CN101469415B - Plasma auxiliary organic thin film deposition apparatus - Google Patents
Plasma auxiliary organic thin film deposition apparatus Download PDFInfo
- Publication number
- CN101469415B CN101469415B CN2007103023630A CN200710302363A CN101469415B CN 101469415 B CN101469415 B CN 101469415B CN 2007103023630 A CN2007103023630 A CN 2007103023630A CN 200710302363 A CN200710302363 A CN 200710302363A CN 101469415 B CN101469415 B CN 101469415B
- Authority
- CN
- China
- Prior art keywords
- plasma
- thin film
- organic thin
- generating chamber
- film deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention provides a plasma-aided organic thin film deposition device, which mainly comprises a plasma generating chamber and a deposition chamber, wherein the plasma generating chamber can perform plasma thermal cracking to the polymeric material gas in the plasma generating chamber; the deposition chamber is communicated with the plasma generating chamber and is used for receiving the thermally cracked polymeric material gas, the deposition chamber comprises a base plate device on which the thermally cracked polymeric material gas is deposited to form an organic thin film; the plasma generating chamber is separated from the deposition chamber so that a low-temperature thin film deposition technique is provided and the plasma ion is prevented from colliding the base plate directly; besides, a guiding device can be arranged at an outlet port of the plasma generating chamber to guide or disturb the polymeric material gas, so that the polymeric material gas is prevented from gathering at the outlet port or the center of the base plate excessively, and the surface roughness of the organic thin film is improved effectively and the uniformity is improved.
Description
Technical field
The present invention relates in particular to the isolating organic thin film deposition apparatus in a kind of plasma generation chamber and sediment chamber about a kind of plasma auxiliary organic thin film deposition apparatus.
Background technology
To cause its work-ing life of short duration owing to OLED (organic light emitting diode) display panel very easily absorbs airborne moisture, can't contend with the LCD panel, causes OLED product ubiquity obstacle in the market expansion; And after the collocation of polymer organic film and inorganic thin film constructs multilayer film, can effectively reduce aqueous vapor to enter probability, the OLED product life is prolonged.
Polyphenylene ethyl (Parylene) organic film can form the free of pinholes rete, and the characteristic of the fabulous oxygen that blocks water is arranged, and the colourless and high-clarity of material has high insulation strength, and opposing is got rusty, burn into weathering etc.; General polyphenylene ethyl (Parylene) plated film mode is with pulverous material at present, after the process of overflash (150 ℃) and cracking (650 ℃), imports in the sediment chamber, and at room temperature the mode with vapour deposition (CVD) is deposited on substrate surface; But, organic film surface evenness that this kind mode forms and roughness inequality.
At patent, No. 20050000435, US " Reactor forproducing reactive intermediates for low dielectric constant polymer thin films " is disclosed in early days as U.S.'s patent of invention, and No. 5958510, U.S. patent of invention US " Method and apparatus for forming a thinpolymer layer on an integrated circuit structure ", these two organic film technologies that patent proposed, carry out cracking in thin film deposition chamber outside, then interrupt link in the thin film deposition chamber interior with plasma body again, its main effect is to make the organic film of low-k, promote thin film deposition speed and the thermo-mechanical property that improves film, but and not mentioned uniformity coefficient and the roughness of improving organic film; And it should be noted that its plasma body auxiliary process carries out in the substrate of thin film deposition and chamber, thin film deposition processes temperature height not only, and because plasma ion directly clashes into substrate, and influence organic film moulding quality and life-span.
Summary of the invention
The objective of the invention is to propose a kind of plasma auxiliary organic thin film deposition apparatus, can avoid plasma ion directly to clash into substrate, and the low temperature thin film depositing operation can be provided, effectively to improve the organic film surfaceness, to promote its homogeneity.
For achieving the above object, the present invention proposes a kind of plasma auxiliary organic thin film deposition apparatus, it mainly is made of a plasma body generating chamber and a sediment chamber, but the polymerizable material gas in these these gas ions generating chamber of plasma body generating chamber plasma body thermo-cracking; This sediment chamber is communicated with this plasma body generating chamber, and in order to receive the polymerizable material gas of this thermo-cracking, this sediment chamber comprises a board device, and this board device can supply the polymerizable material gas aggradation of this thermo-cracking thereon to form organic film.
