CN102107391B - Method for processing monocrystal silicon carbide wafer - Google Patents
Method for processing monocrystal silicon carbide wafer Download PDFInfo
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- CN102107391B CN102107391B CN200910243519.1A CN200910243519A CN102107391B CN 102107391 B CN102107391 B CN 102107391B CN 200910243519 A CN200910243519 A CN 200910243519A CN 102107391 B CN102107391 B CN 102107391B
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Abstract
The invention provides a method for obtaining the high-quality surface of monocrystal silicon carbide through mechanical grinding and chemical polishing. By adopting the method, point defects, linear defects and planar defects of the monocrystal silicon carbide surface can be removed through double-side grinding, single-side swinging arm type rough grinding, single-side swinging arm type fine grinding and single-side swinging arm type CMP (chemically mechanical polishing), and surface blemishes and damaged layers of a wafer can be eliminated to the utmost extent, so that the high-quality surface of a monocrystal silicon carbide wafer can be obtained.
Description
Technical field
The present invention relates to a kind of processing method of silicon carbide single-crystal surface, particularly relate to machining and the chemical treatment method on a kind of silicon carbide single crystal wafer surface.
Background technology
Monocrystalline silicon carbide, as wide bandgap semiconductor, has the features such as high heat conductance, high saturated electrons drift speed.Along with high speed, the growing needs of high frequency radio technology, wide band gap semiconducter more and more receives people's concern, this semiconductor devices can meet the unappeasable plurality of advantages of ordinary silicon base semiconductor, for example, can and more under rugged environment, work at more high power levels, higher temperature.In fact the metal semiconductor field effect transis of manufacturing on this basis and metal oxide semiconductor field effect tube etc. are all realized.Therefore obtaining high-quality silicon carbide substrates material seems more and more important.Here said high-quality, not only refers to the quality of crystal own, particularly importantly silicon carbide single-crystal surface quality.This is not only needs prepared by device, is also the needs of epitaxial growth film or body monocrystalline.In fact, epitaxial growth is very strong to the dependence of substrate, and defect very little on substrate also can be destroyed the periodicity of silicon carbide single-crystal surface, and spreads, expands on film, has a strong impact on film quality.Even during as seed crystal, the body monocrystal material growing out also can be subject to having a strong impact on of substrate defects, and all defect on substrate surface generally can be by slavish copying in new epitaxial material.This class defect not only can cause leaky, also can significantly reduce electron mobility.
In order to obtain high-quality film and body monocrystalline, be just necessary first to remove the damage layer of SiC single-crystal surface.Existing chemical corrosion method mainly comprises: wet corrosion method, oxidizing process, anodic attack method and surface plasma etch etc.Wherein wet corrosion method also claims molten-salt growth method, is the salt that utilizes melting, the method for corroding such as potassium hydroxide (KOH) etc., and this class methods reaction speed is very fast, simple, but is difficult to control corrosion rate and the degree of depth.
Anodic attack is a kind of electrochemical etching method, and using sample as anode, corrosion efficiency is very low, is difficult to meet industrial needs, and product quality is difficult to control, and the silicon carbide after general processing is of low quality.In addition, oxidizing process can cause the reallocation of defect accumulation and impurity increase and doped chemical etc., is a very complicated process.
It is worth mentioning that surface plasma etch, the method is utilized plasma bombardment silicon carbide, removes the damage layer forming in process of lapping, and this method clearance is very high, but tends to introduce new defect and damage when removing damage layer.
Above method and research, all do not have system and study all sidedly the method that crystal is processed, and basically, be not effectively to solve the method that high-quality carborundum is produced.Reason is, these methods have all only been noticed solution crystal processing later stage surface-treated in a certain respect, and ignore, maybe cannot take into account other side, for example, when removing damage layer, cannot avoid introducing new damage; When controlling crystal thickness, cannot take into account the surface quality of crystal etc.
