CN101728615B - Microwave circulator with thin-film exchange-coupled magnetic structure - Google Patents
Microwave circulator with thin-film exchange-coupled magnetic structure Download PDFInfo
- Publication number
- CN101728615B CN101728615B CN200910208171.2A CN200910208171A CN101728615B CN 101728615 B CN101728615 B CN 101728615B CN 200910208171 A CN200910208171 A CN 200910208171A CN 101728615 B CN101728615 B CN 101728615B
- Authority
- CN
- China
- Prior art keywords
- circulator
- ferromagnetic layer
- inverse ferric
- layer
- ferric magnetosphere
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 28
- 239000010409 thin film Substances 0.000 title abstract description 4
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 57
- 239000000463 material Substances 0.000 claims abstract description 18
- 230000005415 magnetization Effects 0.000 claims abstract description 17
- 238000010168 coupling process Methods 0.000 claims abstract description 10
- 238000005859 coupling reaction Methods 0.000 claims abstract description 10
- 229910045601 alloy Inorganic materials 0.000 claims description 13
- 239000000956 alloy Substances 0.000 claims description 13
- 239000004020 conductor Substances 0.000 claims description 9
- 230000008878 coupling Effects 0.000 claims description 9
- 229910052742 iron Inorganic materials 0.000 claims description 7
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 4
- ZGDWHDKHJKZZIQ-UHFFFAOYSA-N cobalt nickel Chemical compound [Co].[Ni].[Ni].[Ni] ZGDWHDKHJKZZIQ-UHFFFAOYSA-N 0.000 claims description 4
- 229910000428 cobalt oxide Inorganic materials 0.000 claims description 4
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 claims description 4
- 229910052741 iridium Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 4
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 4
- 229910052703 rhodium Inorganic materials 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims description 4
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- 230000005350 ferromagnetic resonance Effects 0.000 abstract description 13
- 230000005290 antiferromagnetic effect Effects 0.000 abstract description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 15
- 229910000859 α-Fe Inorganic materials 0.000 description 15
- 230000000903 blocking effect Effects 0.000 description 11
- SHMWNGFNWYELHA-UHFFFAOYSA-N iridium manganese Chemical compound [Mn].[Ir] SHMWNGFNWYELHA-UHFFFAOYSA-N 0.000 description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 9
- 238000000151 deposition Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 230000005303 antiferromagnetism Effects 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910003321 CoFe Inorganic materials 0.000 description 3
- 229910019041 PtMn Inorganic materials 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 230000002427 irreversible effect Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910015136 FeMn Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910003289 NiMn Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 241000519996 Teucrium chamaedrys Species 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000914 Mn alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000007799 cork Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000007737 ion beam deposition Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000005298 paramagnetic effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/32—Non-reciprocal transmission devices
- H01P1/38—Circulators
- H01P1/383—Junction circulators, e.g. Y-circulators
- H01P1/387—Strip line circulators
Landscapes
- Measuring Magnetic Variables (AREA)
Abstract
A microwave circulator uses a thin-film exchange-coupled structure to provide an in-plane magnetic field around the circulator. The exchange-coupled structure is a ferromagnetic layer having an in-plane magnetization oriented generally around the circulator and an antiferromagnetic layer exchange-coupled with the ferromagnetic layer that provides an exchange-bias field to the ferromagnetic layer. A plurality of electrically conductive ports are connected to the exchange-coupled structure. Each of the portions or legs of the circulator between the ports may have an electrical coil wrapped around it with each coil connected to an electrical current source. The ferromagnetic resonance (FMR) frequency of the exchange-coupled structure in the absence of an external magnetic field is determined by the properties of the material of ferromagnetic layer and the magnitude of the exchange-bias field due to the exchange-coupling of the ferromagnetic layer to the antiferromagnetic layer. If one or more of the optional coils is used, then the FMR frequency can be tuned by changing the current in the coil or coils to change the magnitude of the externally applied magnetic field.
Description
Technical field
The present invention relates generally to microwave circulator (microwave circulator), specifically, relates to the thin film microwave circulator.
