CN101657890B - Method for manufacturing chip with adhesive - Google Patents

Method for manufacturing chip with adhesive Download PDF

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Publication number
CN101657890B
CN101657890B CN2008800122285A CN200880012228A CN101657890B CN 101657890 B CN101657890 B CN 101657890B CN 2008800122285 A CN2008800122285 A CN 2008800122285A CN 200880012228 A CN200880012228 A CN 200880012228A CN 101657890 B CN101657890 B CN 101657890B
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China
Prior art keywords
chip
layer
close
wafer
stationary fixture
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Expired - Fee Related
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CN2008800122285A
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Chinese (zh)
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CN101657890A (en
Inventor
濑川丈士
泉直史
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Lintec Corp
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Lintec Corp
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Die Bonding (AREA)
  • Dicing (AREA)

Abstract

The invention provides a method for manufacturing a chip with adhesive, in which the need for pushing up the chip is eliminated while involving such pick up as the holding force of a chip not yet picked up does not vary as the pick up progresses. Under a state where a die bond adhesive layer (24) and a wafer (1) are laminated on the adhesion layer (31) of a fixed jig (3), a chip (13) is formed by cutting the wafer (1) and the die bond adhesive layer (24) completely and then the chip (13) is picked up from the fixed jig (3) together with the die bond adhesive layer (24) by deforming the adhesion layer (31) of thefixed jig (3). In such a method for manufacturing a chip with adhesive, the fixed jig (3) has the adhesion layer (31) and a jig base (30), which has a plurality of protrusions on one side and a sidewall (35), on the outer circumference thereof. The adhesion layer (31) is laminated on the surface of the jig base (30) provided with the protrusions and bonded on the upper surface of the sidewall (35). On the surface of the jig base (30) provided with the protrusions, a partitioned space (37) is formed by the adhesion layer (31), the protrusions and the sidewall (35). The jig base (30) is provided with at least one through hole (38) penetrating the outside and the partitioned space (37), and the adhesion layer (31) can be deformed by sucking air in the partitioned space (37) via the through hole (38) of the fixed jig (3).

Description

The manufacturing approach of band bonding agent chip
Technical field
The present invention relates to a kind of manufacturing approach that on a surface of chip, is provided with the band bonding agent chip of bonding agent, relate in particular to and utilize the wafer that grinds to form as thin as a wafer to make the method for monolithic band bonding agent chip with no damage.
Background technology
Semiconductor device with substrate on installing during semiconductor chip, film-like adhesive is used with bonding agent as chip bonding.In advance film-like adhesive is sticked on the semiconductor wafer, and it is made band bonding agent chip with semiconductor wafer cutting.Because film-like adhesive is different with the pasty state bonding agent, can not overflow and can not tilt from chip because of crawling makes chip, the bonding agent of therefore special chip chamber use as the chip stack type semiconductor device that a plurality of semiconductor chips are piled up uses.
In addition, along with popularizing of portable electric appts and IC-card etc., people hope the further slimming of semiconductor device.Therefore, just having produced existing thickness is that semiconductor chip about 350 μ m is thinned to the thickness of 50～100 μ m or the necessity below it.Certainly, even this as thin as a wafer semiconductor chip also hopes it is the band bonding agent chip that has film-like adhesive.
But for cut crystal, film-like adhesive is sometimes to use with the range upon range of form of cutting sheet material.At this moment, the adhering agent layer and the film-like adhesive layer of cutting sheet material become the interface of peeling off when picking up.For with picking up the chip that pin picked up and peeled off bonding interface, the stronger top of going up must be arranged more at ordinary times, may cause chip damaged at chip as thin as a wafer the time.In addition, above-mentioned film-like adhesive is through adding thermo-compressed and bonding wafer.Because in heating and pressurization or range upon range of back after the elapsed time, the adhering agent layer of cutting sheet material and the bonding force at the interface of film-like adhesive interlayer have the trend of rising, so difficulty pick-up chip safely more.
On the other hand, such adhesive sheet listing is arranged also: its not extra use cutting sheet material, have the bond layer that can peel off laminated with base material, can be used for cutting and chip bonding.In above-mentioned adhesive sheet, though the problem that does not rise because of the bonding force on adhering agent layer and the range upon range of interface that causes of bond layer must be set shortly in to obtain the problem of stable pickup force but have between the operating period.
Like this, when pickup force was big, even chip does not have breakage in appearance, portion also can produce damage within it, had used the semiconductor device of this chip can produce encapsulation cracking etc. because of the experience thermal process, and quality lacks reliability.
Therefore, for addressing the above problem, the pick-up method of the band bonding agent that does not carry out pushing up on the fine needle had been discussed once.(with reference to patent documentation 1) these methods adopt the raw-material absorption workbench of porous to replace the sheet material of adhering, and when pick-up chip, stop the absorption of absorption workbench, eliminate the confining force of chip.But in said method, the slit of chip chamber is not sealed and is had air leaks, and each pick-up chip leakage can increase.The confining force that in view of the above, can produce the chip that is stayed not picking up reduces, because of vibration makes the position of chip the problem that skew and chuck can't be clamped chip etc. takes place.
Patent documentation 1: Japanese Patent Laid is opened the 2003-179126 communique
Disclosure of an invention
Invent technical problem to be solved
According to the problems referred to above, the object of the present invention is to provide a kind of manufacturing approach with the bonding agent chip, it need be to not pushing up on the chip, and in the confining force change of picking up the chip that can not take place in carrying out not picked up.
The technical scheme that the technical solution problem is adopted
For reaching above-mentioned purpose; The manufacturing approach of band bonding agent chip of the present invention be a kind of have under the state of being close to layer laminated and having chip bonding bond layer and wafer of stationary fixture above-mentioned wafer and said chip bonding bond layer are cut off to form chip fully; And the above-mentioned manufacturing approach of being close to the band bonding agent chip of the characteristic that layer distortion pick up said chip from the said fixing anchor clamps with said chip bonding bond layer through making the said fixing anchor clamps; It is characterized in that; The said fixing anchor clamps comprise above-mentioned layer and the anchor clamps base station be close to; On a surface of this anchor clamps base station, there are a plurality of thrusts and peripheral part that the height sidewall roughly the same with the height of this thrust arranged on this surface; The above-mentioned layer of being close to is in the surperficial laminated that above-mentioned thrust is arranged of above-mentioned anchor clamps base station and bonding at the upper surface of above-mentioned sidewall; Be formed with on the surface that above-mentioned thrust is arranged of above-mentioned anchor clamps base station by above-mentioned and be close to the division space that layer, above-mentioned thrust and above-mentioned sidewall constitute; Above-mentioned base station is provided with at least one and makes through hole outside and that above-mentioned division space connects, and the air that can aspirate through the above-mentioned through hole via the said fixing anchor clamps in the above-mentioned division space makes the above-mentioned layer distortion of being close to.
At this, the present invention is preferably in above-mentioned being close on the layer of said fixing anchor clamps and forms the state according to the sequential cascade of said chip bonding bond layer and above-mentioned wafer across releasing sheet.
