CN101546732B - Thin film transistor manufacturing method and display having the same - Google Patents
Thin film transistor manufacturing method and display having the same Download PDFInfo
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- CN101546732B CN101546732B CN 200810096612 CN200810096612A CN101546732B CN 101546732 B CN101546732 B CN 101546732B CN 200810096612 CN200810096612 CN 200810096612 CN 200810096612 A CN200810096612 A CN 200810096612A CN 101546732 B CN101546732 B CN 101546732B
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- 238000000034 method Methods 0.000 claims abstract description 70
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 47
- 238000005499 laser crystallization Methods 0.000 claims abstract description 26
- 230000002093 peripheral effect Effects 0.000 claims abstract description 26
- 229920005591 polysilicon Polymers 0.000 claims description 46
- 238000002425 crystallisation Methods 0.000 claims description 39
- 230000008025 crystallization Effects 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 23
- 230000004888 barrier function Effects 0.000 claims description 20
- 238000004020 luminiscence type Methods 0.000 claims description 16
- 239000011248 coating agent Substances 0.000 claims description 15
- 238000000576 coating method Methods 0.000 claims description 15
- 239000010408 film Substances 0.000 claims description 11
- 238000005224 laser annealing Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 44
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- 229910052710 silicon Inorganic materials 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1251—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1229—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with different crystal properties within a device or between different devices
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Abstract
An organic light emitting diode (OLED) display and thin film transistor (TFT) manufacturing method thereof are disclosed. According to the present invention, poly-silicon layers for forming active areas of non-driving TFT (e.g. peripheral circuit TFT and switch TFT) and driving TFT used in the OLED display are respectively made by using standard laser crystallization method and non-laser crystallization method or low energy laser crystallization method. Therefore, the peripheral circuit TFT has excellent electrical performance such as high carrier mobility, while the OLED-driving TFT has good stability so that the resultant display can operate with improved luminance uniformity.
Description
Technical field
The present invention is about active array Organic Light Emitting Diode (Active Matrix Organic LightEmitting Diode; AMOLED) display, clearer and more definite, be about making the employed different thin-film transistors of this AMOLED display (Thin Film Transistor; TFT) method, and the active array organic light emitting diode display that comprises these thin-film transistors.
Background technology
Organic Light Emitting Diode (OLED) extensively applies to display, is that wherein luminous component is to utilize drive circuit to drive luminescence component in active array Organic Light Emitting Diode (AMOLED) display---Organic Light Emitting Diode (OLED).The AMOLED drive circuit is to use thin-film transistor, comprise a switching thin-film transistor (Switch Thin Film Transistor) and drive thin-film transistor (DrivingThin Film Transistor) with one, wherein this switching thin-film transistor is to implement with N-type thin-film transistor (NTFT), the on off state that is used for the inferior pixel (sub-pixel) of switching display, and the driving thin-film transistor is to implement with P type thin-film transistor (PTFT), is used for driving luminescence component (as OLED).In addition, the peripheral circuit of AMOLED display part also needs to use N-type thin-film transistor (NTFT) and P type thin-film transistor (PTFT).In the prior art, the employed polysilicon of making in AMOLED drive circuit and the peripheral circuit of thin-film transistor all is to make long recrystallized amorphous silicon on glass substrate change into polysilicon with standard laser crystallization method.Why adopt standard laser crystallization method, be because the glass substrate that flat-panel screens is suitable for to make the suitable Silicon Wafer of transistor so high temperature resistant unlike general, must adopt temperature to be lower than the crystallization technology of glass substrate temperature.But standard laser crystallization technology can have the phenomenon of non-uniform light (Mura) because of the display that problems such as output laser energy difference cause making at last in triggering crystallisation procedure does.
In addition, it is with the output current driving OLED that AMOLED drives thin-film transistor, and the luminous result of OLED assembly is highstrung for the difference of drive current.The viewing area is the driving film transistor matrix with several times pixel (sub-pixel), if the electrology characteristic between each driving thin-film transistor has difference in a way, the luminous intensity of OLED assembly just produces corresponding difference in then should the zone, and then causes perceptible difference on the human vision.
After making display, be relevant to the phenomenon (Stripe Mura) that factors such as the standard laser technology that drives thin-film transistor and current drives can cause the striated non-uniform light, cause the yield of AMOLED product on the low side.The present invention namely is intended to head it off.
