CN102117602A - Drive structure of display panel - Google Patents
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- CN102117602A CN102117602A CN2009102480799A CN200910248079A CN102117602A CN 102117602 A CN102117602 A CN 102117602A CN 2009102480799 A CN2009102480799 A CN 2009102480799A CN 200910248079 A CN200910248079 A CN 200910248079A CN 102117602 A CN102117602 A CN 102117602A
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Abstract
The invention discloses a drive structure of a display panel, comprising data lines, scanning lines and pixel units, wherein the pixel units are arranged in columns and rows. The pixel units comprise transistors and pixel electrodes, the source electrodes of the transistors are connected with the data lines, the grid electrodes of the transistors are connected with the scanning lines, the drain electrodes of the transistors are connected with the pixel electrodes, and the grid electrodes of the transistors of the same row of pixel units are connected with the same scanning line; and the types of the transistors in two adjacent columns of pixel units are opposite, wherein the transistors include P-type transistors and N-type transistors, and the source electrodes of the transistors are connected with the same data line. According to the invention, the aperture opening ratio is increased and the cost is reduced.
Description
Technical field
The present invention relates to flat panel display, particularly a kind of drives structure that is used for liquid crystal display panel of thin film transistor.
Background technology
Because advantages such as liquid crystal indicator has gently, approaches, occupation of land is little, power consumption is little, radiation is little are widely used in the various data processing equipments, for example TV, notebook computer, mobile phone, personal digital assistant etc.(Thin Film Transistor Liquid Crystal Display TFT-LCD) is modal a kind of display panels to adopt thin film transistor (TFT) to control the liquid crystal display panel of thin film transistor that liquid crystal molecule is arranged in the liquid crystal indicator.
Display panels comprises array base palte, color membrane substrates and the liquid crystal layer that is oppositely arranged, wherein, the pixel cell that array base palte is provided with sweep trace, data line and is defined by sweep trace and data line, the substrate of liquid crystal indicator is made of a large amount of pixel cells, be provided with a large amount of sweep traces and data line simultaneously, be used for providing drive signal described pixel cell.Described sweep trace links to each other with the grid of thin film transistor (TFT), is used for the turn-on and turn-off of control TFT; Described data line links to each other with the source electrode of thin film transistor (TFT), is used for providing driving voltage to pixel electrode, is used to control the degree of deflection of liquid crystal molecule, thereby control sees through its light intensity, produces different GTGs.
At disclosed application number is to disclose a kind of TFT display device in 200510080766.6 the Chinese patent application, the main shift register that uses comes driven sweep line and data line, realized the procedure for displaying of TFT display device, and by optimizing the power consumption that signal that shift register inputs to sweep trace has reduced display device.But do not relate to the concrete arrangement of sweep trace and data line in the such scheme, it is the drives structure of sweep trace and data line, in fact, because sweep trace, data line and thin film transistor (TFT) all are lighttight, its area is crossed the aperture opening ratio (Aperture Ratio) that conference influences whole display panel.Described aperture opening ratio refers to the ratio of the area and the total area of transmission region in the display panel, and aperture opening ratio is low can to influence display effect, and can increase the overall power consumption of display panel.
Fig. 1 shows a kind of drives structure of the display panel of prior art, comprise data line S11 to S16, sweep trace G11 to G13 and the pixel cell that is arranged in rows and columns, with one of them pixel cell 100 is example, described pixel cell 100 comprises transistor 1001 and pixel electrode 1002, the source electrode of described transistor 1001 connects described data line, grid connects described sweep trace, and drain electrode connects described pixel electrode 1002.Pixel cell among Fig. 1 is arranged into 3 row, 6 row, forms array of display.Fig. 1 only is a synoptic diagram, can comprise more multirow and the more pixel cell of multiple row in actual production technology.As shown in Figure 1, the first transistorized grid that walks in the pixel cell of the third line is connected to sweep trace G11, G12 and G13 respectively, and first row to the transistorized source electrode in the pixel cell of the 6th row connects data line S11 to S16 respectively.Fig. 2 shows the drive signal of sweep trace in the drives structure of this programme, because the transistor types among Fig. 1 is the N type, so high level is useful signal, and described sweep trace G11 to G13 imports significant level successively, and first backgating first walks to the third line pixel cell.In the gating process, described data line S11 to S16 imports corresponding data-signal, and each pixel cell is driven, and finishes procedure for displaying.Therefore, the drives structure of such scheme is the corresponding sweep trace independently of each row, the corresponding data line independently of each row.
