CN101570311A - Heat-insulated microbridge structure with high duty ratio and realization method thereof - Google Patents
Heat-insulated microbridge structure with high duty ratio and realization method thereof Download PDFInfo
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- CN101570311A CN101570311A CNA200910052996XA CN200910052996A CN101570311A CN 101570311 A CN101570311 A CN 101570311A CN A200910052996X A CNA200910052996X A CN A200910052996XA CN 200910052996 A CN200910052996 A CN 200910052996A CN 101570311 A CN101570311 A CN 101570311A
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Abstract
The invention discloses a heat-insulated microbridge structure with high duty ratio and a realization method thereof. The microbridge structure functionally separates a bridge surface from bridge legs, wherein the bridge surface has an absorption structure; the bridge legs have a supporting structure, a conductive structure and a heat-insulated structure; overlaid contact parts of the bridge legs and the bridge surface are sensitive structures; and the bridge legs are arranged on the lower part of the bridge surface, and the duty ratio of devices is improved on the premise of not improving the thermal mass of the bridge surface. The invention also provides the simple, convenient and effective realization method, which can prepare large-scale microbridge arrays.
Description
Technical field
The present invention relates to detector Micrometer-Nanometer Processing Technology field, specifically refer to Infrared Detectors cellular construction and its implementation of a kind of high duty ratio, it is applicable to the non-refrigeration focal surface device, also is applicable to the device that other needs the high duty ratio film micro-bridge structure.
Background technology
Non-refrigeration focal surface is a kind of " heat " detector in essence, utilizes " thermal effect of radiation " of responsive unit to carry out infrared acquisition, and its core is the infrared-sensitive element array with certain heat history ability and thermal sensitive effect.
Under the certain situation of cellar area, the area of responsive first bridge floor is big more, and also, dutycycle is high more, and the radiation that responsive unit receives is also many more.In order to improve dutycycle, generally adopt double-decker, on the CMOS reading circuit, utilize surface treatment to prepare responsive first bridge floor, its shortcoming is bridge leg and bridge floor on same plane, the area constraints of bridge leg dutycycle.Paper [[1] Jerominek H, Pope T D, Alain C. " Miniature VO2-based bolometric detectors for high-resolution uncooled FPAs. " Proc.SPIE4028,47-57,2000, [2] Lee H K, Yoon E S. " A high fill-factor bolometerusing micromachined multilevel electrothermal structures. " IEEE Trans on ED, 46,1489-1491,1999] three-decker of Ti Chuing is hidden in the bridge floor below with leg, has further improved dutycycle, and its shortcoming is that manufacturing process is very complicated, the membrane stress equilibrium problem is outstanding, interconnect failure rate height.
Summary of the invention
The present invention proposes a kind of three-decker, bridge floor is separated from function with the bridge leg, bridge floor is an absorbing structure, the bridge leg is supporting construction, conductive structure and heat insulating construction, and the overlapping contact portion of bridge leg and bridge floor is a sensitive structure, and the bridge leg is placed the bridge floor below, under the prerequisite that does not improve the bridge floor thermal mass, improve the dutycycle of device, and provide a kind of effective and easy implementation method, can prepare extensive microbridge array.
Structure of the present invention is described below: this structure comprises five essential parts altogether, is respectively absorbed layer bridge floor, function sensitive district, bridge leg, interconnect posts and reading circuit substrate.These five parts are three layers of structure with down suction, topmost one deck comprises two sublayers that are sticked together, the sublayer bridge floor of upper space is an absorbed layer, work to absorb radiation, sublayer under the absorbed layer is the function sensitive district, function sensitive district area is not more than the absorbed layer bridge floor, comprises the function sensitive floor in the function sensitive district, plays sensitization; The second layer is the bridge leg, below bridge floor, wherein comprises electrode, rises and supports and electric action; The 3rd layer is the reading circuit substrate.The bridge leg of the second layer links to each other with the function sensitive district of ground floor, and supports ground floor by the part that the bridge leg tilts, the conducting that links to each other with the function sensitive layer of the electrode in the bridge leg.The 3rd layer reading circuit supports the bridge leg of the second layer by interconnect posts, and the interconnect posts conducting that links to each other with electrode in the bridge leg is introduced into reading circuit with the detectable signal of function sensitive layer.
Wherein shape, material and the size of the bridge floor absorbed layer of ground floor are unfixing, can be single layer structure or multi-layer compound film structure, determine as required.Function sensitive layer shape is unfixing, and area is unfixing, but is not more than absorbed layer, determines as required.Sensitive material is unfixing, determines as required.