In addition, the present invention also can form the state according to the sequential cascade of above-mentioned wafer and said chip bonding bond layer across protection with the adhesion sheet material in above-mentioned being close on the layer of said fixing anchor clamps.
And the present invention also can be close to the state of sequential cascade that forms according to above-mentioned wafer, said chip bonding bond layer on the layer and be used to protect the releasing sheet of said chip bonding bond layer said fixing anchor clamps above-mentioned.
In above-mentioned the present invention, also can be applied to wafer is cut off fully and forms the situation of chip on stationary fixture.
In addition; The present invention be a kind of have under the state of being close to the wafer after layer laminated has chip bonding bond layer and singualtion of stationary fixture said chip bonding bond layer is cut off according to the profile of chip fully; And the above-mentioned manufacturing approach of being close to the band bonding agent chip of the characteristic that layer distortion pick up said chip from the said fixing anchor clamps with said chip bonding bond layer through making the said fixing anchor clamps; It is characterized in that; The said fixing anchor clamps comprise above-mentioned layer and the anchor clamps base station be close to; There are a plurality of thrusts and peripheral part that the height sidewall roughly the same with the height of this thrust arranged on this surface on a surface of this anchor clamps base station; The above-mentioned layer of being close to is in the surperficial laminated that above-mentioned thrust is arranged of above-mentioned anchor clamps base station and bonding at the upper surface of above-mentioned sidewall; Be formed with on the surface that above-mentioned thrust is arranged of above-mentioned anchor clamps base station by above-mentioned and be close to the division space that layer, above-mentioned thrust and above-mentioned sidewall constitute, above-mentioned base station is provided with at least one and makes outside through hole that connects with above-mentioned division space, and the air that can aspirate through the above-mentioned through hole via the said fixing anchor clamps in the above-mentioned division space is out of shape the above-mentioned layer of being close to.
At this, the present invention is preferably in above-mentioned being close on the layer of said fixing anchor clamps and forms the state according to the sequential cascade of the wafer after said chip bonding bond layer and the singualtion across releasing sheet.
And the present invention also can form the state according to the sequential cascade of wafer after the singualtion and said chip bonding bond layer across protection with the adhesion sheet material in above-mentioned being close on the layer of said fixing anchor clamps.
In addition, the present invention also can be close to the state of sequential cascade that forms according to the wafer after the singualtion, said chip bonding bond layer on the layer and be used to protect the releasing sheet of said chip bonding bond layer said fixing anchor clamps above-mentioned.
Also can be applied to so in the present invention the wafer after other operation monolithics change into many chips is in advance carried the situation of putting on stationary fixture.
The invention effect
According to the manufacturing approach of band bonding agent chip of the present invention, because need be through fine needle to not pushing up on the chip, the suction force of only leaning on the absorption chuck just can pick-up chip, so can not bring damage to chip.In addition, even continuous pick-up chip, being close to state and also can not changing of the chip that on stationary fixture, stays therefore need be for preventing that chip position from skew taking place do not adjust the such operation of absorption affinity in the rear half stage of picking up.
Therefore, even the chip of processing extremely thinly also can carry out picking up of chip, and can transfer to the chip bonding operation safely.
Description of drawings
Fig. 1 is the general profile chart of the stationary fixture that in the manufacturing approach of band bonding agent chip of the present invention, uses.
Fig. 2 is the general view that constitutes the anchor clamps base station of stationary fixture shown in Figure 1.
Fig. 3 (A) is the general profile chart of state of the operation 1A of expression first execution mode, and Fig. 3 (B) is the general profile chart of state of the operation 1B of expression first execution mode, and Fig. 3 (C) is the general profile chart of state of the operation 1C of expression first execution mode.
Fig. 4 is the general view of the semiconductor wafer before the cutting of using in the present invention.
Fig. 5 is the general profile chart of the stickup operation when on wafer, pasting protection with the adhesion sheet material.
Fig. 6 is the general profile chart of grinding back surface operation.
Fig. 7 is the general profile chart of the stickup operation when on wafer, pasting adhesive sheet.
Fig. 8 is the general profile chart of the pick device of use in picking up.
Fig. 9 is the general profile chart when in first execution mode of the present invention, on stationary fixture, picking up.
Figure 10 (A) is the general profile chart of the operation 2A of expression second execution mode, and Figure 10 (B) is the general profile chart of the operation 2B of expression second execution mode, and Figure 10 (C) is the general profile chart of the operation 2C of expression second execution mode.
Figure 11 (A) is the general profile chart of the operation 3A of expression the 3rd execution mode, and Figure 11 (B) is the general profile chart of the operation 3B of expression the 3rd execution mode, and Figure 11 (C) is the general profile chart of the operation 3C of expression the 3rd execution mode.
Figure 12 is the general profile chart that from wafer, will protect the stripping process when peeling off with the adhesion sheet material.
Figure 13 (A) is the general profile chart of the operation 4A of expression the 4th execution mode, and Figure 13 (B) is the general profile chart of the operation 4B of expression the 4th execution mode, and Figure 13 (C) is the general profile chart of the operation 4C of expression the 4th execution mode.
(symbol description)
1 wafer
3 stationary fixtures
4 vacuum plants
13 chips
20 adhesive sheets
22 releasing sheets
24 chip bonding bond layers
25 protections are with the adhesion sheet material
30 anchor clamps base stations
31 are close to layer
35 sidewalls
36 thrusts
37 division spaces
38 through holes
70 absorption chucks
The singualtion wafer of the aggregate of the chip after 80 conducts are cut off
100 pick devices
Embodiment
Followingly embodiments of the invention are described with reference to accompanying drawing.
[stationary fixture]
Fig. 1 representes the stationary fixture that uses in the present invention, and the stationary fixture of Fig. 1 is in the manufacturing approach of band bonding agent chip of the present invention, to use.
As shown in Figure 1, the stationary fixture 3 that uses in the present invention by anchor clamps base station 30 be close to layer 31 and form.Shape as anchor clamps base station 30 for example has: sub-circular, approximate ellipsoidal, approximate rectangular, approximate polygon wherein are preferably sub-circular.Like Fig. 1 and shown in Figure 2, on the surface of a side of anchor clamps base station 30, a plurality of thrust 36 skies are opened the compartment of terrain to the tab-like one-tenth in top.The shape of thrust 36 does not have special qualification, but is preferably cylindrical or truncated cone.In addition, the peripheral part on the surface that above-mentioned thrust 36 is arranged is formed with the height sidewall 35 roughly the same with the height of thrust 36.In addition, have in the surperficial laminated that thrust 36 is arranged of anchor clamps base station 30 and be close to layer 31.Above-mentionedly be close to the upper surface that layer 31 is bonded in sidewall 35, be close in addition layer 31 both can with the upper surface of thrust 36 is bonding can be not bonding with it yet.Be formed with by thrust 36, sidewall 35 on the surface that thrust 36 is arranged of anchor clamps base station 30 and be close to the division space 37 that layer 31 constitutes.These are divided space 37 and are communicated with all.
