CN102082105B - Thermal wind sensor based on anodic bonding technology and preparation method thereof - Google Patents
Thermal wind sensor based on anodic bonding technology and preparation method thereof Download PDFInfo
- Publication number
- CN102082105B CN102082105B CN 201010573973 CN201010573973A CN102082105B CN 102082105 B CN102082105 B CN 102082105B CN 201010573973 CN201010573973 CN 201010573973 CN 201010573973 A CN201010573973 A CN 201010573973A CN 102082105 B CN102082105 B CN 102082105B
- Authority
- CN
- China
- Prior art keywords
- silicon
- oxide layer
- technology
- glass substrate
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Pressure Sensors (AREA)
Abstract
The invention discloses a wafer level package thermal wind sensor based on an anodic bonding technology which comprises the following steps: step 1, preparation of silicon chips, manufacturing a heating element, a thermal sensing temperature measuring element and an electric extraction pad by utilizing a standard CMOS (complementary metal-oxide-semiconductor transistor) technology, and etching off an oxide layer at the anodic bonding area at the front surface of the silicon chip by utilizing an MEMS (micro electro mechanical systems) dry etching technology, so that a silicon substrate is exposed; step 2, preparation of packaging glass substrate, preparing bosses for anodic bonding by utilizing an anodic bonding technology, and preparing a through hole for electric extraction by utilizing a laser etching technology; step 3, carrying out bonding packaging on the silicon chips and packaged glass substrate by utilizing the anodic bonding technology; step 4, carrying out thinning on the substrate of the silicon chips by utilizing a thinning technology; step 5, sticking and sealing a ceramic sensing substrate on the back face of the pair of thinned chips; and step 6, scribing and finishing the preparation of the sensor. In the whole preparation process of the sensor, the preparation technologies used are compatible with the standard CMOS technology; the postprocessing technology is simple; the frontage protection of the silicon chips for sensing is realized by the packaging anodic bonding technology; the ceramics are basically sticked and sealed to the back face of the thinned silicon chips, on the one hand, the ceramics serve as heat sensitive materials to sense the wind changes in the outside environment, and on the other hand, the ceramics are used for protecting the silicon chips. By the sensor, the wafer level packaging is realized, and the sensor has the characteristics of good compatibility, simple subsequent technology, and low cost.
Description
Technical field
The present invention relates to a kind of wafer level packaging hot type wind speed wind direction sensor that adopts the anode linkage technology to realize; Preparation technology and standard CMOS process are compatible, relate in particular to a kind of low-power consumption based on integrated anemograph of glass and ceramic packaging and preparation method thereof.
Background technology
In the design of CMOS integrated anemograph, encapsulation is the technical bottleneck that hinders its development all the time.Its encapsulating material promptly requires to have good heat-conductive characteristic on the one hand; Require that again transducer is had protective effect; And also need consider the influence of encapsulating material to aspects such as transducer sensitivity, reliability and prices in the design, this has just limited the degree of freedom of transducer self package design.On the other hand, thermal flow rate sensor requires the responsive part of transducer to be exposed in the measurement environment, requires treatment circuit and environment to isolate simultaneously again, in order to avoid influence the performance of treatment circuit, both have produced contradiction to the requirement of encapsulation.
The silicon wind speed wind direction sensor of report mostly was directly exposed to the sensing surface of silicon chip in the natural environment in the past, so that can change by the extraneous wind speed of perception.So, silicon chip is easy to receive various pollutions, causes the instability of its performance, even damages.If adopt the higher ceramic substrate of thermal conductivity; The mode of utilizing flip chip bonding encapsulation or heat-conducting glue to attach encapsulates the transducer silicon; Just can avoid above-mentioned contradiction preferably; But the heat overwhelming majority that encapsulation back transducer produces dissipates from silicon-based substrate with heat conducting mode, only has a very little part to carry out heat exchange through pottery and outside air, reduces the amplitude of output sensitive signal greatly; Power consumption through increasing transducer can improve the amplitude of sensitive signal, but causes the bigger power consumption of whole sensor system.