Background technology
Microwave circulator is passive (passive) multiport electronic installation with irreversible method transmission microwave energy, for example in three port devices, the energy of entry port 1 mainly leaves from port 2, and the energy of entry port 2 leaves from port 3, and the energy of entry port 3 leaves from port one.The selection of port is arbitrarily, and circulator can be made along clockwise direction or in the counterclockwise direction circulation.Circulator can be used as the part at the antenna interface (antenna interface) in the sending/receiving system.During sending, can make energy flow to antenna (port 2) from transmitter (port one), and flow to receiver (port 3) at reception period from antenna (port 2).
Microwave circulator can be implemented by the planar configuration of using strip line (stripline) or microstrip (microstrip) technology, described strip line or microstrip technology adopt be positioned between two ground plane conductor (strip line) or with the planar resonant ferrite elements of single ground plane conductor (microstrip) coupling.Bulk ferrite material slab with appropriate size is positioned in the central area of circulator, and by the direction magnetization of external magnets along the ground plane that is approximately perpendicular to circulator.Magnet is permanent magnet both, also electromagnet.In the situation of electromagnet, need additional current sources (current supply) to make its coil electricity.At this moment, the magnetization of ferrite slab can be switched, can be with the circulator operator scheme from changing into clockwise counterclockwise by the magnetization of switching the ferrite slab.Ferrite material is chosen as and makes it have ferromagnetic resonance (FMR) frequency with the frequency of operation approximate match of microwave signal, thereby irreversible transmission path is provided between port.
Summary of the invention
Owing to need bulk ferrite material and permanent magnet, microwave circulator can not be integrated in the midget plant that needs compactedness and light weight.In addition, ferrite material is restricted to ferritic resonance frequency with the frequency of operation of circulator.Therefore, need a kind of tunable microwave circulator, it can be compatible with compact light weight film design, and can be integrated in the midget plant like a cork.
The present invention relates to provides around the microwave circulator of the in-plane magnetic field of circulator with film exchange-coupled structure part.This circulator is Multi-layer structure member, and it is between two ground planes and form the ring body of the continuous sealing that roughly is triangular shape or circular shape.The exchange-coupled structure part comprises ferromagnetic layer and inverse ferric magnetosphere, magnetization orientation is the ring body that roughly centers on structural member in the face of described ferromagnetic layer, described inverse ferric magnetosphere and described ferromagnetic layer exchange coupling provide exchange bias field (exchange bias field) to described ferromagnetic layer.Can use two inverse ferric magnetospheres, make ferromagnetic layer between these two inverse ferric magnetospheres, roughly to increase the exchange bias field to ferromagnetic layer.If structural member is the triangular shape shape, then Multi-layer structure member links to each other with a plurality of conduction ports at the vertex of a triangle place; If structural member is circular shape, then Multi-layer structure member on annulus roughly the position that separates of equal angles link to each other with a plurality of conduction ports.Part between port or the shank of structural member can be wound with electric coil separately, and each coil links to each other with current source.When one or more being energized in the coil, in the plane of ferromagnetic layer and around circulator, generate outside complementary field.The ferromagnetic resonance frequency of Multi-layer structure member depends on the ferromagnetic layer material character and the size of the exchange bias field that generates because of ferromagnetic layer and inverse ferric magnetosphere exchange coupling.Yet, if but used one or more in the selection coil, can change by changing electric current in the coil size of externally-applied magnetic field, thus tuning ferromagnetic resonance frequency.
Preferably, described inverse ferric magnetosphere is selected from the group that is made of following material: cobalt oxide; Nickel oxide; The cobalt-nickel alloy oxide; With contain Mn and be selected from the alloy of at least a element in the group that is consisted of by Pt, Rh, Ni, Fe, Ir and Pd.
For more fully understanding essence of the present invention and advantage, should be with reference to following detailed description and accompanying drawing.
Description of drawings
Fig. 1 is the exploded isometric view of existing microwave circulator.
Fig. 2 A is the vertical view that is the circulator of the present invention of triangular shape shape.
Fig. 2 B is the vertical view that is the circulator of the present invention of circular shape.
Fig. 3 be Fig. 2 A section A-A ' sectional view.
Fig. 4 be Fig. 2 A section B-B ' sectional view, show being connected of one of strip line port and triangle circulator of the present invention.
