CN102085520A - Normal-pressure dual-medium barrier flat-opening type active radical cleaning system - Google Patents
Normal-pressure dual-medium barrier flat-opening type active radical cleaning system Download PDFInfo
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- CN102085520A CN102085520A CN2009102496104A CN200910249610A CN102085520A CN 102085520 A CN102085520 A CN 102085520A CN 2009102496104 A CN2009102496104 A CN 2009102496104A CN 200910249610 A CN200910249610 A CN 200910249610A CN 102085520 A CN102085520 A CN 102085520A
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Abstract
The invention relates to a novel normal-pressure dual-medium barrier flat-opening type active radical cleaning system which comprises a high-voltage electrode, a medium barrier layer, a grounding electrode, a power supply, a mobile manipulator and an intake and exhaust system. The novel normal-pressure dual-medium obstruction flat-opening type active radical cleaning system is characterized in that the high-voltage electrode and the grounding electrode are respectively wrapped by using the medium barrier layer, discharge occurs in a gap between the high-voltage electrode and the grounding electrode at normal voltage to generate plasma, high-activity radicals generated by a discharge region are sprayed from a flat opening type nozzle under the drive of air flow with a certain pressure, and organic matters on the surface of an object are removed when the radicals are sprayed to the surface of the object to be treated. The active radicals generated in the invention can be used for removing photoresist on a silicon sheet without damage and cleaning the organic matters.
Description
Technical field
The present invention relates to a kind of novel flat shape of the mouth as one speaks living radical of normal pressure bi-medium to block purging system, especially refer to that this system is that high-field electrode and ground electrode are attached to respectively and are shaped as two L shaped dielectric barrier both sides, between these two dielectric barriers, be provided with a discharging gap, free radical is produced by discharging gap, and carry ejection by the air-flow of certain air pressure, form a flat high concentration active group line of willing mouthful, be used for photoresist on the silicon chip and organic matter are scanned cleaning.
Background technology
Along with the development of large scale integrated circuit, the improving constantly of integrated level, constantly the reducing of live width, also more and more higher to the requirement that the not damaged of silicon chip cleans.In silicon transistor and integrated circuit production, almost the per pass operation all has the problem that silicon chip cleans, the quality that silicon chip cleans seriously influences device performance, deal with improperly, whole silicon chips are scrapped, can not make pipe, perhaps produced device performance is inferior, and stability and reliability are very poor.Therefore silicon chip being carried out undamaged cleaning has great significance.
Commonly used at present removes photoresist and cleaning method, by wet method and dry method dual mode.There are many shortcomings in the wet-cleaning wet-cleaning: for example: (1) can not accurately be controlled; (2) cleaning is not thorough, needs to clean repeatedly; (3) introduce new impurity easily; (4) can not handle residue; (5) contaminated environment needs waste liquid is handled; (6) consume a large amount of acid and water.In the dry method cleaning of plasma, do not use any chemical solvent, therefore essentially no pollutant helps environmental protection.In addition, its production cost is lower, cleans to have good homogeneous and repeated, controllability, easily realizes producing in batches.But dry method commonly used is at present removed photoresist and cleaning equipment, be under vacuum state, use plasma that silicon chip surface is directly cleaned, ion in the plasma can cause very big damage to the etching lines of silicon chip surface like this, be not applicable to 32nm and following node technology, and, because its use is vacuum system, this will make that equipment cost is high, complex operation.
In recent years, people begin under atmospheric pressure to carry out experimental facilities and the technical study that photoresist cleans, but, currently used plasma generator, it all is the form that adopts radio frequency discharge, working gas can only be to adopt helium and oxygen, or the mist of argon and oxygen, and wherein the shared ratio of oxygen is less than 3%.Because a large amount of inert gases that adopt cause the application cost of working gas very high.
In addition, recently the medium barrier plasma generator that adopts of people generally is the plasma generator that adopts single dielectric impedance, and one of them electrode is to adopt metal electrode, cause electrode erosion easily after, bring the electrode fouling when cleaning.