Summary of the invention
The structure and preparation method thereof that the purpose of this invention is to provide a kind of hot type wind speed wind direction sensor of the wafer level packaging that realizes based on anode linkage technology; Sensor designed structure and packing forms help when guaranteeing big sensitive signal amplitude, and sensing system has lower power consumption.
The present invention adopts following technical scheme:
A kind of hot type wind speed wind direction sensor based on anode linkage technology; Comprise the attenuate silicon; The back side of said attenuate silicon is connected with ceramic sensing substrate through heat-conducting glue; Front at the attenuate silicon is provided with oxide layer; Be provided with 4 polysilicon heating elements and 4 hot sensing temperature elements at the middle part of oxide layer, be provided with electricity at the fringe region of oxide layer and draw pad, 4 polysilicon heating elements and 4 hot sensing temperature elements are drawn pad through metal lead wire and electricity respectively and are connected; It is characterized in that; On oxide layer, be provided with the bonding that can expose the attenuate silicon and use cavity, on the attenuate silicon that bonding exposes in cavity bonding the packaged glass substrate is arranged and by the bonding that is located at the packaged glass substrate with boss and the attenuate silicon bonding that is exposed, be provided with at the packaged glass substrate and can make electricity draw electricity that pad exposes to draw and use through hole.
A kind of preparation method of the hot type wind speed wind direction sensor based on anode linkage technology is following:
The first step, the preparation of silicon
Step 2, preparation is as first polysilicon of an end of hot sensing temperature element, and as second polysilicon of polysilicon heating element on first thermal oxide layer;
Step 3; Chemical vapor deposition second oxide layer on first thermal oxide layer, first polysilicon and second polysilicon; And form oxide layer, and utilize etching technics to be prepared on first polysilicon and the polysilicon heating element top oxide layer to etch through hole by first thermal oxide layer and second oxide layer;
Step 5, the dry etching oxide layer makes bonding and uses cavity until exposing silicon substrate; Second step, the packaged glass substrate
Step 2 utilizes photoetching process and wet corrosion technique that the glass front surface is carried out selective corrosion at the glass substrate upper surface, prepares bonding and uses boss;
Step 3 is utilized laser ablation prepared electricity to draw at the glass substrate upper surface and is used through hole; The 3rd step, reprocessing
Step 2, silicon attenuate: utilize the silicon in the chip behind the reduction process para-linkage to carry out attenuate, accomplish the preparation of attenuate silicon;
Step 3, potsherd pastes envelope: the back side that ceramic sensing substrate is encapsulated in the attenuate silicon through the heat conduction sticker; In the 4th step, the making of transducer is accomplished in scribing.
The present invention utilizes CMOS technology on silica-based, to prepare heating element and hot sensing temperature element; Glass substrate and silicon front surface after utilizing graphically carry out packaging protection through anode linkage technology to the silicon front surface; And get rid of most silicon substrate through reduction process; Reduce the thermal capacity of chip; And in the sensitivity that improves chip, can reduce the sensor's response time, and utilize ceramic substrate that envelope is pasted through heat-conducting glue in the silicon back side, protection is realized at the silicon back side with certain thermal conductivity.The present invention sets up a temperature field through the heating element that is prepared in the silicon in silicon; And this temperature field is conducted in the ceramic substrate through heat-conducting glue; In ceramic substrate, set up identical temperature field; The ceramic chip exposed is in external environment; The temperature field that the variation of external environment apoplexy can influence in the ceramic substrate distributes, and the transmission through heat-conducting glue can distribute the temperature field that changes in the ceramic substrate and reach in the silicon, and measures this temperature field variation in temperature distribution situation through the hot sensing temperature element in the silicon.Under the calm condition in the external world, the distribution in temperature field presents the state of complete symmetry.When the external world has wind out-of-date from the ceramic chip upper surface blown; Wind will be taken away the heat of part with the mode of thermal convection from the ceramic chip upper surface; Hot sensing temperature element is measured the variation in this temperature field through silica-based with conduction of heat heat-conducting glue, and then can reflect the size of wind speed; The difference output of the hot sensing temperature element of upstream and downstream that is symmetrically distributed reflects the variation of ceramic chip upper surface temperature field temperature gradient, can reflect the change information of wind direction.
