CN101414732B - Semiconductor laser apparatus and optical apparatus - Google Patents
Semiconductor laser apparatus and optical apparatus Download PDFInfo
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- CN101414732B CN101414732B CN 200810179134 CN200810179134A CN101414732B CN 101414732 B CN101414732 B CN 101414732B CN 200810179134 CN200810179134 CN 200810179134 CN 200810179134 A CN200810179134 A CN 200810179134A CN 101414732 B CN101414732 B CN 101414732B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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Abstract
Provided is a semiconductor laser apparatus, comprising a plurality of semiconductor laser devices of different lasing wavelengths and driving even a semiconductor laser device with a short wavelength, using a power supply circuit that generates low voltages, and also to provide an optical apparatus. The semiconductor laser apparatus 500 comprises a first semiconductor laser device 11 that emits a blue-violet laser beam, a second semiconductor laser device 12 that emits a red laser beam, and a conductive package body 19. The first semiconductor laser device 11 has a p-side pad electrode and an n-side electrode. The p-side pad electrode and n-side electrode of the first semiconductor laser device 11 are electrically isolated from the package body 19. The p-side pad electrode of the first semiconductor laser device 11 is connected with a drive circuit 501 that generates a positive potential, while the n-side electrode of the first semiconductor laser device 11 is connected with a DC power supply 502 that generates a negative potential.
Description
This case is
On March 11st, 2005, application number is
200510053944.6, denomination of invention is
Semicondcutor laser unit and electro-optical deviceThe dividing an application of patent application.
Technical field
The present invention relates to have the semicondcutor laser unit and the electro-optical device of the different semiconductor Laser device of wavelength.
Background technology
In recent years along with the high performance of personal computer and multimedia instrument, significantly increase as the amount of information of process object.Along with the increase of amount of information, developing the high speed of reply information processing and the optical record medium and the drive unit thereof of high capacity.
The concrete example of this optical record medium has close-coupled CD (below be called CD) and digital versatile disc (below be called DVD).The concrete example of carrying out the drive unit of the reproduction of these optical record mediums and record has CD with semicondcutor laser unit and DVD semicondcutor laser unit.CD can penetrate near the infrared laser (the wavelength 790nm) that uses with semicondcutor laser unit when carrying out CD reproduction or record, DVD can penetrate near the red laser (the wavelength 658nm) of use when carrying out DVD reproduction or record with semicondcutor laser unit.
The drive unit of optical record medium has the semicondcutor laser unit that can carry out CD and DVD reproduction or record in addition.This semicondcutor laser unit can penetrate the red laser that infrared laser that CD uses and DVD use.
Using under the situation of this semicondcutor laser unit, and CD is being compared with the situation of semicondcutor laser unit and usefulness with DVD with semicondcutor laser unit,, can make the drive unit simplification of optical record medium because the parts number of packages of formation is reduced.
On the other hand, in order to improve the packing density in the optical disk system, developed near the DVD semiconductor Laser device of future generation of the bluish violet color laser (wavelength is the 400nm) of ejaculation wavelength (oscillation wavelength) weak point.Also developed the semicondcutor laser unit (with reference to patent documentation 1) that is equipped with the semiconductor Laser device that penetrates this bluish violet color laser in addition.
Following semiconductor Laser device the ejaculation bluish violet color laser calls the bluish violet semiconductor Laser device, the semiconductor Laser device that penetrates infrared laser is called the infrared semiconductor laser element, and the semiconductor Laser device that penetrates red laser is called the red semiconductor laser diode.
Below the spy being opened the semicondcutor laser unit described in the 2001-230502 communique describes.Figure 29 is the special schematic diagram of opening the semicondcutor laser unit described in the 2001-230502 communique of expression.
As shown in figure 29, bluish violet semiconductor Laser device 901 is bonded on the support substrate 903a that becomes one with module body 903 by welding layer 905.This bluish violet semiconductor Laser device 901 and support substrate 903a carry out machinery with being connected of electricity.
Infrared semiconductor laser element 902a and red semiconductor laser diode 902b are bonded in respectively on electrode 901a, the 901b of this bluish violet semiconductor Laser device 901 by welding layer 906,907.
This infrared semiconductor laser element 902a and red semiconductor laser diode 902b constitute single chip integrated integrated semiconductor laser device 902 on same substrate.In this case, since infrared semiconductor laser element 902a and red semiconductor laser diode 902b either party can individual drive, so on bluish violet semiconductor Laser device 901, insulating barrier 904 can be clipped in the middle, form the electrode 901a that connects infrared semiconductor laser element 902a.This external application dead ring 908a～908c forms power pin 909a～909c in the mode with module body 903 insulation.Surface forming electrode 902c on integrated semiconductor laser device 902.
Electrode 901a, 901b, 901c are connected respectively on power pin 909a～909c with lead 910a～910c.Give support substrate 903a power supply from the power pin 903b that is connected on the module body 903 in addition.
Can from semicondcutor laser unit, select like this to penetrate after any a kind in infrared laser, red laser and the bluish violet color laser.
[patent documentation 1] spy opens the 2001-230502 communique
Penetrate the bluish violet semiconductor Laser device 901 of the short bluish violet color laser of wavelength and compare starting of oscillation voltage height with the red semiconductor laser diode 902b of infrared semiconductor laser element 902a that penetrates the long infrared laser of ripple or ejaculation red laser.This high starting of oscillation voltage is because relevant with the material that constitutes bluish violet semiconductor Laser device 901.
Figure 30 is the circuit diagram of the semicondcutor laser unit of Figure 29.
As shown in figure 30, in order to drive the high bluish violet semiconductor Laser device 901 of starting of oscillation voltage, the module body 903 with respect to general ground connection is used need apply high voltage on other power pin 909b.Therefore open in the semicondcutor laser unit described in the 2001-230502 communique the spy, can not use the drive circuit that can obtain more cheaply that is used to drive infrared semiconductor laser element 902a and red semiconductor laser diode 902b now, need to use the new drive circuit corresponding with high voltage.
Summary of the invention
The purpose of this invention is to provide and have the different a plurality of semiconductor Laser devices of oscillation wavelength, also can drive the semicondcutor laser unit and the electro-optical device of short wavelength's semiconductor Laser device simultaneously with the power circuit that produces low-voltage.
Another object of the present invention provides has the different a plurality of semiconductor Laser devices of starting of oscillation voltage, also can drive the semicondcutor laser unit and the electro-optical device of the semiconductor Laser device of high starting of oscillation voltage simultaneously with the power circuit that produces low-voltage.
The semicondcutor laser unit of first invention comprises
First semiconductor Laser device with light of an electrode and another electrode, ejaculation first wavelength;
Have an electrode and another electrode, penetrate second semiconductor Laser device than the light of long second wavelength of first ripple; With
Accommodate the conductivity assembly of described first and second semiconductor Laser devices,
Electrode of described first semiconductor Laser device and another electrode and component insulation.
In the semicondcutor laser unit of first invention, have first semiconductor Laser device, second semiconductor Laser device that penetrates second wavelength light longer that penetrates first wavelength light, the conductivity assembly that first and second semiconductor Laser devices are housed than first semiconductor Laser device.This first and second semiconductor Laser device has an electrode and another electrode respectively.Electrode of first semiconductor Laser device and another electrode and component insulation.
The starting of oscillation voltage ratio of first semiconductor Laser device that wherein penetrates short wavelength's light penetrates the starting of oscillation voltage height of second semiconductor Laser device of long wavelength light.In this case, by the power circuit that generates positive potential is connected on the electrode of first semiconductor Laser device, the power circuit that generates negative potential is connected on another electrode of first semiconductor Laser device, can the voltage higher than the starting of oscillation voltage of first semiconductor Laser device be applied on first semiconductor Laser device.In semicondcutor laser unit, can drive short wavelength's first semiconductor Laser device with the power circuit that produces low-voltage like this with the different a plurality of semiconductor Laser devices of oscillation wavelength.
Owing to first semiconductor Laser device and component insulation, the parasitic capacitance that causes because of assembly reduces, and can make the first semiconductor Laser device high speed motion in addition.
An electrode of second semiconductor Laser device is electrically connected with assembly.
In this case, because an electrode of second semiconductor Laser device is electrically connected with assembly, so needn't connect the distribution that is used for an electrode grounding of second semiconductor Laser device.
First semiconductor Laser device also can be made of the material that contains nitride-based semiconductor.In this case, first semiconductor Laser device that is made of the material that contains nitride-based semiconductor can penetrate the bluish violet color laser shorter than second wavelength.Its utilization as a result has the bluish violet color laser of small spot diameter, can realize the densification and the high capacity of optical disk system.
Also can be configured in the central part that more relies on assembly than second semiconductor Laser device to first semiconductor Laser device.
In this case, determine in the centre that is positioned at lens by the centre of handle component, from the centre of the light scioptics of first wavelength that penetrates than first semiconductor Laser device of the second semiconductor Laser device wave of oscillation length, optically focused is on object.Consequently the influence of the aberration (mainly being spherical aberration) that causes of lens reduces, and makes the optically focused of small luminous point become possibility.
