CN102116900A - Method for manufacturing PLC (Programmable Logic Controller) device - Google Patents

Abstract

The invention belongs to the technical field of planar optic splitters, and particularly relates to a method for manufacturing an optic waveguide. The method comprises the steps of: forming a layer of photoresist on a glass substrate; carrying out photoetching to form a graph; forming an optic waveguide core layer with high refractive index in a groove between the photoresist; stripping the photoresist; and forming an upper film coating layer with low refractive index. The method for manufacturing the optic waveguide is simple in technological process, low in requirements of raw materials and production equipment, low in production cost and easy for realizing industrialized scale production.

Description

A kind of manufacture method of PLC optical device

Technical field

The invention belongs to PLC splitter technologies field, be specifically related to a kind of planar light shunt (Planar Lightwave Circuit, manufacture method PLC).

Background technology

Current, the progressively expansion that FTTX (Optical Access Network) builds specifically will realize FTTC (Fiber To The Curb), FTTB (Fiber To The Building), FTTH (fiber-to-the-home front yard), FTTD (fiber to the desk), the integration of three networks multimedia transmission and PDS (comprehensive wiring system) schemes such as (voice network, data network, cable television networks).Build up Full Fibre Network, except the various structure optical distribution cable of needs, leading in cable are realized also needing optical branching device finally to finish fiber-to-the-home purpose in a large number the continuing and reallocating of fiber optic network.

The PLC optical device is generally made on six kinds of materials, and they are: lithium niobate (LiNbO3), III-V family semiconducting compound, silicon dioxide (SiO ₂), SOI(Silicon-on-Insulator, silicon-on-insulator), polymkeric substance (Polymer) and glass.Wherein, the lithium niobate waveguide is to form waveguide by diffusion Ti ion on lithium columbate crystal, and waveguiding structure is a diffused.The InP waveguide is to claim the end and under-clad layer with InP, is sandwich layer with InGaAsP, is top covering with InP or InP/ air, and waveguiding structure is for burying ridged or ridged.SiO 2 waveguide is to claim the end with the silicon chip, with the SiO of difference doping ₂Material is sandwich layer and covering, and waveguiding structure is for burying rectangle.The SOI waveguide is to make on the SOI substrate, claims the end, under-clad layer, sandwich layer and top covering material to be respectively Si, SiO ₂, Si and air, waveguiding structure is a ridged.Polymer waveguide is to claim the end with the silicon chip, is sandwich layer with the Polymer material of different levels of doping, and waveguiding structure is for burying rectangle.Glass waveguide is to form waveguide by diffusion Ag ion on glass material, and waveguiding structure is a diffused.In the PLC of above-mentioned six kinds of materials optical device, silicon dioxide optical waveguide has good optical, electricity, mechanical property and thermal stability, is considered to the integrated technological approaches that practical prospect is arranged most of passive light.At present, the technology of manufacturing silicon dioxide optical waveguide is generally:

1) adopts flame hydrolysis (FHD) or chemical vapor deposition method (CVD), growth one deck SiO on silicon chip 101 ₂, wherein Doping Phosphorus, boron ion are as optical waveguide under-clad layer 102, as shown in Figure 1;

2) adopt FHD or CVD technology, regrowth one deck SiO on under-clad layer 102 ₂, as optical waveguide sandwich layer 103, doped germanium ion wherein obtains the refringence that needs, and the two-layer SiO of growth before making it by the annealing hardening process ₂Become evenly fine and close, as shown in Figure 2;

3) carry out photoetching, the optical waveguide figure of needs 104 is protected with photoresist, as shown in Figure 3;

4) adopt reactive ion etching (RIE) technology, non-optical waveguide zone is etched away, as shown in Figure 4;

5) remove photoresist, adopt FHD or CVD technology, on optical waveguide sandwich layer 103, cover one deck SiO again ₂, wherein Doping Phosphorus, boron ion as optical waveguide top covering 105, by the annealing hardening process, make top covering SiO then ₂Become evenly fine and close, as shown in Figure 5.

Aforesaid silicon dioxide optical waveguide technology is the main flow manufacturing technology of PLC optical device product at present, commonplace in the world employing.But problem is present in equipment and drops into high, high, the starting material requirement height (all adopting imported materials and items) of maintenance cost, and this technology manufacture difficulty is big.

Summary of the invention

In view of this, the objective of the invention is to propose a kind of manufacture method of silicon dioxide optical waveguide, can under lower cost drops into, realize the industrial large-scale production of silicon dioxide optical waveguide.

The manufacture method of the fiber waveguide device that the present invention proposes, concrete steps comprise:

A quartz glass substrate is provided;

The deposit photoresist;

Photoetching forms figure;

Deposit one deck low-index material;

Deposit one deck high-index material;

Return and carve described high-index material of part and low-index material, described high-index material on the photoresist and low-index material removed and keep described high index of refraction layer material and low-index material in the groove that is deposited between the photoresist, to form high refractive index core and one deck low-index layer;

Divest photoresist;

The deposit low refractive index film.

