CN101634026A - Corrosive liquid for preparing monocrystal silicon textured surface and method thereof - Google Patents

Corrosive liquid for preparing monocrystal silicon textured surface and method thereof Download PDF

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Publication number
CN101634026A
CN101634026A CN200910091826A CN200910091826A CN101634026A CN 101634026 A CN101634026 A CN 101634026A CN 200910091826 A CN200910091826 A CN 200910091826A CN 200910091826 A CN200910091826 A CN 200910091826A CN 101634026 A CN101634026 A CN 101634026A
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China
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monocrystalline silicon
percent
corrosive fluid
preparing
corrosive liquid
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CN200910091826A
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许颖
勾宪芳
励旭东
宋爽
张燕鹏
谢芳吉
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BEIJING SOLAR ENERGY INST Co Ltd
Jiangsu Aide Solar Energy Technology Co Ltd
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BEIJING SOLAR ENERGY INST Co Ltd
Jiangsu Aide Solar Energy Technology Co Ltd
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Publication of CN101634026A publication Critical patent/CN101634026A/en
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Abstract

The invention relates to a corrosive liquid for preparing monocrystal silicon textured surfaces and a method thereof. The corrosive liquid comprises an alkali solution, sodium silicate and isopropanol, and is characterized by also comprising a perfluoro octoate aqueous solution, wherein the perfluoro octoate aqueous solution has the volume percent of 0.2-1 percent and the concentration within a range of 5*10<-5>-5*10<-3>mol/L; the alkali solution has the mass percent of 1-2.5 percent, the sodium silicate has the mass percent of 0.1-2 percent, and the isopropanol has the volume percent of 0.3-2 percent; and the alkali solution is sodium hydroxide or potassium hydroxide or sodium carbonate. The corrosive liquid has low cost, pyramids formed on the prepared monocrystal silicon textured surfaces have small and uniform sizes, and the corrosive liquid is favorable for solar energy absorption and can be widely applied to the field of solar batteries.