Fig. 3 shows another drives structure of the display panel of prior art, improves aperture opening ratio by the shared data line.Similarly, described drives structure comprises data line S21 to S23, sweep trace G21 to G26 and the pixel cell that is arranged in rows and columns.Different with described scheme before is, in the drives structure of this programme, the shared same data line of pixel cell of adjacent two row, and be positioned at the different sweep trace of pixel cell connection, prevented that two pixel cells that connect same data line from being driven (mistake drives) simultaneously in a gating process with the shared same data line of delegation.Fig. 4 shows the drive signal of sweep trace in the drives structure of this programme, in conjunction with Fig. 3 and shown in Figure 4, sweep trace G21 to G26 imports significant level successively and drives, pixel cell during wherein the significant level of sweep trace G21, G23, G25 difference gating first and third, five is listed as, finish by the driving process of gating pixel cell by the data-signal among the data line S21 to S23, the significant level of sweep trace G22, G24, G26 is the pixel cell in gating second, four, six row then, finishes its driving process by the data-signal among the data line S21.Two pixel cells with first row and secondary series in first row are example, carry out gating and driving by sweep trace G21 and G22 respectively owing to be connected in two pixel cells of same data line S21, therefore can not produce the problem that mistake drives.The drives structure of such scheme is corresponding two sweep traces of each row, and shared same the data line of adjacent two row compared with the drives structure of described scheme before, and the quantity of data line has reduced half, but the quantity of sweep trace has but increased by one times, and its aperture opening ratio does not improve significantly.
Therefore, need a kind of new drives structure, improve the aperture opening ratio of display panel.
Summary of the invention
The problem that the present invention solves provides a kind of drives structure of display panel, improves aperture opening ratio.
For addressing the above problem, the invention provides a kind of drives structure of display panel, comprise: data line, sweep trace and the pixel cell that is arranged into row and column, described pixel cell comprises transistor and pixel electrode, described transistorized source electrode connects described data line, grid connects described sweep trace, drain electrode connects described pixel electrode, connect same sweep trace with the transistorized grid in the pixel cell in the delegation, transistor types in the pixel cell of adjacent two row is opposite, one is the P transistor npn npn, and another is the N transistor npn npn, and its source electrode connects same data line.
Optionally, described transistor comprises P transistor npn npn and N transistor npn npn.
Optionally, described display panel is a liquid crystal display panel of thin film transistor.
Optionally, the transistor in the pixel cell in the same row all is the P transistor npn npn or all is the N transistor npn npn.
Optionally, described transistor is a polycrystalline SiTFT.
Compared with prior art, the present invention has the following advantages:
The drives structure of the display panel in the technique scheme, the shared same data line of pixel cell of adjacent two row, and the transistor types in the pixel cell of adjacent two row is opposite, by same sweep trace to distinguishing gating with the pixel cell of shared same data line in the delegation, reduce the quantity of sweep trace, improved aperture opening ratio.
Description of drawings
Fig. 1 is a kind of drives structure synoptic diagram of the display panel of prior art;
Fig. 2 is the drive signal of the sweep trace of drives structure shown in Fig. 1;
Fig. 3 is the another kind of drives structure synoptic diagram of the display panel of prior art;
Fig. 4 is the drive signal of the sweep trace of drives structure shown in Fig. 3;
Fig. 5 is the drives structure synoptic diagram of the display panel of the embodiment of the invention;
Fig. 6 is the drive signal of sweep trace of the drives structure of the embodiment of the invention.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can more be become apparent, the specific embodiment of the present invention is described in detail below in conjunction with accompanying drawing.
Set forth detail in the following description so that fully understand the present invention.But the present invention can be different from alternate manner described here and implements with multiple, and those skilled in the art can do similar popularization under the situation of intension of the present invention.Therefore the present invention is not subjected to the restriction of following public embodiment.
In the prior art, drives structure shown in Figure 3 is by the shared same data line of pixel cell of adjacent two row, reduced the quantity of data line, but gating prevents that mistake from driving to need different sweep traces to come to carry out respectively to the pixel cell that connects same data line, make each row pixel cell need two sweep traces, influenced the aperture opening ratio of whole display panel.
