CN101715041B - Method for controlling semiconductor photosensitive component - Google Patents
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- CN101715041B CN101715041B CN200910234799XA CN200910234799A CN101715041B CN 101715041 B CN101715041 B CN 101715041B CN 200910234799X A CN200910234799X A CN 200910234799XA CN 200910234799 A CN200910234799 A CN 200910234799A CN 101715041 B CN101715041 B CN 101715041B
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Abstract
The invention discloses a semiconductor photosensitive component comprising a source electrode, a drain electrode, a control grid electrode, a floating grid region, an underlay and a p-n junction diode used for connecting the floating grid region and the drain electrode, wherein the floating grid region of the semiconductor component is used for storing electric charges. The floating grid potential of the semiconductor component is relevant to radiation intensity and time of light, so that the semiconductor component can serve as the semiconductor photosensitive component. An array can be formed by the semiconductor photosensitive component, thereby forming am image sensor. The invention discloses a method for controlling the semiconductor photosensitive component, comprising the following steps of: resetting, light sensation and reading. The semiconductor photosensitive component can simplify the design of single pixel unit in the traditional image sensor and reduce the area occupied by the single pixel unit, thereby increasing the pixel density of an image sensing chip, increasing the resolution of the image sensing chip and reducing the manufacture cost; moreover, the control method and a control circuit are simpler.
Description
Technical field
The present invention relates to a kind of semiconductor light-sensing device and array, the structure of particularly a kind of semiconductor light-sensing device and array and its manufacture method.The invention still further relates to the operating principle of a kind of semiconductor light-sensing device and array.
Background technology
Imageing sensor is to be used for light signal is converted to the semiconductor device of the signal of telecommunication, and the image sensor chip of being made up of image sensor devices (Image Sensor) is widely used in the media products such as digital camera, video camera and mobile phone.
Imageing sensor mainly contains two kinds at present: charge coupled device (Charge Coupled Device, CCD) imageing sensor and CMOS (Complementary Metal-Oxide-Semiconductor) imageing sensor.Charge coupled device has advantages such as picture quality height, noise are little, but its production cost is also higher, simultaneously should not be integrated with peripheral circuit.Cmos image sensor integrated level height, little, low in energy consumption, the wide dynamic range of volume, and can with current manufacturing process compatibility, and have the condition that height system is integrated.Therefore, cmos image sensor has become the development focus in recent years.
Cmos image sensor comprises a plurality of MOS transistor and is used as the parts such as signal processing circuit of peripheral circuit, and utilizes the CMOS technology that it is incorporated on the Semiconductor substrate.The photo-sensitive cell of traditional cmos imageing sensor core partly is that single pixel mainly is made up of a back biased diode and amplification metal-oxide-semiconductor, detects the output of constituent parts pixel successively by MOS transistor.
Fig. 1 and Fig. 2 have showed the circuit composition of the single pixel cell of 2 kinds of existing C mos image sensors.
With reference to Fig. 1, the single pixel cell of this cmos image sensor has 4 metal-oxide-semiconductors, specifically comprises: photodiode (PD), electric charge overflow pipe (TG), a reset transistor (RST), source follower (SF) and select transistor (RS).Its course of work is: at first enter " reset mode ", reset transistor RST conducting resets to photodiode.Enter " sampling state " then, reset transistor RST closes, and illumination is mapped to and produces photo-generated carrier on the photodiode, and amplifies output by source follower SF; Enter " reading state " at last, at this moment select transistor (RS) to open, signal is exported by column bus.
With reference to Fig. 2, the pixel cell of this cmos image sensor can be considered as the structure improvement in form of Fig. 1.It is parallel with one another that 4 electric charges overflow the combination of a pipe (TG) and photodiode, a shared reset transistor, source follower and selection transistor.The operation principle of single pixel is identical with Fig. 1.
