CN102122691B - LED (light-emitting diode) epitaxial wafer, LED structure and formation method of LED structure - Google Patents
LED (light-emitting diode) epitaxial wafer, LED structure and formation method of LED structure Download PDFInfo
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Abstract
The invention provides an LED (light-emitting diode) epitaxial wafer which comprises a substrate, a first porous structure layer formed on the top layer of the substrate, a second porous structure layer formed on the first porous structure layer and an LED structure layer formed on the second porous structure layer, wherein the porosity and aperture of the second porous structure layer are smaller than those of the first porous structure layer, and the LED structure layer at least comprises a first-type semiconductor layer, a luminous layer and a second-type semiconductor layer. An LED structure which has the characteristics of large porosity and great thermal mismatch between an epitaxy on porous silicon and a Si (silicon) material is adopted, thereby enabling a weak porous silicon layer to deform partially, releasing thermal mismatch stress, ensuring the integrity of the epitaxial LED structure, forming the large-size epitaxial LED structure, and improving the quality of an epitaxial crystal of the LED structure layer through the second porous structure layer.
Description
Technical field
The present invention relates to light-emitting diode (light emitting diode, LED) technical field, the particularly a kind of formation method of LED, LED structure and LED structure.
Background technology
In recent years, LED is long with its life-span, luminous efficiency is high, volume is little, sturdy and durable, various colors, is widely used in the fields such as display screen, backlight, special lighting.The core of LED is LED, and its primary structure comprises: substrate, resilient coating, n type semiconductor layer, luminescent layer, electronic barrier layer, p type semiconductor layer.As the luminescent layer of LED core between n type semiconductor layer and p type semiconductor layer, make the PN junction that the interface of p type semiconductor layer and n type semiconductor layer is formed.But due to Al
2o
3(sapphire) or SiC substrate are very expensive, and therefore current LED is very expensive.
Therefore how to manufacture LED component in other more cheap substrate and just become problem demanding prompt solution.Because Si material is cheap, technical maturity, and have diameter wafers, therefore, there is a lot of application based on Si material at present, as the application such as photoelectricity, microwave needs to use different materials, as GaN etc.But because Si material and these Group III-V compound semiconductor materials exist very large thermal stress mismatch, thermal stress mismatch can will cause film to occur be full of cracks (Crack) when larger epitaxial thickness, extension film quality is out not good, because which limit growth thickness and the growth quality of film, Si material substrate is caused not to be applied in LED component well.
Summary of the invention
Object of the present invention is intended at least solve one of above-mentioned technological deficiency, proposes a kind of formation method of LED, LED structure and LED structure especially.
For achieving the above object, one aspect of the present invention proposes a kind of LED epitaxial wafer, comprising: substrate; Be formed in the first porous structure layer on described substrate top layer; Be formed in the second porous structure layer on described first porous structure layer, wherein, the porosity in described second porous structure layer and aperture are all less than porosity in described first porous structure layer and aperture; With the LED structure layer be formed on described second porous structure layer, wherein, the first type semiconductor layer, luminescent layer and Second-Type semiconductor layer is at least comprised among described LED structure layer.
In one embodiment of the invention, also comprise: be formed in the patterned structures layer between described second porous structure layer and described LED structure layer.
In one embodiment of the invention, also comprise: be formed in the 3rd porous structure layer between described first porous structure layer and described substrate, the porosity in described 3rd porous structure layer and aperture are all less than porosity in described first porous structure layer and aperture.
In one embodiment of the invention, described first porous structure layer comprises multiple first area and to be interposed between the second area between described two first areas, wherein, the porosity of described first area and aperture are all greater than porosity and the aperture of described second area.
In one embodiment of the invention, also comprise: be formed in the AlN resilient coating between described second porous structure layer and described LED structure layer.