The electro-optical device of second invention has semicondcutor laser unit, first power supply, second source, and semicondcutor laser unit comprises having an electrode and another electrode, penetrates first semiconductor Laser device of the light of first wavelength; Have an electrode and another electrode, penetrate second semiconductor Laser device than the light of long second wavelength of first ripple; With the conductivity assembly that first and second semiconductor Laser devices are housed, electrode of first semiconductor Laser device and another electrode and component insulation, with first power drives, second semiconductor Laser device, give another electrode of first semiconductor Laser device current potential of a polarity with first power supply, give an electrode of first semiconductor Laser device simultaneously with the current potential of second source handle and an opposite polarity polarity.
In the electro-optical device of second invention, have semicondcutor laser unit, first power supply and second source.Wherein first semiconductor Laser device penetrates the light of first wavelength shorter than second semiconductor Laser device.With first power drives, second semiconductor Laser device.A polarity current potential another electrode, give an electrode of first semiconductor Laser device with first power supply simultaneously with the current potential of a second source handle and a polarity opposite polarity to first semiconductor Laser device.
Wherein, the starting of oscillation voltage ratio of first semiconductor Laser device of first wavelength light of ejaculation weak point penetrates the starting of oscillation voltage height of second semiconductor Laser device of the second long wavelength light.In this case, be applied on second semiconductor Laser device than the high voltage of the second semiconductor Laser device starting of oscillation voltage from first power supply handle.In addition by on another electrode that a polarity current potential is applied to first semiconductor Laser device from first power supply time, from second source the opposite polarity current potential is applied on the electrode of first semiconductor Laser device, thereby the voltage higher than the starting of oscillation voltage of first semiconductor Laser device is applied on first semiconductor Laser device.
Like this, even electro-optical device under the situation of the semicondcutor laser unit with the different a plurality of semiconductor Laser devices of oscillation wavelength, uses the power circuit that generates low-voltage, also can drive short wavelength's first semiconductor Laser device.
First semiconductor Laser device has the first starting of oscillation voltage, and it is also passable that second semiconductor Laser device has the second starting of oscillation voltage lower than first semiconductor Laser device.
In this case, by connecting the power circuit that produces positive potential on the electrode of first semiconductor Laser device, connect the power circuit that produces negative potential on another electrode of first semiconductor Laser device, on first semiconductor Laser device, can apply than the high voltage of the first starting of oscillation voltage.By on second semiconductor Laser device, connecting the power circuit that produces positive potential, on second semiconductor Laser device, can apply in addition than the high voltage of the second starting of oscillation voltage.
Like this, even electro-optical device under the situation that is provided with the semicondcutor laser unit with the different a plurality of semiconductor Laser devices of starting of oscillation voltage, uses the power circuit that generates low-voltage, also can drive short wavelength's first semiconductor Laser device.
In addition, because first semiconductor Laser device and component insulation, the parasitic capacitance that causes because of assembly reduces, and can make the first semiconductor Laser device high speed motion.
An electrode of second semiconductor Laser device also can be connected with electrical component.
In this case, because an electrode of second semiconductor Laser device is electrically connected with assembly, so there is no need to connect the distribution that is used for an electrode grounding of second semiconductor Laser device.
First semiconductor Laser device also can be made of the semi-conductive material of nitrogenate.In this case, first semiconductor Laser device that is made of the semi-conductive material of nitrogenate can penetrate the short bluish violet color laser of wavelength ratio second wavelength.Its utilization as a result has the bluish violet color laser of small spot diameter, can realize the densification and the high capacity of optical disk system.
The electro-optical device of the 3rd invention has semicondcutor laser unit, first power supply, second source, and semicondcutor laser unit comprises having an electrode and another electrode, has first semiconductor Laser device of the first starting of oscillation voltage; Have an electrode and another electrode, have second semiconductor Laser device of the second starting of oscillation voltage lower than first semiconductor Laser device; With the conductivity assembly that first and second semiconductor Laser devices are housed, electrode of first semiconductor Laser device and another electrode and component insulation, with first power drives, second semiconductor Laser device, a polarity current potential another electrode, give an electrode of first semiconductor Laser device with first power supply simultaneously with the current potential of a second source handle and a polarity opposite polarity to first semiconductor Laser device.
In the electro-optical device of the 3rd invention, have semicondcutor laser unit, first power supply and second source.Wherein, the starting of oscillation voltage height of starting of oscillation voltage ratio second semiconductor Laser device of first semiconductor Laser device.With first power drives, second semiconductor Laser device.A polarity current potential another electrode, give an electrode of first semiconductor Laser device with first power supply simultaneously with the current potential of a second source handle and a polarity opposite polarity to first semiconductor Laser device.
Wherein, penetrate the starting of oscillation voltage height of short first wavelength light, first semiconductor Laser device than second semiconductor Laser device that penetrates the second long wavelength light.In this case, from first power supply voltage higher than starting of oscillation voltage is applied on second semiconductor Laser device.A polarity current potential is applied on another electrode of first semiconductor Laser device from first power supply in addition, by the opposite polarity current potential being applied on the electrode of first semiconductor Laser device, can the voltage higher than the starting of oscillation voltage of first semiconductor Laser device be applied on first semiconductor Laser device simultaneously from second source.
Even electro-optical device is under the situation that is provided with the semicondcutor laser unit with the different a plurality of semiconductor Laser devices of oscillation wavelength like this, use the power circuit that produces low-voltage, also can drive short wavelength's first semiconductor Laser device.
The effect of invention
According to the present invention, even under situation, use the power circuit that produces low-voltage with the different a plurality of semiconductor Laser devices of oscillation wavelength, also can drive the semiconductor Laser device of the light that penetrates the short wavelength.
Description of drawings
Fig. 1 is the stereoscopic figure of the semicondcutor laser unit of expression first execution mode.
Fig. 2 is the front view that schematically shows the state after the lid of the semicondcutor laser unit of Fig. 1 removed.
Fig. 3 is the vertical view that schematically shows the state after the lid of the semicondcutor laser unit of Fig. 1 removed.
Fig. 4 is the circuit diagram of the electric wiring of expression semicondcutor laser unit.
Fig. 5 is the circuit diagram of the electric wiring of the electro-optical device of the semicondcutor laser unit of expression use Fig. 4.
Fig. 6 is the schematic sectional view that is used to describe in detail bluish violet semiconductor Laser device structure.
Fig. 7 is the schematic sectional view that is used to describe in detail red semiconductor laser diode structure.
Fig. 8 is used for the semicondcutor laser unit of first execution mode key diagram of the optical disk system of an example of electro-optical device with the pick-up state for expression.
Fig. 9 is the stereoscopic figure of the semicondcutor laser unit of expression second execution mode.
Figure 10 is that the lid that schematically shows the semicondcutor laser unit of Fig. 9 is removed the front view of state afterwards.
Figure 11 schematically shows the vertical view of the lid of the semicondcutor laser unit of Fig. 9 being removed the back state.
Figure 12 is the circuit diagram of the electric wiring of expression semicondcutor laser unit.
Figure 13 is the circuit diagram of the electric wiring of the electro-optical device of the semicondcutor laser unit of expression use Figure 12.
Figure 14 is the stereoscopic figure of the semicondcutor laser unit of expression the 3rd execution mode.
Figure 15 is that the lid that schematically shows the semicondcutor laser unit of Figure 14 is removed the front view of state afterwards.
Figure 16 schematically shows the vertical view of the lid of the semicondcutor laser unit of Figure 14 being removed the back state.
Figure 17 is the circuit diagram of the electric wiring of expression semicondcutor laser unit.
Figure 18 is the circuit diagram of the electric wiring of the electro-optical device of the semicondcutor laser unit of expression use Figure 17.
Figure 19 is the stereoscopic figure of the semicondcutor laser unit of expression the 4th execution mode.
Figure 20 is that the lid that schematically shows the semicondcutor laser unit of Figure 19 is removed the front view of state afterwards.
Figure 21 schematically shows the vertical view of the lid of the semicondcutor laser unit of Figure 19 being removed the back state.
Figure 22 is the circuit diagram of the electric wiring of expression semicondcutor laser unit.
Figure 23 is the stereoscopic figure of the semicondcutor laser unit of expression the 5th execution mode.
Figure 24 is that the lid that schematically shows the semicondcutor laser unit of Figure 23 is removed the front view of state afterwards.
Figure 25 schematically shows the vertical view of the lid of the semicondcutor laser unit of Figure 23 being removed the back state.
Figure 26 is the circuit diagram of the electric wiring of expression semicondcutor laser unit.
Figure 27 is the circuit diagram of the electric wiring of the electro-optical device of the semicondcutor laser unit of expression use Figure 26.
Figure 28 is the schematic sectional view that is used to illustrate the detailed structure of infrared semiconductor laser element.
Figure 29 is the illustrative diagram of expression patent documentation 1 described semicondcutor laser unit.
Figure 30 is the circuit diagram of the semicondcutor laser unit of Figure 26.