Summary of the invention
The present invention be intended to propose a kind of complete, systematically process the method on silicon carbide single crystal wafer surface.According to this method, can effectively obtain high quality silicon carbide wafers, and technique is simply efficient, wafer surface cut total length is not more than wafer radius, and wafer surface roughness (RMS) is less than 0.5 nanometer.
Processing method of the present invention can be controlled the singular point in carborundum comprehensively, and so-called singular point mainly refers to surperficial projection or pit.The method of controlling by multistep, can gradually reduce density and the quantity of silicon carbide wafer surface singular point.This is the control method of point defect.
By progressively adjusting, strengthen removal amount, can remove fast surface scratch, this is the control method of line defect.
By progressively adjusting, strengthen removal amount, and chemical polishing step by step, can successive elimination damage layer; Also can proofread and correct grinding technics, the planar defects such as the brilliant and inclined-plane of successive elimination.
By repeatedly proofreading and correct and optimizing, can change the defect such as warpage, distortion of wafer.
Especially, by unique glossing, can obtain high-quality wafer surface, this comprises surperficial no marking and damage layer, the surface roughness that surface has had.
The present invention has systematically discussed the efficient and controllable method of silicon carbide wafer Surface Machining, the silicon carbide single crystal wafer surface obtaining by mechanical lapping and chemical polishing has been eliminated blemish and damage layer to greatest extent, mainly comprise four steps: twin grinding, one side swing arm corase grind, one side swing arm fine grinding, the chemically mechanical polishing of one side swing arm etc., specifically comprise the steps:
(1) single-crystal silicon carbide crystal is carried out to line cutting, cut into silicon carbide single crystal wafer, the Thickness Ratio finished product required thickness of described wafer has more certain allowance, standby after Chemical cleaning;
(2) silicon carbide single crystal wafer after cleaning is carried out to twin grinding, the wafer surface stria that main removal is caused by line cutting is to obtain good flatness; Remove 2/3rds allowance;
(3) silicon carbide single crystal wafer after twin grinding is carried out to one side swing arm corase grind, adopt suitable rotating speed, regulate pressure, the main certain thickness of removing makes wafer meet thickness requirement, improve the surface roughness after twin grinding processing, to obtain good surface roughness, facilitate following process; Silicon carbide single crystal wafer thickness after corase grind approaches finished product required thickness;
(4) the above-mentioned wafer that approaches finished product required thickness is carried out to one side swing arm fine grinding, adopt suitable rotating speed, regulate pressure, the silicon carbide single crystal wafer surface scratch total length after fine grinding is no more than silicon carbide single crystal wafer radius, and the degree of depth is less than 5 nanometers;
(5) silicon carbide single crystal wafer after above-mentioned fine grinding is carried out to the chemically mechanical polishing of one side swing arm, silicon carbide single crystal wafer surface scratch total length after chemically mechanical polishing is not more than silicon carbide single crystal wafer radius, and wafer surface roughness (RMS) is less than 0.5 nanometer;
(6) encapsulation after cleaning of the silicon carbide single crystal wafer after polishing.
Wherein said allowance refers to silicon carbide single crystal wafer removed thickness in mechanical lapping and chemical polishing process, and according to the requirement of different machining accuracies and thickness, allowance is 20-200 micron.
Wherein said cleaning is the large granular impurity of removing silicon carbide single crystal wafer adsorption, and these impurity affect the quality on silicon carbide single crystal wafer surface in twin grinding process, or cause unnecessary scuffing etc.
Wherein said twin grinding, refers to that silicon carbide single crystal wafer is positioned between upper-lower grinding disk for two-side lapping machine, and silicon carbide single crystal wafer upper surface and lower surface are ground simultaneously.Twin grinding adopts that lower lap speed is per minute to be less than 100 and to turn, and grinding pressure adopts one of following three kinds of established standardses or is used in combination according to different processing requests:
(a) gently press technology, refer to that every 2 inch silicon carbide single-crystal wafers bear the pressure that is less than 1 kilogram;
(b) pressure technology in, refers to that pressure that every 2 inch silicon carbide single-crystal wafers bear is between 1-3 kilogram;
(c) technostress, refers to that the pressure that every 2 inch silicon carbide single-crystal wafers bear is greater than 3 kilograms.