Wherein, in the manufacture method of above-mentioned fiber waveguide device, the thickness range of described photoresist is the 0.5-12 micron; The thickness range of described high refractive index core is the 0.5-11 micron, and its width range is the 0.5-20 micron.

Method for manufacturing optical waveguide technological process proposed by the invention is simple, and starting material and production equipment require low, have reduced production cost, are easy to realize industrial large-scale production.Simultaneously, this method can also be applied in the integrated circuit, forms the light-path of light interconnection.

Description of drawings

Fig. 1 to Fig. 5 is the manufacturing process flow diagram of the silicon dioxide optical waveguide of prior art.

Fig. 6 is the synoptic diagram of an embodiment of silicon dioxide optical waveguide provided by the invention.

Fig. 7 is the sectional view of silicon dioxide optical waveguide shown in Figure 6 along the AB direction.

Fig. 8 to Figure 13 is the manufacturing provided by the present invention process chart of an embodiment of silicon dioxide optical waveguide as shown in Figure 6.

Embodiment

The present invention is further detailed explanation below in conjunction with accompanying drawing and embodiment, in the drawings, for convenience of description, amplifies or dwindled the thickness in layer and zone, shown in size do not represent physical size.Although the physical size that reflects device that these figure can not entirely accurate, their zones that still has been complete reflection and form mutual alignment between the structure, particularly form between the structure up and down and neighbouring relations.Simultaneously in the following description, employed term substrate can be understood as and comprises the just Semiconductor substrate in processes, may comprise other prepared thin layer thereon.

Fig. 6 is the synoptic diagram of an embodiment of optical waveguide provided by the present invention, and direction shown in the CD is the optical propagation direction in the silicon dioxide optical waveguide.Fig. 7 is the sectional view of optical waveguide shown in Figure 6 along the AB direction.As shown in Figure 7, this optical waveguide comprises quartz substrate 301, waveguide core layer segment 302, the overlayer 303 of low-refraction and the lid 304 of quartz material as under-clad layer.

Silicon dioxide optical waveguide device proposed by the invention can be by a lot of method manufacturings, and below what narrated is the manufacturing provided by the present invention technological process of an embodiment of silicon dioxide optical waveguide device as shown in Figure 7.

At first, provide the quartz substrate 201 of a twin polishing, its thickness is preferably 1.25 millimeters.Follow deposit one deck negative photoresist 202 on quartz substrate 201, the thickness of photoresist 202 can be the 0.5-12 micron, and photoetching forms figure then, as shown in Figure 8.

Next, be coated with the low-index material 204 of one deck 0.5 micron thickness earlier with the method for spin coating, form the optical waveguide sandwich layer 203 of the high index of refraction of about 2 micron thickness again with the method for spin coating.As shown in Figure 9, doped with Ge or Ti ion are to improve its refractive index in the high index of refraction spin-on material, and under the condition of 3000rpm, spin coating can obtain the high refractive index film of about 2-3 micron thickness in 40 seconds.

Next, adopt the optical waveguide part of buffered hydrofluoric acid etch liquid (BHF) etching optical waveguide sandwich layer 203 formation devices, as shown in figure 10.Divest photoresist 202 then, as shown in figure 11.

Next, the method that continues the employing spin coating forms the overlayer 204 of the low-refraction of 10 micron thickness, as shown in figure 12.At last, piezoid is bonded on the overlayer 204 of low-refraction as lid 205, as shown in figure 13, the thickness of piezoid 205 is preferably 1.25 millimeters.

As mentioned above, under the situation that does not depart from spirit and scope of the invention, can also constitute many very embodiment of big difference that have.Should be appreciated that except as defined by the appended claims, the invention is not restricted at the instantiation described in the instructions.

Claims (3)

1. the manufacture method of a fiber waveguide device is characterized in that concrete steps comprise:

A quartz glass substrate is provided;

The deposit photoresist;

Photoetching forms figure;

Deposit one deck low-index material;

Deposit one deck high-index material;

Return and carve described high-index material of part and low-index material, described high-index material on the photoresist and low-index material removed and keep described high index of refraction layer material and low-index material in the groove that is deposited between the photoresist, to form high refractive index core and one deck low-index layer;

Divest photoresist;

The deposit low refractive index film.

2. the manufacture method of fiber waveguide device according to claim 1 is characterized in that, the thickness range of described photoresist is the 0.5-12 micron.

3. the manufacture method of fiber waveguide device according to claim 1 is characterized in that, the thickness range of described high refractive index core is the 0.5-11 micron, and its width range is the 0.5-20 micron.

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