Beneficial effect of the present invention is, by plasma generation chamber is separated with the sediment chamber, provides a low temperature thin film depositing operation, and can avoid plasma ion directly to clash into substrate, can effectively improve the organic film surfaceness and promote its homogeneity.
Describe the present invention below in conjunction with the drawings and specific embodiments, but not as a limitation of the invention.
Description of drawings
Fig. 1 is one embodiment of the invention structural representation;
Fig. 2 is the schematic perspective view that guiding device of the present invention cooperates plasma generation chamber;
Fig. 3 is the schematic perspective view that the oval tubular plasma generation chamber of guiding device is not set;
Fig. 4 is the schematic perspective view that the rectangle plasma generation chamber of guiding device is not set;
Fig. 5 is the concentration difference rate comparison diagram of the difform exit end of plasma generation chamber of the present invention at substrate;
Fig. 6 is another embodiment of the present invention structural representation.
Wherein, Reference numeral
1,1a, 1b, 1c-plasma generation chamber
The 11-diffuser
12,12a, 12b, 12c-exit end
14,14a, 14b, 14c-guiding device
141, the end that contracts in the 141a-
142,142a-expansion end
The 2-sediment chamber
The 21-board device
The 211-supporting device
The 212-rotating shaft
The 213-CD-ROM drive motor
The 3-evaporator room
The 31-input channel
The control of 4-mass flow rate
5-radio frequency (RF) producer
6-working gas diffuser
61,62,63-input channel
611,621,631-flow director
The 7-substrate
The 8-pumping unit
The 9-cooling hinders but device
The 10-cracking room
Embodiment
For making purpose of the present invention, structure, feature and function thereof are had further understanding, with reference to the accompanying drawings and cooperate embodiment to be described in detail as follows, but the following drawings and embodiment are aid illustration only, and the present invention is not limited to drawings and Examples.
See also embodiment illustrated in fig. 1, plasma auxiliary organic thin film deposition apparatus provided by the invention, it mainly comprises a plasma body generating chamber 1 and a sediment chamber 2.
This plasma body generating chamber 1 is communicated with an evaporator room 3, this evaporator room 3 has an input channel 31, can be by these input channel 31 input argons (Ar), enter in this plasma body generating chamber 1 in order to polyphenylene ethyl (parylene), p-Xylol (paraxylylene) or the polyparaphenylene dimethylene polymerizable materials such as (PPX) that carries after the evaporation, this polymerizable material is evaporated to polymerizable material gas and imports in this plasma body generating chamber 1 in this evaporator room 3, usually, the working temperature in this evaporator room 3 is about 130～170 degree Celsius; Can between this evaporator room 3 and this plasma body generating chamber 1, a mass flow rate controller 4 be set, in order to control the flow rate that polymerizable material gas that this evaporator room 3 evaporated flows into these gas ions generating chamber 1.
Be provided with a diffuser 11 and an exit end 12 in this plasma body generating chamber 1, this diffuser 11 is arranged at the central lower of a guiding device 14, this diffuser 11 is a vitrified pipe hollow tube, this vitrified pipe is sheathed on below in this guiding device 14, after the effect of relevant this guiding device 14 will be illustrated in; This diffuser 11 and this plasma body generating chamber 1 inner and this exit end 12 formation one path; Moreover, this plasma body generating chamber 1 connects a radio frequency (RF) producer 5 and a working gas diffuser 6, by this radio frequency (RF) producer 5 energizes, make the gas in the working gas diffuser 6 enter plasma generation chamber formation generation plasma source, this radio frequency (RF) producer 5 can provide energy to jigger coupling formula plasma source (ICP), plasma body forms the zone and contains diffuser 11, as shown in the figure, this working gas diffuser 6 has three input channels 61,62,63, and this three input channel 61,62,63 connect a flow director 611 respectively, 621,631, can import the different operating fluid whereby, argon (Ar) for example, oxygen (O2) and nitrogen (N2) or the like, and by corresponding flow director 611,621,631 control working fluid flow rates; When polymerizable material gas through evaporator room 3 heating evaporations, after carrying by the argon gas in the input channel 31, flow into the flow of diffuser 11 by mass flow rate controller 4 pilot-gas, because forming the zone, plasma body comprises diffuser 11, diffuser 11 is produced high temperature by plasma bombardment, therefore the gas that feeds diffuser 11 is cleaved under this high temperature, and gas carries out plasma heat and dissociates in this plasma body generating chamber 1.