The present invention has designed the normal pressure device of generation free radical down, is the plasma discharge form that adopts bi-medium to block, and two sparking electrodes are all coated by medium, can not bring the electrode erosion problem.The free radical line that is produced cleans, and can bring any damage hardly to the surface device of silicon chip.
Summary of the invention
A kind of novel flat shape of the mouth as one speaks living radical of normal pressure bi-medium to block purging system comprises housing, high-field electrode, dielectric barrier, earth electrode, power supply, mobile manipulator and an intake and exhaust system.The characteristic of this system is to be provided with a high-field electrode and ground electrode in a rectangular housing, be provided with two dielectric barriers between these two electrodes, between these two dielectric barriers, be provided with a discharging gap and produce plasma, under the air-flow of certain pressure drives, the high mars free radical that discharging gap produced is ejected by flat shape of the mouth as one speaks spout, when being ejected into the body surface that needs processing, remove the organic substance of body surface.The living radical that the present invention produces can be used for the silicon chip not damaged and removes photoresist and the organic matter cleaning.
The flat shape of the mouth as one speaks living radical of described normal pressure bi-medium to block purging system, its characteristic is: be provided with two dielectric barriers between high-field electrode and ground electrode, the shape of these two dielectric barriers all is L shaped, be provided with a discharging gap between these two dielectric barriers, the range scale in this gap is the 0.5-5 millimeter.
The flat shape of the mouth as one speaks living radical of described normal pressure bi-medium to block purging system, its characteristic is: an end of the discharging gap between two dielectric barriers connects by tracheae and air supply source, the other end forms a strip spout, is provided with the insulating materials sealing in the both sides of discharging gap.
The flat shape of the mouth as one speaks living radical of described normal pressure bi-medium to block purging system, its characteristic is: the obedient respectively both sides that overlay on two dielectric barriers of this high-field electrode and ground electrode, high-field electrode is connected with a high-frequency and high-voltage power supply, and ground electrode is connected with housing and connects the earth.
The flat shape of the mouth as one speaks living radical of described normal pressure bi-medium to block purging system, its characteristic is: the output P-to-P voltage value of this high-frequency and high-voltage power supply is greater than 3000 volts.
The flat shape of the mouth as one speaks living radical of described normal pressure bi-medium to block purging system, its characteristic is: the gas that region of discharge adopted is the argon oxygen gas mixture, also can is oxygen or clean air that the flow of gas is greater than 5 liters/minute.
The flat shape of the mouth as one speaks living radical of described normal pressure bi-medium to block purging system, its characteristic is: this free-radical generator system can realize three-dimensional moving by manipulator control.
The flat shape of the mouth as one speaks living radical of described normal pressure bi-medium to block purging system, its characteristic is: this system is provided with hood and discharge duct, makes remaining free radical line and discharges with the reacted product of organic matter.
The flat shape of the mouth as one speaks living radical of described normal pressure bi-medium to block purging system, its characteristic is: this silicon chip substrate has heater, and when cleaning, the temperature of silicon chip can be heated in 200 ℃.
The flat shape of the mouth as one speaks living radical of normal pressure bi-medium to block of the present invention purging system, its advantage is: 1, adopt the discharge of bi-medium to block form, the discharge that can produce accurate aura under normal pressure more helps producing the plasma of high number of free radical.2, caused electrode erosion does not pollute in the time of can not bringing the metal electrode discharge.3, adopt the high frequency electric source discharge, cheap with the radio-frequency power supply comparative price of equal-wattage.4, employing can have the robot device of three degree of freedom, can scan uniformly 8 inches and above silicon chip surface to remove photoresist and clean.5, this system does not need to vacuumize, and has improved production efficiency, lower production cost.
Main application of the present invention is to be used in the integrated circuit fabrication process, when single silicon chip is cleaned, and photoresist on the cleaning silicon chip and organic pollution.In addition, it also can be used for the organic matter of other physical surface is cleaned.
Figure of description
Fig. 1 Facad structure cross-sectional schematic of the present invention.
