CN102161942A - Cleaning solution composition for deposition material and cleaning method using the same - Google Patents
Cleaning solution composition for deposition material and cleaning method using the same Download PDFInfo
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- CN102161942A CN102161942A CN2011100418019A CN201110041801A CN102161942A CN 102161942 A CN102161942 A CN 102161942A CN 2011100418019 A CN2011100418019 A CN 2011100418019A CN 201110041801 A CN201110041801 A CN 201110041801A CN 102161942 A CN102161942 A CN 102161942A
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- 239000000463 material Substances 0.000 title claims abstract description 89
- 230000008021 deposition Effects 0.000 title claims abstract description 87
- 239000000203 mixture Substances 0.000 title claims abstract description 62
- 238000004140 cleaning Methods 0.000 title claims abstract description 47
- 238000000034 method Methods 0.000 title claims abstract description 32
- 238000000151 deposition Methods 0.000 claims abstract description 94
- 238000004519 manufacturing process Methods 0.000 claims abstract description 48
- 239000007788 liquid Substances 0.000 claims description 43
- 238000005406 washing Methods 0.000 claims description 37
- 238000009434 installation Methods 0.000 claims description 36
- 230000005693 optoelectronics Effects 0.000 claims description 30
- CFQPVBJOKYSPKG-UHFFFAOYSA-N 1,3-dimethylimidazol-2-one Chemical compound CN1C=CN(C)C1=O CFQPVBJOKYSPKG-UHFFFAOYSA-N 0.000 claims description 6
- 238000011282 treatment Methods 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 abstract description 17
- 230000008569 process Effects 0.000 abstract description 10
- LUFDAKURDWGYRK-UHFFFAOYSA-N 1,3-dimethylimidazolidin-2-one Chemical compound CN1CCN(C)C1=O.CN1CCN(C)C1=O LUFDAKURDWGYRK-UHFFFAOYSA-N 0.000 abstract 1
- -1 arylamines compounds Chemical class 0.000 description 20
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 14
- 238000012360 testing method Methods 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 12
- 229920000265 Polyparaphenylene Polymers 0.000 description 10
- 239000004305 biphenyl Substances 0.000 description 10
- 238000001000 micrograph Methods 0.000 description 8
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 5
- 238000009835 boiling Methods 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- OEPODCGUSPAXON-UHFFFAOYSA-N CN1C(N(CC1)C)=O.CN1C(N(C=C1)C)=O Chemical compound CN1C(N(CC1)C)=O.CN1C(N(C=C1)C)=O OEPODCGUSPAXON-UHFFFAOYSA-N 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- UJOBWOGCFQCDNV-UHFFFAOYSA-N Carbazole Natural products C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229920006389 polyphenyl polymer Chemical class 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 description 1
- WVDDGKGOMKODPV-UHFFFAOYSA-N Benzyl alcohol Chemical compound OCC1=CC=CC=C1 WVDDGKGOMKODPV-UHFFFAOYSA-N 0.000 description 1
- VCUFZILGIRCDQQ-KRWDZBQOSA-N N-[[(5S)-2-oxo-3-(2-oxo-3H-1,3-benzoxazol-6-yl)-1,3-oxazolidin-5-yl]methyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C1O[C@H](CN1C1=CC2=C(NC(O2)=O)C=C1)CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F VCUFZILGIRCDQQ-KRWDZBQOSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 235000019445 benzyl alcohol Nutrition 0.000 description 1
- 229960004217 benzyl alcohol Drugs 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 239000003651 drinking water Substances 0.000 description 1
- 235000020188 drinking water Nutrition 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- AZHSSKPUVBVXLK-UHFFFAOYSA-N ethane-1,1-diol Chemical compound CC(O)O AZHSSKPUVBVXLK-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229960004592 isopropanol Drugs 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- XLSZMDLNRCVEIJ-UHFFFAOYSA-N methylimidazole Natural products CC1=CNC=N1 XLSZMDLNRCVEIJ-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- YNOGYQAEJGADFJ-UHFFFAOYSA-N oxolan-2-ylmethanamine Chemical compound NCC1CCCO1 YNOGYQAEJGADFJ-UHFFFAOYSA-N 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- BSYVTEYKTMYBMK-UHFFFAOYSA-N tetrahydrofurfuryl alcohol Chemical compound OCC1CCCO1 BSYVTEYKTMYBMK-UHFFFAOYSA-N 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 239000002351 wastewater Substances 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D11/00—Special methods for preparing compositions containing mixtures of detergents
- C11D11/0094—Process for making liquid detergent compositions, e.g. slurries, pastes or gels
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Detergent Compositions (AREA)
Abstract
The present invention relates to a cleaning solution composition for deposition material comprising N-methyl-2-pyrrolidone and 1, 3-Dimethyl-2-imidazolidinone (1, 3-Dimethyl-2-imidazolidone) and a cleaning method using the same. When the composition is used, the deposition material attached to the manufacturing apparatus of the photovoltaic device can be rapidly removed, so that the manufacturing process time can be shortened, the production cost can be reduced, and the process safety can be ensured.