Fig. 5 is externally-applied magnetic field and the resonance frequency f of IrMn of the present invention (7nm)/Fe (10nm)/exchanged bias junctions member of IrMn (7nm) and Fe (10nm) controlling diaphragm
RBetween function relation figure.
Embodiment
Fig. 1 is the exploded isometric view of existing microwave circulator 10.Although it is generally acknowledged microwave band greatly about 0.3GHz between the 300GHz, for the purpose of the present invention, the microwave frequency range of paying close attention to is that about 5GHz is between the 30GHz.Circulator 10 comprises the first ground plane 12 and the second ground plane 14 that is formed by electric conducting material (normally copper).Conducting element 16 has port one, 2,3, and between ground plane 12 and 14.Circular ferrite dish (ferrite disc) 18 is between conducting element 16 and the first ground plane 12, and permanent magnet 20 is between conducting element 16 and the second ground plane 14.Ferrite dish 18 is magnetized by permanent magnet 20, and this permanent magnet 20 applies the external magnetic field perpendicular to ferrite dish 18.Because Faraday effect (Faraday effet), circulator 10 is irreversible.The character of ferrite dish 18 is chosen as its ferromagnetic resonance frequency and the frequency of operation of the specific microwave of executing is complementary.According to the direction of magnetization of magnet 20, be input to port one, 2, one of 3 microwave signal will along clockwise direction or counterclockwise be advanced.Circulator is as the part at the antenna interface in the sending/receiving system.For example, during sending, can make microwave energy flow to antenna (port 2) from transmitter (port one), and flow to receiver (port 3) at reception period from antenna (port 2).If the terminal of one of port is matched load (matched load), then circulator will operate as isolator (isolator), because signal can only advance towards a direction between last port.
Fig. 2 A is the vertical view of circulator of the present invention, show have three parts or shank 131,132,133 roughly triangular shape structural member 110.In the place that shank is connected with each other, structural member 110 has been connected to three stripline conductors 101,102,103 of circulator port effect.Although structural member 110 is illustrated as the triangular shape structural member, structural member 110 also can be roughly rounded or annular circular ring spare, and at this moment each shank 131,132,133 will be arc section or ring segment shape.Fig. 2 B is the vertical view of circulator of the present invention, shows the structural member 110 that roughly is circular.In triangular shape circulator and circular circulator, shank 131,132,133 all is connected with each other and forms continuous closed path, and stripline conductors 101,102,103 roughly equal angles ground is spaced apart around the center of structural member 110.
Can make circulator structural member 110 with the size of wide region relatively.Typical size range is as follows: the external dimensions of triangular shape structural member (or external diameter of circular ring spare) is about 5-20mm, and the leg widths in the circulator plane (or annular radial thickness of circular ring spare) is about 0.5-2mm.
But Fig. 3 be the section A-A that do not have situation figure below 2A of selection coil 155 ' sectional view, show each layer of the Multi-layer structure member that consists of preferred embodiment.Dielectric base 111 is formed by any suitable material, for example silicon dioxide, aluminium oxide, intrinsic silicon (intrinsic silicon), intrinsic germanium (intrinsic germanium) or intrinsic gallium arsenide (intrinsic gallium-arsenide) or ceramic material.Deposit in the substrate 111 on the first metal ground plane 112, the first metal ground plane 112 and be formed with the first clearance for insulation layer 113.Suitable clearance material is silica or aluminium oxide.Be formed with the exchange-coupled structure part (exchange-coupled structure) 170 that comprises inverse ferric magnetosphere 171 and ferromagnetic layer 172 on the first clearance layer 113.Can form optional Seed Layer 116 in clearance layer 113, consist of the growth of the layer of exchange-coupled structure part 170 with help.Ferromagnetic layer 172 is preferably the layer that mainly is made of iron (Fe), and inverse ferric magnetosphere 171 is preferably iridium manganese (IrMn) alloy.Inverse ferric magnetosphere 171 provides exchange bias field H to ferromagnetic layer 172
EXThe type species sublayer 116 that is used for IrMn is Ta/Cu, Ta/Ru or only is Cu or Ru.Exchange-coupled structure part 170 can comprise and is positioned on the ferromagnetic layer 172 to provide additional exchange biased optional the second inverse ferric magnetosphere 173.Can be at the top of exchange-coupled structure part 170 deposition cap layer (capping layer) 114 in case oxidation, for example by Ta, Al, Rh, Au, Pd, Pt, Ag or Ru forms layer.Compare with only using single inverse ferric magnetosphere, use two inverse ferric magnetospheres 171,173 that larger exchange bias field H will be provided on the two sides of ferromagnetic layer 172
EXAlternatively, can be in backside deposition first metal ground plane 112 of substrate 111, and at the front of dielectric base 111 deposition exchange-coupled structure part 170.In this case, dielectric base 111 is as the first clearance layer 113.