Summary of the invention
Switching thin-film transistor and driving thin-film transistor that the method for fabricating thin film transistor that the purpose of this invention is to provide a kind of OLED display uses with the drive circuit of the N-type of making OLED display periphery circuit part and P type peripheral circuit thin-film transistor and viewing area part.Peripheral circuit thin-film transistor by method manufacturing of the present invention and switching thin-film transistor and drive thin-film transistor and have the characteristic that meets its user demand respectively.Peripheral circuit thin-film transistor and switching thin-film transistor have excellent electric property, for example high carrier mobility.Drive thin-film transistor and then have good stable, make the display that makes at last have good uniformity of luminance.
Another object of the present invention provides a kind of OLED display, and it comprises peripheral circuit part and viewing area part.Peripheral circuit partly has the peripheral circuit thin-film transistor.The viewing area part has several times pixel, and each time pixel comprises luminescence component and is used for driving the driving thin-film transistor of luminescence component and the switching thin-film transistor that is used for switching time pixel status.Its peripheral circuit thin-film transistor of OLED display of the present invention and switching thin-film transistor and driving thin-film transistor have the characteristic that meets user demand respectively.Peripheral circuit thin-film transistor and switching thin-film transistor have excellent electric property, for example high carrier mobility.Drive thin-film transistor and then have good stable, make the display that makes at last have good uniformity of luminance.
According to the present invention, the method for fabricating thin film transistor of a kind of Organic Light Emitting Diode (OLED) display, comprising step provides a substrate layer, and this substrate layer has first area and second area; On this substrate layer, form a resilient coating; On this resilient coating, form first polysilicon layer by the first crystallization processing procedure; Graphical this first polysilicon layer is to form the transistorized active area of the first film in the first area; Form first separator; Form second polysilicon layer by the second crystallization processing procedure on this first separator, this second crystallization processing procedure is different from this first crystallization processing procedure; Graphical this second polysilicon layer is to form the active area of second thin-film transistor in second area; Form second separator; And the grid that on this second separator, forms the first film transistor and second thin-film transistor respectively.
OLED display according to the present invention has peripheral circuit portion and divides and the viewing area part.The viewing area part has several times pixel, the driving thin-film transistor that each time pixel comprises luminescence component and is used for driving luminescence component, and comprise switching thin-film transistor.This OLED display comprises a substrate layer; One the first film transistor is formed on this substrate layer, it comprises one first resilient coating and is formed on this substrate layer, the active area that one first polysilicon layer forms is arranged on this resilient coating, and a first grid insulating barrier is covered on the active area and a first grid is arranged on this first grid insulating barrier; And one second thin-film transistor be formed on this substrate layer, it comprises one second resilient coating and is formed on this substrate layer, the active area that one second polysilicon layer forms is arranged on this resilient coating, and a second grid insulating barrier is covered on the active area and a second grid is arranged at this second grid insulating barrier.This first polysilicon layer has different grain properties with this second polysilicon layer, and this first grid insulating barrier has different thickness with this second grid insulating barrier.
Description of drawings
Fig. 1 shows the basic circuit structure schematic diagram of active array Organic Light Emitting Diode (AMOLED) display 110;
Fig. 2 shows the basic circuit structure schematic diagram of the inferior pixel among Fig. 1;
Fig. 3 to Figure 12 shows the generalized section according to OLED display TFT manufacture method process step of the present invention respectively;
Figure 13 shows the polysilicon grain structure that forms by FE-RTA crystallization method; And
Figure 14 shows the polysilicon grain structure that ELA crystallization method forms; And
Figure 15 shows the schematic diagram that comprises according to the electronic installation of OLED display of the present invention.
Embodiment
Hereinafter with reference to the graphic detailed description of institute technology contents of the present invention.
Fig. 1 shows the basic circuit structure of active array Organic Light Emitting Diode (AMOLED) display 110.This OLED display 110 includes control circuit 140, data line drive circuit 160, scan line drive circuit 180 and a display floater 200.This display floater 200 has several times pixel 210, and each pixel 210 is connected with a data wire (D1 to Dn) 165 and a scan line (S1 to Sn) 187, thereby constitutes a matrix.Inferior pixel 210 receives the image data signal of data line drive circuit 160 and the switch/address signal of scan line drive circuit 180 via data wire 165 and scan line 187.This data line drive circuit 160 and this scan line drive circuit 180 are controlled by control circuit 140.