The present invention also proposed a kind of formation method of LED on the other hand, comprises the following steps: provide substrate; On described substrate top layer, form the first porous structure layer and the second porous structure layer, wherein, the porosity in described second porous structure layer and aperture are all less than porosity in described first porous structure layer and aperture; Form LED structure layer with on described second porous structure layer, wherein, among described LED structure layer, at least comprise the first type semiconductor layer, luminescent layer and Second-Type semiconductor layer.
In one embodiment of the invention, also comprise: between described second porous structure layer and described LED structure layer, form at least one deck patterned structures layer.
In one embodiment of the invention, also comprise: between described first porous structure layer and described substrate, form the 3rd porous structure layer, wherein, the porosity in described 3rd porous structure layer and aperture are all less than porosity in described first porous structure layer and aperture.
In one embodiment of the invention, described first porous structure layer comprises multiple first area and to be interposed between the second area between described two first areas, wherein, the porosity of described first area and aperture are all greater than porosity and the aperture of described second area.
In one embodiment of the invention, also comprise: between described second porous structure layer and described LED structure layer, form AlN resilient coating.
The embodiment of the present invention also proposed a kind of formation method of LED structure more on the one hand, comprising: form LED by above-described method; The second electrode is formed in the Second-Type semiconductor layer of described LED; Described epitaxial wafer is overturn and is transferred to substrate; Remove the first porous structure layer in described epitaxial wafer and the second porous structure layer and described substrate to expose described first type semiconductor layer; The first electrode layer is formed on described first type semiconductor layer.
In one embodiment of the invention, the first porous structure layer in described removal epitaxial wafer and the second porous structure layer and substrate comprise further: peel off the described substrate in described epitaxial wafer, and continue to regenerate new porous structure layer and LED structure layer to form new epitaxial wafer in described substrate; Remove described first porous structure layer and described second porous structure layer.
In one embodiment of the invention, described substrate is metal substrate, and described first electrode layer is transparency electrode.
In one embodiment of the invention, also comprise: on described metal substrate, form reflector layer.
In one embodiment of the invention, described substrate is glass substrate.
In one embodiment of the invention, described glass substrate has the through hole that multiple and described second electrode pair is answered, and is filled with electric conducting material in described through hole.
In one embodiment of the invention, described substrate is ceramic substrate.
In one embodiment of the invention, described ceramic substrate has the through hole that multiple and described second electrode pair is answered, and is filled with electric conducting material in described through hole.
In one embodiment of the invention, also comprise: on described ceramic substrate, form reflector layer.
In one embodiment of the invention, form the first electrode layer on described first type semiconductor layer before, also comprise: roughening is carried out to the surface of described first type semiconductor layer.
The embodiment of the present invention also proposed a kind of LED structure more on the one hand, is formed by method as above.
The embodiment of the present invention has the following advantages:
1, the present invention adopts extension and the larger LED structure of Si material thermal mismatching on the porous silicon that porosity is large, thus thermal mismatch stress can be discharged by fragile porous silicon layer generating portion deformation in cooling procedure, ensure the intact of the LED structure of extension, large-sized LED structure can be extended outward.
2, the release of thermal mismatch stress can be controlled by patterned porous silicon (i.e. the Porous Silicon structures of multiple first area and second area), good mechanical support is provided, improve the quality of epitaxial film further.
3, in embodiments of the present invention, when forming LED structure, substrate and porous structure layer are removed, thus can avoid because the light tight LED structure that cause such as Si substrate are restricted, as heat radiation restriction etc., LED structure can be made vertical stratification in addition, thus increase light-emitting area.
4, in embodiments of the present invention, LED structure can be turn to arbitrary substrate, such as metal substrate, glass substrate or ceramic substrate.Metal substrate can be used as an electrode, thus easily forms the vertical electrode structure of LED, and glass substrate printing opacity can it can be used as exiting surface, and ceramic substrate has good thermal characteristics.