In sensor construction, seal the attenuate silicon that is used to protect lower floor to the ceramic sensing substrate at the attenuate silicon back side on the one hand through the heat conduction sticker, on the other hand again as the senser of variation of the extraneous wind of impression.Whole sensor has only the upper surface of ceramic sensing substrate and the environment of wind to contact, and other elements are all isolated through ceramic sensing substrate and external environment, therefore can avoid receiving the pollution of external environment.Utilize the front surface of packaged glass substrate and silicon to carry out anode linkage; Can protect and isolated heat conduction the front surface of silicon on the one hand to the packaged glass orientation substrate; Can with pasting in the ceramic sensing substrate process of envelope certain mechanical support be provided at the silicon thinning process on the other hand; Because the coefficient of heat conduction of glass is very little; Therefore silicon is because the thermal loss that heat-conduction effect causes will be very little, and most of heat that heating element produces in the silicon all carries out the variation that wind is experienced in heat exchange through ceramic sensing substrate and external environment.The structure of transducer of the present invention is applicable to the wind speed wind direction sensor of preparation two dimension.
In this sensor design scheme, in the preparation of first step silicon, utilize standard CMOS process to prepare heating element and temperature element; In the preparation of the second step packaged glass substrate, utilize wet corrosion technique and laser ablation prepared bonding to draw and use through hole with boss and electricity; In the 3rd step aftertreatment technology, utilize reduction process that the substrate of silicon is carried out attenuate, utilize the technology of being coated with that heat-conducting glue is coated with to the back side of ceramic sensing substrate, then envelope is pasted at the back side of attenuate silicon; The 4th step, scribing.Whole sensor prepares process and standard CMOS process is compatible, and sensor chip has been realized wafer level packaging.
The present invention obtains following effect:
1. the glass substrate after the present invention utilizes graphically and the front surface of silicon carry out anode linkage; Can to silicon necessary mechanical support be provided with pasting in the envelope potsherd process at the silicon substrate thinning; Owing to utilize anode linkage that such mechanical support is provided; And then can be through reduction process with the thickness below the substrate thinning to 50 of silicon micron; So greatly degree reduces because the unnecessary power consumption that the heat-conduction effect of silicon substrate causes, and reduces the thermal capacity of transducer through the attenuate silicon substrate, reduces the thermal response time and the sensitivity that improves transducer of transducer.
2. the glass substrate after the present invention utilizes graphically and the front surface of silicon carry out anode linkage; And utilize the sensing ceramic substrate to be encapsulated in the back side of the silicon behind the attenuate through the heat conduction sticker; Because glass substrate has the extremely low coefficient of heat conduction; The hot transduction factor of sensing ceramic substrate just is far longer than glass substrate; Therefore the heat that heating element produces in the silicon carries out heat conduction through the glass substrate and the external world hardly; Blocked the path that heat carries out heat exchange downwards, and the most heats that produce all upwards carry out heat conduction through heat-conducting glue and ceramic substrate and carried out heat exchange through forced convection effect and external environment, the heat of the overwhelming majority all is used for the variation of perception external environment wind speed and direction; Therefore because the thermal loss that heat-conduction effect causes will be very little, transducer can obtain bigger sensitive signal under low power consumpting state.
3. the glass substrate after the present invention utilizes graphically and the front surface of silicon carry out anode linkage; And utilize the sensing ceramic substrate to be encapsulated in the back side of the silicon behind the attenuate through the heat conduction sticker; Can all protect the front surface and the back side of silicon, avoid receiving the pollution of external environment.
4. the anode linkage technology of the present invention's employing and standard CMOS process are compatible.
5. to utilize laser ablation technology on glass substrate, to prepare logical empty in the present invention, and it is corresponding that its position and the electricity on the silicon are drawn pad locations, in wafer level packaging, solved electricity and drawn problem.