The circuit design of inferior pixel can comprise a plurality of thin-film transistors, drives thin-film transistor for driving the state that luminescence component and a switching thin-film transistor are used for switching this time pixel, as shown in Figure 2 but generally speaking have one at least.Fig. 2 shows the basic circuit structure schematic diagram of the inferior pixel 210 among Fig. 1.Each time pixel 210 comprises a luminescence component 212, and as OLED, and in order to drive the driving thin-film transistor 214 of this luminescence component 212, it generally is to be implemented by PTFT.This time pixel 210 and to comprise generally be switching thin-film transistor 216 and a capacitor 218 of being implemented by NTFT.The grid electricity of this switching thin-film transistor 216 is connected to corresponding scanning line 187, and it drains then that electricity is connected to corresponding data line 165, and its source electrode then is connected with an end of this capacitor 218 and the grid of the thin transistor 214 of drive membrane.The other end of this capacitor 218 is connected with the source electrode of this driving thin-film transistor 214 and is connected to voltage source V dd.This drives thin-film transistor 214 and is connected with this luminescence component 212.This circuit structure be operating as the general person of knowing in this skill, yet non-emphasis of the present invention simultaneously is not so repeat them here.
As previously mentioned, for avoiding viewing area non-uniform light phenomenon, quite strict to the coherence request of the driving thin-film transistor of each time pixel in the display floater.Comparatively speaking, switching thin-film transistor is used for switching the on off state of time pixel, has relatively high expectations for electric property equally with the employed thin-film transistor of peripheral circuit.In other words, for active array OLED display, the demand that drives thin-film transistor is different with the demand that comprises switching thin-film transistor and peripheral circuit thin-film transistor, and the present invention provides a kind of technology, can make the thin-film transistor that meets different demands in same processing procedure.
The present invention is switching transistor (the Switch TFT that the branch zones of different is made N-type thin-film transistor (NTFT) for the required use of OLED display periphery circuit, P type thin-film transistor (PTFT), the required use in OLED display viewing area simultaneously on same glass substrate, generally implement with NTFT) and the driving thin-film transistor (DrivingTFT generally with PTFT implement) of OLED display viewing area in order to drive luminescence component.For ease of narration, the switching transistor of the N-type thin-film transistor (NTFT) of the required use of peripheral circuit, P type thin-film transistor (PTFT) and the required use in viewing area general designation " non-driving thin-film transistor ".According to the present invention, the non-driving of manufacturing has the performance that meets the affiliated area user demand respectively with TFT and drive TFT.Non-driving has excellent electric property with TFT, and drive TFT then makes the flat-panel screens of making have good uniformity of luminance.
AMOLED display TFT manufacture method of the present invention program display is in Fig. 3 to Figure 12, in the present embodiment, the part on the left side of first area is used for the NTFT processing procedure that thin-film transistor is used in non-driving, the part on the right is used for the PTFT processing procedure that thin-film transistor is used in non-driving, and second area is the drive TFT processing procedure.
Please refer to Fig. 3, it shows the first step of the method according to this invention.One substrate layer 10 is provided, and its material can be light transmissive material such as glass.Form a resilient coating on substrate layer 10, in present embodiment, it is the oxide layer 23 of oxide (as silica) that this resilient coating comprises nitration case 21 and the material that material is nitride (as silicon nitride).Form an amorphous silicon layer on this resilient coating, this amorphous silicon layer is to utilize the first crystallization processing procedure to change into first polysilicon layer 30.This first crystallization processing procedure is a kind of high power laser light crystallization processing procedure, is called standard laser crystallization method, for example can adopt for example quasi-molecule laser annealing (Excimer Laser Anneal; ELA) method.
Please refer to Fig. 4, with first polysilicon layer 30 in addition graphical (patterning) and N-type is mixed (N-type doping) and channel doping (channel doping) afterwards, in the NTFT part, the polysilicon layer that keeps is to become active area 36, it is formed with drain region 36a, channel region 36b, source area 36c, and the PTFT part, the polysilicon layer of reservation then is active area 34, the active area 34 of PTFT is still without overdoping at this moment.The polysilicon layer 30 that it should be noted second area is all divested.The mode that divests can adopt any suitable technology, for example dry etching.Then, on total, form first separator 40 again.Preferable, the thickness of this first separator 40 is the smaller the better, is approximately 200 to 300 dusts on real the work.In present embodiment, the material of this first separator 40 is oxide, as silica.Preferable, its material is identical material with the oxide layer 23 of separator.