Fig. 2 plasma generator vertical view cutaway drawing of the present invention.
See also Fig. 1 Fig. 2, the flat shape of the mouth as one speaks living radical of normal pressure bi-medium to block of the present invention purging system comprises a housing 100, high-field electrode 101, dielectric barrier 105, earth electrode 104, power supply 103, manipulator support 205, mobile manipulator 204, air supply source 102, hood 110, silicon chip 202, heater 203 etc.
Be provided with a high-field electrode 101 and a ground electrode 104 in the plasma generator housing 100, between these two electrodes, be provided with two dielectric barriers 105, between these two dielectric barriers 105, be provided with a discharging gap 107 and produce plasma, under the air-flow of certain pressure drove, the high mars free radical that discharging gap 107 is produced was ejected by flat shape of the mouth as one speaks spout 109.
The clean gas that air supply source 102 provides enters into the space 107 of plasma generator by inlet channel 112, the ionization that is stimulated produces plasma and free radical, this plasma is combined into the free radical line through collision after leaving region of discharge, and be ejected into certain speed on the photoresist 201 on silicon chip 202 surfaces, react formation C with photoresist
2O and H
2Byproducts of reaction such as O, and by hood 110 and 108 discharges of connected discharge duct.
Power supply 103 adopts high-frequency and high-voltage power supply to excite discharge, and the peak-to-peak voltage during discharge is greater than 3000 volts, and discharge is to carry out under normal pressure.Can control the free radical line of ejection by control power and gas flow.
In cleaning process, the temperature of silicon chip 202 is to be heated in 200 ℃ the scope by heater 203.Temperature by heating silicon chip 202 can improve the reaction cleaning speed.
Consult Fig. 1 and Fig. 2, high-field electrode 101 and ground electrode 104 are plate, the dielectric impedance material 105 of L type is to be coated on a relative side of two electrodes and the end of spout respectively, adopt insulating materials 106 fixed electrodes, dielectric and housing, and isolate the gap 107 that two dielectric impedance materials form discharge in the both sides of electrode, spout be shaped as the flat degree of lip-rounding.
Plasma generator housing 100, manipulator 204, manipulator sliding bar 206 and support 205, and high-field electrode 101 and earth electrode 104 are to adopt the metallic conduction material to make; Insulation connect material 106 be by poly-PTFE make, dielectric barrier 105 is to be made by quartz material; Discharge duct 125 and hood 126 are to be made by organic material.
Invention has been described in conjunction with specific embodiments with reference to the accompanying drawings above, yet, need to prove, for a person skilled in the art, under the situation that does not break away from the spirit and scope of the present invention, can make many changes and modification to the foregoing description, these changes and modification all drop in the claim restricted portion of the present invention.
Claims (9)
1. the novel flat shape of the mouth as one speaks living radical of a normal pressure bi-medium to block purging system comprises housing, high-field electrode, dielectric barrier, earth electrode, power supply, mobile manipulator and an intake and exhaust system.The characteristic of this system is to be provided with a high-field electrode and ground electrode in a rectangular housing, be provided with two dielectric barriers between these two electrodes, between these two dielectric barriers, be provided with a discharging gap and produce plasma, under the air-flow of certain pressure drives, the high mars free radical that discharging gap produced is ejected by flat shape of the mouth as one speaks spout, when being ejected into the body surface that needs processing, remove the organic substance of body surface.The living radical that the present invention produces can be used for the silicon chip not damaged and removes photoresist and the organic matter cleaning.
2. as the flat shape of the mouth as one speaks living radical of right 1 described normal pressure bi-medium to block purging system, its characteristic is: be provided with two dielectric barriers between high-field electrode and ground electrode, the shape of these two dielectric barriers all is L shaped, be provided with a discharging gap between these two dielectric barriers, the range scale in this gap is the 0.5-5 millimeter.
3. as the flat shape of the mouth as one speaks living radical of right 1 described normal pressure bi-medium to block purging system, its characteristic is: an end of the discharging gap between two dielectric barriers connects by tracheae and air supply source, the other end forms a strip spout, is provided with the insulating materials sealing in the both sides of discharging gap.