Description

A kind of corrosive fluid and method for preparing monocrystalline silicon suede
Technical field
The present invention relates to a kind of technical field of solar batteries, particularly about a kind of corrosive fluid and method for preparing monocrystalline silicon suede.
Background technology
Low-cost, high efficiency solar cell is the focus that people chase always, and the monocrystaline silicon solar cell surface-texturing is one of effective means that improves conversion efficiency of solar cell at present.Usually, textured method mainly is an alkaline etching, alkaline etching is to add various damping fluids in caustic corrosion liquid, wait controls reaction speed such as Virahol, ethanol, water glass, to obtain having the matte of micron dimension pyramid pattern, the size of pyramid pattern is more little, and is even more, the extinction ability of silicon single crystal is strong more, and the efficiency of conversion of solar cell is also just high more.At present, the main Virahol that uses is as damping fluid on the large solar battery production, and concentration adopts 5%~10% usually.But because the Virahol cost is higher, volatility is big, and consumption is big, and needs continuous make-up solution in process of production, thereby causes cost to raise.And the thickness that above-mentioned corrosive fluid makes silicon single crystal erode is bigger than normal, and thickness is crisp fritter more and more, and easy fracture also can make production cost further improve.
Summary of the invention
At the problems referred to above, the purpose of this invention is to provide a kind of cost is low, fine prepares texture of monocrystalline-silicon solar cell corrosive fluid and method.
For achieving the above object, the present invention takes following technical scheme: a kind of corrosive fluid for preparing monocrystalline silicon suede, it comprises alkaline solution, water glass and Virahol, it is characterized in that: it comprises that also volume percent is that 0.2%~1% concentration range is 5*10 -5~5*10 -3The Perfluorocaprylic Acid salt brine solution of mol/L.
The mass percent of described alkaline solution is 1%~2.5%, and the mass percent of described water glass is 0.1%~2%, and the volume percent of described Virahol is 0.3%~2%.
Described alkaline solution is sodium hydroxide or potassium hydroxide or yellow soda ash.
A kind of method of using above-mentioned corrosive fluid to prepare monocrystalline silicon suede is characterized in that: the P type of unwashed or thick throwing or n type single crystal silicon are put into described corrosive fluid carry out corrosion reaction, range of reaction temperature is 75~85 ℃, and the etching time scope is 5~18min.
It is the uniform matte of 0.5~8 μ m that described monocrystalline silicon surface after corrosion reaction forms the pyramid length of side.
The silicon single crystal thickness that is corroded is 5~15 μ m.
The present invention is owing to take above technical scheme, it has the following advantages: 1, the present invention is owing to added the Perfluorocaprylic Acid salts solution by alkaline solution, in water glass and the Virahol blended solution, perfluorooctanoic acid salt is as a kind of negatively charged ion neutral surface active agent, has very high thermodynamic stability, chemical stability and good consistency, and can be under extremely low strength of solution drop to the surface tension of the aqueous solution very low, strengthen effect of impregnation may, therefore in various pH value scopes, all kinds of water-baseds, stable in properties in the solvent-based system, need not the short period of time fluid infusion, therefore saved cost.2, because the Perfluorocaprylic Acid salt concn that the present invention adopts is extremely low, and its consumption is compared with other damping fluid, therefore consumption seldom further provides cost savings.3, in the corrosive fluid of the present invention owing to adopted the Perfluorocaprylic Acid salts solution as damping fluid, therefore only spent the reaction times of 5~18min, having obtained the pyramid length of side is the uniform matte of 0.5~8 μ m, more conventional texturing time 25~35min has substantial degradation, and has improved production efficiency widely.4, the thickness that erodes of the silicon single crystal prepared of the inventive method is 5~15 μ m, and the monocrystalline silicon surface that obtains is the uniform matte of 0.5~8 μ m for the pyramid length of side, therefore helps the absorption of sunlight, has obtained the fine monocrystalline silicon suede.The present invention has reduced production cost, and the texture of monocrystalline-silicon solar cell of preparing has improved the efficiency of conversion of solar cell greatly, and can be widely used in the manufacture of solar cells field.
Description of drawings
Fig. 1 is through amplifying 400 times monocrystalline silicon suede shape appearance figure under metaloscope
Fig. 2 is through amplifying 488 times monocrystalline silicon suede shape appearance figure under scanning electron microscope
Fig. 3 is through amplifying 977 times monocrystalline silicon suede shape appearance figure under scanning electron microscope
Embodiment
Below in conjunction with drawings and Examples the present invention is described in detail.
Corrosive fluid of the present invention comprises that mass percent is 1%~2.5% alkaline solution, and mass percent is 0.1%~2% water glass, and volume percent is that 0.3%~2% Virahol and volume percent are that 0.2%~1% concentration range is 5*10 -5~5*10 -3The Perfluorocaprylic Acid salt brine solution of mol/L.Above-mentioned alkaline solution can adopt sodium hydroxide or oxygen potassium hydride KH or yellow soda ash etc.
It is as follows to use corrosive fluid of the present invention to prepare the method for monocrystalline silicon suede:
At first, preparing corrosive fluid in 75~85 ℃ of thermostatic baths, is that 1%~2.5% alkaline solution and mass percent are that to add concentration in 0.1%~2% the water glass mixing solutions be 5*10 in volume percent -5~5*10 -3Mol/L Perfluorocaprylic Acid salts solution, the volume percent that makes the Perfluorocaprylic Acid salts solution is 0.2%~1%.Behind constant temperature, add 0.3%~2% Virahol, the P type of unwashed or thick throwing or n type single crystal silicon sheet are inserted in the gaily decorated basket, put into solution in the lump, take out behind 5~18min, directly rinse well with deionized water.Shown in Fig. 1~3, observing the pyramid length of side that forms on the monocrystalline silicon piece under microscope and scanning electron microscope is the uniform matte of 0.5~8 μ m, and the thickness that silicon single crystal erodes is 5~15 μ m.In the present embodiment, what monocrystalline silicon piece adopted is commercially available P type or N type,<100〉crystal orientation monocrystalline substrate, resistivity 0.5~7 Ω cm, thickness 180~500 μ m.
Below by several specific embodiments the present invention is further verified.
Embodiment 1:
Shown in Fig. 1~3, Fig. 1~3 are for the temperature of thermostatic bath is 75 ℃, and alkaline solution is 1.5 (% mass percent) sodium hydroxide, 0.12 (% mass percent) water glass, and 0.5 (% volume percent) Virahol, 0.5 (% volume percent) concentration is 5*10 -5~5*10 -3The Perfluorocaprylic Acid salt brine solution of mol/L, and when etching time is 18min, the silicon single crystal that obtains with pyramid matte, examine under a microscope on the surface of silicon single crystal and formed uniform pyramid matte (as shown in Figure 1), and the pyramidal length of side is 0.5~8 μ m (as Fig. 2, shown in Figure 3), and the thickness that is corroded on the silicon single crystal is 10 μ m.
Embodiment 2:
When the temperature of thermostatic bath is 85 ℃, alkaline solution is 1.5 (% quality) sodium hydroxide, 0.12 (% quality) water glass, and 0.5 (% volume) Virahol, 0.5 (% volume) concentration is 5*10 -5~5*10 -3The Perfluorocaprylic Acid salt brine solution of mol/L, and etching time is when being 7min, and the pyramidal length of side is 0.5~8 μ m on the monocrystalline silicon suede that obtains, and the thickness that is corroded on the silicon single crystal is 10 μ m.
The perfluorooctanoic acid salt that adopts among the present invention is a kind of negatively charged ion neutral surface active agent, it has very high thermodynamics and chemical stability, can stablely in special applications systems such as strong acid, highly basic, strong oxidizing medium bring into play its Action of Surfactant effectively, can not react with system or decompose; Perfluorooctanoic acid salt also has good consistency, can be widely used in various pH value scopes, all kinds of water-based, solvent-based system, and can be compatible well with other tensio-active agent and component in the system, even under extremely low strength of solution, perfluorooctanoic acid salt also can drop to the surface tension of the aqueous solution very low, strengthens wetting property.