Label declaration: 11 first semiconductor Laser devices, 12 second semiconductor Laser devices, 11b, 12b p side liner electrode (pad electrode), 11c, 12c n lateral electrode, 19 module body, 501 drive circuits, 502 DC power supply.
Embodiment
Semicondcutor laser unit and electro-optical device to embodiments of the present invention describes below.
(first execution mode)
Fig. 1 is the stereoscopic figure of the semicondcutor laser unit of expression first execution mode.
As shown in Figure 1, semicondcutor laser unit 500 by the module body 19 of conductivity, power pin 21a～21c, 24 and lid 25 constitute.
A plurality of semiconductor Laser devices of narrating later are housed in module body 19.Semiconductor Laser device in the module body of packing into 19 is sealed with lid 25.On lid 25, be provided with and take out window 25a.Taking out window 25a is made of the material that sees through laser.In addition, power pin 24 is as narrating later, carry out machinery with module body 19 with being connected of electricity.
Below the details in the module body 19 is described.Following handle penetrates laser direction from semiconductor Laser device and describes as the front.
Fig. 2 is the front view that schematically shows the state after the lid 25 of the semicondcutor laser unit 500 of Fig. 1 removed, and Fig. 3 is the vertical view that schematically shows the state after the lid 25 of the semicondcutor laser unit 500 of Fig. 1 removed.
As shown in Figure 2, forming on the conductivity support substrate 17 of one, form the welding layer 18 of conductivity with module body 19.Conductivity welding layer 18 is made of AuSn (golden tin).On conductivity welding layer 18, form the auxiliary substrate 15 that constitutes by insulating material.On auxiliary substrate 15, form metal level 16a, 16b.Between metal level 16a, 16b,, gap 16c carries out electric insulation by being set.
On metal level 16a, form welding layer 13, on metal level 16b, form welding layer 14. Welding layer 13,14 AuSn by conductivity (golden tin) constitute.Bonding first semiconductor Laser device 11 on welding layer 13, bonding second semiconductor Laser device 12 on welding layer 14.
Wherein, first semiconductor Laser device 11 has pad electrode (below be called p side liner electrode) 11b, n type GaN (gallium nitride) the substrate 11a of p side and the structure of n lateral electrode 11c sequential cascade.The p side liner electrode 11b of first semiconductor Laser device 11 is electrically connected with metal level 16a.First semiconductor Laser device 11 in the first embodiment contains the GaN based semiconductor layer that forms on n type GaN substrate 11a in addition, has the wavelength (oscillation wavelength) of about 400nm.Narrate in the back about GaN based semiconductor layer.
On the other hand, second semiconductor Laser device 12 has pad electrode (below be called p side liner electrode) 12b, n type GaAs (gallium arsenic) the substrate 12a of p side and the structure of n lateral electrode 12c sequential cascade.P side liner electrode 12b is electrically connected with metal level 16b.Second semiconductor Laser device 12 in the first embodiment contains AlGaInP (AlGaInP) the based semiconductor layer that forms on n type GaAs substrate 12a in addition, has the wavelength (oscillation wavelength) of about 660nm.Narrate in the back about AlGaInP based semiconductor layer.
First semiconductor Laser device 11 is set at and is positioned at the central part that takes out window 25a (with reference to Fig. 1) than second semiconductor Laser device, 12 more close lids 25.Configuration details about first semiconductor Laser device 11 is narrated in the back.
As shown in Figures 2 and 3, metal level 16a is electrically connected with power pin 21b with lead 22b.This power pin 21b carries out electric insulation with dead ring 20b and module body 19.Metal level 16b is electrically connected with power pin 21c with lead 22c.This power pin 21c carries out electric insulation with dead ring 20c and module body 19.
The n lateral electrode 11c of first semiconductor Laser device 11 is electrically connected with power pin 21a with lead 22a.This power pin 21a carries out electric insulation with dead ring 20a and module body 19.The n lateral electrode 12c of second semiconductor Laser device 12 is electrically connected with support substrate 17 with lead 23.Like this, become can be from being connected the structure of power pin 24 power supply on the module body 19 for the n lateral electrode 12c of second semiconductor Laser device 12.This outer conductor 22a～22c, 23 is made of Au (gold).
Fig. 4 is the circuit diagram of the electric wiring of expression semicondcutor laser unit 500.
As shown in Figure 4, the p side liner electrode 11b of first semiconductor Laser device 11 and n lateral electrode 11c and module body 19 are carried out electric insulation.The p side liner electrode 11b of first semiconductor Laser device 11 is connected on the power pin 21b, and n lateral electrode 11c is connected on the power pin 21a.
On the other hand, the p side liner electrode 12b of second semiconductor Laser device 12 is electrically connected with power pin 21c, and n lateral electrode 12c is electrically connected with module body 19.
Fig. 5 is the circuit diagram of the electric wiring of the electro-optical device of the semicondcutor laser unit 500 of expression use Fig. 4.
As shown in Figure 5, electro-optical device has semicondcutor laser unit 500, drive circuit 501, DC power supply 502 and switch 503.
In the drive circuit 501 of Fig. 5, the DC power supply (not expression among the figure) that produces direct voltage V is equipped with in inside.This direct voltage V is than the starting of oscillation voltage height of second semiconductor Laser device 12.Direct voltage-the Va of (opposite polarity) is born in DC power supply 502 outputs in addition.The anode terminal 501a of drive circuit 501 is connected on the terminal 503a of switch 503.The terminal 503b of switch 503 is connected on the power pin 21c of semicondcutor laser unit 500, and terminal 503c is connected on the power pin 21b of semicondcutor laser unit 500.
The cathode terminal 501b of drive circuit 501 is connected on the node a.Node a is connected anode one side of DC power supply 502, is connected simultaneously on the power pin 24 and module body 19 of semicondcutor laser unit 500.In addition, node a ground connection (0V).Negative electrode one side of DC power supply 502 is connected on the power pin 21a of semicondcutor laser unit 500.
On the other hand, switch 503 is switched on the terminal 503c, thus, direct voltage V is applied on the p side liner electrode 11b of first semiconductor Laser device 11 with the DC power supply in the interior plant drive circuit 501, simultaneously, the negative direct voltage-Va of DC power supply 502 is applied on the n lateral electrode 11c of first semiconductor Laser device 11.Like this, in first semiconductor Laser device 11, the direct voltage of drive circuit 501 is applied on first semiconductor Laser device 11 with the total voltage V+Va of the direct voltage of the DC power supply of bearing 502.Such first semiconductor Laser device 11 can penetrate bluish violet color laser.
For example, at the starting of oscillation voltage of first semiconductor Laser device 11 is that the starting of oscillation voltage of 4～6V, second semiconductor Laser device 12 is under the situation of 2～2.5V, preferably direct voltage V is set at 2～2.5V, negative direct voltage-Va is set at-2～-3V.
Concrete structure to first semiconductor Laser device 11 and second semiconductor Laser device 12 describes below.In the first embodiment, first semiconductor Laser device 11 is the semiconductor Laser device that penetrates bluish violet color laser (below be called the bluish violet semiconductor Laser device), and second semiconductor Laser device 12 is the semiconductor Laser device that penetrates red laser (below be called the red semiconductor laser diode).
Fig. 6 is the schematic sectional view that is used to describe in detail bluish violet semiconductor Laser device 11 structures.In Fig. 6 orthogonal 3 directions of representing with arrow X, Y, Z as directions X, Y direction and Z direction.Directions X and Y direction are the direction that is parallel to the pn composition surface of bluish violet semiconductor Laser device 11.
In bluish violet semiconductor Laser device 11, on the n lateral electrode 11c that constitutes by Ti/Pt/Au, form n type GaN substrate 11a, on n type GaN substrate 11a, form GaN semiconductor layer with stepped construction.
Shown in Fig. 6 (a), on n type GaN substrate 11a, form n-GaN layer 101, n-AlGaN cover layer 102, n-GaN light guide layer 103, MQW (multiple quantum trap) active layer 104, not doped with Al GaN cap layer 105, not Doped GaN light guide layer 106, p-AlGaN cover layer 107 and the GaInN contact layer 108 that do not mix in proper order as GaN based semiconductor layer.The formation of these each layers for example can be carried out with mocvd method (Metalorganic chemical vapor deposition method).
Shown in Fig. 6 (b), MQW active layer 104 has 4 do not mix GaInN barrier layer 104a and 3 GaInN trap layer 104b stacked structures mutually of not mixing.
Shown in Fig. 6 (a), for example the Al of n-AlGaN cover layer 102 consists of 0.15, and Ga consists of 0.85.Si mixes in n-GaN layer 101, n-AlGaN cover layer 102, n-GaN light guide layer 103.
The Ga of the GaInN barrier layer of not mixing in addition 104a consists of 0.95, and In consists of 0.05.The Ga of GaInN trap layer 104b of not mixing consists of 0.90, and In consists of 0.10.The Al of p-AlGaN cap layer 105 consists of 0.30, and Ga consists of 0.70.