5, in embodiments of the present invention, Si substrate can be reused when forming LED structure, namely again regenerating new LED structure layer in Si substrate.
6, because ceramic substrate and glass substrate are insulator, therefore in embodiments of the present invention, through hole can be set on ceramic substrate and glass substrate, thus be beneficial to the vertical stratification making two sides extraction electrode.
7, in addition, in embodiments of the present invention, because the porous layer upper epitaxial layer quality of less aperture and densification is better, by aperture, less and the second porous structure layer of densification improves the epitaxial crystal quality of LED structure layer, as surface roughness and defect concentration etc., and the porous layer of larger aperture is beneficial to stripping, first porous layer larger by aperture comes at the bottom of peeling liner and epitaxial loayer.
8, on substrate, form reflector layer the light that LED produces to be reflected away, thus increase the light extraction efficiency of LED.
9, before formation first electrode layer, the total reflection that roughening process can reduce light is carried out to the surface of the first type semiconductor layer, increase light extraction efficiency.
10, the AlN resilient coating between the second porous structure layer and described LED structure layer can suppress epitaxial interface defect effectively, prevents extension from forming polycrystalline structure and Antiphase Domain Boundaries etc., thus improves epitaxial layer quality.
The aspect that the present invention adds and advantage will part provide in the following description, and part will become obvious from the following description, or be recognized by practice of the present invention.
Accompanying drawing explanation
The present invention above-mentioned and/or additional aspect and advantage will become obvious and easy understand from the following description of the accompanying drawings of embodiments, wherein:
Fig. 1 is the structure chart of the LED of the embodiment of the present invention;
Fig. 2 is the structure chart of the LED of another embodiment of the present invention;
Fig. 3 is the structure chart of the LED of another embodiment of the present invention;
Fig. 4 is the structure chart of the LED of yet another embodiment of the invention;
Fig. 5 is the structure chart of the LED of another embodiment of the present invention;
Fig. 6 is the structure chart of the LED of yet another embodiment of the invention;
Fig. 7-9 is the formation method intermediate steps schematic diagram of the LED of the embodiment of the present invention;
Figure 10-14 is the intermediate steps schematic diagram of the formation method of the LED structure of the embodiment of the present invention.
Embodiment
Be described below in detail embodiments of the invention, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has element that is identical or similar functions from start to finish.Being exemplary below by the embodiment be described with reference to the drawings, only for explaining the present invention, and can not limitation of the present invention being interpreted as.
Disclosing hereafter provides many different embodiments or example is used for realizing different structure of the present invention.Of the present invention open in order to simplify, hereinafter the parts of specific examples and setting are described.Certainly, they are only example, and object does not lie in restriction the present invention.In addition, the present invention can in different example repeat reference numerals and/or letter.This repetition is to simplify and clearly object, itself does not indicate the relation between discussed various embodiment and/or setting.In addition, the various specific technique that the invention provides and the example of material, but those of ordinary skill in the art can recognize the property of can be applicable to of other techniques and/or the use of other materials.In addition, fisrt feature described below second feature it " on " structure can comprise the embodiment that the first and second features are formed as directly contact, also can comprise other feature and be formed in embodiment between the first and second features, such first and second features may not be direct contacts.
As shown in Figure 1, be the structure chart of the LED of the embodiment of the present invention.This LED 1000 comprises substrate 1100, first porous structure layer 1200, second porous structure layer 1300 and LED structure layer 1400, wherein, the first type semiconductor layer 1410, luminescent layer 1420 and Second-Type semiconductor layer 1430 is comprised among LED structure layer 1400.In one embodiment of the invention, substrate 1100 can be containing Si substrate, such as body Si substrate, SOI substrate etc.Wherein, porosity in second porous structure layer 1300 and aperture are all less than porosity in the first porous structure layer 1200 and aperture, like this can releasing heat mismatch stress by the first porous structure layer 1200, and improved the epitaxial crystal quality of LED structure layer 1400 by the second porous structure layer 1300, as surface roughness and defect concentration etc.Wherein, first type semiconductor layer 1410 can be N-type GaN layer, luminescent layer 1420 can be InGaN/GaN multiple quantum well light emitting layer, Second-Type semiconductor layer 1430 can be P type GaN layer, wherein, also can comprise the P type AIGaN layer between luminescent layer 1420 and Second-Type semiconductor layer 1430, this P type AIGaN layer can be used as barrier layer.In one embodiment of the invention, the second porous structure layer 1300 can be the pure Si to being formed after the first porous structure layer 1200 annealing.Usually, within the thinner thickness of the second porous structure layer 1300 is about ten nm, thus the conduction of stress is convenient to.