The invention provides a kind of drives structure, transistor types in the pixel cell of adjacent two row is opposite, make the significant level of its conducting opposite, therefore can the shared data line and come first rear drive to be connected in the pixel cell of same data line with same sweep trace, avoid missing driving problems.Because the only corresponding sweep trace of each row pixel cell, adjacent two are listed as shared same data line, have therefore reduced the quantity of sweep trace and data line, have improved aperture opening ratio.
Fig. 5 has provided the drives structure synoptic diagram of the display panel of the embodiment of the invention.As shown in Figure 5, described drives structure comprises data line S31, S32, S33, and sweep trace G31, G32, G33, and the pixel cell that is arranged in rows and columns, the pixel cell among Fig. 5 arrange and form the array of 3 row, 6 row.With one of them pixel cell 200 is example, and described pixel cell 200 comprises transistor 2001 and pixel electrode 2002, and the source electrode of described transistor 2001 connects described data line, and grid connects described sweep trace, and drain electrode connects described pixel electrode 2002.Fig. 5 only is a synoptic diagram, and in actual production, according to the actual requirements, described display panel can comprise more multirow and the more pixel cell of multiple row.
Display panel described in the present embodiment is TFT-LCD.Described transistor is a thin film transistor (TFT), is preferably polycrystalline SiTFT, compares with amorphous silicon film transistor, and its response speed is faster, makes display quality better.Described pixel electrode is tin indium oxide (ITO).Still be example with described pixel cell 200, when the sweep trace G31 that described transistor 2001 connects imports useful signal, transistor 2001 is a conducting state, make the data-signal in the corresponding data line input to described pixel electrode 2002, drive the deflection angle of liquid crystal molecule, thereby control sees through the light intensity of this pixel cell, produces different GTGs.
Still with reference to figure 5, the pixel cell in each row of described drives structure connects same sweep trace, is specially the first row pixel cell and connects sweep trace G31, and the second row pixel cell connects sweep trace G32, and the third line pixel cell connects sweep trace G33.Transistor types in the adjacent two row pixel cells of described drives structure is opposite, and one classifies P type polycrystalline SiTFT as in the present embodiment, and another classifies N type polycrystalline SiTFT as, and the shared same sweep trace of pixel cell in adjacent two row.The transistor of the pixel cell in the present embodiment in first and third, five row all is a N type polycrystalline SiTFT, and the transistor of the pixel cell in second, four, six row all is a P type polycrystalline SiTFT.One group in twos of first to the 6th row pixel cell, shared same data line is specially first row and the secondary series pixel cell shared data line S31, the 3rd row and the 4th row pixel cell shared data line S32, the 5th row and the 6th row pixel cell shared data line S33.Because the polycrystalline SiTFT type opposite in the two adjacent row pixel cells, the level of the useful signal of its conducting is also opposite accordingly, therefore for the pixel cell in the delegation, can use same sweep trace that P type polycrystalline SiTFT in this row and N type polycrystalline SiTFT are carried out gating respectively, thereby can not cause the mistake driving problems of two pixel cells of shared same data line and same sweep trace.
The drives structure of present embodiment is compared with first kind of drives structure in the background technology, and the quantity of data line reduces half; Compare with second kind of drives structure in the background technology, the quantity of sweep trace reduces half, thereby has reduced the area that sweep trace and data line account in display panel, has improved aperture opening ratio.Because the quantity of sweep trace and data line reduces to some extent, also reduced the manufacturing cost of display panel simultaneously.
Fig. 6 has provided the drive signal of drives structure corresponding scanning line shown in Figure 5.In conjunction with Fig. 5 and Fig. 6, sweep trace G31 at first imports the useful signal of positive level among Fig. 6, make the N type polycrystalline SiTFT conducting in first row among Fig. 5 and P type polycrystalline SiTFT still is off state, promptly first the row in first and third, five row pixel cells by gating, use the data-signal among the data line S31 to S33 to finish the driving process, polycrystalline SiTFT in the pixel cell that be listed as this moment second, four, six is an off state, so the data-signal among the data line S31 to S33 can not cause mistake to drive pixel electrode wherein.The useful signal of the negative level of sweep trace G31 input afterwards, make the P type polycrystalline SiTFT conducting in the row of winning and N type polycrystalline SiTFT turn-offs, promptly first the row in second, four, six row in pixel cell by gating, use the data-signal among the data line S31 to S33 to finish the driving process, because the polycrystalline SiTFT in first and third, the five row pixel cells is an off state at this moment, therefore can not cause mistake to drive to it.So far, finished the driving process of the first row pixel cell.Similarly, use sweep trace G32 and G33 respectively the pixel cell of second row and the third line to be carried out gating and driving afterwards more respectively, finish whole driving process.