From the technology trends of product, no matter be ccd image sensor or cmos image sensor, volume miniaturization, high reliability and high pixelation are the actively targets of research and development of industry always.Above in two kinds of technology, each pixel cell has also used a plurality of transistors except photodiode.For Fig. 1, each pixel cell all has 4 transistors that work alone, and has occupied bigger Substrate Area, and pixel is lower, and product resolution is not high; Fig. 2 has improved the pixel of imageing sensor to a certain extent, but because transistor and photodiode are more in the pixel cell, it is complicated that the CMOS photosensitive circuit becomes, and correspondingly also makes the complicated of peripheral control circuit, and the reliability of imageing sensor reduces simultaneously.
Summary of the invention
The technical problem to be solved in the present invention is to reduce the circuit complexity of single pixel cell in the cmos image sensor, improves the pixel of imageing sensor.For solving the problems of the technologies described above, the present invention proposes a kind of novel semiconductor light-sensing device and array thereof, the method for controlling this semiconductor light-sensing device is provided simultaneously.
Any one in the source region of semiconductor light-sensing device and the many source lines is connected, any one in its drain region and the multiple bit lines is connected, any one in its control grid and many word lines is connected, its floating gate region store charge, described floating gate region carries out capacitive coupling by described drain region and control grid, and a light sensitive diode that is used to connect described floating gate region and described drain region, the control method of described semiconductor light-sensing device comprises following steps:
To a step that resets in a plurality of semiconductor light-sensing devices:
The source line that is connected with described semiconductor light-sensing device is applied first voltage;
The word line that is connected with described semiconductor light-sensing device is applied second voltage, and the bit line that is connected with described semiconductor light-sensing device applied the 3rd voltage, make the described light sensitive diode forward bias in the described semiconductor light-sensing device thus, this semiconductor light-sensing device is reset;
To a step of carrying out sensitization in a plurality of semiconductor light-sensing devices:
The source line that is connected with described semiconductor light-sensing device is applied first voltage;
The word line that is connected with described semiconductor light-sensing device is applied the 4th voltage, and the bit line that is connected with described semiconductor light-sensing device is applied the 5th voltage, make the gate control diode of described semiconductor light-sensing device be in reverse-bias state thus;
Expose, the drain region and the photogenerated current between the floating gate region of semiconductor light-sensing device can change the floating boom electromotive force, make the threshold voltage variation of described semiconductor light-sensing device;
To a step that reads in a plurality of semiconductor light-sensing devices:
The source line that is connected with described semiconductor light-sensing device is applied first voltage;
The word line that is connected with described semiconductor light-sensing device is applied the 6th voltage, and the bit line that is connected with described semiconductor light-sensing device is applied the 7th voltage, read electric current, judge exposure intensity according to size of current by source region and drain region.
Further, described first voltage range be-1V is to 1V; Described second voltage range be-1V is to 10V; Described the 3rd voltage range is that 1V arrives-5V; Described the 4th voltage range be-2V is to 5V; Described the 5th voltage range be-2V is to 4V; Described the 6th voltage range is that 0V is to 10V; Described the 7th voltage range be-2V is to 4V.
Further, described semiconductor light-sensing device comprises a Semiconductor substrate with first kind of doping type; The source region with second kind of doping type and the drain region that on described Semiconductor substrate, form; A channel region between described source region and drain region that in described Semiconductor substrate, forms; The ground floor insulation film of the whole channel region of covering that on described channel region, forms; A floating gate region that on this ground floor insulation film, forms with conductivity as charge-storage node; Connect by a sensitization p-n junction diode that is used for sensitization between described floating gate region and the described drain region; Cover the second layer insulation film on the described floating gate region; And the control grid that on described second layer insulation film, forms.
Further, form the well region between described channel region and drain region in the described Semiconductor substrate with second kind of doping type, formation one has the contra-doping zone of the doping type opposite with described well region in described well region, and described well region and contra-doping zone thereof form a sensitization p-n junction diode.
Further, described first kind of doping type is p type doping impurity, and second kind of doping type is n type doping impurity; Perhaps, described first kind of doping type is n type doping impurity; Second kind of doping type is p type doping impurity.
