CN101767765B - Micro electromechanical element with protective ring and manufacture method thereof - Google Patents
Micro electromechanical element with protective ring and manufacture method thereof Download PDFInfo
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- CN101767765B CN101767765B CN 200910001736 CN200910001736A CN101767765B CN 101767765 B CN101767765 B CN 101767765B CN 200910001736 CN200910001736 CN 200910001736 CN 200910001736 A CN200910001736 A CN 200910001736A CN 101767765 B CN101767765 B CN 101767765B
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- dielectric layer
- protective ring
- top layer
- sidewall
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Abstract
The invention provides a micro electromechanical element with a protective ring and a manufacture method thereof. The micro electromechanical element provided with the protective ring comprises a base plate; a top metal layer part of which part forming a connecting pad; a top dielectric layer depositing on the base plate; a side wall surrounding the top of the connecting pad periphery and connected therewith, wherein the side wall forms an annular structure at the periphery of the connecting pad, and is made of anti-etch materials, the connecting pad is part of the top metal layer, the side wall has resistance to an etching agent etching the top dielectric layer, and the connecting pad is made of metals, thus the side wall protects the top dielectric layer isolated out of the annular structure, while the connecting pad protects dielectric material layers under the top metal layer; and a shielding layer arranged above the top dielectric layer and connected to the side wall, wherein the shielding layer is a composite material layer which is two layers or more than two, and one layer of the composite material layer is an insulation material.
Description
Technical field
The present invention relates to a kind of microcomputer electric component and its manufacture method, particularly a kind of microcomputer electric component and manufacture method with protective ring.
Background technology
Microcomputer electric component has various application, for example little sound pressure sensor, gyroscope, accelerometer etc.The micro electromechanical structure of microcomputer electric component often is positioned at the top of structure sheaf, therefore should be protected.The present invention namely is at this point, proposes a kind of microcomputer electric component and manufacture method with protective ring.
Summary of the invention
The objective of the invention is to overcome the deficiencies in the prior art and defective, propose a kind of microcomputer electric component with protective ring.
Another object of the present invention is to, propose a kind of manufacture method with microcomputer electric component of protective ring.
For reaching above-mentioned purpose, with regard to one of them viewpoint of the present invention, provide a kind of microcomputer electric component with protective ring, it comprises: substrate, finished transistor unit, part interconnect and micro electromechanical structure on it; Top layer metallic layer, its part constitutes a connection gasket; Be deposited on the top layer dielectric layer on this substrate, comprise the dielectric materials layer that is positioned at this top layer metallic layer below and the top layer dielectric layer that is positioned at this top layer metallic layer side; Top and the sidewall that joins with it around this connection gasket, this sidewall forms a loop configuration around this connection gasket, and this sidewall is formed by anti-etching material, wherein this connection gasket is the some of this top layer metallic layer, and this sidewall to the etchant of this top layer dielectric layer of etching have repellence, and the material of this connection gasket be metal, thus, this sidewall protection is terminated to the top layer dielectric layer in this loop configuration outside, and this connection gasket protection is positioned at the dielectric materials layer of this top layer metallic layer below; And shielding layer, be positioned at the top of this top layer dielectric layer, join with this sidewall, wherein this shielding layer is two-layer or two-layer above composite layer, and wherein one deck of this composite layer is insulating material.
Above-mentioned microcomputer electric component can further comprise shielding layer, is positioned at the top of this top layer dielectric layer, joins with this sidewall.This shielding layer and protective ring can be single or composite layer.
For reaching above-mentioned purpose, with regard to another viewpoint of the present invention, provide a kind of manufacture method with microcomputer electric component of protective ring, comprise: a substrate is provided, has finished transistor unit, part interconnect and micro electromechanical structure on it; Form dielectric layer, comprise underlying dielectric layer of material and top layer dielectric layer; Form top layer metallic layer, its part constitutes a connection gasket, and wherein this underlying dielectric layer of material is positioned at this top layer metallic layer below, and this top layer dielectric layer is positioned at this top layer metallic layer top and side; Use to the etchant of this top layer dielectric layer of etching have repellence material, the sidewall that forms around this connection gasket top and join with this connection gasket, constitute a loop configuration, the top layer dielectric layer is isolated a reserve area, and this reserve area is terminated to this loop configuration outside; And the formation shielding layer, be positioned at the top of this top layer dielectric layer, join with this sidewall, wherein this shielding layer is two-layer or two-layer above composite layer, and wherein one deck of this composite layer is insulating material.