The Al of p-AlGaN cover layer 107 consists of 0.15 in addition, and Ga consists of 0.85.Doped with Mg in p-AlGaN cover layer 107.The Ga of GaInN contact layer 108 of not mixing consists of 0.95, and In consists of 0.05.
In p-AlGaN cover layer 107, form along the bump Ri of the tape shape of directions X extension.Bump Ri width in the p-AlGaN cover layer 107 has 1.5 μ m approximately.
The formation above the bump Ri of GaInN contact layer 108 in p-AlGaN cover layer 107 of not mixing.
At p-AlGaN cover layer 107 with do not mix above the GaInN contact layer 108 and to form by SiO
2The dielectric film 109 that constitutes, the dielectric film 109 usefulness etchings that form above the GaInN contact layer 108 are not removed mixing.On the GaInN contact layer 108 that do not mix that is exposed, form the p electrode 110 that constitutes by Pd/Pt/Au then.Form p side liner electrode 11b with sputtering method, vacuum vapour deposition or electron beam evaporation plating method again, above covering p electrode 110.
Like this, on the one side of n type GaN substrate 11a, form GaN based semiconductor layer with stepped construction.
In this bluish violet semiconductor Laser device 11, form the bluish violet luminous point on the position of the MQW active layer 104 below bump Ri.
Fig. 7 is the schematic sectional view that is used to describe in detail red semiconductor laser diode 12 structures.Also identical in Fig. 7 with Fig. 6, set directions X, Y direction and Z direction.
In the present embodiment, red semiconductor laser diode 12 forms n type GaAs substrate 12a on the n lateral electrode 12c that is made of AuGe/Ni/Au, forms AlGaInP based semiconductor layer on n type GaAs substrate 12a.Si mixes in this n type GaAs substrate 12a.
Shown in Fig. 7 (a), on n type GaAs substrate 12a, as the semiconductor layer with stepped construction, order forms n-GaAs layer 201, n-AlGaInP cover layer 202, not doped with Al GaInP light guide layer 203, MQW (multiple quantum trap) active layer 204, not doped with Al GaInP light guide layer 205, p-AlGaInP first cover layer 206, p-InGaP etch stop layer 207, p-AlGaInP second cover layer 208 and p-GaInP contact layer 209.The formation of these each layers for example can be carried out with mocvd method (Metalorganic chemical vapor deposition method).
Shown in Fig. 7 (b), MQW active layer 204 has 2 not doped with Al GaInP barrier layer 204a and 3 InGaP trap layer 204b stacked structures mutually of not mixing.
Shown in Fig. 7 (a), for example the Al of n-AlGaInP cover layer 202 consists of 0.70, and Ga consists of 0.30, and In consists of 0.50, and P consists of 0.50.Si mixes in n-GaAs layer 201 and n-AlGaInP cover layer 202.
The Al of doped with Al GaInP light guide layer 203 does not consist of 0.50, and Ga consists of 0.50, and In consists of 0.50, and P consists of 0.50.
The Al of doped with Al GaInP barrier layer 204a does not consist of 0.50 in addition, and Ga consists of 0.50, and In consists of 0.50, and P consists of 0.50.The In of InGaP trap layer 204b of not mixing consists of 0.50, and Ga consists of 0.50.The Al of doped with Al InGaP light guide layer 205 does not consist of 0.50, and Ga consists of 0.50, and In consists of 0.50, and P consists of 0.50.
The Al of p-AlGaInP first cover layer 206 consists of 0.70 in addition, and Ga consists of 0.30, and In consists of 0.50, and P consists of 0.50.The In of p-InGaP etch stop layer 207 consists of 0.50, and Ga consists of 0.50.
The composition of above-mentioned AlGaInP based material general formula (Al
aGa
b)
0.5In
cP
dA during expression is the composition of Al, and b is the composition of Ga, and c is the composition of In, and d is the composition of P.
The Al of p-AlGaInP second cover layer 208 consists of 0.70, and Ga consists of 0.30, and In consists of 0.50, and P consists of 0.50.P-contact layer 209 has the stepped construction of p-GaInP layer and p-GaAs layer.The Ga of this p-GaInP consists of 0.50, and In consists of 0.50.
Doping of Zn in the p-GaInPp-GaAs of p-AlGaInP first cover layer 206, p-InGaP etch stop layer 207, p-AlGaInP second cover layer 208 and p-contact layer 209.
In above-mentioned, only on a part (middle body) p-InGaP etch stop layer 207, carry out to forming p-AlGaInP second cover layer 208 on the p-InGaP etch stop layer 207.Then, on p-AlGaInP second cover layer 208, form p-contact layer 209.
In AlGaInP based semiconductor layer, utilize p-AlGaInP second cover layer 208 and p-contact layer 209 like this, form along the bump Ri of the tape shape of directions X extension.The bump Ri width that is made of p-AlGaInP second cover layer 208 and p-contact layer 209 has 2.5 μ m approximately.
On p-InGaP etch stop layer 207, the side of p-AlGaInP second cover layer 208 and p-contact layer 209 above and the side form by SiO
2The dielectric film 210 that constitutes, the dielectric film 210 usefulness etchings that form on p-contact layer 209 are removed.On the p-contact layer 209 that is exposed, form the p electrode 211 that constitutes by Cr/Au then.Form p side liner electrode 12b with sputtering method, vacuum vapour deposition or electron beam evaporation plating method again, above covering p electrode 211.
On the one side of n type GaAs substrate 12a, form AlGaInP based semiconductor layer like this with stepped construction.
On this red semiconductor laser diode 12, on the position of the MQW active layer 204 below the bump Ri, form the emitting red light point.
Below the method that reduces first semiconductor Laser device, 11 aberration effects is described.
Fig. 8 is used for the semicondcutor laser unit 500 of first execution mode key diagram of the optical disk system of an example of electro-optical device with the pick-up state for expression.
As shown in Figure 8, bluish violet color laser that penetrates from first semiconductor Laser device 11 of semicondcutor laser unit 500 and the red laser that penetrates from second semiconductor Laser device 12 see through coupled lens 402, beam splitter 403 and object lens 404, and optically focused is on the CD 405 of object.
The bluish violet color laser that penetrates with first semiconductor Laser device 11 sees through the cardinal principle central part of coupled lens 402 and object lens 404 in this case.Like this owing to can reduce the influence of the aberration (mainly being spherical aberration) that causes by lens to greatest extent, so the utilance of light improve, simultaneously bluish violet color laser with form optically focused with smallest spot diameter on CD 405.CD can high density recording and reproduction as a result for it.
On the other hand, the red laser that is penetrated by second semiconductor Laser device 12 sees through the periphery of coupled lens 402 and object lens 404.Like this, be subjected to the influence of the aberration that causes by lens, but, manifest the influence that aberration causes hardly because spot diameter is big.
As mentioned above, the semicondcutor laser unit 500 of first execution mode is by being connected the drive circuit 501 that produces positive potential on the p side liner electrode 11b of first semiconductor Laser device 11, the DC power supply 502 that produces negative potential is connected on the n lateral electrode 11c of first semiconductor Laser device 11, can the high voltage of starting of oscillation voltage than first semiconductor Laser device 11 be applied on first semiconductor Laser device 11.Like this, by switching, can drive different first semiconductor Laser device 11 and second semiconductor Laser devices 12 of oscillation wavelength with the drive circuit 501 that produces low-voltage with switch 503.
In addition, because first semiconductor Laser device 11 and module body 19 insulation, the parasitic capacitance that causes because of module body 19 reduces, and can make first semiconductor Laser device, 11 high speed motion.On the other hand, because the n lateral electrode 12c of second semiconductor Laser device 12 is electrically connected with module body 19, so needn't connect the distribution that is used for the n lateral electrode 12c ground connection of second semiconductor Laser device 12.
First semiconductor Laser device 11 that is made of the semi-conductive material of nitrogenate can penetrate oscillation wavelength than the short bluish violet color laser of red laser that penetrates from second semiconductor Laser device 12.Pass through centre in addition with the central part positioning component main body 19 of coupled lens 402, beam splitter 403 and object lens 404, behind the centre of bluish violet color laser by coupled lens 402 and object lens 404 that first semiconductor Laser device 11 of comparing wave of oscillation length with second semiconductor Laser device 12 penetrates, optically focused is to object.Its result has reduced the influence of the aberration (mainly being spherical aberration) that causes because of coupled lens 402 and object lens 404, makes the optically focused of small luminous point become possibility.Its result utilizes the bluish violet color laser with small spot diameter, can realize the densification and the high capacity of optical disk system.
In the stepped construction of this external first semiconductor Laser device 11 and second semiconductor Laser device 12, the MQW active layer 104,204 that produces the heat position and bump Ri are comparing with n lateral electrode 11c, 12c near more close p side liner electrode 11b, the 12b.Therefore by p side liner electrode 11b, 12b being bonded in metal level 16a, 16b one side on the auxiliary substrate 15, the heat that generates from generation heat position, can be dispelled the heat through high metal level 16a, 16b and the auxiliary substrate 15 of conductive coefficient expeditiously from p side liner electrode 11b, 12b.