On the other hand, on the surface that does not have thrust 36 of anchor clamps base station 30 along the thickness direction of anchor clamps base station 30 be provided with the outside of above-mentioned face side with divide the through hole 38 that space 37 connects.Through hole 38 both can be provided with one at least on anchor clamps base station 30, also can on anchor clamps base station 30, be provided with a plurality of.In addition, also can through hole 38 be set on the horizontal direction of anchor clamps base station 30 and the through hole 38 that peristome replaces the surface that does not have thrust 36 of anchor clamps base station 30 is being set on sidewall 35.Through in the peristome of above-mentioned through hole 38, connecting the vacuum plant that can freely load and unload, the gases of dividing in the space 37 are discharged from and make be close to layers 31 be out of shape become concavo-convex.
The material of anchor clamps base station 30 for example has: thermoplastic resins such as Merlon, polypropylene, polyethylene, polyethylene terephthalate resin, acrylic resin, polyvinyl chloride as long as mechanical strength is not well done special qualification; Aluminium alloy, magnesium alloy, stainless steel and other metal materials; Inorganic material such as glass; Organic/inorganic composite materials such as glass fiber reinforced epoxy resin etc.The modulus of elasticity in static bending of anchor clamps base station 30 is preferably more than the 1GPa.If have the above-mentioned modulus of elasticity in static bending, the thickness that does not then need excessively to thicken anchor clamps base station 30 just can be given its rigidity.Through adopting above-mentioned material, can make the chip can be crooked in being close to the handling process of stationary fixture 3 backs till be loaded into pick device, and skew and chip disengaging that can the generation chip position.
The external diameter of anchor clamps base station 30 is preferably roughly the same or bigger than the external diameter of semiconductor wafer with the external diameter of semiconductor wafer.If anchor clamps base station 30 has the external diameter of the maximum gauge (for example diameter 300mm) of specification that can corresponding semiconductor wafer, then can on the whole semiconductor wafers littler, use than this diameter.In addition, the thickness of anchor clamps base station 30 is preferably 0.5～2.0mm, is more preferably 0.5～0.8mm.If the thickness of anchor clamps base station 30 in above-mentioned scope, then can not make wafer bending and can fully support behind the grinding back surface of wafer.
The height of thrust 36 and sidewall 35 is more preferably 0.05～0.5mm.In addition, the diameter of the upper surface of thrust 36 is preferably 0.05～1.0mm.And the interval of thrust (distance between the thrust center) is preferably 0.2～2.0mm.If the interval of the size of thrust 36 and thrust is in above-mentioned scope, then through divide bleeding in the space 37 can make be close to layer 31 fully distortion become concavo-convex, and can be with taking off on the easily urgent paste layer 31 of semiconductor chip.And, even repeat repeatedly to be close to the deformation of unevenness of layer 31, also can constantly be returned to original flat condition.
The diameter of through hole 38 does not have special qualification, but is preferably below the 2mm.
Above-mentioned anchor clamps base station 30 for example can heat shaping with mould by thermoplastic resin material; Bottom, sidewall 35 and thrust 36 one manufacturings with the anchor clamps base station; Also can on the planar rondure plate, form sidewall 35 and protrusion 36 is made, perhaps also can on the recess inner surface of matrix plectane, form thrust 36 and make.Formation method as thrust 36 for example has: the method that metal is separated out through electrocasting with the regulation shape forms the method for thrust through silk screen printing, in planar rondure plate laminated photoresist and exposure, develop and form the method etc. of thrust.The surface of in addition, can also form the method for part to stay thrust through corrode the surface remove metallic planar rondure plate with etching, removing the planar rondure plate with sandblast is waited with the method that stays thrust and form part and is made anchor clamps base station 30.In addition, through hole 38 both can be pre-formed before thrust 36 forms, and also can form the back at thrust 36 and form.In addition, also can in the moulding of anchor clamps base station, form.
As the material of being close to layer 31 of configuration on the anchor clamps base station 30, the elastomer of good polyurethanes, acrylic compounds, fluorine class or silicone such as flexibility, flexibility, thermal endurance, elasticity, adherence is for example arranged.In above-mentioned elastomer, also can add various additives such as adding epistasis filler and hydrophobic silica as required.
Be close to the roughly the same flat board of shape that layer 31 is preferably shape and anchor clamps base station 30, the external diameter of being close to layer 31 is preferably roughly the same with the external diameter of anchor clamps base station 30, and thickness is preferably 20～200 μ m.If be close to the thickness less than 20 μ m of layer 31, then can be to the durability mechanically of suction shortage repeatedly.On the other hand, surpass 200 μ m if be close to layer 31 thickness, then can be when peeling off very time-consuming through suction, bad.
In addition, the tensile break strength of being close to layer 31 is preferably more than the 5MPa, and stretch percentage elongation is preferably more than 500%.If tensile break strength and stretch percentage elongation be in above-mentioned scope,, can be close to the fracture of layer 31 yet and relax and can be returned to original flat condition even then repeat repeatedly to be close to the distortion of layer 31.
In addition, being close to layer 31 the modulus of elasticity in static bending is preferably in the scope of 10～100MPa.If be close to the not enough 10MPa of layer 31 the modulus of elasticity in static bending, the part of then being close to beyond the contact portion that contact with jut 36 of layer 31 can be because of the gravity deflection, can be close to layers 31 situations that can not be close to chip.On the other hand,, then be difficult to deform, the situation that can not easily chip be peeled off can take place through suction if surpass 100MPa.
In addition, the shearing resistance adhesion of being close to the surface of layer 31 a side that contacts with semiconductor wafer is preferably more than the 35N.Shearing resistance adhesion among the present invention is meant the value of between the minute surface of being close to layer 31 and silicon chip, measuring; Be to paste in size to be close to layer 31 and to be configured on the minute surface wafer (mirror wafer) that constitutes by silicon for the well-known glass plate of vertical 30mm * horizontal 30mm * thick 3mm; To glass plate be close to 5 seconds kinds of load that layer 31 integral body applies 900g, measure when glass plate is applied load parallel with the minute surface wafer and extruding just begin to move the time load.
And the adhesion of being close to layer 31 is preferably below the 2N/25mm.If surpass above-mentioned value, then be close to layer 31 and excessive and form the retardance state in the adhesion of being close to the chip of configuration on the layer 31, possibly can't peel off chip through suction.In addition, the adhesion among the present invention is meant being close to that layer 31 sticks on the minute surface of wafer and peel strength when it is peeled off.
Can make the film that constitutes by above-mentioned elastomer in advance and the upper surface that above-mentioned elastomer film is bonded in the sidewall at least 35 of anchor clamps base station 30 is formed the above-mentioned layer 31 of being close to through for example rolling process, pressing, cladding process or print process etc.; In view of the above, form division space 37.As the bonding above-mentioned method of being close to layer 31; For example have: by (Japanese: エ ラ ス ト マ one resin) bonding agent of Gou Chenging carries out bonding method, carries out bonding method by heat-sealing when being close to layer 31 for heat sealability by acrylic resin, mylar, epoxy resin, silicone resin or elastic resin.