4. as the flat shape of the mouth as one speaks living radical of right 1 described normal pressure bi-medium to block purging system, its characteristic is: the obedient respectively both sides that overlay on two dielectric barriers of this high-field electrode and ground electrode, high-field electrode is connected with a high-frequency and high-voltage power supply, and ground electrode is connected with housing and connects the earth.
5. as the flat shape of the mouth as one speaks living radical of right 1 described normal pressure bi-medium to block purging system, its characteristic is: the output P-to-P voltage value of this high-frequency and high-voltage power supply is greater than 3000 volts.
6. as the flat shape of the mouth as one speaks living radical of right 1 described normal pressure bi-medium to block purging system, its characteristic is: the gas that region of discharge adopted is the argon oxygen gas mixture, also can is oxygen or clean air that the flow of gas is greater than 5 liters/minute.
7. as the flat shape of the mouth as one speaks living radical of right 1 described normal pressure bi-medium to block purging system, its characteristic is: this free-radical generator system can realize three-dimensional moving by manipulator control.
8. as the flat shape of the mouth as one speaks living radical of right 1 described normal pressure bi-medium to block purging system, its characteristic is: this system is provided with hood and discharge duct, makes remaining free radical line and discharges with the reacted product of organic matter.
9. as the flat shape of the mouth as one speaks living radical of right 1 described normal pressure bi-medium to block purging system, its characteristic is: this silicon chip substrate has heater, and when cleaning, the temperature of silicon chip can be heated in 200 ℃.
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| CN2009102496104A CN102085520A (en) | 2009-12-04 | 2009-12-04 | Normal-pressure dual-medium barrier flat-opening type active radical cleaning system |
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| CN2009102496104A CN102085520A (en) | 2009-12-04 | 2009-12-04 | Normal-pressure dual-medium barrier flat-opening type active radical cleaning system |
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Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102896115A (en) * | 2011-07-26 | 2013-01-30 | 中国科学院微电子研究所 | Novel normal-pressure medium barrier type active free radical cleaning equipment |
| CN102896114A (en) * | 2011-07-26 | 2013-01-30 | 中国科学院微电子研究所 | Novel flat-mouth type equipment for cleaning by atmospheric-pressure double-dielectric barrier active radicals |
| CN102896113A (en) * | 2011-07-26 | 2013-01-30 | 中国科学院微电子研究所 | Novel spray gun for cleaning by double-dielectric barrier atmospheric-pressure plasma free radicals |
| CN102921676A (en) * | 2011-08-10 | 2013-02-13 | 中国科学院微电子研究所 | Novel atmospheric plasma free radical cleaning spray gun with exhaust function |
| CN102921675A (en) * | 2011-08-10 | 2013-02-13 | 中国科学院微电子研究所 | Novel atmospheric cleaning spray gun capable of discharging large-area plasma free radicals |
| CN103168682A (en) * | 2013-01-18 | 2013-06-26 | 广东石油化工学院 | Sealed high-field dielectric barrier discharge (DBD) radiometer |
| WO2013149482A1 (en) * | 2012-04-05 | 2013-10-10 | 中国科学院微电子研究所 | New normal-pressure dual radio frequency electrode plasma free radical cleaning spray gun |
| WO2013149481A1 (en) * | 2012-04-05 | 2013-10-10 | 中国科学院微电子研究所 | Atmospheric-pressure plasma free radical cleaning system |