As shown in Figure 2, be the structure chart of the LED of another embodiment of the present invention.This LED 1000 also comprises the patterned structures layer 1500 be formed between the second porous structure layer 1300 and LED structure layer 1400.This patterned structures layer 1500 can improve the interfacial state between LED structure layer 1400 and the second porous structure layer 1300.
As shown in Figure 3, be the structure chart of the LED of another embodiment of the present invention.This LED 1000 also comprises the 3rd porous structure layer 1600 be formed between the first porous structure layer 1200 and substrate 1100, wherein, the porosity in the 3rd porous structure layer 1600 and aperture are all less than porosity in the first porous structure layer 1200 and aperture.In an embodiment of the present invention, the first porous structure layer 1200, second porous structure layer 1300 and the 3rd porous structure layer 1600 is formed by anode oxidation method.Particularly, the mode by injection among substrate or control oxidation current is formed, and does not repeat them here.
As shown in Figure 4, be the structure chart of the LED of yet another embodiment of the invention.Wherein, the first porous structure layer 1200 comprises multiple first area 1210 and to be interposed between the second area 1220 between two first areas 1210, and wherein, the porosity of first area 1210 and aperture are all greater than porosity and the aperture of second area 1220.The release of thermal mismatch stress can be controlled like this by patterned porous silicon (i.e. the Porous Silicon structures of multiple first area and second area), good mechanical support is provided, improve the quality of epitaxial film further.As shown in Figure 5, be the structure chart of the LED of another embodiment of the present invention.In this embodiment, also comprise the 3rd porous structure layer 1600, by the stress difference between the 3rd porous structure layer 1600 and the first porous structure layer 1200, the first porous structure layer 1200 can be removed easily in subsequent technique.
As shown in Figure 6, be the structure chart of the LED of yet another embodiment of the invention.This LED 1000 also comprises the AlN resilient coating 1700 be formed between the second porous structure layer 1300 and LED structure layer 1400.Certainly in other embodiments of the invention, this AlN resilient coating 1700 also can be formed between patterned structures layer 1500 and LED structure layer 1400.
As Figure 7-9, be the formation method intermediate steps schematic diagram of the LED of the embodiment of the present invention, the method comprises the following steps:
Step S101, provides substrate 1100.
Step S102, the first porous structure layer 1200 and the second porous structure layer 1300 is formed on substrate 1100 top layer, as shown in Figure 7, wherein, the porosity in the second porous structure layer 1300 and aperture are all less than porosity in the first porous structure layer 1200 and aperture.In one embodiment of the invention, first porous structure layer 1200 comprises multiple first area 1210 and to be interposed between the second area 1220 between two first areas 1210, wherein, the porosity of first area 1210 and aperture are all greater than porosity and the aperture of second area 1220.Wherein, in an embodiment of the present invention, the width of second area 1220 is less.
In a preferred embodiment of the invention, also patterned structures layer 1500 can be formed between the second porous structure layer 1300 and LED structure layer 1400.This patterned structures layer 1500 can improve the interfacial state between LED structure layer 1400 and the second porous structure layer 1300.
