector (700) of the photoelectric detector that is similar to Fig. 6.The reflecting surface (750) of the top reflector (645) of this photoelectric detector (700) is being conical in shape.
Should be appreciated that, under the situation of the principle that meets this instructions, can in the photon trap, use any various geometric configuratioies, size and material.For example, decide, can use more complicated trap on the application-specific of optimal adaptation the principles described herein, it comprise the grid of conical refractor and/or reverberator, the variation in reflecting surface or groove, suspend complete in refractor etc.
Illustrative method
With reference now to Fig. 8,, shows the process flow diagram of the illustrative method (800) that detects light.This method (800) can for example be carried out by one or more electronic installations, and described one or more electronic installations comprise at least one photoelectric detector, and described photoelectric detector comprises the one or more melanism nano wires that are arranged in the photon trap.
This method (800) comprises emittance reception (step 805) in the photon trap with at least one melanism nano wire, and measures the resistance of (step 810) this at least one nano wire.For example can measure the resistance of (step 810) this at least one nano wire as follows: it is poor to apply (step 815) known voltage at described at least one nano wire two ends, measures the electric current that flows through nano wire that (step 820) obtained by the known voltage difference.The resistance linear dependence of this electric current and nano wire.
In case measured the resistance or the electric current of (step 810) this at least one nano wire, can determine that (step 825) is by the relative quantity of the emittance of described at least one nano wire absorption according to the intrinsic physical attribute of measured resistance and nano wire.
Provide embodiment and example that as above description only is used to illustrate and describe described principle.This description be not intended to be exhaustive or these principles are limited to any disclosed precise forms.Can much revise and modification according to above instruction.
Claims (15)
1. photoelectric detector (200 that comprises at least one bolometer nano wire (100), 300,400,500,600,700), described at least one bolometer nano wire (100) is at least partially disposed on photon trap (205,305,405,605) in, wherein, described nano wire (100) comprises the melanism surface (110) that is configured to absorb from the far infrared to the visible light.
2. photoelectric detector according to claim 1 (200,300,400,500,600,700), wherein, described nano wire (100) comprises at least a of silicon, germanium and sige alloy.
3. according to any one described photoelectric detector (200,300,400,500,600,700) in the aforementioned claim, wherein, described photon trap (205,305,405,605) comprises open reflection cavity.
4. photoelectric detector (200 according to claim 3,300,400,500,600,700), wherein, the reflection cavity of described opening comprises following at least one clock: with respect to side reflector, the cone-shaped reflector of described at least one nano wire (100) inclination and the reverberator with at least one V-type groove.
5. according to any one described photoelectric detector (200,300,400,500 in claim 3 and 4,600,700), wherein, described photon trap (205,305,405,605) also comprise and be arranged on top, described chamber and be configured to reflect light to reverberator (445,645) in the described chamber.
6. according to any one described photoelectric detector (200,300,400,500,600,700) in the claim 3,4 and 5, wherein, described at least one nano wire (100) by horizontal suspended on described reflection cavity.
7. according to any one described photoelectric detector (200 in the aforementioned claim, 300,400,500,600,700), wherein, described at least one nano wire (100) electrical couplings is to first electrode at the first end place that is arranged on described at least one nano wire (100) and second electrode that is arranged on the second end place of described at least one nano wire (100).
8. according to any one described photoelectric detector (200 in the aforementioned claim, 300,400,500,600,700), wherein, described melanism surface (110) comprises following at least a: carbon black layer, and the polymkeric substance with the embedding light absorption material that is configured to absorb from the far infrared to the visible light.
9. a photoelectric detector (300) comprising:
Be arranged on first and second electrodes (315,320) on the opposite side of reflection cavity;
Be at least partially disposed on a plurality of nano wires (100) in the described reflection cavity, wherein, each described nano wire (100) comprise electrical couplings to the first end of described first electrode (315), electrical couplings to described second electrode (320) the second end and be configured to absorb melanism surface (110) from the far infrared to the visible light;
Voltage source (350), it is configured to apply voltage difference between described first and second electrodes (315,320); And
Meter (355), it is configured to monitor at least one electrical specification of the electric current that flows between described first and second electrodes (315,320), and determines by the amount of the light of described nano wire (100) absorption according to described at least one electrical specification.
10. photoelectric detector according to claim 9 (300), wherein, described nano wire (100) comprises at least a in silicon, germanium and the sige alloy.
11. according to any one described photoelectric detector (300) in claim 9 and 10, wherein, described electrical specification is the amplitude of the measurement of described electric current.
12., also comprise the top reflector (445,645) that is arranged on described reflection cavity top according to any one the described photoelectric detector (300) in the claim 9,10 and 11.
13. a method that detects emittance, described method comprises:
Described emittance is received photon trap (205,305,405,605) in, described photon trap comprises and is at least partially disposed on described photon trap (205,305,405,605) Nei at least one nano wire (100), described nano wire (100) has the melanism surface (110) that is configured to absorb from the far infrared to the visible light;
Measure the resistance of described at least one nano wire (100); And
Determine by the amount of the light of described at least one nano wire (100) absorption according to the resistance of described measurement.
14. method according to claim 13, wherein, described photon trap comprises reflection cavity.
15. according to any one the described method in claim 13 and 14, wherein, described photon trap also comprises top reflector (445,645), described top reflector (445,645) is arranged on described reflection cavity top and is configured to the electromagnetic energy of radiation is directed in the described chamber.
Applications Claiming Priority (3)
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| US10696108P | 2008-10-20 | 2008-10-20 | |
| US61/106961 | 2008-10-20 | ||
| PCT/US2009/037019 WO2010047844A2 (en) | 2008-10-20 | 2009-03-12 | Nanowire bolometer photodetector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102187237A true CN102187237A (en) | 2011-09-14 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009801415235A Pending CN102187237A (en) | 2008-10-20 | 2009-03-12 | Nanowire bolometer photodetector |
Country Status (7)
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| US (1) | US8178842B2 (en) |
| JP (1) | JP5149997B2 (en) |
| KR (1) | KR20110074605A (en) |
| CN (1) | CN102187237A (en) |
| DE (1) | DE112009002564T5 (en) |
| TW (1) | TW201027051A (en) |
| WO (1) | WO2010047844A2 (en) |
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| CN111439722A (en) * | 2020-04-02 | 2020-07-24 | 南京大学 | Micro-bolometer and preparation method thereof |
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| US8664583B2 (en) * | 2011-07-01 | 2014-03-04 | The Boeing Company | Nonlinear optical surface sensing with a single thermo-electric detector |
| JP6320768B2 (en) * | 2014-01-30 | 2018-05-09 | 国立大学法人 東京大学 | Optical element |
| KR101581559B1 (en) * | 2014-05-30 | 2015-12-31 | 경희대학교 산학협력단 | Photo Detecting Element and Method for Manufacturing The Same and Photo Detector Using The Same |
| US9250388B1 (en) * | 2014-07-17 | 2016-02-02 | Intel Corporation | Optical device using echelle grating that provides total internal reflection of light |
| US9945719B2 (en) * | 2014-12-15 | 2018-04-17 | The Boeing Company | High resolution thermo-electric nanowire and graphene coupled detector system |
| AT517438B1 (en) | 2015-07-07 | 2018-10-15 | Alfred Dipl Ing Fuchs | DEVICE AND METHOD FOR DETECTING RADIATION |
| US10197737B2 (en) | 2017-06-19 | 2019-02-05 | Intel Corporation | Low back reflection echelle grating |
| US11626484B2 (en) * | 2017-09-20 | 2023-04-11 | Wisconsin Alumni Research Foundation | High efficiency room temperature infrared sensor |
| WO2021153831A1 (en) * | 2020-01-31 | 2021-08-05 | 주식회사 크레파스테크놀러지스 | Photo sensor using micro-structure |
| KR102554657B1 (en) * | 2020-10-22 | 2023-07-13 | 한국과학기술원 | Bolometer and manufacturing method thereof |
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Also Published As
| Publication number | Publication date |
|---|---|
| JP2012506056A (en) | 2012-03-08 |
| US20110168894A1 (en) | 2011-07-14 |
| DE112009002564T5 (en) | 2011-09-29 |
| TW201027051A (en) | 2010-07-16 |
| WO2010047844A2 (en) | 2010-04-29 |
| KR20110074605A (en) | 2011-06-30 |
| JP5149997B2 (en) | 2013-02-20 |
| US8178842B2 (en) | 2012-05-15 |
| WO2010047844A3 (en) | 2010-07-01 |
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