Said method can further comprise: form shielding layer, be positioned at the top of this top layer dielectric layer, join with this sidewall.
Illustrate in detail below by specific embodiment, when the effect that is easier to understand purpose of the present invention, technology contents, characteristics and reaches.
Description of drawings
Figure 1A-1C marks one embodiment of the present of invention;
Fig. 2 marks an alternative embodiment of the invention.
Symbol description among the figure
12 substrates (having finished transistor unit, part interconnect and micro electromechanical structure)
14 top layer metallic layers
16 dielectric layers
18 protective rings
20 shielding layers
The upper strata of the compound shielding layer of 20A
The lower floor of the compound shielding layer of 20B
Embodiment
Graphic among the present invention all belongs to signal, mainly is intended to represent the relativeness in the structure, as for shape, thickness and width then not according to scale.
See also the connection gasket shown in Figure 1A-1C (bond pad) structure, wherein Figure 1B is the top view along the B--B line gained of Figure 1A, and Fig. 1 C is the top view along the C--C line gained of Figure 1A, and Figure 1A is the profile along the A--A hatching line gained of Figure 1B.Figure 1A shows, finishes transistor unit, partly above the microcomputer electric component substrate 12 of interconnect and micro electromechanical structure, is being provided with top layer metallic layer 14, with as connection gasket.Isolated by top layer dielectric layer 16 between top layer metallic layer 14 and same layer and lower metal (not shown), the material of top layer dielectric layer 16 for example is oxide, contains the advanced low-k materials of silicon dioxide as silicon dioxide or other.
Because in the microcomputer electric component manufacturing process, the necessary etching dielectric layer 16 of possibility is so characteristics of the present invention are: form protective ring 18 with anti-etching material, constitute the sidewall of connection gasket.Except the zone 100 that is opened, protective ring 18 is at other dielectric layer 16 of side direction sealing, so that protective effect to be provided.The shielding layer 20 that covers dielectric layer 16 tops also should be made with anti-etching material, with protection dielectric layer 16.Above what is called is anti-etching, refers to have barrier effect at the etching of dielectric layer 16, that is the etchant of etching dielectric layer 16 is had repellence.
Material on dielectric layer 16 is decided, and protective ring 18 and shielding layer 20 can be the single or composite layer that any etch-resistant material is made, but protective ring 18 and shielding layer 20 should not electrically conduct each other, forms short circuit to avoid connection gasket and integral member surface.Therefore, protective ring 18 and shielding layer 20 can not be conductive material simultaneously.With this understanding, the material of protective ring 18 for example can be metal, amorphous silicon, silicon nitride or silicon oxynitride etc.The material of shielding layer 20 for example can be metal, amorphous silicon, silicon nitride or silicon oxynitride etc.
Fig. 2 marks the second embodiment of the present invention, and the characteristics of present embodiment are: shielding layer 20 is for comprising the composite layer of upper strata 20A and the 20B of lower floor.Under this kind structure, the 20B of lower floor of compound shielding layer can provide the effect of strengthening adhesion, and whole shielding layer 20 is more combined closely with understructure; Or when protective ring 18 was conductive material, one of the upper strata 20A of compound shielding layer and the 20B of lower floor can provide insulating effect.In the present embodiment, the material of protective ring 18 for example can be metal, amorphous silicon, silicon nitride or silicon oxynitride etc.The material of upper strata shielding layer 20A for example can be metal, amorphous silicon, silicon nitride or silicon oxynitride etc.The material of the shielding layer 20B of lower floor for example can be metal (such as but not limited to as aluminium or copper), amorphous silicon, silicon nitride or silicon oxynitride etc.
Below at preferred embodiment the present invention is described, just the above for making those skilled in the art be easy to understand content of the present invention, is not to limit interest field of the present invention only.For those skilled in the art, when can in spirit of the present invention, thinking immediately and various equivalence variation.For example, compound shielding layer 20 can not include only two-layer, and can be the structure more than three layers.And for example, protective ring 18 can not only use homogenous material, and can use composite material.So all equalizations of doing according to concept of the present invention and spirit change or modify, and all should be included in the scope of claims of the present invention.