Please refer to Fig. 5, is structure formation one amorphous silicon layer 50 at Fig. 4.This amorphous silicon layer is to utilize the second crystallization processing procedure that it is changed into polysilicon, that is second polysilicon layer 51 shown in Figure 6.According to the present invention, this second crystallization processing procedure is different from the first crystallization processing procedure.This second crystallization processing procedure is to utilize non-laser crystallization technology or low power laser crystallization technique.Non-laser crystallization technology comprises solid phase crystallization method (Solid Phase Crystallization; SPC), crystallization inducing metal method (Metal InducedCrystallization; MIC), metal inducement side crystallization method (Metal Induced LateralCrystallization; MILC), electric field strengthens metal inducement side crystallization method (Field Enhanced MetalInduced Lateral Crystallization; FE-MILC), electric field strengthen rapid thermal annealing method (FieldEnhanced Rapid Thermal Annealing), boiler tube annealing process (furnace annealingprocess), quick thermal treatment process (rapid thermal process, RTP) etc.Low power laser crystallization method comprises low irradiation power excimer laser crystallization method, solid-state laser crystallization method etc.Only be illustration in these various crystallization methods of enumerating, the present invention is not limited to this.
See also Fig. 7, through graphical processing procedure, second polysilicon layer 51 of first area is divested, and then stays a part as active area 52 at second polysilicon layer of second area.Form one second separator 45 in overall structure then.The material of this second separator 45 can be oxide as first separator 40, yet for factors such as electrical considerations, in present embodiment, this second separator 45 comprises two-layer different materials up and down, and lower floor is oxide, and the upper strata is nitride.On real the work, after forming, this second separator 45 and first separator 40 will be difficult to difference.
Please refer to Fig. 8, on second separator 45 of first area and second area, form grid 62,64,66 respectively, and carry out lightly doped drain (Light Doped Drain; LDD) processing procedure, and form LDD district 36d, 36e.
By can obviously finding out among the figure, the thickness of the padded coaming (nitrogen layer 21, oxide layer 23 and first separator 40) of active area 52 bottom surfaces of second area before basal plate 10 end faces is thicker, and the active area 34 of first area, 36 bottom surfaces are thinner to the insulating material between substrate layer 10 end faces (nitrogen layer 21 and oxide layer 23 and do not have first separator 40).Opposite, the grid 62 of second area only is second separator 45 to the insulating material between the active area 52 (being called the second grid insulating barrier), and the grid 64 of first area, 66 then comprises first separator 40 and second separator 45 to the insulating material between the active area 34,36 (being called the first grid insulating barrier).Therefore, the second grid insulating barrier is thinner and the first grid insulating barrier is thicker, and both difference in thickness are the thickness of first separator 40.Consider the thick error of each tunic, generally speaking this difference in thickness should be greater than 30 dusts.
Please refer to Fig. 9, subregion 52a, the 52c of subregion 34a, the 34c of the active area of first area and the active area of second area accepts P type doping (P-type doping) and forms drain electrode 34a ', 52a ' and source electrode 34c ', 52c ' respectively.
Please refer to Figure 10, at structure formation first protective layer 70 and second protective layer 80 of Fig. 9, and form electrode 92,94,96 in any appropriate manner.The material of this first protective layer 70 can be nitride, and the material of this second protective layer 80 can be oxide.
Please refer to Figure 11, in structure formation one intermediate layer 85 of Figure 10, its material can be nitride, and the first thick flatness layer 100 of formation one deck makes the surface of total be flat condition on overall structure.The material of this flatness layer 100 can be light-transmitting materials.As shown in the figure, and utilize any suitable mode to form contact hole 101.
Please refer to Figure 12, form the anode 103 of OLED in the sidewall of this contact hole 101, and form second flatness layer 105.