About this sediment chamber 2, it is arranged at this plasma body generating chamber 1 top and is interconnected with this plasma body generating chamber 1, can be in order to receive the polymerizable material gas of this 1 thermo-cracking of plasma body generating chamber; This sediment chamber 2 comprises a board device 21, this board device 21 comprises a supporting device 211, a rotating shaft 212, the substrate 7 of the bottom of this supporting device 211 in order to the moulding organic film to be set, this rotating shaft 212 connects a CD-ROM drive motor 213, drive this rotating shaft 212 rotations by this CD-ROM drive motor 213, can drive this substrate 7 rotations synchronously, simultaneously in this, when the polymerizable material gas of this 1 thermo-cracking of plasma body generating chamber rises to substrate 7, can form organic film in these substrate 7 surface depositions; Mandatory declaration be, this supporting device 211 is not limited to certain specific kenel, being enough to make this substrate 7 to be arranged at its bottom gets final product, and the swivel arrangement that this rotating shaft 212 and CD-ROM drive motor 213 are constituted, its purpose is to drive this supporting device 211 rotations, and then drive substrate 7 rotates synchronously, therefore, this rotating shaft 212 and CD-ROM drive motor 213 can substitute by other devices, for example CD-ROM drive motor 213 can crawler belt, belt or gear substitute, and the Athey wheel that rotating shaft 212 can be relative, belt pulley or gear substitute, and all purposes that drives these supporting device 211 rotations that realizes get final product, this does not repeat them here for the known technology that the correlative technology field personnel are familiar with.
This sediment chamber 2 is communicated with a pumping unit 8 again, by 8 pairs of these sediment chambers 2 of this pumping unit and this plasma
Through said structure, can summarize mainly comprising of deposition of organic thin film method of the present invention of following two steps:
One, diffuser 11 is clashed into by plasma ion, polymerizable material gas is sent in this plasma body generating chamber 1 carried out the plasma body thermo-cracking; Diffuser 11 can be carried out thermo-cracking to about 600～900 degree Celsius by plasma heating, and the particle and the irregular bond that interrupts material of electronics of band energy are sent into this sediment chamber 2 again in the material use plasma body after the thermo-cracking;
Two, the polymerizable material gas after the thermo-cracking enters this sediment chamber 2, deposition of organic thin film on substrate 7; Because this plasma body generating chamber 1 and these sediment chamber's 2 isolating two chambers, this thin film deposition processes is away from this plasma body thermal cracking process, therefore the operating ambient temperature in this sediment chamber 2 of may command is about 80～100 degree Celsius, that is the sedimentary low temperature process temperature of the most suitable organic film, can avoid plasma ion directly to clash into substrate 7 simultaneously; As for set rotatable board device 21 in this sediment chamber 2, then help improving film roughness and uniformity coefficient.
About above-mentioned film roughness and the uniformity coefficient problem improved, can realize by the uniformity coefficient of controlling the polymerizable material gas of sending by the exit end 12 of this plasma body generating chamber 1 in addition; As shown in Figure 1, exit end 12 in this plasma body generating chamber 1 is provided with a guiding device 14, the central lower of this guiding device 14 is provided with this diffuser 11, this guiding device 14 is a taper device, this taper device has end 141 and one expansion end 142 that contracts in, end 141 contract in being somebody's turn to do towards this plasma body generating chamber 1, and this expansion end 142 is towards this sediment chamber 2; When through the polymerizable material gas of diffuser 11 thermo-crackings and plasma chamber 1 when exit end 12 enters sediment chamber 2 and passes through this guiding device 14, can be by the air-flow angle of adjusting this polymerizable material gas that is provided with of this expansion end 142, around the polymeric material gas channeling, the center of avoiding concentrating on this exit end 12 sprays to substrate 7, cooperate this rotatable board device 21 simultaneously again, can effectively improve the sedimentary uniformity coefficient of organic film; Mandatory declaration be that the position that is provided with of this diffuser 11 is not limited to this guiding device 14 central lower, as long as can avoid this exit end 12 and can import smoothly in this plasma body generating chamber 1.