The granularity of the diamond abrasive that twin grinding adopts is 2-4 micron, and the liquid diamond abrasive configuring is supplied in the mode of continuous flow liquid, and liquid supply speed is per minute is greater than 20 milliliters.
In wherein said one side swing arm corase grind, silicon carbide wafer is used bonding agent to be bonded on ceramic disk, ceramic disk is arranged on mechanical lapping arm, when ceramic disk rotates on lower abrasive disk, also can under mechanical lapping arm swing, on lower abrasive disk, move horizontally, to reduce the silicon carbide single crystal wafer surface removal amount unbalance causing when ceramic disk rotates merely: because the rotational line speed away from silicon carbide single crystal wafer center is fast, cause this to locate surperficial removal amount large, the rotational line speed that approaches silicon carbide single crystal wafer center is little, cause this to locate surperficial removal amount little, thereby make the silicon carbide single crystal wafer surface plane that departs from objectives become inclined-plane.Adopt that lower lap speed is per minute to be less than 200 and to turn, pressure during corase grind adopts one of following two kinds of established standardses or is used in combination according to different processing request:
(a) gently press technology, refer to that every 2 inch silicon carbide single-crystal wafers bear the pressure that is not more than 3 kilograms;
(b) technostress, refers to that every 2 inch silicon carbide single-crystal wafers bear the pressure that is greater than 3 kilograms.
Milling time while adopting light pressure technology is more than 1 hour; Milling time while adopting technostress is more than 1 hour.Diamond abrasive is interrupted supply with Sprayable, on average every 3-10, supplies once second, and supply duration is more than 1 second, and feeding speed is per second is less than 5 milliliters, and diamond abrasive granularity is below 1 micron.
Wherein said one side swing arm fine grinding refers to, silicon carbide single crystal wafer is used bonding agent to be bonded on ceramic disk, ceramic disk is arranged on mechanical lapping arm, when ceramic disk rotates on lower abrasive disk, also can under mechanical lapping arm swing, on lower abrasive disk, move horizontally, to reduce the silicon carbide single crystal wafer surface removal amount unbalance causing when ceramic disk rotates merely, because the rotational line speed away from silicon carbide single crystal wafer center is fast, cause this to locate surperficial removal amount large, the rotational line speed that approaches silicon carbide single crystal wafer center is little, cause this to locate surperficial removal amount little, thereby make the silicon carbide single crystal wafer surface plane that departs from objectives become inclined-plane.Adopt lower lap speed 10-20 per minute to turn, pressure during fine grinding adopts one of following two kinds of established standardses or is used in combination according to different processing request:
(a) gently press technology, refer to that every 2 inch silicon carbide wafers bear the pressure that is not more than 3 kilograms;
(b) technostress, refers to that every 2 inch silicon carbide wafers bear the pressure that is greater than 3 kilograms.
Milling time while adopting light pressure technology is more than 1 hour; Milling time while adopting technostress is more than 1 hour.Diamond abrasive is interrupted supply with Sprayable, on average every 3-7, supplies once second, and supply duration is more than 1 second, and feeding speed is per second is less than 5 milliliters, and diamond abrasive granularity is less than 0.5 micron.
Wherein the chemically mechanical polishing of one side swing arm refers to, silicon carbide single crystal wafer is used bonding agent to be bonded on ceramic disk, ceramic disk is arranged on mechanical lapping arm, when ceramic disk rotates on lower abrasive disk, also can under mechanical lapping arm swing, on lower abrasive disk, move horizontally.Adopting lower lap speed is that 10-300 per minute turns; Different according to processing request, select different pressures, the pressure that every 2 inch silicon carbide single-crystal wafer bear is 3-10 kilogram.The heating of employing infrared lamp, steady temperature is limited within the scope of 10-100 ℃.Drip discontinuously hydrogen peroxide and come oxide etch silicon carbide single crystal wafer surface, on average every 2 minutes, drip once above, each dripping quantity is less than 20 milliliters.Polish abrasive is silica, and particle mean size (D50) is 10-100 nanometer, in flow liquid mode, adds, and flow liquid addition per minute is less than 200 milliliters, and polishing time is more than 4 hours according to requirement on machining accuracy.After the chemically mechanical polishing of one side swing arm completes, silicon carbide single crystal wafer surface damage layer remove completely or thickness little of being not enough to damage epitaxial growth film and body monocrystalline quality.