In another preferred embodiment of the present invention, also can form the 3rd porous structure layer 1600 between the first porous structure layer 1200 and substrate 1100, wherein, the porosity in the 3rd porous structure layer 1600 and aperture are all less than porosity in the first porous structure layer 1200 and aperture.In an embodiment of the present invention, the first porous structure layer 1200, second porous structure layer 1300 and the 3rd porous structure layer 1600 is formed by anode oxidation method.Particularly, the mode by injection among substrate or control oxidation current is formed, and does not repeat them here.
Step S103, forms AlN resilient coating 1700, as shown in Figure 8 on the second porous structure layer 1300.
Step S104, forms LED structure layer 1400 on AlN resilient coating 1700, as shown in Figure 9, wherein, at least comprises the first type semiconductor layer 1410, luminescent layer 1420 and Second-Type semiconductor layer 1430 among LED structure layer 1400.Wherein, first type semiconductor layer 1410 can be N-type GaN layer, luminescent layer 1420 can be InGaN/GaN multiple quantum well light emitting layer, Second-Type semiconductor layer 1430 can be P type GaN layer, wherein, also can comprise the P type AIGaN layer between luminescent layer 1420 and Second-Type semiconductor layer 1430, this P type AIGaN layer can be used as barrier layer.
As shown in figures 10-14, be the intermediate steps schematic diagram of the formation method of the LED structure of the embodiment of the present invention, the method comprises the following steps:
Step S201, form LED, this LED is epitaxial wafer 1000 as above.
Step S202, forms the second electrode 2100, as shown in Figure 10 on the Second-Type semiconductor layer 1430 of LED.
Step S203, overturns epitaxial wafer and is transferred to substrate 2200, as shown in figure 11.In one embodiment of the invention, described transfer refers to wafer bonding or pressure welding to substrate 2200.In one embodiment of the invention, this substrate 2200 can be metal substrate, glass substrate or ceramic substrate.When adopting glass substrate or ceramic substrate, multiple through hole 2210 can be formed in advance on glass substrate or ceramic substrate, each through hole 2210 is corresponding with a LED unit, just the metal 2220 at glass substrate or the ceramic substrate back side can be connected after forming metal so in through-holes, thus contribute to the vertical electrode structure forming LED.In an embodiment of the present invention, through hole 2210 can be various shape, such as circular, square, rectangle, rhombus etc., and is filled with electric conducting material among through hole 2210.In an embodiment of the present invention, if adopt metal substrate or this kind of light-proof material of ceramic substrate, then need to form reflector layer on metal substrate or ceramic substrate.In one embodiment of the invention, for glass substrate because the size of through hole 2210 is larger, the light extraction efficiency of LED may be affected, therefore also can form reflector layer on glass substrate.Certainly in other embodiments of the invention, also the LED component of two-sided bright dipping can be formed by glass substrate.
Step S204, removes the first porous structure layer 1200 in epitaxial wafer and the second porous structure layer 1300 and substrate 1100 to expose the first type semiconductor layer 1410, as shown in figure 12.In other embodiments of the invention, removal AlN resilient coating 1700 is also comprised.In an embodiment of the present invention, described place to go refers to the mode such as stripping, burn into polishing.In a preferred embodiment of the invention, can at the bottom of first peeling liner 1100, and continue on substrate 1100, to regenerate new porous structure layer and LED structure layer to form new epitaxial wafer, thus this substrate 1100 can also be reused, namely again on this substrate 1100, regenerate new LED layer structure.Such the present invention greatly can reduce the cost of device.In an embodiment of the present invention, also reflector layer 2300 can be comprised.
Step S205, carries out roughening to form matte layer 2400 to the surface of the first type semiconductor layer 1410, as shown in figure 13.
Step S206, forms the first electrode layer 2300, as shown in figure 14 on the matte layer 2400 of the first type semiconductor layer 1410.
The embodiment of the present invention also proposed a kind of LED structure, the LED structure formed by method as above more on the one hand, as shown in figure 14.
