CN102163655A - Preparation method of LED (light-emitting diode) packaging module - Google Patents
Preparation method of LED (light-emitting diode) packaging module Download PDFInfo
- Publication number
- CN102163655A CN102163655A CN 201010618859 CN201010618859A CN102163655A CN 102163655 A CN102163655 A CN 102163655A CN 201010618859 CN201010618859 CN 201010618859 CN 201010618859 A CN201010618859 A CN 201010618859A CN 102163655 A CN102163655 A CN 102163655A
- Authority
- CN
- China
- Prior art keywords
- glue shell
- electrode
- package module
- led package
- counterbore
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Led Device Packages (AREA)
Abstract
The invention relates to a semiconductor lighting technology, in particular to a preparation method of an LED (light-emitting diode) packaging module, which comprises the following steps: S10, providing an electrode sheet, processing a plastic shell by injection molding, and clamping the electrode sheet in the plastic shell; S20, providing a copper column, and pressing the copper column into the plastic shell; S30, providing an LED chip, and performing die bonding on the top surface of the copper column; and S40, welding a gold wire, and connecting the chip with an electrode. The invention provides the preparation method of the LED packaging module, which has simple process.
Description
Technical field
The present invention relates to the semiconductor lighting technology, relate in particular to a kind of LED package module preparation method.
Background technology
The LED light fixture has the characteristics that the life-span is long, economize electric power, is applied to lighting field more and more widely.The preparation method of traditional LED package module mostly is based on substrate package, and insulation glue-line and circuit layer need be set, and its preparation process is very complicated.
As the preparation method of Chinese patent literature CN101691909A in disclosed LED package module on the 7th April in 2010, this LED package module comprises substrate, and substrate has wiring side, and wiring side comprises circuit pack; This method comprises the circuit pack production process, it is characterized in that, described circuit pack production process may further comprise the steps: (1) silk-screen heat conductive insulating glue-line, (2) oven dry, (3) pasting protective film, (4) the vacuum plating end, (5) nanometer electro-deposition Cu, wherein, (1) the step thickness of described heat conductive insulating glue-line is 0.02mm-0.06mm, the material of described heat conductive insulating glue-line is the mixture of epoxy resin and α-Al2O3, or the mixture of polyimides and α-Al2O3; (2) described oven dry of step is a hot-air seasoning, and when the material of described heat conductive insulating glue-line adopted the mixture of epoxy resin and α-Al2O3, the temperature that this baking step adopts was 180 ℃-200 ℃; When the material of described heat conductive insulating glue-line adopted the mixture of polyimides and α-Al2O3, the temperature that this baking step adopts was 180 ℃-400 ℃; (3) goes on foot described diaphragm, is that the PVC film adds rubber bound, or the PET film adds silica gel bonding, or the PP film adds the acrylic glue bond; Described diaphragm can be retained on the semi-finished product, as protective coating usefulness, when protected position need be provided with other material, removes protective layer again and gets final product; (4) step, described vacuum was plated the end, was the Ni that deposits 5nm-10nm with vacuum sputtering or vacuum evaporation mode; Described nanometer electro-deposition Cu of (5) step is the Cu that deposits 0.002mm-0.018mm with vacuum sputtering or vacuum evaporation gold mode.
Complicated technological process causes the cost of LED package module high, and prolongs and to the terminal light fixture, the popularization of LED illumination is restricted.
Summary of the invention
The objective of the invention is to overcome above-mentioned the deficiencies in the prior art part and provide a kind of process succinct LED package module preparation method.
Purpose of the present invention can be achieved through the following technical solutions:
A kind of LED package module preparation method is characterized in that may further comprise the steps: S10, electrode slice is provided, and injection moulding processing glue shell is located in the glue shell with electrode slice; S20 provides the copper post, and the copper post is pressed into the glue shell; S30 provides led chip, and is solid brilliant at copper capital face; S40, the weldering gold thread connects chip and electrode; Wherein, expose from the lower surface of glue shell described copper post lower surface, and led chip exposes from the upper surface of glue shell, and folder is established electrode in the glue shell, and electrode also exposes from the upper surface of glue shell.
LED package module preparation method is characterized in that: described copper post has step, and described step is defined as big end and small end with the copper post, the small end of led chip setting and copper post.