Accompanying drawing explanation
Nitrating 6H-SiC surface optical photo after the cutting of Fig. 1 line;
Fig. 2 is the surface topography after nitrating 4H-SiC (0001) silicon face polishing in embodiment 1;
Fig. 3 is the surface topography after nitrating 6H-SiC (0001) silicon face polishing in embodiment 2;
Fig. 4 is the surface topography after semi-insulating 6H-SiC (0001) silicon face polishing in embodiment 3.
The specific embodiment
Below by embodiment, further describe the present invention, but actual attainable technique is not limited to these embodiment.
Embodiment 1:
Step 1: 2 inches of nitrating 4H-SiC single-crystal wafers that line taking is cut, with SL-2 type cleaning agent, in 50Hz ultrasonic wave, ultrasonic cleaning 10 minutes, then in 50Hz ultrasonic wave, with absolute ethyl alcohol ultrasonic cleaning 10 minutes, stand-by.
Step 2: get cleaned wafer, put into twin grinder, regulate pressure, grinding pressure adopts every 1 kilogram of light pressure successively, every 2 kilograms of middle pressures, and every 3 kilograms of weight also regulate each section of corresponding grinding revolution of pressure, regulating lower lap speed is per minute 20 to turn, regulating for grinding flow velocity is 30 milliliters per minute, starts, for lapping liquid, to process.After machining, removal amount is 15 microns, takes off wafer and with alcohol, in ultrasonic wave, cleans ultrasonic 10 minutes, stand-by.
Step 3: get the wafer after twin grinding, use bonding agent to be bonded on the ceramic disk of one side swing arm kibbling mill, regulating lower lap speed is per minute 50 to turn, adjusting adds diamond corase grind liquid for roughly grinding liquid 1 second at interval of spray in 3 seconds, and spouting liquid is 10 milliliters per minute, regulates pressure, every adds 4.5 kilograms of weight and grinds 2 hours, every adds 2.5 kilograms light pressure grindings 2 hours again, takes off wafer and with clear water, in ultrasonic wave, clean ultrasonic 5 minutes after machining, stand-by.
Step 4: the wafer after one side swing arm corase grind is put into one side swing arm refiner, wafer is used bonding agent to be bonded on ceramic disk, regulating lower lap speed is per minute 10 to turn, it is to spray fine grinding fluid 1 second at interval of 3 seconds that adjusting adds diamond fine grinding fluid, and spouting liquid is 10 milliliters per minute, regulates pressure, every adds 4.5 kilograms of weight and grinds 3 hours, every adds 2.5 kilograms light pressure grindings 3 hours again, takes off wafer and with clear water, in ultrasonic wave, clean ultrasonic 5 minutes after machining, stand-by.
Step 5: get the wafer after one side swing arm fine grinding, in Wan Ji toilet, put into one side swing arm polishing machine, wafer is used bonding agent to be bonded on ceramic disk, regulating lower lap speed is per minute 10 to turn, it is 50 milliliters per minute that adjusting adds polishing fluid flow velocity, regulate pressure, adopting infrared lamp heat regulation processing temperature constant is 100 ℃, every adds 6 kilograms of weight polishings 12 hours, on average every 2 minutes, drip a hydrogen peroxide and come oxide etch silicon carbide single crystal wafer surface, each dripping quantity is 10 milliliters.After machining, take off wafer and with pure water, in ultrasonic wave, clean ultrasonic 5 minutes, to be cleaned.