The embodiment of the present invention has the following advantages:
1, the present invention adopts extension and the larger LED structure of Si material thermal mismatching on the porous silicon that porosity is large, thus thermal mismatch stress can be discharged by fragile porous silicon layer generating portion deformation in cooling procedure, ensure the intact of the LED structure of extension, large-sized LED structure can be extended outward.
2, the release of thermal mismatch stress can be controlled by patterned porous silicon (i.e. the Porous Silicon structures of multiple first area and second area), good mechanical support is provided, improve the quality of epitaxial film further.
3, in embodiments of the present invention, when forming LED structure, substrate and porous structure layer are removed, thus can avoid because the light tight LED structure that cause such as Si substrate are restricted, as heat radiation restriction etc., LED structure can be made vertical stratification in addition, thus increase light-emitting area.
4, in embodiments of the present invention, LED structure can be turn to arbitrary substrate, such as metal substrate, glass substrate or ceramic substrate.Metal substrate can be used as an electrode, thus easily forms the vertical electrode structure of LED, and glass substrate printing opacity can it can be used as exiting surface, and ceramic substrate has good thermal characteristics.
5, in embodiments of the present invention, Si substrate can be reused when forming LED structure, namely again regenerating new LED structure layer in Si substrate.
6, because ceramic substrate and glass substrate are insulator, therefore in embodiments of the present invention, through hole can be set on ceramic substrate and glass substrate, thus be beneficial to the vertical stratification making two sides extraction electrode.
7, in addition, in embodiments of the present invention, because of less aperture and fine and close porous layer upper epitaxial layer quality better, by aperture, less and the second porous structure layer of densification improves the epitaxial crystal quality of LED structure layer, as surface roughness and defect concentration etc.; And the porous layer of larger aperture is beneficial to stripping, first porous layer larger by aperture comes at the bottom of peeling liner and epitaxial loayer.
8, on substrate, form reflector layer the light that LED produces to be reflected away, thus increase the light extraction efficiency of LED.
9, before formation first electrode layer, the total reflection that roughening process can reduce light is carried out to the surface of the first type semiconductor layer, increase light extraction efficiency.
10, the AlN resilient coating between the second porous structure layer and described LED structure layer can suppress epitaxial interface defect effectively, prevents extension from forming polycrystalline structure and Antiphase Domain Boundaries etc., thus improves epitaxial layer quality.
Although illustrate and describe embodiments of the invention, for the ordinary skill in the art, be appreciated that and can carry out multiple change, amendment, replacement and modification to these embodiments without departing from the principles and spirit of the present invention, scope of the present invention is by claims and equivalency thereof.
Claims (19)
1. a LED epitaxial wafer, is characterized in that, comprising:
Substrate, wherein, described substrate is for containing Si substrate;
Be formed in the first porous structure layer on described substrate top layer;
Be formed in the second porous structure layer on described first porous structure layer, wherein, porosity in described second porous structure layer and aperture are all less than porosity in described first porous structure layer and aperture, wherein, described first porous structure layer and the second porous structure layer is formed by anode oxidation method; With
Be formed in the LED structure layer on described second porous structure layer, wherein, the first type semiconductor layer is at least comprised among described LED structure layer, luminescent layer and Second-Type semiconductor layer, wherein, described first porous structure layer discharges the thermal mismatch stress between described substrate and described LED structure layer, and described second porous structure layer improves the epitaxial crystal quality of described LED structure layer, wherein, described first porous structure layer comprises multiple first area and to be interposed between the second area between described two first areas, wherein, the porosity of described first area and aperture are all greater than porosity and the aperture of described second area.
2. LED as claimed in claim 1, is characterized in that, also comprise:
Be formed in the patterned structures layer between described second porous structure layer and described LED structure layer.