LED package module preparation method, it is characterized in that: have the column counterbore above the described glue shell, counterbore has the bottom of level, and described led chip and electrode expose from glue shell upper surface and be meant that led chip and electrode expose from the bottom of counterbore, accordingly, described gold thread also is arranged at the counterbore bottom.
LED package module preparation method is characterized in that further comprising the steps of: S50, the light cup is provided, and the light cup is arranged at the glue shell; Wherein light cup bottom has and the corresponding column convex of described counterbore, and the column convex is connected in the glue shell with interference fit; The bottom surface of column convex also has the pit that is used for ccontaining gold thread, and the position of pit is corresponding with the position of gold thread.
LED package module preparation method is characterized in that further comprising the steps of: S49, establish reflective membrane in the reflective surface plating of described light cup.
LED package module preparation method is characterized in that further comprising the steps of: S41 is coated with the fluorescent material step, at mode the fluorescent material that be coated with no shadow glue be solvent of led chip exiting surface by spraying; S55, sealing; Sealing in reflector.
LED package module preparation method is characterized in that further comprising the steps of: S50a, lens are provided, and lens are arranged at the glue shell; Wherein the lens bottom has and the corresponding column convex of described counterbore, and the column convex is connected in the glue shell with interference fit; Also define a confined space between the bottom surface of column convex and the bottom surface of described counterbore.
LED package module preparation method is characterized in that further comprising the steps of: S41a is coated with the fluorescent material step, at mode the fluorescent material that be coated with no shadow glue be solvent of led chip exiting surface by spraying; S45a, sealing, it is preceding in described counterbore bottom sealing that lens are installed, and sealing region is the zone of described confined space.
LED package module preparation method is characterized in that: described electrode only connects the position of gold thread and exposes from described glue shell upper surface; Described electrode level is located in the glue shell.
A kind of substantially as context and the expressed LED package module preparation method of accompanying drawing.
LED package module preparation method of the present invention except that necessary solid crystalline substance and weldering gold thread technology, has adopted the simplest assembling mode, and compared with prior art, it is low to implement cost.
Description of drawings
Fig. 1 is the LED package module schematic diagram of first embodiment of the invention preparation.
Fig. 2 is the first embodiment of the invention flow chart.
Fig. 3 is the LED package module schematic diagram of second embodiment of the invention preparation.
Fig. 4 is the second embodiment of the invention flow chart.
Embodiment
The invention will be further described below in conjunction with accompanying drawing.
With reference to figure 1, it is the LED package module of first embodiment of the invention preparation, comprise led chip 103, also comprise copper post 101, copper post 101 is arranged in glue shell 104, led chip 103 is arranged at the end of copper post 101 upper surfaces, expose from the lower surface of glue shell 104 copper post 101 lower surfaces, led chip 103 exposes from the upper surface of glue shell 104, folder is established electrode 105 in the glue shell 104, also expose from the upper surface of glue shell 104 the inner of electrode 105, is connected by gold thread 106 between led chip 103 and electrode 105 the inners; The front of described glue shell 104 is provided with light cup 108.In the present embodiment, described copper post 101 has step, and step is defined as big end and small end with copper post 101, and led chip 103 is arranged at the small end of copper post 101 by Au/Sn eutectic layer 102.In the present embodiment, led chip 106 exiting surfaces are the mode fluorescent material that to be coated with no shadow glue be solvent by spraying also.In the present embodiment, have the column counterbore above the described glue shell 104, counterbore has the bottom of level, and described led chip 103 and electrode 105 the inners are exposed from glue shell 104 upper surfaces and are meant that led chip 103 and electrode 105 the inners expose from the bottom of counterbore.The bottom surface of described accordingly light cup 108 has the column convex, and the column convex is arranged at described counterbore.In the present embodiment, the bottom surface of described column convex has the pit 1081 that is used for ccontaining gold thread, and the position of pit 1081 is corresponding with the position of gold thread 106.In the present embodiment, the position that described electrode 105 only connects gold thread 106 is that expose from described glue shell 104 upper surfaces electrode the inner.In the present embodiment, described electrode 105 levels are located in the glue shell 104.Reflective membrane is established in the plating of the reflective surface of the reflector 108 of present embodiment, and reflective membrane is for aluminizing or silver-plated.
