CN102054767B - Method of laser lift-off for light-emitting diode - Google Patents
Method of laser lift-off for light-emitting diode Download PDFInfo
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- CN102054767B CN102054767B CN 200910209658 CN200910209658A CN102054767B CN 102054767 B CN102054767 B CN 102054767B CN 200910209658 CN200910209658 CN 200910209658 CN 200910209658 A CN200910209658 A CN 200910209658A CN 102054767 B CN102054767 B CN 102054767B
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- 238000000034 method Methods 0.000 title claims abstract description 37
- 238000002955 isolation Methods 0.000 claims abstract description 42
- 238000006243 chemical reaction Methods 0.000 claims abstract description 34
- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 238000005530 etching Methods 0.000 claims description 4
- 230000006378 damage Effects 0.000 abstract description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 16
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 16
- 239000013078 crystal Substances 0.000 description 14
- 230000035882 stress Effects 0.000 description 14
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical group [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 12
- 229910002601 GaN Inorganic materials 0.000 description 11
- 206010007247 Carbuncle Diseases 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 229910052594 sapphire Inorganic materials 0.000 description 7
- 239000010980 sapphire Substances 0.000 description 7
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 description 6
- 210000004877 mucosa Anatomy 0.000 description 6
- 230000003760 hair shine Effects 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 4
- 239000004575 stone Substances 0.000 description 4
- 229940044658 gallium nitrate Drugs 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
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Abstract
The invention relates to a method of laser lift-off for a light-emitting diode. Isolation channels are etched on the periphery of each grain area on an epitaxial layer after the epitaxial layer is formed on a conversion substrate and before a support substrate provided with a bonding metal layer is combined with the epitaxial layer, and a non-etched isolation area is arranged between two adjacent isolation channels. Only the isolation channels and the isolation areas on the periphery of the grain area are irradiated by each laser irradiation through the isolation areas and the bonding metal layer on the isolation channels is heated only once. Stress damage generated by the laser irradiation to the grain area is lightened because an outward stress generated by the isolation area and the outward stress generated by the irradiated grain areas cancel each other.
Description
Technical field
The present invention relates to a kind of method of light-emitting diode laser lift-off, refer to especially a kind of method of light-emitting diode laser lift-off of the stacked crystal layer structure for the manufacture of LED crystal particle.
Background technology
Chief component in the light-emitting diode (Light Emitting Diode, LED) is LED crystal grain, and this LED crystal grain is formed by the multiple crystalline substance of heap of stone of luminous semi-conducting material.LED crystal grain mainly is by gallium phosphide (GaP), gallium aluminum arsenide (GaAlAs), or GaAs (GaAs), and the semi-conducting materials such as gallium nitride (GaN) form, and its internal structure is a PN junction, has unilateral conduction.
Take blue light-emitting diode as example, it generally is to use sapphire (Al on making
2O
3) substrate, gallium nitrate based (GaN-based) that grow better quality in order to one-tenth builds brilliant film.Yet conductivity and the thermal conductivity of sapphire substrate are bad, and restriction conventional blu-ray LED only can adopt positive and negative electrode at the transversary of substrate the same side.Thus, except the light-emitting area that reduces assembly, more because making assembly conducting resistance and forward voltage drop, current-crowding effect (current crowdingeffect) increases.
In order to improve above-mentioned shortcoming, the practice of the light-emitting diode component in high power field is after using sapphire substrate gallium nitride growth base brilliant film of heap of stone at present, for example then utilize the electric plating method metallic film of growing up, or utilize wafer to engage the mode of (wafer bonding), form a new substrate at gallium nitrate based brilliant film of heap of stone, the method (Laser Lift-Off) that re-uses the light-emitting diode laser lift-off removes sapphire substrate, and making gallium nitrate based brilliant film of heap of stone is metal adhesion (Metal Bonding) crystal grain that is positioned on the new substrate at last.New substrate more is adapted to high drive current field by its high coefficient of heat transfer and good conductivity, and the problem such as dispel the heat under the high lumen flux of solution light-emitting diode component.