According to the present invention, the polysilicon layer of the active area 52 of second area, be for the drive TFT that drives luminescence component and the active area 34 of first area, 36 polysilicon layer, be for non-driving NTFT and PTFT (for example peripheral circuit TFT and switching TFT), be to adopt two kinds of different crystallization method crystallizations, the i.e. first crystallization processing procedure and the second crystallization processing procedure, the former is to use standard laser crystallization method, for example quasi-molecule laser annealing method (Excimer Laser Anneal; ELA), the latter then is to use non-laser crystallization such as SPC or low temperature laser crystallization such as low-power excimer laser crystallization method.The polysilicon that two kinds of different crystallization modes produce has evident difference in grain properties.
Figure 13 shows the polysilicon grain structure that forms by the FE-RTA crystallization method in the non-laser crystallization.The crystal grain that forms through kind mode thus is very little as seen from the figure, is irregular, and structure is disorderly, and has the dendroid texture.Figure 14 shows the polysilicon column grainiess that forms by the ELA crystallization method in the standard laser crystallization method.The crystal grain that forms through kind mode thus is bigger as seen from the figure, is regular shape, and structure does not more have the dendroid texture.
Again, generally speaking, the mean difference of the grain size that two kinds of crystallization methods of standard laser and low power laser produce can reach more than 500 dusts.
Form the different polysilicon of characteristic as active area by different crystallization methods, can make the peripheral circuit TFT that has relatively high expectations for electric property keep excellent electric property, for example, the polysilicon that standard laser crystallization method is made has high carrier mobility, for example be about 100 square centimeters/volt second (cm
2/ Vs), and the carrier mobility variation is bigger, that is the carrier mobility standard deviation is higher; And requiring relatively low drive TFT for electric property, release is used standard laser crystallization method and is adopted non-laser crystallization or low power laser crystallization method, and is avoided producing after making display the problem of striated non-uniform light.The carrier mobility of the polysilicon of making by non-laser crystallization or low power laser crystallization method is lower, is approximately 10-40 square centimeter/volt second (cm
2/ Vs), therefore be not suitable for the TFT of peripheral circuit and the making of switching TFT, but the drive TFT for the driving OLED assembly is made then enough, and use the carrier mobility standard deviation of the AMOLED drive TFT that this kind polysilicon makes lower, that is it is less more stable to make a variation, can make to be assembled into after the display, the phenomenon of striated non-uniform light be improved significantly.
Figure 15 shows the electronic installation 600 that has according to display 110 of the present invention.Having as shown in figure 12, the driving thin-film transistor of structure and the OLED display 110 of switching thin-film transistor and peripheral circuit thin-film transistor can be the parts of electronic installation 600.This electronic installation 600 comprises according to this OLED display 110 and a power supply unit 700, person very, power supply unit 700 be coupled to OLED display 110 with provide power supply to OLED display 110 to produce image.Electronic installation 600 can be: mobile phone, digital camera, personal digital assistant, notebook, desktop computer, TV, satellite navigation, Vehicular display device or Portable DVD player.
In sum; though the present invention discloses as above with preferred embodiment; but this preferred embodiment is not in order to limit the present invention; the those of ordinary skill in this field; without departing from the spirit and scope of the present invention; all can do various changes and retouching, so protection scope of the present invention is as the criterion with the scope that claim defines.
Claims (14)
1. the method for fabricating thin film transistor of an organic light emitting diode display, this display comprises peripheral circuit and several times pixel, and each time pixel has luminescence component, it is characterized in that: this method comprises step to be had:
One substrate layer is provided, and this substrate layer has first area and second area;
On this substrate layer, form a resilient coating;
On this resilient coating, form first polysilicon layer by the first crystallization processing procedure;
Graphical this first polysilicon layer is to form the transistorized active area of the first film in this first area;
Form first separator;
Form second polysilicon layer by the second crystallization processing procedure on this first separator, this second crystallization processing procedure is different from this first crystallization processing procedure;
Graphical this second polysilicon layer is to form the active area of second thin-film transistor in this second area;
Form second separator; And
On this second separator, form the grid of the first film transistor and second thin-film transistor respectively.
2. method according to claim 1, it is characterized in that: this first film transistor comprises for the peripheral circuit thin-film transistor of peripheral circuit and for the switching thin-film transistor that switches time pixel status, and this second thin-film transistor comprises for the driving thin-film transistor that drives luminescence component.
