CN101823690A - Manufacturing method of SU-8 nano fluid system - Google Patents
Manufacturing method of SU-8 nano fluid system Download PDFInfo
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- CN101823690A CN101823690A CN 201010143718 CN201010143718A CN101823690A CN 101823690 A CN101823690 A CN 101823690A CN 201010143718 CN201010143718 CN 201010143718 CN 201010143718 A CN201010143718 A CN 201010143718A CN 101823690 A CN101823690 A CN 101823690A
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Abstract
The invention discloses a manufacturing method of an SU-8 nano fluid system, which is characterized by comprising the following steps of: manufacturing a photoetching-stamping combined template by utilizing a holographic exposure technology, applying the photoetching-stamping combined template to the processing of the SU-8 nano fluid system and realizing the manufacture of the nano fluid system by utilizing the different functions of different parts contained in the photoetching-stamping combined template and combining a bonding technology. The method has simple operation, realizes the synchronous molding of a sample pool and a nanochannel, has low manufacturing cost and does not need harsh equipment. Shown by the result of a fluid filling test for the manufactured nano fluid system, the system has no layering or blockage, the boundary of the channel is clear, the interface of bonding also can not be seen, and good quality is showed.
Description
Technical field
The present invention relates to the preparation method of a kind of SU-8 nano-fluid system, more particularly relate to utilize photoetching-impression gang form to make the method for SU-8 nano-fluid system, belong to micro-nano fluid system manufacture technology field.
Background technology
In recent years, basis and technology application study that the nano-fluid system is relevant become field, noticeable forward position, and it is commonly defined as the above cross section of the mobile passage one dimension of fluid and is in hundreds of size ranges to several nanometers.Fluid transmits therein and has special character, can make many physicochemical properties of leading macroscopic view and transmission of micron dimension fluid and molecular behavior change.Not only broken through some key concepts of traditional theory based on this systematic research, and the achievement of some further investigations there is major application in many fields such as the stretching manipulation of dna molecular, medicine release tech, battery technology, laser instrument.
The common method of processing nano-fluid system is to utilize beamwriter lithography or focused-ion-beam lithography technology to obtain the nanometer channel structure at present, and utilizes bonding or sacrificial layer technology to realize the top seal of nanochannel.Although said method can be realized the accurate control of nanochannel size, but limited material and only can be chosen as glass, silicon and compound thereof etc., while electron beam and focused ion beam technology long processing time, anode linkage Technology Need high temperature high voltage, the removal of sacrifice layer may need the time of a couple of days, this has increased cost of manufacture and cycle undoubtedly, is unfavorable for developing to the devices in batches direction.
Polymeric material is received the alternative materials of Flow Control passage and system because of its excellent in chemical mechanical performance, bio-compatibility, little processing characteristics begin to become, be applied to DNA and handle and researchs such as selectivity is fixed, fluid transmission.
Nanometer embossing is the common method of making the micro polymer micro-nano structure, refer to that mainly utilizing the seal with nanometer feature sizes to remove to push the polymer that is heated reaches the effect of duplicating seal graphics, have distinguishing features such as high-resolution, low cost, high yield, be suitable for the disposable demand of micro-nano-fluidic control chip.But the nano-fluid system has comprised passage and the large-sized sample pool structure with nanoscale, nanometer embossing can not be processed simultaneously to such micro-nano compound structure, often needs to make the such large scale structure of sample cell in conjunction with conventional micron manufacturing process.This has proposed very high requirement to Alignment Process and precision undoubtedly, has increased the complexity and the cost of manufacture of technology simultaneously.
Summary of the invention
The present invention is for avoiding above-mentioned existing in prior technology weak point, provide a kind of in conjunction with combination photoetching-impression block technology and utilize the preparation method of the SU-8 nano-fluid system of SU-8 photoresist, realize making the expansion of material and the renewal of preparation method, and realize the reduction of cost and the raising of make efficiency.