Step 6: get in the wafer ，Bai Ji toilet after machining and clean encapsulation.
As shown in Figure 2,2 inches of SiC wafers after machining, wafer thickness can be accurately in required thickness ± 15 micron, monolithic TTV is less than 15 microns, monolithic BOW is less than 20 microns, monolithic Warp is less than 15 microns, and surface appearance can reach observes cut total length wafer radius under 50 power microscopes, and roughness can reach RMS < 0.5 nanometer.
Embodiment 2:
Step 1: 2 inches of 6 H-SiC Crystal Doped by Nitrogen wafers that line taking is cut, with SL-2 type cleaning agent, in 50Hz ultrasonic wave, ultrasonic cleaning 10 minutes, then in 50Hz ultrasonic wave, with absolute ethyl alcohol ultrasonic cleaning 10 minutes, stand-by.
Step 2: get cleaned wafer, put into twin grinder, regulate pressure, grinding pressure adopts every 1 kilogram of light pressure successively, every 2 kilograms of middle pressures, and every 3 kilograms of weight also regulate each section of corresponding grinding revolution of pressure, regulating lower lap speed is per minute 90 to turn, regulating for grinding flow velocity is 100 milliliters per minute, starts, for lapping liquid, to process.After machining, removal amount is 140 microns, takes off wafer and with alcohol, in ultrasonic wave, cleans ultrasonic 10 minutes, stand-by.
Step 3: get the wafer after twin grinding, use bonding agent to be bonded on the ceramic disk of one side swing arm kibbling mill, regulating lower lap speed is per minute 180 to turn, adjusting adds diamond corase grind liquid for roughly grinding liquid 3 seconds at interval of spray in 3 seconds, and spouting liquid is 100 milliliters per minute, regulates pressure, every adds 4.5 kilograms of weight and grinds 1 hour, every adds 2.5 kilograms light pressure grindings 1 hour again, takes off wafer and with clear water, in ultrasonic wave, clean ultrasonic 5 minutes after machining, stand-by.
Step 4: the wafer after one side swing arm corase grind is put into one side swing arm refiner, wafer is used bonding agent to be bonded on ceramic disk, regulating lower lap speed is per minute 200 to turn, it is to spray fine grinding fluid 3 seconds at interval of 3 seconds that adjusting adds diamond fine grinding fluid, and spouting liquid is 100 milliliters per minute, regulates pressure, every adds 4.5 kilograms of weight and grinds 1 hour, every adds 2.5 kilograms light pressure grindings 1 hour again, takes off wafer and with clear water, in ultrasonic wave, clean ultrasonic 5 minutes after machining, stand-by.
Step 5: get the wafer after one side swing arm fine grinding, in Wan Ji toilet, put into one side swing arm polishing machine, wafer is used bonding agent to be bonded on ceramic disk, regulating lower lap speed is per minute 300 to turn, it is 150 milliliters per minute that adjusting adds polishing fluid flow velocity, regulate pressure, adopting infrared lamp heat regulation processing temperature constant is 80 ℃, every adds 8 kilograms of weight polishings 4 hours, on average every 2 minutes, drip a hydrogen peroxide and come oxide etch silicon carbide single crystal wafer surface, each dripping quantity is 15 milliliters.After machining, take off wafer and with pure water, in ultrasonic wave, clean ultrasonic 5 minutes, to be cleaned.
Step 6: get in the wafer ，Bai Ji toilet after machining and clean encapsulation.
As shown in Figure 3,2 inches of 6H-SiC wafers after machining, wafer thickness can be accurately in required thickness ± 5 micron, monolithic TTV is less than 15 microns, monolithic BOW is less than 20 microns, monolithic Warp is less than 13 microns, and surface appearance can reach observes cut total length be less than wafer radius under 50 power microscopes, and roughness can reach RMS < 0.5 nanometer
Embodiment 3:
Step 1: 2 inches of semi-insulating 6H-SiC single-crystal wafers that line taking is cut, with SL-2 type cleaning agent, in 50Hz ultrasonic wave, ultrasonic cleaning 10 minutes, then in 50Hz ultrasonic wave, with absolute ethyl alcohol ultrasonic cleaning 10 minutes, stand-by.
