CN101670487A - Method and device for forming line used for cutting - Google Patents
Method and device for forming line used for cutting Download PDFInfo
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- CN101670487A CN101670487A CN200910173186A CN200910173186A CN101670487A CN 101670487 A CN101670487 A CN 101670487A CN 200910173186 A CN200910173186 A CN 200910173186A CN 200910173186 A CN200910173186 A CN 200910173186A CN 101670487 A CN101670487 A CN 101670487A
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- substrate
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- optical axis
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- preset lines
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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Abstract
The present invention provides a method and a device for forming a line used for cutting. The line with enough depth for cutting off the substrate can be formed on a more transparent substrate with low energy absorbing efficiency without thermal damage to a device substrate inlayed wherein. The method of the invention comprises the following steps: a first step, through relatively moving a pulse-shaped laser beam through performing Q switch driving to the substrate and a laser oscillator, only irradiating the pulse-shaped laser beam to a preset fine interval which sets the substrate edge on apreset cutting-off line on the substrate to one end; and a second step, through relatively moving the CW laser beam obtained by continuously driving the substrate and the laser oscillator, irradiatingthe CW laser beam to all intervals from one substrate edge to the other substrate edge on the preset cutting-off line that is set on the substrate.
Description
Technical field
The present invention relates to the transparent substrates (substrate) that has embedded device (device) circuit is shone from the laser beam of the provision wavelengths of laser oscillator generation, simultaneously substrate and bundle are relatively moved, thereby on substrate, form the method and apparatus that substrate cuts off the line (scribe) of usefulness.
Background technology
In the past, for the substrate (wafer: wafer) be divided into each circuit wafer (chip) that will embed a plurality of device circuitry in length and breadth, adopted following method: on substrate cut apart preset lines and be pre-formed the line after, the chopping up apparatus of use expander (expander) etc. is cut off substrate along line.
At this moment, if in the formation of line, adopt the machining process used cutter etc., then because produce particle (particle) thus subsequent step is brought obstacle, so adopted following method in the past: irradiation is from the CW laser beam of the provision wavelengths of laser oscillator generation, simultaneously substrate and bundle are relatively moved, cut off the line of usefulness thereby on substrate, form substrate.
In the formation method of the line used for cutting that has used such CW laser beam, form the line of cutting off required prescribed depth when failing to suppress the hot influence for the device circuitry that embeds substrate interior reliably as far as possible.
Be under the situation of opaque substrate of silicon chip etc. at the substrate that becomes object since for the energy absorption efficiency of CW laser beam than higher, so, also can form the line of cutting off required prescribed depth easily even without the power that improves laser beam so.
But, under the situation of the substrate that becomes object for high substrate such as the transparency of Sapphire Substrate for example etc., because low, so, then can not form the line of cutting off required prescribed depth if significantly do not improve the power of laser beam for the energy absorption efficiency of CW laser beam.But,, then exist the device circuitry that embeds substrate interior to be subjected to hot influence and impaired misgivings if improve the power of laser beam like this.
On the other hand, known following technology: even transparency is than higher substrate, if use and laser oscillator to be carried out Q-switch drive resulting pulse type laser beam, form line (with reference to patent documentation 1) when also can do one's utmost to suppress to the hot influence that produces around the laser beam point of irradiation.
The prior art document
[patent documentation 1] (Japan) spy opens the 2004-114075 communique
But, in the formation method of the line used for cutting of the pulse type laser beam of stating in the use, though can be with the hot minimization that influences, but conversely, in order to form fully dark line, still need the power of laser beam is significantly improved, if for the hot influence of device circuitry, still there is the problem points that is difficult to guarantee the sufficient degree of depth in consideration eventually.
Summary of the invention
The problem that invention will solve
The present invention finishes in view of such problem points in the past, its purpose is, even provide a kind of transparency than higher substrate, also can will be suppressed to minimum, form the formation method and apparatus of the line used for cutting of the line of cutting off the required abundant degree of depth simultaneously reliably for the hot influence that embeds device circuitry wherein.
In addition, other purposes of the present invention are, provide a kind of and can not bring bigger change the line formation system in the past that has used laser beam, and the formation method and apparatus of the line used for cutting that can realize with low cost.
By the following record of reference specification, those skilled in the art should understand other purposes of the present invention and action effect easily.
Be used to solve the means of problem
Can think that the formation method of the line used for cutting that above-mentioned " problem that invention will solve " can be by having following structure solves.
Promptly, the formation method of this line used for cutting is that the transparent substrates that has embedded device circuitry is shone from the laser beam of the provision wavelengths of laser oscillator generation, simultaneously substrate and bundle are relatively moved, thereby on substrate, form substrate and cut off the method for the line of usefulness, and comprise the 1st step and the 2nd step.
The 1st step is, by substrate is driven the pulse type laser beam obtain and relatively moves with laser oscillator being carried out Q-switch, thereby only to the described pulse type laser beam of internal radiation between the regulation Microcell that the edges of substrate on the preset lines begins that cuts off from setting at described substrate.
The 2nd step is, by substrate is relatively moved with laser oscillator being driven continuously the CW laser beam that obtains, thereby to cutting off a end that is equivalent to edges of substrate on the preset lines to the described CW laser beam of whole interval irradiation of the other end that is equivalent to edges of substrate from what set at described substrate.
Wherein, " device circuitry " is meant the circuit that constitutes the device that embeds this substrate, generally is made of integrated circuit.In addition, under the situation of glass substrate on the LCD etc., comprise that each circuit pattern (pattern) of the electrode of liquid crystal device circuit is equivalent to this.Promptly, the transparency that the present invention is not limited to embed Sapphire Substrate etc. is divided into the purposes of each sheet than a plurality of device circuitry on the higher substrate, can also be applied on glass substrate, embed a plurality of LCD patterns (pattern) that portable phone uses afterwards, they have been divided into the purposes of each display pattern (pattern).
In addition, " substrate and bundle are relatively moved " be meant, comprises that halved tie itself puts the situation of scanning probe and make the both sides of the situation that substrate side moves and their combination by XY table top (stage).
Formation method according to such line used for cutting, by carrying out the 1st step, cutting off between the regulation Microcell that the edges of substrate on the preset lines begins of setting from substrate, be subjected to having the pulse type laser beam of the high peak energies of moment property, become asperities thereby its surface was destroyed by moment, superficial certain zone becomes the denatured areas of the energy absorption that is easy to generate multipath reflection.Then, carry out the 2nd step, then on above-mentioned denatured areas, shine the CW laser beam, thereby substrate absorbs the energy of this CW laser beam expeditiously and becomes high temperatureization, therefore,, carry out the fusing of backing material between above-mentioned Microcell along with moving of laser beam.Then, from the close substrate zone that does not have sex change between above-mentioned Microcell, then owing to the heat that transmits from adjacent area, and the backing material part that does not have sex change adjacent between Microcell also can cause high temperatureization and fusing, adjacent areas is melted as getting snowslide successively afterwards, even thereby more lower powered CW laser beam also can cut off the whole interval melted substrate of preset lines, is formed for constituting the abundant dark groove of line.
Therefore, because except the pulse type laser beam itself is difficult to produce the hot influence to the device circuitry that embeds substrate interior, can also use more low-energy CW laser beam, therefore, even become the substrate of object is that transparency is than higher substrate, also can will be suppressed to minimum, form reliably simultaneously and cut off the line of required prescribed depth for the hot influence that embeds inner device circuitry.
In addition, formation method according to this line used for cutting, though use laser beam with two kinds of radiation modalities, but the laser beam of each mode only is the driving method difference, itself basic structure of oscillator is identical, therefore, need not significantly to change system architecture in the past, can realize this method with low cost.
In the formation method of above-mentioned line used for cutting, if the processing of the 1st step comprises: along on substrate, set in length and breadth cut off preset lines, the optical axis of laser beam is indulged worn scanning or cross scanning, simultaneously only to interior processing between the regulation Microcell after the substrate exterior domain enters the substrate inner region to the substrate illumination laser beam, and, the processing of the 2nd step comprises: along on substrate, set in length and breadth cut off preset lines, the optical axis of laser beam is indulged worn scanning or cross scanning, simultaneously to after the substrate exterior domain enters the substrate inner region, withdrawing from whole intervals of substrate exterior domain processing to substrate illumination CW laser beam from the substrate inner region, then a plurality of device circuitry that embed in length and breadth on than higher wafer in transparency can be divided in the purposes of each circuit wafer, the bundle and the scanning of XY table top are made up, thereby can form line expeditiously.
In addition, when above-mentioned circuit wafer is cut apart, experiment according to inventor etc., confirmed the following fact: if transparent substrates is when being embedded in the Sapphire Substrate of device circuitry in each rectangular area of dividing in length and breadth, laser oscillator is the YVO laser oscillator, then can not bring hot influence fully, can form the line of cutting off desired depth reliably embedding inner device circuitry.
Can think that the formation device of the line used for cutting that above-mentioned " problem that invention will solve " can be by having following structure solves.
That is, the formation device of this line used for cutting comprises: the XY table top has been used to put and the fixedly embedded transparent substrates of device circuitry; The laser beam production part by laser oscillator is carried out pulsed drive or Continuous Drive, penetrates in pulse type laser beam and the CW laser beam any thereby can select a ground; The bundle import optical system is used for and will with the optical axis of stipulating the substrate that puts and be fixed on the described XY table top be shone from the laser beam that described laser beam production part produces; The path setting parts by described XY table top and described optical axis are relatively moved, make the mobile route that cut off preset lines optical axis when moving of optical axis on described substrate thereby be set on the described XY table top; The slight distance set parts along the preset lines of setting of cutting off, is set the slight distance of the regulation that should measure to the other end that is equivalent to edges of substrate from an end that is equivalent to edges of substrate on described substrate; The bundle mobile control unit is controlled moving of described XY table top, makes described optical axis move along the mobile route of the optical axis of setting in described path setting parts; The 1st bundle irradiation control assembly, in the 1st scanning that described optical axis is moved along described set path, by penetrating the pulse type laser beam from described laser beam production part in suitable timing, thereby only in the slight distance interval that a end that is equivalent to edges of substrate on the preset lines begins from cutting off of setting at described substrate is set by described slight distance set parts, to described substrate illumination pulse type laser beam; And the 2nd bundle irradiation control assembly, in the 2nd scanning that described optical axis is moved along described set path, by penetrating the CW laser beam from described laser beam production part in suitable timing, thereby only to cutting off a end that is equivalent to edges of substrate on the preset lines in whole intervals of the other end that is equivalent to edges of substrate, to described substrate illumination CW laser beam from what set at described substrate.
According to such structure, as long as preestablish the mobile route of optical axis and from the slight distance of edges of substrate, just can restraint irradiation control assembly and the 2nd effect of restrainting the irradiation control assembly by transmitted beam mobile control unit, the 1st, on substrate, automatically form and cut off the line of required prescribed depth.
In the formation device of above-mentioned line used for cutting, described the 1st bundle irradiation control assembly, also can be before described optical axis moves to the substrate inner region from the substrate exterior domain, begin to shine described pulse type laser beam, and wait for that described optical axis is by between described Microcell, stop to shine described pulse type laser beam, described the 2nd bundle irradiation control assembly, also can be before described optical axis moves to the substrate inner region from the substrate exterior domain, begin to shine described CW laser beam, and at described optical axis after the substrate inner region moves to the substrate exterior domain, stop to shine described CW laser beam.
According to such structure and since except the formation of line used for cutting required during, pulse type laser beam and CW laser beam are kept and are stopped irradiation, therefore, can generate necessary line used for cutting with the power consumption of minimum.
In addition, when above-mentioned circuit wafer is cut apart, experiment according to inventor etc., confirmed the following fact: if transparent substrates is when being embedded in the Sapphire Substrate of device circuitry in each rectangular area of dividing in length and breadth, laser oscillator is the YVO laser oscillator, then can not bring hot influence fully, can form the line of cutting off desired depth reliably embedding inner device circuitry.
The invention effect
Formation method and apparatus according to line used for cutting of the present invention, even at the substrate that becomes object is that transparency is than higher substrate, also can will be suppressed to minimum for the hot influence that embeds device circuitry wherein, form reliably simultaneously and have the line of cutting off the required degree of depth, and, just, can realize with low cost in addition a little variation of system in the past.
Description of drawings
Fig. 1 is to be the structure chart that the entire system of the inventive method is represented to be used to implement in the center with the optical system.
Fig. 2 is the key diagram of the track while scan of Q-switch oscillating impulse laser.
Fig. 3 is the key diagram of the track while scan of CW laser.
Fig. 4 (a)～(b) is the block diagram that is used to illustrate the inventive method.
Fig. 5 is to be the structure chart that the entire system of the inventive method is represented to be used to implement in the center with the electrical system.
Fig. 6 is a key diagram of using picture in control with the setting among the PC.
Fig. 7 is the flow chart of a series of action of each substrate of expression device of the present invention.
Fig. 8 is illustrated in the flow chart that the contents processing of PC is used in the control of processing in handling.
Label declaration
1XY table top mechanism
2 articles holding tables
3 import optical systems
4 attenuators (attenuator)
5 laser oscillators
6 pulse generators
7 oscillator control modules
8 Sapphire Substrate
8a substrate inner region
8b substrate exterior domain
The 8c rectangular area
The 8d edges of substrate
9 optical axis mobile routes
9a cuts off preset lines longitudinally
9b is horizontal cuts off preset lines
10 pulsed laser irradiation lines
11 CW laser illuminated line
12 directional planes (orientation plane) part
31 pulse type laser beams
32 CW laser beams
81 denatured areas
82 groove zones
101 XY table top mechanisms
101a X-axis actuator (actuator)
101b Y-axis actuator
101c θ shaft actuator
103 import optical systems
104 attenuators (attenuator)
105 laser oscillators
106 pulse oscillators
107 control modules
108 substrates
109 Laser Power Devices
110 control PC slave parts (support)
111 control PC
112 servo drive units
113 cover driving mechanism for switches
Between the L Microcell
The specific embodiment
Below, the formation method of the line used for cutting that present invention will be described in detail with reference to the accompanying one preferred embodiment.In addition, below Shuo Ming a embodiment only is included in an example of embodiments of the present invention, and scope involved in the present invention is determined it is natural by the structure of claim scope.
Fig. 1 is to be the structure chart that the entire system of the inventive method is represented to be used to implement in the center with the optical system.As shown in Figure 1, this system comprises following and constitutes: XY table top mechanism 1, articles holding table 2, import optical system 3, attenuator (attenuator) 4, laser oscillator 5, pulse generator 6 and oscillator control module 7.
Schematically shown XY table top 1 in the drawings, but such as well known to the skilled person, XY table top 1 has directions X driving mechanism 1a and Y direction driving mechanism 1b, can pass through these driving mechanisms, articles holding table 2 is moved to the optional position of XY direction.In addition, in this example, the assigned position on articles holding table 2, the Sapphire Substrate 8 that has put and fixed the object that becomes line formation.Such as well known to the skilled person, can utilize vacuum absorption device etc. fixing of substrate.In this example, laser oscillator 5 adopts the YVO laser that sends non-visible infrared light (wavelength 1.064 μ m).This laser oscillator 5 carries out laser generation according to the mode of the train of pulse that provides from pulse generator 6 with two drive patterns that are made of the 1st pattern and the 2nd pattern.From the switching of the pulse producing method of pulse generator 6 is that the control of origin self-oscillation device control module 7 is carried out.
That is,,, then carry out Q-switch and drive resulting pulse type laser beam from laser oscillator 5 ejaculations from the burst signal of 6 pairs of laser oscillators of pulse generator, 5 transmissions the 1st mode if by control from oscillator control module 7.The pulse spacing of this pulse type laser beam is controlled by the train of pulse that provides from pulse generator 6.On the other hand,, provide the train of pulse of the 2nd mode, then penetrate by the resulting CW laser beam of Continuous Drive from laser oscillator 5 from 6 pairs of laser oscillators 5 of pulse generator if by from the control of oscillator control module 7.
In addition, drive pulse type laser beam that obtains and the CW laser beam that obtains by Continuous Drive by Q-switch, therefore give various known references for its details because those skilled in the art is known.
Pulse type laser beam that penetrates from laser oscillator 5 or CW laser beam are after carrying out the intensity adjustment by attenuator (attenuator) 4, import optical system 3 through the various optical elements by speculum or lens etc. constitute shines on the Sapphire Substrate 8 as pulse type laser beam 31 or CW laser beam 32.
Fig. 2 represents the key diagram of the track while scan of Q-switch oscillating impulse laser, and Fig. 3 represents the key diagram of the track while scan of CW laser.