Wherein shape, size, material and the quantity of the bridge leg of the second layer are unfixing, determine as required.
Function sensitive layer and bridge leg can adopt self supporting structure, also can adopt the support film structure.For self supporting structure, sensitive layer and bridge leg are commaterial, for example unformed silicon.For supporting membrane structure, sensitive layer is the sandwich structure of dielectric layer/sensitive material layer/dielectric layer, and the bridge leg is the sandwich structure of dielectric layer/conductive metal layer/dielectric layer, the conductive metal layer conducting that links to each other with the sensitive material layer.
The vertical interval of the ground floor and the second layer is fixing, determines according to concrete application, and the vertical interval of the second layer and the 3rd layer is fixing, determines according to concrete application.
At first, the bridge leg of this structure is below bridge floor, and the bridge leg does not influence the dutycycle of bridge floor.Secondly bridge floor separates with the function of bridge leg, and the intensity that intercouples is little.Bridge floor be absorbed layer and bridge leg not at grade, determine the dutycycle of device separately, sensitive function district area is less, so bridge floor has determined thermal capacitance C substantially.The bridge leg rise support and the design of electric action and bridge floor relatively independent, freely select material and size as required, determine thermal conductance G separately.The thermal response time of device, τ=C/G, the free degree of design enlarges greatly.Once more, the ground floor of this structure comprises larger area absorbed layer bridge floor and than the function sensitive district of small size, compare with the multi-layer compound structure that the absorbed layer of general double-decker and the bridge floor in [1] [2] and sensitive layer are overlapping, thermal capacitance C is less relatively, the thermal response time τ of device is less, and response device is faster.Therefore, this structure is fit to the undersized large scale array of high density.
Structure implementation method of the present invention is described below: one deck sacrifice layer of growing earlier on the substrate of microbridge array, prepare the absorbed layer bridge floor thereon, the second layer sacrifice layer of growing then, perforate to absorbed layer bridge floor surface forms the functional areas cavity on second layer sacrifice layer, deposition film prepares function sensitive district and bridge leg, wherein the function sensitive district is in the cavity of functional areas, the bridge leg is on second layer sacrifice layer, then with reversing of microbridge substrate and reading circuit substrate interconnection, remove all sacrifice layers at last, the microbridge substrate breaks away from the absorbed layer bridge floor, and absorbed layer bridge floor and bridge leg also break away from mutually.
Its implementation specifically comprises the steps:
(1) growth regulation one deck sacrifice layer on the microbridge substrate, the figure of deposition film, and formation thereon, preparation absorbed layer bridge floor.
(2) growth second layer sacrifice layer, perforate is to the absorbed layer surface on this sacrifice layer, and deposition film prepares sensitizing range and microbridge leg.Opening area is the contact area of bridge leg and bridge floor, makes the sensitizing range at this regional deposit sensitive material, and the microbridge leg is deposited on the second layer sacrifice layer.This step process is identical with general two-layer process, but the sensitizing range in the hole that second layer sacrifice layer is left, and the bridge leg is on second layer sacrifice layer.
(3) with the reversing of microbridge substrate, with the reading circuit substrate interconnection.
(4) remove all sacrifice layers, make the microbridge substrate break away from the absorbed layer bridge floor, the absorbed layer bridge floor breaks away from the bridge leg.
Can adopt silicon chip and bonding glass etc. for the substrate in the step (1), sacrifice layer can adopt film or low thermal oxidation silicon thin films such as polyimides.
Can adopt film or low-temperature oxidation silicon thin films such as polyimides for sacrifice layer in the step (2), its thickness is looked specific embodiment and is determined.Contact area area and shape are unfixing.
For the flip-chip interconnection in the step (3), interconnect posts adopts the indium post, the shape of interconnect posts, does not highly have particular restriction, is determined by concrete technology.
For the method for removing sacrifice layer in the step (4) can be wet method or dry method, fixed according to the sacrificial layer material that adopts.
The invention has the advantages that:
(1) this method adopts the last double-layer structure of realizing microbridge with the technology of general double deck, adopt film shifting process to pass through the indium post then and will go up the double-layer structure frame on the reading circuit substrate, realized the three-decker of high duty ratio, avoided in the three-decker that [1] [2] mention, the integrity problem that repeatedly interconnects between the membrane structure helps improving yield rate.