Description
Technical field
The present invention relates to the deposition material cleaning liquid composition and utilize the washing methods of said composition.Specifically, relate to by rapid removal, can shorten manufacturing process time, reduce productive expense, and can guarantee the deposition material cleaning liquid composition of process safety and utilize the washing methods of said composition attached to the deposition material on the optoelectronic device manufacturing installation.
Background technology
Organic Light Emitting Diode (OLED, Organic Light Emitting Diodes) is that a kind of utilization combines in organism from negative electrode and anode injected electrons and hole respectively and the indicating meter of luminous luminous phenomenon.When the anode injected hole, when negative electrode injects electronics, hole and the neutral exciton (Exciton) of generation high energy mutually compound with electronics, and this exciton produces light when shifting than low-lying level.OLED can low voltage drive, and shows shades of colour according to different luminophores, and can be developed as have wide visual angle, response speed is fast and the lightweight element of wide area, therefore receive much concern as follow-on display unit.
Be formed with the middle layer that comprises luminescent layer at least between the opposed facing electrode of general organic electroluminescent device.This middle layer is the organic film of being made up of organism, is made of hole injection layer, hole transporting layer, luminescent layer, electron supplying layer and electron injecting layer etc.
For described organic film, behind the installation base plate, heating at high temperature fills the heating container of deposition material, by distillation deposition material is attached to described substrate and forms in vacuum chamber.Use mask in order on described organic film, to form specific pattern, form in desire on the object of organic film, the mask that is formed with the predetermined pattern peristome is installed, to deposit, thereby only on the position of exposing, deposit organic membrane, deposit required pattern with this by described peristome.In the described deposition process, can pile up unnecessary deposition material around the described peristome and hinder the accuracy of depositing operation, for the characteristic that improves follow-up organic membrane depositing operation and the reliability of integrated artistic, mask should keep not having the residual state of any foreign matter.
In view of the above, in order to remove deposition material unnecessary on the mask, and various washingss and washing device have been proposed.In Korea S's publication 2007-0065646 number, as washings Virahol (Isopropylalcohol) is disclosed; In No. the 0726049th, Korea S's publication 2009-0036435 number and the Korean granted patent, as washings the N-N-methyl-2-2-pyrrolidone N-is disclosed.But, Virahol has lower boiling and is volatile, need excessive use, and removed deposition material may adhere again on the substrate, and be operating environment detection material, management object objectionable impurities and the exposure benchmark setting substance of defined in the industry safe healthcare method, harmful to user's health and environment.And the N-N-methyl-2-2-pyrrolidone N-need take long to and could dissolve deposition material and reduce engineering efficient.Therefore, need develop and to remove deposition material at short notice and shorten the process time and reduce productive expense, and can guarantee the washing composition of process safety.
Summary of the invention
The object of the present invention is to provide a kind of by removing rapidly attached to the deposition material on the optoelectronic device manufacturing installation, can shorten manufacturing process time, reduce productive expense, and can guarantee the deposition material cleaning liquid composition of process safety and utilize the washing methods of said composition.