Step 2: get cleaned wafer, put into twin grinder, regulate pressure, grinding pressure adopts every 1 kilogram of light pressure successively, every 2 kilograms of middle pressures, and every 3 kilograms of weight also regulate each section of corresponding grinding revolution of pressure, regulating lower lap speed is per minute 50 to turn, regulating for grinding flow velocity is 60 milliliters per minute, starts, for lapping liquid, to process.After machining, removal amount is 45 microns, takes off wafer and with alcohol, in ultrasonic wave, cleans ultrasonic 10 minutes, stand-by.
Step 3: get the wafer after twin grinding, use bonding agent to be bonded on the ceramic disk of one side swing arm kibbling mill, regulating lower lap speed is per minute 90 to turn, adjusting adds diamond corase grind liquid for roughly grinding liquid 2 seconds at interval of spray in 3 seconds, and spouting liquid is 40 milliliters per minute, regulates pressure, every adds 4.5 kilograms of weight and grinds 1.5 hours, every adds 2.5 kilograms light pressure grindings 1.5 hours again, takes off wafer and with clear water, in ultrasonic wave, clean ultrasonic 5 minutes after machining, stand-by.
Step 4: the wafer after one side swing arm corase grind is put into one side swing arm refiner, wafer is used bonding agent to be bonded on ceramic disk, regulating lower lap speed is per minute 90 to turn, it is to spray fine grinding fluid 2 seconds at interval of 3 seconds that adjusting adds diamond fine grinding fluid, and spouting liquid is 60 milliliters per minute, regulates pressure, every adds 4.5 kilograms of weight and grinds 2 hours, every adds 2.5 kilograms light pressure grindings 2 hours again, takes off wafer and with clear water, in ultrasonic wave, clean ultrasonic 5 minutes after machining, stand-by.
Step 5: get the wafer after one side swing arm fine grinding, in Wan Ji toilet, put into one side swing arm polishing machine, wafer is used bonding agent to be bonded on ceramic disk, regulating lower lap speed is per minute 80 to turn, it is 80 milliliters per minute that adjusting adds polishing fluid flow velocity, regulate pressure, adopting infrared lamp heat regulation processing temperature constant is 70 ℃, every adds 7 kilograms of weight polishings 8 hours, on average every 2 minutes, drip a hydrogen peroxide and come oxide etch silicon carbide single crystal wafer surface, each dripping quantity is 12 milliliters.After machining, take off wafer and with pure water, in ultrasonic wave, clean ultrasonic 5 minutes, to be cleaned.
Step 6: get in the wafer ，Bai Ji toilet after machining and clean encapsulation.
As shown in Figure 4,2 inches of semi-insulating 6H-SiC wafers after machining, wafer thickness can be accurately in required thickness ± 10 micron, monolithic TTV is less than 15 microns, monolithic BOW is less than 15 microns, monolithic Warp is less than 15 microns, and surface appearance can reach observes cut total length be less than wafer radius under 50 power microscopes, and roughness can reach RMS < 0.5 nanometer.
Just the present invention is described in detail to be noted that the above-mentioned specific embodiment, and it should not be limitation of the present invention.For person skilled in the art, when not departing from the aim of claim and scope, can there is the variation of various ways and details.