Further, described sensitization p-n junction diode is silica-based p-n homojunction, or the heterojunction that is combined to form by SiGe, InGaAs, GaN, GaAs and Si.
Further, described Semiconductor substrate is monocrystalline silicon, silicon-on-insulator, SiGe or GaAs.
Further, described insulation film is that insulator by silicon dioxide, silicon nitride, silicon oxynitride or high-k forms.
Further, described floating gate region is to be formed by polysilicon, tungsten, titanium nitride, tantalum nitride or alloy material, and the thickness range of the conductor layer of its formation is the 20-300 nanometer.
Further, by controlling the luminous intensity that is subjected to of described sensitization p-n junction diode, adopt its photoelectric effect to control and floating be stored in the electric charge in the floating gate region and the electromotive force of floating gate region, and then the size of the electric current between changing described semiconductor light-sensing device source electrode and draining.
Further, by controlling the voltage of described control gate, adopt the electric charge induction principle to control described floating gate region electromotive force.
The beneficial effect that semiconductor light-sensing device of the present invention had is: the design of the pixel cell of traditional imageing sensor is reduced to single sensor devices from the cmos circuit of complexity, thereby can on silicon substrate of the same area, make more pixel cell, obtain higher image resolution ratio.On the other hand, the semiconductor light-sensing device that the present invention proposes and the control method of array are comparatively simple, and be reliable.
Description of drawings
The present invention is further detailed explanation below in conjunction with accompanying drawing and embodiment:
Fig. 1 and Fig. 2 are the circuit diagrams of the single pixel cell of existing C mos image sensor;
Fig. 3 is the profile of an embodiment of semiconductor light-sensing device of the present invention;
Fig. 4 is the equivalent electric circuit of semiconductor light-sensing device shown in Figure 3;
Fig. 5 is the structure chart of the semiconductor light-sensing device array in one embodiment of the present of invention.
Fig. 6 is the imageing sensor structural map in one embodiment of the present of invention.
Embodiment
Hereinafter, describe three illustrative embodiments of the present invention with reference to the accompanying drawings in detail.In the drawings, for convenience of description, amplified the thickness in layer and zone, shown in size do not represent actual size.Reference diagram is the schematic diagram of idealized embodiment of the present invention, and embodiment shown in the present should not be considered to only limit to the given shape in zone shown in the figure, but comprises resulting shape, the deviation that causes such as manufacturing.For example the curve that obtains of etching has crooked or mellow and full characteristics usually, but in embodiments of the present invention, all represents with rectangle, and the expression among the figure is schematically, but this should not be considered to limit the scope of the invention.Simultaneously in the following description, employed term wafer and substrate can be understood as and comprise the just semiconductor wafer in processes, may comprise other prepared thin layer thereon.
Fig. 3 is the semiconductor light-sensing device 10 among the embodiment disclosed in this invention, and it is the profile along this device channel length direction.Semiconductor light-sensing device in the following description is called as FJG (Floating JunctionGate) sensor devices.FJG sensor devices 10 forms in the trap 500 of a Semiconductor substrate or doping usually, the trap of described Semiconductor substrate or doping generally mix low concentration n type or p type impurity, FJG sensor devices both sides by shallow isolating trough (STI) 501 or local oxidation of silicon (LOCOS) with isolated on every side.Described Semiconductor substrate is monocrystalline silicon or silicon-on-insulator.The doping type in drain region 514 and source region 511 is opposite with the doping type of substrate or trap 500 usually.Raceway groove 512 is usually located within substrate or the trap.Drain region 514 can be connected with outer electrode by contact 513 as the drain electrode of a MOSFET.Source region 511 can be connected with outer electrode by contact 510 as the source electrode of a MOSFET.