Technical solution problem of the present invention adopts following technical scheme:
The characteristics of the preparation method of SU-8 nano-fluid of the present invention system are to operate as follows:
A, utilize holography method on quartz substrate, to make the raster graphic of photoresist, and the raster graphic of described photoresist is transferred on the quartz substrate, form and have the quartz substrate of optical grating construction by reactive ion etching; Spin coating is used to make the photoresist of sample cell mask on described quartz substrate with optical grating construction, utilizes the sample cell template to form the photoresist figure with sample pool structure by exposure imaging; Utilize reactive ion etching with the described transfer of photoresist figure on quartz substrate with sample pool structure, the surface deposition Cr film of the quartz substrate after finishing transfer, acquisition comprises the combination photoetching-impression block of sample cell Cr mask arrangement and grating nano dimensional structure;
B, at Si sheet surface spin coating SU-8 photoresist, form the Si substrate through baking;
C, behind the surperficial spin coating releasing agent of described combination photoetching-impression block, be laminated in the described Si substrate, preheating makes the softening back of the SU-8 photoresist of described Si substrate surface apply impression pressure to described combination photoetching-impression block, make described combination photoetching-impression block be pressed into softening SU-8 photoresist, keep the cooling naturally after 20 minutes of impression pressure, obtain making up the combination of photoetching-impression block, Si substrate and SU-8 photoresist;
D, the combination photoetching-impression block of the SU-8 photoresist in the described combination by printing opacity carried out uv-exposure, exposure is after baking is solidified the SU-8 photoresist, simultaneously, the grating nano dimensional structure on combination photoetching-impression block is replicated on the described SU-8 photoresist; Through being separated into the Si substrate that combination photoetching-impression block and surface adhesion have the SU-8 photoresist again after the cooling naturally; There is the Si substrate of SU-8 photoresist to be immersed in the PGMEA developer solution described surface adhesion, makes that unexposed SU-8 photoresist is dissolved in developer solution under the sample cell Cr mask arrangement, finish making at the suprabasil sample cell of described Si;
E, at the surperficial spin coating bonded layer SU-8 photoresist of PET sheet material, through behind the baking-curing bonded layer SU-8 photoresist on the described PET sheet material being carried out uv-exposure, the bonded layer SU-8 photoresist after baking makes exposure solidifies again, through cool off naturally the PET substrate; With being diluted to thickness is that the dilution SU-8 photoresist of 150nm is spun on the bonded layer SU-8 photoresist of curing;
F, will after handling, oxygen gas plasma be laminated on the described PET substrate through the Si substrate that described steps d is finished making, through the pre-after-applied impression pressure of thermal softening, make that dilution SU-8 photoresist is bonding with SU-8 photoresist in bonded layer SU-8 photoresist and the Si substrate, keep the cooling naturally after 20 minutes of impression pressure; See through the PET substrate suprabasil each the SU-8 photoresist layer of Si is carried out uv-exposure, after finishing exposure, toast for the stepped construction that includes Si substrate, each SU-8 photoresist layer and PET substrate, make between each SU-8 photoresist layer fully behind the curing cross-linked, remove the making that the PET substrate is promptly finished SU-8 nano-fluid system.
The characteristics of the preparation method of SU-8 nano-fluid of the present invention system also are:
In described step a, described reactive ion etching process is with CHF
3With the mist of Ar be etching gas, CHF by volume
3: Ar is 3: 1.
Releasing agent among the described step c is DC20.
The wavelength of the uv-exposure light source in described each step is 365nm.
Dilution SU-8 photoresist among the described step e is to be that 2002 SU-8 photoresist dilutes by 20 times volume ratio with cyclopentanone to model.
Among the described step f vacuum that oxygen gas plasma handles being carried out in the Si substrate is 25Pa, and power is 60W, and bombardment time is 15 seconds.
Compared with the prior art, useful technique effect of the present invention is embodied in:
1, than tradition utilizes beamwriter lithography or focused-ion-beam lithography technology to obtain the nanometer channel structure, and the nanofeature structure that the present invention adopts holographic method to make combination photoetching impression formboard has large tracts of land, low cycle and advantage cheaply.