With reference to figure 2, first embodiment of the invention is a kind of LED package module preparation method, it is characterized in that may further comprise the steps: S10, electrode slice is provided, and injection moulding processing glue shell is located in the glue shell with electrode slice; S20 provides the copper post, and the copper post is pressed into the glue shell; S30 provides led chip, and is solid brilliant at copper capital face; S40, the weldering gold thread connects chip and electrode; Wherein, expose from the lower surface of glue shell described copper post lower surface, and led chip exposes from the upper surface of glue shell, and folder is established electrode in the glue shell, and electrode also exposes from the upper surface of glue shell.S50 provides the light cup, and the light cup is arranged at the glue shell; S49 establishes reflective membrane in the reflective surface plating of described light cup; S41 is coated with the fluorescent material step, at mode the fluorescent material that be coated with no shadow glue be solvent of led chip exiting surface by spraying; S55, sealing; Sealing in reflector.
With reference to figure 3, it is the LED package module of second embodiment of the invention preparation, comprise led chip 103, also comprise copper post 101, copper post 101 is arranged in glue shell 104, led chip 103 is arranged at the end of copper post 101 upper surfaces, expose from the lower surface of glue shell 104 copper post 101 lower surfaces, led chip 103 exposes from the upper surface of glue shell 104, folder is established electrode 105 in the glue shell 104, also expose from the upper surface of glue shell 104 the inner of electrode 105, is connected by gold thread 106 between led chip 103 and electrode 105 the inners; The front of described glue shell 104 is provided with lens 109.In the present embodiment, described copper post 101 has step, and step is defined as big end and small end with copper post 101, and led chip 103 is arranged at the small end of copper post 101 by Au/Sn eutectic layer 102.In the present embodiment, led chip 106 exiting surfaces are the mode fluorescent material that to be coated with no shadow glue be solvent by spraying also.In the present embodiment, have the column counterbore above the described glue shell 104, counterbore has the bottom of level, and described led chip 103 and electrode 105 the inners are exposed from glue shell 104 upper surfaces and are meant that led chip 103 and electrode 105 the inners expose from the bottom of counterbore.The bottom surface of described accordingly lens 108 has the column convex, and the column convex is arranged at described counterbore; The column convex of described lens 108 and the counterbore of described glue shell 104 constitute in the mode of interference fit fixedlys connected.In the present embodiment, the position that described electrode 105 only connects gold thread 106 is that expose from described glue shell 104 upper surfaces electrode the inner.In the present embodiment, described electrode 105 levels are located in the glue shell 104.
With reference to figure 4, four embodiment of the invention is a kind of LED package module preparation method, it is characterized in that may further comprise the steps: S10, electrode slice is provided, and injection moulding processing glue shell is located in the glue shell with electrode slice; S20 provides the copper post, and the copper post is pressed into the glue shell; S30 provides led chip, and is solid brilliant at copper capital face; S40, the weldering gold thread connects chip and electrode; Wherein, expose from the lower surface of glue shell described copper post lower surface, and led chip exposes from the upper surface of glue shell, and folder is established electrode in the glue shell, and electrode also exposes from the upper surface of glue shell.Further comprising the steps of: S50a, lens are provided, lens are arranged at the glue shell; Further comprising the steps of: S41a is coated with the fluorescent material step, at mode the fluorescent material that be coated with no shadow glue be solvent of led chip exiting surface by spraying; S45a, sealing, it is preceding in described counterbore bottom sealing that lens are installed, and sealing region is the zone of described confined space.
Claims (10)
1. LED package module preparation method is characterized in that may further comprise the steps:
S10 provides electrode slice, and injection moulding processing glue shell is located in the glue shell with electrode slice;
S20 provides the copper post, and the copper post is pressed into the glue shell;
S30 provides led chip, and is solid brilliant at copper capital face;
S40, the weldering gold thread connects chip and electrode;
Wherein, expose from the lower surface of glue shell described copper post lower surface, and led chip exposes from the upper surface of glue shell, and folder is established electrode in the glue shell, and electrode also exposes from the upper surface of glue shell.
2. LED package module preparation method according to claim 1 is characterized in that: described copper post has step, and described step is defined as big end and small end with the copper post, the small end of led chip setting and copper post.