Then, offscreen method molded (lithographically pattern) by layer 116,170,114 form above-mentioned multilayer laminated, to limit the required form of structural member 110.Then, carry out etching (reactive ion etching (reactive-ion-etching for example, RIE)) or ion milling (ion milling), then remove resist (resist removal), thereby obtain being the structural member of required triangular shape shape or circular shape.Then, can come backfill structural member 110 with for example the second clearance for insulation layer 140, then come flat configuration part 110 by for example cmp (chemical-mechanical polishing, CMP).The suitable material that is used for clearance layer 140 comprises silica and aluminium oxide.Form optional the second metal ground plane 141 at the top of the second clearance for insulation layer 140, be preferably the Cu layer.These layers form by typical film deposition techniques, the combination of for example magnetron splash (magnetron sputtering), ion beam depositing (ion-beam deposition), evaporation (evaporation), molecular chemistry vapour deposition (MOCVD) or these technology.
H
EX=J
A/ M
Ft
FFormula (1)
If used optional the second inverse ferric magnetosphere 173, then the value of exchange bias field will be greater than the H in the formula (1)
EXIf material and the thickness of inverse ferric magnetosphere 171 and 173 are identical, then the value of exchange bias field will double.Yet, since two inverse ferric magnetospheres 171,173 microstructure difference, the exchange bias field that the exchange bias field that the second inverse ferric magnetosphere 173 generates generates less than the first inverse ferric magnetosphere 171 usually.Therefore, the value of exchange bias field is usually less than the H in the formula (1)
EX* 2.
Among Fig. 3 antiferromagnetic/ferromagnetic double-deck 171/172 is shown as inverse ferric magnetosphere 171 and is positioned at ferromagnetic layer 172 belows.Yet if do not use optional the second inverse ferric magnetosphere 173, inverse ferric magnetosphere 171 also can be positioned at ferromagnetic layer 172 tops.
To set up exchange biased direction for ferromagnetic layer, then must be oriented in the plane of ferromagnetic layer 172 and be oriented in the situation of external magnetic field of circular direction 104 of triangular shape or circular ring spare 110 in existence, in the temperature that is higher than antiferromagnet 171,173 blocking temperature (blocking temperature) structural member be annealed.Blocking temperature is the temperature when forming exchange coupling between ferromagnetic layer 172 and inverse ferric magnetosphere 171,173.This can finish by for example structural member being placed on to have on the permanent magnet array of identical shaped and geometry or the permanent-magnet clusters with circulator.Exchange biased for setting up, in the situation in the magnetic field that exists permanent magnet to produce, the structural member heating is surpassed blocking temperature, and cooling is lower than blocking temperature subsequently.For this reason, the Curie temperature of permanent magnet (Curie temperature) must be higher than the blocking temperature of antiferromagnet, so that they can not lose the direction of magnetization.
For alloys such as PtMn or NiMn is used as antiferromagnet, also be necessary annealing, still not exchange biased in order to set up, and be in order to make their chemistry in order.Then, the transformation of these alloy experience antiferromagnetic in opposite directions phases of paramagnetic (paramagnetic-to-antiferromagnetic phase).When being cooled to when being lower than inverse ferric magnetosphere 171,173 blocking temperature from being higher than inverse ferric magnetosphere 171,173 blocking temperature, the direction of magnetization of ferromagnetic layer 172 is set in the circular face on the direction 104 by inverse ferric magnetosphere 171,173 and is fixing.Perhaps, can be than the temperature deposited iron magnetosphere 172 and the inverse ferric magnetosphere 171,173 that stop that temperature is high, in order to just in inverse ferric magnetosphere 171,173, cause chemistry in order between depositional stage.Then, in having the plane that is oriented in ferromagnetic layer 172 that is produced by permanent magnet array and be oriented in the situation of external magnetic field of circular direction 104 of triangular shape or circular ring spare, from depositing temperature structural member is cooled to and is lower than blocking temperature.
Perhaps, for permanent-magnet clusters, if but circulator is equipped with selection coil 155-157, then can be via current source 165-167 to coil 155-157 power supply, this same required magnetic field that generates in the plane that is oriented in ferromagnetic layer 172 and be oriented to the circular direction 104 of triangular shape or circular ring spare 110.Exchange biased for setting up, in the situation that has the magnetic field that is produced by electromagnet, the structural member heating is surpassed blocking temperature, and cooling is lower than blocking temperature subsequently.
If the unordered antiferromagnet such as the chemistry such as IrMn or FeMn is used for inverse ferric magnetosphere 171,173, then needn't anneals.These materials just have antiferromagnetism in deposited.Can be oriented in the plane of ferromagnetic layer 172 and be oriented in the situation of external magnetic field of circular direction 104 in existence, deposited iron magnetosphere 172 and inverse ferric magnetosphere 171,173 be set up exchange biased.Yet, hope be to be oriented in the plane of ferromagnetic layer 172 and to be oriented in the situation of external magnetic field of circular direction 104 in existence, the deposition after annealing that adds is because this can increase bias-field H
EX
But if used selection coil 155-157, then can by respectively on shank 131-133 the winding around wire come manufacturing structure spare 110, perhaps come in the following manner manufacturing structure spare 110: use known thin film deposition and photoetching technique, with to make magnetic recording disk drive thin film inductive write head in the similar mode of the technology of film coil, come around shank molded coil part.In addition, also can provide the external magnetic field with coil 155-157 and current source 165-167, to set the direction of magnetization in the circular face as ferromagnetic layer 172 by the way.
Fig. 4 be Fig. 2 A section B-B ' sectional view, be used for illustrating such as being connected between the stripline conductors such as stripline conductors 103 and the Multi-layer structure member 110 that comprises exchange-coupled structure part 170.
But in the situation of the externally-applied magnetic field that does not for example apply by the selection coil 155-157 that links to each other with respective current sources 165-167, the ferromagnetic resonance frequency of Multi-layer structure member 110 is definite by the material character of ferromagnetic layer 172, for example its saturation magnetization (M
S), anisotropy field (H
A) and the exchange bias field (H because generating with inverse ferric magnetosphere 171,173 exchange couplings
EX).Yet, if but used the one or more selection coil 155-157 that link to each other with respective current sources 165-167, can come tuning ferromagnetic resonance frequency by impressed field H.Suppose triangle or annulus that easy magnetizing axis (easy axis of magnetization) limits along shank 131-133, namely on circular direction 104, ferromagnetic resonance frequency (f then
R) obtain by following formula:
Wherein, g is gyromagnetic ratio (gyromagnetic ratio), H
AAnd H
EXRespectively uniaxial anisotropy field and one-way exchange bias-field, and M
SIt is the saturation magnetization of ferromagnetic layer 172.Uniaxial anisotropy field H
AConsisted of by many factors, for example shape anisotropy, the magnetocrystalline anisotropy (magnetocrystalline anisotropy) that may exist and owing to the exchange biased rotatable anisotropy that forms to antiferromagnet.Rotatable anisotropy is by causing with the magnetic-coupled ferromagnetic crystal grain of rotatable antiferromagnetic crystal grain (grain).Rotatable anisotropy can consist of the major part of HA.
Since exchange biased unidirectional characteristic, resonance frequency f
ROn exchange biased direction with from exchange biased opposite direction be different oppositely.Therefore, for example, if exchange biased direction is set to clockwise direction (arrow 104 among Fig. 2 A-2B), then compare with the microwave signal of advancing in the counterclockwise direction, the microwave signal of advancing along clockwise direction will meet with at the different frequency place maximum attenuation.
Fig. 5 is externally-applied magnetic field and the resonance frequency f of IrMn (7nm)/Fe (10nm)/exchanged bias junctions member 170 of IrMn (7nm) and Fe (10nm is thick) controlling diaphragm
RBetween function relation figure.There is not in the situation in outfield the f of Fe controlling diaphragm
RBe about 5.5GHz, and the f of exchanged bias junctions member
RBe about 9GHz.This frequency rising of exchanged bias junctions member originates from exchange anisotropy and the rotatable anisotropy by exchange biased initiation.In addition, learn that from the scattering parameter data experiment as the function of impressed field the resonance frequency live width is dwindled along with the increase of external magnetic field, for example live width is about 5GHz when 0.2kOe, and live width is about 2.5GHz when 1kOe.Therefore, be obtaining narrow linewidth, is desirable but apply the external magnetic field with the selection coil 155-157 of belt current source 165-167.By changing the intensity in outfield, the ferromagnetic resonance frequency of the tuning circulator of energy, thereby the frequency of operation of the tuning circulator of energy.This is better than utilizing frequency of operation to be determined by ferrite material character and the prior art circulator of the ferrite slab that remains unchanged.
For example, if exchange biased direction forms the clockwise direction 104 shown in Fig. 2 A-2B, the resonance frequency of the microwave that then advances around structural member 110 along clockwise direction is:
And the resonance frequency of the microwave that advances around structural member 110 in the counterclockwise direction is:
Be in sending mode via strip line 101 with frequency f
R+The signal that enters circulator will be sent to antenna via strip line 102 along clockwise direction.Be in receiving mode and will be sent to receiver via strip line 103 along clockwise direction via the signal that strip line 102 enters circulator.With frequency f
R-The signal that enters circulator will transmit in the counterclockwise direction.At a distance in centering on f
R+Or f
R-Out-of-band signal will not be transmitted.
Because current source 165-167 can generate to corresponding coil 155-157 the electric current of different amounts, so can generate different magnetic field in different shank 131-133.Therefore, the resonance frequency of circulator each several part can be different.Therefore, can be different from from antenna via strip line 102 and 103 frequencies to the reception signal of receiver via strip line 101 and 102 frequencies to the transmitted signal of antenna from transmitter.If do not wish optionally to change the resonance frequency of each shank, then can twine single coil at whole triangular shape or circular ring spare, and this single coil is connected to the single current source.
If the terminal of one of port of circulator is matched load, then circulator can be used as isolator and operates.So frequency is at f
R+Or f
R-Signal can only between two remaining ports, advance along a direction.For example, if strip line 103 links to each other with matched load, then signal can be with frequency f
R+Advance to port one 02 from port one 01, and frequency is at f
R-Signal advance to port one 01 from port one 02.At a distance in centering on f
R+Or f
R-Out-of-band signal will not be transmitted.
Although specifically describe and showed the present invention with reference to preferred embodiment, what it should be appreciated by those skilled in the art is in the situation that does not deviate from the spirit and scope of the present invention, can make multiple variation to shape and part.Therefore, can think that disclosed invention only plays the example effect, its scope is limited by claims.
Claims (18)
1. circulator that is used for the guiding microwave signal comprises:
The first ground plane and the second ground plane that are formed by electric conducting material;
Multi-layer structure member between described the first ground plane and the second ground plane, this Multi-layer structure member forms the ring body of continuous sealing, and comprise ferromagnetic layer and inverse ferric magnetosphere, magnetization orientation is the ring body around described structural member in the face of described ferromagnetic layer, and described inverse ferric magnetosphere and described ferromagnetic layer exchange coupling are to provide exchange bias field to described ferromagnetic layer; With
A plurality of ports spaced apart and that link to each other with described Multi-layer structure member around described ring body.
2. circulator as claimed in claim 1, wherein, described ferromagnetic layer comprises the alloy that is made of Co and Fe.
3. circulator as claimed in claim 1, wherein, described ferromagnetic layer mainly is made of Fe.
4. circulator as claimed in claim 1, wherein, described inverse ferric magnetosphere is a kind of alloy, this alloy comprises Mn and is selected from least a element in the group that is made of Pt, Rh, Ni, Fe, Ir and Pd.
5. circulator as claimed in claim 4, wherein, described inverse ferric magnetosphere comprises the alloy that is made of Mn and Ir.