Deposition material cleaning liquid composition provided by the invention comprises: N-N-methyl-2-2-pyrrolidone N-(N-Methyl-2-pyrrolidone); And 1,3-dimethyl-2-imidazolone (1,3-Dimethyl-2-imidazolidinone).
And washing methods provided by the invention comprises the steps: to utilize described deposition material cleaning liquid composition, removes attached to the deposition material on the optoelectronic device manufacturing installation.
Below, describe in detail according to the deposition material cleaning liquid composition of the specific embodiment of the invention and utilize the washing methods of said composition.
Deposition material cleaning liquid composition according to one embodiment of the invention provided comprises: N-N-methyl-2-2-pyrrolidone N-(N-Methyl-2-pyrrolidone); And 1,3-dimethyl-2-imidazolone (1,3-Dimethyl-2-imidazolidinone).
The N-N-methyl-2-2-pyrrolidone N-is to employed deposition material in the manufacturing processed of optoelectronic device, especially to be included in the deposition material macromolecule organic matter (for example, arylamines compounds, carbazole compound, polyphenylene ethylene vinyl compound, polyphenyl compounds etc.) solubleness undesirable, therefore elongated or in washing process, append the use ultrasonic wave in order to remove unnecessary deposition part, need make the time that is trapped in the washing soln.
The present inventor confirms by experiment, comprise described N-N-methyl-2-2-pyrrolidone N-(N-Methyl-2-pyrrolidone) and 1 simultaneously if use, 3-dimethyl-2-imidazolone (1, washings 3-Dimethyl-2-imidazolidinone), then can remove the relatively little deposition material of solubleness rapidly, finish the present invention whereby.
Described N-N-methyl-2-2-pyrrolidone N-(N-Methyl-2-pyrrolidone) can be represented to have 202～204 ℃ boiling point and the moment of dipole about 4.09D (dipole moment) by following Chemical formula 1.
[Chemical formula 1]
Described 1, and 3-dimethyl-2-imidazolone (1,3-Dimethyl-2-imidazolidinone) can represent to have boiling point and the moment of dipole about 4.05D (dipole moment) about 225 ℃ by following Chemical formula 2.
[Chemical formula 2]
Described N-N-methyl-2-2-pyrrolidone N-and 1,3-dimethyl-2-imidazolone has mutually similarly molecular structure and moment of dipole, therefore can mix easily, and because the both has high boiling point, even therefore under admixture, composition due to the volatilization changes also very little, thereby can guarantee process safety.
And, described N-N-methyl-2-2-pyrrolidone N-and 1,3-dimethyl-2-imidazolone has high moment of dipole respectively, therefore the cleaning liquid composition that comprises these materials especially can show higher solubleness and outstanding washing/removal ability to not diffluent macromolecular material for deposition material.And then, described deposition material cleaning liquid composition can dissolve arylamines compounds, carbazole compound, polyphenylene ethylene vinyl compound, the contour molecular organic material of polyphenyl compounds easily, be CBP (4,4-N, N dicarbazole-biphenyl), the derivative of poly(p-phenylene) (Poly (p-phenylene)), Poly (p-phenylenvinylene) or these materials etc., thereby can wash at short notice and remove.
Just, these effects are to mix specific compound, it is described N-N-methyl-2-2-pyrrolidone N-and 1, just can show during 3-dimethyl-2-imidazolone, as described later shown in the experimental example, be not the compound (for example, DMSO or DMAc etc.) that merely mixing has high moment of dipole, all can show aforesaid effect.
In view of the above, if use described cleaning liquid composition, then to need not to take to wash by rubbing with the hands physical treatments such as (rubbing) attached to the unnecessary deposition material on the optoelectronic device manufacturing installation, also can remove rapidly and easily, in the process of the accompanying unnecessary deposition material of washing, the phenomenon that can take place to adhere to once more not, thus need not often to change washings or excessive use washings.Deposition material cleaning liquid composition according to an embodiment of the invention, can remove unnecessary deposition material rapidly attached to the optoelectronic device manufacturing installation, therefore required manufacturing process time in the time of can shortening optoelectronic devices such as making Organic Light Emitting Diode, and can reduce productive expense.