On the surface of being close to layer 31, also can carry out non-adhesion and handle, especially, the laminar surface of being close on thrust 36 tops that contact with semiconductor chip when being preferably only to concavo-convex distortion carries out non-adhesion processing.If carry out above-mentioned processing; Then be close to layer 31 before distortion can be close to laminar surface do not carry out adhere to semiconductor chip on the part that non-adhesion handles; After the concavo-convex distortion be close to layer 31 only on the surface on thrust 36 tops, be that the protuberance surface of Abherent contacts with semiconductor chip; Therefore, can be more easily with taking off on the urgent paste layer 31 of semiconductor chip.As non-adhesion processing method; Whetslate ロ one ラ one) etc. for example have: divide air in the space 37 through vacuum plant suction and make and be close to layer 31 concavo-convex distortion and protuberance is most advanced and sophisticated through emery wheel roller (Japanese: the method for carrying out roughening physically; The method that ultraviolet is handled; The method of range upon range of Abherent rubber applies the method for non-stick paints etc.The arithmetic average roughness Ra of the surface roughness of non-adhesive part is preferably more than the 1.6 μ m, better is 1.6～12.5 μ m.Through non-adhesive part is carried out roughening according to the surface roughness in the above-mentioned scope, then be close to layer 31 and deterioration can not take place, and semiconductor chip can take off on the easily urgent paste layer 31.
In the present invention, prepare the stationary fixture 3 that forms as stated above in advance.
[adhesive sheet]
Shown in Fig. 3 (A)～(C), in the present invention, the chip bonding bond layer 24 that is finally picked up with chip 13 is preferably by adhesive sheet 20 and provides.That is, adhesive sheet 20 has a layer structure, in releasing sheet 22 laminated of the peel ply with silicone etc. the chip bonding bond layer 24 that can peel off is arranged.For keeping adhesive sheet 20 exposes face with protection, also can with other releasing sheet of chip bonding bond layer 24 opposite surfaces laminated.
Chip bonding bond layer 24 is made up of thermosetting or thermoplastic resin combination, on releasing sheet 22 or other releasing sheet, is coated with to come cambium layer and make adhesive sheet 20 through the coating fluid with this resin combination.
The chip bonding bond layer 24 that is made up of heat cured resin combination that uses in the present invention for example has the mixture of adhesion resin and thermosetting resin.
Adhesion resin as constituting thermosetting resin composition for example has: acrylic resin, mylar, polyvinylether resin, polyurethane resin, polyamide etc.As thermosetting resin, for example can adopt epoxy resin, ethylene acid resin, polyimide resin, phenolic resins, urea resin, melamine resin, resorcinol resin etc., wherein be preferably employing epoxy resin.And it is thermosetting resin cured also can to use curing agent to make.In addition, be uv curing resins such as mixing the polyurethanes acrylate oligomer in the adhesive chip bonding bond layer 24 at normal temperatures in order to control the fissility with releasing sheet 22, to be preferably.If mix uv curing resin, then releasing sheet 22 can adhere to chip bonding bond layer 24 before ultraviolet irradiation well, and after ultraviolet irradiation, peels off easily.
The chip bonding bond layer 24 that is made up of thermosetting resin composition that uses in the present invention both can be that the adherence bond layer also can be the Abherent bond layer at normal temperatures.Being adhesive chip bonding bond layer 24 under the normal temperature can be that the heat treated of room temperature or lower temperature is come bonding through proceeding to interim temperature till bonding in the chip bonding process; This with the condition of chip bonding bond layer 24 complete hot curings is differed greatly, so carry out temperature treatment easily.In addition, the chip bonding bond layer 24 that is non-cementability under the normal temperature does not also finish to be difficult to be involved in air in moment of chip bonding owing to interim bonding.Substantially, if the adhesion resin that uses is an adherence, then chip bonding bond layer 24 is adhesive, if the adhesion resin that uses is an Abherent, then chip bonding bond layer 24 right and wrong are adhesive.
The thickness of chip bonding bond layer 24 is according to the difference of the surface configuration of the object bonding through the chip bonding of wiring substrate etc. and difference, but is generally 3～100 μ m, is preferably 10～50 μ m.
As releasing sheet 22; For example can adopt the resin system film of softers such as polyethylene film, polypropylene screen, polybutene film, polybutadiene film, polymethylpentene film, polychloroethylene film, vinyl chloride copolymer film, polyurethane film, ethylene vinyl acetate film, ionomer resin, ethene-(methyl) acrylic copolymer film, ethene-(methyl) acrylate copolymer film, fluororesin film, polyethylene terephthalate film, PEN film, polybutylene terephthalate film, polystyrene film, polycarbonate membrane, polyimide film etc. are than the resin system film of hard.
As the resin system film that in releasing sheet 22, uses, both can be the monofilm that is selected from above-mentioned film, also can be stacked film.Can also use their cross linking membrane in addition.When under the state that releasing sheet 22 is laminated in chip bonding bond layer 24, being laminated in being close to layer 31 and using of stationary fixture 3, releasing sheet 22 adopts the resin system film of softers, so as be close to layers 31 and be out of shape through suction equally.Releasing sheet 22 be not laminated in stationary fixture 3 be close to the layer 31 o'clock, also can use resin system film than hard.
Because releasing sheet 22 can peel off with chip bonding bond layer 24, therefore be preferably in the lip-deep surface tension of joining with chip bonding bond layer 24 for a short time, for example be preferably below the 40mN/m.The resin system film that surface tension is little not only can suitably select material to obtain, and remover that in addition also can be through silicon-coated ketone resin on the surface of resin system film etc. also carries out lift-off processing and obtains.
The thickness of releasing sheet 22 is generally 10～500 μ m, is preferably 15～300 μ m, and the spy is well about 20～250 μ m.
[wafer]
Wafer 1 as using in the present invention for example has: the semiconductor wafer that is made up of silicone, compound semiconductor, the wafer that is made up of insulating material such as glass, potteries.When using semiconductor wafer as wafer 1, for example use face side to be formed with circuit and rear side by attrition process, as shown in Figure 4 as yet through cutting etc. and the wafer of singualtion.With regard to wafer 1,, therefore can enjoy effect of the present invention especially because for example the wafer of the very narrow thickness below the 100 μ m is only just damaged easily under self gravitation.
In addition, in the present invention, the wafer (singualtion wafer 80) after the state of the aggregate of the chip 13 that will under the state of the contour shape of the wafer before keeping cutting, form by each circuitry cuts is called singualtion.
[protection is with the adhesion sheet material]
The protection of using in embodiments of the present invention can and use the wafer grinding of on market, peddling with adhesion zone (BG adhesive tape) by the suitable selection of implementer with adhesion sheet material 25.Specifically, the adhesion sheet material is to be base material and the good adhering agent layer of releasable that has ultraviolet hardening etc. at base material one-sided with resin system film.
Protection is clipped in being close between layer 31 and the wafer 1 during range upon range of uses of stationary fixture 3 with adhesion sheet material 25, protection with the resin system film of adhesion sheet material 25 employing softers as base material so that be close to layers 31 and be out of shape through suction equally.The protection with the adhesion sheet material 25 be not laminated in stationary fixture 3 be close to the layer 31 o'clock, also can the resin system film than hard be used as base material.