Between described channel region 512 and ditch isolation (STI) 501 is well region 503, and its doping type is identical with source region and drain region usually.Contra-doping district 502 is positioned at well region 503, has the doping type opposite with well region 503, thereby has formed a p-n junction diode.Form the ground floor dielectric film 506 that covers whole channel region on the channel region 512.Floating gate region with conductivity 505 that on this ground floor dielectric film, forms as charge-storage node.Floating gate region 505 can be used as the floating grid of a MOSFET, by it being applied the voltages of different sizes, can control flows crosses the current density of raceway groove 512.Floating gate region 505 is opposite with the doping attribute in drain region 514 usually, and for example, floating gate region 505 is formed by the polysilicon that the p type mixes, and drain region 514 then is mixed with n type impurity.Floating gate region 505 contacts with contra-doping district 502 by the window in the dielectric film 506 504.Therefore floating gate region 505 also with by contra-doping district 502 links to each other with the p-n junction that well region 503 forms, and is called the part of this " floating junction ", so semiconductor light-sensing device shown in Figure 3 is called FJG (floating junction) sensor devices.Second layer insulation film 509 covers on the floating gate region 505, and is forming control grid 507 and side wall 508 on second layer dielectric film 509.
In order to describe the 26S Proteasome Structure and Function of FJG sensor devices disclosed by the invention, Fig. 4 has showed the equivalent electric circuit of described FJG sensor devices.Described FJG sensor devices has comprised floating gate region MOSFET 402 by one and a light sensitive diode 404 is formed.The FJG sensor devices merges floating-gate MOS FET and light sensitive diode.Before sensitization, bit line 405 is set resets for low level makes the grid voltage of this FJG sensor devices.When sensitization, give 405 1 higher level of bit line, make light sensitive diode 404 partially anti-.In light sensitive diode, produce photogenerated current by illumination, floating gate region 403 is charged, change the electromotive force of floating gate region 403, cause the threshold voltage variation of metal-oxide-semiconductor 402.When reading, after word line 401 was chosen this sensor devices, by bit line 405 read currents, the size of electric current had reflected the intensity of illumination.
Fig. 5 is the profile that has formed behind each contact electrode, and wherein 515 are the illumination schematic diagram.
The semiconductor light-sensing device that the present invention proposes can be formed sensor devices array 1202.As shown in figure 10, this array is by a plurality of described semiconductor light-sensing devices, many word lines, multiple bit lines and many source lines are formed, any 1203-1 in wherein said many word lines 1203 and the combination of any 1204-2 in the multiple bit lines 1204 can select to control described semiconductor light-sensing device 1201-1-2, any one in the described many source lines is connected with one source region in described a plurality of semiconductor light-sensing devices 1201, any one in described many word lines 1203 is connected with one of them control grid in described a plurality of semiconductor light-sensing devices 1201, and any one in the described multiple bit lines 1204 is connected with one of them drain region in described a plurality of semiconductor light-sensing devices 1201.Promptly as shown in the figure, the control grid of one of them semiconductor light-sensing device 1201-1-2 is connected with word line 1203-1, and its drain region is connected with bit line 1204-2, and its source region connects with source line (the source line is vertical with this array in this example, because this is not shown); Other each semiconductor light-sensing devices also all can be selected control by any one word line 1203 and any one bit line 1204 in the sensor devices array 1202, and the connected mode of this semiconductor light-sensing device also by that analogy.
The semiconductor light-sensing device array that the present invention proposes can be integrated with logic control circuit, thereby constitute an image sensor chip.As shown in Figure 6, an image sensor chip 1301 is made up of at least one semiconductor light-sensing device array 1202 and at least one logic control circuit 1303.Logic control circuit 1303 can be controlled and exchanges data semiconductor light-sensing device array 1202.Such as, before chip sensitization, logic control circuit 1303 sends order, and all semiconductor light-sensing devices that carry out in the semiconductor light-sensing device array 1202 are resetted.Afterwards, image sensor chip 1301 is exposed.Behind end exposure, logic control circuit 1303 sends order, thereby each semiconductor light-sensing device in the semiconductor light-sensing device array 1202 is carried out data read and analyze obtaining image.
Specifically, the sensitization method in the described semiconductor light-sensing device comprise reset, sensitization and read three steps.