And, described N-N-methyl-2-2-pyrrolidone N-and 1,3-dimethyl-2-imidazolone has very high affinity to glassware for drinking water, therefore as long as use described deposition material cleaning liquid composition, after even washing step finishes, the washings of residual minim on the optoelectronic device manufacturing installation also need not to append with an organic solvent and only and can thoroughly remove residual washings by water.Moreover, described two kinds of compositions are lower to the corrodibility of metal level, therefore can damage the optoelectronic device manufacturing installation hardly.
In addition, described deposition material cleaning liquid composition preferably comprises: the N-N-methyl-2-2-pyrrolidone N-(N-Methyl-2-pyrrolidone) of 5～80 weight %; And 20～95 weight % 1,3-dimethyl-2-imidazolone (1,3-Dimethyl-2-imidazolidinone).
If described N-N-methyl-2-2-pyrrolidone N-is lower than 5 weight %, then the solvency power to deposition material has little effect, and needs to use excessive 1,3-dimethyl-2-imidazolone, so economical inadequately, if it is surpass 80 weight %, then elongated and make that the integrated artistic time is elongated to the removal time of deposition material.
And, if described 1,3-dimethyl-2-imidazolone is lower than 20 weight %, then elongated and make the process time elongated to the removal time of deposition material, if surpass 95 weight %, then the dissolving power of deposition material is descended and the raising degree of washability is very little, and unnecessary excessive use also causes economical inadequately.
Described deposition material cleaning liquid composition can be used for removing the deposition material attached on the optoelectronic device manufacturing installation.And described optoelectronic device manufacturing installation can include the manufacturing installation of OLED.
Especially, the manufacturing installation of described Organic Light Emitting Diode can comprise anti-pasting board or the deposition mas that is used for depositing treatment.In the manufacturing processed of Organic Light Emitting Diode,, can use under vacuum state the sedimentation that the deposition material heating is attached on the substrate in order to form at least 1 organic film.In this sedimentation, because the depositing treatment process carries out repeatedly repeatedly, therefore as can the accumulative deposit material on the surface of the anti-pasting board of Organic Light Emitting Diode manufacturing installation or deposition mas.If with accumulation have the anti-pasting board of deposition material or deposition mas place no matter, then may the pollution deposit chamber, and because the weight of accumulative deposit material, deposition mas can be crooked, thereby can reduce the technology reliabilitys such as tolerance range that pattern forms.And described deposition material cleaning liquid composition can be removed the unnecessary deposition material that adheres to rapidly, thereby can improve the reliability of technology, and reduces the manufacturing process time and the expense of Organic Light Emitting Diode.
In addition, the washing methods that is provided comprises the steps: to utilize described deposition material cleaning liquid composition according to another embodiment of the present invention, removes attached to the deposition material on the optoelectronic device manufacturing installation.
As mentioned above, comprise described N-N-methyl-2-2-pyrrolidone N-(N-Methyl-2-pyrrolidone) and 1 simultaneously if use, 3-dimethyl-2-imidazolone (1, washings 3-Dimethyl-2-imidazolidinone), even then the deposition material that solubleness is low relatively also can be removed rapidly, therefore can shorten required manufacturing process time and the reduction productive expenses of optoelectronic device such as being used to make Organic Light Emitting Diode.
Described deposition material cleaning liquid composition preferably comprises: the N-N-methyl-2-2-pyrrolidone N-(N-Methyl-2-pyrrolidone) of 5～80 weight %; And 20～95 weight % 1,3-dimethyl-2-imidazolone (1,3-Dimethyl-2-imidazolidinone).
Removal can preferably be carried out under 25～35 ℃ temperature at 20～70 ℃ attached to the step of the deposition material on the described optoelectronic device manufacturing installation.Therefore in described temperature range, the distortion of the manufacturing installation due to can preventing to heat can improve the tolerance range and the reliability of optoelectronic device manufacturing processed.