Solid about above-mentioned this guiding device is implemented aspect, can consult embodiment illustrated in fig. 2, this guiding device 14a has contract in one an end 141a and an expansion end 142a, the plasma generation chamber 1a that cooperates with this guiding device 14a presents oval tubular, its exit end 12a is provided with guiding device 14a, and the central lower of this guiding device 14a is provided with a diffuser 11a and is communicated with inner and this exit end 12a of the 1a of this plasma body generating chamber; Cylindric plasma body with the 1a of this plasma body generating chamber generation shown in Figure 2, its exit end 12a is provided with guiding device 14a, cylindric plasma body with plasma generation chamber 1b generation shown in Figure 3, its exit end 12b is not provided with guiding device 14a, and the rectangle plasma body of the 1c of this plasma body generating chamber generation shown in Figure 4, its exit end 12c is not provided with guiding device 14a and compares mutually, the 1b of this plasma body generating chamber has round exit end 12b, and the 1c of this plasma body generating chamber has long strip shape exit end 12c; Via experiment showed, under the same polymeric material specific gas flow rate, the plasma generation chamber 1a that is provided with guiding device 14a has average concentration difference rate.As shown in Figure 5, the curve A representative plasma generation chamber 1a that is provided with guiding device 14a shown in Figure 2, the curve B representative plasma generation chamber 1b with round exit end 12b shown in Figure 3, the curve C representative plasma generation chamber 1c with long strip shape exit end 12c shown in Figure 3; Wherein, this curve A is shown in substrate center's (X-axis initial point) to the width apart from 0.2 meter of substrate, can keep comparatively mild concentration difference rate; This curve B shows that then the concentration difference rate of circular port exit end is higher than the square exit end of this curve C; Mandatory declaration be, the exit end form and the indefinite of relevant plasma generation chamber of the present invention, can be circle, long strip shape or random geometry, the kenel of this guiding device is not defined as taper yet, focus on polymerizable material gas being produced water conservancy diversion or flow-disturbing effect, avoid concentrations to get final product in exit end or substrate center by being provided with of guiding device.
In sum, plasma auxiliary organic thin film deposition apparatus provided by the invention, its characteristics are plasma generation chamber is separated with the sediment chamber, therefore can provide a low temperature thin film depositing operation, and can avoid plasma ion directly to clash into substrate, can effectively improve the organic film surfaceness and promote its homogeneity; Moreover, another characteristics of the present invention are to utilize plasma body that polymerizable material gas is carried out thermo-cracking, therefore the setting that can omit cracking room, simplified apparatus, but consideration based on plasma dissociation speed, also can comply with the required cracking room that is provided with again, see also embodiment illustrated in fig. 6, its characteristics are to be provided with a cracking room 10 between this evaporator room 3 and this mass flow rate controller 4, receive polymerizable material gas that this evaporator room 3 evaporates by this cracking room 10, and this polymerizable material gas carried out early stage cracking, and its role is to improve rate of cleavage, shorten the organic film depositing time; As for other form the effect of members and the effect that can realize with embodiment illustrated in fig. 1 identical, the explanation that can consult Fig. 1 embodiment.
Certainly; the present invention also can have other various embodiments; under the situation that does not deviate from spirit of the present invention and essence thereof; those of ordinary skill in the art can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection domain of the appended claim of the present invention.
Claims (16)
1. a plasma auxiliary organic thin film deposition apparatus is characterized in that, comprises:
One plasma body generating chamber is in order to carry out thermo-cracking to the polymerizable material gas in this plasma body generating chamber;
One sediment chamber, separate setting with this plasma body generating chamber connection and with this plasma body generating chamber, in order to receive this polymerizable material gas of thermo-cracking, this sediment chamber comprises a board device, this board device has a rotatable substrate, and this board device can supply the polymerizable material gas aggradation of this thermo-cracking thereon to form organic film;
Wherein, this plasma body generating chamber has an exit end, this exit end is provided with a guiding device, this guiding device is a taper device, this taper device has contract in one end and an expansion end, and the end that contracts in this is towards this plasma body generating chamber, and this expansion end is towards this sediment chamber, and this exit end can for the polymerizable material gas of this thermo-cracking by and flow into this sediment chamber, the cross section of this exit end can be rounded, long strip shape or random geometry.