Traditional CMOS integrated anemograph; Heating element is produced on the silicon base chip surface; Aspect the heat conduction of reduction silicon-based substrate, a kind of method is to utilize wet corrosion technique to prepare heat insulation cavity at the silicon back side and heating element corresponding region, and its shortcoming is that the thermoinduction film of preparing is too fragile; Thermal stress is bigger to the influence of input, and can't realize the encapsulation of transducer.Another kind method is a preparation porous silicon thermal insulation layer below heating element, and so preparation technology and standard CMOS process are incompatible, and preparation technology's consistency of porous silicon is relatively poor, have improved the difficulty of rear end sensor signal conditioning.The sensor construction that the present invention proposes guaranteed with traditional cmos process compatible fully in; Structural improvement can reduce the heat of transducer heating element generation effectively because the thermal loss that heat-conduction effect causes; Can make most heats carry out the variation that heat exchange comes wind speed and direction in the perception external environment, therefore can under lower power consumption, obtain bigger output signal through ceramic substrate and air.The form of this wafer level packaging is compared with the wind speed wind direction sensor of traditional single-chip package; Greatly reduce the packaging cost of MEMS device on the one hand; Guarantee the consistency of the deviation that sensor package causes on the other hand to a great extent, reduced the cost of transducer back end signal conditioning.
Description of drawings
Fig. 1 is the preparation flow with silicon of heating element and temperature element.
Fig. 2 is the end view of the silicon of preparation completion.
Fig. 3 is the top view of the silicon of preparation completion.
Fig. 4 is the glass substrate after utilizing wet corrosion technique and laser ablation technology graphically.
Fig. 5 is the end view of the glass substrate of preparation completion
Fig. 6 is the top view of the glass substrate of preparation completion.
Fig. 7 is for utilizing anode linkage, reduction process and the chip wafer level packaging of pasting the realization of envelope technology.
Fig. 8 is the monolithic sensor chip after the final scribing.
Embodiment
A kind of manufacturing process based on the wafer level packaging hot type wind speed wind direction sensor of realizing based on the anode linkage technology is following:
The first step, the preparation of silicon, as shown in Figure 1
Step 2, preparation is as first polysilicon 3 of 7 one ends of hot sensing temperature element, and as second polysilicon of polysilicon heating element 4 on first thermal oxide layer 2;
Step 3; Chemical vapor deposition second oxide layer on first thermal oxide layer 2, first polysilicon 3 and second polysilicon; And form oxide layer 6, and utilize etching technics to be prepared on first polysilicon 3 and the polysilicon heating element 4 top oxide layers to etch through hole 5 by first thermal oxide layer 2 and second oxide layer;
Step 5, dry etching oxide layer 6 make bonding with cavity 11 until exposing silicon substrate;
Second step, the packaged glass substrate, as shown in Figure 4
Step 2 utilizes photoetching process and wet corrosion technique that the glass front surface is carried out selective corrosion at the glass substrate upper surface, prepares bonding with boss 13;
Step 3 utilizes laser ablation prepared electricity to draw with through hole 14 at the glass substrate upper surface; The 3rd step, reprocessing, as shown in Figure 7
Step 2, silicon 1 attenuate: utilize the silicon 1 in the chip behind the reduction process para-linkage to carry out attenuate, accomplish the preparation of attenuate silicon 15;
Step 3, potsherd pastes envelope: ceramic sensing substrate 17 is pasted the back side that is encapsulated in attenuate silicon 15 through heat-conducting glue 16;
In the 4th step, the making of transducer is accomplished in scribing, and is as shown in Figure 8.
The present invention is the scheme of a kind of CMOS of realization integrated anemograph preparation and wafer level packaging.The side that sensor chip contacts with wind facies in the external environment is the upper surface of ceramic sensing substrate 17; Through setting up hot link between heat-conducting glue 16 and the attenuate silicon 15; Because ceramic material has certain pyroconductivity, the heat that the polysilicon heating element 4 in the attenuate silicon 15 produces can be set up the distribution in certain temperature field at the upper surface of ceramic sensing substrate 17.This temperature field is symmetrical distribution around ceramic sensing substrate 17 centers on ceramic sensing substrate 17 under calm condition; Exist in external environment under the condition of certain wind speed, this symmetrical distribution is broken, and generates a temperature gradient field, and the direction of gradient direction and wind direction is consistent.4 hot sensing temperature elements 7 be symmetric configuration be distributed in polysilicon heating element 4 on the attenuate silicon 15 around.The temperature field of pottery sensing substrate 17 upper surfaces can utilize the thermal conduction characteristic of heat-conducting glue 16 to pass to hot sensing temperature element, and then measures the change of temperature field situation of ceramic sensing substrate 17 upper surfaces.Output signal to 4 hot sensing temperature elements is handled, and just can obtain the information of wind speed and direction in the external environment.Packaged glass substrate 12 is because the lower coefficient of heat conduction has been isolated the heat-conduction effect of attenuate silicon 15 with external environment.
Traditional CMOS integrated anemograph, the form and the ceramic chip that generally directly utilize flip chip bonding upside-down mounting or heat-conducting glue to attach are realized encapsulation.Because the thermal conductivity far of silicon is much larger than the thermal conductivity of pottery; Therefore the heat overwhelming majority that heating element produces on the silicon of encapsulation back dissipates with heat conducting mode from silicon substrate; Only have only a spot of heat to produce the thermal convection heat exchange through ceramic chip and air; Greatly reduce signal of sensor so on the one hand, improved the operating power of transducer on the other hand, reduced the usefulness of transducer.Based on this problem, forefathers propose to make cavity at the silicon substrate back side and perhaps under heating element, make the heat conduction that one deck porous silicon is used to reduce silicon substrate, so just the encapsulation of transducer or the consistency and the CMOS processing compatibility of technology have been proposed challenge.
Among the present invention, utilize the anode linkage technology to realize the encapsulation of packaged glass substrate 12, completely cut off the heat-conduction effect of attenuate silicon 15 on the one hand, greatly reduce because the loss that heat conduction causes with external environment with attenuate silicon 15 front surfaces; Mechanical support to silicon 1 thinning back side the time is provided on the other hand, and then can have guaranteed silicon 1 is carried out attenuate to the full extent.Can reduce the useless power consumption of transducer largely through above-mentioned technology, the sensitivity that improves transducer, and reduce the sensor's response time.Whole sensor prepares in the process, and preparation technology who is used and standard CMOS process are compatible.
Embodiment 2
A kind of hot type wind speed wind direction sensor based on anode linkage technology; Comprise attenuate silicon 15; The back side of said attenuate silicon 15 is connected with ceramic sensing substrate 17 through heat-conducting glue 16; Be provided with oxide layer 6 in the front of attenuate silicon 15; Be provided with 4 polysilicon heating elements 4 and 4 hot sensing temperature elements 7 at the middle part of oxide layer 6, be provided with electricity at the fringe region of oxide layer 6 and draw 10,4 polysilicon heating elements 4 of pad and 4 hot sensing temperature elements 7 and draw pad 10 through metal lead wire and electricity respectively and be connected; It is characterized in that; On oxide layer 6, be provided with can expose attenuate silicon 15 bonding with cavity 11, on the attenuate silicon 15 that bonding exposes in cavity 11 bonding packaged glass substrate 12 is arranged and by the bonding that is located at packaged glass substrate 12 with boss 13 and attenuate silicon 15 bondings that exposed, be provided with at packaged glass substrate 12 and can make electricity draw the electricity that pad 10 exposes to draw with through hole 14.
Claims (2)
1. hot type wind speed wind direction sensor based on anode linkage technology; Comprise attenuate silicon (15); The back side of said attenuate silicon (15) is connected with ceramic sensing substrate (17) through heat-conducting glue (16); Be provided with oxide layer (6) in the front of attenuate silicon (15); Be provided with 4 polysilicon heating elements (4) and 4 hot sensing temperature elements (7) at the middle part of oxide layer (6); Be provided with electricity at the fringe region of oxide layer (6) and draw pad (10); 4 polysilicon heating elements (4) and 4 hot sensing temperature elements (7) are drawn pad (10) through metal lead wire and electricity respectively and are connected, and it is characterized in that, on oxide layer (6), be provided with can expose attenuate silicon (15) bonding with cavity (11); The attenuate silicon (15) that exposes in cavity (11) at bonding go up that bonding has packaged glass substrate (12) and by the bonding that is located at packaged glass substrate (12) with boss (13) and attenuate silicon (15) bonding that exposed, be provided with at packaged glass substrate (12) and can make electricity draw the electricity that pad (10) exposes to draw with through hole (14).
2. the preparation method of the described hot type wind speed wind direction sensor based on anode linkage technology of a claim 1 is characterized in that:
The first step, the preparation of silicon
Step 1 is at silicon (1) surface heat first thermal oxide layer (2) of growing;
Step 2 goes up first polysilicon (3) of preparation as (7) ends of hot sensing temperature element at first thermal oxide layer (2), and as second polysilicon of polysilicon heating element (4);
Step 3; Chemical vapor deposition second oxide layer on first thermal oxide layer (2), first polysilicon (3) and second polysilicon; And forms oxide layer (6), and utilize etching technics on the oxide layer above first polysilicon (3) and the polysilicon heating element (4), to etch through hole (5) by first thermal oxide layer (2) and second oxide layer;
Step 4; Sputter and graphical metallic aluminium; Wherein first metallic aluminium (8) is as the other end and the electric exit of hot sensing temperature element (7), and second metallic aluminium (9) is as the electric exit of polysilicon heating element (4), and the 3rd metallic aluminium (10) is drawn pad as electricity;
Step 5, dry etching oxide layer (6) make bonding with cavity (11) until exposing silicon substrate;
Second step, the preparation of packaged glass substrate
Step 1 is prepared the packaged glass substrate (12) identical with silicon (1) form factor;
Step 2 utilizes photoetching process and wet corrosion technique that packaged glass substrate (12) front surface is carried out selective corrosion at the upper surface of packaged glass substrate (12), prepares bonding with boss (13);
Step 3 utilizes laser ablation prepared electricity to draw with through hole (14) at packaged glass substrate (12) upper surface;
The 3rd step, reprocessing
Step 1, anode linkage encapsulation: utilize silicon-glass anode linkage technology, the front surface of silicon (1) and the bonding of packaged glass substrate (12) are carried out anode linkage with boss (13) surface;
Step 2, silicon (1) attenuate: utilize the silicon (1) in the chip behind the reduction process para-linkage to carry out attenuate, accomplish the preparation of attenuate silicon (15);
Step 3, potsherd pastes envelope: ceramic sensing substrate (17) is pasted the back side that is encapsulated in attenuate silicon (15) through heat-conducting glue (16);
In the 4th step, the making of transducer is accomplished in scribing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010573973 CN102082105B (en) | 2010-12-06 | 2010-12-06 | Thermal wind sensor based on anodic bonding technology and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010573973 CN102082105B (en) | 2010-12-06 | 2010-12-06 | Thermal wind sensor based on anodic bonding technology and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102082105A CN102082105A (en) | 2011-06-01 |
| CN102082105B true CN102082105B (en) | 2012-05-30 |
Family
ID=44087982
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010573973 Expired - Fee Related CN102082105B (en) | 2010-12-06 | 2010-12-06 | Thermal wind sensor based on anodic bonding technology and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102082105B (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103048487B (en) * | 2012-12-20 | 2014-06-11 | 东南大学 | Wind speed and wind direction sensor with high sensitivity |
| CN104061967B (en) * | 2014-07-09 | 2017-05-10 | 东南大学 | Heat type wind speed and direction sensor based on substrate transfer process and packaging method thereof |
| CN106443056A (en) * | 2016-09-21 | 2017-02-22 | 东南大学 | Wafer level packaging based MEMS wind speed and wind direction sensor structure and packaging method |
| CN107195597A (en) * | 2017-03-27 | 2017-09-22 | 敦捷光电股份有限公司 | Optical fingerprint semi-conductor sensing packaging structure and its manufacture method |
| DE102017206744B9 (en) * | 2017-04-21 | 2023-01-12 | Infineon Technologies Ag | HIGH THERMAL CAPACITY MEMS PACKAGE AND METHOD OF MAKING SAME |
| CN113092809B (en) * | 2021-04-09 | 2022-07-22 | 东南大学 | Film type wind speed and direction sensor with front wind sensing surface and back lead wire and manufacturing method thereof |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007101561A (en) * | 1999-06-14 | 2007-04-19 | Yamatake Corp | Flow rate detector |
| CN1141585C (en) * | 2002-01-11 | 2004-03-10 | 东南大学 | Integrated anemometer using polysilicon temp diode and its preparing process |
| JP3802443B2 (en) * | 2002-05-02 | 2006-07-26 | 株式会社山武 | Flow rate sensor |
| CN1303426C (en) * | 2004-10-14 | 2007-03-07 | 东南大学 | Wind speed sensor based on micro mechanic working and its producing method |
| US20070209433A1 (en) * | 2006-03-10 | 2007-09-13 | Honeywell International Inc. | Thermal mass gas flow sensor and method of forming same |
| CN100568022C (en) * | 2007-03-28 | 2009-12-09 | 哈尔滨理工大学 | Array type multi-parameter wind sensor chip substrate |
| CN100460875C (en) * | 2007-05-11 | 2009-02-11 | 东南大学 | Cross structure two-D wind speed wind direction sensor and its preparation method |
| CN100582784C (en) * | 2008-07-04 | 2010-01-20 | 东南大学 | Micro-mechanical two-dimension wind speed and wind direction sensor and signal processing circuit thereof |
| CN101819214B (en) * | 2010-01-29 | 2011-09-07 | 东南大学 | Integrated anemograph based on ceramics wafer level package and preparation method thereof |
-
2010
- 2010-12-06 CN CN 201010573973 patent/CN102082105B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN102082105A (en) | 2011-06-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102169126B (en) | Hot air speed and air direction sensor based on thinning process and manufacturing method thereof | |
| CN101819214B (en) | Integrated anemograph based on ceramics wafer level package and preparation method thereof | |
| CN102072967B (en) | Gold-gold bonding process-based thermal type wind speed and direction sensor and preparation method thereof | |
| CN102082105B (en) | Thermal wind sensor based on anodic bonding technology and preparation method thereof | |
| CN102095888B (en) | Heat-type wind-speed and wind-direction sensor with heat insulation structure and preparation method thereof | |
| WO2018054101A1 (en) | Wafer level package-based mems wind speed and direction sensor structure and packaging method | |
| CN1325879C (en) | Temperature, wind speed, wind direction and air pressure integration sensor | |
| CN102147421B (en) | Thermal type wind sensor based on anisotropic heat-conducting substrate and preparation method therefor | |
| CN103674399A (en) | Stress dispersion MEMS (Micro-Electro-Mechanical Systems) plastic package pressure sensor and preparation method thereof | |
| CN104061967B (en) | Heat type wind speed and direction sensor based on substrate transfer process and packaging method thereof | |
| CN201886035U (en) | Thermal type wind-speed and wind-direction sensor with thermal-insulating structure | |
| CN111003683B (en) | SiC high-temperature pressure sensor and packaging method thereof | |
| CN106226361A (en) | A kind of board-like gas detecting element of novel slight fever | |
| CN109239392B (en) | Three-dimensional wind speed and direction sensor based on MEMS technology and manufacturing method thereof | |
| CN105547371A (en) | Two-dimensional thermal-type wind speed and directions sensor based on ceramic packaging, and manufacturing method therefor | |
| WO2019242349A1 (en) | Ultra-small high-sensitivity two-dimensional anemometer and manufacturing method thereof | |
| CN202102009U (en) | Thermal wind speed and direction sensor based on Au-Au bonding process | |
| CN102759636A (en) | Capacitive micro-electromechanical system (MEMS) accelerometer and manufacturing method thereof | |
| CN106098717A (en) | high reliability chip packaging method and structure | |
| CN110127597A (en) | Dorsal pore lead type pressure sensor and preparation method thereof | |
| CN107892268B (en) | Pressure sensor and method for manufacturing the same | |
| CN105527454B (en) | A kind of highly sensitive hot type air velocity transducer and its packaging method | |
| CN205984988U (en) | High reliability chip package structure | |
| CN105675917B (en) | A kind of hot type air velocity transducer and its packaging method | |
| CN205527727U (en) | MEMS chip of chip level encapsulation with multi -functional apron |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120530 Termination date: 20151206 |
|
| EXPY | Termination of patent right or utility model |