(2) this method will have ripe two-layer process and film shifting process combination now, need not existing technology is adjusted in a large number, be applicable to all kinds of large-scale hybrid-type non-refrigeration focal surfaces and similar device, help large-scale production.
Description of drawings
Fig. 1 microbridge agent structure schematic diagram, wherein Fig. 1 (a) is the complete structure schematic diagram, Fig. 1 (b) is for removing the schematic diagram behind the absorbed layer bridge floor (1) among Fig. 1 (a);
Mark is described as follows in the schematic diagram: 1---the absorbed layer bridge floor; 2---the function sensitive district; 3--bridge leg; 4---interconnect posts; 5---the reading circuit substrate;
Fig. 2 implementation procedure schematic diagram, wherein: Fig. 2 (a), go up deposit PECVD silicon nitride film as adhesion promoting layer (7) at microbridge substrate (6); Fig. 2 (b) goes up spin-on polyimide as sacrifice layer one (8) at adhesion promoting layer (7); Fig. 2 (c), at sacrifice layer one (8) deposit titanium nitride as absorbed layer one (9); Fig. 2 (d) goes up deposit silicon nitride at absorbed layer one (9), as absorbed layer two (10); Fig. 2 (e) etches figure on absorbed layer one (9) and absorbed layer two (10), form absorbed layer bridge floor (1); Fig. 2 (f) goes up spin-on polyimide at absorbed layer bridge floor (1), as sacrifice layer two (11); Fig. 2 (g) goes up formation functional areas cavitys (12) at sacrifice layer two (11); Fig. 2 (h), deposit silicon nitride is as upper support layer (13); Fig. 2 (i) goes up the deposit vanadium oxide as function sensitive layer (14) at upper support layer (13), and goes up function sensitive layer (14) graphical at functional areas cavity (12); Fig. 2 (j), preparation electrode (15); Fig. 2 (k), deposit silicon nitride is as lower support layer (16); Fig. 2 (l), etching upper support floor (13) and lower support floor (16) form function sensitive district (2) and bridge leg (3), go up etching lower support layer (16) to electrode (15) at bridge leg (3), form microbridge lead wire outlet (17); Fig. 2 (m) goes up formation chromium gold laminated film figure in microbridge lead wire outlet (17), as interconnection adhesion layer one (18); Fig. 2 (n) goes up formation indium post at interconnection adhesion layer one (18), as interconnect posts one (19); Fig. 2 (o), preparation interconnection adhesion layer two (22) and interconnect posts two (21) on the lead wire outlet of reading circuit substrate (5); Fig. 2 (p), microbridge substrate (6) and reading circuit substrate (5) interconnection; Fig. 2 (q) draws release groove (23) from the microbridge array substrate back side; Fig. 2 (r), the structure after the release.
Mark is described as follows in the schematic diagram: 6---the microbridge substrate; 7---adhesion promoting layer; 8---sacrifice layer one; 9---absorbed layer one; 10---absorbed layer two; 11---sacrifice layer two; 12---the functional areas cavity; 13---the upper support layer; 14---the function sensitive layer; 15---electrode; 16---the lower support layer; 17---the microbridge lead wire outlet; 18---connect adhesion layer one; 19--interconnect posts one; 20---the reading circuit electrode; 21---interconnect posts two; 22---interconnection adhesion layer two; 23---release groove.
The specific embodiment
Present embodiment is microbridge substrate (6) with the silicon chip, and polyimides is a sacrifice layer, and vanadium oxide is a sensitive material, adopts the indium pole interconnection.
Below for utilizing the concrete steps of film transfer of the present invention:
1) shown in Fig. 2 (a), go up deposit PECVD silicon nitride film as adhesion promoting layer (7) at microbridge substrate (6), strengthen adhesiveness with polyimides.
Shown in Fig. 2 (b), go up spin-on polyimide at adhesion promoting layer (7), thickness is 20 μ m, imidization (400 ℃, 1 hour, nitrogen protection), as sacrifice layer one (8).
Shown in Fig. 2 (c), at sacrifice layer one (8) sputter titanium nitride, thickness is 20nm, as absorbed layer one (9).
Shown in Fig. 2 (d), go up deposit silicon nitride at absorbed layer one (9), thickness 250nm, as absorbed layer two (10), absorbed layer one (9) and absorbed layer two (10) laminated films are absorbed layer.
Shown in Fig. 2 (e), on absorbed layer one (9) and absorbed layer two (10), etch figure, form absorbed layer bridge floor (1).