As shown in Figure 2, the pulse type laser beam 31 that penetrates from import optical system 3 scans along the optical axis mobile route track 9 of the vertical and horizontal that dot in the drawings.In addition, the optical axis mobile route 9 that dots is in the drawings just represented the mobile route of optical axis, whether do not represent outgoing laser beam itself.Such as described later, the zone of outgoing laser beam is by illustrating with heavy line or fine line on the dotted line of expression optical axis mobile route 9.
Then, in the 1st step of the present invention, along the optical axis mobile route 9 that dots in the drawings, cutting off with preset lines 9b and move optical axis transversely in the left and right end portions direction of rotation, and, carry out the irradiation of representing with solid line as in the drawings pulsed laser irradiation line 10, pulse type laser 31b only to L between the regulation Microcell after substrate exterior domain 8b enters substrate inner region 8a.
If to horizontal whole limited irradiations of finishing pulse type laser beam 31 of cutting off preset lines 9b, then that direction is vertical from laterally rotating to be, and cutting off preset lines 9a and move optical axis along the longitudinal the time only to L between the regulation Microcell after substrate exterior domain 8b enters substrate inner region 8a, radiation pulses shape laser beam 31 is used the pulsed laser irradiation line 10 shown in the heavy line in the drawings thereby form.
So, such shown in Fig. 4 (a), on Sapphire Substrate 8, by the caused fusing of heating rapidly when importing pulse (pulse-on) with by the caused curing of cooling rapidly when break impulse (pulse-off), shone the surperficial destroyed of L between the Microcell of pulse type laser beam 31 and become asperities, and its superficial top layer also becomes the denatured areas 81 of the multipath reflection that is easy to generate laser beam.In addition, in the drawings, P1 is the optical axis position at substrate exterior domain 8b, and P2 is the optical axis position at substrate inner region 8a.
Return Fig. 3, in the 2nd step, along the predetermined optical axis mobile route 9 that dots in the drawings, with the 1st step in the same manner transversely and vertically move optical axis, simultaneously horizontal in the scope that breaks away from substrate exterior domain 8b after substrate exterior domain 8b enters substrate inner region 8a once more cut off preset lines 9b and cut off longitudinally in whole intervals of preset lines 9a, carries out the irradiation of CW laser beam 32 as representing with fine line among the figure.
At this moment, suppose under pulsed laser irradiation line 10 non-existent situations, because the transparency height of Sapphire Substrate 8, so can not absorb energy fully by independent irradiation, therefore, the intensity of CW laser beam 32 becomes the lower intensity that can not form the line degree of cutting off the required sufficient degree of depth.
Promptly, former, by the CW laser beam of so low intensive power, can avoid influence, but can not obtain cutting off the line of the required sufficient degree of depth the device circuitry that is embedded into inside, but in the 2nd step, because after substrate exterior domain 8b enters substrate inner region 8a, so more low intensive CW laser beam is irradiated on the pulsed laser irradiation line 10, therefore, the energy of laser beam is absorbed expeditiously by substrate, thereby its part is warmed up to the required high temperature of fusing.
So like that, the denatured areas 81 that exists among the L between Microcell is raised to sufficient high temperature, and together melts and shrink with the zone that does not have sex change that is positioned at its lower floor, thereby becomes the groove zone 82 of the line of cutting off usefulness shown in Fig. 4 (b).
And then, except this denatured areas 81, the Sapphire Substrate 8 that is adjacent, thereby according to denatured areas 81 become high temperature transmit its heat as getting snowslide, melt, its result, even there is not the surface of the Sapphire Substrate 8 of denatured areas 81, also advance groove zone 82 along cutting off preset lines.
And, at optical axis at every turn when substrate exterior domain 8b enters substrate inner region 8a, denatured areas 81 is formed groove zone 82 continuously as basic point, thereby what can be provided with on substrate cuts off in preset lines 9a and the horizontal universe scope of cutting off preset lines 9b longitudinally, formation has the line of cutting off the required sufficient degree of depth reliably, and can not bring hot damage to the device circuitry that embeds substrate 8.
Like this, according to this embodiment, since along on substrate 8, set in length and breadth cut off preset lines 9a, 9b, the optical axis of laser beam is indulged to be worn or crosses, simultaneously only in the L between the regulation Microcell after substrate exterior domain 8b enters substrate inner region 8a, to substrate 8 radiation pulses shape laser beams 31, and, along the same preset lines of cutting off, the optical axis of laser beam is indulged to be worn or crosses, simultaneously to after substrate exterior domain 8b enters substrate inner region 8a, being withdrawn into the cutting off longitudinally in preset lines 9a or the horizontal whole intervals of cutting off preset lines 9b of substrate exterior domain 8b, to substrate 8 irradiation CW laser beams, therefore, form under the situation of the line of cutting off usefulness in the Sapphire Substrate 8 of using the YVO laser oscillator each rectangular area 8c that is divided in length and breadth to be embedded in device circuitry, can be in relatively shorter time and the low-cost formation that realizes this line.
Then, explanation is used to implement an example of the device of the inventive method with reference to Fig. 5～Fig. 8.
Fig. 5 is to be the structure chart that the entire system of the inventive method is represented to be used to implement in the center with the electrical system.As shown in Figure 5, this system comprises following and constitutes: XY table top mechanism (the XY table top mechanism 1 that is equivalent to Fig. 1) 101, import optical system (import optical system 3 that is equivalent to Fig. 1) 103, attenuator (attenuator) (attenuator 4 that is equivalent to Fig. 1) 104, laser oscillator (laser oscillator 5 that is equivalent to Fig. 1) 105, pulse oscillator (pulse oscillator 6 that is equivalent to Fig. 1) 106, control module 107, servo drive unit 112 and control PC111.
Though it is not shown, but with the XY table top mechanism 1 of Fig. 1 in the same manner, XY table top mechanism 101 comprises directions X driving mechanism, Y direction driving mechanism and articles holding table (comprising the θ driving mechanism), and each mechanism drives by X-axis actuator (actuator) 101a, Y-axis actuator 101b and the θ shaft actuator 101c by motor, cylinder formations such as (cylinder).
Whole system is controlled with personal computer (PC) 111 unifications by control.That is, the action that can carry out the X-axis actuator 101a that directions X moves, the Y direction moves, the Y-axis actuator 101b of XY table top respectively is to be controlled with PC111 by control by servo drive unit 112.
The action of pulse oscillator 106 that is used to determine the drive pattern (pulsed drive or Continuous Drive) of laser oscillator 105 is to control with PC111 by controlling with PC slave part 110 by control module 107 and control.Similarly, the Laser Power Devices 109 that become the power supply of pulse oscillator 106 are to control with PC111 by controlling with PC slave part 110 by control module 107 and control.
Can be by the operation of the action button (" CENTER ", " ALIGN " etc.) that on the 1st operating desk 107a, is provided with, also can manually control the moving of directions X, Y direction and θ direction of XY table top.In addition; such as described later; can be by the operation of the action button (" CLOSE ") that on the 2nd operating desk 107b, is provided with, also can manually come switch control to be used to manage the cover driving mechanism for switches 113 of the switch motion of the protective cover (not shown) that covers articles holding table.In addition, such as described later, on the 1st operating desk 107a, be provided with the action button (" START ") that is used to indicate the startup of processing processing.
The operation that Fig. 6 is illustrated in system began in the preparatory stage before, the setting that shows in controlling with the PC111 key diagram of picture.As shown in Figure 6, as moving the information that preparation is set, comprise following information in this example: with the shape or the relevant information (" the diameter X-axis of wafer " of size of the substrate that becomes processing object, " the diameter Y-axis of wafer ", " directional plane length "), mobile route or the relevant information (" chip size (processing spacing) X-axis " of speed with optical axis, " chip size (processing spacing) Y-axis ", " process velocity (Q-SW pulse) ", " process velocity (CW pulse) ", " wafer process initial point X-axis ", " wafer process initial point Y-axis ", " processing surpasses (overrun) amount X-axis ", " processing surpasses the amount Y-axis "), and with along the preset lines of on substrate, setting of cutting off, the relevant information (" otch amount ") of slight distance of the regulation that should measure from the end that is equivalent to edges of substrate to the other end that is equivalent to edges of substrate.
Then, the flow chart of a series of action of representing each substrate of device of the present invention at Fig. 7.
As shown in Figure 7; under the situation of the line processing of cutting off usefulness that a substrate is stipulated; at first; workpiece (work) (substrate) 108 is arranged on (step 201) after the articles holding table; press " CLOSE " button of the 2nd operating desk 107b; thereby, shut the protective cover (step 202) that covers articles holding table by the effect of cover driving mechanism for switches 113.
Then, press " CENTER " button of the 1st operating desk 107a, thereby pass through the effect of X-axis actuator 101a, Y-axis actuator 101b and servo drive unit 112, the workpiece centre of will moving playing surface (step 203).When workpiece centre moves table top, with reference to predefined information (" wafer process initial point X-axis ", " wafer process initial point Y-axis ").
Then, press " ALIGN " button of the 1st operating desk 107a, thereby effect by X-axis actuator 101a, come and go table top (step 204) for several times to directions X, pass through the switching manipulation of the 1st operating desk 107a simultaneously, by θ shaft actuator 101c be used for adjust θ shaft angle degree, thereby aim at (alignment) operation, make line can not move up and down (step 205).
Like this, finish, then press button, thereby (step 206) handled in the processing of transferring to line used for cutting at the 1st operating desk 107a " START " if aim at (adjustment) operation.It is major part of the present invention that this processing is handled, and such as described later, comprise the otch processing of carrying out as the 1st processing of passing through Q-SW laser (in the slight distance processing of edges of substrate) and the line processing of carrying out as the 2nd processing of passing through CW laser (total length processing) from an edges of substrate to another edges of substrate.
Here, detailed description is handled as the processing of major part of the present invention.Be illustrated in the flow chart that the contents processing of PC111 is used in the control of processing in handling at Fig. 8.
As shown in Figure 8, if be judged to be connection and (ON) processing sign on (step 301 by pressing " START " button, 302 "Yes"), then carry out the optical axis spotting scaming of set path is handled, promptly by X-axis actuator 101a, Y-axis actuator 101b and servo drive unit 112 are controlled the processing that is equivalent to restraint mobile control unit (step S303) of moving of XY table top, make optical axis along by before control with PC111 in the information (" the diameter X-axis of wafer " relevant that set with the shape substrate that becomes processing object or size, " the diameter Y-axis of wafer ", " directional plane length ") and with the mobile route or the relevant information (" chip size (processing spacing) X-axis " of speed of optical axis, " chip size (processing spacing) Y-axis ", " process velocity (Q-SW pulse) ", " process velocity (CW pulse) ", " wafer process initial point X-axis ", " wafer process initial point Y-axis ", " processing surpasses the amount X-axis ", " processing surpass amount Y-axis ") mobile route (for example, the optical axis mobile route 9 shown in the with dashed lines in Fig. 2) of determined optical axis moves.
Simultaneously, carry out above-mentioned optical axis spotting scaming circularly and handle (step 303) set path, and judge during this period whether optical axis position has reached from substrate exterior domain 8b before the moving of substrate inner region 8a (step 304), whether optical axis position has passed through by between the determined Microcell of the information of previous setting (" otch amount ") (step 308), whether optical axis position has reached from substrate inner region 8a after the moving of substrate exterior domain 8b (step 311), and whether optical axis position has passed through whole (steps 314) in path 9.
In addition, above determination processing is, based on the following information of before in controlling, having set with PC111, more current optical axis position and substrate location are carried out, described information is shape or the relevant information (" the diameter X-axis of wafer " of size with the substrate that becomes processing object, " the diameter Y-axis of wafer ", " directional plane length "), mobile route or the relevant information (" chip size (processing spacing) X-axis " of speed with optical axis, " chip size (processing spacing) Y-axis ", " process velocity (Q-SW pulse) ", " process velocity (CW pulse) ", " wafer process initial point X-axis ", " wafer process initial point Y-axis ", " processing surpasses the amount X-axis ", " processing surpasses the amount Y-axis "), and with along the preset lines of on substrate, setting of cutting off, the relevant information (" otch amount ") of slight distance of the regulation that should measure from the end that is equivalent to edges of substrate to the other end that is equivalent to edges of substrate
Under this state, if being judged to be optical axis position has reached from substrate exterior domain 8b before the moving of substrate inner region 8a (step 304 "Yes"), then will this moment the path scanning times be the 1st time as condition (step 305, the 1st time), the beginning pulse laser irradiation (step 306).As narrating, it is to use under the control of PC111 in control that the irradiation of this pulse laser begins, and by control module 107 Laser Power Devices 109 and pulse generator 106 is moved with the pattern of regulation and carries out.
Then, passed through by between the determined Microcell of information (" otch amount ") of previous setting (step 308 "Yes") if be judged to be optical axis position, then will this moment the path scanning times be the 1st time as condition (step 309, the 1st time), the irradiation (step 310) of stop pulse laser.Like this, as previous with reference to Fig. 2 explanatorily, set on the substrate 8 cut off edges of substrate 8d on the preset lines 9 near, form and have the pulse type laser illuminated line (cut line) 10 of slight distance L.
After, reached when substrate exterior domain 8b is before the moving of substrate inner region 8a (step 304 "Yes") being judged to be optical axis position at every turn, with this moment the path scanning times be the 1st time as condition (step 305, the 1st time), the irradiation (step 306) of beginning pulse laser, and, be judged to be at every turn optical axis position passed through by the determined Microcell of information (" otch amount ") of previous setting between the time (step 308 "Yes"), the irradiation (step 310) of stop pulse laser.Its result as representing with heavy line among Fig. 2, on the substrate 8 that becomes processing object, is adjacent to form the pulse type laser illuminated line (incision line) 10 with slight distance L with edges of substrate 8d.
If during more than repeating, be judged to be and passed through predetermined whole mobile routes 9 (step 314 "Yes"), the scanning times of mobile route that then will this moment be the 1st time as condition (step 315, the 1st time), scanning times is switched to after the 2nd time from the 1st time, turn back to (step 303), begin the 2nd time optical axis spotting scaming.
In the 2nd time optical axis spotting scaming, also whether reached from substrate exterior domain 8b before the moving of substrate inner region 8a (step 304) with judging optical axis position for the 1st time in the same manner, whether optical axis position has passed through by between the determined Microcell of setting before of information (" otch amount ") (step 308), whether optical axis position has reached from substrate inner region 8a after the moving of substrate exterior domain 8b (step 311), and whether optical axis position has passed through whole (steps 314) in path 9.
If under this state, being judged to be optical axis position has reached from substrate exterior domain 8b before the moving of substrate inner region 8a (step 304 "Yes"), with the path scanning times of this moment be the 2nd time as condition (step 305, the 2nd time), the irradiation (step 307) of beginning CW laser.As narrating, it is to use under the control of PC111 in control that the irradiation of this CW laser begins, and by control module 107 Laser Power Devices 109 and pulse generator 106 is moved with the pattern of regulation and carries out.
In the 2nd time optical axis spotting scaming, also continue irradiation CW laser (step 309 even passed through between Microcell (step 308 "Yes") with respect to optical axis, the 2nd time), if be judged to be optical axis position from substrate inner region 8a after the moving of substrate exterior domain 8b (step 311 "Yes"), then will this moment the path scanning times be the 2nd time as condition (step 305, the 2nd time), stop the irradiation (step 313) of CW laser.
After, reached when substrate exterior domain 8b is before the moving of substrate inner region 8a (step 304 "Yes") being judged to be optical axis position at every turn, with this moment the path scanning times be the 2nd time as condition (step 305, the 2nd time), the irradiation (step 307) of beginning CW laser, and, reached from substrate inner region 8a after the moving of substrate exterior domain 8b (step 311 "Yes") being judged to be optical axis position, with this moment the path scanning times be the 2nd time as condition (step 312, the 2nd time), stop the irradiation (step 313) of CW laser, its result, as representing with fine line among Fig. 2, on the substrate 8 that becomes processing object, between an edges of substrate 8d and another edges of substrate 8d, form CW laser illuminated line 11 endlong.
If during more than repeating, be judged to be and passed through predetermined whole mobile routes 9 (step 314 "Yes"), the scanning times of mobile route that then will this moment be the 2nd time as condition (step 315, the 2nd time), scanning times is switched to after the 1st time end process from the 2nd time.