And, in order to remove deposition material more rapidly, be attached in the step of the deposition material on the described optoelectronic device manufacturing installation in removal, can append the use ultrasonic wave.
And described washing methods can also comprise the steps: to wash with water the removed optoelectronic device manufacturing installation of described deposition material; And dry described optoelectronic device manufacturing installation.On the removed optoelectronic device manufacturing installation of described deposition material, described deposition material washings may residually be arranged, can utilize water to remove described washings this moment.And, in order to remove described water, can append the step of carrying out baking step or using ethanol alcohol (alcohol) such as (ethanol).
The optoelectronic device manufacturing installation that is suitable for described washing methods can be the manufacturing installation of Organic Light Emitting Diode, can exemplify in the manufacturing installation of Organic Light Emitting Diode particularly, is used for the anti-pasting board of depositing treatment or deposition mas etc.
For described washing methods, except that described content, there are not method or equipment and device that other restrictedly can append the routine that is used for washing the optoelectronic device manufacturing installation.
According to the present invention, can provide and to remove rapidly attached to the deposition material on the optoelectronic device manufacturing installation, thereby the shortening manufacturing process time reduces productive expense, can guarantee the deposition material composition of process safety owing to have high boiling point and utilize the washing methods of said composition.
Description of drawings
Fig. 1 is for to being formed with 4 in the experimental example 2,4-N, the mask test piece of N dicarbazole-biphenyl, handle with the cleaning liquid composition of embodiment 4 front/rear, observed 2500 times of electron scanning micrographs;
Fig. 2 is for to being formed with the mask test piece of Poly (p-phenylene) in the experimental example 2, and is front/rear with the cleaning liquid composition processing of embodiment 4, observed 2500 times of electron scanning micrographs;
Fig. 3 is for to being formed with 4 in the experimental example 2,4-N, and the mask test piece of N dicarbazole-biphenyl, after handling with the cleaning liquid composition of embodiment 5, observed 2500 times of electron scanning micrographs;
Fig. 4 is for to being formed with the mask test piece of Poly (p-phenylene) in the experimental example 2, after handling with the cleaning liquid composition of embodiment 5, and observed 2500 times of electron scanning micrographs;
Fig. 5 is for to being formed with 4 in the experimental example 2,4-N, and the mask test piece of N dicarbazole-biphenyl, after handling with the cleaning liquid composition of comparative example 1, observed 2500 times of electron scanning micrographs;
Fig. 6 is for to being formed with the mask test piece of Poly (p-phenylene) in the experimental example 2, after handling with the cleaning liquid composition of comparative example 1, and observed 2500 times of electron scanning micrographs;
Fig. 7 is for to being formed with 4 in the experimental example 2,4-N, and the mask test piece of N dicarbazole-biphenyl, after handling with the cleaning liquid composition of comparative example 7, observed 2500 times of electron scanning micrographs;
Fig. 8 is for to being formed with the mask test piece of Poly (p-phenylene) in the experimental example 2, after handling with the cleaning liquid composition of comparative example 7, and observed 2500 times of electron scanning micrographs.
Embodiment
Describe the present invention in the following embodiments more in detail.But following embodiment is of the present invention exemplifying, and content of the present invention is not limited to these embodiment.
＜embodiment and comparative example: the preparation of deposition material cleaning liquid composition 〉
1, embodiment 1 to 8
Will be with the N-Methyl-2-pyrrolidone (NMP) and 1 that forms as following table 1,3-Dimethyl-2-imidazolidinone (DMI) mixed at normal temperatures 10 minutes and prepares the deposition material cleaning liquid composition.
The composition of [table 1] embodiment 1 to 8
2, comparative example 1 to 10
To mixing at normal temperatures 10 minutes and prepare the deposition material cleaning liquid composition with each composition as the composition of following table 2.