3. LED package module preparation method according to claim 1, it is characterized in that: have the column counterbore above the described glue shell, counterbore has the bottom of level, described led chip and electrode expose from glue shell upper surface and are meant that led chip and electrode expose from the bottom of counterbore, accordingly, described gold thread also is arranged at the counterbore bottom.
4. LED package module preparation method according to claim 3 is characterized in that further comprising the steps of: S50, the light cup is provided, and the light cup is arranged at the glue shell; Wherein light cup bottom has and the corresponding column convex of described counterbore, and the column convex is connected in the glue shell with interference fit; The bottom surface of column convex also has the pit that is used for ccontaining gold thread, and the position of pit is corresponding with the position of gold thread.
5. LED package module preparation method according to claim 4 is characterized in that further comprising the steps of: S49, establish reflective membrane in the reflective surface plating of described light cup.
6. according to claim 4 or 5 described LED package module preparation methods, it is characterized in that further comprising the steps of:
S41 is coated with the fluorescent material step, at mode the fluorescent material that be coated with no shadow glue be solvent of led chip exiting surface by spraying;
S55, sealing; Sealing in reflector.
7. LED package module preparation method according to claim 3 is characterized in that further comprising the steps of: S50a, lens are provided, and lens are arranged at the glue shell; Wherein the lens bottom has and the corresponding column convex of described counterbore, and the column convex is connected in the glue shell with interference fit; Also define a confined space between the bottom surface of column convex and the bottom surface of described counterbore.
8. LED package module preparation method according to claim 7 is characterized in that further comprising the steps of:
S41a is coated with the fluorescent material step, at mode the fluorescent material that be coated with no shadow glue be solvent of led chip exiting surface by spraying;
S45a, sealing, it is preceding in described counterbore bottom sealing that lens are installed, and sealing region is the zone of described confined space.
9. LED package module preparation method according to claim 1 is characterized in that: described electrode only connects the position of gold thread and exposes from described glue shell upper surface; Described electrode level is located in the glue shell.
10. one kind substantially as context and the expressed LED package module preparation method of accompanying drawing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010618859 CN102163655A (en) | 2010-12-31 | 2010-12-31 | Preparation method of LED (light-emitting diode) packaging module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010618859 CN102163655A (en) | 2010-12-31 | 2010-12-31 | Preparation method of LED (light-emitting diode) packaging module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102163655A true CN102163655A (en) | 2011-08-24 |
Family
ID=44464766
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010618859 Pending CN102163655A (en) | 2010-12-31 | 2010-12-31 | Preparation method of LED (light-emitting diode) packaging module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102163655A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102751425A (en) * | 2012-05-30 | 2012-10-24 | 日月光半导体制造股份有限公司 | Light-emitting diode packaging structure and bearing piece thereof |
| CN103341431A (en) * | 2013-06-24 | 2013-10-09 | 苏州东山精密制造股份有限公司 | Spraying device for LED (Light Emitting Diode) |
| CN105514249A (en) * | 2012-03-16 | 2016-04-20 | 日月光半导体制造股份有限公司 | LED package and carrying board |
| CN105655471A (en) * | 2012-05-30 | 2016-06-08 | 日月光半导体制造股份有限公司 | Light emitting diode packaging structure and bearing part thereof |
| CN105845807A (en) * | 2012-05-07 | 2016-08-10 | 日月光半导体制造股份有限公司 | Flip chip package structure of light-emitting diode |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN200969356Y (en) * | 2006-10-09 | 2007-10-31 | 华宏光电子(深圳)有限公司 | High power light-emitting diode |
| US20070263389A1 (en) * | 2006-03-17 | 2007-11-15 | Elit Fine Ceramics Co., Ltd. | LED reflector molding process, construction, and loader thereof |
