CN101697339B - Mechanism for monitoring CMP sinking degree of damascene and resistivity test method thereof - Google Patents
Mechanism for monitoring CMP sinking degree of damascene and resistivity test method thereof Download PDFInfo
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- CN101697339B CN101697339B CN2009101978114A CN200910197811A CN101697339B CN 101697339 B CN101697339 B CN 101697339B CN 2009101978114 A CN2009101978114 A CN 2009101978114A CN 200910197811 A CN200910197811 A CN 200910197811A CN 101697339 B CN101697339 B CN 101697339B
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Abstract
The invention provides a mechanism for monitoring the CMP sinking degree of a damascene structure, which comprises a lead, a low-voltage applying end and a high-voltage applying end which are positioned at two ends of the lead, wherein at least four potential detection ends are arranged between the low-voltage applying end and the high-voltage applying end and a detected lead is arranged between every two adjacent potential detection ends. Meanwhile, the invention relates to a damascene resistivity test method. The invention solves the problem that the traditional method can not be conveniently used for detecting the CMP sinking degree and the resistivity of the damascene.
Description
Technical field
The present invention relates to the detection of the small resistor in the semiconductor manufacturing and the monitoring of chemico-mechanical polishing degree, concrete, relate to mechanism for monitoring and Damascus method for testing resistance of monitoring CMP sinking degree of damascene.
Background technology
Along with developing rapidly of semiconductor chip, the microminiaturization of chip has become main trend, and through damascene structure and chemico-mechanical polishing (CMP) technology, rewiring or the interconnection of accomplishing circuit more and more cause the attention of each big manufacturer.
Copper, tungsten or aluminium are used for damascene structure in a large number, and still, the deposition of copper, tungsten or aluminium does not all have selectivity; Except that via area; Non-via area also can deposit a certain amount of copper or tungsten, therefore, need remove unnecessary copper, tungsten or aluminium with chemico-mechanical polishing; This just depression occurs in the metal wire compact district of copper, tungsten or aluminium inevitably and crosses and throw, however this sinking degree but never very easily technological means monitor.
Fig. 1 is the profile of metal wire compact district after the existing chemico-mechanical polishing.With reference to shown in Figure 1, first metal line layer 102 is connected with the metal wire 108 of metal wire compact district through via hole 110, and independent via hole 106 is all adjacent with barrier layer 104 with metal wire 108.Can find out by Fig. 1; Metal wire compact district at metal wire 108 places; After the process chemico-mechanical polishing; Every metal line 108 (Damascus forms through the polishing back) has damage in various degree, but this damaged condition does not also have a kind of good way to monitor at present, and this damaged condition is characterizing the chemico-mechanical polishing degree of damascene structure.
Fig. 2 is the sketch map of existing Kelvin's four line structure measuring resistances.When the measured resistance resistance hour; The resistance of test lead is compared with measured resistance and can not be ignored with the contact resistance of test point with probe; If still adopt two wire testing methods then test error can increase; At this moment, adopt Kelvin's four line structures to come measuring resistance can obtain a relatively accurate resistance value.
The material that electronegative potential detection line SL and low-voltage apply line FL is a polysilicon, and the material that high potential applies line FH and high potential detection line SH is copper or tungsten.Kelvin's four line structures shown in Figure 2 can be measured the intersection point that electronegative potential detection line SL and low-voltage apply line FL, and high potential applies the measured resistance R between the intersection point of line FH and high potential detection line SH.
Concrete, low-voltage applies line FL ground connection, measures high potential and applies electric current I D, the voltage VG on the electronegative potential detection line SL, the voltage VS on the high potential detection line SH, then measured resistance R=(VS-VG)/ID on the line FH.
Utilize existing Kelvin four line structures; The resistance of testing certain a bit of circuit needs four ends to accomplish; Integrated chip for microminiaturization; Especially for the metal wire compact district of integrated chip, it is unpractical in very little zone, doing a lot of p-wires, and very the p-wire of many random rates also can bring very big inconvenience to the staff.
On the other hand, in the advanced process below 90nm, the circuit delay of back segment (RC delay) more and more has influence on the speed of integrated circuit, therefore, because the depression problem that Damascus different distributions density causes also more and more comes into one's own.Obtain the resistance of the circuit of different distributions density accurately, aspect circuit design (design) and emulation and modeling (spice model), very important meaning is arranged.
In view of this, be badly in need of proposing a kind of structure that can detect Damascus chemico-mechanical polishing degree, and the method that can test Damascus resistance.
Summary of the invention
The present invention provides a kind of mechanism for monitoring of CMP sinking degree of damascene; Solve the chemico-mechanical polishing sinking degree that conveniently to monitor damascene structure in the prior art, especially can't monitor the problem of chemico-mechanical polishing degree of the damascene structure of metal wire compact district.
The mechanism for monitoring of CMP sinking degree of damascene provided by the invention; Comprise: lead; The low-voltage that is positioned at said lead two ends applies end and high potential applies end; Apply end and said high potential applies and is provided with at least four current potential test sides between the end in said low-voltage, between every adjacent two current potential test sides a tested lead is set.
Optional, also being provided with blank lead in the both sides of said tested lead, said blank lead and said tested lead constitute the metal wire compact district.
Optional, said tested lead bending constitutes the metal wire compact district.
Further, the distribution density of said tested lead changes, and the distribution density of said tested lead is: the live width of tested lead/(live width of tested lead+tested separation).
Optional, the variable density of said tested lead is to realize through the live width that different tested leads are set.
Optional, the variable density of said tested lead realizes through different tested wire pitch are set.
Further, the density distribution of said tested lead becomes arithmetic progression.
Optional, the live width of said tested lead and tested separation are constant.
Further, the material of said tested lead is copper, tungsten or aluminium.
The present invention can well detect the chemico-mechanical polishing degree of damascene structure through detecting the resistance of damascene structure; Through blank lead being set in tested lead both sides or, can well monitoring the chemico-mechanical polishing degree of the damascene structure of metal wire compact district through tested lead bending; And because the mechanism for monitoring of CMP sinking degree of damascene of the present invention is equivalent to a plurality of Kelvin's four line structures are connected in series together, saved a lot of high potentials and applied the setting that end and electronegative potential apply end, effectively saved the space.
The present invention also provides a kind of method for testing resistance that utilizes the mechanism for monitoring of above-mentioned CMP sinking degree of damascene, comprising: at first, said low-voltage is applied end ground connection; Secondly, measure the electric current that said high potential applies end, the voltage of every adjacent two current potential test sides; At last, calculate the measured resistance between adjacent two current potential test sides, computing formula is: the voltage difference of measured resistance=adjacent two current potential test sides/said high potential applies the electric current of end.
Method for testing resistance of the present invention; Only need high potential of test to apply the electric current of end; Just can draw the measured resistance between adjacent two current potential test sides arbitrarily easily, the test structure with respect to a plurality of Kelvin's four line structures separate has reduced measurement number of times and test error.
Description of drawings
Fig. 1 is the profile of metal wire compact district after the existing chemico-mechanical polishing;
Fig. 2 is the sketch map of existing Kelvin's four line structure measuring resistances;
Fig. 3 is the mechanism of the monitoring damascene structure chemico-mechanical polishing of first embodiment of the invention;
The sectional view that is the metal wire compact district of first embodiment of the invention along the A-A direction shown in Figure 4;
Fig. 5 is the mechanism of the monitoring damascene structure chemico-mechanical polishing of second embodiment of the invention;
Fig. 6 is depression (erosion) degree of the detected damascene structure of online HRP of passing through or AFM.
Embodiment
In order to make content of the present invention clear more and understandable, content of the present invention is described in detail below in conjunction with specific embodiment and accompanying drawing.
The present invention has designed a kind of mechanism for monitoring of CMP sinking degree of damascene; Can utilize the mechanism for monitoring of said CMP sinking degree of damascene to record the resistance in Damascus; And through the resistance of damascene structure and the contact between the chemico-mechanical polishing degree; The thickness that is damascene structure is more little, and its chemico-mechanical polishing degree is big more, monitors damascene structure chemico-mechanical polishing degree.The mechanism for monitoring of said CMP sinking degree of damascene is connected in series to a plurality of Kelvin's four line structures together, can measure the resistance in a plurality of zones, and save many slotted lines, thereby effectively save the space.When the resistance of test damascene structure, only high potential of needs measurement applies the electric current of end, just can draw the resistance of different distributions density damascene structure easily.
Embodiment 1
Fig. 3 is the mechanism for monitoring and the method for testing resistance thereof of the CMP sinking degree of damascene of first embodiment of the invention.With reference to shown in Figure 3; The mechanism for monitoring and the method for testing resistance thereof of CMP sinking degree of damascene of the present invention comprise: lead 1; The low-voltage that is positioned at said lead 1 two ends applies holds FL10 and high potential to apply end FH10; Apply end FL10 and said high potential in said low-voltage and apply between the end FH10 and be provided with at least four current potential test sides, between every adjacent two current potential test sides a tested lead 208a is set.