The method of general light-emitting diode laser lift-off removes sapphire substrate, as shown in Figure 1, on a conversion baseplate 10 (for example sapphire substrate), form successively first an epitaxial layer 20 of illuminating, and these epitaxial layer 20 etchings are defined isolation road 22, form the die region 21 at interval, will be provided with again support substrate 40 and these epitaxial layer 20 combinations of binding metal level 30.Then, one contiguous this conversion baseplate 10 of light shield (not shown) with vacancy section (can be the shapes such as circle, rectangle) is arranged, and laser 50 is passed the vacancy section of light shield and shines this conversion baseplate 10, this moment, the irradiated region 51 of laser 50 was positioned on the die region 21 corresponding to vacancy section of the epitaxial layer 20 on this conversion baseplate 10, and was positioned on the die region 21 isolation road 22 on every side (as shown in Figure 2).After utilizing 10 heating of laser 50 blanket type ground scan process monoblock conversion baseplate, this conversion baseplate 10 can be peeled off this epitaxial layer 20, this moment, the die region 21 of this epitaxial layer 20 was binded metal level 30 and these support substrate 40 combinations by this.
Yet, as shown in Figure 3, when this conversion baseplate 10 is incorporated into this support substrate 40 with this epitaxial layer 20, laser 50 pass light shield irradiated region 51 can because conversion baseplate 10 and support substrate 40 in conjunction with the peripheral warpage of rear generation the problem of aiming at is arranged.When laser 50 passes the vacancy section of light shield and shines this conversion baseplate 10, this moment laser 50 irradiated region 51 on aiming at, for the die region 21 of periphery, the problem that irradiated region 51 can oriented conversion baseplate 10 off-centrings.So, even if the vacancy section of light shield has calculated precisely, for the epitaxial layer 20 of these conversion baseplate 10 peripheries, when laser 50 blanket type ground scan process monoblock conversion baseplate 10, the irradiated region 51 of this laser 50 still can have twice irradiating machine meeting for adjacent isolation road 22 around the die region 21, so the bonding metal level 30 in isolation road 22 also will be heated twice, and continuous high temperature will be so that bonding metal level 30 be destroyed.Present settling mode is the width of widening isolation road 22, the chance of avoiding the bonding metal level 30 in this isolation road 22 to have secondary to be heated.
In addition, when laser 50 each die region 21 of irradiation, adjacent die region 21 all can directly affect by illuminated district 51 interior these die region 21 outside stress F1 that produce on every side, after laser 50 scan process monoblock conversion baseplate 10, when each die region 21 of epitaxial layer 20 may be by 50 irradiation of laser repeatedly, produce the structural deterioration that stress F1 causes, cause the structure of LED to be destroyed.
In addition, United States Patent (USP) is announced US7202141, it has disclosed a kind of method of release liner, it is prior to forming gallium arsenide layer on the alumina single crystal base material, gallium arsenide layer removes the processing procedure passage by reaction equation ion etching method or other, make gallium arsenide layer form the GaAs district of a plurality of identical shaped and equidistant symmetric arrays, form metal base with electroplating process at GaAs again, then, re-use the position of ultraviolet laser cutting metal substrate between corresponding each GaAs district, on metal base, form again support film, afterwards, carry out successively the laser lift-off processing procedure base material and metal base are removed, make support film form the GaAs chip.In above-mentioned processing procedure, form with the isolated GaAs district of passage by gallium arsenide layer, can significantly be reduced in the laser lift-off processing procedure, the stress between GaAs/alumina single crystal interface is concentrated and the stress rupture that may cause.
And announce in US6617261 number at United States Patent (USP), then being that announcement is a kind of forms the structure and method with groove pattern gallium nitride layer by GaN (gallium nitride) base material on the alumina single crystal material, pass through gallium nitride nucleating layer growing gallium nitride layer at the alumina single crystal base material first, with the upper surface of silica deposit in gallium nitride layer, and by micro-photographing process formation strip pattern, then, form again the groove of corresponding bar graph at gallium nitride layer with wet chemistry or dry etching method, wherein, the width of groove can be 100
～1 μ m.