Claims (8)
1. microcomputer electric component with protective ring is characterized in that: comprise:
Substrate has been finished transistor unit, part interconnect and micro electromechanical structure on it;
Top layer metallic layer, its part constitutes a connection gasket;
Be deposited on the top layer dielectric layer on this substrate, comprise the dielectric materials layer that is positioned at this top layer metallic layer below and the top layer dielectric layer that is positioned at this top layer metallic layer side;
Top and the sidewall that joins with it around this connection gasket, this sidewall forms a loop configuration around this connection gasket, and this sidewall is formed by anti-etching material, wherein this connection gasket is the some of this top layer metallic layer, and this sidewall to the etchant of this top layer dielectric layer of etching have repellence, and the material of this connection gasket be metal, thus, this sidewall protection is terminated to the top layer dielectric layer in this loop configuration outside, and this connection gasket protection is positioned at the dielectric materials layer of this top layer metallic layer below; And
Shielding layer is positioned at the top of this top layer dielectric layer, joins with this sidewall, and wherein this shielding layer is two-layer or two-layer above composite layer, and wherein one deck of this composite layer is insulating material.
2. the microcomputer electric component with protective ring as claimed in claim 1, wherein, the material of this sidewall is selected from one of following or many persons: metal, amorphous silicon, silicon nitride or silicon oxynitride.
3. the microcomputer electric component with protective ring as claimed in claim 1, wherein, this top layer dielectric layer is oxide.
4. the microcomputer electric component with protective ring as claimed in claim 1, wherein, this shielding layer is two-layer or two-layer above composite layer, one deck is selected from one of following or many persons in addition: metal, amorphous silicon, silicon nitride or silicon oxynitride.
5. the manufacture method with microcomputer electric component of protective ring is characterized in that, comprises:
A substrate is provided, has finished transistor unit, part interconnect and micro electromechanical structure on it;
Form dielectric layer, comprise underlying dielectric layer of material and top layer dielectric layer;
Form top layer metallic layer, its part constitutes a connection gasket, and wherein this underlying dielectric layer of material is positioned at this top layer metallic layer below, and this top layer dielectric layer is positioned at this top layer metallic layer top and side;
Use to the etchant of this top layer dielectric layer of etching have repellence material, the sidewall that forms around this connection gasket top and join with this connection gasket, constitute a loop configuration, the top layer dielectric layer is isolated a reserve area, and this reserve area is terminated to this loop configuration outside; And
Form shielding layer, be positioned at the top of this top layer dielectric layer, join with this sidewall, wherein this shielding layer is two-layer or two-layer above composite layer, and wherein one deck of this composite layer is insulating material.
6. the manufacture method with microcomputer electric component of protective ring as claimed in claim 5, wherein, this side-wall material is selected from one of following or many persons: metal, amorphous silicon, silicon nitride or silicon oxynitride.
7. the manufacture method with microcomputer electric component of protective ring as claimed in claim 5, wherein, this top layer dielectric layer is oxide.
8. the manufacture method with microcomputer electric component of protective ring as claimed in claim 5, wherein, other one deck of this shielding layer is selected from one of following or many persons: metal, amorphous silicon, silicon nitride or silicon oxynitride.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN 200910001736 CN101767765B (en) | 2009-01-06 | 2009-01-06 | Micro electromechanical element with protective ring and manufacture method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 200910001736 CN101767765B (en) | 2009-01-06 | 2009-01-06 | Micro electromechanical element with protective ring and manufacture method thereof |
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| CN101767765A CN101767765A (en) | 2010-07-07 |
| CN101767765B true CN101767765B (en) | 2013-08-21 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6225145B1 (en) * | 1998-09-07 | 2001-05-01 | Electronics And Telecommunications Research Institute | Method of fabricating vacuum micro-structure |
| CN101177234A (en) * | 2006-11-08 | 2008-05-14 | 精工爱普生株式会社 | Electronic device and method for manufacturing thereof |
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2009
- 2009-01-06 CN CN 200910001736 patent/CN101767765B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6225145B1 (en) * | 1998-09-07 | 2001-05-01 | Electronics And Telecommunications Research Institute | Method of fabricating vacuum micro-structure |
| CN101177234A (en) * | 2006-11-08 | 2008-05-14 | 精工爱普生株式会社 | Electronic device and method for manufacturing thereof |
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| CN101767765A (en) | 2010-07-07 |
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