2, the present invention will make up photoetching-impression block and be applied to nano-fluid system manufacturing process, this method has remedied the deficiency of nano impression, realized the synchronous forming of sample cell and nanochannel, the method simple controllable, and realized the making of nano-fluid in conjunction with SU-8 double-layer gum process and PET sacrificial layer technology.
Description of drawings
Fig. 1 is the making flow chart of photoetching of the present invention-impression gang form.
Fig. 2 is the making flow chart that the present invention is based on the nano-fluid system of SU-8.
Number in the figure: 1 is PET substrate, 12 bonded layer SU-8 photoresists, 13 dilution SU-8 photoresists for Si substrate, 11 for SU-8 photoresist, 10 for grating nano dimensional structure, 9 for sample cell Cr mask arrangement, 8 for combination photoetching-impression block, 7 for Cr film, 6 for sample cell template, 5 for the photoresist that is used to make the sample cell mask, 4 for quartz substrate, 3 for the photoresist that is used to make grating mask, 2.
Below pass through the specific embodiment, and the invention will be further described in conjunction with the accompanying drawings.
The specific embodiment
Concrete enforcement undertaken by following process:
1, cleaning quartz substrate, and spin coating is used to make the photoresist of grating mask on quartz substrate, shown in A1 among Fig. 1; Utilize holography method on quartz substrate, to make the raster graphic of photoresist, shown in A2 among Fig. 1; By reactive ion etching the raster graphic of photoresist is transferred on the quartz substrate again, formed quartz substrate, be used to make the photoresist of sample cell mask having spin coating on the quartz substrate of optical grating construction, shown in A3 among Fig. 1 with raster graphic structure; Utilize the sample cell template that photoresist is carried out exposure imaging, form photoresist figure, shown in A4 among Fig. 1 with sample pool structure; Utilize reactive ion etching will have the transfer of photoresist figure on quartz substrate of sample pool structure, and the surface deposition Cr film of the quartz substrate after finishing transfer, shown in A5 among Fig. 1; Remove residual photoresist with acetone at last, obtain combination photoetching-impression block, wherein make up photoetching-impression block and comprise sample cell Cr mask arrangement and grating nano dimensional structure, see Figure 1A 6.In the reactive ion etching process, use CHF
3With the mist of Ar as etching gas, mist is CHF
3With Ar is to mix at 3: 1 by volume.
2, with the Si sheet with the ultrasonic processing of acetone 5 minutes, dash to drench with deionized water again and dry up, in baking oven with 130 ℃ of bakings 30 minutes, after cooling off naturally, at the SU-8 photoresist of Si sheet surface spin coating model 2025, and baking formed the Si substrate in 20 minutes under 90 ℃ temperature, shown in B1 among Fig. 2;
3, on the raster graphic face of combination photoetching-impression block with the speed spin coating releasing agent of 2000RPM; Combination photoetching-the impression block that scribbles releasing agent is laminated in the Si substrate that the surface has the SU-8 photoresist, after 90 ℃ of preheatings 10 minutes, apply the impression pressure of 2Mpa to combination photoetching-impression block, make combination photoetching-impression block be pressed into through thermoplastic SU-8 photoresist, shown in B2 among Fig. 2, keep the cooling naturally after 20 minutes of 90 ℃ of temperature and impression pressure; Obtain making up the combination of photoetching-impression block, Si substrate and SU-8 photoresist;
4, the combination photoetching-impression block of the SU-8 photoresist in the combination by printing opacity carried out uv-exposure, exposure dose is 200mJ/cm
2, the SU-8 photoresist after the exposure is carried out baking-curing, baking temperature is 90 ℃, stoving time is 10 minutes, through baking-curing, the grating nano dimensional structure on combination photoetching-impression block can copy on the SU-8 photoresist, forms the grating nano dimensional structure on the SU-8 photoresist; Naturally be separated into the Si substrate that combination photoetching-impression block and surface adhesion have the SU-8 photoresist after the cooling again; There is the Si substrate of SU-8 photoresist to immerse the PGMEA developer solution surface adhesion, SU-8 photoresist curing after the exposure is insoluble to developer solution, unexposed SU-8 photoresist is dissolved in developer solution under the sample cell Cr mask arrangement, is implemented in the making of the suprabasil sample cell of Si, shown in B3 among Fig. 2.