[first execution mode]
First execution mode of the present invention is clipped releasing sheet 22 on 31 and is formed the operation (operation 1A) according to the state of the sequential cascade of chip bonding bond layer 24 and wafer 1 by the layer of being close at stationary fixture 3 shown in Fig. 3 (A); Above-mentioned wafer 1 and said chip bonding bond layer 24 are cut off to form the operation (operation 1B) of chip 13 fully shown in Fig. 3 (B); And passing through shown in Fig. 3 (C) makes above-mentioned operation (operation 1C) composition of being close to layer 31 distortion and said chip 13 being picked up from said fixing anchor clamps 3 with said chip bonding bond layer 24 of said fixing anchor clamps 3.
The wafer 1 that provides in this execution mode is to form the wafer that carries out grinding back surface behind the circuit from the teeth outwards.When carrying out the grinding back surface operation; As shown in Figure 5, stickup is used to protect the protection in loop to use adhesion sheet material 25 on the circuit surface 1a of wafer 1, and as shown in Figure 6; Through the back side of reverse lapping device 26 grinding wafers 1, with wafer 1 be adjusted to as thin as a wafer thickness, for example about 50 μ m.Then, as shown in Figure 7, in chip bonding bond layer 24 sides of the abradant surface laminated adhesive sheet 20 of wafer 1, and will protect to peel off from the circuit surface 1a of wafer 1 and remove with adhesion sheet material 25.Then, releasing sheet 22 sides on the wafer 1 are contacted in opposite directions with stationary fixture 3 with being close to layer 31, just can form the state of the lamination order among the operation 1A shown in Fig. 3 (A).
Then, shown in Fig. 3 B, carry out wafer 1 and chip bonding bond layer 24 are cut off to form the operation (operation 1B) of chip 13 fully, form chip 13.Cut off and both can carry out, also can carry out through laser cutting method through common blade cuts method.In addition, can also wafer 1 and chip bonding bond layer 24 be cut off through the dual patterning method that carries out with special-purpose blade.
The wafer 1 that on stationary fixture 3, fix is loaded into the treatment bench of shearing devices such as slicing machine as the form of lower surface with stationary fixture 3.If be the structure that prevents that wafer 1 from coming off not and to aspirate from the through hole 38 of stationary fixture 3, then can indiscriminately imitate and use the shearing device that comprises the employed treatment bench in the past that adopts common wafer fixed form.When treatment bench is made up of the porous raw material, only need the shielding and that part of suction of through hole 38 butts to get final product.So just can be with cutting off operation with roughly the same mode and the method for existing method.In addition, because therefore chip bonding bond layer 24 can be cut into releasing sheet 22 those layers with to be close to layer 31 range upon range of across releasing sheet 22,, can reduce the precision of penetraction depth and come pick up speed for improving productivity.
Then, shown in Fig. 3 (C), carry out operation (operation 1C) that chip 13 is picked up from stationary fixture 3 with chip bonding bond layer 24 through layer 31 distortion of being close to that make stationary fixture 3.
The stationary fixture 3 of fixed chip 13 installs to pick device from the shearing device commentaries on classics, picks up operation (operation 1C).The pick device that in this execution mode, uses is the isolated plant that is used to handle stationary fixture 3, specifically, adopts the Japanese Patent Laid of being applied for by applicant of the present invention to be willing to the pick device that discloses among the 2006-283983.As shown in Figure 8; The pick device 100 of this application comprises workbench 51 that stationary fixture 3 is fixed and the absorption chuck 70 that chip 13 suctions are kept, and the adsorption section 50 that workbench 51 has stationary fixture 3 body-fixed is connected with the through hole 38 of stationary fixture 3 and aspirates suction section 52 openings of dividing space 37 and the structure that can adsorb independently respectively with being used for.
Stationary fixture 3 is to make through hole 38 and align with suction section 52 and to be fixed by the mode of adsorption section 50 absorption stationary fixtures, 3 bodies on the workbench 51 of pick device 100.If will be applied to through suction section 52 and through hole 38 by the negative pressure of generations such as vacuum plant 4 and divide space 37, then be close to layer 31 towards dividing space 37 sides distortion.At this, because the resin system film that uses softer is as releasing sheet 22, therefore as Fig. 3 (C) shown in, releasing sheet 22 also can be out of shape along with being close to layers 31 together.Because bonding chip bonding bond layer 24 can not be out of shape on chip 13, therefore as shown in Figure 9, on the interface of 24 of releasing sheet 22 and chip bonding bond layers, peel off only on the position of thrust 36, to put state of contact.
At this, along with the carrying out of picking up, even the ratio of the area that has chip 13 on the stationary fixture 3 changes a lot, the confining force of chip 13 is also proportional with the area of being close to layer 31 that is contacted.Owing to the area of being close to layer 31 that contacts with 13 of every chip blocks can be along with the carrying out of picking up do not change, therefore above-mentioned confining force all is constant to the end.
Then, absorption chuck 70 moves to the position of that chip piece 13 of regulation and relative with chip surface, and through absorption chuck 70 is applied negative pressure, chip 13 has the state of chip bonding bond layer 24 to catch (picking up) by 70 absorption of absorption chuck with range upon range of.
Chip 13 after picking up both can directly carry out chip bonding on the circuit substrate of lead frame etc., also can be temporarily ダ イ ソ one ト テ one プ) etc. (Japanese: the slide glass material keeps, and takes care of to carry and carry out chip bonding again with the die grading band.
In addition, in the above-described embodiment, represented with stationary fixture 3 and chip bonding bond layer 24 across the range upon range of state method down of releasing sheet 22, but also can be not across releasing sheet 22 and the method under the direct range upon range of state.At this moment, only need adhesive sheet 20 is pasted on behind the wafer 1 releasing sheet 22 peeled off to get final product.At this moment, critically cut, so that penetraction depth reaches wafer 1 and is close to 31 interface of layer.
In addition; In the above-described embodiment; To protect with adhesion sheet material 25 and in operation is carried out, peel off; State with the circuit surface 1a that exposes wafer 1 cuts off, but can protection not peeled off with adhesion sheet material 25 yet and pick up before and after the operation or carry out chip bonding after peel off protection with the sheet material 25 of adhering.At this moment, protection is cut off with wafer 1 and chip bonding bond layer 24 in cutting off operation with adhesion sheet material 25 identically, but the damage that the fragment can prevent smear metal and blade breakage time the etc. cause the circuit surface of wafer 1.Protection after the cut-out can utilize separately to peel off with adhesion zone with adhesion sheet material 25 and peel off.
And, in the above-described embodiment, represented on the grinding back surface face of wafer 1, to be provided with the structure of chip bonding bond layer 24, but also can be according to the method for the structure on the circuit surface 1a that chip bonding bond layer 24 is sticked on wafer 1.At this moment, the chip bonding operation adopts the flip-chip mull technique that the circuit surface of circuit substrate and chip 13 is relative, and chip bonding bond layer 24 plays the effect of underfilling.