2. plasma auxiliary organic thin film deposition apparatus according to claim 1 is characterized in that, this plasma body generating chamber is communicated with an evaporator room, and it is polymerizable material gas that this evaporator room can evaporate polymerizable material.
3. plasma auxiliary organic thin film deposition apparatus according to claim 1, it is characterized in that, this plasma body generating chamber is communicated with a working gas diffuser, and this working gas diffuser is imported this plasma body generating chamber in order to the working gas that the plasma body thermo-cracking is required.
4. plasma auxiliary organic thin film deposition apparatus according to claim 1 is characterized in that, this plasma body generating chamber connects a radio frequency generators, supplies with plasma source by this radio frequency generators, makes plasma source import this plasma body generating chamber.
5. plasma auxiliary organic thin film deposition apparatus according to claim 1 is characterized in that, the board device of this sediment chamber comprises:
One supporting device, its bottom be in order to being provided with this rotatable substrate of moulding organic film, and this plasma body generating chamber of this substrate distance and this sediment chamber are communicated with place's certain distance;
One swivel arrangement is connected with this supporting device, in order to drive this supporting device rotation of this supporting device.
6. plasma auxiliary organic thin film deposition apparatus according to claim 1 is characterized in that this sediment chamber is communicated with a pumping unit, and this pumping unit is in order to produce suction force to this sediment chamber and this plasma body generating chamber.
7. plasma auxiliary organic thin film deposition apparatus according to claim 1 is characterized in that, is provided with a cooling between this pumping unit and this sediment chamber and hinders but device, in order to catch not film forming polymerizable material gas residual in this sediment chamber.
8. plasma auxiliary organic thin film deposition apparatus according to claim 1 is characterized in that, this polymerizable material can be polyphenylene ethyl, p-Xylol or polyparaphenylene dimethylene.
9. plasma auxiliary organic thin film deposition apparatus according to claim 2, it is characterized in that, be provided with a mass flow rate controller between this evaporator room and this plasma body generating chamber, in order to control the flow rate that polymerizable material gas that this evaporator room evaporates flows into these gas ions generating chamber.
10. plasma auxiliary organic thin film deposition apparatus according to claim 9, it is characterized in that, be provided with a cracking room between this evaporator room and this mass flow rate controller, this cracking room can receive this evaporator room and evaporate polymerizable material gas, and this polymerizable material gas is carried out early stage cracking.
11. plasma auxiliary organic thin film deposition apparatus according to claim 2 is characterized in that, the working temperature in this evaporator room is about 130～170 degree Celsius.
12. plasma auxiliary organic thin film deposition apparatus according to claim 1 is characterized in that, this guiding device is in order to adjust the air-flow angle of this polymerizable material gas.
13. plasma auxiliary organic thin film deposition apparatus according to claim 3 is characterized in that, this working gas comprises argon, oxygen and nitrogen.
14. plasma auxiliary organic thin film deposition apparatus according to claim 3 is characterized in that, this diffuser is a vitrified pipe.
15. plasma auxiliary organic thin film deposition apparatus according to claim 5 is characterized in that, this swivel arrangement comprises:
One rotating shaft connects this supporting device;
One CD-ROM drive motor is in order to drive this rotating shaft rotation.