To a step that resets in a plurality of semiconductor light-sensing devices:
The source line that is connected with described semiconductor light-sensing device is applied first voltage;
The word line that is connected with described semiconductor light-sensing device is applied second voltage, and the bit line that is connected with described semiconductor light-sensing device applied the 3rd voltage, make the described light sensitive diode forward bias in the described semiconductor light-sensing device thus, this semiconductor light-sensing device is reset;
To a step of carrying out sensitization in a plurality of semiconductor light-sensing devices:
The source line that is connected with described semiconductor light-sensing device is applied first voltage;
The word line that is connected with described semiconductor light-sensing device is applied the 4th voltage, and the bit line that is connected with described semiconductor light-sensing device is applied the 5th voltage, make the gate control diode of described semiconductor light-sensing device be in reverse-bias state thus;
Expose, the drain region and the photogenerated current between the floating gate region of semiconductor light-sensing device can change the floating boom electromotive force, make the threshold voltage variation of described semiconductor light-sensing device;
To a step that reads in a plurality of semiconductor light-sensing devices:
The source line that is connected with described semiconductor light-sensing device is applied first voltage;
The word line that is connected with described semiconductor light-sensing device is applied the 6th voltage, and the bit line that is connected with described semiconductor light-sensing device is applied the 7th voltage, read electric current, judge exposure intensity according to size of current by source region and drain region.
Described first voltage range is-1V is to 1V; Described second voltage range be-1V is to 10V; Described the 3rd voltage range is that 1V arrives-5V; Described the 4th voltage range be-2V is to 5V; Described the 5th voltage range be-2V is to 4V; Described the 6th voltage range is that 0V is to 10V; Described the 7th voltage range be-2V is to 4V.
As mentioned above, under the situation that does not depart from spirit and scope of the invention, can also constitute many very embodiment of big difference that have.Should be appreciated that except as defined by the appended claims, the invention is not restricted at the instantiation described in the specification.
Claims (10)
1. the control method of a semiconductor light-sensing device, it is characterized in that: any one in the source region of described semiconductor light-sensing device and the many source lines is connected, any one in its drain region and the multiple bit lines is connected, any one in its control grid and many word lines is connected, its floating gate region store charge, described floating gate region can not carry out capacitive coupling by described drain region and control grid, and a light sensitive diode that is used to connect described floating gate region and described drain region, its control method comprises following steps:
To a step that resets in a plurality of semiconductor light-sensing devices:
The source line that is connected with described semiconductor light-sensing device is applied first voltage;
The word line that is connected with described semiconductor light-sensing device is applied second voltage, and the bit line that is connected with described semiconductor light-sensing device applied the 3rd voltage, make the described light sensitive diode forward bias in the described semiconductor light-sensing device thus, this semiconductor light-sensing device is reset;
To a step of carrying out sensitization in a plurality of semiconductor light-sensing devices:
The source line that is connected with described semiconductor light-sensing device is applied first voltage;
The word line that is connected with described semiconductor light-sensing device is applied the 4th voltage, and the bit line that is connected with described semiconductor light-sensing device is applied the 5th voltage, make the light sensitive diode of described semiconductor light-sensing device be in reverse-bias state thus;
Expose, the drain region and the photogenerated current between the floating gate region of semiconductor light-sensing device can change the floating boom electromotive force, make the threshold voltage variation of described semiconductor light-sensing device;
To a step that reads in a plurality of semiconductor light-sensing devices:
The source line that is connected with described semiconductor light-sensing device is applied first voltage;
The word line that is connected with described semiconductor light-sensing device is applied the 6th voltage, and the bit line that is connected with described semiconductor light-sensing device is applied the 7th voltage, read electric current, judge exposure intensity according to size of current by source region and drain region.
2. the control method of semiconductor light-sensing device as claimed in claim 1 is characterized in that: described first voltage range for-1V to 1V; Described second voltage range be-1V is to 10V; Described the 3rd voltage range is that 1V arrives-5V; Described the 4th voltage range be-2V is to 5V; Described the 5th voltage range be-2V is to 4V; Described the 6th voltage range is that 0V is to 10V; Described the 7th voltage range be-2V is to 4V.