5, get the PET sheet material, shown in B4 among Fig. 2, the surperficial spin coating model of PET sheet material be 2025, as the bonded layer SU-8 photoresist of bonded layer, baking is 20 minutes under 90 ℃ of conditions, bonded layer SU-8 photoresist on the PET sheet material is carried out uv-exposure, and exposure dose is 100mJ/cm
2Bonded layer SU-8 photoresist after the exposure toasted make the bonded layer SU-8 photoresist of exposure solidify, baking temperature is 90 ℃, and stoving time is 10 minutes, cool off naturally the PET substrate, shown in B5 among Fig. 2.Cyclopentanone: SU-8 is that 100: 5 pairs of models are that 2002 SU-8 photoresist dilutes by volume, and the SU-8 photoresist thickness after the dilution is 150nm.With dilution back thickness is that 150nm SU-8 photoresist is spun on the bonded layer SU-8 photoresist of curing, as the adhesion layer of the bonded layer SU-8 photoresist that solidifies, shown in B6 among Fig. 2;
6, will finish the Si substrate with grating nano dimensional structure and sample pool structure of making through step 4 is laminated in the PET substrate after oxygen gas plasma is handled, with 75 ℃ of preheatings 10 minutes, apply the impression pressure of 0.5Mpa, make the SU-8 photoresist that SU-8 photoresist in bonded layer SU-8 photoresist and the Si substrate is bonding, keep 75 ℃ and the cooling naturally after 20 minutes of impression pressure, see through the PET substrate suprabasil each the SU-8 photoresist layer of Si is carried out uv-exposure, exposure dose is 200mJ/cm
2After finishing exposure, toast, make between each SU-8 photoresist layer fully behind the curing cross-linked for the stepped construction that includes Si substrate, each SU-8 photoresist layer and PET substrate, remove the PET substrate and promptly finish the making of SU-8 nano-fluid system, shown in Fig. 2 B7.Wherein the back baking time is 20 minutes, and temperature rises to 90 ℃ by 75 ℃, and rate of rise in temperature is 2 ℃/minute.
Claims (5)
1. the preparation method of a SU-8 nano-fluid system is characterized in that operating as follows:
A, utilize holography method go up to make the raster graphic of photoresist (1), and the raster graphic of described photoresist (1) is transferred on the quartz substrate (2), form and have the quartz substrate (2) of optical grating construction by reactive ion etching in quartz substrate (2); Go up the photoresist (3) that spin coating is used to make the sample cell mask in described quartz substrate (2), utilize sample cell template (4) to form photoresist figure by exposure imaging with sample pool structure with optical grating construction; Utilize reactive ion etching with the described transfer of photoresist figure on quartz substrate (2) with sample pool structure, the surface deposition Cr film (5) of the quartz substrate after finishing transfer (2), acquisition comprises the combination photoetching-impression block (6) of sample cell Cr mask arrangement (7) and grating nano dimensional structure (8);
B, at Si sheet surface spin coating SU-8 photoresist (9), form Si substrate (10) through baking;
C, behind the surperficial spin coating releasing agent of described combination photoetching-impression block (6), be laminated in the described Si substrate (10), preheating makes the softening back of the SU-8 photoresist (9) on described Si substrate (10) surface apply impression pressure to described combination photoetching-impression block (6), make described combination photoetching-impression block (6) be pressed into softening SU-8 photoresist (9), keep the cooling naturally after 20 minutes of impression pressure, obtain making up the combination of photoetching-impression block (6), Si substrate (10) and SU-8 photoresist (9);
D, the combination photoetching-impression block (6) of the SU-8 photoresist (9) in the described combination by printing opacity carried out uv-exposure, exposure is after baking is solidified SU-8 photoresist (9), simultaneously, the grating nano dimensional structure (8) on combination photoetching-impression block (6) is replicated on the described SU-8 photoresist (9); Through being separated into the Si substrate (10) that combination photoetching-impression block (6) and surface adhesion have SU-8 photoresist (9) again after the cooling naturally; There is the Si substrate (10) of SU-8 photoresist (9) to be immersed in the PGMEA developer solution described surface adhesion, makes that unexposed SU-8 photoresist (9) is dissolved in developer solution under the sample cell Cr mask arrangement (7), finish the making of the sample cell in described Si substrate (10);
E, at the surperficial spin coating bonded layer SU-8 photoresist (12) of PET sheet material, through behind the baking-curing bonded layer SU-8 photoresist (12) on the described PET sheet material being carried out uv-exposure, bonded layer SU-8 photoresist (12) after baking makes exposure solidifies again, through cool off naturally PET substrate (11); With being diluted to thickness is that the dilution SU-8 photoresist (13) of 150nm is spun on the bonded layer SU-8 photoresist (12) of curing;
F, will after handling, oxygen gas plasma be laminated on the described PET substrate (11) through the Si substrate (10) that described steps d is finished making, through the pre-after-applied impression pressure of thermal softening, it is bonding to make dilution SU-8 photoresist (13) that SU-8 photoresist (9) is gone up in bonded layer SU-8 photoresist (12) and Si substrate (10), keeps impression pressure to cool off naturally after 20 minutes; See through PET substrate (11) each the SU-8 photoresist layer in the Si substrate (10) is carried out uv-exposure, after finishing exposure, toast for the stepped construction that includes Si substrate (10), each SU-8 photoresist layer and PET substrate (11), make between each SU-8 photoresist layer fully behind the curing cross-linked, remove the making that PET substrate (11) is promptly finished SU-8 nano-fluid system.
2. the preparation method of SU-8 nano-fluid according to claim 1 system is characterized in that in described step a described reactive ion etching process is with CHF
3With the mist of Ar be etching gas, CHF by volume
3: Ar is 3: 1.
3. the preparation method of SU-8 nano-fluid according to claim 1 system is characterized in that the releasing agent among the described step c is DC20.
4, the preparation method of SU-8 nano-fluid according to claim 1 system, the wavelength that it is characterized in that the uv-exposure light source in described each step is 365nm.
5. the preparation method of SU-8 nano-fluid according to claim 1 system is characterized in that dilution SU-8 photoresist (13) among the described step e is is that 2002 SU-8 photoresist dilutes by 20 times volume ratio with cyclopentanone to model.
6. the preparation method of SU-8 nano-fluid according to claim 1 system is characterized in that among the described step f that it is 25Pa that the vacuum that oxygen gas plasma handles is carried out in Si substrate (10), and power is 60W, and bombardment time is 15 seconds.
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102060262A (en) * | 2010-12-03 | 2011-05-18 | 合肥工业大学 | Method for manufacturing micro-nano fluid control system by using low-pressure bonding technology |
| CN102243435A (en) * | 2011-04-20 | 2011-11-16 | 合肥工业大学 | Method for preparing micro-nanometer fluid system through compound developing of positive and negative photoresists |
| CN102621805A (en) * | 2012-03-31 | 2012-08-01 | 合肥工业大学 | Method for preparing micro-nano-channels based on liquid-gas equilibrium polymer nano-channels self-building mechanism |
| CN102897709A (en) * | 2012-09-17 | 2013-01-30 | 大连理工大学 | Manufacturing method of low-cost micronano integrated structure |
| CN102998901A (en) * | 2012-12-12 | 2013-03-27 | 中国科学院合肥物质科学研究院 | Preparation method of SU-8 nanofluid channel of integrated scale |
| CN103076284A (en) * | 2013-01-28 | 2013-05-01 | 中国科学院半导体研究所 | Fabrication method of optical micro-nano biosensor integrated with microfluidic system |
| CN103135342A (en) * | 2013-03-07 | 2013-06-05 | 中国科学院合肥物质科学研究院 | Method for manufacturing nanofluid channel of integrated scaleplate based on flexible template |
| CN106444276A (en) * | 2016-09-26 | 2017-02-22 | 合肥工业大学 | Manufacturing method of nano fluid channel for achieving controllable size by using double-layer adhesive |
| CN106501520A (en) * | 2016-10-18 | 2017-03-15 | 成都市亿泰科技有限公司 | A kind of illicit drugs inspection reagent paper based on microfluidic capillary structure and preparation method thereof |
| CN109164676A (en) * | 2018-10-31 | 2019-01-08 | 京东方科技集团股份有限公司 | Impression block and method for stamping |
| CN110108678A (en) * | 2019-04-19 | 2019-08-09 | 中国科学院苏州生物医学工程技术研究所 | A kind of fluorescence nano on-gauge plate and its preparation and application |
| CN110902647A (en) * | 2019-12-05 | 2020-03-24 | 深圳先进技术研究院 | Method for manufacturing nano channel with gradually changed size |
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| CN102060262A (en) * | 2010-12-03 | 2011-05-18 | 合肥工业大学 | Method for manufacturing micro-nano fluid control system by using low-pressure bonding technology |
| CN102243435A (en) * | 2011-04-20 | 2011-11-16 | 合肥工业大学 | Method for preparing micro-nanometer fluid system through compound developing of positive and negative photoresists |
| CN102243435B (en) * | 2011-04-20 | 2012-08-22 | 合肥工业大学 | Method for preparing micro-nanometer fluid system through compound developing of positive and negative photoresists |
| CN102621805A (en) * | 2012-03-31 | 2012-08-01 | 合肥工业大学 | Method for preparing micro-nano-channels based on liquid-gas equilibrium polymer nano-channels self-building mechanism |
| CN102621805B (en) * | 2012-03-31 | 2013-04-03 | 合肥工业大学 | Method for preparing micro-nano-channels based on liquid-gas equilibrium polymer nano-channels self-building mechanism |
| CN102897709A (en) * | 2012-09-17 | 2013-01-30 | 大连理工大学 | Manufacturing method of low-cost micronano integrated structure |
| CN102897709B (en) * | 2012-09-17 | 2015-01-28 | 大连理工大学 | Manufacturing method of low-cost micronano integrated structure |
| CN102998901B (en) * | 2012-12-12 | 2015-03-18 | 中国科学院合肥物质科学研究院 | Preparation method of SU-8 nanofluid channel of integrated scale |
| CN102998901A (en) * | 2012-12-12 | 2013-03-27 | 中国科学院合肥物质科学研究院 | Preparation method of SU-8 nanofluid channel of integrated scale |
| CN103076284A (en) * | 2013-01-28 | 2013-05-01 | 中国科学院半导体研究所 | Fabrication method of optical micro-nano biosensor integrated with microfluidic system |
| CN103135342A (en) * | 2013-03-07 | 2013-06-05 | 中国科学院合肥物质科学研究院 | Method for manufacturing nanofluid channel of integrated scaleplate based on flexible template |
| CN106444276A (en) * | 2016-09-26 | 2017-02-22 | 合肥工业大学 | Manufacturing method of nano fluid channel for achieving controllable size by using double-layer adhesive |
| CN106501520A (en) * | 2016-10-18 | 2017-03-15 | 成都市亿泰科技有限公司 | A kind of illicit drugs inspection reagent paper based on microfluidic capillary structure and preparation method thereof |
| CN109164676A (en) * | 2018-10-31 | 2019-01-08 | 京东方科技集团股份有限公司 | Impression block and method for stamping |
| CN110108678A (en) * | 2019-04-19 | 2019-08-09 | 中国科学院苏州生物医学工程技术研究所 | A kind of fluorescence nano on-gauge plate and its preparation and application |
| CN110902647A (en) * | 2019-12-05 | 2020-03-24 | 深圳先进技术研究院 | Method for manufacturing nano channel with gradually changed size |
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