3. LED as claimed in claim 1 or 2, is characterized in that, also comprise:
Be formed in the 3rd porous structure layer between described first porous structure layer and described substrate, the porosity in described 3rd porous structure layer and aperture are all less than porosity in described first porous structure layer and aperture.
4. LED as claimed in claim 1 or 2, is characterized in that, also comprise:
Be formed in the AlN resilient coating between described second porous structure layer and described LED structure layer.
5. a formation method for LED, is characterized in that, comprise the following steps:
There is provided substrate, wherein, described substrate is for containing Si substrate;
The first porous structure layer and the second porous structure layer is formed on described substrate top layer, wherein, porosity in described second porous structure layer and aperture are all less than porosity in described first porous structure layer and aperture, wherein, described first porous structure layer and the second porous structure layer is formed by anode oxidation method; With
LED structure layer is formed on described second porous structure layer, wherein, the first type semiconductor layer is at least comprised among described LED structure layer, luminescent layer and Second-Type semiconductor layer, wherein, described first porous structure layer discharges the thermal mismatch stress between described substrate and described LED structure layer, and described second porous structure layer improves the epitaxial crystal quality of described LED structure layer, wherein, described first porous structure layer comprises multiple first area and to be interposed between the second area between described two first areas, wherein, the porosity of described first area and aperture are all greater than porosity and the aperture of described second area.
6. the formation method of LED as claimed in claim 5, is characterized in that, also comprise:
At least one deck patterned structures layer is formed between described second porous structure layer and described LED structure layer.
7. the formation method of the LED as described in claim 5 or 6, is characterized in that, also comprise:
Between described first porous structure layer and described substrate, form the 3rd porous structure layer, wherein, the porosity in described 3rd porous structure layer and aperture are all less than porosity in described first porous structure layer and aperture.
8. the formation method of the LED as described in claim 5 or 6, is characterized in that, also comprise:
AlN resilient coating is formed between described second porous structure layer and described LED structure layer.
9. a formation method for LED structure, is characterized in that, comprising:
LED is formed by the method described in any one of claim 5-8;
The second electrode is formed in the Second-Type semiconductor layer of described LED;
Described epitaxial wafer is overturn and is transferred to substrate;
Remove the first porous structure layer in described epitaxial wafer, the second porous structure layer and described substrate to expose described first type semiconductor layer;
The first electrode layer is formed on described first type semiconductor layer.
10. the formation method of LED structure as claimed in claim 9, is characterized in that, the first porous structure layer in described removal epitaxial wafer and the second porous structure layer and substrate comprise further:
Peel off the described substrate in described epitaxial wafer, and continue to regenerate new porous structure layer and LED structure layer to form new epitaxial wafer in described substrate;
Remove described first porous structure layer and described second porous structure layer.
The formation method of 11. LED structure as claimed in claim 9, is characterized in that, also comprise:
Remove the AlN resilient coating be formed between described second porous structure layer and described LED structure layer.
The formation method of 12. LED structure as claimed in claim 9, it is characterized in that, described substrate is metal substrate.
The formation method of 13. LED structure as claimed in claim 9, it is characterized in that, described substrate is glass substrate.
The formation method of 14. LED structure as claimed in claim 13, it is characterized in that, described glass substrate has the through hole that multiple and described second electrode pair is answered, and is filled with electric conducting material in described through hole.
The formation method of 15. LED structure as claimed in claim 9, it is characterized in that, described substrate is ceramic substrate.
The formation method of 16. LED structure as claimed in claim 15, it is characterized in that, described ceramic substrate has the through hole that multiple and described second electrode pair is answered, and is filled with electric conducting material in described through hole.
The formation method of 17. LED structure as described in claim 11,13 or 15, is characterized in that, also comprise:
Reflector layer is formed on described substrate.
The formation method of 18. LED structure as claimed in claim 9, is characterized in that, before forming the first electrode layer, also comprises on described first type semiconductor layer:
Roughening is carried out to the surface of described first type semiconductor layer.