3. the control method of semiconductor light-sensing device as claimed in claim 1, it is characterized in that: described semiconductor light-sensing device comprises a Semiconductor substrate with first kind of doping type;
The source region with second kind of doping type and the drain region that on described Semiconductor substrate, form;
A channel region between described source region and drain region that in described Semiconductor substrate, forms;
The ground floor insulation film of the whole channel region of covering that on described channel region, forms;
A floating gate region that on this ground floor insulation film, forms with conductivity as charge-storage node;
Connect by a sensitization p-n junction diode that is used for sensitization between described floating gate region and the described drain region;
Cover the second layer insulation film on the described floating gate region;
And the control grid that on described second layer insulation film, forms.
4. the control method of semiconductor light-sensing device as claimed in claim 3, it is characterized in that: form the well region between described channel region and drain region in the described Semiconductor substrate with second kind of doping type, formation one has the contra-doping zone of the doping type opposite with described well region in described well region, and described well region and contra-doping zone thereof form a sensitization p-n junction diode.
5. the control method of semiconductor light-sensing device as claimed in claim 4, it is characterized in that: described first kind of doping type is p type doping impurity, second kind of doping type is n type doping impurity; Perhaps, described first kind of doping type is n type doping impurity; Second kind of doping type is p type doping impurity.
6. the control method of semiconductor light-sensing device as claimed in claim 5, it is characterized in that: described sensitization p-n junction diode is silica-based p-n homojunction, or the heterojunction that is combined to form by SiGe, InGaAs, GaN, GaAs and Si.
7. the control method of semiconductor light-sensing device as claimed in claim 6, it is characterized in that: described Semiconductor substrate is monocrystalline silicon, silicon-on-insulator, SiGe or GaAs.
8. the control method of semiconductor light-sensing device as claimed in claim 7 is characterized in that: described insulation film is that the insulator by silicon dioxide, silicon nitride, silicon oxynitride or high-k forms.
9. the control method of semiconductor light-sensing device as claimed in claim 8, it is characterized in that: described floating gate region is to be formed by polysilicon, tungsten, titanium nitride, tantalum nitride or alloy material, the thickness range of the conductor layer of its formation is the 20-300 nanometer.
10. the control method of semiconductor light-sensing device as claimed in claim 1 is characterized in that: be subjected to luminous intensity and the time of described sensitization p-n junction diode are come record by the variation of the electromotive force of electric charge in the floating gate region and floating gate region.
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| EP2839633B1 (en) * | 2012-04-18 | 2019-03-20 | Brightway Vision Ltd. | Mulitple gated pixel per readout |
| US9723233B2 (en) | 2012-04-18 | 2017-08-01 | Brightway Vision Ltd. | Controllable gated sensor |
| CN103579275A (en) * | 2013-11-06 | 2014-02-12 | 复旦大学 | Semi-floating gate photoreceptor manufacturing method |
| CN103594477B (en) * | 2013-11-06 | 2016-03-30 | 复旦大学 | A kind of semiconductor light-sensing device and manufacture method thereof |
| CN107658321B (en) * | 2016-07-25 | 2019-12-27 | 南京威派视半导体技术有限公司 | Dual-device photosensitive detection unit based on composite dielectric grid, detector and method thereof |
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| CN1627435A (en) * | 2003-12-11 | 2005-06-15 | 国际商业机器公司 | Gated diode memory cells and write method |
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Address after: Xinghu Street Industrial Park of Suzhou city in Jiangsu province 215021 No. 218 nano technology park C1 group B building 201 room Patentee after: Suzhou Dongwei Semiconductor Co.,Ltd. Address before: Xinghu Street Industrial Park of Suzhou city in Jiangsu province 215021 No. 218 nano technology park C1 group B building 201 room Patentee before: SU ZHOU ORIENTAL SEMICONDUCTOR Co.,Ltd. |
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