2) shown in Fig. 2 (f), spin-on polyimide, thickness 1.5 μ m, imidization (400 ℃, 1 hour, nitrogen protection), as sacrifice layer two (11).
Shown in Fig. 2 (g), the employing silicon nitride is a mask, adopts the oxygen plasma etch perforate to absorbed layer, removes silicon nitride mask then, forms functional areas cavitys (12).
Shown in Fig. 2 (h), deposit silicon nitride, thickness is 250nm, as upper support layer (13).
Shown in Fig. 2 (i), go up the deposit vanadium oxide as function sensitive layer (14) at upper support layer (13), and go up function sensitive layer (14) graphical at functional areas cavity (12).
Shown in Fig. 2 (j), adopt stripping technology to prepare electrode (15).
Shown in Fig. 2 (k), the deposit deposit silicon nitride, thickness is 250nm, as lower support layer (16).
Shown in Fig. 2 (l), etching upper support floor (13) and lower support floor (16) form function sensitive district (2) and bridge leg (3), go up etching lower support layer (16) to electrode (15) at bridge leg (3), form microbridge lead wire outlet (17).
3) shown in Fig. 2 (m), adopt stripping technology, on lead wire outlet, form chromium gold laminated film figure, chromium gold thickness is respectively 20nm and 100nm, as interconnection adhesion layer one (18).
Shown in Fig. 2 (n), adopt stripping technology on lead wire outlet, to form the indium post, as interconnect posts one (19), the height of interconnect posts is 10 microns.
Shown in Fig. 2 (o), preparation interconnection adhesion layer two (22) and interconnect posts two (21) on the lead wire outlet of reading circuit substrate (5).
Shown in Fig. 2 (p), microbridge substrate (6) upset and reading circuit substrate (5) are aimed at interconnection.Interconnect posts one (19) and interconnect posts two (21) connect into interconnect posts (4).
4) shown in Fig. 2 (q), adopt scribing machine, draw the middle part of release groove (23) from the microbridge array substrate back side, increase the response area of sacrifice layer to sacrifice layer one, shorten the diffusion path length of oxygen plasma to reaction-ure surface, the width of release groove (23) is 80 μ m.
Adopt oxygen plasma with sacrifice layer one and sacrifice layer two ashing simultaneously (segmentation etching, control underlayer temperature), microbridge substrate (6) is separated with absorbed layer bridge floor (1), absorbed layer bridge floor (1) also separates with bridge leg (2) simultaneously.Structure after the release is shown in Fig. 2 (r).
Claims (2)
1. the heat-insulated microbridge structure with high duty ratio of an Infrared Detectors, comprise absorbed layer bridge floor (1), function sensitive district (2), bridge leg (3), interconnect posts (4) and (5) five essential parts of reading circuit substrate, it is characterized in that: topmost one deck comprises two sublayers that are sticked together, the sublayer bridge floor of upper space is absorbed layer bridge floor (1), sublayer under the absorbed layer bridge floor (1) is function sensitive district (2), function sensitive district (2) area is not more than absorbed layer bridge floor (1), comprises function sensitive floor (14) in function sensitive district (2); The second layer is bridge leg (3), and bridge leg (3) wherein comprises electrode (15) in the below of absorbed layer bridge floor (1); The 3rd layer is reading circuit substrate (5).The bridge leg (3) of the second layer links to each other with the function sensitive district (2) of ground floor, and the part that tilts by the bridge leg supports absorbed layer bridge floor (1) and function sensitive district (2) of ground floor, the conducting that links to each other with function sensitive layer (14) of the electrode (15) in the bridge leg (3).The 3rd layer reading circuit substrate (5) supports the bridge leg (3) of the second layer by interconnect posts (4), and interconnect posts (4) conducting that links to each other with electrode (15) in the bridge leg (3) is introduced into reading circuit with the detectable signal of function sensitive layer (14).