Aforesaid known technology, it has all disclosed between GaAs (gallium nitride) district and has formed passage, therefore it only can solve in the laser lift-off processing procedure, problem of stress concentration between GaAs (gallium nitride)/substrate interface, the method that there is no solves metal base and is subject to heating for multiple times and suffers the problem of thermal stress damage.
Summary of the invention
Therefore, main purpose of the present invention is to solve the problem in twice irradiation of bonding metal level in isolation road, solves the bonding metal level and is heated for twice, makes the problem that metal-layer structure is destroyed of binding, and promotes the yield of crystal grain.
Another object of the present invention is to solve stress that irradiated each die region the produces crystal grain around directly exerting an influence, prevent that stacked crystal layer structure from being destroyed, promote the yield of crystal grain.
Via as can be known above, for reaching above-mentioned purpose, the technical scheme that technical solution problem of the present invention adopts is, a kind of epitaxial layer that is applied to form on the conversion baseplate is provided, and bind a support substrate of metal level before this epitaxial layer is combined will being provided with one, the present invention defines an isolation road around each die region with this epitaxial layer etching, and is provided with not etched isolated area between adjacent two isolation roads.Wherein, the spacing of this die region is defined by two adjacent isolation roads and the isolated area in the middle of it to form, and the width in this isolation road is 1 μ m (micron)～10 μ m, and the width of this isolated area is 10 μ m～100 μ m.
Thus, between each adjacent die region, form two isolation roads and an isolated area, therefore, when this support substrate passes through to bind metal level after this epitaxial layer is combined, utilizing scan process monoblock conversion baseplate heating in laser blanket type ground when this conversion baseplate is peeled off this epitaxial layer, the vacancy section that passes light shield when laser shines this conversion baseplate, the irradiated region of laser only can be done irradiation to isolation road and isolated area around the die region, so just at last in the die region of this conversion baseplate periphery, also only have the isolated area of illuminated die region periphery to be made after-sun, and will only have the once irradiating chance in the isolation road of each die region periphery, the bonding metal level in the isolation road will only be heated once.
And, when each die region of Ear Mucosa Treated by He Ne Laser Irradiation, because irradiated die region and the isolated area around it are all in the irradiated region of laser, so irradiated die region produce to external carbuncle will by around isolated area produce opposite stress and offset, alleviate that each die region in the epitaxial layer is subject to stress and the structural deterioration that produces.
For known technology, the invention has the advantages that the isolated area by forming between each adjacent die region, make Ear Mucosa Treated by He Ne Laser Irradiation each time only can do irradiation to isolation road and isolated area around the die region, so the isolation road at each die region periphery will only have the once irradiating chance, bonding metal level in the isolation road will only be heated once, reduce laser to binding the destruction of metal-layer structure, the destruction of this bonding metal-layer structure causes the structure of LED to be destroyed.
With respect to the disclosed technology of US7202141 case, this known technology does not have the present invention defined by the formed isolated area of uncorroded epitaxial layer, and namely known technology does not have the GaAs isolated area as protection metal base purposes.
In addition, known technology laser, owing to there is not the existence of isolated area, it can shine the irradiated region that a plurality of GaAs consist of, single die region is then only contained in the present invention, so isolated area by forming between each adjacent die region, when each die region of Ear Mucosa Treated by He Ne Laser Irradiation, by the isolated area around the irradiated die region produce to external carbuncle, with cancelling each other to external carbuncle that irradiated die region produces, alleviate each die region in the epitaxial layer by stress rupture structure that Ear Mucosa Treated by He Ne Laser Irradiation produced.
Description of drawings
Fig. 1 is the schematic diagram of the method peeled off of known luminescence diode laser.
Fig. 2 is the schematic diagram of known laser irradiated region and die region.
Fig. 3 is the irradiated region of this conversion baseplate zones of different and the relative position schematic diagram of die region.
Fig. 4 is the stress schematic diagram of known die region during by Ear Mucosa Treated by He Ne Laser Irradiation.