3. method according to claim 1, it is characterized in that: this first crystallization processing procedure is standard laser crystallization method.
4. method according to claim 3, it is characterized in that: this first crystallization processing procedure is the excimer laser annealing method.
5. method according to claim 1, it is characterized in that: this second crystallization processing procedure is non-laser crystallization.
6. method according to claim 1, it is characterized in that: this second crystallization processing procedure is low power laser crystallization method.
7. an organic light emitting diode display has peripheral circuit and viewing area, and this viewing area has several times pixel, and each time pixel has a luminescence component, it is characterized in that: this organic light emitting diode display includes:
One substrate layer has first area and second area;
One the first film transistor, be formed at this first area of this substrate layer, it comprises one first resilient coating and is formed on this substrate layer, the active area that one first polysilicon layer forms is arranged on this resilient coating, and a first grid insulating barrier is covered on the active area and a first grid is arranged on this first grid insulating barrier; And
One second thin-film transistor, be formed at this second area of this substrate layer, it comprises this first resilient coating and is formed on this substrate layer, this first grid insulating barrier is formed on this first resilient coating, the active area that one second polysilicon layer forms is arranged on this first grid insulating barrier, one second grid insulating barrier is covered on the active area and a second grid is arranged on this second grid insulating barrier
Wherein this first polysilicon layer has different grain properties with this second polysilicon layer, and this first grid insulating barrier has different thickness with this second grid insulating barrier.
8. organic light emitting diode display according to claim 7, it is characterized in that: this first film transistor comprises for the peripheral circuit thin-film transistor of this peripheral circuit and for the state of switch thin-film transistor that switches this time pixel, and second thin-film transistor comprises for the driving thin-film transistor that drives this luminescence component.
9. organic light emitting diode display according to claim 7, it is characterized in that: this first polysilicon layer has different grainiesses with this second polysilicon layer.
10. organic light emitting diode display according to claim 9, it is characterized in that: this first polysilicon layer has the more neat column structure of grainiess, and this second polysilicon layer has the disorderly tree of grainiess.
11. organic light emitting diode display according to claim 7 is characterized in that: this first polysilicon layer has different grain sizes with this second polysilicon layer.
12. organic light emitting diode display according to claim 11 is characterized in that: the grain size mean difference of this first polysilicon layer and this second polysilicon layer reach 500 dusts or more than.
13. organic light emitting diode display according to claim 7 is characterized in that: the transistorized carrier mobility standard deviation of this first film is greater than the carrier mobility standard deviation of this second thin-film transistor.
14. organic light emitting diode display according to claim 7 is characterized in that: the thickness mean difference of this first grid insulating barrier and this second grid insulating barrier is greater than 30 dusts.
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| TWI422039B (en) * | 2011-05-11 | 2014-01-01 | Au Optronics Corp | Thin film transistor device and manufacturing method thereof |
| CN103984168B (en) * | 2013-02-08 | 2016-11-23 | 群创光电股份有限公司 | Display panels and liquid crystal indicator |
| TWI513003B (en) * | 2013-02-08 | 2015-12-11 | Innolux Corp | Liquid crystal display panel and liquid crystal display apparatus |
| CN104241298B (en) * | 2014-09-02 | 2017-11-10 | 深圳市华星光电技术有限公司 | TFT backplate structure and preparation method thereof |
| CN105097667B (en) * | 2015-06-24 | 2018-03-30 | 深圳市华星光电技术有限公司 | The preparation method and low temperature polycrystalline silicon TFT substrate structure of low temperature polycrystalline silicon TFT substrate structure |
| CN106298645B (en) * | 2016-08-17 | 2019-04-02 | 深圳市华星光电技术有限公司 | A kind of preparation method of TFT substrate |
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| CN1619607A (en) * | 2003-11-17 | 2005-05-25 | 三星Sdi株式会社 | Flat panel display and method for fabricating the same |
| CN1691353A (en) * | 2004-04-26 | 2005-11-02 | 统宝光电股份有限公司 | Thin-film transistor and method for making same |
| CN101071793A (en) * | 2006-05-11 | 2007-11-14 | 统宝光电股份有限公司 | Flat panel display and fabrication method and thereof |
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| CN1691353A (en) * | 2004-04-26 | 2005-11-02 | 统宝光电股份有限公司 | Thin-film transistor and method for making same |
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