| CN101404316A (en) * | 2008-10-30 | 2009-04-08 | 深圳雷曼光电科技有限公司 | LED and its packaging method |
| CN201536111U (en) * | 2009-07-03 | 2010-07-28 | 福建中科万邦光电股份有限公司 | Packaging structure of high-performance high-power LED |
| CN101807658A (en) * | 2010-03-25 | 2010-08-18 | 福建中科万邦光电股份有限公司 | High power LED encapsulating method |
-
2010
- 2010-12-31 CN CN 201010618859 patent/CN102163655A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070263389A1 (en) * | 2006-03-17 | 2007-11-15 | Elit Fine Ceramics Co., Ltd. | LED reflector molding process, construction, and loader thereof |
| CN200969356Y (en) * | 2006-10-09 | 2007-10-31 | 华宏光电子(深圳)有限公司 | High power light-emitting diode |
| CN101404316A (en) * | 2008-10-30 | 2009-04-08 | 深圳雷曼光电科技有限公司 | LED and its packaging method |
| CN201536111U (en) * | 2009-07-03 | 2010-07-28 | 福建中科万邦光电股份有限公司 | Packaging structure of high-performance high-power LED |
| CN101807658A (en) * | 2010-03-25 | 2010-08-18 | 福建中科万邦光电股份有限公司 | High power LED encapsulating method |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105514249A (en) * | 2012-03-16 | 2016-04-20 | 日月光半导体制造股份有限公司 | LED package and carrying board |
| CN105514249B (en) * | 2012-03-16 | 2018-06-12 | 日月光半导体制造股份有限公司 | LED package and loading plate |
| CN105845807A (en) * | 2012-05-07 | 2016-08-10 | 日月光半导体制造股份有限公司 | Flip chip package structure of light-emitting diode |
| CN102751425A (en) * | 2012-05-30 | 2012-10-24 | 日月光半导体制造股份有限公司 | Light-emitting diode packaging structure and bearing piece thereof |
| CN102751425B (en) * | 2012-05-30 | 2016-05-04 | 日月光半导体制造股份有限公司 | Encapsulation structure of LED and bearing part thereof |
| CN105655471A (en) * | 2012-05-30 | 2016-06-08 | 日月光半导体制造股份有限公司 | Light emitting diode packaging structure and bearing part thereof |
| CN105655471B (en) * | 2012-05-30 | 2019-01-18 | 日月光半导体制造股份有限公司 | Encapsulation structure of LED and its load-bearing part |
| CN103341431A (en) * | 2013-06-24 | 2013-10-09 | 苏州东山精密制造股份有限公司 | Spraying device for LED (Light Emitting Diode) |
| CN103341431B (en) * | 2013-06-24 | 2016-03-02 | 苏州东山精密制造股份有限公司 | LED spray equipment |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102272924B (en) | Radiation substrate for power LED and power LED product and manufacturing method thereof | |
| US9136231B2 (en) | Carrier-free land grid array IC chip package and preparation method thereof | |
| CN102163655A (en) | Preparation method of LED (light-emitting diode) packaging module | |
| US8421174B2 (en) | Light emitting diode package structure | |
| JP4914998B1 (en) | LED module device and manufacturing method thereof | |
| CN102916112A (en) | Large power LED and manufacturing method thereof | |
| CN102760816A (en) | LED (light emitting diode) packaging structure and manufacturing method thereof | |
| JP2020504437A (en) | Integrated RGB-LED display | |
| CN102881779A (en) | Method for manufacturing light emitting diode packaging structure | |
| CN104952864A (en) | LED (light emitting diode) lamp filament and manufacturing method thereof | |
| CN2935478Y (en) | Support structure of LED equipped with transparent surface | |
| US9147813B2 (en) | High thermal conductivity and low degradation die attach with dual adhesive | |
| CN102237481A (en) | Surface mounted type power light-emitting diode (LED) bracket manufacturing method and product manufactured thereby | |
| CN102163656A (en) | Method for preparing light emitting diode (LED) packaging module | |
| CN201853742U (en) | Surface pasting type power light emitting diode (LED) support frame structure | |
| EP2432038A1 (en) | Light emitting diode package structure | |
| CN102779919B (en) | Semiconductor encapsulation structure | |
| CN105489741A (en) | Compression moulding packaging technology for LED flip-chip | |
| CN102163601A (en) | LED (light emitting diode) packaging module | |
| CN202905709U (en) | COB LED module | |
| CN102903709A (en) | COB (Chip on Board) LED module and manufacturing method thereof | |
| CN206340574U (en) | A kind of QFN surface-adhered types RGB LED package supports | |
| CN104465955A (en) | LED lamp belt and manufacturing method thereof | |
| CN215988830U (en) | High-temperature-resistant light-emitting diode | |
| CN103337578A (en) | Method and structure of upright-installed dual-electrode chip inverted pasting application |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20110824 |