(second execution mode)
Semicondcutor laser unit and electro-optical device to second execution mode describes below.The difference of the semicondcutor laser unit of the semicondcutor laser unit of second execution mode and first execution mode is as follows.
Fig. 9 is the stereoscopic figure of the semicondcutor laser unit of expression second execution mode.
Below the details in the module body 19 of the semicondcutor laser unit 510 of second execution mode are described.Following handle penetrates laser direction from semiconductor Laser device and describes as the front.
Figure 10 is that the lid 25 that schematically shows the semicondcutor laser unit 510 of Fig. 9 is removed the front view of state afterwards, and Figure 11 schematically shows the vertical view of the lid 25 of the semicondcutor laser unit 510 of Fig. 9 being removed the back state.
On the auxiliary substrate 15 of the semicondcutor laser unit 510 that Figure 10 represents, form metal level 16, substitute metal level 16a, 16b and the gap 16c of semicondcutor laser unit shown in Figure 2 500.
In this external semicondcutor laser unit shown in Figure 10 510, have dead ring 20b, 20c, power pin 21b, 21c, 24 and lead 22b, 22c, 23, substitute dead ring 20a～20c, the power pin 21a～21c, 24 and lead 22a～22c, 23 of semicondcutor laser unit 500 shown in Figure 2.
As shown in Figure 10 and Figure 11, in the semicondcutor laser unit 510 of second execution mode, metal level 16 is electrically connected with power pin 21c by lead 22c.This power pin 21c utilizes dead ring 20c and module body 19 to carry out electric insulation.
The n lateral electrode 11c of first semiconductor Laser device 11 is electrically connected with power pin 21b by lead 22b.This power pin 21b utilizes dead ring 20b and module body 19 to carry out electric insulation.The n lateral electrode 12c of second semiconductor Laser device 12 is electrically connected with support substrate 17 by lead 23.Can become the structure of powering to the n lateral electrode 12c of second semiconductor Laser device 12 like this from the power pin 24 that is connected on the module body 19.This outer conductor 22b, 22c, 23 are made of gold (Au).The structure of the structure of first semiconductor Laser device 11 and second semiconductor Laser device 12 and Fig. 6 and first semiconductor Laser device 11 shown in Figure 7 and second semiconductor Laser device 12 is identical in addition.
Figure 12 is the circuit diagram of the electric wiring of expression semicondcutor laser unit 510.
As shown in figure 12, the p side liner electrode 12b of the p side liner electrode 11b of first semiconductor Laser device 11 and second semiconductor Laser device 12 utilizes metal level 16 to be electrically connected.Metal level 16 is connected on the power pin 21c.The n lateral electrode 11c of first semiconductor Laser device 11 and module body 19 are carried out electric insulation.The n lateral electrode 11c of first semiconductor Laser device 11 is connected on the power pin 21b.The n lateral electrode 12c of second semiconductor Laser device 12 is electrically connected with module body 19.
Figure 13 is the circuit diagram of the electric wiring of the electro-optical device of the semicondcutor laser unit 510 of expression use Figure 12.
As shown in figure 13, electro-optical device has semicondcutor laser unit 510, drive circuit 501, DC power supply 502 and switch 504.
In the drive circuit 501 of Figure 13, the DC power supply (not expression among the figure) that produces direct voltage V is equipped with in inside.This direct voltage V is than the starting of oscillation voltage height of second semiconductor Laser device 12.Direct voltage-the Va of (opposite polarity) is born in DC power supply 502 outputs in addition.The anode terminal 501a of drive circuit 501 is connected on the power pin 21c of semicondcutor laser unit 510.The cathode terminal 501b of drive circuit 501 is connected on the node b.When node b is connected on the terminal 504a of switch 504, be connected on the power pin 24 and module body 19 of semicondcutor laser unit 510.This external nodal point b ground connection (0V).
Anode one side of DC power supply 502 is connected on the terminal 504b of switch 504.Negative electrode one side of DC power supply 502 is connected on the power pin 21b of semicondcutor laser unit 510.
By cut-off switch 504, utilize the DC power supply that is contained in the drive circuit 501, direct voltage V is applied on second semiconductor Laser device 12.Such second semiconductor Laser device 12 can penetrate red laser.
On the other hand by opening switch 504, utilization is contained in the DC power supply in the drive circuit 501, direct voltage V is applied on the p side liner electrode 11b of first semiconductor Laser device 11, on the n side liner electrode 11c of first semiconductor Laser device 11, applies the negative direct voltage-Va of DC power supply 502 simultaneously.In first semiconductor Laser device 11, the direct voltage of drive circuit 501 is applied on first semiconductor Laser device 11 with the total voltage V+Va of the direct voltage of the DC power supply of bearing 502 like this.Such first semiconductor Laser device 11 can penetrate bluish violet color laser.
Be that the starting of oscillation voltage of 4～6V, second semiconductor Laser device 12 is under the situation of 2～2.5V for example at the starting of oscillation voltage of first semiconductor Laser device 11, preferably direct voltage is set at 2～2.5V, negative direct voltage-Va is set at-3～-4V.
In addition in this case, the difference of the absolute value of the voltage that provides to first semiconductor Laser device 11 and negative direct voltage-Va can drive first semiconductor Laser device 11 in electric current begin the to flow through following scope of voltage (about 1.7V) of second semiconductor Laser device 12.In this case, second semiconductor Laser device 12 does not penetrate laser.
Utilize above-mentioned method, in the semicondcutor laser unit 510 and electro-optical device of second execution mode, compare, can cut down the radical of power pin with the semicondcutor laser unit 500 of first execution mode.
Use the drive circuit 501 of second semiconductor Laser device 12 that can drive low starting of oscillation voltage in addition, utilize diverter switch 504, can drive first semiconductor Laser device 11 of high starting of oscillation voltage.
(the 3rd execution mode)
Semicondcutor laser unit and electro-optical device to the 3rd execution mode describes below.The difference of the semicondcutor laser unit of the semicondcutor laser unit of the 3rd execution mode and first execution mode is as follows.
Figure 14 is the stereoscopic figure of the semicondcutor laser unit of expression the 3rd execution mode.
Below the details in the module body 19 of the semicondcutor laser unit 520 of the 3rd execution mode are described.Following handle penetrates laser direction from semiconductor Laser device and describes as the front.
Figure 15 is that the lid 25 that schematically shows the semicondcutor laser unit 520 of Figure 14 is removed the front view of state afterwards, and Figure 16 schematically shows the vertical view of the lid 25 of the semicondcutor laser unit 520 of Figure 14 being removed the back state.
In semicondcutor laser unit shown in Figure 15 520, have dead ring 20b, 20c, power pin 21b, 21c, 24 and lead 22b, 22c, 23,26, substitute dead ring 20a～20c, the power pin 21a～21c, 24 and lead 22a～22c, 23 of semicondcutor laser unit 500 shown in Figure 2.
As Figure 15 and shown in Figure 16, in the semicondcutor laser unit 520 of the 3rd execution mode, metal level 16a is electrically connected with power pin 21b by lead 22b.This power pin 21b utilizes dead ring 20b and module body 19 to carry out electric insulation.Metal level 16b is electrically connected with power pin 21c by lead 22c.This power pin 21c utilizes dead ring 20c and module body 19 to carry out electric insulation.Metal level 16b is electrically connected with the n lateral electrode 11c of first semiconductor Laser device 11 by lead 26 in addition.The n lateral electrode 12c of second semiconductor Laser device 12 is electrically connected with support substrate 17 by lead 23.Can become the structure of powering to the n lateral electrode 12c of second semiconductor Laser device 12 like this from the power pin 24 that is connected on the module body 19.This outer conductor 22b, 22c, 23,26 are made of gold (Au).The structure of the structure of first semiconductor Laser device 11 and second semiconductor Laser device 12 and Fig. 6 and first semiconductor Laser device 11 shown in Figure 7 and second semiconductor Laser device 12 is identical in addition.
Figure 17 is the circuit diagram of the electric wiring of expression semicondcutor laser unit 520.
As shown in figure 17, the p side liner electrode 12b of the n side liner electrode 11c of first semiconductor Laser device 11 and second semiconductor Laser device 12 utilizes metal level 16b to be electrically connected.Metal level 16b is connected on the power pin 21c.
The p side liner electrode 11b of first semiconductor Laser device 11 and n lateral electrode 11c and module body 19 are carried out electric insulation.The p side liner electrode 11b of first semiconductor Laser device 11 is connected on the power pin 21b.N lateral electrode 11c is connected on the power pin 21c.
The p side liner electrode 12b of second semiconductor Laser device 12 is electrically connected with metal level 16b on the other hand, and n lateral electrode 12c is electrically connected with module body 19.
Figure 18 is the circuit diagram of the electric wiring of the electro-optical device of the semicondcutor laser unit 520 of expression use Figure 17.
As shown in figure 18, electro-optical device has semicondcutor laser unit 520, drive circuit 501, DC power supply 502 and switch 505,506.
In the drive circuit 501 of Figure 18, the DC power supply (not expression among the figure) that produces direct voltage V is equipped with in inside.This direct voltage V is than the starting of oscillation voltage height of second semiconductor Laser device 12.Direct voltage-the Va of (opposite polarity) is born in DC power supply 502 outputs in addition.The anode terminal 501a of drive circuit 501 is connected on the node c.When node c is connected on the terminal 505a of switch 505, be connected on the power pin 21b of semicondcutor laser unit 520.
The cathode terminal 501b of drive circuit 501 is connected on the node d.When node d is connected on the terminal 506b of switch 506, be connected on the power pin 24 and module body 19 of semicondcutor laser unit 520.This external nodal point d ground connection (0V).
The power pin 21c of semicondcutor laser unit 520 is connected on the terminal 505b of switch 505, is connected negative electrode one side of DC power supply 502 simultaneously.Anode one side of DC power supply 502 is connected on the terminal 506a of switch 506.
By cut-off switch 506 when opening switch 505, utilize the DC power supply that is contained in the drive circuit 501 that direct voltage V is applied on second semiconductor Laser device 12.Such second semiconductor Laser device 12 can penetrate red laser.
On the other hand, open switch 506 in the time of by cut-off switch 505, the DC power supply that utilization is contained in drive circuit 501 is applied to direct voltage V on the p side liner electrode 11b of first semiconductor Laser device 11, simultaneously the negative direct voltage-Va of DC power supply 502 is applied on the n lateral electrode 11c of first semiconductor Laser device 11.In first semiconductor Laser device 11, the direct voltage of drive circuit 501 is applied on first semiconductor Laser device 11 with the total voltage V+Va of the direct voltage of the DC power supply of bearing 502 like this.Such first semiconductor Laser device 11 can penetrate bluish violet color laser.
For example the starting of oscillation voltage at first semiconductor Laser device 11 is 4～6V, and the starting of oscillation voltage of second semiconductor Laser device 12 is under the situation of 2～2.5V, preferably direct voltage is set at 2～2.5V, negative direct voltage is set at-2～-3V.
Utilize above-mentioned method, in the semicondcutor laser unit 520 of the 3rd execution mode, when driving first semiconductor Laser device 11, in the scope of the rightabout disintegration voltage that is no more than second semiconductor Laser device 12, the voltage of opposite polarity is applied on second semiconductor Laser device 12.Therefore when driving first semiconductor Laser device 11, there is no need voltage adjustment, can carry out the driving of first semiconductor Laser device 11 fully independently second semiconductor Laser device 12.
The semicondcutor laser unit 520 of the 3rd execution mode is compared with the semicondcutor laser unit 500 of first execution mode in addition, can cut down the radical of power pin.
The semicondcutor laser unit 520 of the 3rd execution mode uses the drive circuit 501 of second semiconductor Laser device 12 that can drive low starting of oscillation voltage in addition, utilize diverter switch 505,506, can drive first semiconductor Laser device 11 of high starting of oscillation voltage.
(the 4th execution mode)
Semicondcutor laser unit and electro-optical device to the 4th execution mode describes below.The difference of the semicondcutor laser unit of the semicondcutor laser unit of the 4th execution mode and first execution mode is as follows.
Figure 19 is the stereoscopic figure of the semicondcutor laser unit of expression the 4th execution mode.
Below the details in the module body 19 of the semicondcutor laser unit 530 of the 4th execution mode are described.Following handle penetrates laser direction from semiconductor Laser device and describes as the front.
Figure 20 is that the lid 25 that schematically shows the semicondcutor laser unit 530 of Figure 19 is removed the front view of state afterwards, and Figure 21 schematically shows the vertical view of the lid 25 of the semicondcutor laser unit 530 of Figure 19 being removed the back state.
In semicondcutor laser unit shown in Figure 20 530, have lead 22b, 22c, 23,26,28, substitute the lead 22a～22c, 23 of semicondcutor laser unit 500 shown in Figure 2.
As Figure 20 and shown in Figure 21, in the semicondcutor laser unit 530 of the 4th execution mode, metal level 16a is electrically connected with power pin 21b by lead 22b.This power pin 21b utilizes dead ring 20b and module body 19 to carry out electric insulation.Metal level 16b is electrically connected with power pin 21c by lead 22c.This power pin 21c utilizes dead ring 20c and module body 19 to carry out electric insulation.Metal level 16b is electrically connected with the n lateral electrode 11c of first semiconductor Laser device 11 by lead 26 in addition.
The n lateral electrode 12c of second semiconductor Laser device 12 is electrically connected with support substrate 17 by lead 23.Can become the structure of powering to the n lateral electrode 12c of second semiconductor Laser device 12 like this from the power pin 24 that is connected on the module body 19.
The p lateral electrode 27a of photodiode 27 is electrically connected with power pin 21a by lead 28 in addition.Power pin 21a utilizes dead ring 20a and module body 19 to carry out electric insulation.The n lateral electrode of photodiode 27 mechanically is bonded on the module body 19 on the other hand, is electrically connected simultaneously.This outer conductor 22b, 22c, 23,26,28 are made of gold (Au).The structure of the structure of first semiconductor Laser device 11 and second semiconductor Laser device 12 and Fig. 6 and first semiconductor Laser device 11 shown in Figure 7 and second semiconductor Laser device 12 is identical in addition.
Figure 22 is the circuit diagram of the electric wiring of expression semicondcutor laser unit 530.
The circuit of semicondcutor laser unit 530 shown in Figure 22 is the circuit diagrams that increased photodiode 27 in the circuit of semicondcutor laser unit shown in Figure 17 520.Below the semicondcutor laser unit 530 of Figure 22 difference with the semicondcutor laser unit 520 of Figure 17 is described.
The p lateral electrode 27a of the photodiode 27 of semicondcutor laser unit 530 shown in Figure 22 is connected on the power pin 21a.The n lateral electrode of photodiode 27 is connected on the module body 19 on the other hand.
Because of above-mentioned situation, owing in the semicondcutor laser unit 530 of the 4th execution mode, have photodiode 27, so bluish violet color laser and red laser that acceptance is penetrated from the rear end face of first semiconductor Laser device 11 and second semiconductor Laser device 12 are the bluish violet color laser that can FEEDBACK CONTROL penetrates from first semiconductor Laser device 11 and second semiconductor Laser device 12 and the output of red laser.
The wave of oscillation length of the laser that wherein general photodiode is accepted, sensitivity reduces., shine expeditiously on the photodiode 27 of the central part that is located at module body 19 so can make from the bluish violet color laser of first semiconductor Laser device, 11 ejaculations because first semiconductor Laser device 11 is located at the central part of module body 19.
Because photodiode 27 luminous intensities increase, the monitor current of the photodiode 27 of flowing through increases like this.Its result controls so can correctly carry out the output of first semiconductor Laser device 11 because control signal and noise ratio improve.
(the 5th execution mode)
Semicondcutor laser unit and electro-optical device to the 5th execution mode describes below.
Figure 23 is the stereoscopic figure of the semicondcutor laser unit of expression the 5th execution mode.
Below the details in the module body 19 is described.Following handle penetrates laser direction from semiconductor Laser device and describes as the front.
Figure 24 is that the lid 25 that schematically shows the semicondcutor laser unit 540 of Figure 23 is removed the front view of state afterwards, and Figure 25 schematically shows the vertical view of the lid 25 of the semicondcutor laser unit 540 of Figure 23 being removed the back state.Below to as follows with the difference of the semicondcutor laser unit 500 of first execution mode.
As shown in figure 24, forming on the support substrate 17 of conductivity of one, form the welding layer 18 of conductivity with module body 19.The welding layer 18 of conductivity is made of AuSn (golden tin).On the welding layer 18 of conductivity, form auxiliary substrate 15.On auxiliary substrate 15, form metal level 16a, 16b, 16d.Because of between metal level 16a, 16b, being provided with gap 16c, be provided with gap 16e at 16b, 16d, thus by electric insulation.
On metal level 16a, form welding layer 13, on metal level 16b, form welding layer 14, on metal level 16d, form welding layer 30. Welding layer 13,14,30 AuSn by conductivity (golden tin) constitute.Bonding first semiconductor Laser device 11 on welding layer 13, bonding second semiconductor Laser device 12 on welding layer 14, bonding the 3rd semiconductor Laser device 29 on welding layer 30.
Wherein first semiconductor Laser device 11 is configured to compare with the 3rd semiconductor Laser device 29 with second semiconductor Laser device 12 centre of the taking-up window 25a (with reference to Fig. 1) that is positioned at lid 25.
As Figure 24 and shown in Figure 25, metal level 16a is electrically connected with power pin 21a by lead 22a.This power pin 21a utilizes dead ring 20a and module body 19 to carry out electric insulation.Metal level 16b is electrically connected with power pin 21c by lead 22c.This power pin 21c utilizes dead ring 20c and module body 19 to carry out electric insulation.Metal level 16b is electrically connected with the n lateral electrode 11c of first semiconductor Laser device 11 by lead 26 in addition.The n lateral electrode 12c of second semiconductor Laser device 12 is electrically connected with support substrate 17 by lead 23.
The n lateral electrode 29c of the 3rd semiconductor Laser device 29 is electrically connected with support substrate 17 by lead 31.Metal level 16d is electrically connected with power pin 21b by lead 22b.This power pin 21b utilizes dead ring 20b and module body 19 to carry out electric insulation.This outer conductor 22a～22c, 23,26,31 is made of Au (gold).
Wherein the structure of the structure of first semiconductor Laser device 11 of the 5th execution mode and second semiconductor Laser device 12 and Fig. 6 and first semiconductor Laser device 11 shown in Figure 7 and second semiconductor Laser device 12 is identical.The 3rd semiconductor Laser device 29 has the structure of the sequential cascade of pad electrode (below be called p side liner electrode) 29b, n type GaAs (gallium arsenic) the substrate 29a of p side and n lateral electrode 29c.The p side liner electrode 29b of the 3rd semiconductor Laser device 29 is electrically connected with metal level 16d.The 3rd semiconductor Laser device 29 of the 5th execution mode contains the AlGaAs based semiconductor layer of narrating later that n type GaAs substrate 29a goes up formation in addition, has the wavelength (oscillation wavelength) of about 790nm.
Figure 26 is the circuit diagram of the electric wiring of expression semicondcutor laser unit 540.
As shown in figure 26, the p side liner electrode 11b of first semiconductor Laser device 11 and n lateral electrode 11c and module body 19 are by electric insulation.The p side liner electrode 11b of first semiconductor Laser device 11 is connected with power pin 21a, and n lateral electrode 11c is connected on the power pin 21c by lead 26,22c.The p side liner electrode 12b of second semiconductor Laser device 12 is connected on the power pin 21c by lead 22c, and the n lateral electrode 12c of second semiconductor Laser device 12 is electrically connected with module body 19.
The p side liner electrode 29b of the 3rd semiconductor Laser device 29 is connected on the power pin 21b by lead 22b in addition, and the n lateral electrode 29c of the 3rd semiconductor Laser device 29 is electrically connected with module body 19.
Figure 27 is the circuit diagram of the electric wiring of the electro-optical device of the semicondcutor laser unit 540 of expression use Figure 26.
As shown in figure 27, electro-optical device has semicondcutor laser unit 540, drive circuit 501, DC power supply 502 and switch 507,508.
In the drive circuit 501 of Figure 27, the DC power supply (not expression among the figure) that produces direct voltage V is equipped with in inside.This direct voltage V is than the starting of oscillation voltage of second semiconductor Laser device 12 and the starting of oscillation voltage height of the 3rd semiconductor Laser device 29.Direct voltage-the Va of (opposite polarity) is born in DC power supply 502 outputs in addition.
The anode terminal 501a of drive circuit 501 is connected on the node e.Node e is connected on the terminal 507a of switch 507, is connected simultaneously on the power pin 21a of semicondcutor laser unit 540.
The cathode terminal 501b of drive circuit 501 is connected on the node f.When node f is connected on the terminal 508b of switch 508, be connected on the power pin 24 of semicondcutor laser unit 540.This external nodal point f ground connection (0V).
The power pin 21b of semicondcutor laser unit 540 is connected on the terminal 507c of switch 507.
The power pin 21c of semicondcutor laser unit 540 is connected on the node g.When node g is connected on the terminal 507b of switch 507, be connected negative electrode one side of DC power supply 502.Anode one side of DC power supply 502 is connected on the terminal 508a of switch 508.
For example by switch 507 is switched to terminal 507c, cut-off switch 508 can be applied to the 3rd semiconductor Laser device 29 to direct voltage V from the DC power supply that is contained in the drive circuit 501 simultaneously.Such the 3rd semiconductor Laser device 29 can penetrate infrared laser.
By switch 507 is switched to terminal 507b, cut-off switch 508 can be applied to second semiconductor Laser device 12 to direct voltage V from the DC power supply that is contained in the drive circuit 501 simultaneously on the other hand.Such second semiconductor Laser device 12 can penetrate red laser.
By switch 507 is switched to terminal 507b, switch 508 is opened switch 508a simultaneously, can be applied to the p side liner electrode 11b of first semiconductor Laser device 11 to direct voltage V from the DC power supply that is contained in the drive circuit 501, simultaneously the negative direct voltage-Va of DC power supply 502 is applied to the n lateral electrode 11c of first semiconductor Laser device 11.In first semiconductor Laser device 11, the direct voltage of drive circuit 501 is applied on first semiconductor Laser device 11 with the total voltage V+Va of the direct voltage of the DC power supply of bearing 502 like this.Such first semiconductor Laser device 11 can penetrate bluish violet color laser.
Structure to the 3rd semiconductor Laser device 29 describes below.The structure of the structure of first semiconductor Laser device 11 and second semiconductor Laser device 12 and Fig. 6 and first semiconductor Laser device 11 shown in Figure 7 and second semiconductor Laser device 12 is identical in addition.Following semiconductor Laser device the ejaculation infrared laser calls the infrared semiconductor laser element.
Figure 28 is the schematic sectional view that is used to illustrate the detailed structure of infrared semiconductor laser element 29.Also the same in Figure 28 with Fig. 6 and Fig. 7, defined directions X, Y direction, Z direction.
In the 5th execution mode, infrared semiconductor laser element 29 forms n type GaAs substrate 29a on n lateral electrode 29c, forms AlGaAs based semiconductor layer on n type GaAs substrate 29a.Si mixes among this n type GaAs substrate 29a.
Shown in Figure 28 (a), as AlGaAs based semiconductor layer, order forms n-GaAs layer 301, n-AlGaAs cover layer 302, not doped with Al GaAs light guide layer 303, MQW (multiple quantum trap) active layer 304, not doped with Al GaAs light guide layer 305, p-AlGaAs first cover layer 306, p-AlGaAs etch stop layer 307, p-AlGaAs second cover layer 308 and p-GaAs contact layer 309 on n type GaAs substrate 29a.The formation of these each layers for example can be carried out with mocvd method (Metalorganic chemical vapor deposition method).
Shown in Figure 28 (b), MQW active layer 304 has 2 not doped with Al GaAs barrier layer 304a and 3 doped with Al GaAs trap layer 304b stacked structures mutually not.
Wherein, for example the Al of n-AlGaAs cover layer 302 consists of 0.45, and Ga consists of 0.55.Si mixes in n-GaAs layer 301 and n-AlGaAs cover layer 302.
The Al of doped with Al GaAs light guide layer 303 does not consist of 0.35, and Ga consists of 0.65.The Al of doped with Al GaAs barrier layer 304a does not consist of 0.35, and Ga consists of 0.65.The Al of doped with Al GaAs trap layer 304b does not consist of 0.10, and Ga consists of 0.90.The Al of doped with Al GaAs light guide layer 305 does not consist of 0.35, and Ga consists of 0.65.
The Al of p-AlGaAs first cover layer 306 consists of 0.45 in addition, and Ga consists of 0.55.The Al of p-AlGaAs etch stop layer 307 consists of 0.70, and Ga consists of 0.30.
The Al of p-AlGaAs second cover layer 308 consists of 0.45, and Ga consists of 0.55.
Doping of Zn in p-AlGaAs first cover layer 306, p-AlGaAs etch stop layer 307, p-AlGaAs second cover layer 308 and p-GaAs contact layer 309.
In above-mentioned, be only on a part (middle body) p-AlGaAs etch stop layer 307, to carry out to forming p-AlGaAs second cover layer 308 on the p-AlGaAs etch stop layer 307.On p-AlGaAs second cover layer 308, form p-GaAs contact layer 309 then.
Like this, in above-mentioned AlGaAs based semiconductor layer, utilize p-AlGaAs second cover layer 308 and p-GaAs contact layer 309, form along the bump Ri of the tape shape of directions X extension.The bump Ri width that is made of p-AlGaAs second cover layer 308 and p-GaAs contact layer 309 has 2.8 μ m approximately.
On p-AlGaAs etch stop layer 307, the side of p-AlGaAs second cover layer 308 and p-GaAs contact layer 309 above and the side form the dielectric film 310 that constitutes by SiN, the dielectric film 310 usefulness etchings that form on p-GaAs contact layer 309 are removed.On the p-GaAs contact layer 309 that is exposed, form the p electrode 311 that constitutes by Cr/Au then.Form p side liner electrode 29b with sputtering method, vacuum vapour deposition or electron beam evaporation plating method again, cover above the p electrode 311.
On the one side of n-GaAs substrate 29a, form AlGaAs based semiconductor layer like this with stepped construction.
On this infrared semiconductor laser element 29, form the infraluminescence point on the position of the MQW active layer 304 below bump Ri.In this example, MQW active layer 304 is equivalent to the pn composition surface of Fig. 1.
Utilize above-mentioned method, in the semicondcutor laser unit 540 of the 5th execution mode, because when driving first semiconductor Laser device 11, on second semiconductor Laser device 12 and the 3rd semiconductor Laser device 29, apply reverse voltage, electric current does not flow, so can carry out the driving of first semiconductor Laser device 11 fully independently.
Even in addition first semiconductor Laser device 11, second semiconductor Laser device 12 and the 3rd semiconductor Laser device 29 are located under the situation on the same module body 19, also can increase the radical of existing power pin.Its result can penetrate bluish violet color laser, red laser, infrared laser from first semiconductor Laser device 11, second semiconductor Laser device 12 and the 3rd semiconductor Laser device 29, can keep the interchangeability with existing semicondcutor laser unit simultaneously.
(each several part of execution mode and claim respectively constitute the corresponding of main points)
In first～the 5th execution mode, n lateral electrode 11c, 12c, 29c are equivalent to an electrode or another electrode, and p side liner electrode 11b, 12b, 29b are equivalent to another electrode or an electrode. N lateral electrode 11c, 12c, 29c are equivalent to negative electrode, and p side liner electrode 11b, 12b, 29b are equivalent to anode.The n lateral electrode of photodiode 27 is equivalent to an electrode or another electrode, and p lateral electrode 27a is equivalent to another electrode or an electrode.The n lateral electrode of photodiode 27 is equivalent to negative electrode, and p lateral electrode 27a is equivalent to anode.
First semiconductor Laser device 11 is equivalent to first semiconductor Laser device in addition, bluish violet color laser is equivalent to the light of first wavelength, second semiconductor Laser device 12 is equivalent to second semiconductor Laser device, red laser is equivalent to the light of second wavelength, the 3rd semiconductor Laser device 13 is equivalent to the 3rd semiconductor Laser device, and infrared laser is equivalent to the light of three-wavelength.
(other execution mode)
In first～the 5th execution mode, there are first semiconductor Laser device 11, second semiconductor Laser device 12 and the 3rd semiconductor Laser device 29 of certain relation to be illustrated to starting of oscillation voltage and oscillation wavelength, but be not limited thereto, the present invention also goes for starting of oscillation voltage and oscillation wavelength does not have certain semiconductor Laser device that concerns.
In this execution mode of the external first～the 3rd and the 5th, the DC power supply that produces direct voltage V is equipped with in drive circuit 501 inside, but be not limited thereto, the power supply of the voltage of the power supply of the voltage that is created in the overlapping sine wave of direct voltage or overlapping pulses waveform also can be housed in inside.
In first～the 5th execution mode, first～the 3rd semiconductor Laser device 11,12,29 is configured to p side liner electrode respectively in support substrate one side, but is not limited thereto, and also can be configured to the n lateral electrode in support substrate one side.
In first～the 5th execution mode, first～the 3rd semiconductor Laser device 11,12,29 is on transverse direction and row arrangement, but be not limited thereto, also can be in first～the 3rd semiconductor Laser device 11,12,29 the other semiconductor Laser device of overlay configuration on any one semiconductor Laser device.In this case, for each electrode to overlapping a plurality of semiconductor Laser devices provides different voltage, also can between semiconductor Laser device, insert the layer that configuration is used for they are carried out electric insulation.
Specifically, in first～the 4th execution mode, for example can be on the first short semiconductor Laser device 11 of wavelength overlay configuration second semiconductor Laser device 12, insulating barrier is clipped in the middle.In this external the 5th execution mode, for example can be on the first short semiconductor Laser device 11 of wavelength in overlay configuration second semiconductor Laser device 12 and the 3rd semiconductor Laser device 29 any, insulating barrier is clipped in the middle, perhaps also can be on first semiconductor Laser device 11 with transverse direction both sides in mode overlay configuration second semiconductor Laser device 12 and the 3rd semiconductor Laser device 29 side by side, insulating barrier is clipped in the middle.
In the 5th execution mode, on the first short semiconductor Laser device 11 of wavelength with transverse direction side by side under both sides in mode overlay configuration second semiconductor Laser device 12 and the 3rd semiconductor Laser device 29, the situation that insulating barrier is clipped in the middle, the luminous point that can be configured to second semiconductor Laser device 12 is near directly over the luminous point of first semiconductor Laser device 11, and the luminous point that also can be configured to the 3rd semiconductor Laser device 29 is near directly over the luminous point of first semiconductor Laser device 11.In addition, the luminous point that also can be configured to second semiconductor Laser device 12 and the 3rd semiconductor Laser device 29 is positioned at both sides, and the luminous point of first semiconductor Laser device 11 is clipped in the middle.In addition, the luminous point that also can be configured to first semiconductor Laser device 11 and the 3rd semiconductor Laser device 29 is positioned at both sides, the luminous point of second semiconductor Laser device 12 is clipped in the middle, the luminous point that also can be configured to first semiconductor Laser device 11 and second semiconductor Laser device 12 in addition is positioned at both sides, and the luminous point of the 3rd semiconductor Laser device 29 is clipped in the middle.
In the 5th execution mode, second semiconductor Laser device 12 and the 3rd semiconductor Laser device 29 can integrated formation on same substrate.
The possibility of utilizing on the industry
The present invention can be used in the drive unit of the optical recording medium of the reply high speed of information processing and high capacity.
Claims (4)
1. an electro-optical device is characterized in that having
Semicondcutor laser unit,
First power supply and
Second source,
Described semicondcutor laser unit comprises
First semiconductor Laser device with light of an electrode and another electrode, ejaculation first wavelength;
Have an electrode and another electrode, penetrate second semiconductor Laser device than the light of long second wavelength of described first ripple; With
Accommodate the conductivity assembly of described first and second semiconductor Laser devices,
Electrode of described first semiconductor Laser device and another electrode and described component insulation,
With described second semiconductor Laser device of described first power drives,
Give another electrode of described first semiconductor Laser device polarity current potential with described first power supply, simultaneously,
Give an electrode of described first semiconductor Laser device with the described second source handle and the current potential of a described polarity opposite polarity.
2. electro-optical device as claimed in claim 1 is characterized in that,
Described first semiconductor Laser device has the first starting of oscillation voltage,
Described second semiconductor Laser device has the second starting of oscillation voltage lower than the described first starting of oscillation voltage.
3. electro-optical device as claimed in claim 1 is characterized in that,
Described first semiconductor Laser device is made of the material that contains nitride-based semiconductor.
4. an electro-optical device is characterized in that having
Semicondcutor laser unit,
First power supply and
Second source,
Described semicondcutor laser unit comprises
Have an electrode and another electrode and have the first starting of oscillation voltage first semiconductor Laser device,
Have an electrode and another electrode and have the second starting of oscillation voltage lower than the described first starting of oscillation voltage second semiconductor Laser device and
Accommodate the conductivity assembly of described first and second semiconductor Laser devices,
Electrode of described first semiconductor Laser device and another electrode and described component insulation,
With described second semiconductor Laser device of described first power drives,
Give another electrode of described first semiconductor Laser device polarity current potential with described first power supply, simultaneously
Give an electrode of described first semiconductor Laser device with the described second source handle and the current potential of a described polarity opposite polarity.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004-101489 | 2004-03-30 | ||
| JP2004101489 | 2004-03-30 | ||
| JP2004101489 | 2004-03-30 | ||
| JP2005-033099 | 2005-02-09 | ||
| JP2005033099A JP4568133B2 (en) | 2004-03-30 | 2005-02-09 | Semiconductor laser device and optical device |
| JP2005033099 | 2005-02-09 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2005100539446A Division CN100454700C (en) | 2004-03-30 | 2005-03-11 | Semiconductor laser apparatus and optical apparatus |
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| CN101414732A CN101414732A (en) | 2009-04-22 |
| CN101414732B true CN101414732B (en) | 2010-09-22 |
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| CN 200810179134 Expired - Fee Related CN101414732B (en) | 2004-03-30 | 2005-03-11 | Semiconductor laser apparatus and optical apparatus |
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| CN (1) | CN101414732B (en) |
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| JP7318615B2 (en) * | 2020-09-11 | 2023-08-01 | トヨタ自動車株式会社 | power converter |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1316810A (en) * | 2000-02-15 | 2001-10-10 | 索尼株式会社 | Luminescent device and optical device using the luminescent device |
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| JP2000151006A (en) * | 1998-11-09 | 2000-05-30 | Sharp Corp | Semiconductor laser device |
| JP4074419B2 (en) * | 2000-03-14 | 2008-04-09 | シャープ株式会社 | Wire bonding method for semiconductor laser device |
| JP2004146722A (en) * | 2002-10-28 | 2004-05-20 | Ricoh Co Ltd | Semiconductor laser apparatus and manufacturing method thereof |
| JP2004319915A (en) * | 2003-04-18 | 2004-11-11 | Sharp Corp | Semiconductor laser device and method for manufacturing the semiconductor laser device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1316810A (en) * | 2000-02-15 | 2001-10-10 | 索尼株式会社 | Luminescent device and optical device using the luminescent device |
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| JP5194049B2 (en) | 2013-05-08 |
| CN101414732A (en) | 2009-04-22 |
| JP2010166096A (en) | 2010-07-29 |
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