In addition; In the above-described embodiment; Adopt wafer 1 side formerly to paste behind the chip bonding bond layer 24 again the method range upon range of with stationary fixture 3, but also can be with chip bonding bond layer 24 earlier with stationary fixture 3 range upon range of after again at the surperficial laminated wafer 1 of chip bonding bond layer 24.
[second execution mode]
Then second execution mode of the present invention is described.
A second embodiment of the present invention, the Fig 10 (A) as shown in the fixing jig 3 through the protection layer 31 close to the adhesive sheet 25 is formed using the wafer 1 according to the adhesive layer 24 and the stacked state of the sequence step (Step 2A), in Figure 10 (B) shown in the above-mentioned wafer 1 and the die bonding adhesive layer 24 to form the chip 13 is completely cut off a step (Step 2B), and Figure 10 (C) of the illustrated by the fixing jig 3 of the above-described deformation of the layer 31 will be close to the chip 13 and the chip 24 bonded together with an adhesive agent layer 3 from the fixture picked in step (Step 2C) components.
In this execution mode, also prepare to adopt protection to use and adhere sheet material 25 and grind to form wafer 1 as thin as a wafer, and paste adhesive sheet 20 on the abradant surface overleaf through the mode identical with first execution mode.Then, the protection that sticks on the circuit surface 1a of wafer is contacted with being close to layer 31 with stationary fixture 3 with adhesion sheet material 25 sides in opposite directions, and can be formed on the state of the lamination order among the operation 2A (Figure 10 (A)).In addition, do not peel off the releasing sheet 22 of adhesive sheet 20.
Then, carry out wafer 1 and chip bonding bond layer 24 are cut off to form the operation (operation 2B) of chip 13 fully, form chip 13.The cut-out of carrying out in this execution mode can be indiscriminately imitated cut-out mode and the method for using in above-mentioned first execution mode.And, owing to releasing sheet 22 is arranged in chip bonding bond layer 24 laminated, so releasing sheet 22 also is cut off.Releasing sheet 22 plays the effect that protection chip bonding bond layer 24 is avoided smear metal pollution etc. in cutting off operation.
In addition, because therefore wafer 1 can be cut into protection with adhesion sheet material 25 those layers with to be close to layer 31 range upon range of with adhesion sheet material 25 across protection,, can reduce the precision of penetraction depth and come pick up speed for improving productivity.After cutting off operation and finishing, use the adhesion zone of peeling off usefulness etc. to peel off the releasing sheet of removing on the chip bonding bond layer 24 22.
Then, carry out operation (operation 2C) that chip 13 is picked up from stationary fixture 3 with chip bonding bond layer 24 through layer 31 distortion of being close to that make stationary fixture 3.The pick device that in this execution mode, uses also can use and the identical device of device that uses in the first embodiment.
Stationary fixture 3 is to make through hole 38 and align with suction section 52 and to be fixed by the mode of adsorption section 50 absorption stationary fixtures, 3 bodies on the workbench 51 of pick device 100.If will be applied to through suction section 52 and through hole 38 by the negative pressure of generations such as vacuum plant 4 and divide space 37, then be close to layer 31 towards dividing space side distortion.At this, because protection adopts general soft resin system film as its raw material with adhesive sheet 25, therefore protection also can be along with being close to layer 31 distortion together with adhesion sheet material 25.Owing to chip 13 self can not be out of shape, therefore protection is peeled off (Figure 10 (C)) with adhesion sheet material 25 only on the position of thrust 36, to put state of contact.
Then; Absorption chuck 70 is moved to regulation that chip piece the position and with chip on chip bonding bond layer 24 the surface relatively; Through applying negative pressure to attaching chuck 70, chip 13 has the state of chip bonding bond layer 24 to catch (picking up) by 70 absorption of absorption chuck with range upon range of.
Chip 13 after picking up both can directly carry out chip bonding on the circuit substrate of lead frame etc., after also can temporarily keeping with slide glass materials such as die grading bands, take care of and carry and carry out chip bonding.
In addition, in above-mentioned second execution mode, represented with stationary fixture 3 and wafer 1 across protection with the range upon range of state method down of adhesion sheet material 25, but also can be in the method under the protection state direct range upon range of not with adhesion sheet material 25.At this moment, only need adhesive sheet 20 is pasted on will protect behind the wafer 1 to peel off with the sheet material 25 of adhering to get final product.At this moment, critically cut, so that penetraction depth reaches wafer 1 and is close to 31 interface of layer.In addition, in above-mentioned second execution mode, after cutting off operation, releasing sheet 22 is peeled off, but also can be before stationary fixture 3 is range upon range of, before the cut-out operation or after picking up operation releasing sheet 22 is peeled off.
And, in above-mentioned second execution mode, represented on the grinding back surface face of wafer 1, to be provided with the structure of chip bonding bond layer 24, but also can be according to the method for the structure on the circuit surface that chip bonding bond layer 24 is sticked on wafer 1.At this moment, the chip bonding operation adopts the flip-chip mull technique that the circuit surface of circuit substrate and chip 13 is relative, and chip bonding bond layer 24 plays the effect of underfilling.
In addition; In above-mentioned second execution mode; Adopt wafer 1 side formerly to paste behind the adhesive sheet 20 again the method range upon range of with stationary fixture 3, but also can be with chip 1 earlier with stationary fixture 3 range upon range of after again at the chip bonding bond layer 24 laminated wafers 1 of adhesive sheet 20.
[the 3rd execution mode]
Then the 3rd execution mode of the present invention is described.
The 3rd execution mode of the present invention forms operation (operation 3A) according to the state of wafer bond layer 24 and singualtion after 80 sequential cascades across releasing sheet 22 by the layer of being close at stationary fixture 3 shown in Figure 11 (A) on 31; The operation (operation 3B) that said chip bonding bond layer 24 is cut off according to the profile of chip fully shown in Figure 11 (B); And passing through shown in Figure 11 (C) makes the above-mentioned layer 31 of being close to of said fixing anchor clamps 3 be out of shape operation (operation 3C) composition that said chip 13 is picked up from said fixing anchor clamps 3 with said chip bonding bond layer 24.
Wafer 80 after the singualtion that provides in this execution mode makes through first patterning method.Specifically; Be that the circuit surface side of wafer 1 is carried out the hemisect that the degree of depth surpasses objective chip thickness; Paste protection at circuit surface and grind to reach target thickness, make through the singualtion of carrying out sheet and wafer 1 simultaneously with adhesion sheet material 25 and to rear side.The chip that is made by first patterning method is not easy the generation chip disappearance, compares bending strength in addition with the chip that is made by usual method and is eager to excel, and therefore, can obtain the higher semiconductor device of reliability.
Then, on the grinding back surface face of the wafer after the singualtion 80, paste chip bonding bond layer 24 sides of adhesive sheet 20, releasing sheet 22 sides that make adhesive sheet 20 again and stationary fixture 3 be close to layers 31 and contact in opposite directions.At this, shown in figure 12, protection is peeled off from the circuit surface of wafer 80 with adhesion sheet material 25 and is removed, and can be formed on the state of the lamination order among the operation 3A (Figure 11 (A)).