| CN103813608A (en) * | 2013-04-16 | 2014-05-21 | 杜志刚 | Plasma high pressure gas heating method |
| CN103813606A (en) * | 2013-04-16 | 2014-05-21 | 杜志刚 | Plasma high pressure gas heating device |
| CN103813609A (en) * | 2013-04-16 | 2014-05-21 | 杜志刚 | Plasma carbon dioxide high pressure gas heating device method |
| CN103813607A (en) * | 2013-04-16 | 2014-05-21 | 杜志刚 | Plasma carbon dioxide high pressure gas heating device |
| CN103889138A (en) * | 2012-12-24 | 2014-06-25 | 中国科学院微电子研究所 | Plasma discharge device |
| CN106783711A (en) * | 2016-12-31 | 2017-05-31 | 合肥优亿科机电科技有限公司 | Plasma clean photovoltaic silicon wafer organic dirt equipment |
| CN108905545A (en) * | 2018-09-11 | 2018-11-30 | 北京振戎融通通信技术有限公司 | Can automatic cleansing medium barrier discharge pipe low temperature plasma exhaust treatment component |
| CN111617716A (en) * | 2020-06-09 | 2020-09-04 | 常州大学 | Metal honeycomb type plasma discharge reactor |
| CN114040560A (en) * | 2021-11-19 | 2022-02-11 | 国网重庆市电力公司电力科学研究院 | Rotatable formula plasma efflux generating device |
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Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102896114A (en) * | 2011-07-26 | 2013-01-30 | 中国科学院微电子研究所 | Novel flat-mouth type equipment for cleaning by atmospheric-pressure double-dielectric barrier active radicals |
| CN102896113A (en) * | 2011-07-26 | 2013-01-30 | 中国科学院微电子研究所 | Novel spray gun for cleaning by double-dielectric barrier atmospheric-pressure plasma free radicals |
| CN102896115A (en) * | 2011-07-26 | 2013-01-30 | 中国科学院微电子研究所 | Novel normal-pressure medium barrier type active free radical cleaning equipment |
| CN102921676A (en) * | 2011-08-10 | 2013-02-13 | 中国科学院微电子研究所 | Novel atmospheric plasma free radical cleaning spray gun with exhaust function |
| CN102921675A (en) * | 2011-08-10 | 2013-02-13 | 中国科学院微电子研究所 | Novel atmospheric cleaning spray gun capable of discharging large-area plasma free radicals |
| WO2013149481A1 (en) * | 2012-04-05 | 2013-10-10 | 中国科学院微电子研究所 | Atmospheric-pressure plasma free radical cleaning system |
| WO2013149482A1 (en) * | 2012-04-05 | 2013-10-10 | 中国科学院微电子研究所 | New normal-pressure dual radio frequency electrode plasma free radical cleaning spray gun |
| CN103889138A (en) * | 2012-12-24 | 2014-06-25 | 中国科学院微电子研究所 | Plasma discharge device |
| CN103889138B (en) * | 2012-12-24 | 2016-06-29 | 中国科学院微电子研究所 | Plasma discharge apparatus |
| CN103168682A (en) * | 2013-01-18 | 2013-06-26 | 广东石油化工学院 | Sealed high-field dielectric barrier discharge (DBD) radiometer |
| CN103813608A (en) * | 2013-04-16 | 2014-05-21 | 杜志刚 | Plasma high pressure gas heating method |
| CN103813606A (en) * | 2013-04-16 | 2014-05-21 | 杜志刚 | Plasma high pressure gas heating device |
| CN103813609A (en) * | 2013-04-16 | 2014-05-21 | 杜志刚 | Plasma carbon dioxide high pressure gas heating device method |
| CN103813607A (en) * | 2013-04-16 | 2014-05-21 | 杜志刚 | Plasma carbon dioxide high pressure gas heating device |
| CN106783711A (en) * | 2016-12-31 | 2017-05-31 | 合肥优亿科机电科技有限公司 | Plasma clean photovoltaic silicon wafer organic dirt equipment |
| CN108905545A (en) * | 2018-09-11 | 2018-11-30 | 北京振戎融通通信技术有限公司 | Can automatic cleansing medium barrier discharge pipe low temperature plasma exhaust treatment component |
| CN111617716A (en) * | 2020-06-09 | 2020-09-04 | 常州大学 | Metal honeycomb type plasma discharge reactor |
| CN114040560A (en) * | 2021-11-19 | 2022-02-11 | 国网重庆市电力公司电力科学研究院 | Rotatable formula plasma efflux generating device |
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Application publication date: 20110608 |