Claims (6)

1, a kind of corrosive fluid for preparing monocrystalline silicon suede, it comprises alkaline solution, water glass and Virahol, it is characterized in that: it comprises that also volume percent is that 0.2%~1% concentration range is 5*10 -5~5*10 -3The Perfluorocaprylic Acid salt brine solution of mol/L.
2, a kind of corrosive fluid for preparing monocrystalline silicon suede as claimed in claim 1, it is characterized in that: the mass percent of described alkaline solution is 1%~2.5%, the mass percent of described water glass is 0.1%~2%, and the volume percent of described Virahol is 0.3%~2%.
3, a kind of corrosive fluid for preparing monocrystalline silicon suede as claimed in claim 1 is characterized in that: described alkaline solution is sodium hydroxide or potassium hydroxide or yellow soda ash.
4, a kind of method for preparing monocrystalline silicon suede as each described corrosive fluid in the claim 1~3 of using, it is characterized in that: the P type of unwashed or thick throwing or n type single crystal silicon are put into described corrosive fluid carry out corrosion reaction, range of reaction temperature is 75~85 ℃, and the etching time scope is 5~18min.
5, a kind of method for preparing monocrystalline silicon suede as claimed in claim 4 is characterized in that: it is the uniform matte of 0.5~8 μ m that the described monocrystalline silicon surface after corrosion reaction forms the pyramid length of side.
6, as claim 4 or 5 described a kind of methods that prepare monocrystalline silicon suede, it is characterized in that: the silicon single crystal thickness that is corroded is 5~15 μ m.
CN200910091826A 2009-08-26 2009-08-26 Corrosive liquid for preparing monocrystal silicon textured surface and method thereof Pending CN101634026A (en)

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Cited By (23)