Claims (15)
1. a processing method for silicon carbide single crystal wafer, the silicon carbide single crystal wafer surface that the method obtains by mechanical lapping and chemical polishing has been eliminated blemish and damage layer to greatest extent, it is characterized in that the method comprises the steps:
(1) first single-crystal silicon carbide crystal-cut is become to silicon carbide single crystal wafer, the Thickness Ratio finished product required thickness of described wafer has more certain allowance, and cleans;
(2) silicon carbide single crystal wafer after cleaning is carried out to twin grinding, to remove approximately 2/3rds allowance; Described twin grinding adopts that lower lap speed is per minute to be less than 100 and to turn, and grinding pressure adopts one of following three kinds of established standardses or is used in combination according to different processing requests:
(a) gently press technology, refer to that every 2 inch silicon carbide single-crystal wafers bear the pressure that is less than 1 kilogram;
(b) pressure technology in, refers to that pressure that every 2 inch silicon carbide single-crystal wafers bear is between 1-3 kilogram;
(c) technostress, refers to that the pressure that every 2 inch silicon carbide single-crystal wafers bear is greater than 3 kilograms;
(3) silicon carbide single crystal wafer after twin grinding is carried out to one side swing arm corase grind, the silicon carbide single crystal wafer thickness after corase grind approaches finished product required thickness; Described one side swing arm corase grind adopts that lower lap speed is per minute to be less than 200 and to turn, and during corase grind, diamond abrasive is interrupted supply with Sprayable, on average every 3-10, supply once second, supply duration is more than 1 second, and feeding speed is per second is less than 5 milliliters, and diamond abrasive granularity is below 1 micron; The pressure that silicon carbide single crystal wafer bears adopts one of following two kinds of established standardses or is used in combination according to different processing request:
(a) gently press technology, refer to that every 2 inch silicon carbide single-crystal wafers bear the pressure that is not more than 3 kilograms;
(b) technostress, refers to that every 2 inch silicon carbide single-crystal wafers bear the pressure that is greater than 3 kilograms;
(4) the above-mentioned wafer that approaches finished product required thickness is carried out to one side swing arm fine grinding, during fine grinding, diamond abrasive is interrupted supply with Sprayable, on average every 3-7, supply once second, supply duration is more than 1 second, feeding speed is per second is less than 5 milliliters, and diamond abrasive granularity is below 0.5 micron; Silicon carbide single crystal wafer surface scratch total length after fine grinding is not more than silicon carbide single crystal wafer radius, and the degree of depth is less than 5 nanometers; Described one side swing arm fine grinding adopts lower lap speed 10-200 per minute to turn, and the pressure that during fine grinding, silicon carbide single crystal wafer bears adopts one of following two kinds of established standardses or is used in combination according to different processing request:
(a) gently press technology, refer to that every 2 inch silicon carbide single-crystal wafers bear the pressure that is not more than 3 kilograms;
(b) technostress, refers to that every 2 inch silicon carbide single-crystal wafers bear the pressure that is greater than 3 kilograms;
(5) silicon carbide single crystal wafer after above-mentioned fine grinding is carried out to the chemically mechanical polishing of one side swing arm, the silicon carbide single crystal wafer surface scratch total length after described polishing is not more than silicon carbide single crystal wafer radius, and wafer surface roughness RMS is less than 0.5 nanometer; In the chemically mechanical polishing of described one side swing arm, adopt lower lap speed per minute 10-300 to turn; Different according to processing request, select different pressures, the pressure that every 2 inch silicon carbide single-crystal wafer bear is 3-10 kilograms;
(6) by encapsulation after the silicon carbide single crystal wafer cleaning after above-mentioned polishing.
2. according to the method for claim 1, it is characterized in that, described allowance refers to silicon carbide single crystal wafer removed thickness in mechanical lapping and chemical polishing process, and according to the requirement of different machining accuracies and thickness, allowance is 20-200 micron.
3. according to the method for claim 1, it is characterized in that, the described cleaning of step (1) is the large granular impurity of removing silicon carbide single crystal wafer adsorption, and these impurity affect the quality on silicon carbide single crystal wafer surface in twin grinding process.
4. according to the method for claim 1, it is characterized in that, described twin grinding, refers to that silicon carbide single crystal wafer is positioned between upper-lower grinding disk for two-side lapping machine, and silicon carbide single crystal wafer upper surface and lower surface are ground simultaneously.