19. 1 kinds of LED structure, is characterized in that, are formed by the method described in any one of claim 9-18.
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| CN201110021061.2A CN102122691B (en) | 2011-01-18 | 2011-01-18 | LED (light-emitting diode) epitaxial wafer, LED structure and formation method of LED structure |
| PCT/CN2011/082174 WO2012065536A1 (en) | 2010-11-15 | 2011-11-14 | Semiconductor structure and method for forming the same |
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| WO2012065536A1 (en) * | 2010-11-15 | 2012-05-24 | Chuwen Wang | Semiconductor structure and method for forming the same |
| DE112011104913T5 (en) * | 2011-02-18 | 2013-12-24 | Epistar Corp. | Optoelectronic device and method for producing the same |
| TW201312815A (en) * | 2011-09-05 | 2013-03-16 | Taiwan Maxwave Co Ltd | LED die and process thereof |
| US9012912B2 (en) * | 2013-03-13 | 2015-04-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafers, panels, semiconductor devices, and glass treatment methods |
| WO2020185021A1 (en) | 2019-03-12 | 2020-09-17 | 에스케이씨 주식회사 | Packaging substrate, and semiconductor device comprising same |
| EP3916771A4 (en) | 2019-03-12 | 2023-01-11 | Absolics Inc. | Packaging substrate and semiconductor device comprising same |
| JP7087205B2 (en) | 2019-03-29 | 2022-06-20 | アブソリックス インコーポレイテッド | Packaging glass substrate for semiconductors, packaging substrate for semiconductors and semiconductor devices |
| KR20220089715A (en) | 2019-08-23 | 2022-06-28 | 앱솔릭스 인코포레이티드 | Packaging substrate and semiconductor device comprising of the same |
| CN111477535B (en) * | 2019-12-31 | 2022-10-11 | 厦门市三安集成电路有限公司 | Composite silicon substrate and preparation method and application thereof |
| WO2022099500A1 (en) * | 2020-11-11 | 2022-05-19 | 苏州晶湛半导体有限公司 | Light-emitting structure and preparation method therefor |
| US11626371B2 (en) * | 2020-12-28 | 2023-04-11 | Infineon Technologies Ag | Semiconductor structure with one or more support structures |
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| CN1221205A (en) * | 1997-12-26 | 1999-06-30 | 索尼株式会社 | Semiconductor substrate and thin-film semiconductive member, and method for making thereof |
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| US6375738B1 (en) * | 1999-03-26 | 2002-04-23 | Canon Kabushiki Kaisha | Process of producing semiconductor article |
| EP1220330A1 (en) * | 2000-12-21 | 2002-07-03 | Interuniversitair Microelektronica Centrum Vzw | A method of producing a semiconductor layer on a substrate |
| CN1665969A (en) * | 2002-06-28 | 2005-09-07 | 日立电线株式会社 | Porous substrate and its manufacturing method, and GaN semiconductor multilayer substrate and its manufacturing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1221205A (en) * | 1997-12-26 | 1999-06-30 | 索尼株式会社 | Semiconductor substrate and thin-film semiconductive member, and method for making thereof |
| CN1228607A (en) * | 1998-02-18 | 1999-09-15 | 佳能株式会社 | Composite member, its separation method, and preparation method of semiconductor substrate by utilization thereof |
| US6375738B1 (en) * | 1999-03-26 | 2002-04-23 | Canon Kabushiki Kaisha | Process of producing semiconductor article |
| EP1220330A1 (en) * | 2000-12-21 | 2002-07-03 | Interuniversitair Microelektronica Centrum Vzw | A method of producing a semiconductor layer on a substrate |
| CN1665969A (en) * | 2002-06-28 | 2005-09-07 | 日立电线株式会社 | Porous substrate and its manufacturing method, and GaN semiconductor multilayer substrate and its manufacturing method |
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