Concrete; In the present embodiment; Applying end FL10 and said high potential in said low-voltage applies between the end FH10 and is provided with the first current potential test side SH11, the second current potential test side SH12, the 3rd current potential test side SH13, the 4th current potential test side SH14, the 5th current potential test side SH15, the 6th current potential test side SH16......; The quantity of current potential test side is set as required, and wherein every adjacent two current potential test sides and said low-voltage apply end FL10 and said high potential and apply end FH10 and be equivalent to Kelvin's four line structures.As: the first current potential test side SH11, the second current potential test side SH12 and low-voltage apply end FL10 and high potential and apply end FH10 and be equivalent to Kelvin's four line structures; The 3rd current potential test side SH13, the 4th current potential test side SH14 and low-voltage apply end FL10 and high potential and apply end FH10 and be equivalent to Kelvin's four line structures, and the 5th current potential test side SH15, the 6th current potential test side SH16 and low-voltage apply end FL10 and high potential and apply end FH10 and be equivalent to Kelvin's four line structures.
Said low-voltage is applied end FL ground connection, measure electric current I D, the voltage of every adjacent two current potential test sides, the then voltage difference/electric current I D of measured resistance=adjacent two current potential test sides that said high potential applies end FH.Like the voltage difference of the first current potential test side SH11 and the second current potential test side SH12, obtain the resistance between the first current potential test side SH11 and the second current potential test side SH12 divided by electric current I D again.
The first current potential test side SH11, the second current potential test side SH12 and low-voltage apply end FL10 and high potential and apply end FH10 and be equivalent to Kelvin's four line structures, and the resistance of measurement is the resistance of the tested lead 208a between the first current potential test side SH11 and the second current potential test side SH12.
Preferable, in order to guarantee the density of tested lead 208a, also being provided with blank lead 208b in the both sides of tested lead 208a, promptly blank lead 208b and tested lead 208a constitute the metal wire compact district.Through after the chemico-mechanical polishing, the metal wire compact district is shown in Figure 4 along the sectional view reference of A-A direction.
Preferable, in the mechanism for monitoring and method for testing resistance thereof of CMP sinking degree of damascene of the present invention, the distribution density of tested lead 208a changes.Please refer again to Fig. 3, the distribution density of tested lead 208a is an arithmetic progression in the present embodiment.Wherein, the distribution density of tested lead 208a is: the live width of tested lead/(live width of tested lead+tested separation), so can use live width and/or the tested separation of regulating tested lead, the distribution density of regulating tested lead.
If the distribution density of tested lead 208a changes, then the mechanism for monitoring of CMP sinking degree of damascene of the present invention and method for testing resistance thereof can be measured the resistance of the tested lead of different distributions density.And because among the present invention, all shared same low-voltage in all current potential test sides applies end and same high potential applies end, so the mechanism for monitoring of CMP sinking degree of damascene of the present invention and method for testing resistance thereof can be saved the space.
Embodiment 2
Fig. 5 is the mechanism for monitoring and the method for testing resistance thereof of the CMP sinking degree of damascene of second embodiment of the invention.Be that with the different of first embodiment tested lead 308 both sides of present embodiment are not provided with blank lead, but 308 bendings of tested lead constitute the metal wire compact district.With reference to shown in Figure 5; The mechanism for monitoring and the method for testing resistance thereof of the CMP sinking degree of damascene of present embodiment comprise: lead 2; The low-voltage that is positioned at said lead 2 two ends applies end FL20 and applies end FH20 with high potential, applies end FL20 and said high potential in said low-voltage and applies to hold between the FH20 and be provided with at least four current potential test sides.
In the mechanism for monitoring and method for testing resistance thereof of the CMP sinking degree of damascene of present embodiment, the resistance of measured resistance 308 is bigger, detects more easily, makes testing result more accurate.
The resistance formula of damascene structure is R=ρ l/s, and wherein, ρ is the resistivity of damascene structure, and l is the thickness of damascene structure, and s is the cross-sectional area of damascene structure.Because in the CMP process, the thickness that has only damascene structure according to the resistance formula of damascene structure can know then that changing the resistance and the thickness of damascene structure are proportional, its varied in thickness is identical with the trend of resistance variations.So, as long as know the resistance of damascene structure, just can monitor the chemico-mechanical polishing sinking degree of damascene structure.In addition, also can utilize high-res profile (HRP) or AFM (AFM), come the chemico-mechanical polishing sinking degree of on-line monitoring damascene structure.Depression (erosion) the degree sketch map of the damascene structure that Fig. 6 obtains for the online HRP of utilization or AFM.Wherein transverse axis x represents the width of damascene structure, and longitudinal axis y represents depression (erosion) degree of damascene structure.
More in depth; Tested lead to same distribution density (pattern density); While its depression of online detection (erosion) and resistance; Can obtain the relation (correlation) of distribution density and sinking degree, resistance, can calculate its resistance value accurately through distribution density for any one zone in the resistance test circuit like this.Therefore can infer the delay (RCdelay) of back-end process (BEOL) accurately.Aspect circuit design (design) and emulation and modeling (spice model), especially the advanced process below the 90nm has very important meaning.