Such as mentioned above, the device that is used to implement the inventive method comprises: XY table top (being made of XY table top mechanism 101, X-axis actuator 101a, Y-axis actuator 101b etc.) has been used to put and the fixedly embedded transparent substrates of device circuitry; Laser beam production part (constituting) by attenuator 104, laser oscillator 105, pulse oscillator 106, control module 107, Laser Power Devices 109 etc., by laser oscillator is carried out pulsed drive or Continuous Drive, penetrate in pulse type laser beam and the CW laser beam any thereby can select a ground; Bundle import optical system (being made of import optical system 103 grades) is used for and will with the optical axis of stipulating the substrate that puts and be fixed on the described XY table top be shone from the laser beam that described laser beam production part produces; Path setting parts (being made of with PC111 etc. control) by described XY table top and described optical axis is relatively mobile, thereby are set in the mobile route of the optical axis when making optical axis cutting off static line and move on described substrate on the described XY table top; Slight distance set parts (being made of with PC111 etc. control) along the preset lines of setting of cutting off, is set the slight distance of the regulation that should measure to the other end that is equivalent to edges of substrate from an end that is equivalent to edges of substrate on described substrate; Bundle mobile control unit (being made of step 303, X-axis actuator 101a, Y-axis actuator 101b etc.) is controlled moving of described XY table top, makes described optical axis move along the mobile route of the optical axis of setting in described path setting parts; The 1st bundle irradiation control assembly (constituting) by step 304～306, step 308～310 etc., in the 1st scanning that described optical axis is moved along described set path, by penetrating the pulse type laser beam from described laser beam production part in suitable timing, thereby only in the slight distance interval that a end that is equivalent to edges of substrate on the preset lines begins from cutting off of setting at described substrate is set by described slight distance set parts, to described substrate illumination pulse type laser beam; And the 2nd bundle irradiation control assembly (constituting) by step 304,305,307, step 311～313 etc., in the 2nd scanning that described optical axis is moved along described set path, by penetrating the CW laser beam from described laser beam production part in suitable timing, thereby only to cutting off a end that is equivalent to edges of substrate on the preset lines in whole intervals of the other end that is equivalent to edges of substrate, to described substrate illumination CW laser beam from what set at described substrate.
And, according to such structure, as long as preestablish the mobile route of optical axis and from the slight distance of edges of substrate, just can restraint irradiation control assembly and the 2nd effect of restrainting the irradiation control assembly by transmitted beam mobile control unit, the 1st, on substrate, automatically form and cut off the line of required prescribed depth.
And, because in the formation device of above-mentioned line used for cutting, described the 1st bundle irradiation control assembly is, before described optical axis moves to the substrate inner region from the substrate exterior domain, begin to shine described pulse type laser beam, and wait for that described optical axis is by between described Microcell, stop to shine described pulse type laser beam, described the 2nd bundle irradiation control assembly is, before described optical axis moves to the substrate inner region from the substrate exterior domain, begin to shine described CW laser beam, and at described optical axis after the substrate inner region moves to the substrate exterior domain, stop to shine described CW laser beam, stop irradiation so pulse type laser beam and CW laser beam are kept during required except the formation of line used for cutting, therefore, has the advantage that can generate necessary line used for cutting with the power consumption of minimum.
Embodiment
Experiment according to inventor etc., when the output that the translational speed that the output that is made as 100mm/s, pulse type laser beam 31 in the translational speed with the optical axis that passes through XY table top mechanism in the 1st step (form pulse type laser illuminated line 10) is made as the optical axis that passes through XY table top mechanism in 20W (repetition rate 50kHz), the 2nd step (forming CW laser illuminated line 11) is made as 40mm/s, CW laser is made as 20W, can access the line of the degree of depth with 240～260 μ m.If considering the degree of depth of the resulting line of method of the laser that has only used single oscillation method (CW laser) by in the past is before and after the 50 μ m, to have confirmed can obtain depth of score compared with the past 4～5 times in the present invention.
Utilizability on the industry
According to the formation method of line used for cutting of the present invention, to having embedded the transparent substrate of device circuitry (for example, Sapphire Substrate, liquid-crystalline glasses substrate) etc., can be with for those device circuitry hot Impact is suppressed to form minimum the time cuts off the line of the required abundant degree of depth of substrate, and, can with Low cost realizes and need not significantly to change in the past system.
Claims (6)
1. the formation method of a line used for cutting, the laser beam of the provision wavelengths that the transparent substrate illumination that embedded device circuitry is generated from laser oscillator, simultaneously described substrate and described bundle are relatively moved, thereby on described substrate, form the method that substrate cuts off the line of usefulness, it is characterized in that, comprising:
The 1st step, by described substrate is driven the pulse type laser beam obtain and relatively moves with described laser oscillator being carried out Q-switch, thereby only to the described pulse type laser beam of internal radiation between the regulation Microcell that the edges of substrate on the preset lines begins that cuts off from setting at described substrate; And
The 2nd step, by described substrate is relatively moved with described laser oscillator being driven continuously the CW laser beam that obtains, thereby to cutting off a edges of substrate on the preset lines to the described CW laser beam of whole interval irradiation of another edges of substrate from what set at described substrate.
2. the formation method of line used for cutting as claimed in claim 1 is characterized in that,
The processing of described the 1st step comprises: along on described substrate, set in length and breadth cut off preset lines, the optical axis of laser beam is indulged worn scanning or cross scanning, simultaneously only to interior processing between the regulation Microcell from the substrate exterior domain enters the substrate inner region after to substrate illumination pulse type laser beam, and
The processing of described the 2nd step comprises: along on described substrate, set in length and breadth cut off preset lines, the optical axis of laser beam is indulged worn scanning or cross scanning, simultaneously to after the substrate exterior domain enters the substrate inner region, withdrawing from whole intervals of substrate exterior domain processing substrate illumination CW laser beam from the substrate inner region.
3. the formation method of line used for cutting as claimed in claim 2 is characterized in that,
Described transparent substrates is to divide the Sapphire Substrate that each rectangular area that forms has been embedded in device circuitry by the preset lines of cutting off in length and breadth, and described laser oscillator is the YVO laser oscillator.