Then, carry out operation (operation 3B) that chip bonding bond layer 24 is cut off according to the profile of each chip after the singualtion fully.Cut off and both can carry out, also can carry out through laser cutting method through common blade cuts method.In addition, because therefore chip bonding bond layer 24 can cut to releasing sheet 22 those layers with to be close to layer 31 range upon range of across releasing sheet 22,, can reduce the precision of penetraction depth and come pick up speed for improving productivity.
Then, carry out operation (operation 3C) that chip 13 is picked up from stationary fixture 3 with chip bonding bond layer 24 through layer 31 distortion of being close to that make stationary fixture 3.The pick device that in this execution mode, uses also can use and the identical device of device that uses in the first embodiment.
Stationary fixture 3 is to make through hole 38 and align with suction section 52 and to be fixed by the mode of adsorption section 50 absorption stationary fixtures, 3 bodies on the workbench 51 of pick device 100.If will be applied to through suction section 52 and through hole 38 by the negative pressure of generations such as vacuum plant 4 and divide space 37, then be close to layer 31 towards dividing space side distortion.At this, because the resin system film that uses softer is as releasing sheet 22, so releasing sheet 22 also can be out of shape along with being close to layer 31 together.Because bonding chip bonding bond layer 24 can not be out of shape on chip 13, therefore on the interface of 24 of releasing sheet 22 and chip bonding bond layers, peel off (Figure 11 (C)) only on the position of thrust 36, to put state of contact.
Then, absorption chuck 70 is moved to the position of that chip piece 13 of regulation and relative with chip surface, through the negative pressure that absorption chuck 70 is applied, chip 13 has the state of chip bonding bond layer 24 to catch (picking up) by 70 absorption of absorption chuck with range upon range of.
Chip 13 after picking up both can directly carry out chip bonding on the circuit substrate of lead frame etc., after also can temporarily keeping with slide glass materials such as die grading bands, take care of and carry and carry out chip bonding.
In addition, in above-mentioned the 3rd execution mode,, but also can use the wafer 80 after the singualtion of preparing through additive method through the wafer 80 after the first patterning method preparation singualtion.Specifically; Paste protection with adhering sheet material 25 and carry out grinding back surface at the circuit surface of wafer 1; Then fixing protection is cut with adhesion sheet material 25 sides and from the abradant surface side of wafer 1; Then on the grinding back surface face of the wafer after the singualtion 80, paste the chip bonding bond layer 24 of adhesive sheet 20; Releasing sheet 22 sides of adhesive sheet 20 are contacted with being close to layer 31 with stationary fixture 3 in opposite directions, after this remove, just can form the state of the lamination order of the 3rd execution mode through protecting usefulness adhesion sheet material 25 to peel off from the circuit surface of wafer 80.
In addition, in above-mentioned the 3rd execution mode, represented with stationary fixture 3 and chip bonding bond layer 24 across the range upon range of state method down of releasing sheet 22, but also can be not across releasing sheet 22 and the method under the direct range upon range of state.At this moment, only need adhesive sheet 20 is pasted on behind the wafer 1 releasing sheet 22 peeled off to get final product.At this moment, critically cut, so that penetraction depth reaches chip bonding bond layer 24 and is close to 31 interface of layer.
And; In above-mentioned the 3rd execution mode; Protect with adhesion sheet material 25 after 80s the peeling off of stationary fixture 3 laminated wafers; But also can wafer is after 80s peel off protection with adhesion sheet material 25 in that adhesive sheet 20 is pasted on, can accomplish the back and before and after chip bonding, peel off protection cutting off operation in addition with the sheet material 25 of adhering.When after cutting off the operation completion, peeling off; Protection is cut off through cutting off operation with adhesion sheet material 25 is also identical with chip bonding bond layer 24 in cutting off engineering, but the damage that the fragmentation can prevent smear metal and blade breakage time the etc. cause the circuit surface of chip 13.Protection after the cut-out can utilize separately to peel off with adhesion zone with adhesion sheet material 25 and peel off.
In addition; In above-mentioned the 3rd execution mode; Represented on the grinding back surface face of singualtion wafer 80, to be provided with the structure of chip bonding bond layer 24, but also can be according to the method for the structure on the circuit surface that chip bonding bond layer 24 is sticked on singualtion wafer 80.At this moment, the chip bonding operation adopts the flip-chip mull technique that the circuit surface of circuit substrate and chip 13 is relative, and chip bonding bond layer 24 plays the effect of underfilling.
And; In above-mentioned the 3rd execution mode; Adopt singualtion wafer 80 sides formerly to paste behind the chip bonding bond layer 24 again the method range upon range of with stationary fixture 3, but also can be with chip bonding bond layer 24 earlier with stationary fixture 3 range upon range of after again at the surperficial laminated singualtion wafer 80 of chip bonding bond layer 24.
[the 4th execution mode]
Then the 4th execution mode of the present invention is described.
The fourth embodiment of the present invention, the Fig 13 (A) as shown in the fixed jig 3 through the protection layer 31 close to the adhesive sheet 25 is formed with a singulated chips according to 80 and the adhesive layer 24 a state laminated in this order step (Step 4A), Figure 13 (B) shown in the above-described die-bonding adhesive layer 24 is completely cut off in accordance with the shape of the chip a step (Step 4B), and FIG 13 (C ) shown by the above-described jig 3 the fixed layer 31 close to the above-described deformation of the chip 13 and the chip 24 bonded together with an adhesive agent layer 3 from the fixture picked in step (Step 4C) components.
The singualtion wafer 80 that provides in this execution mode is to make with the same manner with the 3rd execution mode, is preferably by first patterning method to make.Then; On the grinding back surface face of singualtion wafer 80, paste chip bonding bond layer 24 sides of adhesive sheet 20; Protection on the singualtion wafer 80 is contacted with being close to layer 31 with stationary fixture 3 with adhesion sheet material 25 in opposite directions, be formed on the state of the lamination order among the operation 4A (Figure 13 (A)).
Then, carry out operation (operation 4B) that chip bonding bond layer 24 is cut off according to the profile of each chip after the singualtion fully.Cut off and both can carry out, also can carry out through laser cutting method through common blade cuts method.Owing in chip bonding bond layer 24 laminated releasing sheet 22 is arranged, therefore cuts off together.Releasing sheet 22 plays the effect that protection chip bonding bond layer 24 is avoided smear metal pollution etc. in cutting off operation.After cutting off operation and finishing, use the adhesion zone of peeling off usefulness etc. to peel off the releasing sheet of removing on the chip bonding bond layer 24 22.
Then, carry out operation (operation 4C) that chip 13 is picked up from stationary fixture 3 with chip bonding bond layer 24 through layer 31 distortion of being close to that make stationary fixture 3.The pick device that in this execution mode, uses also can use and the identical device of device that uses in the first embodiment.