Utilize Damascus method for testing resistance of aforementioned two embodiment, comprising: at first, said low-voltage is applied end FL ground connection; Secondly, measure said high potential and apply the electric current I D that holds FH, the voltage of every adjacent two current potential test sides; At last, calculate the measured resistance between adjacent two current potential test sides, computing formula is: the voltage difference/electric current I D of measured resistance=adjacent two current potential test sides.Only need high potential of measurement to apply the electric current of end, just can obtain the measured resistance of adjacent two current potential test sides arbitrarily easily, saved testing time and testing time.Embodiments of the invention do not limit protection scope of the present invention, and those skilled in the art can obtain general plotting of the present invention in fact, and the present invention is out of shape.
Claims (10)
1. the mechanism for monitoring of CMP sinking degree of damascene; Comprise: lead; The low-voltage that is positioned at said lead two ends applies end and applies end with high potential, applies end and said high potential in said low-voltage and applies and be provided with at least four current potential test sides between the end, whenever between adjacent two current potential test sides a tested lead is set; Wherein, tested lead is the part of lead.
2. the mechanism for monitoring of CMP sinking degree of damascene as claimed in claim 1 is characterized in that, also is provided with blank lead in the both sides of said tested lead, and said blank lead and said tested lead constitute the metal wire compact district.
3. the mechanism for monitoring of CMP sinking degree of damascene as claimed in claim 1 is characterized in that, said tested lead bending constitutes the metal wire compact district.
4. like the mechanism for monitoring of claim 1 or 2 or 3 described CMP sinking degree of damascene; It is characterized in that; The distribution density of said tested lead changes, and the distribution density of said tested lead is: the live width of tested lead/(live width of tested lead+tested separation).
5. the mechanism for monitoring of CMP sinking degree of damascene as claimed in claim 4 is characterized in that, the variable density of said tested lead is to realize through the live width that different tested leads are set.
6. the mechanism for monitoring of CMP sinking degree of damascene as claimed in claim 4 is characterized in that, the variable density of said tested lead realizes through different tested wire pitch are set.
7. the mechanism for monitoring of CMP sinking degree of damascene as claimed in claim 6 is characterized in that, the density distribution of said tested lead becomes arithmetic progression.
8. like the mechanism for monitoring of claim 1 or 2 or 3 described CMP sinking degree of damascene, it is characterized in that the live width of tested lead and tested separation are constant.
9. the mechanism for monitoring of CMP sinking degree of damascene as claimed in claim 8 is characterized in that, the material of said tested lead is tungsten or copper or aluminium.
10. utilize the method for testing resistance of the mechanism for monitoring of the described CMP sinking degree of damascene of claim 1, comprising: at first, said low-voltage is applied end ground connection; Secondly, measure the electric current that said high potential applies end, the voltage of every adjacent two current potential test sides; At last, calculate the measured resistance between adjacent two current potential test sides, computing formula is: the voltage difference of measured resistance=adjacent two current potential test sides/said high potential applies the electric current of end.
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| CN101697339B true CN101697339B (en) | 2012-10-31 |
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| CN103474370B (en) * | 2013-09-13 | 2018-04-06 | 上海集成电路研发中心有限公司 | The measuring unit and measuring method of copper cash array area domain surface of polished depression |
| CN109346420B (en) * | 2018-09-11 | 2021-04-06 | 武汉新芯集成电路制造有限公司 | Method for detecting conductivity of damascene structure |
| CN112230067B (en) * | 2020-10-21 | 2022-08-16 | 普迪飞半导体技术(上海)有限公司 | Resistance testing structure and method |
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| JP2002116238A (en) * | 2000-10-11 | 2002-04-19 | Matsushita Electric Ind Co Ltd | Ic socket and method for detecting contact failure in the same |
| CN1855420A (en) * | 2005-04-27 | 2006-11-01 | 上海华虹Nec电子有限公司 | Dimashg process with selective copper deposition |
| JP2007194644A (en) * | 1996-05-30 | 2007-08-02 | Toshiba Corp | Semiconductor integrated circuit |
| CN101393891A (en) * | 2008-10-10 | 2009-03-25 | 中国科学院微电子研究所 | Fabrication method for surface silver electrode of silicon based organic light emitting micro display device |
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- 2009-10-28 CN CN2009101978114A patent/CN101697339B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007194644A (en) * | 1996-05-30 | 2007-08-02 | Toshiba Corp | Semiconductor integrated circuit |
| JP2002116238A (en) * | 2000-10-11 | 2002-04-19 | Matsushita Electric Ind Co Ltd | Ic socket and method for detecting contact failure in the same |
| CN1855420A (en) * | 2005-04-27 | 2006-11-01 | 上海华虹Nec电子有限公司 | Dimashg process with selective copper deposition |
| CN101393891A (en) * | 2008-10-10 | 2009-03-25 | 中国科学院微电子研究所 | Fabrication method for surface silver electrode of silicon based organic light emitting micro display device |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140514 |
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