6. circulator as claimed in claim 1, wherein, described inverse ferric magnetosphere is selected from the group that is made of cobalt oxide, nickel oxide and cobalt-nickel alloy oxide.
7. circulator as claimed in claim 1, wherein, described the first ground plane and the second ground plane comprise the layer that mainly is made of Cu separately.
8. circulator as claimed in claim 1, wherein, described inverse ferric magnetosphere is the first inverse ferric magnetosphere with a Surface Contact of described ferromagnetic layer, comprises that in addition another Surface Contact with described ferromagnetic layer is to provide the second inverse ferric magnetosphere of exchange bias field to described ferromagnetic layer.
9. circulator as claimed in claim 1, wherein, described Multi-layer structure member roughly is the triangle with three interconnective shanks.
10. circulator as claimed in claim 1, wherein, described Multi-layer structure member roughly is the annular with three interconnective shanks.
11. circulator as claimed in claim 1, wherein, the part between described port of described Multi-layer structure member is shank, comprise in addition current source and be wrapped on the described shank and the conductive coil that links to each other with described current source, provide the magnetic field consistent with the magnetization orientation of described ferromagnetic layer along described shank behind the wherein said coil electricity.
12. a circulator that is used for the guiding microwave signal comprises:
The first ground plane and the second ground plane that are formed by electric conducting material;
Multi-layer structure member between described the first ground plane and the second ground plane, this Multi-layer structure member forms the ring body of continuous sealing, and roughly be triangular shape shape or circular shape, described structural member comprises ferromagnetic layer and inverse ferric magnetosphere, magnetization orientation is the ring body that roughly centers on described structural member in the face of described ferromagnetic layer, and described inverse ferric magnetosphere and described ferromagnetic layer exchange coupling are to provide exchange bias field to described ferromagnetic layer;
The a plurality of conduction ports that link to each other with described Multi-layer structure member, if described structural member is the triangular shape shape, then described port links to each other with described Multi-layer structure member at the vertex of a triangle place; If described structural member is circular shape, then the position that separates of the roughly equal angles of described port on annulus links to each other with described Multi-layer structure member, and wherein said structural member has shank between described port;
Be wrapped in the conductive coil on the described shank; With
Current source links to each other to come to described coil power supply with described coil, is arranged in the plane of described ferromagnetic layer and around the magnetic field of described ring body with generation.
13. circulator as claimed in claim 12, wherein, described coil comprises a plurality of coil segments, and each coil segment is wrapped on the shank that is associated, and comprises in addition one or more additional current sources, and each current source is connected with the coil segment that is associated.
14. circulator as claimed in claim 12, wherein, described ferromagnetic layer is to be selected from Fe or to contain Co and the material of the alloy of Fe.
15. circulator as claimed in claim 12, wherein, described inverse ferric magnetosphere is selected from the group that is made of following material: cobalt oxide; Nickel oxide; The cobalt-nickel alloy oxide; With contain Mn and be selected from the alloy of at least a element in the group that is consisted of by Pt, Rh, Ni, Fe, Ir and Pd.
16. circulator as claimed in claim 12, wherein, described the first ground plane and the second ground plane comprise the layer that mainly is made of Cu separately.
17. circulator as claimed in claim 12, wherein, described inverse ferric magnetosphere is the first inverse ferric magnetosphere with a Surface Contact of described ferromagnetic layer, comprises that in addition another Surface Contact with described ferromagnetic layer is to provide the second inverse ferric magnetosphere of exchange bias field to described ferromagnetic layer.