The composition of [table 2] comparative example 1 to 10
※ NMP:N-methyl-2-pyrrolidone
DMI: methylimidazole alkane ketone
DMSO: dimethyl sulfoxide (DMSO)
THFA: tetrahydrofurfuryl amine
CA: carbitol acetate
BDG: diethylene glycol monobutyl ether
DMDG: diethylene glycol dimethyl ether
IPA: Virahol
BA: phenylcarbinol
DMAc: N,N-DIMETHYLACETAMIDE
＜experimental example: solubility property evaluation 〉
The deposition material cleaning liquid composition of making among described embodiment 1-8 and the comparative example 1-10 has been carried out the solubility property evaluation.
Experimental example 1:TS (Total Solid) detects test
With organic deposit material 4,4-N, N dicarbazole-biphenyl 1g and Poly (p-phenylene) 1g puts into the cleaning liquid composition 19g of embodiment 1 to 8 and comparative example 1 to 10 respectively, after placing 1 hour under 25 ℃, filters each cleaning liquid composition.Solution 5g after filtering is put into paper tinsel dish (foil dish) lining respectively, and this paper tinsel dish placed on 240 ℃ the hot-plate (Hot-plate), till the solution of oven dry always after filter is non-volatile.
Then, detect the weight of the paper tinsel dish of being dried fully, by detecting the amount (weight %) that is filtered the deposition material in the solution that is dissolved in as shown in the formula 1.
[formula 1]
The weight of one initial stage of the weight paper tinsel dish of TS (Total Solid) %=[(oven dry back paper tinsel dish)/be contained in the weight of the filtering solution in the paper tinsel dish] * 100
Experimental example 2: the removal of deposition material test on the mask
Under the normal temperature, with organic deposit material 4,4-N, the mask test piece that N dicarbazole-biphenyl and Poly (p-phenylene) form with the film morphology of 11 μ m respectively, be dipped in the container of the cleaning liquid composition that fills embodiment 1 to 8 and comparative example 1 to 10 respectively 10 minutes, with the washing mask test piece of purifying waste water, utilize nitrogen to carry out drying afterwards.
Then, with the deposition material of UV-lamp (UV lamp) observation mask surface, confirm whether mazarine is removed.At this moment, removed fully and do not had a navy blue situation, deposition material is arranged and can see blue situation with ' X ' expression is residual with the deposition material of ' ◎ ' expression on the mask.
Show the result of experimental example 1,2 as following table 3.
[table 3] experimental example 1 and 2 result
From the Total Solid detected result of described table 3 as can be known, the cleaning liquid composition of embodiment 4,5 (Fig. 1 to Fig. 4) is to using the CBP (4 of organic deposit material as hole transporting layer, 4-N, Ndicarbazole-biphenyl) and outstanding as the solubility property of the Poly (p-phenylene) of the organic polymer deposition material of be difficult for removing relatively.Specifically, shown in Fig. 1 and 2, there is deposition material in the mask test piece at initial stage, but after utilizing the cleaning liquid composition of embodiment 4 to wash, deposition material is removed fully, thereby can clearly observe the mask test piece of clean state.
On the contrary, the cleaning liquid composition in the comparative example is compared embodiment and is shown lower solubility property (table 3), shown in Fig. 5 to 8, can not dissolve 4 fully, 4-N, N dicarbazole-biphenyl or Poly (p-phenylene).
Especially, having used moment of dipole is in the comparative example 7,9,10 of DMSO more than 3.0 and DMAc, does not also almost remove 4,4-N, N dicarbazole-biphenyl or Poly (p-phenylene).And DMAc is defined as operating environment detection material, management object objectionable impurities, exposes the benchmark setting substance in industry safe healthcare method, also is not suitable for when therefore considering user safe.
And, according to the result who removes the deposition material on the mask in the described table 3 and Fig. 1 and 2 (embodiment 4), Fig. 3 and 4 (embodiment 5) as can be known, if use the washings of embodiment 4,5, even the then original deposition material that is difficult for removing is also removed easily, therefore the manufacturing process time and the expense of optoelectronic devices such as Organic Light Emitting Diode can be reduced, and then the characteristic and the reliability of technology of follow-up organic membrane depositing operation can be improved.