5. according to the method for claim 4, it is characterized in that, the granularity of the diamond abrasive that described twin grinding adopts is 2-4 micron, and the liquid diamond abrasive configuring is supplied in the mode of continuous flow liquid, and liquid supply speed is per minute is greater than 20 milliliters.
6. according to the method for claim 1, it is characterized in that, described one side swing arm corase grind refers to that silicon carbide single crystal wafer is used bonding agent to be bonded on ceramic disk, ceramic disk is arranged on mechanical lapping arm, when ceramic disk rotates on lower abrasive disk, also can under mechanical lapping arm swing, on lower abrasive disk, move horizontally, to reduce the silicon carbide single crystal wafer surface removal amount unbalance causing when ceramic disk rotates merely: because the rotational line speed away from silicon carbide single crystal wafer center is fast, cause this to locate surperficial removal amount large, the rotational line speed that approaches silicon carbide single crystal wafer center is little, cause this to locate surperficial removal amount little, thereby make the silicon carbide single crystal wafer surface plane that departs from objectives become inclined-plane.
7. according to the method for claim 1, it is characterized in that, in described one side swing arm corase grind, the milling time while adopting light pressure technology is more than 1 hour; Milling time while adopting technostress is more than 1 hour.
8. according to the method for claim 1, it is characterized in that, described one side swing arm fine grinding refers to that silicon carbide single crystal wafer is used bonding agent to be bonded on ceramic disk, ceramic disk is arranged on mechanical lapping arm, when ceramic disk rotates on lower abrasive disk, also can under mechanical lapping arm swing, on lower abrasive disk, move horizontally, to reduce the silicon carbide single crystal wafer surface removal amount unbalance causing when ceramic disk rotates merely: because the rotational line speed away from silicon carbide single crystal wafer center is fast, cause this to locate surperficial removal amount large, the rotational line speed that approaches silicon carbide single crystal wafer center is little, cause this to locate surperficial removal amount little, thereby make the silicon carbide single crystal wafer surface plane that departs from objectives become inclined-plane.
9. according to the method for claim 1, it is characterized in that, in described one side swing arm fine grinding, the milling time while adopting light pressure technology is more than 1 hour; Milling time while adopting technostress is more than 1 hour.
10. according to the method for claim 1, it is characterized in that, the chemically mechanical polishing of described one side swing arm refers to that silicon carbide single crystal wafer is used bonding agent to be bonded on ceramic disk, ceramic disk is arranged on mechanical lapping arm, when ceramic disk rotates on lower abrasive disk, also can under mechanical lapping arm swing, on lower abrasive disk, move horizontally.
11. according to the method for claim 1, it is characterized in that, in the chemically mechanical polishing of described one side swing arm, adopts infrared lamp heating, and steady temperature is limited within the scope of 10-100 ℃.
12. according to the method for claim 1, it is characterized in that, in the chemically mechanical polishing of described one side swing arm, drips discontinuously hydrogen peroxide and comes oxide etch silicon carbide single crystal wafer surface, on average every 2 minutes, drips once above, and each dripping quantity is less than 20 milliliters.
13. according to the method for claim 1, it is characterized in that, in the chemically mechanical polishing of described one side swing arm, polish abrasive is silica, and mean particle size D 50 is 10-100 nanometers, in flow liquid mode, adds, and flow liquid addition per minute is less than 200 milliliters.
14. according to the method for claim 1, it is characterized in that, in the chemically mechanical polishing of described one side swing arm, polishing time is more than 4 hours according to requirement on machining accuracy.
15. according to the method for claim 1, it is characterized in that, after the chemically mechanical polishing of described one side swing arm, silicon carbide single crystal wafer surface damage layer remove completely or thickness little of being not enough to damage epitaxial growth film and body monocrystalline quality.
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| US9018639B2 (en) | 2012-10-26 | 2015-04-28 | Dow Corning Corporation | Flat SiC semiconductor substrate |
| US9279192B2 (en) | 2014-07-29 | 2016-03-08 | Dow Corning Corporation | Method for manufacturing SiC wafer fit for integration with power device manufacturing technology |
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