18. circulator as claimed in claim 12, wherein, the terminal of one of port of described circulator is matched load, and described circulator can be used as isolator and operates.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/260,001 | 2008-10-28 | ||
| US12/260,001 US7816994B2 (en) | 2008-10-28 | 2008-10-28 | Microwave circulator with thin-film exchange-coupled magnetic structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101728615A CN101728615A (en) | 2010-06-09 |
| CN101728615B true CN101728615B (en) | 2013-02-13 |
Family
ID=42116895
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910208171.2A Expired - Fee Related CN101728615B (en) | 2008-10-28 | 2009-10-28 | Microwave circulator with thin-film exchange-coupled magnetic structure |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US7816994B2 (en) |
| CN (1) | CN101728615B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FI123117B (en) | 2011-02-18 | 2012-11-15 | Sandvik Mining & Constr Oy | Control device for controlling a drill pipe |
| KR20160047503A (en) * | 2013-08-21 | 2016-05-02 | 보드 오브 레젼츠, 더 유니버시티 오브 텍사스 시스템 | Non-reciprocal acoustic devices based on linear or angular momentum biasing |
| CN111129676B (en) * | 2020-01-14 | 2022-01-21 | 中国电子科技集团公司第九研究所 | Method for improving harmonic suppression performance of circulator and circulator |
| CN115453215B (en) * | 2022-11-11 | 2023-03-21 | 中国科学技术大学 | Planar spin pumping microwave detector, preparation method and system |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5384556A (en) * | 1993-09-30 | 1995-01-24 | Raytheon Company | Microwave circulator apparatus and method |
| US6141571A (en) * | 1996-10-29 | 2000-10-31 | Massachusetts Institute Of Technology | Magnetically tunable ferrite microwave devices |
| US7170362B2 (en) * | 2004-07-20 | 2007-01-30 | M/A-Com, Inc. | Ferrite circulator having alignment members |
| US7362195B2 (en) * | 2005-04-08 | 2008-04-22 | University Of Delaware | Ferro magnetic metal-insulator multilayer radio frequency circulator |
-
2008
- 2008-10-28 US US12/260,001 patent/US7816994B2/en active Active
-
2009
- 2009-10-28 CN CN200910208171.2A patent/CN101728615B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US7816994B2 (en) | 2010-10-19 |
| CN101728615A (en) | 2010-06-09 |
| US20100102896A1 (en) | 2010-04-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9948267B2 (en) | Magnetoresistive effect device | |
| Skomski et al. | Predicting the future of permanent-magnet materials | |
| WO2019125388A1 (en) | Spin orbit coupling based oscillator using exchange bias | |
| US10727558B2 (en) | Shaped magnetic bias circulator | |
| US20170345449A1 (en) | Magnetoresistive effect device | |
| US10957962B2 (en) | Magnetoresistive effect device | |
| JP6186879B2 (en) | Thin film magnetic element | |
| Yang et al. | Low-loss magnetically tunable bandpass filters with YIG films | |
| CN101728615B (en) | Microwave circulator with thin-film exchange-coupled magnetic structure | |
| CN111030637A (en) | Multi-spectrum integrated spinning nanooscillator for 5G communication and preparation method thereof | |
| US10804870B2 (en) | Magnetoresistance effect device and high frequency device | |
| US5665465A (en) | Article comprising exchange-coupled magnetic materials | |
| CN102652348B (en) | On chip integrated inductor and manufacturing method therefor | |
| US10984938B2 (en) | Magnetoresistance effect device | |
| Persson et al. | Spin-torque oscillator in an electromagnet package | |
| US10818990B2 (en) | Magnetoresistance effect device and magnetoresistance effect module | |
| JP2006005887A (en) | Microwave transmission line and microwave filter | |
| JP4412549B2 (en) | Distributed constant type irreversible device and garnet single crystal for distributed constant type irreversible device | |
| US7385469B2 (en) | Integrated microelectronics component for filtering electromagnetic noise and radio frequency transmission circuit comprising same | |
| US11165128B1 (en) | High-frequency device | |
| JP2019186280A (en) | Magnetoresistive effect device | |
| JP2006101240A (en) | High frequency filter | |
| JP2019134409A (en) | Magnetoresistive effect device and magnetoresistive effect module | |
| Celinski et al. | Physics of Magnetic Multilayers and Devices at Millimeter Wave Frequencies | |
| Kuanr et al. | On-wafer band-stop and band-pass microwave filters based on ferromagnetic resonance |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: HGST NETHERLANDS BV Free format text: FORMER NAME: HITACHI GLOBAL STORAGE TECH |
|
| CP01 | Change in the name or title of a patent holder |
Address after: Amsterdam Patentee after: Hitachi Global Storage Technologies Netherlands B. V. Address before: Amsterdam Patentee before: Hitachi Global Storage Tech |
|
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130213 Termination date: 20131028 |