16. plasma auxiliary organic thin film deposition apparatus according to claim 7 is characterized in that, cooling hinders but that device is a freezing trap.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007103023630A CN101469415B (en) | 2007-12-25 | 2007-12-25 | Plasma auxiliary organic thin film deposition apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007103023630A CN101469415B (en) | 2007-12-25 | 2007-12-25 | Plasma auxiliary organic thin film deposition apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101469415A CN101469415A (en) | 2009-07-01 |
| CN101469415B true CN101469415B (en) | 2010-08-25 |
Family
ID=40827212
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007103023630A Active CN101469415B (en) | 2007-12-25 | 2007-12-25 | Plasma auxiliary organic thin film deposition apparatus |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101469415B (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI564427B (en) * | 2009-12-18 | 2017-01-01 | 財團法人工業技術研究院 | Method for forming parylene film |
| CN102115876A (en) * | 2009-12-31 | 2011-07-06 | 财团法人工业技术研究院 | Chemical vapor deposition device and method for forming poly-p-xylylene film |
| CN102383106B (en) * | 2010-09-03 | 2013-12-25 | 甘志银 | Metal organic chemical vapour deposition reaction chamber for fast removing residual reaction gas |
| TWI458843B (en) * | 2011-10-06 | 2014-11-01 | Ind Tech Res Inst | Evaporation apparatus and method of forminf organic film |
| KR102150625B1 (en) * | 2013-03-15 | 2020-10-27 | 삼성디스플레이 주식회사 | Coating apparatus |
| CN103896283B (en) * | 2014-02-19 | 2016-03-30 | 上海璞泰来新能源科技股份有限公司 | A kind of manufacture method of SiO powder and manufacturing installation |
| US10504741B2 (en) * | 2017-02-28 | 2019-12-10 | Tokyo Electron Limited | Semiconductor manufacturing method and plasma processing apparatus |
| JP2019204815A (en) * | 2018-05-21 | 2019-11-28 | 東京エレクトロン株式会社 | Substrate processing method and substrate processing apparatus |
| US11898248B2 (en) * | 2019-12-18 | 2024-02-13 | Jiangsu Favored Nanotechnology Co., Ltd. | Coating apparatus and coating method |
| CN116892131A (en) * | 2023-05-16 | 2023-10-17 | 国网浙江省电力有限公司电力科学研究院 | Nanometer coating method for improving ageing resistance of plant insulating oil |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5958510A (en) * | 1996-01-08 | 1999-09-28 | Applied Materials, Inc. | Method and apparatus for forming a thin polymer layer on an integrated circuit structure |
-
2007
- 2007-12-25 CN CN2007103023630A patent/CN101469415B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5958510A (en) * | 1996-01-08 | 1999-09-28 | Applied Materials, Inc. | Method and apparatus for forming a thin polymer layer on an integrated circuit structure |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101469415A (en) | 2009-07-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101469415B (en) | Plasma auxiliary organic thin film deposition apparatus | |
| US8235002B2 (en) | Plasma assisted apparatus for organic film deposition | |
| KR102546221B1 (en) | Vapor phase deposition of organic films | |
| KR101602517B1 (en) | Plasma source and methods for depositing thin film coatings using plasma enhanced chemical vapor deposition | |
| KR101075131B1 (en) | Evaporating apparatus, apparatus for controlling evaporating apparatus, method for controlling evaporating apparatus, method for using evaporating apparatus and method for manufacturing blowing port | |
| US20100140756A1 (en) | Apparatus for manufacturing silicon oxide thin film and method for forming the silicon oxide thin film | |
| CN102948255B (en) | Sealing film formation method, sealing film formation device | |
| JP2018501405A (en) | Material deposition apparatus, vacuum deposition system, and material deposition method | |
| KR20220123336A (en) | Nozzle for a distribution assembly of a material deposition source arrangement, material deposition source arrangement, vacuum deposition system and method for depositing material | |
| TW200837206A (en) | Vapor deposition apparatus, device for controlling vapor deposition apparatus, method for controlling vapor deposition apparatus, and method for operating vapor deposition apparatus | |
| CN101555588B (en) | Low-temperature plasma system based on atmosphere pressure glow discharge | |
| CN1912179A (en) | Apparatus and method for forming a film, patterning method and method for manufacturing an optical device | |
| CN1807681A (en) | Evaporating device and method utilizing same | |
| EP2190263B1 (en) | Process for producing thin organic film | |
| Toftmann et al. | High laser-fluence deposition of organic materials in water ice matrices by “MAPLE” | |
| JP2007054825A (en) | Method for film formation, method for patterning, and method for manufacturing electronic device using them | |
| CN1694977A (en) | High velocity method for deposing diamond films from a gaseous phase in shf discharge plasma and device for carrying out said method | |
| CN101348903A (en) | Multifunctional small film deposition equipment | |
| US20170084448A1 (en) | Low temperature conformal deposition of silicon nitride on high aspect ratio structures | |
| US20110008525A1 (en) | Condensation and curing of materials within a coating system | |
| WO2021120542A1 (en) | Coating apparatus and coating method | |
| EP2646605A1 (en) | Epitaxial deposition apparatus, gas injectors, and chemical vapor management system associated therewith | |
| CN105473761B (en) | Apparatus and method for thin film deposition | |
| JP6981356B2 (en) | Film forming equipment and film forming method | |
| KR20140033669A (en) | Apparatus for coating with parylene |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |