CN102185004A - Graphene field effect transistor with photoconduction effect and infrared detector - Google Patents
Graphene field effect transistor with photoconduction effect and infrared detector Download PDFInfo
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- CN102185004A CN102185004A CN 201110082999 CN201110082999A CN102185004A CN 102185004 A CN102185004 A CN 102185004A CN 201110082999 CN201110082999 CN 201110082999 CN 201110082999 A CN201110082999 A CN 201110082999A CN 102185004 A CN102185004 A CN 102185004A
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Abstract
The invention belongs to the technical field of graphene, and particularly discloses a graphene field effect transistor (GFET) with photoconduction effect and an infrared detector. The GFET comprises a graphene channel layer which generates photoconduction effect under infrared radiation operatively so as to change the electric characteristic of the GFET; the GFET is high in sensitivity and low in power consumption. The infrared detector manufactured by using the GFET does not need a refrigerating system, has low operating cost and is ultralight and ultrastable, the infrared absorbing bandwidth of the infrared detector can be adjusted according to the practical application need; and the problem that the traditional infrared detector is manufactured by complicated process and has hypertoxicity are also avoided; in addition, the infrared detector disclosed by the invention is especially suitable for application in sky-survey infrared detection.
Description
Technical field
The invention belongs to the Graphene technical field, be specifically related to a kind of graphene field effect transistor, relate in particular to Graphene effect transistor and based on the Infrared Detectors of this effect transistor with photoconductive effect.
Background technology
Continuous extension and depth along with mole (Moore) law, make that the device size of si-substrate integrated circuit is more and more nearer from physics limit, the numerous and confused proposition of international semiconductor technology circle surmounts silicon (Beyond Silicon) technology, wherein, Graphene (Graphene) is considered to be expected to most the material of substituted for silicon.
Graphene is the two dimensional crystal that the carbon atom on a kind of individual layer honeycomb crystal lattice is formed, and the thickness of mono-layer graphite is about 0.35 nanometer.Fig. 1 is the basic structure schematic diagram of Graphene.Current, the graphite below ten layers all is looked at as Graphene.(for example, its intensity can reach 130GPa, and carrier mobility can reach 250000cm because Graphene has superconductivity, high-intensity mechanical performance etc.
2/ VS), its since 2004 are found by extensive concern.
Utilize the characteristic of semiconductor of Graphene can be made into field-effect transistor (Graphene Field-Effect-Transistor, GFET).Wherein, Graphene is used to form the raceway groove of GFET, and by the control gate terminal voltage, it can modulate the size of current of raceway groove, also is the size of current between modulation source end and the drain terminal.
Notice that simultaneously at optoelectronic areas, Infrared Detectors mainly is to utilize the photoconductive effect of compound semiconductor material to come the sensing infrared ray.At present, in each wave band Infrared Detectors, no matter be that InGaAs base, InSb base or quantum well type are surveyed QWIP and mercury cadmium telluride (MCT) base, all need to work at low temperatures and refrigerating system that needs are extra, this has limited its application, and application cost is higher.
Summary of the invention
The objective of the invention is a kind of cost of proposition lower, and GFET with infrared acquisition function.Infrared Detectors based on this GFET is provided simultaneously.
GFET with infrared acquisition function provided by the invention, be a kind of graphene field effect transistor (GFET), it comprises the Graphene channel layer, described Graphene channel layer operationally produces photoconductive effect under infrared radiation, so that the electrology characteristic of described graphene field effect transistor changes.
According to the preferred embodiment of GFET of the present invention, the graphite number of plies of described Graphene channel layer is 2 to 10 layers.
Preferably, the energy gap of described Graphene channel layer is adjustable in the scope of 1 milli electronvolt to 250 milli electronvolt.
Preferably, described ultrared wavelength is more than or equal to 5 microns.
Preferably, determine that described ultrared wave-length coverage determines according to the energy gap of described Graphene channel layer.
Preferably, described graphene field effect transistor also comprises gate dielectric layer, and described gate dielectric layer is that thickness range is the high κ dielectric layer of 10 dust to 100 dusts.
In one embodiment, described gate dielectric layer material is the hexagonal boron nitride or the HfO of atomic layer deposition growth
2
In another embodiment, described gate dielectric layer material is the Al of atomic layer deposition growth
2O
3
In another embodiment, the described gate dielectric layer material Al that is the nanometer monocrystalline band structure
2O
3, the Al of described nanometer monocrystalline band structure
2O
3Mask as the described Graphene channel layer of etching.
According to the graphene field effect transistor of another embodiment provided by the invention, described graphene field effect transistor is a back grid structure.
Preferably, the gate dielectric layer layer material of described graphene field effect transistor is a hexagonal boron nitride.
Preferably, described hexagonal boron nitride is for peeling off from the monocrystalline hexagonal boron nitride and placing on the described graphene field effect transistor gate electrode.
Preferably, described Graphene channel layer forms by CVD (Chemical Vapor Deposition) method.
Preferably, the temperature range of described chemical vapor deposition is 300 ℃-400 ℃ substantially.
According to another aspect of the invention, provide a kind of Infrared Detectors.The infrared induction primary element of this Infrared Detectors adopts above arbitrary described graphene field effect transistor.
Technique effect of the present invention is, among the present invention, utilize the photoconductive effect of Graphene channel layer among the GEFT to survey infrared ray, it has the characteristics highly sensitive, low in energy consumption, that ultralight is overstable, and,, do not want refrigerating system by the Infrared Detectors that this GEFT makes, operating cost is low, INFRARED ABSORPTION bandwidth and can be adjustable according to practical application request; Also avoided existing Infrared Detectors complex manufacturing and had hypertoxic problem, the infrared acquisition that is particularly suitable for touring the heavens is used.
Description of drawings
Fig. 1 is the basic structure schematic diagram of Graphene.
Fig. 2 is the basic structure schematic diagram of the GEFT that provides according to one embodiment of the invention.
Fig. 3 is the basic structure schematic diagram of the GEFT that provides according to further embodiment of this invention.
Embodiment
Below in conjunction with accompanying drawing and reference example, further describe the present invention.The invention provides preferred embodiment, but should not be considered to only limit to embodiment set forth herein.In the drawings, for clear expression, amplified the thickness in layer and zone, but should not be considered to the proportionate relationship that strictness has reflected physical dimension as schematic diagram.
Reference diagram is the schematic diagram of idealized embodiment of the present invention, and embodiment shown in the present should not be considered to only limit to the given shape in the zone shown in the figure, but comprises resulting shape, the deviation that causes such as preparation.For example the curve that obtains of dry etching has crooked or mellow and full characteristics usually, but in embodiment of the invention diagram, all represents with rectangle, and the expression among the figure is schematically, but this should not be considered to limit the scope of the invention.
The basic structure schematic diagram of the GEFT that provides according to one embodiment of the invention is provided.As the MOSEFET of routine, this GFET 10 comprises channel layer 110, source end (S) 130, drain terminal (D) 140, gate dielectric layer 120 and grid end (G) 150.As shown in Figure 2, channel layer 110 is formed on the substrate 100, and in this embodiment, substrate 100 is for growing SiO on Si
2Lamination layer structure (the SiO of film
2/ Si), and this substrate 100 is an infrared-transparent material, also is that infrared ray can penetrate this substrate.Preferably, this substrate can be penetrated by middle infrared (Mid-IR) more than 5 microns and far infrared.But the particular type of substrate 100 is not limited by the embodiment of the invention.Channel layer 110 is in particular Graphene in this invention, and it is the Graphene that comprises two-layer or two-layer above graphite, and preferably, Graphene channel layer 110 is the Graphene of 2 to 10 layers of graphite.People such as Frank Schwierz have reported that the most about 250meV(electronvolt in the least appears in Graphene after bilayerization in 2010 of " Nature Nanotechnology " magazine, the name of the 5th phase 487-496 page or leaf are called the article of " Graphene transistor ") energy gap, hence one can see that, this Graphene 110 has characteristic of semiconductor, it can form carrier channels under the modulation of the voltage Vg of grid end 150.
Simultaneously, in the present invention, considered the photoconductive effect of grapheme material, this GEFT has been applied to infra-red detection.In this embodiment, Graphene channel layer 110 can produce photoconductive effect under infrared radiation, and it causes the carrier concentration of raceway groove to change, thereby can cause Ids to change, and also is that the electrology characteristic of GEFT changes.Therefore, can survey infrared ray by the variation (under the situation that Vg and Vsd fix) that detects Ids.In addition, (can reach 20000-50000cm because the carrier mobility of Graphene 110 is very high
2/ VS), the photoconductive effect of Graphene channel layer 110 under infrared ray can obtain reflection rapidly, and therefore, this GEFT has high sensitivity to infrared acquisition, and, need not the necessary refrigerating system of conventional infrared detector, application cost is low.
Simultaneously.We find that the Graphene of multiple stratification has the adjustable characteristic of energy gap, and for example, the Graphene of bilayerization has energy gap (Eg) adjustable in 1-250 meV scope.Therefore, in this embodiment, Graphene channel layer 110 is under the control of grid terminal voltage Vg, and its energy gap also can change.According to the principle of photoconductive effect, when the photon energy of irradiation
HvWhen being equal to or greater than semi-conductive energy gap Eg, photon can be with the electron excitation in the valence band to conduction band, thereby the electronics, hole that produce conduction are to (also being charge carrier); The response ripple limit λ of intrinsic photo-conductivity effect
cCan calculate according to following formula (1):
λ
c=hc/Eg=1.24/Eg (μm) （1）
Wherein, h is a Planck's constant.
Therefore, when Eg approximated 0.25meV, the response ripple of intrinsic photo-conductivity effect was limited to 5 microns.Particularly, can regulate the grid terminal voltage to regulate energy gap Eg, so that this GEFT 10 can survey the infrared ray of particular range of wavelengths according to the scope of the Infrared wavelength of required detection.According to above calculating as can be known, this GEFT 10 can survey infrared in more than about 5 micron wave lengths and far infrared (normally, far wave-length coverage is 25 μ m-1000 μ m) at least, and with respect to existing infrared detector, absorption band is wideer.
Simultaneously, known, when growing gate dielectric layer 120 on the Graphene channel layer 110, thereby can cause damage to reduce carrier mobility greatly to the lattice structure of Graphene.Therefore, gate dielectric layer 120 preferably adopts ultra-thin high κ (dielectric constant) dielectric layer.The thickness range of gate dielectric layer 120 is approximately 10 dust to 100 dusts.
In one embodiment, gate dielectric layer 120 adopts the h-BN(hexagonal boron nitride), this is because h-BN and Graphene have essentially identical crystal structure, h-BN chemical b ` in an atomic layer plane is very strong, make the h-BN surface have very strong chemical inertness, almost do not have dangling bonds to exist, do not have the surface trap electric charge to exist yet, thus less to electron mobility influence in the Graphene.H-BN can adopt the ALD(atomic layer deposition particularly) method form.
In another embodiment, gate dielectric layer 120 adopts the Al of ALD growth
2O
3This is, because ALD is that a kind of thickness and uniformity control are accurate, the high κ dielectric layer growth means of strong, the low ultra-thin growth of defective of filling capacity.Routinely, in the ALD growth course, utilize water as presoma; And when ALD was applied to high κ dielectric layer growth on the Graphene, adopting this conventional method was to be not easy to realize high κ dielectric layer growth.In a preferred version, carry out surface treatment, for example NO at the upper surface of Graphene channel layer 110
2Handle, utilize NO
2-TMA(trimethyl aluminium) functionalization is carried out on Graphene 110 top layers, like this, can the ALD growth obtain the following Al that does not have pin hole of 10nm
2O
3Dielectric film.In another preferred version, at the upper surface of Graphene channel layer 110 growth PTCA(3,4,9,10-perylene tetracarboxylic acid, 3,4,9,10-perylene tetracarboxylic acids) the polymer buffer layer, ALD growth Al again
2O
3Dielectric film; Particularly, Graphene 110 was soaked 25--35 minute in PTCA solution, clean and dry up the growth chamber of putting into ALD then, under about 100 degrees centigrade condition, utilize TAM and water as the presoma Al that grows
2O
3This is because behind the PTCA preliminary treatment Graphene, introduce highdensity hydroxylate and stop perylene (carboxylate terminated perylene) molecule, obtain intensive parcel functional group simultaneously, thereby allow continuously grow ultra-thin AL on Graphene equably
2O
3Film.
Further, preferably, gate dielectric layer is the Al of single crystal nano-belt (nanoribbon) structure
2O
3Simultaneously, during composition definition Graphene channel layer 110, also with the Al of single crystal nano-belt
2O
3Gate dielectric layer (120) is an etch mask, and like this, Graphene channel layer 110 mobilities can better (reach 22400cm
2/ VS).
Continue as shown in Figure 2, the growing method of Graphene channel layer 110 has mechanical stripping method, graphene oxide chemical reduction method, heat treating process, the last epitaxial growth method of SiC and CVD (Chemical Vapor Deposition) method (CVD).For the preparation that makes this GEFT 10 is easy to integratedly and cost is low with integrated circuit preparation technology, preferably, adopt CVD method growth Graphene channel layer 110, be easy to realize the extensiveization preparation of GEFT like this.More preferably, the temperature conditions of CVD growth Graphene is 300-400 ℃.
The basic structure schematic diagram of the GEFT that provides according to further embodiment of this invention is provided.Than embodiment illustrated in fig. 2, the GEFT 30 main differences of this embodiment are to have adopted back grid structure.Similarly, this GFET 30 comprises channel layer 310, source end (S) 330, drain terminal (D) 340, gate dielectric layer 320 and grid end (G) 350, and it is corresponding with channel layer 110, source end (S) 130, drain terminal (D) 140, gate dielectric layer 120 and grid end (G) 150 shown in Figure 2 respectively.
As shown in Figure 3, grid end 350 is formed at SiO
2On/Si the substrate 100, form gate dielectric layer 320 on the grid end 350 earlier, the concrete material selection of gate dielectric layer 320 and preparation method etc. can be with reference to gate dielectric layers embodiment illustrated in fig. 2 120; Channel layer 310 is formed on the gate dielectric layer 320, and similarly, the concrete material selection of channel layer 310 and preparation method etc. also can be with reference to channel layers embodiment illustrated in fig. 2 110; Source end 330 and drain terminal 340 electrically connect with the two ends of channel layer 310 respectively.
Preferably, adopt the h-BN material at gate dielectric layer 320, h-BN can peel off and be transferred on the metal gate end 350 from ultrapure monocrystalline h-BN, and the Graphene of growing on h-BN then is as channel layer 310.Like this, the mobility of Graphene channel layer 310 still can remain on the high mobility level.
Need to prove that Graphene channel layer 110 or 310 concrete preparation method are not limited to above embodiment, along with the continuous development of preparation method of graphene, those skilled in the art can select the new process that is applicable to that relatively infrared acquisition is used.Simultaneously, gate dielectric layer 120 or 320 concrete material category and preparation method also are not limited to above embodiment, it also can be along with the continuous progress of grapheme material research and dielectric layer preparation method's continuous development, and selects the new material or the new process that are applicable to that mutually infrared acquisition is used.The infrared acquisition wave-length coverage of GEFT of the present invention also may be along with the progress (for example, the variation of the adjustable extent of energy gap) to the research of grapheme material, and does corresponding the variation.
Therefore, the GEFT of this invention can be applied to Infrared Detectors, and the infrared induction primary element of Infrared Detectors adopts GEFT of the present invention.Therefore, this Infrared Detectors highly sensitive, low in energy consumption, ultralight is overstable, and, refrigerating system not, operating cost is low, INFRARED ABSORPTION bandwidth and can be adjustable according to practical application request; Also avoid existing Infrared Detectors complex manufacturing and had hypertoxic problem.The infrared acquisition that is particularly suitable for touring the heavens is used.
Above example has mainly illustrated GEFT of the present invention and Infrared Detectors thereof.Although only the some of them embodiments of the present invention are described, those of ordinary skills should understand, and the present invention can be in not departing from its purport and scope implements with many other forms.Therefore, example of being showed and execution mode are regarded as illustrative and not restrictive, and under situation about not breaking away from as defined spirit of the present invention of appended each claim and scope, the present invention may be contained various modifications and replacement.
Claims (13)
1. graphene field effect transistor with photoconductive effect, it comprises the Graphene channel layer, it is characterized in that described Graphene channel layer operationally produces photoconductive effect so that the electrology characteristic of described graphene field effect transistor changes under infrared radiation; Described ultrared wavelength is more than or equal to 5 microns.
2. graphene field effect transistor as claimed in claim 1 is characterized in that, the graphite number of plies of described Graphene channel layer is 2 to 10 layers.
3. graphene field effect transistor as claimed in claim 1 or 2 is characterized in that, the energy gap of described Graphene channel layer is adjustable in the scope of 1 milli electronvolt to 250 milli electronvolt.
4. graphene field effect transistor as claimed in claim 3 is characterized in that, determines that described ultrared wave-length coverage determines according to the energy gap of described Graphene channel layer.
5. graphene field effect transistor as claimed in claim 1 is characterized in that described graphene field effect transistor also comprises gate dielectric layer, and described gate dielectric layer is that thickness is the high κ dielectric layer of 10 dust to 100 dusts.
6. graphene field effect transistor as claimed in claim 5 is characterized in that, described gate dielectric material is the hexagonal boron nitride or the HfO of atomic layer deposition growth
2, perhaps be the Al of atomic layer deposition growth
2O
3
7. graphene field effect transistor as claimed in claim 5 is characterized in that, described gate medium is the Al of nanometer monocrystalline band structure
2O
3, the Al of described nanometer monocrystalline band structure
2O
3Mask as the described Graphene channel layer of etching.
8. graphene field effect transistor as claimed in claim 1 or 2 is characterized in that, described graphene field effect transistor is a back grid structure.
9. graphene field effect transistor as claimed in claim 8 is characterized in that, the gate dielectric layer of described graphene field effect transistor is a hexagonal boron nitride.
10. graphene field effect transistor as claimed in claim 9 is characterized in that, described hexagonal boron nitride is for peeling off from the monocrystalline hexagonal boron nitride and placing on the described graphene field effect transistor gate electrode.
11. graphene field effect transistor as claimed in claim 1 or 2 is characterized in that, described Graphene channel layer forms by CVD (Chemical Vapor Deposition) method.
12. graphene field effect transistor as claimed in claim 11 is characterized in that, the temperature range of described chemical vapor deposition is 300 ℃-400 ℃ substantially.
13. an Infrared Detectors is characterized in that infrared detector cell adopts as each described graphene field effect transistor among the claim 1-12.
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