Fig. 5 is the schematic diagram of the method for light-emitting diode laser lift-off of the present invention.
Fig. 6 is the schematic diagram of laser irradiation area of the present invention and die region.
Fig. 7 is the stress schematic diagram of die region of the present invention during by Ear Mucosa Treated by He Ne Laser Irradiation.
Embodiment
Therefore, relevant detailed content of the present invention and technical descriptioon now are described further by embodiment, but will be appreciated that this embodiment only is as example, and should not be interpreted as restriction of the invention process.
With reference to Fig. 5, the present invention is applied to the method for existing light-emitting diode laser lift-off, and the method for light-emitting diode laser lift-off forms an epitaxial layer 200 of illuminating on the implementation successively on a conversion baseplate 100 (for example sapphire substrate) for elder generation.What the method for peeling off from the known luminescence diode laser was different is, the present invention defines an isolation road 220 around each die region 210 with these epitaxial layer 200 etchings, and 220 in adjacent two isolation roads be provided with not etched, also be an isolated area 230 of these epitaxial layer 200 materials.Therefore, the spacing of this die region 210 is defined with the isolated area 230 that is positioned at its centre by two adjacent isolation roads 220 to form.In the enforcement, the width in this isolation road 220 is 1 μ m～10 μ m, and the width of this isolated area 230 is 10 μ m～100 μ m, and the width of this isolated area 230 is greater than the width in this isolation road 220.
Then, will be provided with again support substrate 400 and these epitaxial layer 200 combinations of binding metal level 300.
Then, one contiguous this conversion baseplate 100 of light shield (not shown) with vacancy section (can be the shapes such as circle, rectangle) is arranged, and laser 500 is passed the vacancy section of light shield and shines this conversion baseplate 100, after utilizing 100 heating of laser 500 blanket type ground scan process monoblock conversion baseplate, this conversion baseplate 100 can be peeled off this epitaxial layer 200, this moment, the die region 210 of this epitaxial layer 200 was binded metal level 300 and these support substrate 400 combinations by this.
Take the vacancy section of rectangular shape as example, as shown in Figure 6, when the irradiated region 510 of laser 500 be positioned at epitaxial layer 200 on this conversion baseplate 100 corresponding to the die region 210 of vacancy section the time because 210 of each adjacent die region have two isolation roads 220 and an isolated area 230.Therefore, laser 500 irradiation each time all only can shine the other isolated area 230 in the die region 210 that will shine, the isolation road 220 around this illuminated die region 210 and aforementioned isolation road 220, and the isolation road 220 that is positioned at these isolated area 230 opposite sides can not be irradiated to.Especially for this conversion baseplate 100 and the peripheral warpage place of this support substrate 400 in conjunction with rear generation, when laser 500 passes the vacancy section of light shield and shines this conversion baseplate 100, the die region 210 of these conversion baseplate 100 peripheries also only has the isolated area 230 of illuminated die region 210 peripheries to be made after-sun by laser 500, and will only can by laser 500 once irradiatings, namely can be heated once at those 300 of bonding metal levels of isolating roads 220 in the isolation road 220 of each die region 210 periphery.For the die region 210 of periphery, even if the phenomenon of oriented conversion baseplate 100 off-centrings of irradiated region 510 meetings, the inventive method can be removed the chance of 500 pairs of isolation road 220 after-suns of laser, reduces by 500 pairs of destructions of binding metal level 300 materials of laser.
Although, these isolated areas 230 are born the problem of after-sun, but because these isolated areas 230 can't be used on the process of making light-emitting diode is used, after this conversion baseplate 100 divests, recycling dry ecthing mode is removed these isolated areas 230 and is got final product, and does not affect follow-up light-emitting diode processing procedure.
With reference to Fig. 7, in laser 500 irradiations this die region 210 is produced on external carbuncle F1 in addition, the present invention is when laser 500 each die region 210 of irradiation, because irradiated die region 210 and the isolated area 230 around it are all in the irradiated region 510 of laser 500, so what irradiated die region 210 produced will be offseted by the isolated area 230 opposite stress F2 that produces on every side to external carbuncle F1, alleviate the stress F1 that produces when each die region 210 is subject to laser 500 irradiation in the epitaxial layer 200 and destroy this die region 210 structures.
Suppose that overlooking of die region 210 is square, and its length of side is L, and the spacing of adjacent die region 210 is 2L '.Then irradiated die region 210 produce to external carbuncle F1 ∝ L
2, and the isolated area 230 around the illuminated die region 210 produces to external carbuncle F2 ∝ (L+2L ')
2-L
2With L=100 μ m, 2L '=10 μ m are example, and what irradiated die region 210 produced is offset approximately by the stress F2 that isolated area 230 is on every side produced to external carbuncle F1
Claims (3)
1. the method for a light-emitting diode laser lift-off, be applied to that a conversion baseplate (100) is upper to form an epitaxial layer (200), and be provided with a support substrate (400) that binds metal level (300) and described epitaxial layer (200) in conjunction with after described conversion baseplate (100) peel off; It is characterized in that:
Before will being provided with the described support substrate (400) and described epitaxial layer (200) combination of described bonding metal level (300), described epitaxial layer (200) etching defines an isolation road (220) in each die region (210) on every side, and be provided with the isolated area (230) that not etched epitaxial layer (200) forms between adjacent two isolation roads (220), wherein, the width of described isolated area (230) is 10 microns to 100 microns;
Therefore, each irradiated region (510) of laser (500) contain on every side isolation road (220) of single die region (210), described die region (210), with in described die region (210) isolated area (230) on every side.
2. the method for light-emitting diode laser lift-off according to claim 1 is characterized in that, the spacing of described die region (210) (2L ') is defined by two adjacent isolation roads (220) and isolated area (230) in the middle of it and forms.
3. the method for light-emitting diode laser lift-off according to claim 1 is characterized in that, the width in described isolation road (220) is 1 micron to 10 microns.
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|---|---|---|---|
| CN 200910209658 CN102054767B (en) | 2009-11-03 | 2009-11-03 | Method of laser lift-off for light-emitting diode |
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|---|---|---|---|
| CN 200910209658 CN102054767B (en) | 2009-11-03 | 2009-11-03 | Method of laser lift-off for light-emitting diode |
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| CN102054767B true CN102054767B (en) | 2013-02-13 |
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| CN103066166A (en) * | 2011-10-18 | 2013-04-24 | 联胜光电股份有限公司 | Light emitting diode laser lift-off method |
| CN114122202B (en) * | 2021-11-11 | 2023-05-16 | 重庆康佳光电技术研究院有限公司 | Chip and preparation method thereof |
| CN114799488A (en) * | 2022-05-26 | 2022-07-29 | 卡门哈斯激光科技（苏州）有限公司 | Method for removing PET blue film of power battery with assistance of laser |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6617261B2 (en) * | 2001-12-18 | 2003-09-09 | Xerox Corporation | Structure and method for fabricating GaN substrates from trench patterned GaN layers on sapphire substrates |
| CN1973375A (en) * | 2004-03-29 | 2007-05-30 | J.P.瑟塞尔联合公司 | Method of separating layers of material using laser beam |
| US7294521B2 (en) * | 2002-04-09 | 2007-11-13 | Lg Electronics Inc. | Method of fabricating vertical devices using a metal support film |
| CN101599418A (en) * | 2008-06-02 | 2009-12-09 | 联胜光电股份有限公司 | Laser-stripping method |
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2009
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6617261B2 (en) * | 2001-12-18 | 2003-09-09 | Xerox Corporation | Structure and method for fabricating GaN substrates from trench patterned GaN layers on sapphire substrates |
| US7294521B2 (en) * | 2002-04-09 | 2007-11-13 | Lg Electronics Inc. | Method of fabricating vertical devices using a metal support film |
| CN1973375A (en) * | 2004-03-29 | 2007-05-30 | J.P.瑟塞尔联合公司 | Method of separating layers of material using laser beam |
| CN101599418A (en) * | 2008-06-02 | 2009-12-09 | 联胜光电股份有限公司 | Laser-stripping method |
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