2. the implementation method of the heat-insulated microbridge structure with high duty ratio of the described Infrared Detectors of claim 1, it is characterized in that: it may further comprise the steps:
1) goes up deposit PECVD silicon nitride film as adhesion promoting layer (7) at microbridge substrate (6), strengthen adhesiveness with polyimides; Go up spin-on polyimide at adhesion promoting layer (7), thickness is 20 μ m, and Kapton imidization 1 hour under the environment of 400 ℃ of temperature and nitrogen protection is as sacrifice layer one (8); At described sacrifice layer one (8) sputter titanium nitride, thickness is 20nm, as absorbed layer one (9); Go up deposit silicon nitride at described absorbed layer one (9), thickness 250nm, as absorbed layer two (10), absorbed layer one (9) and absorbed layer two (10) laminated films are absorbed layer; On absorbed layer one (9) and absorbed layer two (10), etch figure, form absorbed layer bridge floor (1);
2) go up spin-on polyimide at described absorbed layer two (10), thickness 1.5 μ m, Kapton imidization 1 hour under the environment of 400 ℃ of temperature and nitrogen protection is as sacrifice layer two (11); The employing silicon nitride is a mask, adopts the oxygen plasma etch perforate to absorbed layer bridge floor (1), removes silicon nitride mask then, forms functional areas cavitys (12); Deposit silicon nitride, thickness are 250nm, as upper support layer (13); Go up the sputter vanadium oxide as function sensitive layer (14) at upper support layer (13), and go up the function sensitive layer patternization at functional areas cavity (12); Adopt stripping technology to prepare electrode (15); Deposit silicon nitride coated electrode (15), silicon nitride thickness are 250nm, as lower support layer (16); Etching upper support floor (13) and lower support floor (16) form function sensitive district (2) and bridge leg (3), go up etching lower support layer (16) to electrode (15) at bridge leg (3), form microbridge lead wire outlet (17);
3) adopt stripping technology, go up in microbridge lead wire outlet (17) and form chromium gold laminated film figure, chromium gold thickness is respectively 20nm and 100nm, as interconnection adhesion layer one (18); Adopt stripping technology to go up at interconnection adhesion layer one (17) and form the indium post, as interconnect posts one (19), the height of interconnect posts is 10 microns; Go up preparation interconnection adhesion layer two (22) and interconnect posts two (21) at reading circuit electrode (20), then microbridge substrate (6) upset is aimed at interconnection with reading circuit substrate (5), interconnect posts one (19) and interconnect posts two (21) are connected to form interconnect posts (4).
4) adopt scribing machine, draw the middle part of release groove (23) to sacrifice layer one (8) from microbridge substrate (6) back side, the width of groove is 80 μ m.Adopt oxygen plasma with sacrifice layer one (8) and sacrifice layer two (11) ashing simultaneously (segmentation etching, control underlayer temperature), microbridge substrate (6) is separated with absorbed layer bridge floor (1), absorbed layer bridge floor (1) also separates with bridge leg (3).
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| CN105712284A (en) * | 2014-12-02 | 2016-06-29 | 无锡华润上华半导体有限公司 | Fabrication method of MEMS (Micro Electro Mechanical Systems) double layer suspended micro structure and MEMS infrared detector |
| CN105712284B (en) * | 2014-12-02 | 2017-09-29 | 无锡华润上华半导体有限公司 | The preparation method and MEMS infrared detectors of MEMS Double-layered suspended micro-structurals |
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| CN109596225A (en) * | 2018-12-20 | 2019-04-09 | 西安工业大学 | A kind of infrared detector and preparation method thereof with high-effect resonant cavity |
| CN111847375A (en) * | 2020-07-02 | 2020-10-30 | 上海集成电路研发中心有限公司 | Infrared detector structure and manufacturing method thereof |
| CN111847375B (en) * | 2020-07-02 | 2024-03-15 | 上海集成电路研发中心有限公司 | Infrared detector structure and manufacturing method thereof |
| CN113720469A (en) * | 2021-03-26 | 2021-11-30 | 北京北方高业科技有限公司 | Infrared detector pixel and infrared detector based on CMOS (complementary metal oxide semiconductor) process |
| CN113720483A (en) * | 2021-03-26 | 2021-11-30 | 北京北方高业科技有限公司 | Infrared detector pixel and infrared detector based on CMOS (complementary metal oxide semiconductor) process |
| CN114088201A (en) * | 2021-03-26 | 2022-02-25 | 北京北方高业科技有限公司 | Infrared detector pixel and infrared detector based on CMOS (complementary metal oxide semiconductor) process |
| CN114088208A (en) * | 2021-03-26 | 2022-02-25 | 北京北方高业科技有限公司 | Infrared detector based on CMOS (complementary Metal oxide semiconductor) process and preparation method thereof |
| CN114088209A (en) * | 2021-03-26 | 2022-02-25 | 北京北方高业科技有限公司 | Infrared detector based on CMOS (complementary Metal oxide semiconductor) process |
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