4. the formation device of a line used for cutting is characterized in that, comprising:
The XY table top has been used to put and the fixedly embedded transparent substrates of device circuitry;
The laser beam production part by laser oscillator is carried out pulsed drive or Continuous Drive, penetrates in pulse type laser beam and the CW laser beam any thereby can select a ground;
The bundle import optical system is used for and will with the optical axis of stipulating the substrate that puts and be fixed on the described XY table top be shone from the laser beam that described laser beam production part produces;
The path setting parts by described XY table top and described optical axis are relatively moved, make the mobile route that cut off preset lines optical axis when moving of optical axis on described substrate thereby be set on the described XY table top;
The slight distance set parts along the preset lines of setting of cutting off, is set the slight distance of the regulation that should measure to the other end that is equivalent to edges of substrate from an end that is equivalent to edges of substrate on described substrate;
The bundle mobile control unit is controlled moving of described XY table top, makes described optical axis move along the mobile route of the optical axis of setting in described path setting parts;
The 1st bundle irradiation control assembly, in the 1st scanning that described optical axis is moved along described set path, by penetrating the pulse type laser beam from described laser beam production part in suitable timing, thereby only in the slight distance interval that a end that is equivalent to edges of substrate on the preset lines begins from cutting off of setting at described substrate is set by described slight distance set parts, to described substrate illumination pulse type laser beam; And
The 2nd bundle irradiation control assembly, in the 2nd scanning that described optical axis is moved along described set path, by penetrating the CW laser beam from described laser beam production part in suitable timing, thereby only to cutting off a end that is equivalent to edges of substrate on the preset lines in whole intervals of the other end that is equivalent to edges of substrate, to described substrate illumination CW laser beam from what set at described substrate.
5. the formation device of line used for cutting as claimed in claim 4 is characterized in that,
Described the 1st bundle irradiation control assembly before described optical axis moves to the substrate inner region from the substrate exterior domain, begins to shine described pulse type laser beam, and waits for that described optical axis by between described Microcell, stops to shine described pulse type laser beam,
Described the 2nd bundle irradiation control assembly before described optical axis moves to the substrate inner region from the substrate exterior domain, begins to shine described CW laser beam, and at described optical axis after the substrate inner region moves to the substrate exterior domain, stop to shine described CW laser beam.
6. the formation device of line used for cutting as claimed in claim 5 is characterized in that,
Described transparent substrates is to divide the Sapphire Substrate that each rectangular area that forms has been embedded in device circuitry by the preset lines of cutting off in length and breadth, and described laser oscillator is the YVO laser oscillator.
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| CN104136967A (en) * | 2012-02-28 | 2014-11-05 | 伊雷克托科学工业股份有限公司 | Method and apparatus for separation of strengthened glass and articles produced thereby |
| US10357850B2 (en) | 2012-09-24 | 2019-07-23 | Electro Scientific Industries, Inc. | Method and apparatus for machining a workpiece |
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| JP5839383B2 (en) * | 2011-03-18 | 2016-01-06 | 株式会社ディスコ | Wafer processing method |
| JP5912287B2 (en) | 2011-05-19 | 2016-04-27 | 株式会社ディスコ | Laser processing method and laser processing apparatus |
| JP5868193B2 (en) * | 2012-01-24 | 2016-02-24 | 株式会社ディスコ | Wafer processing method |
| US9828278B2 (en) | 2012-02-28 | 2017-11-28 | Electro Scientific Industries, Inc. | Method and apparatus for separation of strengthened glass and articles produced thereby |
| US9776906B2 (en) | 2014-03-28 | 2017-10-03 | Electro Scientific Industries, Inc. | Laser machining strengthened glass |
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| US6211488B1 (en) * | 1998-12-01 | 2001-04-03 | Accudyne Display And Semiconductor Systems, Inc. | Method and apparatus for separating non-metallic substrates utilizing a laser initiated scribe |
| US6562698B2 (en) | 1999-06-08 | 2003-05-13 | Kulicke & Soffa Investments, Inc. | Dual laser cutting of wafers |
| DE60117036T2 (en) * | 2000-12-15 | 2006-08-03 | Xsil Technology Ltd. | LASER PROCESSING OF SEMICONDUCTOR MATERIALS |
| JP4422463B2 (en) * | 2003-11-07 | 2010-02-24 | 株式会社ディスコ | Semiconductor wafer dividing method |
| KR20070097189A (en) * | 2006-03-28 | 2007-10-04 | 삼성전자주식회사 | Method for dividing substrate and substrate dividing apparatus for using it |
| JP2008194729A (en) * | 2007-02-13 | 2008-08-28 | Fujitsu Ltd | Manufacturing method, laser beam machining method and laser beam machining apparatus for small device |
| JP2009220142A (en) | 2008-03-17 | 2009-10-01 | Sony Corp | Laser beam machining apparatus and laser beam machining method |
| JP2009226725A (en) * | 2008-03-21 | 2009-10-08 | Citizen Finetech Miyota Co Ltd | Laser scribing method of sapphire substrate |
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| CN104136967A (en) * | 2012-02-28 | 2014-11-05 | 伊雷克托科学工业股份有限公司 | Method and apparatus for separation of strengthened glass and articles produced thereby |
| US10357850B2 (en) | 2012-09-24 | 2019-07-23 | Electro Scientific Industries, Inc. | Method and apparatus for machining a workpiece |
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| KR20100031462A (en) | 2010-03-22 |
| CN101670487B (en) | 2013-01-09 |
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| JP2010093244A (en) | 2010-04-22 |
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