The technical program has reduced half data line on the basis that does not increase sweep trace, improved the aperture opening ratio of display panel, has reduced the driving circuit of display panel and the cost of back light unit; Owing to reduced data line, can in unit area, obtain higher resolution, make image show more clear exquisiteness, improved image displaying quality.
Need to prove that the polycrystalline SiTFT type in the present embodiment in the same row pixel cell is identical, all be P type polycrystalline SiTFT or all be N type polycrystalline SiTFT, make manufacture process simple relatively.In other embodiments of the invention, the polycrystalline SiTFT type in the same row pixel cell can be different, as long as guarantee with the polycrystalline SiTFT type opposite in two pixel cells of shared same data line adjacent in the delegation.
In sum, the invention provides a kind of drives structure of display panel, the shared same data line of pixel cell of adjacent two row, and opposite with the transistor types in two pixel cells of shared same data line in the delegation, one is the P transistor npn npn, and another is the N transistor npn npn, feasible pixel cell with delegation only needs a sweep trace, reduce the quantity of sweep trace, improved aperture opening ratio, reduced cost.
Embodiments of the invention are to be example with TFT-LCD, in production application, the drives structure of the technical program also can be used for other array display structures in the flat pannel display field, as the active-matrix organic LED panel (Active Matrix Organic Light Emitting Diode, AMOLED).
Though the present invention with preferred embodiment openly as above; but it is not to be used for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can utilize the method and the technology contents of above-mentioned announcement that technical solution of the present invention is made possible change and modification; therefore; every content that does not break away from technical solution of the present invention; to any simple modification, equivalent variations and modification that above embodiment did, all belong to the protection domain of technical solution of the present invention according to technical spirit of the present invention.
Claims (5)
1. the drives structure of a display panel comprises data line, sweep trace and the pixel cell that is arranged into row and column, and described pixel cell comprises transistor and pixel electrode, described transistorized source electrode connects described data line, grid connects described sweep trace, and drain electrode connects described pixel electrode
It is characterized in that,
Connect same sweep trace with the transistorized grid in the pixel cell in the delegation, the transistor types in the pixel cell of adjacent two row is opposite, and one is the P transistor npn npn, and another is the N transistor npn npn, and its source electrode connects same data line.
2. the drives structure of display panel according to claim 1 is characterized in that, described transistor comprises P transistor npn npn and N transistor npn npn.
3. the drives structure of display panel according to claim 1 is characterized in that, described display panel is a liquid crystal display panel of thin film transistor.
4. the drives structure of display panel according to claim 1 is characterized in that, the transistor in the pixel cell in the same row all is the P transistor npn npn or all is the N transistor npn npn.
5. according to the drives structure of each described display panel in the claim 1 to 4, it is characterized in that described transistor is a polycrystalline SiTFT.