Claims (11)
1. deposition material cleaning liquid composition is characterized in that comprising:
The N-N-methyl-2-2-pyrrolidone N-; And
1,3-dimethyl-2-imidazolone.
2. deposition material cleaning liquid composition according to claim 1 is characterized in that comprising:
The N-N-methyl-2-2-pyrrolidone N-of 5～80 weight %; And
1 of 20～95 weight %, 3-dimethyl-2-imidazolone.
3. deposition material cleaning liquid composition according to claim 1 is characterized in that: described composition is used to remove the deposition material attached on the optoelectronic device manufacturing installation.
4. deposition material cleaning liquid composition according to claim 3 is characterized in that: described optoelectronic device manufacturing installation includes the manufacturing installation of OLED.
5. deposition material cleaning liquid composition according to claim 4 is characterized in that: the manufacturing installation of described Organic Light Emitting Diode comprises anti-pasting board or the deposition mas that is used in depositing treatment.
6. a washing methods is characterized in that, comprises the steps: to utilize the described deposition material cleaning liquid composition of claim 1, removes attached to the deposition material on the optoelectronic device manufacturing installation.
7. washing methods according to claim 6 is characterized in that, described deposition material cleaning liquid composition comprises:
The N-N-methyl-2-2-pyrrolidone N-of 5～80 weight %; And
1 of 20～95 weight %, 3-dimethyl-2-imidazolone.
8. washing methods according to claim 6 is characterized in that, removes and carries out under 20～70 ℃ attached to the step of the deposition material on the described optoelectronic device manufacturing installation.
9. washing methods according to claim 6 is characterized in that described optoelectronic device manufacturing installation includes the manufacturing installation of OLED.
10. washing methods according to claim 8 is characterized in that, the manufacturing installation of described Organic Light Emitting Diode comprises anti-pasting board or the deposition mas that is used for depositing treatment.
11. washing methods according to claim 6 is characterized in that, also comprises the steps:
Wash the removed optoelectronic device manufacturing installation of described deposition material with water; And
Dry described optoelectronic device manufacturing installation.
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| KR102640138B1 (en) | 2018-02-06 | 2024-02-26 | 동우 화인켐 주식회사 | Cleaning solution composition |
| KR102640141B1 (en) | 2018-02-06 | 2024-02-26 | 동우 화인켐 주식회사 | Cleaning solution composition |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1426452A (en) * | 2000-04-26 | 2003-06-25 | 大金工业株式会社 | Detergent composition |
| CN1575331A (en) * | 2001-10-24 | 2005-02-02 | 大金工业株式会社 | Composition for cleaning |
| CN1643454A (en) * | 2002-03-25 | 2005-07-20 | 高级技术材料公司 | PH buffered compositions for cleaning semiconductor substrates |
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| US6103680A (en) * | 1998-12-31 | 2000-08-15 | Arch Specialty Chemicals, Inc. | Non-corrosive cleaning composition and method for removing photoresist and/or plasma etching residues |
| JP4421322B2 (en) * | 2004-02-19 | 2010-02-24 | 株式会社トクヤマ | Cleaning method for goods |
| JP2006265300A (en) * | 2005-03-22 | 2006-10-05 | Tokuyama Corp | Detergent |
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| CN1426452A (en) * | 2000-04-26 | 2003-06-25 | 大金工业株式会社 | Detergent composition |
| CN1575331A (en) * | 2001-10-24 | 2005-02-02 | 大金工业株式会社 | Composition for cleaning |
| CN1643454A (en) * | 2002-03-25 | 2005-07-20 | 高级技术材料公司 | PH buffered compositions for cleaning semiconductor substrates |
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| TW201129693A (en) | 2011-09-01 |
| TWI500761B (en) | 2015-09-21 |
| CN102161942B (en) | 2014-12-31 |
| KR101891501B1 (en) | 2018-08-24 |
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