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CN101818378A (en) * 2010-04-26 2010-09-01 江苏林洋新能源有限公司 Velvet manufacturing solution of monocrystalline silicon additive
CN102108557A (en) * 2011-01-27 2011-06-29 巨力新能源股份有限公司 Method for preparing monocrystalline silicon suede
CN102134754A (en) * 2011-03-14 2011-07-27 天威新能源(扬州)有限公司 Manufacturing method of submicron suede of monocrystalline silicon slice with crystal orientation being [100]
CN102140697A (en) * 2010-12-28 2011-08-03 中国科学院微电子研究所 Method for preparing porous pyramid structure on monocrystalline silicon substrate
CN102154712A (en) * 2011-03-10 2011-08-17 宁波尤利卡太阳能科技发展有限公司 Monocrystal silicon solar battery texture etching liquid and preparation method thereof
CN102220645A (en) * 2011-04-30 2011-10-19 常州天合光能有限公司 Method for texturing silicon wafer cut by diamond wire
CN102230228A (en) * 2011-06-28 2011-11-02 常州大学 Wool making agent used for surface treatment on single crystalline silicon solar cell and application method thereof
EP2458622A2 (en) 2010-11-24 2012-05-30 Air Products and Chemicals, Inc. Compositions and methods for texturing of silicon wafers
CN103253868A (en) * 2012-02-17 2013-08-21 江西沃格光电科技有限公司 Liquid crystal display screen thinning pretreatment liquid and liquid crystal display screen thinning method
US9305792B2 (en) 2010-08-12 2016-04-05 Dongwoo Fine-Chem Co., Ltd. Texture-etchant composition for crystalline silicon wafer and method for texture-etching (1)
CN105679862A (en) * 2010-12-21 2016-06-15 西奥尼克斯公司 Semiconductor devices having reduced substrate damage and associated methods
CN106521636A (en) * 2016-12-30 2017-03-22 德清丽晶能源科技有限公司 Single crystal wafer texturing additive
CN106601835A (en) * 2015-10-15 2017-04-26 福建金石能源有限公司 Control method for controlling suede dimension of monocrystalline silicon heterojunction solar battery cell
CN106835288A (en) * 2016-12-30 2017-06-13 德清丽晶能源科技有限公司 A kind of etching method of monocrystalline silicon piece
US10229951B2 (en) 2010-04-21 2019-03-12 Sionyx, Llc Photosensitive imaging devices and associated methods
US10244188B2 (en) 2011-07-13 2019-03-26 Sionyx, Llc Biometric imaging devices and associated methods
US10269861B2 (en) 2011-06-09 2019-04-23 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
US10347682B2 (en) 2013-06-29 2019-07-09 Sionyx, Llc Shallow trench textured regions and associated methods
US10361232B2 (en) 2009-09-17 2019-07-23 Sionyx, Llc Photosensitive imaging devices and associated methods
US10361083B2 (en) 2004-09-24 2019-07-23 President And Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
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CN110541169A (en) * 2018-06-29 2019-12-06 蓝思科技股份有限公司 deplating liquid and deplating method for removing coating on surface of workpiece
US10505054B2 (en) 2010-06-18 2019-12-10 Sionyx, Llc High speed photosensitive devices and associated methods

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US10374109B2 (en) 2001-05-25 2019-08-06 President And Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US10741399B2 (en) 2004-09-24 2020-08-11 President And Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US10361083B2 (en) 2004-09-24 2019-07-23 President And Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US10361232B2 (en) 2009-09-17 2019-07-23 Sionyx, Llc Photosensitive imaging devices and associated methods
US10229951B2 (en) 2010-04-21 2019-03-12 Sionyx, Llc Photosensitive imaging devices and associated methods
CN101818378A (en) * 2010-04-26 2010-09-01 江苏林洋新能源有限公司 Velvet manufacturing solution of monocrystalline silicon additive
CN101818378B (en) * 2010-04-26 2011-11-09 韩华新能源(启东)有限公司 Velvet manufacturing solution of monocrystalline silicon additive
US10505054B2 (en) 2010-06-18 2019-12-10 Sionyx, Llc High speed photosensitive devices and associated methods
US9305792B2 (en) 2010-08-12 2016-04-05 Dongwoo Fine-Chem Co., Ltd. Texture-etchant composition for crystalline silicon wafer and method for texture-etching (1)
TWI573859B (en) * 2010-08-12 2017-03-11 東友精細化工有限公司 Texture etching solution composition and texture etching method of crystalline silicon wafers (1)
EP2458622A2 (en) 2010-11-24 2012-05-30 Air Products and Chemicals, Inc. Compositions and methods for texturing of silicon wafers
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CN102108557B (en) * 2011-01-27 2013-02-13 巨力新能源股份有限公司 Method for preparing monocrystalline silicon suede
CN102108557A (en) * 2011-01-27 2011-06-29 巨力新能源股份有限公司 Method for preparing monocrystalline silicon suede
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