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| CN2009102480799A CN102117602A (en) | 2009-12-31 | 2009-12-31 | Drive structure of display panel |
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| CN2009102480799A CN102117602A (en) | 2009-12-31 | 2009-12-31 | Drive structure of display panel |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105047161A (en) * | 2015-08-26 | 2015-11-11 | 京东方科技集团股份有限公司 | Pixel unit driving device and method, and display apparatus |
| CN105374332A (en) * | 2015-12-10 | 2016-03-02 | 深圳市华星光电技术有限公司 | Liquid display and source electrode side fan-out area circuit thereof |
| CN105575318A (en) * | 2016-03-18 | 2016-05-11 | 京东方科技集团股份有限公司 | Display panel and display apparatus |
| US9519191B2 (en) | 2014-10-22 | 2016-12-13 | Shenzhen China Star Optoelectronics Technology Co., Ltd | Liquid crystal panel and the array substrate thereof |
| CN106920515A (en) * | 2015-12-24 | 2017-07-04 | 群创光电股份有限公司 | The drive circuit and its display panel of active matrix organic light-emitting diode |
| CN106980403A (en) * | 2016-01-18 | 2017-07-25 | 群创光电股份有限公司 | Touch-control display panel |
| WO2018184377A1 (en) * | 2017-04-05 | 2018-10-11 | 京东方科技集团股份有限公司 | Array substrate and manufacturing method thereof, display panel and driving method thereof, and display device |
| CN109300396A (en) * | 2018-10-23 | 2019-02-01 | Oppo（重庆）智能科技有限公司 | A kind of display panel, display screen component and electronic device |
| CN110992910A (en) * | 2019-12-12 | 2020-04-10 | 维沃移动通信有限公司 | Display circuit and brightness control method of display panel |
| CN111123595A (en) * | 2019-12-31 | 2020-05-08 | 惠州视维新技术有限公司 | Panel and driving method |
| WO2020113652A1 (en) * | 2018-12-04 | 2020-06-11 | 惠科股份有限公司 | Display panel and display apparatus |
| CN115079479A (en) * | 2022-07-08 | 2022-09-20 | 苏州华星光电技术有限公司 | Display panel and display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US9519191B2 (en) | 2014-10-22 | 2016-12-13 | Shenzhen China Star Optoelectronics Technology Co., Ltd | Liquid crystal panel and the array substrate thereof |
| CN104298038B (en) * | 2014-10-22 | 2017-03-15 | 深圳市华星光电技术有限公司 | Display panels and its array base palte |
| CN105047161A (en) * | 2015-08-26 | 2015-11-11 | 京东方科技集团股份有限公司 | Pixel unit driving device and method, and display apparatus |
| US10380959B2 (en) | 2015-08-26 | 2019-08-13 | Boe Technology Group Co., Ltd. | Pixel unit driving circuit, driving method and display apparatus for pixel unit using alternately switching elements having inverted polarities |
| CN105374332A (en) * | 2015-12-10 | 2016-03-02 | 深圳市华星光电技术有限公司 | Liquid display and source electrode side fan-out area circuit thereof |
| CN106920515A (en) * | 2015-12-24 | 2017-07-04 | 群创光电股份有限公司 | The drive circuit and its display panel of active matrix organic light-emitting diode |
| CN106980403B (en) * | 2016-01-18 | 2020-01-21 | 群创光电股份有限公司 | Touch control display panel |
| CN106980403A (en) * | 2016-01-18 | 2017-07-25 | 群创光电股份有限公司 | Touch-control display panel |
| CN105575318A (en) * | 2016-03-18 | 2016-05-11 | 京东方科技集团股份有限公司 | Display panel and display apparatus |
| CN105575318B (en) * | 2016-03-18 | 2019-02-26 | 京东方科技集团股份有限公司 | A kind of display panel and display device |
| WO2018184377A1 (en) * | 2017-04-05 | 2018-10-11 | 京东方科技集团股份有限公司 | Array substrate and manufacturing method thereof, display panel and driving method thereof, and display device |
| CN109300396A (en) * | 2018-10-23 | 2019-02-01 | Oppo（重庆）智能科技有限公司 | A kind of display panel, display screen component and electronic device |
| CN109300396B (en) * | 2018-10-23 | 2021-06-01 | Oppo（重庆）智能科技有限公司 | Display panel, display screen assembly and electronic device |
| WO2020113652A1 (en) * | 2018-12-04 | 2020-06-11 | 惠科股份有限公司 | Display panel and display apparatus |
| US20210232011A1 (en) * | 2018-12-04 | 2021-07-29 | HKC Corporation Limited | Display panel and display device |
| US11487178B2 (en) * | 2018-12-04 | 2022-11-01 | HKC Corporation Limited | Display panel and display device |
| CN110992910A (en) * | 2019-12-12 | 2020-04-10 | 维沃移动通信有限公司 | Display circuit and brightness control method of display panel |
| CN111123595A (en) * | 2019-12-31 | 2020-05-08 | 惠州视维新技术有限公司 | Panel and driving method |
| CN115079479A (en) * | 2022-07-08 | 2022-09-20 | 苏州华星光电技术有限公司 | Display panel and display device |
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Application publication date: 20110706 |