Stationary fixture 3 is to make through hole 38 and align with suction section 52 and to be fixed by the mode of adsorption section 50 absorption stationary fixtures, 3 bodies on the workbench 51 of pick device 100.If will be applied to through suction section 52 and through hole 38 by the negative pressure of generations such as vacuum plant 4 and divide space 37, then be close to layer 31 towards dividing space side distortion.At this, because protection adopts general soft resin system film as its raw material with adhesion sheet material 25, therefore protection also can be along with being close to layer 31 distortion together with adhesion sheet material 25.Owing to chip 13 self can not be out of shape, therefore protection is peeled off (Figure 13 (C)) with adhesion sheet material 25 only on the position of thrust 36, to put state of contact.
Then; Absorption chuck 70 is moved to regulation that chip piece the position and with chip on chip bonding bond layer 24 the surface relatively; Through absorption chuck 70 is applied negative pressure, chip 13 has the state of chip bonding bond layer 24 to catch (picking up) by 70 absorption of absorption chuck with range upon range of.
Chip 13 after picking up both can directly carry out chip bonding on the circuit substrate of lead frame etc., after also can temporarily keeping with slide glass materials such as die grading bands, take care of and carry and carry out chip bonding.
In addition; In above-mentioned the 4th execution mode; Represented with stationary fixture 3 and chip bonding bond layer 24 across protection with the range upon range of state method down of adhesion sheet material 25, but also can be in the method under the protection state direct range upon range of not with adhesion sheet material 25.At this moment, only need with adhesive sheet 20 be pasted on the singualtion wafer after 80s will protect to peel off with the sheet material 25 of adhering get final product.In addition; In above-mentioned the 4th execution mode; Releasing sheet 22 is peeled off after operation is carried out cutting off, but also can the singualtion wafer is after 80s peels off releasing sheet 22 in that adhesive sheet 20 is pasted on, also can be carried out before and after the chip bonding releasing sheet 22 being peeled off after operation finishes cutting off in addition.
And; In above-mentioned the 4th execution mode; Represented on the grinding back surface face of singualtion wafer 80, to be provided with the structure of chip bonding bond layer 24, but also can be according to the method for the structure on the circuit surface that chip bonding bond layer 24 is sticked on singualtion wafer 80.At this moment, the chip bonding operation adopts the flip-chip mull technique that the circuit surface of circuit substrate and chip 13 is relative, and chip bonding bond layer 24 plays the effect of underfilling.
In addition; In above-mentioned the 4th execution mode; Adopt singualtion wafer 80 sides formerly to paste behind the chip bonding bond layer 24 again the method range upon range of with stationary fixture 3, but also can be with chip bonding bond layer 24 earlier with stationary fixture 3 range upon range of after again at the surperficial laminated wafer 80 of chip bonding bond layer 24.
The suction force that in arbitrary execution mode of the present invention, all only needs to utilize absorption chuck 70 just can pick-up chip 13, does not have the damage by the chip 13 that produces during the plunger tip sheet on the fine needle.In addition, even continuous pick-up chip 13, therefore skew, need not take place and not adjust the such operation of absorption affinity in the rear half stage of picking up in being close to state and also can not changing of the chip 13 that on stationary fixture 3, stays in order to prevent chip 13 positions.Therefore, even the chip of processing extremely thinly 13 also can be transferred to the chip bonding operation with the picking up of the chip 13 of bonding agent safely.

Claims (8)

1. manufacturing approach with the bonding agent chip; In being close to layer laminated and having under the state of chip bonding bond layer and wafer of stationary fixture, said wafer and said chip bonding bond layer are cut off forming chip fully, and be filled to pick device through said stationary fixture is changeed; The said layer of being close to of said stationary fixture is out of shape; Thereby said chip is picked up from said stationary fixture with said chip bonding bond layer, it is characterized in that
Said stationary fixture comprises:
The said layer of being close to; And
The anchor clamps base station has a plurality of thrusts and the peripheral part on this surface that the height sidewall roughly the same with the height of this thrust arranged on a surface of this anchor clamps base station,
The said layer of being close to is in the surperficial laminated that said thrust is arranged of said anchor clamps base station and bonding at the upper surface of said sidewall,
Be formed with on the surface that said thrust is arranged of said anchor clamps base station by said and be close to the division space that layer, said thrust and said sidewall constitute,
Said anchor clamps base station is provided with at least one and makes through hole outside and that said division space connects, and the air that can aspirate through the said through hole via said stationary fixture in the said division space makes the said layer distortion of being close to.
2. the manufacturing approach of band bonding agent chip as claimed in claim 1 is characterized in that,
Said being close on the layer at said stationary fixture forms the state according to the sequential cascade of said chip bonding bond layer and said wafer across releasing sheet.
3. the manufacturing approach of band bonding agent chip as claimed in claim 1 is characterized in that,
Said being close on the layer at said stationary fixture forms the state according to the sequential cascade of said wafer and said chip bonding bond layer across protection with the adhesion sheet material.
4. like the manufacturing approach of claim 1 or 3 described band bonding agent chips, it is characterized in that,
Be close to the state of sequential cascade that forms according to said wafer, said chip bonding bond layer on the layer and be used to protect the releasing sheet of said chip bonding bond layer said stationary fixture said.
5. manufacturing approach with the bonding agent chip; Under the state of being close to the wafer after layer laminated has chip bonding bond layer and singualtion of stationary fixture, said chip bonding bond layer is cut off according to the profile of chip fully, and be filled to pick device through said stationary fixture is changeed; The said layer of being close to of said stationary fixture is out of shape; Thereby said chip is picked up from said stationary fixture with said chip bonding bond layer, it is characterized in that
Said stationary fixture comprises:
The said layer of being close to; And
The anchor clamps base station has a plurality of thrusts and the peripheral part on this surface that the height sidewall roughly the same with the height of this thrust arranged on a surface of this anchor clamps base station,
The said layer of being close to is in the surperficial laminated that said thrust is arranged of said anchor clamps base station and bonding at the upper surface of said sidewall,
Be formed with on the surface that said thrust is arranged of said anchor clamps base station by said and be close to the division space that layer, said thrust and said sidewall constitute,
Said anchor clamps base station is provided with at least one and makes through hole outside and that said division space connects, and the air that can aspirate through the said through hole via said stationary fixture in the said division space makes the said layer distortion of being close to.
6. the manufacturing approach of band bonding agent chip as claimed in claim 5 is characterized in that,
Said being close on the layer at said stationary fixture forms the state according to the sequential cascade of the wafer after said chip bonding bond layer and the singualtion across releasing sheet.
7. the manufacturing approach of band bonding agent chip as claimed in claim 5 is characterized in that,
Said being close on the layer at said stationary fixture forms the state according to the sequential cascade of wafer after the singualtion and said chip bonding bond layer across protection with the adhesion sheet material.
8. like the manufacturing approach of claim 5 or 7 described band bonding agent chips, it is characterized in that,
Be close to the state of sequential cascade that forms according to the said wafer after the singualtion, said chip bonding bond layer on the layer and be used to protect the releasing sheet of said chip bonding bond layer said stationary fixture said.
CN2008800122285A 2007-04-17 2008-04-15 Method for manufacturing chip with adhesive Expired - Fee Related CN101657890B (en)

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